CN101021593A - Integrated photon crystal double waveguide back coupling fluid refractive index sensor - Google Patents
Integrated photon crystal double waveguide back coupling fluid refractive index sensor Download PDFInfo
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- CN101021593A CN101021593A CN 200710064457 CN200710064457A CN101021593A CN 101021593 A CN101021593 A CN 101021593A CN 200710064457 CN200710064457 CN 200710064457 CN 200710064457 A CN200710064457 A CN 200710064457A CN 101021593 A CN101021593 A CN 101021593A
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Abstract
The invention belongs to the photoelectronic technical field, characterized in that: it adopts electron beam exposure and dry-etching process to form a photon crystal double-waveguide structure on semiconductor, where the two ends of the photon crystal waveguide are connected with light guide connection light waveguides and it removes part of the sacrificial layer by wet etching process to form a bridge support structure. By reverse coupling action of the photon crystal double waveguide, the light of evenly symmetric transmission mode cross over frequency can be reversely coupled from straight-through waveguide into coupling waveguide so as to cause the transmission spectrum of the straight-through waveguide has obvious hollows. When the detected fluid fills periodical holes of photon crystal or upper and lower spaces of the photon crystal layer, dispersion characteristic of the transmission mode in the photon crystal double waveguide is changed, or changed by external force, which can cause variation of evenly symmetric transmission mode cross over frequency so as to cause variation of transmission spectrum of the straight-through waveguide, thus implementing microflow refractivity detection and sensing of high sensitivity and integrated photon crystal structure.
Description
Technical field
The present invention relates to that field such as a kind of, sensing integrated at photon uses can be integrated the fluid refracting rate sensor based on the effect of photon crystal double waveguide reverse coupled, belong to the integrated opto-electronic technical field.
Background technology
The detection and the sensing of pettiness amount fluid refracting rate have important use in fields such as biomedicines.Photon crystal structure with unique optical properties is one of effective way that realizes rate detection of pettiness amount fluid refracting and sensing.
Photonic crystal is a kind of dielectric structure of artificial dielectric coefficient cyclical variation (optical wavelength yardstick).Be subjected to the effect of cycle potential field with electronics in the crystal and to form the electron energy band similar, the photon energy that allows to propagate in this periodical media structure is zonal arrangement, promptly forms so-called photonic band gap, so be called " photonic crystal ".The light that photonic crystal can be forbidden being in the photon band gap frequency domain is propagated; In photonic crystal, introduce " the photon local " that defective forms band gap limits, have the unique function of band gap limits guided wave and microcavity resonance, can influence atom and the luminescence process of molecule and the propagation characteristic of light in (or change) photonic crystal.Therefore, can control the emission and the propagation of light artificially, not only can produce the new function that many traditional optoelectronic devices are difficult to realize, also make the photon integrated circuit of wavelength level (micron-scale) device become possibility by the design of crystal structure.
At present, adopt photon crystal structure to carry out that pettiness amount fluid refracting rate is surveyed and sensing Study of An be mostly adopt micro-cavity structure, this structure need add pump light, the light signal that is detected is perpendicular to the surface scattering that makes progress, there are shortcomings such as noise is big, can not the plane integrated, are difficult to practicality.
Summary of the invention
The present invention is a kind of index sensor based on the effect of photon crystal double waveguide reverse coupled that can be integrated that provides in order to solve the problem in the existing photonic crystal index sensor scheme.
The light that the photon band gap that occurs in the photonic crystal is forbidden dropping in this " band gap " frequency range is propagated, and forms natural optical filter and reverberator.In photonic crystal, remove delegation's airport and form straight-through waveguide, increase delegation's airport, and regulate the width formation coupled waveguide of waveguide.There is the opposite even symmetry conduction mode of group velocity direction in two kinds of waveguides, when between these two kinds of waveguides during close together, just formed waveguide-coupled structure (Fig. 1), two opposite even symmetry conduction modes of group velocity direction can produce coupling (Fig. 2) at the place, point of crossing, the luminous energy of point of crossing respective frequencies to coupled waveguide, causes straight-through transmitting light wave guide to compose existing significant depressions (Fig. 3) from straight-through waveguide reverse coupled.Filler in the cycle of photonic crystal hole, when perhaps the refractive index of the filler in space changes about the layer of photonic crystals, the frequency of the depression that occurs on the transmission spectral line will change thereupon, relation such as Fig. 4 of filler refractive index and depression frequency, based on this principle, tested flowing material (liquid or gas) can be filled into the hole place or the layer of photonic crystals space up and down of photonic crystal, realize the detection and the sensing of detected fluid variations in refractive index by monitoring by the variation that sees through spectrum of straight-through waveguide.
The invention is characterized in, contain: at a Si-SiO
2Following each parts of making on-Si the substrate wafer:
Si substrate (51),
SiO
2Bridge supporting construction (52) is positioned on the Si substrate (51),
Bridge-type Si flat board (53) is positioned at SiO
2On the bridge supporting construction (52),
Si 2 D photon crystal (57) be connected waveguide (56) and go up adopt electron beam exposure and dry etch process to form at described bridge-type Si flat board (53), the aperture of the 2 D photon crystal in this Si 2 D photon crystal (57), the arrangement cycle in hole is set, in described Si 2 D photon crystal (57), introduce the defective of two kinds of following different structures, form straight-through waveguide (54) of Si and Si coupled waveguide (55) respectively, constituting double wave leads, wherein, remove delegation's airport and regulate duct width and form straight-through waveguide (54), the width adjusting scope of this straight-through waveguide (54) is 0.1W
0～3.0W
0, W
0Be the width of common one-way road defective, W
0=1.732a, a are lattice period; Radius by changing delegation's airport is also regulated duct width and is formed coupled waveguide (55), and the range of adjustment of the airport radius of coupled waveguide (55) is 0.1r～3r, r be do not change before the radius of airport, the width adjusting scope of this coupled waveguide is 0.1W
0～3.0W
0, W
0=1.732a;
Connect the input that optical waveguide (56) lays respectively at straight-through waveguide (54), the input of output terminal and coupled waveguide (55), output terminal, to produce transmission spectrum, the group velocity direction of the even symmetry conduction mode of described straight-through waveguide (54) and coupled waveguide (55) is opposite, the luminous energy of the point of crossing respective frequencies of these two patterns is from leading directly to waveguide (54) reverse coupled to coupled waveguide (55), cause the output of straight-through waveguide (54) to connect significantly caving in of observing in the waveguide through composing now, the frequency that depression takes place along with in the described cycle hole or this Si 2 D photon crystal (57) up and down the filler in the space change of refractive and change, realized that the refractive index that is detected flowing material surveys and sensing.
Used substrate wafer is GaAs, and its jackshaft supporting construction is the AlGaInP sacrifice layer, and the bridge-type flat board is the GaAs ducting layer.Used substrate wafer is InP, and wherein, the bridge supporting construction is the InGaAsP sacrifice layer, and the bridge-type flat board is the InP ducting layer.Used substrate wafer is GaAs, and the bridge supporting construction is Al
2O
3Sacrifice layer, bridge-type flat board are the AlAs ducting layers.
Owing to the present invention is based on the effect of photon crystal double waveguide reverse coupled, monitoring is only transmitted in straight-through waveguide, and the plane that helps device is integrated; Because what survey is to see through the frequency displacement that spectrum goes up sharp-pointed depression, is obtaining to have advantage on the high sensitivity characteristic; Simultaneously, be recessed in through the position in the spectrum, sharp-pointed degree, cup depth and can pass through to change structural parameters: as the distance between two waveguides, the width of waveguide and length, air aperture r, r/a etc. regulate, have suitable dirigibility at design aspect, can design the needs that different structures satisfies different refractivity scope sensing.
Description of drawings
Fig. 1 photon crystal double waveguide structure: 1. high refractive index medium flat board, 2. straight-through waveguide, 3. coupled waveguide 4. connects optical waveguide, 5.2 dimensional photonic crystal periodic structures.
There is reverse coupled between Fig. 2 photon crystal double waveguide even symmetry conduction mode: 21. straight-through waveguide idol moulds, the 22. straight-through strange moulds of waveguide, 23. coupled waves conductive coupling moulds, reverse coupled takes place in 24. even symmetry conduction mode point of crossing.
Depression on the straight-through waveguide transmission spectrum that Fig. 3 reverse coupled causes: the transmission spectrum of 31. straight-through waveguides, the depression on the straight-through waveguide transmission spectrum that 32. reverse coupled cause.
Fig. 4 transmits the variation of the centre wavelength (frequency) of the depression that occurs on the spectral line along with the fill fluid material refractive index.
Fig. 5 embodiment 1 is based on the fluid refracting rate sensor construction synoptic diagram of photon crystal double waveguide reverse coupled effect:
51.Si substrate, 52.SiO
2The bridge supporting construction, 53. bridge-type Si flat boards, 54.Si leads directly to waveguide, the 55.Si coupled waveguide, 56.Si connects optical waveguide, 57.Si-2 dimensional photonic crystal.
Fig. 6 embodiment 2 is based on the fluid refracting rate sensor construction synoptic diagram of photon crystal double waveguide reverse coupled effect:
61.GaAs substrate, 62.AlGaInP bridge supporting construction, 63. bridge-type GaAs flat boards, 64.GaAs leads directly to waveguide, the 65.GaAs coupled waveguide, 66.GaAs connects optical waveguide, 67.GaAs-2 dimensional photonic crystal.
Fig. 7 embodiment 3 is based on the fluid refracting rate sensor construction synoptic diagram of photon crystal double waveguide reverse coupled effect:
71.InP substrate, 72.InGaAsP bridge supporting construction, 73. bridge-type InP flat boards, 74.InP leads directly to waveguide, the 75.InP coupled waveguide, 76.InP connects optical waveguide, 77.InP-2 dimensional photonic crystal.
Fig. 8 embodiment 4 is based on the fluid refracting rate sensor construction synoptic diagram of photon crystal double waveguide reverse coupled effect:
81.GaAs substrate, 82.Al
2O
3The bridge supporting construction, 83. bridge-type AlAs flat boards, 84.AlAs leads directly to waveguide, the 85.AlAs coupled waveguide, 86.AlAs connects optical waveguide, 87.AlAs--2 dimensional photonic crystal.
Embodiment
The present invention realizes according to following technical scheme:
At first need to carry out structure Design, determine the width of aperture, cycle and two waveguides of 2 D photon crystal, parameters such as hole size, make two waveguides have the opposite even symmetry conduction mode of group velocity, and form reverse coupled at place, the point of crossing of pattern. on the substrate of Si or semiconductor III-V family material, grow the sacrifice layer that can make bridge architecture successively and be used for forming the light waveguide-layer of photonic crystal, afterwards, on light waveguide-layer, adopt technologies such as electron beam exposure and dry etching to produce the 2 dimensional photonic crystal twi guide structures that have the line defect figure.And, constitute the bridge waveguide structure by selecting wet etching to remove a part of sacrifice layer.
Light source of the present invention can be integrated based on the fluid refracting rate sensor construction of photon crystal double waveguide reverse coupled effect as shown in Figure 5.Select Si-SiO
2The SOI substrate wafer that-Si constitutes, SiO wherein
2Layer thickness is 2 μ m, the thick 220nm of the Si on top.Adopt technologies such as electron beam exposure and dry etching, on the Si of the superiors flat board 53, produce connection waveguide 56 and 2 dimensional photonic crystal cycle pore structures 57, and form twi guide structure 54,55.Remove a part of SiO by selecting wet etching
2Layer, the SiO that stays
2Layer is exactly a bridge supporting construction 52.By connecting the light field that waveguide 56 imports, during by straight-through waveguide 54, because and the reverse coupled effect of coupled waveguide 55, connect waveguide place in output and can observe the spectrum that sees through shown in Figure 3, the frequency that sees through the generation depression on the spectrum along with in the cycle hole or photon crystal wave-guide up and down the filler in the space change of refractive and change, see through the frequency change that spectrum goes up depression by observation and analysis, can realize high-precision refractive index detection and sensing.
Light source of the present invention can be integrated based on the fluid refracting rate sensor construction of photon crystal double waveguide reverse coupled effect as shown in Figure 6.Select the substrate 61 of GaAs material, grow 2 μ m AlGaInP sacrifice layers and 220nm GaAs ducting layer thereon.Adopt technologies such as electron beam exposure and dry etching, on the GaAs of the superiors flat board 63, produce connection waveguide 66 and 2 dimensional photonic crystal cycle pore structures 67, and form twi guide structure 64,65.By selecting wet etching to remove a part of AlGaInP layer, the AlGaInP layer that stays is exactly a bridge supporting construction 62.By connecting the light field that waveguide 66 imports, during by straight-through waveguide 64, because and the reverse coupled effect of coupled waveguide 65, connect waveguide place in output and can observe the spectrum that sees through shown in Figure 3, the frequency that sees through the generation depression on the spectrum along with in the cycle hole or photon crystal wave-guide up and down the filler in the space change of refractive and change, see through the frequency change that spectrum goes up depression by observation and analysis, can realize high-precision refractive index detection and sensing.Because the GsAs/AlGaInP system material might be made active luminescent device, this structure is compared with structure described in the embodiment 1, and the structure of present embodiment might realize the photonic crystal refractive index sensing chip integrated with light source.
Embodiment 3
Light source of the present invention can be integrated based on the fluid refracting rate sensor construction of photon crystal double waveguide reverse coupled effect as shown in Figure 7.Select the substrate 71 of InP material, grow 2 μ m InGaAsP sacrifice layers and 220nm InP ducting layer thereon.Adopt technologies such as electron beam exposure and dry etching, on the InP of the superiors flat board 73, produce connection waveguide 76 and 2 dimensional photonic crystal cycle pore structures 77, and form twi guide structure 74,75.By selecting wet etching to remove a part of InGaAsP layer, the InGaAsP layer that stays is exactly a bridge supporting construction 72.By connecting the light field that waveguide 76 imports, during by straight-through waveguide 74, because and the reverse coupled effect of coupled waveguide 75, connect waveguide place in output and can observe the spectrum that sees through shown in Figure 3, the frequency that sees through the generation depression on the spectrum along with in the cycle hole or photon crystal wave-guide up and down the filler in the space change of refractive and change, see through the frequency change that spectrum goes up depression by observation and analysis, can realize high-precision refractive index detection and sensing.The structure of present embodiment is not only similar with embodiment 2, have can with the integrated potentiality of light source, the more important thing is that the light source luminescent wavelength of InP substrate is at the 1.3-1.5 micron, be fit to the transmission of optical fiber, present embodiment is for realizing that being far apart ground refractive index remote sensing system provides possibility.
Light source of the present invention can be integrated based on the fluid refracting rate sensor construction of photon crystal double waveguide reverse coupled effect as shown in Figure 8.Select the substrate 81 of GaAs material, 2 μ m Al thereon grow
2O
3Sacrifice layer and 220nm AlAs ducting layer.Adopt technologies such as electron beam exposure and dry etching, on the AlAs of the superiors flat board 83, produce connection waveguide 86 and 2 dimensional photonic crystal cycle pore structures 87, and form twi guide structure 84,85.Remove a part of Al by selecting wet etching
2O
3Layer, the Al that stays
2O
3Layer is exactly a bridge supporting construction 82.By connecting the light field that waveguide 86 imports, during by straight-through waveguide 84, because and the reverse coupled effect of coupled waveguide 85, connect waveguide place in output and can observe the spectrum that sees through shown in Figure 3, the frequency that sees through the generation depression on the spectrum along with in the cycle hole or photon crystal wave-guide up and down the filler in the space change of refractive and change, see through the frequency change that spectrum goes up depression by observation and analysis, can realize high-precision refractive index detection and sensing.
Claims (6)
1. integrated photon crystal double waveguide back coupling fluid refractive index sensor is characterized in that, contains: at a Si-SiO
2Following each parts of making on-Si the substrate wafer:
Si substrate (51),
SiO
2Bridge supporting construction (52) is positioned on the Si substrate (51),
Bridge-type Si flat board (53) is positioned at SiO
2On the bridge supporting construction (52),
Si 2 D photon crystal (57) be connected waveguide (56), go up employing electron beam exposure and dry etch process formation at described bridge-type Si flat board (53), the aperture of the 2 D photon crystal in this Si 2 D photon crystal (57), the arrangement cycle in hole is set, in described Si 2 D photon crystal (57), introduce the defective of two kinds of following different structures, form straight-through waveguide (54) of Si and Si coupled waveguide (55) respectively, constituting double wave leads, wherein, remove delegation's airport and regulate duct width and form straight-through waveguide (54), the width adjusting scope of this straight-through waveguide (54) is 0.1W
0～3.0W
0, W
0Be the width of common one-way road defective, W
0=1.732a, a are lattice period; Radius by changing delegation's airport is also regulated duct width and is formed coupled waveguide (55), and the range of adjustment of the airport radius of coupled waveguide (55) is 0.1r～3r, r be do not change before the radius of airport, the width adjusting scope of this coupled waveguide is 0.1W
0～3.0W
0, W
0=1.732a;
Connect the input that optical waveguide (56) lays respectively at straight-through waveguide (54), the input of output terminal and coupled waveguide (55), output terminal, to produce transmission spectrum, the group velocity direction of the even symmetry conduction mode of described straight-through waveguide (54) and coupled waveguide (55) is opposite, the luminous energy of the point of crossing respective frequencies of these two patterns is from leading directly to waveguide (54) reverse coupled to coupled waveguide (55), cause the output of straight-through waveguide (54) to connect significantly caving in of observing in the waveguide (56) through composing now, the frequency that depression takes place is along with in the described cycle hole, perhaps this Si 2 D photon crystal (57) up and down the filler in the space change of refractive and change, realized that the refractive index that is detected flowing material surveys and sensing.
2. integrated photon crystal double waveguide back coupling fluid refractive index sensor according to claim 1, it is characterized in that, as lattice period a=400nm, during photonic crystal airport radius r=0.28a, refractive index n=the 1+ of flowing material (λ-1538.87)/103.75, wherein λ is the centre wavelength of transmission spectrum recess, and unit is nm.
3. integrated photon crystal double waveguide back coupling fluid refractive index sensor according to claim 1 is characterized in that used substrate wafer is GaAs, and its jackshaft supporting construction is the AlGaInP sacrifice layer, and the bridge-type flat board is the GaAs ducting layer.
4. integrated photon crystal double waveguide back coupling fluid refractive index sensor according to claim 1 is characterized in that used substrate wafer is InP, and wherein, the bridge supporting construction is the InGaAsP sacrifice layer, and the bridge-type flat board is the InP ducting layer.
5. integrated photon crystal double waveguide back coupling fluid refractive index sensor according to claim 1 is characterized in that used substrate wafer is GaAs, and the bridge supporting construction is Al
2O
3Sacrifice layer, bridge-type flat board are the AlAs ducting layers.
6. according to any one described integrated photon crystal double waveguide back coupling fluid refractive index sensor in claim 3 or 4 or 5, it is characterized in that, as lattice period a=400nm, during photonic crystal airport radius r=0.28a, refractive index n=the 1+ of flowing material (λ-1538.87)/103.75, wherein, λ is a transmission spectrum recess centre wavelength, and unit is nm.
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| CNB2007100644579A CN100470276C (en) | 2007-03-16 | 2007-03-16 | Integrated photon crystal double waveguide back coupling fluid refractive index sensor |
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| CNB2007100644579A CN100470276C (en) | 2007-03-16 | 2007-03-16 | Integrated photon crystal double waveguide back coupling fluid refractive index sensor |
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