CN108682723B - The method for preparing gallium nitride base nanometer ring structure - Google Patents
The method for preparing gallium nitride base nanometer ring structure Download PDFInfo
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- CN108682723B CN108682723B CN201810498089.7A CN201810498089A CN108682723B CN 108682723 B CN108682723 B CN 108682723B CN 201810498089 A CN201810498089 A CN 201810498089A CN 108682723 B CN108682723 B CN 108682723B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
A method of preparing gallium nitride base nanometer ring structure, comprising: in GaN epitaxy on piece spin coating one layer of polymeric, carry out first time nano impression；First piece of nano-imprint stamp is removed after coining, makes polymer that the figure complementary with first piece of nano-imprint stamp be presented；Remove the polymer of figure bottom portion of groove；Polymer graphic is transferred to GaN epitaxy on piece, and GaN epitaxy piece is cleaned, removes polymer；In GaN epitaxy on piece spin on polymers again, second piece of nano-imprint stamp is pressed in above the polymer of second of spin coating, carries out second of nano impression, forms figure；Carry out demoulding and plasma bombardment；One layer of ITO or metal is deposited as exposure mask on the surface of GaN epitaxy on piece figure, removes the polymer on GaN epitaxy piece surface using the method for removing；Etching, obtains a nanometer ring structure；Wet etching removes ITO or metal and polymer, completes the preparation of nanometer ring structure.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to a kind of method for preparing gallium nitride base nanometer ring structure.
Background technique
By development in more than 30 years, GaN base luminescent device occupied in terms of illumination, display, projection, visible light communication
More and more market positions.How to improve its internal quantum efficiency and light extraction efficiency is always the direction of people's unremitting effort.
As micro-nano structure processing technology is more and more skillful, it in GaN base luminescent device application can effectively improve luminous effect
Rate.
Wherein nanometer ring structure can discharge the stress due to caused by lattice mismatch compared to planar structure, to improve
Internal quantum efficiency.In addition, the inner and outer diameter of optimization nano-rings, which makes emission wavelength that multiple reflections occur in ring, forms echo wall die
Its light extraction efficiency can be improved in formula.And nanometer embossing provide it is a kind of Nano grade, repeatedly repeatable, accurate
Nano-rings preparation method.
Summary of the invention
The object of the present invention is to provide a kind of methods for preparing gallium nitride base nanometer ring structure, that is, use nano impression
Technology, flexible utilization nano-imprint stamp are aligned, by imprinting twice, obtain Nano grade, repeatedly repeatable receive
Rice ring structure.
The present invention provides a kind of method for preparing gallium nitride base nanometer ring structure, comprising:
Step 1: in GaN epitaxy on piece spin coating one layer of polymeric, first piece of nano-imprint stamp being pressed in above and applied
One predetermined pressure carries out first time nano impression；
Step 2: removing first piece of nano-imprint stamp after coining, polymer is presented and first piece of nano impression
The figure of template complementation；
Step 3: the polymer of using plasma bombardment removal figure bottom portion of groove；
Step 4: polymer graphic being transferred to GaN epitaxy on piece using ICP etching technics, and GaN epitaxy piece is carried out
Cleaning, removes polymer；
Step 5: in GaN epitaxy on piece spin on polymers again, second piece of nano-imprint stamp being pressed in second of spin coating
Polymer above, carry out second of nano impression, formed figure；
Step 6: repeating step 2 and step 3, carry out demoulding and plasma bombardment；
Step 7: one layer of ITO or metal is deposited as exposure mask, using the side of removing on the surface of GaN epitaxy on piece figure
Method removes the polymer on GaN epitaxy piece surface；
Step 8: doing exposure mask using ITO or metal and carry out ICP etching, obtain a nanometer ring structure；
Step 9: wet etching removes ITO or metal and polymer, completes the preparation of nanometer ring structure.
Wherein one predetermined pressure of application, which is 0.01MPa-1MPa.
Wherein the polymer refers to the material of the figure on copying nano imprint template, including photonasty or heat
The organic matter of plasticity.
Wherein the first time and second of nano impression include hot padding, ultraviolet nanometer coining, micro-contact printing or
The nanometer embossing that person combines.
Wherein the characteristic size as first piece and second piece nano-imprint stamp is 10nm-2um, figure row
Column mode is Hexagonal array or Square array.
Wherein the metal as exposure mask is Ni or Cr.
It is ITO etching agent that wherein the wet etching, which removes the solution of ITO, and the solution for removing metal is chloroazotic acid, is removed
The solution of polymer is stripper, and plasma bombardment is oxygen gas plasma.
The invention has the advantages that flexible utilization nano-imprint stamp is aligned using nanometer embossing, lead to
It is imprinted after twice, nanometer ring structure obtaining Nano grade, repeatedly repeating.
Detailed description of the invention
In order to be best understood from detailed process and operating procedure of the invention, below in conjunction with drawings and the specific embodiments
Detailed description is as follows, in which:
Fig. 1 is preparation technology flow chart of the invention；
Fig. 2 is the nano-pore structure nano-imprint stamp structure top view of Hexagonal array.
Specific embodiment
It is specifically intended that the present invention has used nanometer embossing twice, it requires two pieces of nano-imprint stamp energy
Enough meet the needs of alignment, by the nano-imprint stamp of self-definition design, is accurately controlled the position of each figure, including
Position, figure period and the size at whole figure region distance edge, and done on first piece and second piece of nano-imprint stamp
Alignment mark out, alignment mark can be any distinguishable figure for being different from cycle graph, accurate right to realize with this
It is quasi-.
As shown in Figs.1 and 2, the present invention provides a kind of method for preparing gallium nitride base nanometer ring structure, comprising:
Step 1: in the GaN epitaxy on piece spin coating one layer of polymeric film obtained, film thickness 0.5um-6um,
First piece of nano-imprint stamp (refering to Fig. 2) is pressed in above and is applied a predetermined pressure, carries out first time nano impression, institute
The first piece of nano-imprint stamp stated uses the period for four directions or the nano-pore structure of Hexagonal array, and diameter is nano-rings knot
The outer annular diameter of structure, range are 10nm-2um, and periodic regime is 10nm-10cm, one predetermined pressure of application, the pressure
Range is 0.01MPa-1MPa, and the polymer refers to the material of the figure on copying nano imprint template, including sense
Photosensitiveness or thermoplastic organic matter, such as photoresist；
Step 2: removing first piece of nano-imprint stamp after coining, polymer is presented and first piece of nano impression
The figure of template complementation；
Step 3: the polymer of using plasma bombardment removal figure bottom portion of groove exposes the GaN epitaxy piece of bottom,
The plasma is oxygen gas plasma, and the time is 1-5 minutes；
Step 4: exposed GaN epitaxy piece part being performed etching using ICP etching technics, etching gas BCl3, carved
Erosion depth is 50nm-2um, polymer graphic is transferred to GaN epitaxy on piece, and clean to GaN epitaxy piece, removed surplus
Remaining polymer, the solution used are stripper, and temperature is greater than 80 DEG C, add ultrasound, and the time is greater than 5 minutes, use ethyl alcohol again later
Solution is cleaned, and is finally cleaned and is dried up with deionized water；
Step 5: in GaN epitaxy on piece, spin on polymers, film thickness 0.5um-6um, the polymer are again
Refer to the material for figure on copying nano imprint template, including photonasty or thermoplastic organic matter, is selected as being easy to shell herein
From negtive photoresist, by the alignment mark of second piece of nano-imprint stamp and first piece of impression block under high magnification microscope to thereafter
It is pressed in above the polymer of second of spin coating, carries out second of nano impression, form figure, second piece of nano-imprint stamp is adopted
With periodic arrangement mode identical with first piece of nano-imprint stamp, diameter is the annular diameters of nanometer ring structure (less than the
The dimension of picture of one piece of nano-imprint stamp), the period is identical as the period of first piece of nano-imprint stamp, and it is pre- then to apply one
Constant-pressure, the pressure limit are 0.01MPa-1MPa, and the first time and second of nano impression include hot padding, ultraviolet
Nano impression, micro-contact printing or the nanometer embossing combined；
Step 6: repeating step 2 and step 3, carry out demoulding and plasma bombardment；
Step 7: one layer of ITO or metal is deposited as exposure mask on the surface of GaN epitaxy on piece figure, thickness is less than outside GaN
The height for prolonging on piece figure removes the polymer and metal on GaN epitaxy piece surfacial pattern, institute using the method for blue film stripping
The metal as exposure mask stated is Ni or Cr,；
Step 8: doing exposure mask using ITO remaining in groove or metal and ICP is carried out to exposed GaN epitaxy piece part
Etching, etching gas BCl3, etching depth and the etching depth of step 4 be consistent, and obtains a nanometer ring structure；
Step 9: wet etching removes ITO or metal and polymer, and the solution that the wet etching removes ITO is
ITO etching agent, temperature are greater than 40 DEG C, and the time is greater than 1 minute, and the solution for removing metal is chloroazotic acid, and the time is greater than 30 seconds, removes
The solution of polymer is stripper, and temperature is greater than 80 DEG C, adds ultrasound, and the time is greater than 5 minutes, finally uses ethyl alcohol and deionized water
It is cleaned, and is dried up, complete the preparation of nanometer ring structure.
The above, the only specific embodiment in the present invention, but scope of protection of the present invention is not limited thereto,
Any people for being familiar with the technology within the technical scope disclosed by the invention, any modification, equivalent substitution, improvement and etc. done,
It should all be included in the protection scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of claims
Subject to enclosing.
Claims (6)
1. a kind of method for preparing gallium nitride base nanometer ring structure, comprising:
Step 1: in GaN epitaxy on piece spin coating one layer of polymeric, first piece of nano-imprint stamp being pressed in above and applies one in advance
Constant-pressure carries out first time nano impression；
Step 2: removing first piece of nano-imprint stamp after coining, polymer is presented mutual with first piece of nano-imprint stamp
The figure of benefit；
Step 3: the polymer of using plasma bombardment removal figure bottom portion of groove；
Step 4: polymer graphic is transferred to GaN epitaxy on piece using ICP etching technics, and GaN epitaxy piece is cleaned,
Remove polymer；
Step 5: in GaN epitaxy on piece spin on polymers again, second piece of nano-imprint stamp being pressed in the poly- of second of spin coating
Laminate carries out second of nano impression, forms figure；
Step 6: repeating step 2 and step 3, carry out demoulding and plasma bombardment；
Step 7: one layer of ITO or metal is deposited as exposure mask on the surface of GaN epitaxy on piece figure, is removed using the method for removing
The polymer on GaN epitaxy piece surface；
Step 8: doing exposure mask using ITO or metal and carry out ICP etching, obtain a nanometer ring structure；
Step 9: wet etching removes ITO or metal and polymer, completes the preparation of nanometer ring structure；
Second of nano impression is wherein carried out, figure is formed, second piece of nano-imprint stamp uses and first piece of nano impression mould
The identical periodic arrangement mode of plate, diameter are the annular diameters of nanometer ring structure.
2. the method according to claim 1 for preparing gallium nitride base nanometer ring structure, wherein the pre- level pressure of application one
Power, the pressure limit are 0.01MPa-1MPa.
3. the method according to claim 1 for preparing gallium nitride base nanometer ring structure, wherein the polymer refers to use
In the material of figure on copying nano imprint template, including photonasty or thermoplastic organic matter.
4. the method according to claim 3 for preparing gallium nitride base nanometer ring structure, wherein the first time and second
Secondary nano impression includes hot padding, ultraviolet nanometer coining, micro-contact printing or the nanometer embossing combined.
5. the method according to claim 1 for preparing gallium nitride base nanometer ring structure, wherein the gold as exposure mask
Belonging to is Ni or Cr.
6. the method according to claim 1 for preparing gallium nitride base nanometer ring structure, wherein the wet etching removes
The solution of ITO is ITO etching agent, and the solution for removing metal is chloroazotic acid, and the solution for removing polymer is stripper, and plasma bangs
It hits as oxygen gas plasma.
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| CN101024484A (en) * | 2007-03-23 | 2007-08-29 | 中国科学院光电技术研究所 | Method for realizing surface plasma structure formation |
| CN102097296A (en) * | 2010-10-09 | 2011-06-15 | 北京大学 | Preparation method of semiconductor nano circular ring |
| CN102214742A (en) * | 2011-06-02 | 2011-10-12 | 华中科技大学 | Method for preparing two-dimensional photonic crystal structure GaN (gallium nitride) based LED (light emitting diode) |
| CN102701141A (en) * | 2012-05-28 | 2012-10-03 | 西北工业大学 | Method for manufacturing high depth-to-width ratio micro-nano composite structure |
| CN102714140A (en) * | 2010-01-22 | 2012-10-03 | 韩国生命工学研究院 | Lithography method using tilted evaporation |
| US8637346B1 (en) * | 2012-12-04 | 2014-01-28 | Gwangju Institute Of Science And Technology | Method for manufacturing graphene nano array and field-effect transistor including the same |
| CN104181769A (en) * | 2014-08-07 | 2014-12-03 | 北京大学 | Crater-type graphical sapphire substrate and preparation method thereof |
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2018
- 2018-05-22 CN CN201810498089.7A patent/CN108682723B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101024484A (en) * | 2007-03-23 | 2007-08-29 | 中国科学院光电技术研究所 | Method for realizing surface plasma structure formation |
| CN102714140A (en) * | 2010-01-22 | 2012-10-03 | 韩国生命工学研究院 | Lithography method using tilted evaporation |
| CN102097296A (en) * | 2010-10-09 | 2011-06-15 | 北京大学 | Preparation method of semiconductor nano circular ring |
| CN102214742A (en) * | 2011-06-02 | 2011-10-12 | 华中科技大学 | Method for preparing two-dimensional photonic crystal structure GaN (gallium nitride) based LED (light emitting diode) |
| CN102701141A (en) * | 2012-05-28 | 2012-10-03 | 西北工业大学 | Method for manufacturing high depth-to-width ratio micro-nano composite structure |
| US8637346B1 (en) * | 2012-12-04 | 2014-01-28 | Gwangju Institute Of Science And Technology | Method for manufacturing graphene nano array and field-effect transistor including the same |
| CN104181769A (en) * | 2014-08-07 | 2014-12-03 | 北京大学 | Crater-type graphical sapphire substrate and preparation method thereof |
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