CN101038850A - Ion implantation high temperature target - Google Patents
Ion implantation high temperature target Download PDFInfo
- Publication number
- CN101038850A CN101038850A CNA2006100313707A CN200610031370A CN101038850A CN 101038850 A CN101038850 A CN 101038850A CN A2006100313707 A CNA2006100313707 A CN A2006100313707A CN 200610031370 A CN200610031370 A CN 200610031370A CN 101038850 A CN101038850 A CN 101038850A
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- movable plate
- wafer
- lattice framing
- support bar
- high temperature
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Abstract
The invention provides an ion implantation high temperature target which includes a target pedestal with cooling groove, and wafer clamping mechanism disposed at the periphery of the target pedestal and connected to the same by a support bar, a two-point clip fixed to the outer end of the support bar by a connection angle-block, a concave groove arranged on the support bar and in which a movable plate is disposed, the concave surface of the support bar, which has a silicon liner plate, provided with a cover plate, a single-point clip fixed to the front part of the movable plate, the two ends of the clamping spring at the inner end of the support bar respectively connected to support bar and the movable plate and moving the movable plate toward the center of the wafer by the force of the clamping spring; the movable plate is provided with limit nail, and the support bar is provided with a wafer support pillar having an inclined top face and disposed at the outer end of the movable plate, and a wafer support rod which can move up and down; the two-point clip and the single-point clip are made of high purity silica, and the support bar, the movable plate, the cover plate, the each connection angle block, the bolt are made of molybdenum material. The invention enables the high temperature ion implantation machine to continuously and normally implant the semiconductor wafer in high temperature condition of 400 to 800 DEG C..
Description
Technical field
The present invention relates to the semi-conducting material production equipment, specifically be meant the ion implantation high temperature target that is used for ion implantor.
Background technology
Make the field at semiconducter IC; the development of very lagre scale integrated circuit (VLSIC); to the integrated level and the speed of service of further raising chip and reduce the characteristic size of integrated circuit and aspect such as radiation hardening energy has proposed new stern challenge; the SOI technology is the key technology that solves very lagre scale integrated circuit (VLSIC) power consumption crisis and improve radiation resistance; it will progressively replace the mainstream technology that body silicon becomes deep submicron integrated circuit; it also is the one preferred technique of the following technology of 0.13 μ m; the SOI material also is the indispensable material of space flight and aviation and other weaponry field cut-throat competitions, is the leading material of following very lagre scale integrated circuit (VLSIC).
The existing SOI of making material adopts SIMOX technology to be, silicon chip is preheating to about 500 ℃, and the oxonium ion of the heavy dose of particular energy is injected on the silicon chip, through about 1300 ℃ high annealing, at the certain thickness SiO of the inner formation of silicon chip
2Insulating barrier, top layer silicon is used to make the SOI device.Silicon chip injects oxonium ion needs the high temperature target chamber in ion implantor to carry out, and high temperature injects the critical component that target chamber is the special-purpose high current oxonium ion of a SIMOX technology implanter.But existing ion implantation high temperature target can not satisfy actual needs.
Summary of the invention
The technical problem to be solved in the present invention is that the deficiency at prior art exists proposes a kind of ion implantation high temperature target, makes the high temperature ion implantor can carry out continuously the normal sheet of annotating under 400 ℃-800 ℃ hot environment.
Technical solution of the present invention is, described ion implantation high temperature target comprises the rotatable target disc seat that has the annular cooling water groove, the mounting board mechanism that several that are evenly distributed on described target disc seat periphery hold wafer through accordingly radially lattice framing be connected with this target disc seat and locate by alignment pin, the composition of described mounting board mechanism is, 2 clamps connect the outer end that hornblock is fixed on described lattice framing through it, this lattice framing has a groove along its length and wherein is equipped with slidably movable plate, the groove surface that the described lattice framing of silicon liner plate is equipped with on the surface is equipped with cover plate, single-point clamp connects hornblock through it and is fixed on the anterior of movable plate and is positioned at the offside of described 2 clamps and forms the bikini mounting board thus on a circumference, and the two ends that are positioned at the fastening spring at the inner position of described lattice framing are connected with movable plate with this lattice framing respectively and described movable plate is moved towards center wafer through the corresponding hornblock that connects; Banking pin and spacing by corresponding spacing hole on the lattice framing is housed on the movable plate, also is equipped with on the lattice framing and is positioned at the movable plate outer end and the top is the wafer fore-set on inclined-plane and the wafer push rod of three distributions triangular in shape that can upper and lower motion; Described 2 clamps and single-point clamp HIGH-PURITY SILICON material, lattice framing, movable plate, cover plate and describedly respectively connect hornblock, screw is made of Mo.
Below the present invention made further specify.
Referring to Fig. 1 to Fig. 3, apparatus of the present invention comprise the rotatable target disc seat 1 that has annular cooling water groove 2, the mounting board mechanism that several that are evenly distributed on described target disc seat 1 periphery hold wafer 5 through accordingly radially lattice framing 6 be connected with this target disc seat 1 and by alignment pin 12 location, the composition of described mounting board mechanism is, 2 clamps 3 connect the outer end that hornblock 16 is fixed on described lattice framing 6 through it, have a groove on this lattice framing 6 along its length and wherein be equipped with slidably movable plate 7, the groove surface that the described lattice framing 6 of silicon liner plate 13 is equipped with on the surface is equipped with cover plate 8, single-point clamp 4 connects hornblock 17 through it and is fixed on the anterior of movable plate and is positioned at the offside of described 2 clamps 3 and forms the bikini mounting board thus on a circumference, be positioned at described lattice framing 6 inner positions fastening spring 10 two ends through corresponding connect that hornblock is connected with movable plate 7 with this lattice framing 6 respectively and as described in (when being compressed) makes under the power effect of this fastening spring 10 movable plate 7 move towards wafer 5 centers; Banking pin 9 is housed and by corresponding spacing hole spacing (referring to Fig. 3) on the lattice framing 6 on the movable plate 7, also is equipped with on the lattice framing 6 and is positioned at movable plate 7 outer ends and the top is the wafer fore-set 11 on inclined-plane and the wafer push rod 19 of three distributions triangular in shape that can upper and lower motion; Described 2 clamps 3 and single-point clamp 4 usefulness HIGH-PURITY SILICON (silicon content 〉=98%) are made, lattice framing 6, movable plate 7, cover plate 8 and describedly respectively connect hornblock, screw is made of Mo.
The know-why of the present invention and the course of work be, the target disc seat 1 aluminium of handy good heat conductivity is made, and inner water flowing cooling is in low-temperature space; The wafer clamp mechanism for card of high-temperature region links to each other with target disc seat 1 by the lattice framing 6 in temperature transition district, and driven by motor target disc seat 1 is rotated, and whole target disc can be adorned some wafers (as 18), and target pawl group is clamped wafer and done uniform rotation; For fixed wafer 5, this high temperature target has adopted 2 clamps 3 and a single-point clamp 4 on every group of silicon clamp, it is bikini mounting board mode, wherein 2 clamps are fixed on the lattice framing 6 by connecting hornblock 16, the single-point clamp then is fixed on the movable plate 7 by connecting hornblock 17, lattice framing 6 has a groove, and cover plate 8 and lattice framing 6 can pass through screw attachment, and movable plate 7 can be free to slide in the groove of lattice framing 6.Fastening spring 10 connects hornblock 18 1 ends by two and connects with lattice framing 6, the other end connects with movable plate 7, because the active force of spring makes movable plate 7 move towards center wafer, so the single-point clamp that is fixed on the movable plate 7 can compress wafer, 2 clamps on cooperation opposite also just constitute the wafer fixed form of 3 cassettes.
Wafer is a fragile article, clamping force at wafer 3 clamps fixedly the time must be moderate, therefore the elastic force of spring 10 should be adjusted to appropriateness, banking pin 9 has been installed on the movable plate 7, be used for limiting the moving range of single-point silicon card 4, fastening spring 10 makes single-point clamp 4 compress wafer with 2 clamps 3, thereby makes wafer keep clamped condition to make thrust maintain set point when rotation is injected, and wafer is fixed reliable and is difficult for fragment.The centrifugal force direction that produces when this wafer clamping force with whole target disc high speed rotating is is consistent, is not have to get rid of the sheet phenomenon when annotating the sheet rotation, and the clamping force of spring requires can not be too big, otherwise can weigh wounded wafer.
The entire target claw relies on lattice framing 6 to be connected on the target disc seat 1, by alignment pin 12 location.Other parts are all attached on the lattice framing 6 that locates.Reduce the pollution of metallic in order in 400 ℃-800 ℃ hot environment, to use, 2 clamps 3 and single-point clamp 4 usefulness HIGH-PURITY SILICON Si processing, other all are to adopt high-temperature material MO processing as lattice framing 6, movable plate 7, cover plate 8 and various connection hornblock and screw.And fastening spring 10 is in the low-temperature end near target disc seat 1, can adopt common material processing.For reducing the pollution of annotating metal M o in the sheet, a silicon liner plate 13 is installed on lattice framing 6, prevent that ion beam bombardment metal M o from producing sputter and polluting.
For realizing the automatic loading and unloading of wafer, this high temperature target has designed the wafer fore-set 11 and the wafer push rod 19 of loose card wafer, and the top flat end of wafer fore-set 11 has the inclined-plane of certain angle; When mobile, promote movable plate 7 along the inclined-plane on the wafer fore-set 11; When moving on to movable plate 7 square openings inboard on the top flat top of wafer fore-set 11, promotion is by the movable plate 7 of fastening spring 10 tensions, being connected in single-point clamp on the movable plate 7 follows and unclamps the wafer that compresses, after wafer unclamps, three wafer push rods 19 move up and down, hold wafer and realize the automatic loading and unloading of wafer, this is the portable automatic loading and unloading sheet of an end that relates to of this high temperature target just.
As known from the above, the present invention is a kind of ion implantation high temperature target, and it can make the high temperature ion implantor under 400 ℃-800 ℃ hot environment semiconductor wafer be carried out continuously normal notes sheet, thereby has effectively overcome the deficiency of prior art.
As mentioned above, though open and described the present invention's preferential embodiment at present, be interpreted as these disclosed contents and just be used for illustrative purposes, can carry out variations and modifications and do not leave the scope of the invention that claims propose.
Description of drawings
Fig. 1 is the plan structure schematic diagram of the whole target disc of an embodiment of the present invention;
Fig. 2 is the local vertically sectional structure enlarged diagram of a target claw among Fig. 1;
Fig. 3 is the wafer clamping part plan structure schematic diagram of target claw shown in Figure 2;
Fig. 4 is a kind of embodiment plan structure schematic diagram of 2 clamps;
Fig. 5 be among Fig. 4 A-A to view;
Fig. 6 is the right view of member shown in Figure 4;
Fig. 7 is that a kind of embodiment of single-point clamp faces structural representation;
Fig. 8 be member shown in Figure 7 overlook knot figure;
Fig. 9 is that a kind of embodiment of wafer fore-set faces structural representation;
Figure 10 is the left view of member shown in Figure 9.
In the drawings:
1-target disc seat, 2-annular cooling water groove, 2 clamps of 3-,
4-single-point clamp, the 5-wafer, the 6-lattice framing,
The 7-movable plate, the 8-cover plate, the 9-banking pin,
The 10-fastening spring, 11-wafer fore-set, the 12-alignment pin,
13-silicon liner plate, the 15-screw, 16,17,18-connects hornblock,
19-wafer push rod, the 20-sealing ring.
Embodiment
Referring to accompanying drawing, the aluminium of target disc seat 1 usefulness good heat conductivity is made, and its cooling water channel is an annular tank 2, the also water jacket that can form with two sealing rings 20, and inner water flowing cooling is in low-temperature space; The wafer clamp mechanism for card of high-temperature region links to each other with target disc seat 1 by the lattice framing 6 in temperature transition district, driven by motor target disc seat 1 is rotated, whole target disc is designed to adorn 18 of wafers, target pawl group is clamped wafer and is done uniform rotation (for guaranteeing the high temperature requirement of wafer when injecting, make full use of thermal source, improve the heat efficiency, the design of part size in this zone should be as far as possible little, with the quality of minimum and minimum heat-conducting area design; Even for guaranteeing wafer wafer surface temperature when high temperature injects, target pawl group and wafer are with minimum contact-making surface holding chip, and be as far as possible little with the contacted area of wafer); 2 clamps are fixed on the lattice framing 6 by connecting hornblock 16, and the single-point clamp then is fixed on the movable plate 7 by connecting hornblock 17, and lattice framing 6 has a groove, and cover plate 8 and lattice framing 6 can pass through screw attachment, and movable plate 7 can be free to slide in the groove of lattice framing 6.Fastening spring 10 connects hornblock 18 1 ends by two and connects with lattice framing 6, and the other end connects with movable plate 7, and the effect of spring makes movable plate 7 move towards center wafer; The banking pin 9 that is used for limiting single-point silicon card 4 movings range is installed on the movable plate 7, fastening spring 10 stretches to move and drives single-point clamp 4 and compress wafer with 2 clamps 3, make wafer keep clamped condition to make thrust maintain set point when rotation is injected, wafer is fixed reliable and is difficult for fragment.The centrifugal force direction that produces when this wafer clamping force with whole target disc high speed rotating is is consistent, does not have to get rid of the sheet phenomenon when annotating the sheet rotation; The entire target claw relies on lattice framing 6 to be connected on the target disc seat 1, and by alignment pin 12 location, other parts are all attached on the lattice framing 6 that locates.Reduce the pollution of metallic in order in 400 ℃-800 ℃ hot environment, to use, 2 clamps 3 and single-point clamp 4 usefulness HIGH-PURITY SILICON Si processing, other all are to adopt high-temperature material MO processing as lattice framing 6, movable plate 7, cover plate 8 and various connection hornblock and screw.And fastening spring 10 is in the low-temperature end near target disc seat 1, can adopt common material processing.For reducing the pollution of annotating metal M o in the sheet, a silicon liner plate 13 is installed on lattice framing 6, prevent that ion beam bombardment metal M o from producing sputter and polluting.
Claims (1)
1, a kind of ion implantation high temperature target, comprise the rotatable target disc seat (1) that has annular cooling water groove (2), the mounting board mechanism that several that are evenly distributed on described target disc seat (1) periphery hold wafer (5) through accordingly radially lattice framing (6) be connected with this target disc seat (1) and locate by alignment pin (12), the composition of described mounting board mechanism is, one 2 clamps (3) connect the outer end that hornblock (16) is fixed on described lattice framing (6) through it, have a groove on this lattice framing (6) along its length and wherein be equipped with slidably movable plate (7), the groove surface that the described lattice framing (6) of silicon liner plate (13) is equipped with on the surface is equipped with cover plate (8), a single-point clamp (4) connects hornblock (17) through it and is fixed on the anterior of movable plate and is positioned at the offside of described 2 clamps (3) and forms the bikini mounting board thus on a circumference, and the two ends that are positioned at the fastening spring (10) at the inner position of described lattice framing (6) are connected with movable plate (7) with this lattice framing (6) respectively and described movable plate (7) is moved towards wafer (5) center through the corresponding hornblock that connects; Banking pin (9) is housed and goes up corresponding spacing hole spacing on the movable plate (7), also be equipped with on the lattice framing (6) and be positioned at movable plate (7) outer end and the top is the wafer fore-set (11) on inclined-plane and the wafer push rod (19) of three distributions triangular in shape that can upper and lower motion by lattice framing (6); Described 2 clamps (3) and single-point clamp (4) are used the HIGH-PURITY SILICON material, lattice framing (6), movable plate (7), cover plate (8) and describedly respectively connect hornblock, screw is made of Mo.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100313707A CN100501907C (en) | 2006-03-17 | 2006-03-17 | Ion implantation high temperature target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100313707A CN100501907C (en) | 2006-03-17 | 2006-03-17 | Ion implantation high temperature target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101038850A true CN101038850A (en) | 2007-09-19 |
| CN100501907C CN100501907C (en) | 2009-06-17 |
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ID=38889657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100313707A Expired - Fee Related CN100501907C (en) | 2006-03-17 | 2006-03-17 | Ion implantation high temperature target |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100501907C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762145A (en) * | 2013-12-23 | 2014-04-30 | 中国电子科技集团公司第四十八研究所 | High-temperature target chamber system with rotary disk |
| CN107039225A (en) * | 2017-04-25 | 2017-08-11 | 上海新傲科技股份有限公司 | Hot type ion implantation apparatus safety mutually-locking device |
-
2006
- 2006-03-17 CN CNB2006100313707A patent/CN100501907C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762145A (en) * | 2013-12-23 | 2014-04-30 | 中国电子科技集团公司第四十八研究所 | High-temperature target chamber system with rotary disk |
| CN103762145B (en) * | 2013-12-23 | 2016-03-09 | 中国电子科技集团公司第四十八研究所 | High-temperature target chamber system with rotary disk |
| CN107039225A (en) * | 2017-04-25 | 2017-08-11 | 上海新傲科技股份有限公司 | Hot type ion implantation apparatus safety mutually-locking device |
| CN107039225B (en) * | 2017-04-25 | 2018-07-24 | 上海新傲科技股份有限公司 | Hot type ion implantation apparatus safety mutually-locking device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100501907C (en) | 2009-06-17 |
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Granted publication date: 20090617 Termination date: 20190317 |
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