CN101018042A - Ultra-high frequency low noise amplifier - Google Patents
Ultra-high frequency low noise amplifier Download PDFInfo
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- CN101018042A CN101018042A CN 200710037631 CN200710037631A CN101018042A CN 101018042 A CN101018042 A CN 101018042A CN 200710037631 CN200710037631 CN 200710037631 CN 200710037631 A CN200710037631 A CN 200710037631A CN 101018042 A CN101018042 A CN 101018042A
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- low noise
- noise amplifier
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Abstract
The UHF low-noise amplifier based on Eunyda's FHX13LG comprises: an input matching circuit, the matching circuit between the first and second stage, the matching circuit between the second and third stage, an output matching circuit, and the input module for every stage. This invention optimizes specially in 12.7-13.25GHz, reduces cost half of single microwave IC, and improves performance. The testing results show: product gain 24dB, adding 6dB output attenuation, strip fluctuation 1dB, input return loss over 12dB, NF 1.6-1.8dB, and unconditional stable in full frequency band.
Description
Technical field
The present invention relates to a kind of low noise amplifier, particularly a kind of ultra-high frequency low noise amplifier of transceiver of microwave PDH (Pseudo-synchronous Digital Hierarchy)/synchronous digital hierarchy (PDH/SDH) outdoor unit that is applied to 12.7GHz～13.25GHz.
Background technology
Be applied to the transceiver of microwave PDH (Pseudo-synchronous Digital Hierarchy)/synchronous digital hierarchy (PDH/SDH) outdoor unit of 12.7GHz～13.25GHz, the noiseproof feature of receiver directly has influence on the sensitivity of reception, and the noise of receiver is mainly determined by the noise and the gain of input low noise amplifier.The low noise amplifier of this wave band both can adopt monolithic integrated microwave circuit (MMIC), also can be equipped with special match circuit with high electron mobility field effect transistor (HEMT) and realize.Monolithic integrated microwave circuit (MMIC) is relatively easy, but cost is higher, and performance is not as the latter; For high electron mobility field effect transistor (HEMT), it has two design difficulties, i.e. stability and take into account noise coupling and power match.
Summary of the invention
Technical problem of the present invention is that a kind of unconditional stability in the full range band will be provided, and takes into account the ultra-high frequency low noise amplifier of noise coupling and power match.
In order to solve above technical problem, the invention provides a kind of ultra-high frequency low noise amplifier, it is the three-stage cascade form, is provided with input matching circuit, first and second grade intervalve matching circuit, second and third grade intervalve matching circuit, output matching circuit and Power Entry Module at different levels.
Described input matching circuit is that radio-frequency input signals is successively through transmission line, transition line, open circuit branch line, first order grid power supply and transmission line.Each parameter in this circuit has been done optimization, realized the twoport input coupling of power match simultaneously, because therefore the little band-waveguide transitions of input termination of ultra-high frequency low noise amplifier need not capacitance.
Described first and second grade intervalve matching circuit is that radio-frequency input signals is successively through transmission line, first order drain power, transmission line, capacitance, transmission line, open circuit branch line, second level grid power supply and transmission line.Each parameter in this circuit is done optimization, realized when the input/output terminal while, the rate of doing work was mated the noise factor minimum of ultra-high frequency low noise amplifier.
Described second and third grade intervalve matching circuit is that radio-frequency input signals is successively through transmission line, second level drain power, transmission line, capacitance, third level grid power supply and transmission line.The flatness of maximum gain was an optimization aim when rate of doing work was mated simultaneously with input/output terminal, and each parameter in this circuit has been done optimization.
Described output matching circuit is that radio-frequency input signals is successively through transmission line, third level drain power, open circuit branch line, capacitance, transition line and transmission line.Each parameter in this circuit is done optimization, realized the twoport output coupling of power match simultaneously.
The annexation of described Power Entry Module (being above-mentioned Power Entry Module at different levels) is transmission line, sector, transmission line, circular arc line, transmission line, circular arc line and transmission line.Power Entry Module is supplied with amplifier tube with direct voltage, simultaneously with inband signaling and isolated from power.Each parameter in this circuit has been done optimization, made the band internal impedance of seeing into from port P1 high as far as possible.
The present invention is superior, and effect is: the single-ended low noise amplifier of three-stage cascade (LNA) that the present invention is based on high electron mobility field effect transistor (HEMT), owing to adopted high electron mobility field effect transistor (HEMT), and aiming at 12.7GHz～13.25GH frequency range optimizes, therefore cost only is half of monolithic integrated microwave circuit (MMIC), and performance also improves than monolithic integrated microwave circuit (MMIC).According to the test result of evaluation board, the present invention adds in output that gain is 24dB under the situation of 6dB attenuator, passband fluctuation 1dB, input return loss＞12dB, noise factor 1.6dB～1.8dB, unconditional stability in the full range band.
Description of drawings
Fig. 1 is a schematic block circuit diagram of the present invention;
Fig. 2 is the theory diagram of input matching circuit of the present invention;
Fig. 3 is the theory diagram of first and second grade intervalve matching circuit of the present invention;
Fig. 4 is the theory diagram of second and third grade intervalve matching circuit of the present invention;
Fig. 5 is the theory diagram of output matching circuit of the present invention;
Fig. 6 is the theory diagram of Power Entry Module of the present invention;
Fig. 7 is S parameter testing of the present invention figure as a result;
Fig. 8 is noise testing of the present invention figure as a result.
The number in the figure explanation
1-input matching circuit and Power Entry Module;
First and second grade of 2-intervalve matching circuit and Power Entry Module;
Second and third grade of 3-intervalve matching circuit and Power Entry Module;
4-output matching circuit and Power Entry Module;
5-grid level power supply; The 6-drain power;
The 11-transmission line; The 12-transition line;
The 14-branch line of opening a way; The 16-capacitance;
The 17-sector; The 18-circular arc line;
The 20-amplifier tube.
Embodiment
See also shown in the accompanying drawing, the invention will be further described.
Shown in Fig. 1 schematic block circuit diagram of the present invention, the present invention is an example with the 13GHz frequency range, the parameter of ultra-high frequency low noise amplifier and match circuit thereof, power circuit is as follows: adopt the FHX13LG low noise 20-amplifier tube U101 of Eunyda company, U102, U190 to form the three-stage cascade form, be provided with input matching circuit and Power Entry Module 1, first and second grade intervalve matching circuit and Power Entry Module 2, second and third grade intervalve matching circuit and Power Entry Module 3, output matching circuit and Power Entry Module 4.
Shown in the theory diagram of Fig. 2 input matching circuit of the present invention, input matching circuit of the present invention is that radio-frequency input signals is successively through 11-transmission line TL1, transition line 12,14-open circuit branch line TL3, first order grid power supply 5 and 11-transmission line TL2.As shown in Table 1, each parameter in this circuit has been done optimization, realized the twoport input coupling of power match simultaneously, because therefore the little band-waveguide transitions of input termination of ultra-high frequency low noise amplifier need not capacitance.
| Unit type | Symbol | The parts label | Attribute | Size/parameter |
| Transmission line | MLIN | TL1 | Width | 0.43mm |
| Length | 3.0mm | |||
| Transition line | MTAPER | Taper1 | Input hem width degree | 0.43mm |
| Output hem width degree | 0.50mm | |||
| Length | 0.5mm | |||
| Stauros | MCROSO | CROS2 | Input hem width degree | 0.50mm |
| Following width | 0.10mm | |||
| Output hem width degree | 0.50mm | |||
| The top width | 0.50mm | |||
| The open circuit branch line | MLOC | TL3 | Width | 0.50mm |
| Length | 1.9mm | |||
| Transmission line | MLIN | TL2 | Width | 0.50mm |
| Length | 0.95mm | |||
| Power supply feed-in module | TRX_LNA_13_Bias | B1 | See the appropriate section introduction for details | |
Table one
Shown in the theory diagram of Fig. 3 first and second grade intervalve matching circuit of the present invention, first and second grade intervalve matching circuit of the present invention is that radio-frequency input signals is successively through 11-transmission line TL1, first order drain power 6,11-transmission line TL2,16-capacitance C110,11-transmission line TL3,14-open circuit branch line TL5, second level grid power supply 5 and 11-transmission line TL4.As shown in Table 2, each parameter in this circuit is done optimization, realized when the input/output terminal while, the rate of doing work was mated the noise factor minimum of ultra-high frequency low noise amplifier.
| Unit type | Symbol | The parts label | Attribute | Size/parameter |
| Transmission line | MLIN | TL1 | Width | 0.50mm |
| Length | 1.4mm | |||
| T shape knot | MTEE_ADS | Tee1 | Input hem width degree | 0.50mm |
| Output hem width degree | 0.50mm | |||
| The top width | 0.10mm | |||
| Transmission line | MLIN | TL2 | Width | 0.50mm |
| Length | 2.6mm | |||
| Capacitance | ATC600L | C110 | The appearance value | 0.5pF |
| Transmission line | MLIN | TL3 | Width | 0.50mm |
| Length | 2.6mm | |||
| Stauros | MCROSO | CROS1 | Input hem width degree | 0.50mm |
| Following width | 0.10mm | |||
| Output hem width degree | 0.50mm | |||
| The top width | 0.20mm | |||
| The open circuit branch line | MLOC | TL5 | Width | 0.20mm |
| Length | 2.7mm | |||
| Transmission line | MLIN | TL4 | Width | 0.50mm |
| Length | 1.4mm | |||
| Power supply feed-in module | TRX_LNA_13_Bias | B1 | See the appropriate section introduction for details | |
| B2 | ||||
Table two
Shown in the theory diagram of Fig. 4 second and third grade intervalve matching circuit of the present invention, second and third grade intervalve matching circuit of the present invention is that radio-frequency input signals is successively through 11-transmission line Tl1, second level drain power 6,11-transmission line TL2,16-capacitance C111, third level grid power supply 5 and 11-transmission line TL3.The flatness of maximum gain was an optimization aim when rate of doing work was mated simultaneously with input/output terminal, each parameter in this circuit had been done optimization, as shown in Table 3.
| Unit type | Symbol | The parts label | Attribute | Size/parameter |
| Transmission line | MLIN | TL1 | Width | 0.50mm |
| Length | 1.4mm | |||
| T shape knot | MTEE_ADS | Tee1 | Input hem width degree | 0.50mm |
| Output hem width degree | 0.50mm | |||
| The top width | 0.10mm | |||
| Transmission line | MLIN | TL2 | Width | 0.50mm |
| Length | 4.0mm | |||
| Capacitance | ATC600L | C111 | The appearance value | 0.5pF |
| T shape knot | MTEE_ADS | Tee1 | Input hem width degree | 0.50mm |
| Output hem width degree | 0.50mm | |||
| Following width | 0.10mm | |||
| Transmission line | MLIN | TL3 | Width | 0.50mm |
| Length | 1.4mm | |||
| Power supply feed-in module | TRX_LNA_13_Bias | B1 | See the appropriate section introduction for details | |
| B2 | ||||
Table three
Shown in the theory diagram of Fig. 5 output matching circuit of the present invention, output matching circuit of the present invention is that radio-frequency input signals is successively through 11-transmission line TL1, third level drain power 6,14-open circuit branch line TL2,16-capacitance C196, transition line 12 and 13-transmission line TL3.As shown in Table 4, each parameter in this circuit is done optimization, realized the twoport output coupling of power match simultaneously.
| Unit type | Symbol | The parts label | Attribute | Size |
| Transmission line | MLIN | TL1 | Width | 0.50mm |
| Length | 0.9mm | |||
| Stauros | MCROSO | CROS1 | Input hem width degree | 0.50mm |
| Following width | 0.20mm | |||
| Output hem width degree | 0.50mm | |||
| The top width | 0.10mm | |||
| The open circuit branch line | MLOC | TL2 | Width | 0.20mm |
| Length | 2.5mm | |||
| Capacitance | ATC600L | C196 | The appearance value | 0.5pF |
| Transition line | MTAPER | Taper1 | Input hem width degree | 0.43mm |
| Output hem width degree | 0.50mm | |||
| Length | 0.5mm | |||
| Transmission line | MLIN | TL3 | Width | 0.43mm |
| Length | 3.0mm | |||
| Power supply feed-in module | TRX_LNA_13_Bias | B1 | See the appropriate section introduction for details | |
Table four
Shown in the theory diagram of Fig. 6 Power Entry Module of the present invention, the annexation of Power Entry Module of the present invention is 11-transmission line TL1, sector 17,11-transmission line TL2,18-circular arc line Curve1,11-transmission line TL3,18-circular arc line Curve2 and 11-transmission line TL4.Power Entry Module is supplied with amplifier tube 20 with direct voltage, simultaneously with inband signaling and isolated from power.As shown in Table 5, each parameter in this circuit has been done optimization, made the band internal impedance of seeing into from port P1 high as far as possible.
| Unit type | Symbol | The parts label | Attribute | Size |
| Transmission line | MLIN | TL1 | Width | 0.10mm |
| Length | 3.85mm | |||
| T shape knot | MTEE_ADS | Tee3 | Input hem width degree | 0.10mm |
| Output hem width degree | 0.10mm | |||
| The top width | 0.10mm | |||
| Sector | MRSTUB | STUB1 | Input hem width degree | 0.10mm |
| The length of side | 2.1mm | |||
| Angle | 70° | |||
| Transmission line | MLIN | TL2 | Width | 0.10mm |
| Length | 0.05mm | |||
| Circular arc line | MCURVE2 | Curve1 | Width | 0.10mm |
| Angle | 90° | |||
| Radius | 1.0mm | |||
| Transmission line | MLIN | TL3 | Width | 0.10mm |
| Length | 0.6mm | |||
| Circular arc line | MCURVE2 | Curve1 | Width | 0.10mm |
| Angle | 90° | |||
| Radius | 2.0mm | |||
| The size sudden change | MSTEP | Step2 | Simulation model, no actual size correspondence | |
| Transmission line | MLIN | TL4 | Width | 0.80mm |
| Length | 0.5mm | |||
Table five
Adopted FHX13LG low noise 20-amplifier tube U101, U102, the U190 of Eunyda company among the present invention, its circuit size is: package edge is 0.2mm to the distance of nearest via hole, and via diameter is 0.3mm; Two source lead link to each other, and add a via hole in the middle of them, to reduce the influence of source circuit ghost effect.
For verifying practicality of the present invention, made evaluation board, the input of evaluation board has adopted waveguide-microstrip transitions, and output has added the 6dB attenuator.,, fluctuate as a result shown in the figure as Fig. 7 S parameter testing of the present invention less than 1dB according to the about 24dB of gain in the testing evaluation strip; Input return loss satisfies requirement of actual application greater than 12dB., add at output under the situation of 6dB attenuator as a result shown in the figure as Fig. 8 noise testing of the present invention, the noise factor of ultra-high frequency low noise amplifier is 1.6dB～1.8dB, satisfies the index request of practical application, has realized the unconditional stability of full range band.
Claims (6)
1, a kind of ultra-high frequency low noise amplifier, it is characterized in that: amplifier is the three-stage cascade form, is provided with input matching circuit, first and second grade intervalve matching circuit, second and third grade intervalve matching circuit, output matching circuit and Power Entry Module at different levels.
2, by the described a kind of ultra-high frequency low noise amplifier of claim 1, it is characterized in that: described input matching circuit is that radio-frequency input signals is successively through transmission line, transition line, open circuit branch line, first order grid power supply and transmission line.
3, by the described a kind of ultra-high frequency low noise amplifier of claim 1, it is characterized in that: described first and second grade intervalve matching circuit is that radio-frequency input signals is successively through transmission line, first order drain power, transmission line, capacitance, transmission line, open circuit branch line, second level grid power supply and transmission line.
4, by the described a kind of ultra-high frequency low noise amplifier of claim 1, it is characterized in that: described second and third grade intervalve matching circuit is that radio-frequency input signals is successively through transmission line, second level drain power, transmission line, capacitance, third level grid power supply and transmission line.
5, by the described a kind of ultra-high frequency low noise amplifier of claim 1, it is characterized in that: described output matching circuit is that radio-frequency input signals is successively through transmission line, third level drain power, open circuit branch line, capacitance, transition line and transmission line.
6, by the described a kind of ultra-high frequency low noise amplifier of claim 1, it is characterized in that: the annexation of described Power Entry Module is transmission line, sector, transmission line, circular arc line, transmission line, circular arc line and transmission line.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710037631 CN100557958C (en) | 2007-02-16 | 2007-02-16 | Ultra-high frequency low noise amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710037631 CN100557958C (en) | 2007-02-16 | 2007-02-16 | Ultra-high frequency low noise amplifier |
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| Publication Number | Publication Date |
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| CN101018042A true CN101018042A (en) | 2007-08-15 |
| CN100557958C CN100557958C (en) | 2009-11-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710037631 Expired - Fee Related CN100557958C (en) | 2007-02-16 | 2007-02-16 | Ultra-high frequency low noise amplifier |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104333334A (en) * | 2014-10-08 | 2015-02-04 | 中国电子科技集团公司第五十四研究所 | Broadband and low-noise radio frequency amplifier of satellite navigation aviation enhancing system and transmission device |
| CN111933707A (en) * | 2020-07-13 | 2020-11-13 | 华中科技大学 | Heterojunction Bipolar Transistor (HBT) and low-noise amplifier comprising HBT |
-
2007
- 2007-02-16 CN CN 200710037631 patent/CN100557958C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104333334A (en) * | 2014-10-08 | 2015-02-04 | 中国电子科技集团公司第五十四研究所 | Broadband and low-noise radio frequency amplifier of satellite navigation aviation enhancing system and transmission device |
| CN104333334B (en) * | 2014-10-08 | 2017-09-26 | 中国电子科技集团公司第五十四研究所 | Satellite navigation aviation strengthening system broadband low noise radio frequency amplifier and transmitting device |
| CN111933707A (en) * | 2020-07-13 | 2020-11-13 | 华中科技大学 | Heterojunction Bipolar Transistor (HBT) and low-noise amplifier comprising HBT |
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| Publication number | Publication date |
|---|---|
| CN100557958C (en) | 2009-11-04 |
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Granted publication date: 20091104 Termination date: 20190216 |