CN101024484A - Method for realizing surface plasma structure formation - Google Patents
Method for realizing surface plasma structure formation Download PDFInfo
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- CN101024484A CN101024484A CN 200710064690 CN200710064690A CN101024484A CN 101024484 A CN101024484 A CN 101024484A CN 200710064690 CN200710064690 CN 200710064690 CN 200710064690 A CN200710064690 A CN 200710064690A CN 101024484 A CN101024484 A CN 101024484A
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Abstract
The invention discloses a method to form surface plasma structure that includes the following steps: using wet method corrosion to decrease the typical line width of microstructure under mask, and forming a shadow region, taking metal coating on the surface of the structure after corroded and removing the microstructure that the line width and period are both decreased; transferring the microstructure to another film surface; repeating the above steps to gain the nanometer grade structure. The invention supplies a method to actually use nanometer structure.
Description
Technical field
The present invention relates to a kind of plasma photoetching template forming method, specifically a kind of method of utilizing technologies such as wet etching, moulding replication to make surface plasma micro-nano structure.
Background technology
In recent years, along with developing rapidly of micro-nano process technology and nano material, the electromagnetic property of micro-nano metal structure is just receiving increasing concern.The interaction of light and surperficial micro-nano metal structure has produced a series of new unusual physical phenomenons.For example, French scientist Ebbesen in 1998 and partner thereof find the unusual enhancing phenomenon (1) (Extraordinary Optical Transmission) by the light of sub-wavelength metallic hole array.People's such as H.J.Lezec research further shows (2): when light transmission sub-wavelength metal nano-pore, its transmitance not only can be enhanced, and the angle of diffraction of light beam is very little, and the diffraction law in the common dielectric medium structure is not followed in transmission direction.In addition, relevant new phenomenon with the surface plasma metal micro-nanostructure also has: after the metal micro structure effect of light and special distribution, occur along the characteristic of left hand rule propagation, illustrative material has negative index; Light is by behind the special metal nano-pore structure, and the light wave outgoing has fabulous directionality or the like.The research of micro-nano metal structure surface plasma wave has formed a new field.Novel surface plasma technique based on the micro-nano metal structure can be widely used in a plurality of fields such as military affairs, medical treatment, national security.
The shaping of micro-nano metal structure is the basis of surface plasma experimental study and application.The shaping of realization micro-nano metal structure is for the surface plasma experimental study and use significant.Because it is sub-micron even nanoscale that surface plasma micro-nano metal structure requires live width, therefore adopt conventional microlithography technology can't realize.At present, surface plasma micro-nano metal structure mainly adopts straight write device such as electron beam, ion beam to process, but this method processing method not only needs expensive process equipment, and the micro-nano structure area of making is difficult to break through 200 microns.Next adopts self-assembling technique also can make nano level structure, and structural area also can do greatly, but self-assembling technique can only be made lattice array, is difficult to make the micro-nano structure of linear array, ring array and other non-array.This gives and to need that large tracts of land, fine rule are wide, the experimental study and the Preliminary Applications of the surface plasma of arbitrary structures have been brought very big problem.
Summary of the invention
The technical problem to be solved in the present invention is to overcome the deficiencies in the prior art, and a kind of method that realizes the surface plasma structure formation of large tracts of land, any lines is provided.
The technical solution adopted for the present invention to solve the technical problems may further comprise the steps:
Realize the method for surface plasma structure formation, may further comprise the steps:
1) in the hot vapor deposition mask membrane layer of substrate surface, at described mask membrane layer surface coating photoresist;
2) by the graphical described photoresist of exposure method;
3) mask membrane layer that exposes is carried out wet etching, the mask membrane layer line thickness after the side direction undercutting effect in the wet etching course causes corroding is less than photoresist pattern line width;
4) to the hot evaporation mask membrane layer of the structure behind the wet etching, remove photoresist, substrate surface lines number doubles;
5) in another piece substrate surface evaporation mask membrane layer, adopt moulding replication technology, the micro-structural on described first substrate surface is transferred to the mask membrane layer surface of second substrate;
6) the employing dry etch process is removed the residue duplicating material of recess under the mask membrane layer surface micro-structure of second substrate;
7) be that masking layer carries out wet etching, side direction undercutting with the duplicating material structure; And evaporation mask membrane layer once more, remove masking layer.
Repeating said steps 5 further reduces line thickness and lines cycle to step 7.
The material of described mask membrane layer is metal, silicon, organic film or silica.
In the described step 3, control the width of mask membrane layer line thickness by the control etching time.
The beneficial effect that the present invention compared with prior art has is:
1. adopt wet method to realize micro-nano structure processing, therefore do not need expensive electron beam and the straight write device of FIB can produce sub-micron even nano level linear, the area of micro-nano structure can reach the hundreds of millimeter.
2. the micro-nano structure figure of Cheng Xinging can be annular, linear and arbitrary curve, and figure can be array arrangement, also can be irregular arranging.Micro-nano structure can be a metal structure, also can nonmetal structure.
3. the wet etching micro-nano structure is combined with moulding replication technology, coating process and etching technics, can greatly reduce the cost of manufacture of micro-structural.
4. can be used for the being shaped surface plasma micro-nano metal structure of various functions is for surface plasma experimental study and application provide approach.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the endless metal structure vertical view that adopts existing processing lithographic equipment to make among the embodiment one.2 microns of line thickness.1 represents base material K9 glass among the figure.2 represent metal A g membrane material, and 3 represent photoresist film.
Fig. 2 adopts existing endless metal structure of processing the lithographic equipment making to cross the profile at center among the embodiment one.2 microns of line thickness.1 represents base material K9 glass among the figure, and 2 represent metal A g membrane material, and 3 represent photoresist film.
The microstructure graph of Fig. 3 for substrate surface Ag film being carried out obtain after wet etching and the side direction undercutting.1 represents base material K9 glass among the figure, and 2 represent metal A g membrane material, and 3 represent photoresist film.
Fig. 4 is for to carry out the structure that evaporation 100nm metal A g obtains to structure among Fig. 3; 1 represents base material K9 glass among the figure, and 2 represent metal A g membrane material, and 3 represent photoresist film.
Fig. 5 is after adopting LIFT OFF technology to remove photoresist, remaining metal A g structure.1 represents base material K9 glass among the figure, and 2 represent metal A g membrane material.
Fig. 6 is at other K9 glass basic surface evaporation metal AL, and adopts duplication process that micro-structural among Fig. 5 is transferred to the micrographics that this substrate surface obtains; 1 represents base material K9 glass among the figure, and 4 represent metal A L membrane material, the organic material that 5 representatives are used to duplicate.
Fig. 7 adopts the micro-nano structure after dry etch process is removed the residue duplicating material of recess under the micro-nano structure among Fig. 6.1 represents base material K9 glass among the figure, and 4 represent metal A L membrane material, the organic material that 5 representatives are used to duplicate.
Fig. 8 adopts wet corrosion technique that the metal A L film among Fig. 7 is corroded and the side direction undercutting, and the micro-nano structure that obtains behind the evaporation metal AL once more.1 represents base material K9 glass among the figure, and 4 represent metal A L membrane material, the organic material that 5 representatives are used to duplicate.
Fig. 9 is after adopting LIFT OFF technology to remove organic material, remaining metal A L structure.1 represents base material K9 glass among the figure.4 represent metal A L membrane material.
Figure 10 is the micron order grating metal structure vertical view that adopts existing processing lithographic equipment to make among the embodiment two.2 microns of line thickness.6 represent base material SI among the figure, and 7 represent the SIO2 membrane material, and 3 represent photoresist film.
Figure 11 is the micron order grating metal structure profile that adopts existing processing lithographic equipment to make among the embodiment two.2 microns of line thickness.6 represent base material SI among the figure, and 7 represent the SIO2 membrane material, and 3 represent photoresist film.
The microstructure graph of Figure 12 for substrate surface SIO2 film being carried out obtain after wet etching and the side direction undercutting.6 represent base material SI among the figure, and 7 represent the SIO2 membrane material, and 3 represent photoresist film.
Figure 13 is for to carry out evaporation 100nmSIO2 film to structure among Figure 12, and employing LIFT OFF technology is removed the structure that obtains behind the photoresist; 6 represent base material SI among the figure, and 7 represent the SIO2 membrane material.
Figure 14 is through repeat replication and the micro-nano structure that obtains behind the wet etching once more.6 represent base material SI among the figure, and 7 represent the SIO2 membrane material.Not only microstructure size is reduced, and the lines cycle is also reduced simultaneously.
The specific embodiment
Embodiment one is the bore φ=2000 μ m that make by method of the present invention, the surface plasma endless metal structure of line thickness submicron order.Its manufacturing process is as follows:
1) at first select K9 glass 1 as base material: the corrosion rate of K9 glass is very fast, and material price is cheap, also can select other corrosion materials to do substrate as required, for example the glass of quartz, silicon, germanium or other types; At the hot vapor deposition metal A of K9 glass surface g film 200nm, coating 200nm photoresist; By exposure, obtain photoresist figure as depicted in figs. 1 and 2; Accompanying drawing 1 is annular micro-nano structure vertical view, and accompanying drawing 2 is crossed center section plan for micro-nano structure.
2) the metal film Ag layer that exposes is carried out wet etching, the metal wire width after the side direction undercutting effect in the wet etching course will cause corroding is less than photoresist pattern line width.Adopt the nitric acid of 20% concentration that the Ag layer was carried out sideetching 60 seconds, obtain linear shown in Figure 3.Can control the width of gained lines by changing etching time.
3) to the hot evaporation metal Ag of the structure behind the wet etching shown in Figure 3 film 100nm, micro-nano structure as shown in Figure 4; And adopt LIFT OFF technology to remove photoresist, and obtaining micro-nano structure shown in Figure 5, this moment, substrate surface lines number doubled.
4) at an other K9 glass surface evaporation metal AL film (also can be the Ag film), and adopt moulding replication technology, above-mentioned micro-structural is transferred to metal A L film surface.Obtain micro-nano structure shown in Figure 6.
5) the employing dry etch process is removed the residue duplicating material of recess under the micro-nano structure of metal A L film surface as shown in Figure 7.
6) be motherboard with Fig. 7 structure, structure shown in Figure 7 duplicated transfer to the substrate surface that other a slice evaporation has the metal silverskin that repeating step 2 obtains structure shown in Figure 8 to step 5 once more.Adopt LIFT OFF to remove the duplicating material masking layer subsequently, finally obtain structure shown in Figure 9.
Embodiment two is metal grating structures of making submicron order by method of the present invention.Its manufacturing process is as follows:
1) adopt the Si sheet as base material, at Si sheet surface heat vapor deposition SIO2 film 200nm, coating 200nm photoresist:, obtain photoresist figure as shown in Figure 10 and Figure 11 by exposure; Accompanying drawing 10 is a grating micro-nano structure vertical view, and accompanying drawing 11 is the micro-nano structure profile.
2) the SIO2 rete that exposes is carried out wet etching, the line thickness after the side direction undercutting effect in the wet etching course will cause corroding is less than photoresist pattern line width.Adopt the HF acid of 5% concentration that the SIO2 layer was carried out sideetching 5 minutes, obtain linear shown in Figure 12.
3) to the hot evaporation SIO2 of the structure behind the wet etching shown in Figure 11 film 100nm, and adopt LIFT OFF technology to remove photoresist, obtain micro-nano structure shown in Figure 13, this moment, substrate surface lines number doubled.
4) at an other K9 glass surface evaporation metal AL film (also can be the Ag film), and adopt moulding replication technology, above-mentioned micro-structural is transferred to metal A L film surface.
5) the employing dry etch process is removed the residue duplicating material of recess under the micro-nano structure of metal A L film surface.
6) repeatedly repeating step 2 is that masking layer carries out wet etching, side direction undercutting to step 5 with the duplicating material structure; And evaporation metal rete once more, adopt LIFT OFF to remove the duplicating material masking layer subsequently.And obtain structure shown in Figure 14 by dry etch process;
Claims (4)
1, realize the method for surface plasma structure formation, may further comprise the steps:
1) in the hot vapor deposition mask membrane layer of substrate surface, at described mask membrane layer surface coating photoresist;
2) by the graphical described photoresist of exposure method;
3) mask membrane layer that exposes is carried out wet etching, the mask membrane layer line thickness after the side direction undercutting effect in the wet etching course causes corroding is less than photoresist pattern line width;
4) to the hot evaporation mask membrane layer of the structure behind the wet etching, remove photoresist, substrate surface lines number doubles;
5) in another piece substrate surface evaporation mask membrane layer, adopt moulding replication technology, the micro-structural on described first substrate surface is transferred to the mask membrane layer surface of second substrate;
6) the employing dry etch process is removed the residue duplicating material of recess under the mask membrane layer surface micro-structure of second substrate;
7) be that masking layer carries out wet etching, side direction undercutting with the duplicating material structure; And evaporation mask membrane layer once more, remove masking layer.
2, the method for realization surface plasma structure formation according to claim 1 is characterized in that, repeating said steps 5 further reduces line thickness and lines cycle to step 7.
3, the method for realization surface plasma structure formation according to claim 1 is characterized in that, the material of described mask membrane layer is metal, silicon, organic film or silica.
4, the method for realization surface plasma structure formation according to claim 1 is characterized in that, in the described step 3, controls the width of mask membrane layer line thickness by the control etching time.
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| CN2007100646907A CN101024484B (en) | 2007-03-23 | 2007-03-23 | Method for realizing surface plasma structure formation |
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| CN2007100646907A CN101024484B (en) | 2007-03-23 | 2007-03-23 | Method for realizing surface plasma structure formation |
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| CN101024484B CN101024484B (en) | 2010-07-21 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100588742C (en) * | 2008-10-06 | 2010-02-10 | 中国科学院光电技术研究所 | Double-frequency tunable magnetic resonance artificial compound material based on asymmetric metal grating structure |
| CN101907946A (en) * | 2010-08-13 | 2010-12-08 | 牧东光电（苏州）有限公司 | Method for externally expanding single edge of circuit of touch panel |
| CN102053491A (en) * | 2010-12-13 | 2011-05-11 | 苏州大学 | Ultra-deep subwavelength tunable nano photoetching structure and method based on surface plasma resonant cavity |
| CN104495742A (en) * | 2014-12-15 | 2015-04-08 | 北京大学 | Process for processing surface plasmon polariton coupled nano array based on scallop effect |
| CN108682723A (en) * | 2018-05-22 | 2018-10-19 | 中国科学院半导体研究所 | The method for preparing gallium nitride base nanometer ring structure |
| CN109748236A (en) * | 2019-01-12 | 2019-05-14 | 河北工业大学 | A kind of two-dimensional nano mould making method of low cost |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7255805B2 (en) * | 2004-01-12 | 2007-08-14 | Hewlett-Packard Development Company, L.P. | Photonic structures, devices, and methods |
| CN100396595C (en) * | 2005-12-27 | 2008-06-25 | 北京大学 | Method for preparing nanometer suspension arm structure using nanometer embossing and reactive ion etching technology |
-
2007
- 2007-03-23 CN CN2007100646907A patent/CN101024484B/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100588742C (en) * | 2008-10-06 | 2010-02-10 | 中国科学院光电技术研究所 | Double-frequency tunable magnetic resonance artificial compound material based on asymmetric metal grating structure |
| CN101907946A (en) * | 2010-08-13 | 2010-12-08 | 牧东光电（苏州）有限公司 | Method for externally expanding single edge of circuit of touch panel |
| CN102053491A (en) * | 2010-12-13 | 2011-05-11 | 苏州大学 | Ultra-deep subwavelength tunable nano photoetching structure and method based on surface plasma resonant cavity |
| CN102053491B (en) * | 2010-12-13 | 2013-04-10 | 苏州大学 | Ultra-deep subwavelength tunable nano photoetching structure and method based on surface plasma resonant cavity |
| CN104495742A (en) * | 2014-12-15 | 2015-04-08 | 北京大学 | Process for processing surface plasmon polariton coupled nano array based on scallop effect |
| CN108682723A (en) * | 2018-05-22 | 2018-10-19 | 中国科学院半导体研究所 | The method for preparing gallium nitride base nanometer ring structure |
| CN108682723B (en) * | 2018-05-22 | 2019-07-05 | 中国科学院半导体研究所 | The method for preparing gallium nitride base nanometer ring structure |
| CN109748236A (en) * | 2019-01-12 | 2019-05-14 | 河北工业大学 | A kind of two-dimensional nano mould making method of low cost |
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| CN101024484B (en) | 2010-07-21 |
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