CN107039225B - Hot type ion implantation apparatus safety mutually-locking device - Google Patents
Hot type ion implantation apparatus safety mutually-locking device Download PDFInfo
- Publication number
- CN107039225B CN107039225B CN201710276773.6A CN201710276773A CN107039225B CN 107039225 B CN107039225 B CN 107039225B CN 201710276773 A CN201710276773 A CN 201710276773A CN 107039225 B CN107039225 B CN 107039225B
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- CN
- China
- Prior art keywords
- current
- heating lamp
- ion implantation
- implantation apparatus
- type ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000005468 ion implantation Methods 0.000 title claims abstract description 28
- 238000010438 heat treatment Methods 0.000 claims abstract description 41
- 239000003990 capacitor Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 238000004891 communication Methods 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Apparatus For Disinfection Or Sterilisation (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of hot type ion implantation apparatus safety mutually-locking devices comprising current transformer, controller and heating lamp;The controller is connect with heating lamp, the on off state for controlling heating lamp;The primary side of current transformer is coupled with target disc motor current supply circuit, and for obtaining the electric current on target disc motor current supply circuit, secondary side is connect with controller;When the current signal of current transformer primary side is less than a threshold current, the controller controls the heating lamp and is closed.Hot type ion implantation apparatus safety mutually-locking device provided by the invention; the size of electric current in current supply circuit based on target disc motor; to control whether heating lamp is powered; the hardware damage problem caused by target disc communication failure is effectively prevented, is all played a very good protection to the silicon chip of ion implantation apparatus itself and its processing.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of hot type ion implantation apparatus safety mutually-locking devices.
Background technology
Hot type ion implantation apparatus has sporadic target disc communication failure during normal process.The target disc communication
Failure is embodied in:Target disc has actually stopped operating, but target disc still shows normal rotation in control system, heating
Lamp works normally, and line continues to inject silicon chip.After the target disc communication failure occurs, the silicon chip meeting on target disc that stops operating
Melt after continuing bombardment by ion beam (50mA@200kev), then ion beam can bombard silicon chip fixator, cause its damage.
Meanwhile it can be deformed upon because of the continuous heating of heating lamp in the silicon chip in heating lamp region.In the prior art, in order to solve
This failure, the process cavity that can only open the ion implantation apparatus are handled, and shutdown and the hardware of long period can be caused
Damage.Therefore, how to prevent target disc communication failure, prevent the hardware damage of the ion implantation apparatus, be urgently to solve at present
Certainly the technical issues of.
Invention content
The present invention provides a kind of hot type ion implantation apparatus safety mutually-locking device, to prevent the hair of target disc communication failure
It is raw, protect the hardware security of ion implantation apparatus.
To solve the above-mentioned problems, the present invention provides a kind of hot type ion implantation apparatus safety mutually-locking devices, including electricity
Current transformer, controller and heating lamp;The controller is connect with the heating lamp, the switch shape for controlling the heating lamp
State;The primary side of the current transformer is coupled with target disc motor current supply circuit, for obtaining on target disc motor current supply circuit
Electric current, the secondary side of the current transformer are connect with the controller;The current signal of the current transformer primary side is low
In the case of a threshold current, the controller controls the heating lamp and is closed.
Preferably, the controller is a switch module;The switch module be connected on heating lamp and heating lamp power supply it
Between.
Preferably, the switch module is connected serially on the line packet circuit of the electrical power contact device of the heating lamp power supply.
Preferably, the switch module is a capacitor, and the both ends of the capacitor are separately connected the current transformer
Two output ends of secondary side.
Preferably, the threshold current is less than the operating current of target disc motor.
Preferably, the threshold current is 4A.
Hot type ion implantation apparatus safety mutually-locking device provided by the invention, electric current in the current supply circuit based on target disc motor
Size the hardware damage problem caused by target disc communication failure is effectively prevented, to ion to control whether heating lamp is powered
Implanter itself and the silicon chip of its processing all play a very good protection.
Description of the drawings
Attached drawing 1 is the structural schematic diagram of the hot type ion implantation apparatus safety mutually-locking device of the specific embodiment of the invention;
Attached drawing 2 is the circuit structure diagram of the hot type ion implantation apparatus safety mutually-locking device of the specific embodiment of the invention.
Specific implementation mode
Below in conjunction with the accompanying drawings to the specific implementation mode of hot type ion implantation apparatus safety mutually-locking device provided by the invention
It elaborates.
Present embodiment provides hot type ion implantation apparatus safety mutually-locking device, and attached drawing 1 is of the invention specific real
The structural schematic diagram of the hot type ion implantation apparatus safety mutually-locking device of mode is applied, attached drawing 2 is the specific embodiment of the invention
The circuit structure diagram of hot type ion implantation apparatus safety mutually-locking device.
As shown in Figs. 1-2, the hot type ion implantation apparatus safety mutually-locking device that present embodiment provides, including electric current
Mutual inductor 11, controller 12 and heating lamp 15;The controller 12 is connect with the heating lamp 15, for controlling the heating lamp
15 on off state;The primary side of the current transformer 11 is coupled with target disc motor current supply circuit 13, for obtaining the target
Electric current on disk motor current supply circuit 13, the secondary side of the current transformer 11 are connect with the controller 12;The electric current
In the case that the current signal of 11 primary side of mutual inductor is less than a threshold current, the controller 12 controls at the heating lamp 15
In closed state.When the target disc of the hot type ion implantation apparatus is because of unexpected stop operating, the one of the current transformer 11
The electric current that secondary side senses the current supply circuit of target disc motor is less than a threshold current electric current, converted rear secondary side output current letter
Number to the controller 12, the controller 12 controls the heating lamp 15 and is closed, and the heating lamp 15 stops work
Make, to be damaged to silicon chip.Simultaneously as the signal that the heating lamp 15 works is the necessary item that ion beam draws beam
One of part, after the heating lamp 15 is stopped, ion beam can also interrupt accordingly, to the hot type ion implanting
The hardware of machine, which forms, to be effectively protected.
In order to simplify circuit structure, it is preferred that the controller 12 is a switch module;The switch module, which is connected on, to be added
Between thermolamp 15 and heating lamp power supply 14.When the current signal that the primary side of the current transformer 11 obtains is higher than the threshold value
When electric current, after the conversion of the current transformer 11, from the secondary side output HIGH current signal of the current transformer 11 to institute
When stating switch module, the switch module conducting so that the heating lamp power supply 14 can be that the heating lamp 15 is powered, described
Heating lamp is in normal operating conditions;When the current signal that the primary side of the current transformer 11 obtains is less than threshold value electricity
When stream, after the conversion of the current transformer 11, low current signal is exported to described from the secondary side of the current transformer 11
When switch module, the switch module disconnects so that the heating lamp power supply 14 cannot be that the heating lamp 15 is powered, described to add
Thermolamp 15 is closed, and protects the safety of silicon chip and hardware device.
In order to the power supply for cutting off the heating lamp 15 much sooner, it is preferred that the switch module is connected serially to institute
It states on the line packet circuit of the electrical power contact device 22 of heating lamp power supply 14.It is furthermore preferred that the switch module is a capacitor 21, institute
The both ends for stating capacitor 21 are separately connected two output ends of 11 secondary side of the current transformer.
Preferably, the threshold current is less than the operating current of target disc motor.It is furthermore preferred that the threshold current is 4A.
This is because electric current when target disc motor normal rotation is 5.3A or so, the electric current in the target disc motor current supply circuit 13
When less than 4A, it may be considered that the target disc motor stops operating, at this point, the electricity that the primary side of the current transformer 11 obtains
It flows signal and is less than the threshold current, after the conversion of the current transformer 11, the controller 12 is from the current transformer
11 secondary side obtains low current signal, then the controller 12 controls the heating lamp 15 and is closed.
Hot type ion implantation apparatus safety mutually-locking device provided by the invention, electric current in the current supply circuit based on target disc motor
Size the hardware damage problem caused by target disc communication failure is effectively prevented, to ion to control whether heating lamp is powered
Implanter itself and the silicon chip of its processing all play a very good protection.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (6)
1. a kind of hot type ion implantation apparatus safety mutually-locking device, which is characterized in that including current transformer, controller and heating
Lamp;
The controller is connect with the heating lamp, the on off state for controlling the heating lamp;
The primary side of the current transformer is coupled with target disc motor current supply circuit, for obtaining on target disc motor current supply circuit
Electric current, the secondary side of the current transformer are connect with the controller;
In the case that the current signal of the current transformer primary side is less than a threshold current, the controller control is described to be added
Thermolamp is closed.
2. hot type ion implantation apparatus safety mutually-locking device according to claim 1, which is characterized in that the controller is
One switch module;The switch module is connected between heating lamp and heating lamp power supply.
3. hot type ion implantation apparatus safety mutually-locking device according to claim 2, which is characterized in that the switch module
It is connected serially on the line packet circuit of the electrical power contact device of the heating lamp power supply.
4. hot type ion implantation apparatus safety mutually-locking device according to claim 2, which is characterized in that the switch module
For a capacitor, the both ends of the capacitor are separately connected two output ends of the Current Transformer Secondary side.
5. hot type ion implantation apparatus safety mutually-locking device according to claim 1, which is characterized in that the threshold current
Less than the operating current of target disc motor.
6. hot type ion implantation apparatus safety mutually-locking device according to claim 5, which is characterized in that the threshold current
For 4A.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710276773.6A CN107039225B (en) | 2017-04-25 | 2017-04-25 | Hot type ion implantation apparatus safety mutually-locking device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710276773.6A CN107039225B (en) | 2017-04-25 | 2017-04-25 | Hot type ion implantation apparatus safety mutually-locking device |
Publications (2)
Publication Number | Publication Date |
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CN107039225A CN107039225A (en) | 2017-08-11 |
CN107039225B true CN107039225B (en) | 2018-07-24 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5760409A (en) * | 1996-06-14 | 1998-06-02 | Eaton Corporation | Dose control for use in an ion implanter |
CN101038850A (en) * | 2006-03-17 | 2007-09-19 | 中国电子科技集团公司第四十八研究所 | Ion implantation high temperature target |
CN103762145A (en) * | 2013-12-23 | 2014-04-30 | 中国电子科技集团公司第四十八研究所 | High-temperature target chamber system with rotary disk |
CN204810183U (en) * | 2015-08-21 | 2015-11-25 | 武汉新芯集成电路制造有限公司 | A control circuit for implanter |
CN105895485A (en) * | 2014-12-18 | 2016-08-24 | 北京中科信电子装备有限公司 | Method enabling target stage of ion implantation machine to identify whether wafer exists |
-
2017
- 2017-04-25 CN CN201710276773.6A patent/CN107039225B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5760409A (en) * | 1996-06-14 | 1998-06-02 | Eaton Corporation | Dose control for use in an ion implanter |
CN101038850A (en) * | 2006-03-17 | 2007-09-19 | 中国电子科技集团公司第四十八研究所 | Ion implantation high temperature target |
CN103762145A (en) * | 2013-12-23 | 2014-04-30 | 中国电子科技集团公司第四十八研究所 | High-temperature target chamber system with rotary disk |
CN105895485A (en) * | 2014-12-18 | 2016-08-24 | 北京中科信电子装备有限公司 | Method enabling target stage of ion implantation machine to identify whether wafer exists |
CN204810183U (en) * | 2015-08-21 | 2015-11-25 | 武汉新芯集成电路制造有限公司 | A control circuit for implanter |
Also Published As
Publication number | Publication date |
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CN107039225A (en) | 2017-08-11 |
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