CN104977654A - PLC planar optical waveguide and micro flow meter integrated machining method - Google Patents
PLC planar optical waveguide and micro flow meter integrated machining method Download PDFInfo
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- CN104977654A CN104977654A CN201510340157.3A CN201510340157A CN104977654A CN 104977654 A CN104977654 A CN 104977654A CN 201510340157 A CN201510340157 A CN 201510340157A CN 104977654 A CN104977654 A CN 104977654A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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Abstract
The purpose of the invention is to provide a PLC planar optical waveguide and micro flow meter integrated machining method. The method comprises the following steps: growing a substrate on a silicon wafer base, depositing a doped waveguide core layer on the substrate, growing a mask layer, generating a layer of pattern on the mask layer through a photo-etching process, transferring the pattern of the mask layer to the waveguide core layer through dry etching, stripping the mask layer, and depositing a cover layer; and forming a pattern on the cover layer through a photo-etching process, etching part of the cover layer until the selected side wall of the waveguide core needing to be machined into a micro channel is exposed, using KOH solution or tetramethyl ammonium hydroxide solution to corrode the part of the waveguide core until the micro channel is formed, thus making the part of the waveguide core and the unexposed and uncorroded part of the waveguide core integrated on the same waveguide chip.
Description
Technical field
The invention belongs to light stream measuring device field, be specifically related to the integration processing method of a kind of PLC planar optical waveguide and micro-flowmeter.
Background technology
Light stream measuring device developed very fast in the last few years.This field combines the technology of micro-flowmeter and optical device aspect, and its application product comprises biochemical sensor, energy and image display etc.Wherein, the basic structure of micro-flowmeter device is that processing Embedded passage produces microfluidic by fluid, then reprocesses optical waveguide thereon and just defines light stream measuring device.
A lot of research institution uses epoxy resin PDMS (dimethyl silicone polymer) as the main material of micro-flowmeter device at present, there is good optical property due to it and easily manufacture, but the chemical stability of epoxide resin material is not good, high temperature or other environmental factor can damage the usability of device.
Another kind method utilizes glass material as the main material of micro-flowmeter device, but then the method preparing micro-flowmeter device of existing use glass material mainly anneals by forming pore, pore expands and forms microchannel, and this method exists the problem being difficult to the shape and size accurately controlling microchannel.
Summary of the invention
The object of the present invention is to provide that a kind of chemical stability is good, usability is good, accurately can control the integration processing method of the integrated PLC planar optical waveguide on one chip in the shape and size of microchannel, waveguide core (optical device) and microchannel and micro-flowmeter simultaneously.
For realizing object of the present invention, the invention provides the integration processing method of a kind of PLC planar optical waveguide and micro-flowmeter, growth substrates on Silicon Wafer matrix, the waveguide core layer of deposited on substrates doping, growth mask layer, generate a layer pattern by photoetching process at mask layer, by dry etching by the Graphic transitions of mask layer to waveguide core layer, after lift-off mask layer, then sedimentary mantle thereon; Figure is formed on the cover layer by photoetching process, etched portions overlayer is until expose the selected sidewall of the waveguide core being processed into microchannel that needs, corrode the waveguide core at this place until form microchannel by KOH solution or tetramethyl ammonium hydroxide solution, thus be not exposed to the outer waveguide core be not corroded and be integrated on one piece of waveguide chip.
The waveguide core layer of described doping is the waveguide core layer of mixing germanium.
The waveguide core layer of described doping is further for mixing phosphorus glass.
The mass concentration of KOH solution is preferably 30-45%.
The mass concentration of tetramethyl ammonium hydroxide solution is preferably 20-30%.
By the mass concentration of preferred KOH solution and tetramethyl ammonium hydroxide solution, better corrosion efficiency and corrosive effect can be obtained, the reservation of photoconduction core being more conducive to being formed the controlled microchannel of shape and size and not being corroded.
The waveguide core layer of described doping and the relative index of refraction of substrate are preferably 2.5-3%.
Preferred by this refractive index, can increase the corrosion Selection radio of solution, obtain better corrosive effect, is more conducive to forming the controlled microchannel of shape and size.
The temperature of corrosion is preferably 60-70 DEG C.
Under preferred corrosion temperature, better corrosion efficiency and corrosive effect can be obtained, more be conducive to forming the controlled microchannel of shape and size.
Described waveguide core layer is preferably Ge-doped SiO
2.
Described overlayer is preferably boron phosphorus doping glassy layer, and described substrate is SiO
2.
Beneficial effect of the present invention: the chemical stability existed when the present invention is directed to the main material of existing use epoxy resin PDMS as micro-flowmeter device is not good, and high temperature or other environmental factor can damage the usability of device; Use the present situation being difficult to the shape and size accurately controlling microchannel during the main material of glass material as micro-flowmeter device, provide one can under the condition such as good, the high temperature of chemical stability usability good, and accurately can control the shape and size of microchannel, waveguide core (optical device) and the integrated integration processing method on one chip of micro-channel simultaneously.First, the material of main part that the present invention uses is glass material, and for using the problem being difficult to the shape and size accurately controlling microchannel existed during glass material, inventor obtains required form in etching waveguide core layer, thereon after sedimentary mantle, dexterously by the waveguide core layer sidewall that etching overlayer covers, exposed portion needs to form the waveguide core layer side of microchannel, and by KOH or tetramethyl ammonium hydroxide solution to the SiO of doping
2(i.e. waveguide core material) and unadulterated SiO
2substrate layer corrosion is selectively this characteristic.By the SiO that KOH appearance liquid or tetramethyl ammonium hydroxide solution will adulterate
2erode and thus form microchannel.
The waveguide core layer of side is exposed by KOH solution or tetramethyl ammonium hydroxide solution corrosion, use job operation of the present invention, after the size and shape waveguide core of required passage can being obtained according to the needs etching of technician, the shape and size of microchannel are accurately controlled, the waveguide core integration processing method on one chip finally obtaining the controlled microchannel of shape and size Yu be not corroded by corrosion process cleverly.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of the integration processing method of PLC planar optical waveguide of the present invention and micro-flowmeter.
Embodiment
Following examples are intended to further illustrate content of the present invention, but the present invention is not limited to following embodiment.
Embodiment 1
Step 1:
Be matrix with Silicon Wafer, by thermal oxide growth 15-20 μm of thick silicon dioxide substrates on Silicon Wafer.
Step 2:
Use PECVD (plasma enhancement chemical vapor deposition) grows one deck 2-4 μm of thick PSG (mixing phosphorus glass) mixing Ge (germanium), i.e. waveguide core layer of the present invention, the relative index of refraction of this layer and silicon dioxide substrates is 2.5-3%.
Step 3:
Application LPCVD (low-pressure vapor phase chemogenic deposit) grows one deck amorphous silicon as Hardmask (mask layer) in waveguide core layer;
Application photoetching process (light blockage coating (covering photoresist), exposure, development) generates a layer pattern at mask layer;
Use RIE (reactive ion etching) etching mask layer, form figure thereon, then remove lithography layer;
Application ICP (inductive couple plasma enhancement mode etching system) etching mixes Ge (germanium) PSG layer, by mask layer Graphic transitions on it;
Lift-off mask layer.
Step 4:
PECVD (plasma enhancement chemical vapor deposition) is used to grow the BPSG (boron phosphorus doping glass) of one deck 10-15 μm, i.e. overlayer of the present invention.
Application photoetching process forms figure on BPSG, is then carved by ICP and wears bpsg layer, form cavity, in order to form microchannel, finally remove lithography layer at waveguide core layer sidewall.
Use KOH (potassium hydroxide) or TMAH (Tetramethylammonium hydroxide) solution, through the cavity that upper step is formed, go out microchannel at waveguide core layer wet etching.
As shown in Figure 1, by the waveguide core layer of etching Fig. 1 (b), obtain the structure after the etching shown in Fig. 1 (c), after covering through overlayer, the side of two parts waveguide core on the left side is exposed by further partial etching, use KOH (potassium hydroxide) or TMAH (Tetramethylammonium hydroxide) solution corrosion, form two microchannels that shape and size are controlled, and the waveguide core that side is not exposed on the right is retained, thus finally obtain the controlled microchannel of shape and size and the waveguide core micro-flowmeter device be not on one chip corroded.
Claims (9)
1. the integration processing method of a PLC planar optical waveguide and micro-flowmeter, it is characterized in that, growth substrates on Silicon Wafer matrix, the waveguide core layer of deposited on substrates doping, growth mask layer, generate a layer pattern by photoetching process at mask layer, by dry etching by the Graphic transitions of mask layer to waveguide core layer, after lift-off mask layer, then sedimentary mantle thereon; Figure is formed on the cover layer by photoetching process, etched portions overlayer is until expose the selected sidewall of the waveguide core being processed into microchannel that needs, corrode the waveguide core at this place until form microchannel by KOH solution or tetramethyl ammonium hydroxide solution, thus be not exposed to the outer waveguide core be not corroded and be integrated on one piece of waveguide chip.
2. job operation according to claim 1, is characterized in that, the waveguide core layer of described doping is the waveguide core layer of mixing germanium.
3. job operation according to claim 2, is characterized in that, the waveguide core layer of described doping is for mixing phosphorus glass.
4. job operation according to claim 1 and 2, is characterized in that, the mass concentration of KOH solution is 30-45%.
5. job operation according to claim 1 and 2, is characterized in that, the mass concentration of tetramethyl ammonium hydroxide solution is 20-30%.
6. job operation according to claim 1, is characterized in that, the temperature of corrosion is 60-70 DEG C.
7. the job operation according to any one of claim 1-3, is characterized in that, the waveguide core layer of described doping and the relative index of refraction of substrate are 2.5-3%.
8. job operation according to claim 1 and 2, is characterized in that, described waveguide core layer is Ge-doped SiO
2.
9. job operation according to claim 8, is characterized in that, described overlayer is boron phosphorus doping glassy layer, and described substrate is SiO
2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510340157.3A CN104977654B (en) | 2015-06-18 | 2015-06-18 | A kind of integration processing method of PLC planar optical waveguides and micro-flowmeter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510340157.3A CN104977654B (en) | 2015-06-18 | 2015-06-18 | A kind of integration processing method of PLC planar optical waveguides and micro-flowmeter |
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| Publication Number | Publication Date |
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| CN104977654A true CN104977654A (en) | 2015-10-14 |
| CN104977654B CN104977654B (en) | 2017-11-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510340157.3A Expired - Fee Related CN104977654B (en) | 2015-06-18 | 2015-06-18 | A kind of integration processing method of PLC planar optical waveguides and micro-flowmeter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110703383A (en) * | 2018-07-10 | 2020-01-17 | 采钰科技股份有限公司 | Optical element and method for manufacturing the same |
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| US20060062523A1 (en) * | 2002-05-24 | 2006-03-23 | Guo Lingjie J | Polymer micro-ring resonator device and fabrication method |
| CN101021593A (en) * | 2007-03-16 | 2007-08-22 | 清华大学 | Integrated photon crystal double waveguide back coupling fluid refractive index sensor |
| CN102410991A (en) * | 2011-08-02 | 2012-04-11 | 上海交通大学 | Optical waveguide biochemical sensor and preparation method thereof |
| CN202330264U (en) * | 2011-06-29 | 2012-07-11 | 北京工业大学 | Optical fiber coupling waveguide grating sensor |
| CN103076284A (en) * | 2013-01-28 | 2013-05-01 | 中国科学院半导体研究所 | Fabrication method of optical micro-nano biosensor integrated with microfluidic system |
| CN103762205A (en) * | 2014-01-28 | 2014-04-30 | 华进半导体封装先导技术研发中心有限公司 | Multifunctional base plate based on PCB technology and manufacturing method thereof |
-
2015
- 2015-06-18 CN CN201510340157.3A patent/CN104977654B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060062523A1 (en) * | 2002-05-24 | 2006-03-23 | Guo Lingjie J | Polymer micro-ring resonator device and fabrication method |
| CN101021593A (en) * | 2007-03-16 | 2007-08-22 | 清华大学 | Integrated photon crystal double waveguide back coupling fluid refractive index sensor |
| CN202330264U (en) * | 2011-06-29 | 2012-07-11 | 北京工业大学 | Optical fiber coupling waveguide grating sensor |
| CN102410991A (en) * | 2011-08-02 | 2012-04-11 | 上海交通大学 | Optical waveguide biochemical sensor and preparation method thereof |
| CN103076284A (en) * | 2013-01-28 | 2013-05-01 | 中国科学院半导体研究所 | Fabrication method of optical micro-nano biosensor integrated with microfluidic system |
| CN103762205A (en) * | 2014-01-28 | 2014-04-30 | 华进半导体封装先导技术研发中心有限公司 | Multifunctional base plate based on PCB technology and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110703383A (en) * | 2018-07-10 | 2020-01-17 | 采钰科技股份有限公司 | Optical element and method for manufacturing the same |
| US11590531B2 (en) | 2018-07-10 | 2023-02-28 | Visera Technologies Company Limited | Optical elements |
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| CN104977654B (en) | 2017-11-07 |
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