CN101009206A - Apparatus for treating substrates and method of treating substrates - Google Patents
Apparatus for treating substrates and method of treating substrates Download PDFInfo
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- CN101009206A CN101009206A CNA2007100020772A CN200710002077A CN101009206A CN 101009206 A CN101009206 A CN 101009206A CN A2007100020772 A CNA2007100020772 A CN A2007100020772A CN 200710002077 A CN200710002077 A CN 200710002077A CN 101009206 A CN101009206 A CN 101009206A
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- sulfuric acid
- aquae hydrogenii
- hydrogenii dioxidi
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Abstract
The invention provides a substrate processing device capable of effectively and reliable removing anticorrosive agent provided on the semiconductor wafer. The substrate processing device has a revolving stand (3) for keeping the semiconductor wafer; and a nozzle body (33) arranged opposite to the semiconductor wafer kept by the revolving stand for mixing sulphuric acid and hydrogen peroxide water to supply to the substrate; the nozzle body has a longer body part (34) along radius direction of the substrate; a first and second supply liquid tubes (37, 38) for supplying the sulphuric acid and hydrogen peroxide water to the body part; a first slit, a second slit and curved surface (41, 42, 39), mixing the sulphuric acid and hydrogen peroxide water supplied by the first and second supply liquid tubes (37, 38) to supply from the body part to the almost whole radius direction of the semiconductor wafer.
Description
Technical field
The present invention relates to usefulness and mixed substrate board treatment and the substrate processing method using same that the treatment fluid of sulfuric acid and aquae hydrogenii dioxidi is handled the resist that is located on the substrate.
Background technology
For example, in the manufacturing process of liquid crystal indicator or semiconductor device, be useful on the film formation process or the photo-mask process that form circuitous pattern on the substrate of glass substrate at rectangle, semiconductor wafer etc.In these operations, remove the resist that is located on the substrate, the operation of after removing, cleaning.
The processing unit that utilization has the spin mode of the rotating platform that makes the substrate rotation carries out such processing.Treatment fluid when removing the resist that is located on the substrate uses the sulfuric acid aquae hydrogenii dioxidi that is called SPM that has mixed aquae hydrogenii dioxidi in sulfuric acid, uses the cleaning fluid that is called SC-1 that has mixed ammoniacal liquor in aquae hydrogenii dioxidi in the cleaning after removing.
, when removing the resist that is located on the substrate, be pre-mixed after sulfuric acid and the aquae hydrogenii dioxidi in the past, supplied with to the injection nozzle of the rotating platform top that is configured in processing unit with for example mixing valve or mixing channel etc.The treatment fluid that is supplied to injection nozzle sprays to the radial center portion of substrate.
Thus, the centrifugal force that the rotation by substrate causes, treatment fluid flows to the outside from the radial center portion of substrate, so treatment fluid arrives the whole surface of substrate, can remove the resist on the plate face that is located at this substrate.Such prior art for example is disclosed at patent documentation 1.
Patent documentation 1: TOHKEMY 2005-39205 communique
The mixed liquor that use has mixed sulfuric acid and aquae hydrogenii dioxidi is the principle that SPM removes resist, the known persulfuric acid (H that produces when mixing sulfuric acid and aquae hydrogenii dioxidi that utilized
2SO
5) effect.
But, exist the life-span (Life Span) very short by what mix that persulfuric acid that sulfuric acid and aquae hydrogenii dioxidi produce keeps its activated state after generation.That is, the time that can keep activated state is short, so lose activity at short notice.
Therefore, if after mixing valve (Mixing Valve) or mixing channel etc. have mixed sulfuric acid and aquae hydrogenii dioxidi, supply with injection nozzle, need the time from mixing the back to supplying to substrate, losing activity during this period by mixing the persulfuric acid that sulfuric acid and aquae hydrogenii dioxidi produce, can not be effectively and remove the resist that is located on the substrate reliably.
As the effect of removing resist from aforesaid substrate, except the effect of the persulfuric acid that mixes sulfuric acid and hydrogen peroxide water generates, also have the influence of the heat that produces because of mixing, the temperature at known treatment night is high more, and then the ability of removing of resist is also high more.
But, supply with treatment fluid to the radial center portion of substrate, utilize the centrifugal force that produces by the rotation of substrate to make this treatment fluid when radius vector flows to the outside from central division, can't avoid treatment fluid along with flowing to the problem that its temperature of radial outside also reduces.Therefore, can not make progress in whole footpath and substrate be handled, so can produce the processing deviation with uniform treatment fluid.
Summary of the invention
The invention provides a kind of substrate board treatment and substrate processing method using same, before will supplying to substrate, mix sulfuric acid and aquae hydrogenii dioxidi and become and handle night, upwards supply with in the almost whole footpath of substrate.Thus, if mixed sulfuric acid and aquae hydrogenii dioxidi, can kept its activated state during with the treatment fluid supplying substrate, and, can upwards not produce the supply of temperature difference ground in the footpath of substrate.
Substrate board treatment of the present invention is handled the resist film that is located on the substrate, and this substrate board treatment possesses: the rotating platform that keeps aforesaid substrate; And nozzle body, with the substrate that is kept by this rotating platform configuration opposed to each other mutually, mix sulfuric acid and aquae hydrogenii dioxidi and supply with aforesaid substrate; The said nozzle body possesses: body, and longer along the radial direction of aforesaid substrate; The first soup feed mechanism is supplied with above-mentioned sulfuric acid and aquae hydrogenii dioxidi to this body; And the second soup feed mechanism, mix sulfuric acid and the aquae hydrogenii dioxidi supplied with to above-mentioned body by this first soup feed mechanism, supply with to the almost entire radius direction of aforesaid substrate from above-mentioned body.
Substrate processing method using same of the present invention utilizes the treatment fluid that has mixed sulfuric acid and aquae hydrogenii dioxidi that the resist film that is located on the substrate is handled, and it comprises: the operation that keeps aforesaid substrate on rotating platform; Above aforesaid substrate, mix the operation that sulfuric acid and aquae hydrogenii dioxidi are made treatment fluid; And the operation of on the almost entire radius direction of the aforesaid substrate that rotates by above-mentioned rotating platform, supplying with above-mentioned treatment fluid.
Another kind of substrate board treatment of the present invention is handled the resist film that is located on the substrate, and this substrate board treatment possesses: the rotating platform that keeps aforesaid substrate; First two-fluid spray nozzle is configured in the top of above-mentioned rotating platform, with gas-pressurized the sulfuric acid pressurization is become and sprays after vaporific; And second two-fluid spray nozzle, be configured in the top of above-mentioned rotating platform, with gas-pressurized the aquae hydrogenii dioxidi pressurization is become and spray after vaporific; To before arriving substrate, mix, and supply with aforesaid substrate from the vaporific sulfuric acid of above-mentioned first two-fluid spray nozzle injection and the vaporific aquae hydrogenii dioxidi that sprays from above-mentioned second two-fluid spray nozzle.
The invention effect
According to this invention, with substrate mutually opposed to each other configuration have along the radial direction of the substrate nozzle body of long body, mix after sulfuric acid and aquae hydrogenii dioxidi supplied to this body, and on the roughly whole length of the radial direction of substrate, supply with the treatment fluid that mixes.
Therefore, can mix sulfuric acid and aquae hydrogenii dioxidi and supplying substrate before losing activity, and supply with to the entire radius direction of substrate from the said nozzle body,, can effectively and carry out the processing of substrate equably so treatment fluid does not produce temperature difference on the radial direction of substrate.
In addition, among the present invention, spray respectively, before arriving substrate after the injection, mix and supplying substrate, therefore, can shorten from mixing the time till sulfuric acid and aquae hydrogenii dioxidi play supplying substrate with vaporific injected sulfuric acid and aquae hydrogenii dioxidi.
Thus, can be under not losing because of the situation of the activity of mixing the persulfuric acid that sulfuric acid and aquae hydrogenii dioxidi produce supplying substrate, so, can remove the resist film that is located on the substrate reliably.
Description of drawings
Fig. 1 is the profile of schematic configuration of the spin processing unit of expression first execution mode of the present invention.
Fig. 2 is the end view of nozzle body.
Fig. 3 is the enlarged elevation figure of nozzle body shown in Figure 2.
Fig. 4 is the end view of the nozzle body of expression second execution mode of the present invention.
Fig. 5 is the enlarged elevation figure of nozzle body shown in Figure 4.
Fig. 6 is the profile of schematic configuration of the spin processing unit of expression the 3rd execution mode of the present invention.
Fig. 7 is the piping diagram of first two-fluid spray nozzle to the, three two-fluid spray nozzles shown in Figure 6.
Embodiment
Below, with reference to the description of drawings embodiments of the present invention.
Fig. 1 to Fig. 3 is first execution mode of the present invention, and Fig. 1 represents the spin processing unit as processing unit.This spin processing unit has lid 1.In the bottom of this lid 1, upwards be connected with a plurality of discharge pipes 2 with predetermined distance in week.Each discharge pipe 2 is communicated with not shown exhaust pump.
In addition, above-mentioned lid 1 has lower cover 1a and loam cake 1b, and loam cake 1b can be driven at above-below direction by not shown driving mechanisms such as cylinder.
In above-mentioned lid 1, be provided with rotating platform 3.Periphery at the upper surface of this rotating platform 3 upwards rotatably is provided with a plurality of support units 4 with predetermined distance in week.The position from the pivot off-centre of support unit 4 in the upper surface of each support unit 4 is being provided with the holding pin 5 that for example has the stage portion that is made of inclined plane etc.
Semiconductor wafer W as substrate is fed into above-mentioned rotating platform 3 with card state up.That is, the lower surface of circumference that is fed into the semiconductor wafer W of rotating platform 3 engages with the stage portion of above-mentioned clamping section 5.When above-mentioned support unit 4 was rotated, above-mentioned holding pin 5 eccentric rotations were so kept the circumference of semiconductor wafer W.
In addition and since holding pin 5 by not shown spring to the direction of rotation that keeps semiconductor wafer W by the application of force, rotate by the power that applies that makes support unit 4 resist above-mentioned spring, can remove the hold mode of semiconductor wafer W.
Above-mentioned rotating platform 3 is rotated driving by control motor 11.In this control motor 11, in the stator 12 of tubular, rotatably be inserted with the rotor 13 that is similarly tubular, on this rotor 13, linked above-mentioned rotating platform 3 by power transmission member 3a.
Rotation by the above-mentioned control motor 11 of control device 14 controls.Thus, by above-mentioned control device 14 above-mentioned rotating platform 3 is rotated with the regulation rotating speed.
Be connected with the fixed axis 15 of tubular in above-mentioned rotor 13 interpolations.Be provided with the nozzle head 16 of the upper surface side that is positioned at above-mentioned rotating platform 3 in the upper end of this fixed axis 15.That is, nozzle head 16 is configured to not the state with rotating platform 3 rotations.On this nozzle head 16, be provided with injection as first lower nozzle body 17 of the etching solution of treatment fluid and the second lower nozzle body 18 of jet cleaning liquid.
Thus, can be from above-mentioned lower nozzle body 17,18 middle body towards the lower surface that is rotated the semiconductor wafer W that platform 3 keeps inject process liquid and flushing liquor selectively.That is, can carry out etching and flushing processing to the lower surface of semiconductor wafer W.
The upper surface side of above-mentioned rotating platform 13 is prevented to cover 19 by turbulent flow and covers.This turbulent flow prevents to cover 19 and can prevent from the lower face side that is rotated the semiconductor wafer W that platform 3 keeps turbulent flow to take place, and the part opening is formed with and can sees through hole 20 to what the lower surface of semiconductor wafer W sprayed etching solution and cleaning fluid from above-mentioned each nozzle body 17,18 in the central.
Be provided with arm body 25 as driving mechanism in the side of above-mentioned lid 1.This arm body 25 has vertical component effect 26 and horizontal part 17, and the upper end of the base end part of this horizontal part 17 and this vertical component effect 26 links.The lower end of above-mentioned vertical component effect 26 and rotation motor 28 are linking.Rotation motor 28 can be rotated driving with predetermined angular to arm body 25 in the horizontal direction.
Above-mentioned rotation motor 28 is installed on the movable platen 29, and this movable platen 29 is configured to can slide at above-below direction by not shown line slideway.This movable platen 29 is driven at above-below direction by driving cylinder 31 up and down.
Leading section at the horizontal part 27 of above-mentioned arm body 25 is linking nozzle body 33 by installation component 32, and this nozzle body 33 can be positioned on the opposed position of upper surface with the semiconductor wafer W that is kept by above-mentioned rotating platform 3.This nozzle body 33 has the body 34 with the roughly the same length dimension of the radius size of above-mentioned semiconductor wafer W as shown in Figures 2 and 3, and an end upper surface of the length direction of this body 34 is attached on the leading section of above-mentioned horizontal part 27 by above-mentioned installation component 32.
As shown in Figure 3, in length direction Width one end midway of the upper surface of above-mentioned body 34, opening is formed with the first feed flow hole 35, is formed with the second feed flow hole 36 at the other end opening.In the above-mentioned first feed flow hole 35, connect first feed pipe 37 of supplying with sulfuric acid, in the above-mentioned second feed flow hole 36, connecting second feed pipe 38 of supplying with aquae hydrogenii dioxidi by joint 38a by joint 37a.Above-mentioned first feed pipe 37 and second feed pipe 38 constitute the first soup feed mechanism of the present invention.
The one side 34a and the another side 34b of the Width of above-mentioned body 34, the circular-arc curved surface 39 that forms by the lower end at this body 34 is connecting.In the upper end of an above-mentioned side 34a, on the whole length of length direction, be formed with first slit 41.In the upper end of above-mentioned another side 34b, on the whole length of length direction, be formed with second slit 42.
The above-mentioned first feed flow hole 35 is communicated with above-mentioned first slit 41, and the above-mentioned second feed flow hole 36 is communicated with above-mentioned second slit 42.Constitute and will mix as described later to the first feed flow hole 35 of above-mentioned body 34, sulfuric acid and the aquae hydrogenii dioxidi that the second feed flow hole 36 is supplied with by above-mentioned first slit 41 and second slit 42 and above-mentioned curved surface 39 from above-mentioned first feed pipe 37 and second feed pipe 38, and the second soup feed mechanism of supplying with to above-mentioned semiconductor wafer W.
Upper surface at above-mentioned body 34 is provided with oscillator 45 as shown in Figures 2 and 3.This oscillator 45 carries out ultrasonic vibration by the High frequency power of illustrated supersonic generator supply never.That is, body 34 carries out ultrasonic vibration by oscillator 45.When body 34 carries out ultrasonic vibration, pay ultrasonic vibration to mixing sulfuric acid and the aquae hydrogenii dioxidi supplied with to above-mentioned semiconductor wafer W from this body 34.
Then, effect when the spin processing unit that utilizes said structure is removed resist on the upper surface that is located at semiconductor wafer W is described.
At first, supply with the semiconductor wafer W that is provided with resist, and keep by support unit 4 to the upper surface of rotating platform 3.Then, actuating arm body 25 is located the nozzle body 33 that is located at the front end of this horizontal part 27 with respect to the upper surface of semiconductor wafer W.Promptly, make an end of the length direction of nozzle body 33 be positioned at the central part radially of semiconductor wafer W, make length direction radially along semiconductor wafer W, and, with curved surface be that the summit is positioned to bottom, have some compartment of terrains with the upper surface of semiconductor wafer W and separate opposed.
In addition, during left-hand tools platform 3 semiconductor supply wafer W, said nozzle body 33 is waited in the position of keeping out of the way above lid 1.
If said nozzle body 33 is positioned at the top of semiconductor wafer W, Yi Bian then make rotating platform 3 rotations, Yi Bian supply with sulfuric acid, supply with aquae hydrogenii dioxidi to second feed pipe 38 to first feed pipe 37.
The sulfuric acid of supplying with to first feed pipe 37 flows to first slit 41 from the first feed flow hole 35, flows out from the whole length of above-mentioned first slit 41, flows to the below along a side 34a of the body 34 of nozzle body 33.
The aquae hydrogenii dioxidi of supplying with to second feed pipe 38 flows to second slit 42 from the second feed flow hole 36, flows out from the whole length of this second slit 42, flows to the below along another side 34b of the body 34 of nozzle body 33.
The sulfuric acid and the aquae hydrogenii dioxidi that flow to the below along side 34a and another side 34b of above-mentioned body 34, the curved surface 39 that forms along the bottom at body 34 flows, thereby, when the summit bottom that becomes this curved surface 39 mixes to treatment fluid, on the whole length of the radial direction of the upper surface of semiconductor wafer W, become slit-shaped to flow out.Represent along an above-mentioned side 34a and the sulfuric acid of another side 34b and the flow direction of aquae hydrogenii dioxidi with arrow at Fig. 3.
Semiconductor wafer W is by rotating platform 3 rotations.Therefore, treatment fluid is fed into the entire upper surface of semiconductor wafer W, is stripped from processing so be located at the resist of the upper surface of semiconductor wafer W.
Be fed into the sulfuric acid and the aquae hydrogenii dioxidi of nozzle body 33, when the curved surface 39 of body 34 bottoms that are formed at nozzle body 33 mixes to treatment fluid, be fed into the upper surface of semiconductor wafer W.Therefore, treatment fluid was fed into semiconductor wafer W before losing because of the activity of mixing the persulfuric acid that sulfuric acid and aquae hydrogenii dioxidi produce, and can utilize the peeling off of resist of above-mentioned treatment fluid reliably.
At this moment, if, make body 34 carry out ultrasonic vibration, then can more effectively utilize the peeling off of resist of above-mentioned treatment fluid to oscillator 45 energisings that are provided with at the upper surface of body 34.
Above-mentioned treatment fluid is supplied with simultaneously from the curved surface 39 of the body 34 of nozzle body 33 on the whole length of the radial direction of semiconductor wafer W.That is, by mixing the treatment fluid that sulfuric acid and aquae hydrogenii dioxidi rise because of the reaction heat temperature, the lower end from the curved surface 39 of above-mentioned body 34 is supplied with simultaneously on the entire radius direction of semiconductor wafer W.
Therefore, the treatment fluid that is fed into semiconductor wafer W does not produce temperature difference at the radial direction of this semiconductor wafer W, so the treatment fluid of the enough roughly the same temperature of energy is handled the whole surface of semiconductor wafer W.Its result, it is different and the processing deviation that causes can be carried out the processing of semiconductor wafer W equably can not produce temperature.
That is, according to this execution mode, can be before losing because of the activity of mixing the persulfuric acid that sulfuric acid and aquae hydrogenii dioxidi produce process semiconductor wafers W.And, can utilize the treatment fluid that does not have temperature difference that the entire upper surface of semiconductor wafer W is handled.Therefore, by above-mentioned formation, can be evenly and the entire upper surface of process semiconductor wafers W reliably.
Fig. 4 and Fig. 5 represent second execution mode of the present invention.This execution mode is that the bottom of the body 34A of nozzle body 33A forms the width dimensions narrow 50 littler than other parts.On the roughly total length of the length direction of this narrow 50, be formed with liquid feeding channel 51.
On above-mentioned body 34A, be formed with a plurality of first feed flow holes 52 at length direction with predetermined distance, an end in this first feed flow hole 52 is in the upper surface open of body 34A, and the other end is communicated with above-mentioned liquid feeding channel 51.Moreover, on body 34A, being formed with a plurality of second feed flow holes 53 (Fig. 5 only illustrates) with predetermined distance at length direction, an end in this second feed flow hole 53 is at the side opening of body 34A, and the other end is communicated with above-mentioned liquid feeding channel 51.
In the above-mentioned first feed flow hole 52, connecting first feed pipe 54 of supplying with sulfuric acid, in the above-mentioned second feed flow hole 53, connecting second feed pipe 55 of supplying with aquae hydrogenii dioxidi by joint 55a by joint 54a.Moreover, be formed with a plurality of supply holes 56 that an end is communicated with above-mentioned liquid feeding channel 51 at curved surface 39 upper sheds that are formed at the lower end and the other end on above-mentioned body 34A, these a plurality of supply holes 56 are that the length direction at above-mentioned body 34 has predetermined distance and is that the center has equal angular three supply holes 56 with the vertical line at Width.
The nozzle body 33A of said structure is identical with first execution mode, is installed in the front end of the horizontal part 27 of arm body 25, along the radial direction configuration opposed to each other mutually of the upper surface that is rotated the semiconductor wafer W that platform 3 keeps.
Under this state, supply with sulfuric acid to liquid feeding channel 51, supply with aquae hydrogenii dioxidi to liquid feeding channel 51 from second feed pipe 55 from first feed pipe 54.Sulfuric acid and aquae hydrogenii dioxidi are mixed into treatment fluid at above-mentioned liquid feeding channel 51, because of the reaction heat temperature rises, are fed into the upper surface of semiconductor wafer W from a plurality of supply holes 56 that are communicated with above-mentioned liquid feeding channel 51 shown in the arrow of Fig. 5.
In this second execution mode, sulfuric acid and aquae hydrogenii dioxidi are fed into semiconductor wafer W from supply hole 56 immediately after the liquid feeding channel 51 of nozzle body 33A is mixed into treatment fluid.That is, treatment fluid supplied to semiconductor wafer W before losing by the activity of mixing the persulfuric acid that sulfuric acid and aquae hydrogenii dioxidi produce, so can be rapidly and utilize the processing of the semiconductor wafer W of treatment fluid reliably.
And treatment fluid is supplied with to the whole length of the radial direction of semiconductor wafer W simultaneously from the body 34A of nozzle body 33A.So, cause the treatment fluid that temperature rises because of mixing the reaction heat that sulfuric acid and aquae hydrogenii dioxidi produce, supply with to the radial direction of semiconductor wafer W with roughly the same temperature, therefore, can be with the treatment fluid of the uniform temp entire upper surface of process semiconductor wafers W equably.
Fig. 6 and Fig. 7 represent the 3rd execution mode of the present invention.Fig. 6 represents the spin processing unit as processing unit, and this spin processing unit has treatment trough 101.In this treatment trough 101, dispose lid 102.This lid 102 comprises: lower cover 103 is located on the base plate of above-mentioned treatment trough 101; With loam cake 104, be arranged to move up and down with respect to this lower cover 103 by not shown driving mechanism up and down.
On the diapire of above-mentioned lower cover 103, upwards connecting a plurality of discharge pipes 105 with predetermined distance in week.These discharge pipes 105 are being communicated with exhaust pump 106.Can stop and rotating speed by the startup of control device 107 these exhaust pumps 106 of control.
Lower face side at above-mentioned lid 102 has disposed base plate 108.On this base plate 108, be formed with installing hole 109 in position corresponding to above-mentioned lower cover 103.In this installing hole 109, embed the upper end of the stator 112 of fixing the control motor 111 that constitutes drive source.
Said stator 112 constitutes tubular, and portion can rotate freely the ground intercalation and the rotor 113 that is similarly tubular within it.And the startup of controlling above-mentioned control motor 111 as described later by above-mentioned control device 107 stops and rotating speed.
Be fixed with the union body 114 of tubular in the upper surface of above-mentioned rotor 113, the lower surface of this union body 114 contacts with the upper surface of above-mentioned rotor 113 with being integral.Be formed with the diameter large diameter blade of a sword portion 115 bigger than the internal diameter size of said stator 112 in the lower end of this union body 114.This blade of a sword portion 115 is contacting slidably with the upper surface of said stator 112, thus, need not stop the rotation of rotor 113, just can prevent that this rotor 113 breaks away from from stator 112.
The part corresponding with above-mentioned rotor 113 at above-mentioned lower cover 103 forms through hole 103a, and above-mentioned union body 114 is projected in the lid 102 from above-mentioned through hole 103a.In the upper end of this union body 114 rotating platform 116 is installed.At the periphery of this rotating platform 116, making progress in week with predetermined distance, be interval with 6 (only illustrating 2) columned holding members 117 with 60 degree in the present embodiment, this holding member 117 can be driven in rotation by not shown driving mechanism.
In the upper surface of above-mentioned holding member 117, be provided with fulcrum post 118 in the position of the pivot that departs from this holding member 117 with conical surface.To the semiconductor wafer W of rotating platform 116 supplies, the lower surface of the circumference of semiconductor wafer W is connected on the conical surface of above-mentioned fulcrum post 118 as substrate.If make 117 rotations of above-mentioned holding member under this state, then fulcrum post 118 eccentric rotations are so the clamping force of semiconductor wafer W by above-mentioned fulcrum post 118 that is fed on the rotating platform 116 is held.
In addition, the clamping force of 118 pairs of above-mentioned semiconductor wafer W of fulcrum post can be set according to the eccentric anglec of rotation of the above-mentioned holding member 117 that is undertaken by above-mentioned driving mechanism.In addition, be to utilize spring force to make under the situation of holding member 117 eccentric structures of rotating at driving mechanism, can adjust clamping force according to the intensity of this spring.
Above-mentioned rotating platform 116 is prevented to cover 121 by turbulent flow and is covered with.This turbulent flow prevents to cover 121 and has the upper wall 123 of the periphery wall 122 and the covering upper surface of the outer peripheral face that covers above-mentioned rotating platform 116, and the upside of above-mentioned periphery wall 122 forms minor diameter 122a, downside forms large-diameter portion 122b.When rotating platform 116 rotations, this turbulent flow prevents to cover 121 and prevents to produce turbulent flow at the upper surface of this rotating platform 116.The upper surface open of above-mentioned loam cake 104, side face is provided with endless member 125 within it.
When above-mentioned rotating platform 116 is supplied with untreated semiconductor wafer W or taken out the semiconductor wafer W of having handled that is supplied to, above-mentioned loam cake 104 descends as described later.
Top wall at above-mentioned treatment trough 101 is formed with peristome 131.Be provided with fan and the filter unit 132 of ULPA, HEPA etc. at peristome 131.Air in this fan and filter unit 132 are used between further Cress also imports in the treatment trough 101, and the import volume of this clean air is to be determined by the drive division 133 of above-mentioned control device 107 control said fans and filter unit 132.That is, control the rotating speed of the fan (not shown) of fans and filter unit 132 by above-mentioned drive division 133, thereby can control the quantity delivered of the clean air in treatment trough 101.
Side opening at above-mentioned treatment trough 101 is formed with gateway 134.This gateway 134 is opened and closed by shutter 135, and this shutter 135 is located at a side of treatment trough 101, can slide at above-below direction.This shutter 135 is driven by the cylinder 136 with compressed air acts.That is, on above-mentioned cylinder 136, be provided with the compressed-air actuated mobile control valve 137 of control, carry out switching controls by 107 pairs of above-mentioned control valves 137 of above-mentioned control device, thereby, above-mentioned shutter 135 is moved up and down.
Be connected with the fixed axis 141 of tubular in rotor 113 interpolations of above-mentioned control motor 111.In the upper end of this fixed axis 141, be provided with the nozzle head of giving prominence to the upper surface side of above-mentioned rotating platform 116 from the through hole 142 that is formed at above-mentioned rotating platform 116 143.On this nozzle head 143, be provided with towards the lower surface of the semiconductor wafer W that is kept by above-mentioned rotating platform 116 and spray as the soup of treatment fluid and a pair of nozzle 144 of pure water.
In above-mentioned turbulent flow prevents to cover 121 upper wall 123, form peristome 145 opposed to each other with said nozzle head 143, the treatment fluid that sprays from said nozzle 144 by this peristome 145 can arrive the lower surface of semiconductor wafer W.
Be rotated semiconductor wafer W that platform 116 keeps above, disposing first two-fluid spray nozzle 151, second two-fluid spray nozzle 152 and the 3rd two-fluid spray nozzle 153, the front end of these nozzles is respectively towards the center of above-mentioned semiconductor wafer W.
As shown in Figure 7, first two-fluid spray nozzle 151 is connecting with first supply source 155 of supplying with sulfuric acid by first pipe arrangement 156.Second two-fluid spray nozzle 152 is connecting with second supply source 157 of supplying with aquae hydrogenii dioxidi by second pipe arrangement 158.The 3rd two-fluid spray nozzle 153 is connecting by the 3rd supply source 158 of the 3rd pipe arrangement 160 with ammoniacal liquor.
Moreover, by supplying with to first two-fluid spray nozzle to the, three two-fluid spray nozzle pipes 151～153 liquid of supplying with these nozzles is added the gas-pressurized that presses to high pressure such as nitrogen vaporific and that spray from each nozzle body 151～152 from the branched pipe 161a～161c of air supply pipe 161 branches.
In first pipe arrangement to the, three pipe arrangements 156,158,160, be respectively equipped with first liquid with control valve to the three liquid with control valve 162～164, in each branched pipe 161a～161c, be respectively equipped with first gas with control valve to the three gases with control valve 165～167.Carry out open and close controlling with control valve 162～164 and gas with control valve 165～167 by 107 pairs of liquid of above-mentioned control device.
Then, illustrate by the spin processing unit of said structure resist is peeled off from above-mentioned semiconductor wafer W, after peeling off, carry out the step of clean.
At first, supply with the semiconductor wafer W that is provided with resist at upper surface to rotating platform 116.Then, if rotating platform 116 rotates, then pass through control device 107 and open first liquid control valve 162 and second liquid control valve 163, and open first gas control valve 165 and second gas control valve 166.
Thus, supply with sulfuric acid to first two-fluid spray nozzle 151, this sulfuric acid is pressurized become with gas pressurized vaporific, injected towards the upper surface of semiconductor wafer W.Meanwhile, supply with aquae hydrogenii dioxidis to second two-fluid spray nozzle 152, this aquae hydrogenii dioxidi is pressurized become with gas pressurized vaporific, injected towards the upper surface of semiconductor wafer W.
Become vaporific and sulfuric acid that spray respectively and aquae hydrogenii dioxidi mixed before the upper end that arrives semiconductor wafer W from first two-fluid spray nozzle 151 and second two-fluid 152.Thus, supply with to semiconductor wafer W after becoming the sulfuric acid aquae hydrogenii dioxidi.
Sulfuric acid and aquae hydrogenii dioxidi are atomized the back to be mixed before will reaching semiconductor wafer W.That is, sulfuric acid and aquae hydrogenii dioxidi are supplied to semiconductor wafer W after mixing immediately.Therefore, if produce persulfuric acid by mixing sulfuric acid and aquae hydrogenii dioxidi, then in the time of the activated state of having kept this persulfuric acid, supply with the sulfuric acid aquae hydrogenii dioxidi, so can be effectively and remove the resist that is located on the semiconductor wafer W reliably to semiconductor wafer W.
If utilize the removal of the resist of sulfuric acid aquae hydrogenii dioxidi to finish, then close first liquid control valve 162 and first gas control valve 165, stop the supply of sulfuric acid, open the 3rd liquid control valve 164 and the 3rd gas control valve 167 simultaneously, with ammonia atomization, supply with to semiconductor wafer W from the 3rd two-fluid spray nozzle 153.
Thus, the ammoniacal liquor that is atomized with mix from atomizing of second two-fluid 152 and the aquae hydrogenii dioxidi that sprays, becoming cleaning fluid is semiconductor supply wafer W behind the SC-1, the upper surface of resist that cleaned being removed of semiconductor wafer W then.
First two-fluid spray nozzle to the, three two-fluid spray nozzles 151～152 so above rotating platform 116, have been disposed, so can be continuously and be located at cleaning after the peeling off and peel off of resist on the upper surface of semiconductor wafer W effectively.
Generation is used to peel off semiconductor supply wafer W after the sulfuric acid of sulfuric acid aquae hydrogenii dioxidi of resist and the hydrogen peroxide water atomization.Therefore, sulfuric acid and aquae hydrogenii dioxidi fully not only can be mixed back semiconductor supply wafer W, compare when just supplying with, can significantly reduce the use amount of sulfuric acid and aquae hydrogenii dioxidi with not atomizing.
According to experiment, not under the situation with the common injection nozzle of medical liquid atomizings such as sulfuric acid, aquae hydrogenii dioxidi, ammoniacal liquor, the use amount of soup is 0.4 liter/minute, if atomized by two-fluid spray nozzle, the use amount of soup becomes about 1/10th 0.04 liter/minute.And, under the situation of the situation of the soup that do not atomize and liquefaction, confirmed with the identical processing time carry out removing of resist and remove after cleaning the time obtained same effect.
In the respective embodiments described above, exemplified semiconductor wafer as substrate, but substrate is not limited only to semiconductor wafer, also can be the glass plate that is used for liquid crystal indicator, so long as it is just passable to remove the substrate of resist with the treatment fluid that has mixed sulfuric acid and aquae hydrogenii dioxidi.
Claims (9)
1. a substrate board treatment is handled the resist film that is located on the substrate, it is characterized in that,
This substrate board treatment possesses: the rotating platform that keeps aforesaid substrate; And nozzle body, with the substrate that is kept by this rotating platform configuration opposed to each other mutually, mix sulfuric acid and aquae hydrogenii dioxidi and supply to aforesaid substrate;
The said nozzle body possesses:
Body, longer along the radial direction of aforesaid substrate;
The first soup feed mechanism is supplied with above-mentioned sulfuric acid and aquae hydrogenii dioxidi to this body;
And the second soup feed mechanism, mix sulfuric acid and the aquae hydrogenii dioxidi supplied with to above-mentioned body by this first soup feed mechanism, supply with to the almost entire radius direction of aforesaid substrate from above-mentioned body.
2. substrate board treatment as claimed in claim 1 is characterized in that,
The above-mentioned second soup feed mechanism has: first slit forms along the length direction of a side of above-mentioned body; Second slit forms along the length direction of another side of above-mentioned body; And curved surface, connect side and another side of above-mentioned body in the lower end of above-mentioned body;
The above-mentioned first soup feed mechanism has: first feed pipe, supply with above-mentioned sulfuric acid to above-mentioned first slit; And second feed pipe, supply with above-mentioned aquae hydrogenii dioxidi to above-mentioned second slit;
Sulfuric acid of supplying with to above-mentioned first slit from above-mentioned first feed pipe and the aquae hydrogenii dioxidi of supplying with to above-mentioned second slit from above-mentioned second feed pipe, side from each slit along above-mentioned body and another side flow respectively, the curved surface in the lower end are mixed and are supplied to aforesaid substrate.
3. substrate board treatment as claimed in claim 1 is characterized in that,
The above-mentioned second soup feed mechanism has: liquid feeding channel, and the length direction in the bottom of above-mentioned body along this body forms; And a plurality of supply holes, form with predetermined distance along the length direction of above-mentioned body, be communicated with the lower surface of above-mentioned liquid feeding channel and above-mentioned body;
The above-mentioned first soup feed mechanism has: first feed pipe, supply with above-mentioned sulfuric acid to above-mentioned liquid feeding channel; And second feed pipe, supply with above-mentioned aquae hydrogenii dioxidi to above-mentioned liquid feeding channel;
Above-mentioned sulfuric acid and aquae hydrogenii dioxidi mix at above-mentioned liquid feeding channel, supply with to aforesaid substrate from above-mentioned feed flow hole.
4. substrate board treatment as claimed in claim 1 is characterized in that,
Upper surface at above-mentioned body is provided with the oscillator that makes this body ultrasonic vibration.
5. a substrate processing method using same utilizes the treatment fluid that has mixed sulfuric acid and aquae hydrogenii dioxidi that the resist film that is located on the substrate is handled, and it is characterized in that, comprising:
The operation that on rotating platform, keeps aforesaid substrate;
Above aforesaid substrate, mix the operation that sulfuric acid and aquae hydrogenii dioxidi are made treatment fluid; And
On the almost entire radius direction of the aforesaid substrate that rotates by above-mentioned rotating platform, supply with the operation of above-mentioned treatment fluid.
6. a substrate board treatment is handled the resist film that is located on the substrate, it is characterized in that,
This substrate board treatment possesses:
The rotating platform that keeps aforesaid substrate;
First two-fluid spray nozzle is configured in the top of above-mentioned rotating platform, with gas-pressurized the sulfuric acid pressurization is become and sprays after vaporific; And
Second two-fluid spray nozzle is configured in the top of above-mentioned rotating platform, with gas-pressurized the aquae hydrogenii dioxidi pressurization is become and sprays after vaporific;
To before arriving substrate, mix, and supply to aforesaid substrate from the vaporific sulfuric acid of above-mentioned first two-fluid spray nozzle injection and the vaporific aquae hydrogenii dioxidi that sprays from above-mentioned second two-fluid spray nozzle.
7. substrate board treatment as claimed in claim 6 is characterized in that,
With gas-pressurized ammoniacal liquor is pressurizeed and become the 3rd two-fluid spray nozzle that sprays after vaporific disposing above the above-mentioned rotating platform;
, make with the aquae hydrogenii dioxidi of atomized spray and ammoniacal liquor and before arriving substrate, mix and supply to aforesaid substrate being located at after resist on the aforesaid substrate handles with vaporific sulfuric acid and aquae hydrogenii dioxidi.
8. a substrate processing method using same is handled the resist film that is located on the substrate, it is characterized in that, comprising:
The operation that aforesaid substrate is rotatably kept;
With gas-pressurized the sulfuric acid pressurization is become the operation that spray vaporific back;
With gas-pressurized the aquae hydrogenii dioxidi pressurization is become the operation that spray vaporific back; And
Mix the operation that supplies to aforesaid substrate behind vaporific above-mentioned sulfuric acid and the above-mentioned aquae hydrogenii dioxidi.
9. substrate processing method using same as claimed in claim 8 is characterized in that,
Has following operation: after with vaporific sulfuric acid and aquae hydrogenii dioxidi substrate being handled, supply to aforesaid substrate after mixing vaporific aquae hydrogenii dioxidi and vaporific ammoniacal liquor.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP010027/2006 | 2006-01-18 | ||
| JP2006010027A JP2007194351A (en) | 2006-01-18 | 2006-01-18 | Method and device for processing substrate |
| JP015266/2006 | 2006-01-24 | ||
| JP2006015266A JP4759395B2 (en) | 2006-01-24 | 2006-01-24 | Substrate processing apparatus and processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101009206A true CN101009206A (en) | 2007-08-01 |
| CN101009206B CN101009206B (en) | 2010-10-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100020772A Expired - Fee Related CN101009206B (en) | 2006-01-18 | 2007-01-18 | Apparatus for treating substrates and method of treating substrates |
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| Country | Link |
|---|---|
| JP (1) | JP2007194351A (en) |
| CN (1) | CN101009206B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102031203A (en) * | 2009-09-25 | 2011-04-27 | 株式会社东芝 | Cleaning liquid, cleaning method, cleaning system, and method for manufacturing microstructure |
| CN110860504A (en) * | 2018-08-28 | 2020-03-06 | 航天科工惯性技术有限公司 | Cleaning device and cleaning method for quartz glass slag |
| CN112403993A (en) * | 2018-04-13 | 2021-02-26 | 合肥市夕颜科技咨询服务有限公司 | Cleaning machine for pump body |
| CN112535962A (en) * | 2019-09-20 | 2021-03-23 | 三菱电机株式会社 | Processing liquid generating method, processing liquid generating mechanism, semiconductor manufacturing apparatus, and semiconductor manufacturing method |
| CN116618352A (en) * | 2022-11-18 | 2023-08-22 | 南通创峰光电设备有限公司 | Development equipment with controllable spraying effect based on vertical conveying mode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5474840B2 (en) * | 2011-01-25 | 2014-04-16 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
| JP5813551B2 (en) * | 2012-03-28 | 2015-11-17 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
| JP6462551B2 (en) * | 2015-10-22 | 2019-01-30 | 東京エレクトロン株式会社 | Substrate processing equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100610452B1 (en) * | 2003-04-08 | 2006-08-09 | 주식회사 하이닉스반도체 | Photoresist Polymer Remover Composition |
-
2006
- 2006-01-18 JP JP2006010027A patent/JP2007194351A/en not_active Withdrawn
-
2007
- 2007-01-18 CN CN2007100020772A patent/CN101009206B/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102031203A (en) * | 2009-09-25 | 2011-04-27 | 株式会社东芝 | Cleaning liquid, cleaning method, cleaning system, and method for manufacturing microstructure |
| CN102031203B (en) * | 2009-09-25 | 2012-10-17 | 株式会社东芝 | Cleaning liquid, cleaning method, cleaning system, and method for manufacturing microstructure |
| CN112403993A (en) * | 2018-04-13 | 2021-02-26 | 合肥市夕颜科技咨询服务有限公司 | Cleaning machine for pump body |
| CN110860504A (en) * | 2018-08-28 | 2020-03-06 | 航天科工惯性技术有限公司 | Cleaning device and cleaning method for quartz glass slag |
| CN110860504B (en) * | 2018-08-28 | 2021-09-07 | 航天科工惯性技术有限公司 | Cleaning device and cleaning method for quartz glass slag |
| CN112535962A (en) * | 2019-09-20 | 2021-03-23 | 三菱电机株式会社 | Processing liquid generating method, processing liquid generating mechanism, semiconductor manufacturing apparatus, and semiconductor manufacturing method |
| US11395993B2 (en) | 2019-09-20 | 2022-07-26 | Mitsubishi Electric Corporation | Processing liquid generation method, processing liquid generation mechanism, semiconductor manufacturing apparatus, and semiconductor manufacturing method |
| CN116618352A (en) * | 2022-11-18 | 2023-08-22 | 南通创峰光电设备有限公司 | Development equipment with controllable spraying effect based on vertical conveying mode |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007194351A (en) | 2007-08-02 |
| CN101009206B (en) | 2010-10-13 |
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