CN101008750A - Liquid crystal apparatus and electronic device - Google Patents

Liquid crystal apparatus and electronic device Download PDF

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CN101008750A
CN101008750A CN 200710008278 CN200710008278A CN101008750A CN 101008750 A CN101008750 A CN 101008750A CN 200710008278 CN200710008278 CN 200710008278 CN 200710008278 A CN200710008278 A CN 200710008278A CN 101008750 A CN101008750 A CN 101008750A
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electrode
liquid crystal
common electrode
crystal device
pixel
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藤田伸
松岛寿治
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爱普生映像元器件有限公司
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Abstract

本发明提供能够实现高开口率的FFS方式的液晶装置等。 The present invention provides a liquid crystal device of the FFS mode can realize a high aperture ratio and the like. 液晶装置具有FFS方式的显示模式,作为其要素的元件基板具备:LTPS型TFT元件和源线,至少设置在源线和LTPS型TFT元件上具有平坦性的第2绝缘膜(平坦化膜),在平坦化膜上被设置成大致整个面状的共用电极,设置在共用电极上的第3绝缘膜(电介质膜),设置在电介质膜上具有多个切槽并且在与共用电极之间经过各个切槽发生边缘场(电场)的像素电极。 A liquid crystal device having a display mode of FFS mode, an element substrate elements thereof includes: LTPS type TFT element and the source line, at least provided with a flat of the second insulating film (planarizing film) on the source line and the LTPS type TFT element, planarizing film is disposed on substantially the entire planar common electrode provided on a common insulating film 3 (dielectric film) on the electrode disposed on the dielectric film having a plurality of slots and passes between the common electrode and the respective the pixel electrode fringe field (electric field) slots occur. 由此,可以使像素电极、电介质膜和公共电极平坦化。 Thereby, the pixel electrodes, the common electrode and the dielectric film flat. 由此,在像素电极和共用电极平面地看重叠的各子像素区域内的电极部分不形成凹凸状的形状(阶梯形状)的部分。 Accordingly, the pixel electrode and the common electrode plane look electrode portion overlapping the sub-pixel regions in each concavo-convex shape (step shape) of the portion not formed. 由此,能够把像素电极延伸到源线和开关元件附近为止,实现高开口率。 Thus, the pixel electrode extends to the vicinity of the source line and the switching element, to achieve a high aperture ratio.

Description

液晶装置和电子设备 The liquid crystal device and electronic equipment

技术领域 FIELD

本发明涉及适用于进行各种信息的显示的液晶装置和电子设备。 The present invention relates to a liquid crystal device and an electronic apparatus suitable for carrying out various kinds of information displayed.

背景技术 Background technique

一般,如果对液晶的显示模式进行大致区分,则存在:TN(扭曲向列:Twisted Nematic)方式,或者以宽视场角和高对比度为目的的垂直取向方式,或者以IPS(共面转换:In-Plane Switching)方式或FFS方式(边缘场切换:Fringe Field Switching)为代表的横电场方式等。 In general, if roughly divided liquid crystal display mode, there is: the TN (Twisted Nematic: Twisted Nematic) mode or a vertical alignment mode to a wide angle and a high contrast for the purpose of, or in IPS (in-plane switching: in-Plane switching) mode or the FFS (Fringe field switching: Fringe field switching) mode as represented by a lateral electric field and the like.

这之中IPS方式是使施加于液晶的电场的方向与基板大致平行的方式,与TN方式等相比具有能够提高视角特性的优点。 Among IPS a way that the direction of the substrate is applied to the liquid crystal is substantially parallel to the electric field, and the like as compared with the TN mode has the advantage of being able to improve the viewing angle characteristic.

但是,在这样的液晶装置中,一般由ITO(铟锡氧化物:Indium TinOxide)等的透明导电材料构成的像素电极,和在与该像素电极之间产生横电场的共用电极被设置在相同层,所以存在位于像素电极的上侧的液晶分子不能够被充分驱动,导致透过率等的降低的问题。 However, in such a liquid crystal device, generally consists of (Indium Tin Oxide: Indium TinOxide) ITO pixel electrode made of a transparent conductive material or the like, and is disposed in the same layer of the common electrode generating a transverse electric field between the pixel electrode and , there is located on the pixel electrode side of the liquid crystal molecules can not be sufficiently driven, resulting in problems such as reduction of transmittance.

与此相比,在FFS方式中由于形成有共用电极的层被设置在形成有像素电极的层的下侧,所以能够对位于像素电极的上侧的液晶分子也施加横方向的电场,能够充分驱动存在于该位置的液晶分子。 In contrast to this, in the FFS mode are formed due to the common electrode layer is disposed on the lower side of the pixel electrode layer is formed, it is possible for the liquid crystal molecules on the side of the pixel electrode can apply an electric field in the horizontal direction can be sufficiently driving the liquid crystal molecules present in that location. 其结果与上述IPS方式相比具有能够提高透过率等的优点。 As a result, as compared with the above IPS mode has an advantage of increasing the transmittance and the like.

这样的FFS方式的液晶装置的一例记载在专利文献1和2中。 One case of such a liquid crystal device in the FFS mode described in Patent Documents 1 and 2.

专利文献1和2所记载的液晶装置都是适用了α-Si(非晶硅)型的TFT元件的FFS方式的液晶装置。 Patent Document 1 and the liquid crystal device described is applicable 2 FFS mode liquid crystal device of a TFT element α-Si (amorphous silicon) type.

专利文献1:特开2001-235763号公报专利文献2:特开2002-182230号公报但是,在上述的专利文献1中记载的液晶装置中,与TFT元件、共用电极线等重叠的像素电极的部分具有凹凸状的形状即阶梯形状,所以在该位置处液晶分子的取向发生混乱,该位置成为不能实质性地对显示有贡献的区域,因此存在开口率降低的问题。 Pixel electrodes JP 2002-182230 However, in the liquid crystal device described in Patent Document 1, the TFT elements, the common electrode lines overlapping: Patent Document 1: Laid-Open Publication No. 2001-235763 Patent Document 2 portion having an uneven shape i.e. a stepped shape, so that confusion in the alignment of the liquid crystal molecules at a position that can not be substantially contributing to a display region, thus reducing a problem that an aperture ratio.

发明内容 SUMMARY

本发明考虑到以上的问题点而提出,目的在于提供能够实现高开口率的FFS方式的液晶装置和使用其的电子设备。 The present invention contemplates the above problems, and an object is to provide a FFS mode liquid crystal device can realize a high aperture ratio and the use of an electronic device thereof.

本发明之一,其特征在于,具备:保持液晶的基板,在所述基板上设置的开关元件,设置在所述开关元件的上侧的绝缘膜,设置在所述绝缘膜的上侧的第1电极,设置在所述第1电极的上侧的其他绝缘膜,设置在所述其他绝缘膜的上侧具有多个切槽并且在与所述第1电极之间经过所述每个切槽发生电场的第2电极。 One of the present invention is characterized in that, comprising: a substrate holding a liquid crystal, the switching element provided on the substrate, an insulating film is provided on the side of the switching element, the first side is provided on the insulating film an electrode provided on the other side of the insulating film on the first electrode, is provided on the other side of the insulating film and having a plurality of slots between the first electrode and each of said through slot the second electric field occurs.

上述的液晶装置具备保持液晶的基板。 Holding the above-described liquid crystal device substrate of the liquid crystal. 基板构成为具备:开关元件、设置在至少开关元件的上侧具有平坦性例如由丙烯酸树脂等形成的绝缘膜、设置在所述绝缘膜的上侧的第1电极、和设置在所述第1电极的上侧由例如SiO2、SiNx等形成的其他绝缘膜,设置在所述其他绝缘膜的上侧具有多个切槽并且在与第1电极之间经过该每个切槽发生电场的第2电极。 The substrate is configured to include: a switching element, an insulating film formed of an acrylic resin or the like having a flatness at least on the side of the switching element, for example, the first electrode disposed on the upper side of the insulating film, and provided on the first the upper electrode is made e.g. SiO2, SiNx and other insulating film is formed, having a plurality of slots disposed on the other side of the insulating film on each of the slot and through the second electric field occurs between the first electrode and electrode. 在优选例中,所述电场可以是在所述液晶的驱动时在与所述基板大致平行的方向和大致垂直的方向(基板的上侧方向)具有强电场成分的边缘场。 In a preferred embodiment, the electric field may be a fringe field when driving the liquid having a strong electric field component in a direction substantially parallel to the substrate and substantially perpendicular to a direction (the upper direction of the substrate). 由此、能够构成FFS方式的液晶装置。 Accordingly, the liquid crystal device can be configured FFS mode.

在优选例中、作为开关元件可以利用以例如LTPS(低温多晶硅)型的TFT元件或P-Si(多晶硅)型的TFT元件或α-Si(非晶硅)型的TFT元件等为代表的三端子型元件、或者TFD(薄膜二极管)元件等为代表的二端子型非线形元件等。 In a preferred embodiment, as a switching element such as a TFT element can be utilized in LTPS TFT element (low-temperature polysilicon) type or P-Si (polysilicon) TFT element or a type of α-Si (amorphous silicon) type, represented by three terminal type element, or a TFD (thin film diode) element or the like two-terminal type non-linear element as the representative.

在这里,一般地,如果在第1电极和第2电极平面地看重叠的区域即显示区域内存在具有凹凸状的形状(阶梯形状)的部分,则液晶的驱动时在该部分产生液晶分子的取向混乱。 Here, in general, if we look at the region overlapping the first electrode and the second electrode planarly i.e. the display area of ​​memory in a portion having an uneven shape (stepped shape), the liquid produced liquid crystal molecules when driving in the portion orientation confusion. 由此、降低该部分的显示品质。 Thus, reducing the quality of the display portion. 因此,虽然有利用遮光层等遮挡该部分的必要,但那样的话,产生与其相应开口率也相应降低的问题。 Thus, although the light shielding layer or the like is necessary to use the shielding portion, but in that case, the aperture ratio corresponding thereto produce a corresponding decrease.

与此相对,在该液晶装置中绝缘膜形成作为平坦化膜,设置在第1透明电极、其他的绝缘膜和第2透明电极的下侧。 On the other hand, the film liquid crystal device is formed as the planarizing insulating film, a transparent electrode disposed in a first, another insulating film and the second transparent electrode side. 由此、能够使第1透明电极、其他的绝缘膜和第2透明电极平坦化。 Thus, the first transparent electrode, another insulating film and the second transparent electrode is planarized. 由此,在第1透明电极和第2透明电极平面地看重叠的区域(下面,简单地称为“显示区域”)内不形成具有凹凸状的形状(阶梯形状)的电极部分。 Accordingly, the first transparent electrode and the second transparent electrode overlap region look plane (hereinafter, simply referred to as "display area") is not formed electrode portion having the uneven shape (stepped shape) within. 虽然尤其在开关元件附近基于其形状在显示区域内的电极上容易形成阶梯形状的部分,但这种情况能够被防止。 Although particular in the vicinity of the switching element based on the shape of the stepped portion is easily formed in the shape of the electrode within the display area, but this can be prevented. 由此,能够把直至开关元件附近作为显示区域,实现高开口率。 Thus, as the switching element until close to the display region, achieved a high aperture ratio.

在优选例中、所述基板具有与所述开关元件电连接的布线(例如源线等),优选所述布线由所述绝缘膜覆盖。 In a preferred embodiment, the substrate having wirings (e.g., source line, etc.) is electrically connected to the switching element, and the wiring is preferably covered by the insulating film. 由此,能够使位于布线的上侧的显示区域内的电极部分平坦化。 Thereby, the electrode portions in the display region on the side of the wiring is planarized. 由此,能够使直至布线附近为止作为显示区域,其结果能够实现高开口率。 Thus, up to the vicinity of the wiring so far as the display area, as a result achieved a high aperture ratio. 由此、能够适用于用于进行高分辨率显示的的液晶装置。 Accordingly, the liquid crystal device can be applied for the high resolution display.

另外,该液晶装置中、由于把其他绝缘膜设置在第1电极和第2电极之间,所以其他绝缘膜作为形成辅助电容的电介质膜发挥作用。 Further, the liquid crystal device, since the other insulating film is disposed between the first electrode and the second electrode, another insulating film as a dielectric film of the storage capacitor is formed to function. 因此,容易调整其他绝缘膜(电介质膜)的厚度,辅助电容的大小的调整变得容易。 Therefore, other readily adjust an insulating film (dielectric film) has a thickness, adjusting the size of the storage capacitor is facilitated. 例如在用于进行高分辨率显示的的液晶显示装置等需要使辅助电容大的情况下,通过把其他绝缘膜(电介质膜)的厚度设定得薄能够得到必要足够的辅助电容。 For example, high-resolution liquid crystal display device or the like displayed with the aid needs to be a large capacitance, the other by the thickness of the insulating film (dielectric film) is set to be thin can be obtained a sufficient storage capacitor is necessary. 由此,能够实现显示品质的提高,进一步实现低功耗化。 Accordingly, it is possible to improve display quality, and further achieve low power consumption.

在优选例中、其他绝缘膜(电介质膜)的厚度优选决定为使形成于自身的辅助电容的大小被设定为约100~600fF,更优选是约200~800fF。 In a preferred embodiment, the thickness of the other insulating film (dielectric film) is preferably formed to a size determined as their own storage capacitor is set to about 100 ~ 600fF, and more preferably from about 200 ~ 800fF. 另外,在分辨率大于等于200PPi的情况下,优选其他绝缘膜的厚度被设定为约50~400nm。 Further, in the case where a resolution of greater than or equal 200PPi, the thickness of the other insulating film is preferably set to about 50 ~ 400nm. 另一方面在分辨率小于200PPi的情况下,优选其他绝缘膜的厚度被设定为约200~1000nm。 On the other hand in the case where resolution of less than 200PPi, the thickness of the other insulating film is preferably set to about 200 ~ 1000nm.

另外,随着把其他绝缘膜(电介质膜)的厚度设定得薄,在第1电极和第2电极之间形成的边缘场(电场)也变强,即使是更低的电压也能够容易地使液晶分子动作。 Further, as the thickness of the other insulating film (dielectric film) is set to be thin, a fringe field (electric field) between the first electrode and the second electrode is formed also becomes strong, even lower voltages can be easily operation of the liquid crystal molecules. 例如在常黑的显示模式中把其他绝缘膜(电介质膜)厚度设定为约50~200nm时,能够使施加于第1电极和第2电极之间的与白显示对应的驱动电压为约2~5V左右。 For example in normally black display mode to another insulating film (dielectric film) is set to a thickness of about 50 to when 200nm, possible to be applied between the first electrode and the second electrode and the driving voltage corresponding to white display is about 2 - around 5V. 另外,在常黑的显示模式中把其他绝缘膜(电介质膜)的厚度设定为约200~600nm时,能够使施加于第1电极和第2电极之间的与白显示对应的驱动电压为约3~5V左右。 Further, in the normally black display mode to another insulating film (dielectric film) has a thickness of about 200 to set the time of 600 nm, it can be made and applied to the driving voltage corresponding to white display between the first electrode and the second electrode is about about 3 ~ 5V. 进一步,由于把其他的绝缘膜(电介质膜)的厚度是设定得极薄,所以在形成其他绝缘膜(电介质膜)时能够实现产量的提高。 Further, since the thickness of the other insulating film (dielectric film) is set to be thin, so that when forming another insulating film (dielectric film) can be improved yield.

在上述的液晶装置的一个方式中,所述第1电极是共用电极,并且所述第2电极是与所述开关元件电连接的单位像素电极。 In one embodiment the above-described liquid crystal device, the first electrode is a common electrode and the second electrode is a unit of a pixel electrode connected to the switching element electrically.

该方式中,可以使第1电极为共用电极,并且使第2电极为通过分别设置于绝缘膜和其他绝缘膜的接触孔等与开关元件电连接的单位像素电极(子像素)。 In this embodiment, the first electrode may be a common electrode, and the second electrode unit by the pixel electrode (subpixel) are disposed on the insulating film and the other insulating film a contact hole, etc. electrically connected to the switching element. 由此,能够使单位像素电极延伸至开关元件附近和布线(例如源线)附近,从而实现高开口率。 Thus, the unit pixel electrodes extends to the vicinity of the switching element and the wiring (e.g., source line) nearby, thereby achieving a high aperture ratio.

在优选例中,共用电极优选在作为平坦化膜的绝缘膜上形成为大致整个表面状。 In a preferred embodiment, the common electrode is preferably formed in a shape substantially the entire surface of the insulating film as a planarizing film. 由此,无需设置共用电极线,就能够满足共用电极的时间常数(电容C和电阻R积)。 Thus, without providing the common electrode line, it is possible to meet the time constant of the common electrode (product of resistance R and capacitance C). 由此,即使从这点也能够增加单位像素电极的有效面积,实现高开口率。 Accordingly, even from this point it is possible to increase the effective area of ​​the unit pixel electrode, aperture ratio.

上述的液晶装置的他的方式中,所述第1电极是与所述开关元件电连接的单位像素电极,并且所述第2电极是共用电极。 His manner as described above in the liquid crystal device, the first electrode is a unit of a pixel electrode electrically connected to the switching element, and the second electrode is a common electrode.

该方式中,可以使第1电极为经过设置于绝缘膜的接触孔等与开关元件电连接的单位像素电极(子像素),并且可以使第2电极是共用电极。 In this embodiment, the first electrode may be a unit through the pixel electrode (subpixel) is provided on the insulating film a contact hole or the like electrically connected to the switching element, and may be the second electrode is a common electrode. 由此,能够把单位像素电极延伸至开关元件附近和布线(例如源线)附近,实现高开口率。 Accordingly, it is possible to extend the unit pixel electrode and the wiring near to the switching element (e.g., source line) close to achieve a high aperture ratio.

在优选例中,优选所述布线配置在相邻的所述单位像素电极之间,所述共用电极的至少一部分与所述布线平面地看重叠。 In a preferred embodiment, the wiring is preferably arranged between the adjacent pixel electrodes of the unit, said portion of said common electrode wiring plane look least overlap.

在这里,液晶驱动时,驱动任意的一个单位像素电极的电压高时,与其相应在该一个单位像素电极和共用电极之间发生的边缘场(电场)的强度也变强,但该边缘场(电场)不会基于与布线(例如源线)平面地看重叠的共用电极的存在,影响到与该一个单位像素电极相邻的其他的一个单位像素电极。 In this, the liquid crystal driving voltage for driving a unit of an arbitrary pixel electrode is higher, its corresponding intensity fringe field (electric field) which occurs between a pixel electrode and the common electrode unit also becomes strong, but the fringe field ( electric field) is not based on the wiring (e.g., source line) look flat common electrode overlaps exist, affecting the other unit a pixel electrode adjacent to the one unit pixel electrode. 由此,能够防止该一个单位像素电极的边缘场(电场)给位于相邻的其他的单位像素电极的上侧的液晶分子的取向状态带来不好的影响,能够得到良好的显示品质,并且实现更高的高分辨率化。 This can prevent the edge of a field unit of the pixel electrode (electric field) to the alignment state of liquid crystal molecules on the pixel electrodes of other adjacent units positioned side bad effect, it is possible to obtain a good display quality, and higher high resolution.

上述的液晶装置的其他方式中,所述共用电极与比该共用电极的电阻小的共用电极线电连接。 Otherwise the above-described liquid crystal device, the common electrode line low resistance common electrode and the common electrode is electrically connected to ratio. 在优选例中,共用电极能够由ITO等高电阻化材料形成。 In a preferred embodiment, the common electrode formed of ITO can be a high-resistance material. 另一方面共用电极线能够由具有钛/铝/钛的3层构成的低电阻材料形成。 On the other hand the common electrode line can be formed of a low resistance material layer 3 composed of a titanium / aluminum / titanium. 另外,所述共用电经过分别设置于所述绝缘膜和所述其他绝缘膜的其他的接触孔与所述共用电极线电连接。 Further, the common electrode through the contact hole are provided on the other insulating film and the other insulating film and electrically connected to the common electrode line. 基于这些,可以使共用电极线和共用电极总电阻小,所以能够降低该共用电极的时间常数。 Based on these, it is possible that the common electrode line and the common electrode small total resistance, it is possible to reduce the time constant of the common electrode. 由此,防止给显示品质带来不好的影响。 This prevents the display quality is adversely affected.

在上述的液晶装置的其他的方式中,具有与所述基板夹着所述液晶相向的相向基板,所述相向基板在与所述接触孔和所述其他的接触孔对应位置具有遮光层。 In another embodiment the above-described liquid crystal device, the substrate having opposing substrate facing said liquid crystal therebetween, a counter substrate having a light-shielding layer corresponding to the contact hole and the other contact hole location.

该方式中,具有与基板夹着液晶相向的相向基板,该相向基板在与接触孔和其他的接触孔对应的位置处具有遮光层。 In this embodiment, the substrate having opposite substrate facing the liquid crystal sandwiched between the counter substrate having a light shielding layer at a position of the contact hole and the other corresponding to the contact hole. 由此,即使在接触孔和其他的接触孔的附近发生液晶分子的取向混乱的情况下,也能够利用遮光层掩盖该取向混乱的区域。 Thus the orientation of confusion, the liquid crystal molecules occurs even in the vicinity of the contact hole and other contact holes, it is possible to use the light blocking layer mask alignment disorder region. 由此,能够防止与液晶分子的取向混乱相伴的显示品质的降低。 This can prevent degradation of the display quality of the liquid crystal molecule alignment disorder accompanied.

在本发明的其他方式中,能够构成把上述的液晶装置作为显示部而具备的电子设备。 In another embodiment of the present invention, it is possible to constitute the above-described liquid crystal device as a display portion provided in the electronic device.

附图说明 BRIEF DESCRIPTION

图1是示意性地表示本发明的第1实施方式的液晶装置的构成的俯视图。 FIG 1 is a plan view schematically showing a configuration of a liquid crystal device according to the first embodiment of the present invention.

图2是表示第1实施方式的像素构成等的部分放大俯视图。 FIG 2 is a partial enlarged plan view of a pixel configuration of the first embodiment and the like.

图3是沿着图2的切断线A-A'的子像素的部分剖面图。 3 is a partial cross-sectional view taken along the cutting line in FIG. 2 A-A 'of sub-pixels.

图4是表示比较例的像素构成等的部分放大俯视图。 FIG 4 is a partial enlarged plan view of a pixel constituting the Comparative Examples and the like.

图5是沿着图4的切断线B-B'的子像素的部分剖面图。 FIG 5 is a partial cross-sectional view taken along the cutting line in FIG. 4 B-B 'of subpixels.

图6是表示第2实施方式的像素构成等的部分放大俯视图。 FIG 6 is a partial enlarged plan view of a pixel configuration of the second embodiment and the like.

图7是沿着图6的切断线C-C'的子像素的部分剖面图。 7 is a partial cross-sectional view taken along the cutting line in FIG. 6 C-C 'of subpixels.

图8是说明第2实施方式的作用效果的元件基板的部分剖面图。 8 is a partial cross-sectional view of the element substrate and effect of the second embodiment of FIG.

图9是适用了本发明的液晶装置的电子设备的例子。 FIG 9 is an example of an electronic device liquid crystal device according to the present invention is applied.

符号的说明1:下侧基板,2:上侧基板,4:液晶层,4a:液晶分子,10:像素电极,10a:切槽,20:共用电极,20a:切槽,20X:共用电极线,21:LTPS型TFT元件,32:源线,33:栅线,52:第2绝缘膜(平坦化膜),53:第3绝缘膜(电介质膜),91、93:元件基板,92:滤色器基板,100、200:液晶装置。 DESCRIPTION OF SYMBOLS 1: the lower substrate, 2: upper substrate, 4: liquid crystal layer,. 4A: a liquid crystal molecule, 10: pixel electrode, 10a: slot, 20: common electrode, 20a: slot, 2OX: the common electrode line , 21: LTPS type TFT element, 32: source line, 33: gate line, 52: second insulating film (planarizing film), 53: third insulating film (dielectric film) 91, 93: element substrate, 92: The color filter substrate 100, 200: liquid crystal device.

具体实施方式 detailed description

下面,参照附图说明用于实施本发明的最佳实施例。 The following describes the present embodiment with reference to a preferred embodiment of the invention. 而且,在以下的各种实施方式中,把本发明应用于液晶装置。 Further, in the following various embodiments, the present invention is applied to the liquid crystal device.

第1实施方式(液晶装置的构成)首先,参照图1等对本发明的第1实施方式的液晶装置100的构成等进行说明。 Embodiment of the first embodiment (a liquid crystal device) First, with reference to FIG. 1 and the like constituting the liquid crystal device according to a first embodiment of the present invention 100 will be described.

图1是示意地表示本发明的第1实施方式的液晶装置100的大致构成的俯视图。 FIG 1 is a schematic plan view showing schematic configuration of the liquid crystal device of the first embodiment of the present invention 100. 图1中,纸张的正面侧(观察侧)配置有滤色器基板92,另一方面纸张的靠后侧配置有元件基板91。 In FIG 1, the paper front side (viewing side) having the color filter substrate 92, on the other hand the sheet member disposed on the rear side of the substrate 91. 并且,图1中,规定纸张的纵方向(列方向)为Y方向,纸张的横方向(行方向)为X方向。 And, FIG. 1, a predetermined longitudinal direction of the paper (column direction) is the Y direction, the cross direction of the paper (row direction) in the X direction. 另外,在图1中,与R、G、B的各色对应的区域表示1个子像素区域SG,并且由R、G、B的各色的子像素区域SG构成的1行3列的像素阵列表示1个像素区域AG。 Further, in FIG. 1, the color region corresponding to R, G, B represents one subpixel region SG, the pixel array of 1 row 3 and the R, G, B of each color subpixel region SG configuration represents 1 pixel regions AG. 并且,以下,将在一个子像素区域SG内存在的一个显示区域称为“子像素”,另外,一个像素区域AG内对应的显示区域称为“1像素”。 And, hereinafter, referred to as "sub-pixel" a sub-pixel in a display region in the memory region of SG, further, a pixel region corresponding to the display region AG referred to as "pixel."

液晶装置100是这样形成的:元件基板91和与该元件基板91相向配置的滤色器基板92通过框状的密封部件5贴合,在该密封部件5的内侧封入液晶形成液晶层4。 The liquid crystal device 100 is formed such that: the element substrate 91 and the element substrate 91 disposed facing the color filter substrate 92 by a frame-shaped sealing member 5 bonded, a liquid crystal layer 4 sealed inside the sealing member 5.

在这里,液晶装置100是利用R、G、B3色构成的彩色显示用的液晶装置。 Here, the liquid crystal device using a liquid crystal device 100 is R, G, B3 color display with color configuration. 并且是作为开关元件采用了LTPS(低温多晶硅)型的TFT元件(下面,称为“LTPS型TFT元件21”)的有源矩阵驱动方式的液晶装置。 And as a switching element using LTPS (low temperature polysilicon) TFT element type (hereinafter referred to as "LTPS type TFT element 21") liquid crystal device of active matrix driving. 另外,该液晶装置100是在形成有像素电极等的各种电极的元件基板91侧,在与该元件基板91面大致平行的方向和大致垂直的方向(观察侧)上,发生边缘场(电场E)控制液晶分子的取向的所谓的FFS方式的液晶装置。 Further, the liquid crystal device 100 is formed in the element substrate 91 side of the various electrodes such as pixel electrodes, the element in a direction substantially parallel to the substrate surface 91 and substantially perpendicular to a direction (viewing side), the occurrence of a fringe field (electric field E) a so-called FFS mode liquid crystal device controlling alignment of liquid crystal molecules. 因此,能够在该液晶装置100中得到高视野角等。 Accordingly, it is possible to obtain a high visual field angle in the liquid crystal device 100. 另外,液晶装置100是仅进行透过型显示的透过型的液晶装置。 Further, the liquid crystal device 100 is only the transmission type liquid crystal display device of transmission type.

首先,对元件基板91的平面构成进行说明。 First, the element plane of the substrate 91 will be described. 在元件基板91的内表面上主要形成或安装有多个源线32,多个栅线33,多个LTPS型TFT元件21,多个像素电极10,共用电极20,驱动IC40,外部连接用布线35和FPC(柔性基板:Flexible Printed Circuit)41等。 The main sources are formed or mounted a plurality of lines 32, a plurality of gate lines 33, a plurality of LTPS type TFT elements 21, a plurality of pixel electrodes 91 on the inner surface of the element substrate 10, the common electrode 20, the driving IC 40, external connection wirings 35 and FPC (flexible substrate: flexible Printed Circuit) 41 and the like.

如图1所示,元件基板91具有从滤色器基板92的一边侧向外侧伸出而成的伸出区域36。 1, the element substrate 91 having laterally projecting from the side area 92 of the color filter substrate 36 formed projecting outward. 在该伸出区域36上安装有驱动IC40。 In the projecting region 36 is mounted on the driver IC40. 驱动IC40的输入侧的端子(图示略)与多个外部连接用布线35的一端侧电连接。 IC40 of the drive input-side terminals (not shown) is connected to a plurality of external connection side end of the wiring 35 electrically. 并且多个外部连接用布线35的另一端侧与FPC41电连接。 And a plurality of external connection electrically connected to the other end side of FPC41 wiring 35.

各源线32形成为向Y方向延伸且在X方向具有适宜的间隔。 Each source line 32 is formed so as to extend in the Y direction and having a suitable spacing in the X direction. 各源线32的一端侧与驱动IC40的输出侧的端子(图示略)电连接。 One end side of each terminal 32 and the source line drive output side of the IC40 (not shown) are electrically connected.

各栅线33具有例如TI(钛)/Al(铝)/TI(钛)的3层构成。 Each gate line 33 having, for example, TI (titanium) / Al (aluminum) / TI (titanium) 3 layers. 具备:以向Y方向延伸的方式形成的第1布线33a,和以从该第1布线33a的终端部向X方向且向后述的有效显示区域V内延伸的方式形成的第2布线33b。 Comprising: a first wiring extending in the Y direction is formed 33a, 33b and the second wiring so as to extend the effective display region, and said rearwardly from the terminal portion 33a of the first wiring in the X direction V formation. 各栅线33的第2布线33b以沿着与各源线32相交的方向即X方向延伸的方式且在Y方向具有适宜的间隔地形成,各栅线33的第1布线33a的一端侧与驱动IC40的输出侧的端子(图示略)电连接。 Each gate line 33b of the second wiring 33 in a direction intersecting with each of the source lines 32 extending in the X direction, i.e., the manner and having appropriate intervals in the Y direction is formed, one end side of each gate line of the first wiring 33 and 33a terminal of the output side of the drive IC40 (not shown) are electrically connected.

在各源线32和各栅线33的第2布线33b的交叉位置附近对应设置有LTPS型TFT元件21。 Corresponding to the position in the vicinity of each intersection of each source line 32 and gate line 33b of the second wiring 33 is provided LTPS type TFT element 21. LTPS型TFT元件21与各源线32,各栅线33和各像素电极10等电连接。 LTPS type TFT element 21 is connected to 32, each of the gate lines 33 and the pixel electrodes 10 and the like of each power supply line.

各像素电极10由例如ITO等透明导电材料形成,在各子像素区域SG内被对应设置。 Each pixel electrode 10 is formed of a transparent conductive material such as ITO, is provided corresponding to each sub-pixel regions SG.

共用电极20由与像素电极10相同的材料形成。 The common electrode 20 formed of the same material as the pixel electrode 10. 具有与有效显示区域V大致相同的大小的区域(用虚线围起来的区域)。 V region having substantially the same size of the area (area surrounded by a dotted line) of the effective display. 隔着图2所示的第3绝缘膜(电介质膜)53大致整个面状地设置在各像素电极10的下侧。 The third insulating film interposed therebetween as shown in FIG. 2 (a dielectric film) shape substantially the entire surface 53 provided on the lower side of each pixel electrode 10. 共用电极20通过由与该共用电极20相同的材料等构成的布线27与驱动1C40的COM端子电连接。 The common electrode 20 is connected to the COM terminal of the wire 27 is electrically driven by the same 1C40 through the common electrode 20 made of material or the like.

有效显示区域V(由2点划线围起来的区域)是多个像素区域AG在X方向和Y方向矩阵状排列的区域。 Effective display region V (the region surrounded by the two-dot chain line) of a plurality of pixel regions AG arranged in a matrix in X and Y directions region. 在该有效显示区域V显示文字,数字,图形等的图像。 The effective display region V in the display image of text, numbers, graphics, and the like. 并且,有效显示区域V的外侧的区域成为对显示没有贡献的边缘区域38。 Further, the area outside the effective display region V becomes an edge that does not contribute to the display area 38. 另外,在各像素电极10等的内表面上形成有未图示的取向膜。 Further, an alignment film (not shown) formed on the inner surface of each pixel electrode 10 and the like. 该取向膜在规定方向被施以摩擦处理(参照图2)。 The alignment film is subjected to rubbing process (see FIG. 2) in a predetermined direction.

下面,对滤色器基板92的平面构成进行说明。 Next, the planar configuration of the color filter substrate 92 will be described. 滤色器基板92具有遮光层(一般称为“黑矩阵”,以下简单地记为“BM”);R、G、B3色的着色层6R、6G、6B,过覆(overcoat)层16(参照图3)和取向膜18(参照图3)等。 The color filter substrate having a light-shielding layer 92 (commonly known as "black matrix", hereinafter simply referred to as "the BM"); layers 16 R, G, B3 color colored layers 6R, 6G, 6B, through the cover (an overcoat) ( Referring to FIG. 3) and an alignment film 18 (see FIG. 3) and the like. 并且,在以下的说明中,在不考虑颜色而指定着色层的情况下简单地记为“着色层6”,在区别颜色指定着色层的情况下记为“着色层6R”等。 Further, in the following description, but without considering the case where the specified color colored layer is simply referred to as "colored layer 6", the case where the colored layer in a specified color difference referred to as "the colored layers 6R," and the like. BM形成在划分各子像素区域SG的位置等处。 BM formed in each subpixel region SG divided position places.

在具有以上的构成的液晶装置100中,基于来自与电子设备等连接的FPC41侧的信号和电力等,利用驱动IC40,按照G1、G2、...、Gm-1、Gm(m:自然数)的顺序,依次排他地每次选择一个栅线33,并且,被选择的栅线33被提供选择电压的栅信号。 In the liquid crystal device 100 having the above configuration, based on the signal and power FPC41 from the side of the electronic equipment is connected, the drive IC 40, in accordance with the G1, G2, ..., Gm-1, Gm (m: a natural number) order, sequentially select exclusively every one gate line 33, and the selected gate lines 33 are selected to provide a gate signal voltage. 另一方面其他的非选择的栅线33被提供非选择电压的栅信号。 On the other hand other, non-selected gate lines 33 are provided non-selection voltage of the gate signal. 并且,驱动IC40针对存在于与被选择的栅线33对应的位置处的像素电极10,分别通过对应的S1、S2、...、SN-1、SN(N:自然数)的源线32和各LTPS型TFT元件21提供与显示内容对应的源信号。 The drive IC40 10, respectively, through the corresponding S1, S2, ..., SN-1, SN for the pixel electrode exists at a position corresponding to the selected gate line 33 (N: a natural number) of the source line 32 and LTPS type TFT elements 21 each provided with a display signal corresponding to the content source. 其结果,液晶层4的显示状态切换为非显示状态或者中间显示状态,液晶层4内的液晶分子的取向状态被控制。 As a result, the display state of the liquid crystal layer 4 of the non-display state or the handover intermediate display orientation state of liquid crystal molecules in the state 4, the liquid crystal layer is controlled. 由此,在有效显示区域V内能够显示所期望的图像。 Accordingly, in the effective display region V is capable of displaying a desired image.

(像素构成) (Pixels)

下面,参照图2和图3对本发明的第1实施方式的液晶装置100的像素构成等进行说明。 Pixels, etc. Next, with reference to FIGS. 2 and 3 a liquid crystal device according to a first embodiment of the present invention will be described 100 in FIG.

图2表示第1实施方式的元件基板91的4个像素的平面构成。 Plane four pixel element substrate FIG. 2 shows a first embodiment of the configuration of embodiment 91. 图3在表示沿着图2的切断线A-A'的剖面图的同时表示在通过LTPS型TFT元件21的位置进行切断时的1子像素的剖面构成。 In FIG 3 a cross-sectional view taken along the cutting line in FIG. 2 A-A 'at the same time cross-sectional view showing a sub pixel when the position of cutting through the LTPS type TFT element 21 is constituted.

首先,参照图2和图3,对第1实施方式的元件基板91的像素构成等进行说明。 First, referring to FIGS. 2 and 3, other components of the pixels constituting the substrate 91 of the first embodiment will be described.

在下侧基板1的内表面上,与源线32和栅线33的第2布线33b的交叉位置对应形成有具有大致“コ”字状的平面形状的低温型的P-Si(多晶硅)层19。 On the inner surface of the lower substrate 1, and the intersecting position of the source lines 32 and gate lines of the second wiring 33b 33 are formed in correspondence with a substantially "U" planar shape shaped low type P-Si (polysilicon) layer 19 . 在P-Si层19和下侧基板1的内表面上,在其大致整个一面上,形成有例如由SiO2等构成的栅绝缘膜50。 On the inner surface of the P-Si layer 19 and the lower side of the substrate 1, a substantially entire one surface thereof, for example, made of SiO2 and the like of the gate insulating film 50 is formed.

栅绝缘膜50在P-Si层19的一端侧且与源线32的一部平面地看重叠的位置处具有第1接触孔50a,并且在P-Si层19的另一端侧对应的位置处具有第2接触孔50b。 The gate insulating film 50 and look at one end of the P-Si layer 19 and a source line 32 at a position planarly overlapping with the first contact hole 50a, and the other end at a position corresponding to the side 19 of the P-Si layer having a second contact hole 50b. 栅绝缘膜50的内表面上形成有栅线33,其栅线33的第2布线33b如图2所示以在Y方向隔着一定的间隔向X方向延伸的方式形成,该第2布线33b与P-Si层19部分且平面地看重叠。 A gate line 33, a gate line of the second wiring 33 as shown in Figure 33b at a certain interval therebetween in the Y direction extending in the X direction is formed on the inner surface 2 of the gate insulating film 50, the second wiring 33b partial P-Si layer 19 and planar look overlapped.

在栅线33和栅绝缘膜50的内表面上形成有由例如SiO2等构成的第1绝缘膜51。 SiO2 or the like formed by the first insulating film 51 made of, for example, on the inner surface of the gate line 33 and the gate insulating film 50. 第1绝缘膜51在与第1接触孔50a对应的位置处具有第1接触孔51a,并且在与第2接触孔50b对应的位置处具有第2接触孔51b。 The first insulating film 51 having a first contact hole 51a at a position corresponding to the first contact hole 50a, and 51b having a second contact hole at a position corresponding to the second contact hole 50b is. 第1绝缘膜51的内表面上设置有源线32和中继电极77。 The active set 32 ​​and the relay electrode lines 77 on the inner surface of the first insulating film 51.

源线32如图2所示,以在X方向具有一定的间隔在Y方向延伸的方式形成。 The source lines 32 shown in Figure 2, to have a certain interval in the X direction is formed in a manner extending in the Y direction. 源线32的一部分与P-Si层19的一端侧的一部分平面地看重叠。 Source line and a portion of P-Si layer 32 side of the end portion 19 viewed planarly overlap. 源线32的一部设置成插入至第1接触孔50a和51a内。 A source line 32 is arranged to be inserted through the contact hole 50a and 51a. 该源线32与P-Si层19的一端侧电连接。 The source line 32 is electrically connected to one end side of the P-Si layer 19. 中继电极77与P-Si层19的另一端侧的一部分平面地看重叠。 Relay electrode 77 and the planar portion of the other end side of the P-Si layer 19 is seen to overlap. 中继电极77的一部分设置成插入至第2接触孔50b和51b内,该中继电极77与P-Si层19的另一端侧电连接。 Relay electrode part 77 is configured to be inserted into the second contact hole 50b and 51b, the relay electrode 77 is electrically connected to the other end of the P-Si layer 19. 由此,各源线32夹着对应的各P-Si层19与对应的各中继电极77电连接。 Thus, each of the P-Si layer is sandwiched between each of the source lines 32 corresponding to each relay 19 electrically connected to corresponding electrodes 77. 这样,在与各P-Si层19对应的位置处且与源线32和栅线33的第2布线33b的交叉位置对应,设置有LTPS型TFT元件21。 Thus, the position of the intersection and the corresponding source line 32 and gate line 33b of the second wiring 33 at a position corresponding to the respective P-Si layer 19, is provided with a LTPS type TFT element 21.

源线32、中继电极77和第1绝缘膜51的内表面上形成有例如由丙烯酸树脂等构成的第2绝缘膜52。 Source line 32, there is formed a second insulating film 52 made of an acrylic resin or the like for example, a relay electrode 77 and the first inner surface of the insulating film 51. 第2绝缘膜52的内表面具有平坦性,第2绝缘膜52构成平坦化膜。 The inner surface of the second insulating film 52 having a flatness, the second insulating film 52 constituting the planarizing film. 第2绝缘膜52在中继电极77的一端侧且第2接触孔50b和51b的附近位置具有接触孔52a。 The second insulating film 52 and the second contact holes 50b and 51b having a position near the contact hole 52a at one end side of the relay electrode 77. 并且,本发明中,第1绝缘膜51和第2绝缘膜52之间,也可以进一步设置由例如SiNx等构成的绝缘膜。 Further, the present invention, the insulating film 51 between the first and the second insulating film 52, for example, may be further provided with an insulating film made of SiNx or the like.

在第2绝缘膜52的内表面上,在其大致整个一面上,形成有与COM端子连接的共用电极20(也参照图1)。 On the inner surface of the second insulating film 52, substantially the entire one surface thereof, a common electrode is connected to the COM terminal 20 (see also FIG. 1). 共用电极20例如由ITO等的透明材料形成,在与接触孔52a对应的位置处具有开口20a。 For example, the common electrode 20 is formed of a transparent material such as ITO or the like, having an opening 20a at a position corresponding to the contact hole 52a. 在位于接触孔52a内的第2绝缘膜52的一部分和共用电极20的内表面上形成有例如由SiO2,SiNx等构成的第3绝缘膜53。 A first insulating film 3 of SiO2, SiNx or the like, for example, 53 formed on the inner surface of the portion of the common electrode and the second insulating film 52 in the contact hole 52a 20 a. 第3绝缘膜53在与第2绝缘膜52的接触孔52a对应的位置处具有接触孔53a。 Third insulating film 53 has a contact hole 53a at a position of the second insulating film 52 corresponding to the contact hole 52a. 第3绝缘膜53设置在共用电极20和后述的像素电极10之间,所以作为形成辅助电容的电介质膜而发挥作用。 Third insulating film 53 is provided between the pixel electrode 20 and the common electrode 10 described later, it is formed as a dielectric film of storage capacitor play a role. 在这里,为了确保充分的辅助电容,第3绝缘膜53的厚度d1优选设置得尽可能薄。 Here, in order to ensure sufficient storage capacitance, the third insulating film thickness d1 53 is preferably set to be as thin as possible.

为了实现该目的,优选在优选例中第3绝缘膜53的厚度d1设定为使得在自身形成的辅助电容的大小设定为约100~600fF,最好是约200~800fF。 To achieve this, the thickness is preferably in the preferred embodiment of the third insulating film 53 is set such that the size d1 of the storage capacitor itself formed is set to about 100 ~ 600fF, preferably from about 200 ~ 800fF. 另外,在分辨率大于等于200PPi时,优选第3绝缘膜53的厚度d1设定为约50~400nm,另一方面分辨率小于200PPi时,优选第3绝缘膜53的厚度d1设定为约200~1000nm。 Further, when the resolution of 200ppi or greater, preferably of a thickness d1 of the third insulating film 53 is set to about 50 ~ 400nm, less than the resolution of 200ppi On the other hand, the thickness of the third insulating film 53 preferably is set to about 200 d1 ~ 1000nm.

在第3绝缘膜53的内表面上,各子像素区域SG内,形成有由例如ITO等的透明导电材料构成的像素电极10。 On the inner surface of the third insulating film 53, in each sub-pixel region SG, the pixel electrode 10 is formed of a transparent conductive material such as ITO configuration. 像素电极10通过接触孔52a与中继电极77电连接。 The pixel electrode 10 is connected through a contact hole 77 and the relay electrode 52a. 因此,来自源线32的源信号通过LTPS型TFT元件21和中继电极77提供给像素电极10。 Thus, the source signal line 32 from the source 77 to the pixel electrode 10 via the LTPS type TFT element 21 and the relay electrode. 另外,像素电极10夹着第3绝缘膜53与共用电极20相向且平面地看重叠。 Further, the pixel electrode 10 sandwiching the third insulating film and the common electrode 5320 and planar faces look overlapped. 像素电极10设置有用于在其自身和共用电极20之间发生边缘场(电场E)的多个切槽10a。 The pixel electrode 10 is provided with a plurality of slots used between itself and the common electrode 20, fringe field (electric field E) occurs 10a. 各切槽10a在图2中,以在源线32的延伸方向隔着一定的间隔且在相对栅线33的第2布线33b的延伸方向顺时针地转动了规定角度的方向延伸的方式被设置。 Each slot 10a in FIG. 2, at a certain interval therebetween in the extending direction of the source lines 32 and rotated clockwise by a predetermined angle in the direction of the second wires 33b extending in the opposite way of the gate line 33 is provided extending in a direction .

第3绝缘膜53的一部分和像素电极10的内表面上形成有未图示的取向膜。 Is formed on a portion of the pixel electrode 10 and the inner surface of the third insulating film 53 and an alignment film (not shown). 在该取向膜上,如图2所示,在以作为栅线33的第2布线33b的延伸方向的X方向为基准逆时针地转动了角度θ优选是约5°的方向(下面称为“摩擦方向R”)上被实施了摩擦处理。 In the alignment film, as shown in FIG. 2, the reference angle θ rotated anticlockwise is preferably from about 5 ° to the X-direction as the extending direction of the gate lines 33b of the second wire 33 is a direction (hereinafter referred to as " rubbing direction R ") is subjected to a rubbing treatment. 因此,液晶分子4a的初始取向状态取向为其长轴方向沿着摩擦方向R的状态。 Thus, the liquid crystal molecules 4a initial alignment state of the rubbing direction R along its longitudinal direction state. 另外,下侧基板1的下侧设置有偏振片11,并且偏振片11的下侧设置有作为照明装置的背光灯15。 Further, the lower side of the lower side of the substrate 1 is provided with a polarizing film 11, and the lower side polarizing plate 11 is provided as a backlight illumination device 15. 由此,构成包含第1实施方式的像素构成的元件基板91。 Thus, the substrate element comprising a pixel constituting a first embodiment of the configuration of the embodiment 91.

另一方面与上述的像素构成对应的滤色器基板92构成如下所述。 The color filter substrate corresponding to the above-described configuration other hand pixel 92 configured as described below.

在上侧基板2的内表面上,各子像素区域SG内设置有由红色的着色层6R,绿色的着色层6G和蓝色的着色层6B的某一个构成的着色层6。 On the inner surface of the upper substrate 2 has a red colored layers 6R, green colored layer, one blue colored layers 6G and 6B constituting the colored layer 6 in each subpixel region SG is provided. 在上侧基板2的内表面上,在划分各子像素区域SG的位置和与LTPS型TFT元件21对应的位置处设置有BM。 On the inner surface of the upper substrate 2 is provided at the position of division of the sub-pixel region and the SG position LTPS type TFT element 21 has a corresponding BM. 因此LTPS型TFT元件21、源线32和栅线33的第2布线33b等与BM平面地看重叠。 Thus LTPS type TFT element 21, the source lines 32 and the gate lines 33b of the second wiring 33 and the like look BM plane overlap. BM和各着色层6的内表面上形成有过覆层16。 BM is formed on the inner surface of the colored layer 6, and had a 16 coating. 该过覆层16的作用是保护着色层6等不受液晶装置100的制造工序中使用的药剂等的腐蚀、污染等。 16 through the effect of the coating is to protect the colored layer 6 and other agents and the like used in the manufacturing process 100 of the liquid crystal device from corrosion, contamination and the like. 过覆层16的内表面上形成有在规定方向被实施了摩擦处理的取向膜18。 Over cladding layer formed on the alignment film is subjected to a rubbing treatment in a predetermined direction 18 on the inner surface 16. 这样,构成第1实施方式的滤色器基板92。 Thus, the configuration of the first embodiment of the color filter substrate 92.

具有以上的构成的液晶装置100,在其驱动时,如图2所示,沿着摩擦方向R处于初始取向状态的液晶分子4a利用在源线32的延伸方向发生的边缘场(电场E)逆时针地转动并向源线32的延伸方向再取向。 Liquid crystal molecules of the liquid crystal device 100 having the above configuration, when it is driven, as shown, along a rubbing direction R in the initial alignment state of 2 4a using a fringe field (electric field E) occurs in the reverse direction of the extension of the source line 32 rotated clockwise and the source lines 32 extending in the direction of reorientation. 并且,图3的剖面构成中,边缘场(电场E)在与元件基板91大致平行的方向(图3的纸张的横方向)和大致垂直的方向(图3的滤色器基板侧)具有强电场成分,在像素电极10和共用电极20之间隔着该多个切槽10a和第3绝缘膜53发生。 Further, the cross-sectional configuration of FIG. 3, a fringe field (electric field E) and a substantially vertical direction (the color filter substrate side in FIG. 3) has a strong component in a direction substantially parallel to the substrate 91 (lateral direction of the sheet of FIG. 3) electric field component occurs between the pixel electrodes 10 and the common electrode 20 via the plurality of slots 10a and the third insulating film 53. 由此,液晶分子4a的取向状态被控制,能够进行透过型显示。 Thereby, the alignment state of the liquid crystal molecules 4a to be controlled, transmission-type display can be performed. 具体地,进行该透过型显示时,从背光源15出射的照明光沿着图3所示的通路T前进,通过共用电极20、像素电极10和R、G、B的各着色层6等到达观察者。 Specifically, when, for the transmissive display, light path 3 shown T proceeds from the backlight 15. FIG emitted illumination along, through the common electrode 20, the pixel electrode 10 and the R, G, B of the colored layer 6 like to reach the viewer. 此时,该照明光通过透过该着色层6等呈现规定色相和亮度。 In this case, the illumination light exhibits a predetermined hue and brightness of the colored layer or the like through the through 6. 这样,所期望的彩色显示图像被观察者看到。 Thus, a desired color display image is seen viewer.

下面,对比较例进行了比较的第1实施方式的液晶装置100的特有的作用效果进行说明。 Next, a comparative example of a specific operational effects of the liquid crystal device according to the first embodiment of the comparator 100 will be described.

首先,参照图4和图5,对比较例的FFS方式的液晶装置500的构成进行说明。 First, referring to FIGS. 4 and 5, the configuration of Comparative Example FFS mode liquid crystal device 500 will be described. 并且,在比较例中,对与第1实施方式共用的要素赋予相同的符号,其说明简化或省略。 Further, in Comparative Examples, the same reference numerals and the common elements of the first embodiment, description thereof will be simplified or omitted.

图4表示与图2对应的比较例的元件基板93的4个像素的平面构成。 Plane four pixels of the element substrate 2 and FIG. 4 shows a comparative example corresponding to FIG. 93 configuration. 图5表示沿着图4的切断线B-B'的剖面图。 5 shows a cross-sectional view taken along the line B-B of FIG. 4 & apos ;. 并且表示在通过α-Si型TFT元件23的位置处进行切断时的1子像素的剖面构成。 It represents a sub-pixel and a cross section when cut at a position by α-Si type TFT element 23 is constituted.

比较例的液晶装置500在具有α-Si型TFT元件23的元件基板93和滤色器基板92之间封入液晶而形成有液晶层4。 Comparative Example of the liquid crystal device 500 having the α-Si type TFT element substrate 93 and the color filter element 23 is sealed with a liquid crystal layer 4 is formed between the substrate 92.

首先,元件基板93的构成如下所述。 First, the elements constituting the substrate 93 as follows.

在下侧基板1上按照每个子像素区域SG设置有由ITO等构成的共用电极20(由二点划线围起来的区域)。 On the lower substrate 1 is provided for each subpixel region SG has (area surrounded by a two-dot chain line up) by a common electrode 20 made of ITO or the like. 在共用电极20的一部分上和下侧基板1上如图4所示,设置有在Y方向隔着一定的间隔在X方向延伸的共用电极线20X。 On a portion of the common electrode 20 and the lower substrate 1 as shown in FIG. 4, there is provided in the Y direction via the common electrode line extending in a certain interval in the X direction 20X. 因此共用电极20与共用电极线20X电连接。 Thus the common electrode 20 is electrically connected to the common electrode line 20X. 共用电极线20X,省略了图示,在元件基板93上的规定位置上与COM用端子电连接。 2OX common electrode line, not shown, on the element substrate 93 in a predetermined position is electrically connected to the COM terminal. 在下侧基板1上以在Y方向隔着一定的间隔在X方向延伸的方式设置有栅线33的第2布线33b。 On the lower substrate 1 extends a certain interval therebetween in the X direction in the Y direction is provided with a gate line of the second wiring 33b 33. 第2布线33b设置在与相邻的像素对应设置的共用电极线20X的附近位置。 The second wiring 33b is provided at a position near the common electrode line and an adjacent pixel disposed corresponding to the 20X.

在共用电极20,共用电极线20X,栅线33和下侧基板1之上形成有栅绝缘膜50。 In the common electrode 20, the common electrode line 2OX, and the gate line 33 on the lower side of the substrate 1 with a gate insulating film 50 is formed. 在栅绝缘膜50上,在后述的源线32和栅线33的第2布线33b的交叉位置附近设置有成为α-Si型TFT元件23的要素的α-Si层26。 On the gate insulating film 50, the source line 32 and the later-described gate lines cross the second interconnect 33b 33 provided in a vicinity of the elements become the TFT element 23 is α-Si type α-Si layer 26.

在图4中,在栅绝缘膜50上以在Y方向延伸的方式设置有源线32。 In FIG. 4, on the gate insulating film 50 so as to extend in the Y-direction wire 32 active. 源线32以在α-Si层26上重叠的方式折曲,具有与该α-Si层26电连接的折曲部分32X。 Source line 32 superimposed on α-Si layer 26 is bent manner, in a folded electrically connected to the α-Si layer 26 portion 32X. 另外,在α-Si层26和栅绝缘膜50上设置有漏电极34。 Further, the α-Si layer 26 and the gate insulating film 50 is provided a drain electrode 34. 因此漏电极34与α-Si层26电连接。 Thus the drain electrode 34 is electrically connected to the α-Si layer 26. 因此源线32的折曲部分32X通过α-Si层26与漏电极34电连接。 Accordingly bent portion 32 of the source line 32X α-Si layer 26 electrically connected to the drain electrode 34. 这样,在该区域形成α-Si型TFT元件23。 Thus, the formation of α-Si type TFT element 23 in this region.

在栅绝缘膜50和α-Si型TFT元件23上形成有由例如SiNx等构成的钝化层54。 For example, there is a passivation layer made of SiNx or the like 54 is formed on the gate insulating film 50 and the α-Si type TFT element 23. 钝化层54在与共用电极20的一部分重叠的位置且与漏电极34的一端侧的重叠位置处具有接触孔54a。 The passivation layer 54 and the end of the pole 34 at a position overlapping the drain side holes 54a having a contact with the common electrode 20 partially overlap a position.

在钝化层54上在每个子像素区域SG形成有由ITO等构成的像素电极10。 On the passivation layer 54 with a pixel electrode 10 made of ITO or the like is formed in each subpixel region SG. 像素电极10的构成与第1实施方式相同。 The same configuration as the first embodiment 10 of the pixel electrode. 即,像素电极10具有多个切槽10a,通过接触孔54a与漏电极34电连接。 That is, the pixel electrode 10 having a plurality of slots 10a, electrode 34 is electrically connected with the drain through the contact hole 54a. 因此来自源线32的源信号通过α-Si型TFT元件23提供给像素电极10。 Thus the source signal line 32 from the source is supplied to the pixel electrode 10 by α-Si type TFT element 23. 像素电极10等上形成有未图示的取向膜。 10 and the like is formed on the pixel electrode and an alignment film (not shown). 该取向膜在与第1实施方式相同的方向被实施了摩擦处理。 The alignment film in the same manner as the first embodiment is subjected to a rubbing treatment direction.

具有以上构成的比较例的液晶装置500中,其驱动时,根据与第1实施方式的液晶装置100相同的原理控制液晶的取向,进行透过型显示。 A liquid crystal device of Comparative Example 500 in the above configuration, when it is driven, the liquid crystal alignment control of the liquid crystal device according to the first embodiment 100 of the same principle, a transmission-type display.

具有这样的构成的比较例中,具有下述的问题。 Comparative Example having such a configuration, it has the following problems.

即,比较例的具有α-Si型TFT元件23的液晶装置500中,如图5所示,设置有与第1实施方式相当的平坦化膜(第2绝缘膜52)。 That is, the liquid crystal device of Comparative Example 23 having the α-Si type TFT element 500, as shown in Figure 5, is provided with a first embodiment corresponding to a planarization film (the second insulating film 52). 因此,特别地,在与共用电极线20X的一部分平面地看重叠的区域A1,和与作为α-Si型TFT元件23的要素的漏电极34的一部分平面地看重叠的区域A2,和与源线32的一部分和平面地看重叠的区域A3中,像素电极10的部分形成为凹凸状的形状(阶梯形状)。 Thus, in particular, in the common electrode line 20X is part planarly see overlapping areas A1, and drain and factor as α-Si type TFT element 23 is a portion of planar electrode 34 viewed overlap region A2, and a source and a planar portion of area A3 to see line 32 overlaps, a portion of the pixel electrode 10 is formed as a concave and convex shape (a stepped shape). 在具有这样的阶梯形状的像素电极10的部分中产生液晶分子4a的取向混乱,给显示品质以不好的影响,所以不能把该像素电极10的部分作为显示区域进行使用。 Generating in a portion of the pixel electrode 10 having such a stepped shape of the liquid crystal molecules 4a confusion, the display quality to a bad influence, it is not the portion of the pixel electrode 10 is used as a display area. 因此,一般在滤色器基板92侧,在与该像素电极10的部分对应的位置处,设置有用于掩盖基于那样的液晶分子4a的取向混乱的显示品质的劣化的BM。 Thus, typically the color filter substrate 92 side, at the position of the portion corresponding to the pixel electrode 10 is provided with a BM-based liquid crystal molecules 4a as confusion display quality deterioration for masking. 由此,产生在比较例中开口率降低的问题。 Accordingly, in the comparative example produced an aperture ratio is reduced. 而且,在比较例中,除了共用电极20之外还设置有共用电极线20X,所以具有开口率进一步降低的问题。 Further, in Comparative Examples, in addition to the common electrode 20 is also provided with a common electrode line 2OX, there is an aperture ratio is further lowered.

另外,比较例中,在像素电极10和共用电极20之间设置的作为电介质膜的钝化层54和栅绝缘膜50之间形成有辅助电容。 Further, in Comparative Example, an auxiliary capacitor is formed between the passivation layer and the gate insulating film 54 as a dielectric film 10 disposed between the pixel electrode 20 and the common electrode 50. 如上所述,与开口率降低相伴,像素电极10和共用电极20平面地看重叠的面积变小,出现不能得到所期望的辅助电容的问题。 As described above, with concomitant reduction in aperture ratio, the pixel electrode 10 and the common electrode 20 planarly overlap area becomes small to see, can not be obtained a desired storage capacitor problems. 再加上比较例的电介质膜的厚度d2与第1实施方式相比相当地厚,所以基于一般的静电电容的样式辅助电容的大小变得更小。 Plus the thickness d2 of the dielectric film of Comparative Example 1 as compared with the first embodiment is considerably thick, the size of capacitance based on the capacitance of the general auxiliary pattern becomes smaller. 因此,具有该构成的比较例具有很难用于用于进行高分辨率显示的的液晶显示装置的问题。 Thus, with the configuration of Comparative Example difficult for a liquid crystal display for performing high resolution display device a problem.

与此相比,在第1实施方式的液晶装置100中,在元件基板91侧,在像素电极10,第3绝缘膜53和共用电极20的下侧设置有具有平坦性的第2绝缘膜(平坦化膜)52。 In contrast to this, in the liquid crystal device 100 of the first embodiment, the element substrate 91, the pixel electrode 10, the third insulating film 53 and the lower common electrode 20 is provided with a second insulating film having a flatness ( planarizing film) 52. 由此,至少能够进行位于源线32和LTPS型TFT元件21处的像素电极10,第3绝缘膜53和共用电极20的平坦化。 Accordingly, at least the source line can be located at the pixel electrode 32 and the LTPS type TFT element 2110, the third insulating film 53 and the common electrode 20 is planarized. 即,在子像素区域SG内不形成有具有凹凸状的形状(阶梯形状)的电极部分。 That is, the electrode portion is not formed with the uneven shape (stepped shape) in the sub-pixel region SG. 由此,在能够防止在源线32和LTPS型TFT元件21附近的液晶分子4a的取向混乱,其结果,不仅能够把像素电极10不仅延伸到源线32和LTPS型TFT元件21附近,还能够延伸到相邻的其它的像素电极10附近。 Accordingly, the source line 32 can be prevented in the vicinity of the LTPS type TFT and the element 21 of the liquid crystal molecules 4a disorder, as a result, not only the pixel electrode 10 extends not only to the vicinity of the source line 32 and the LTPS type TFT element 21, can also be extend to other adjacent pixel electrodes in the vicinity of 10. 由此,与比较例相比能够实现高开口率。 Thus, as compared with Comparative Example can achieve a high aperture ratio.

进一步,在第1实施方式中把共用电极20在第2绝缘膜(平坦化膜)52上的大致整个面上配置(当除去接触孔52a的部分),所以可以使共用电极20的时间常数(电容C和电阻R的积)成为小的值。 Further, in the first embodiment, the common electrode 20 on substantially the entire surface 52 arranged in the second insulating film (planarizing film) (when removing part of the contact hole 52a), it is possible to make the time constant of the common electrode 20 ( product of resistance R and capacitance C) becomes a small value. 因此,在第1实施方式中,不设置有与比较例相当的共用电极线20X。 Thus, in the first embodiment, it is not provided with the comparative example corresponding to the common electrode line 20X. 从这点也可以使像素电极10等的有效面积变大,实现高开口率。 From this point may be the effective area of ​​the pixel electrode 10 and the like becomes large aperture ratio. 由此,能够恰当地用于用于进行高分辨率显示的的液晶显示装置。 Thereby the liquid crystal, can be suitably used for high resolution display of the display device.

另外,在第1实施方式中,把作为电介质膜的第3绝缘膜53设置在像素电极10和共用电极20之间,所以容易调整第3绝缘膜53的厚度,与比较例相比容易调整辅助电容的大小。 In the first embodiment, the third insulating film as a dielectric film 53 disposed between the pixel electrodes 10 and the common electrode 20, it is easy to adjust the thickness of the third insulating film 53, the auxiliary easily adjusted as compared with Comparative Example the size of the capacitor. 在例如用于进行高分辨率显示的的液晶显示装置等有必要使辅助电容变大的情况下,通过把第3绝缘膜53的厚度d1设定得薄,能够得到必要充分的辅助电容。 For example, high resolution liquid crystal display of the display device it is necessary that the auxiliary capacitance is large, the through the thickness of the third insulating film 53 d1 is set to be thin, it is possible to obtain a necessary and sufficient storage capacitor. 因此,能够实现显示品质的提高并进而实现低功耗化。 Therefore, to achieve low power consumption can be achieved and thus improve display quality.

在优选例中第3绝缘膜53的厚度d1优选决定为使在自身形成的辅助电容的大小设定为约为100~600fF,更优选是约200~800fF。 In a preferred embodiment, the third insulating film 53 of thickness d1 is preferably determined as the setting in the size of the storage capacitor itself formed is about 100 ~ 600fF, and more preferably from about 200 ~ 800fF. 另外,在分辨率大于等于200PPi的情况下,优选把第3绝缘膜53的厚度d1设定为约50~400nm。 Further, in the case where the resolution is greater than or equal to 200PPi, preferably the thickness of the third insulating film 53 d1 is set to about 50 ~ 400nm. 另一方面在分辨率小于200PPi时,优选第3绝缘膜53的厚度d1设定为约200~1000nm。 On the other hand when the resolution is less than 200PPi, preferably of a thickness d1 of the third insulating film 53 is set to about 200 ~ 1000nm.

另外,与把作为电介质膜的第3绝缘膜53的厚度d1设定得薄相伴,像素电极10和共用电极20之间形成的边缘场(电场E)也变强,即使低电压也能够容易地使液晶分子4a动作。 Further, as the thickness of the third insulating film 53, the dielectric thin film d1 is set to be accompanied by a fringe field (electric field E) 10 is formed between the pixel electrode and the common electrode 20 becomes too strong, even at a low voltage can be easily the liquid crystal molecules 4a action. 例如常黑显示模式中在把第3绝缘膜53的厚度d1设定为约50~200nm时,可以使像素电极10和共用电极20之间施加的与白显示对应的驱动电压是约2~5V左右。 Normally black display mode, for example, the thickness of the third insulating film 53 is set to about 50 when d1 200nm, the pixel electrode can be made and the common electrode 10 is applied between ~ 20 and the driving voltage corresponding to white display is about 2 ~ 5V about. 另外,常黑的显示模式中在把第3绝缘膜53的厚度d1设定为约200~600nm时,可以使像素电极10和共用电极20之间施加的与白显示对应的驱动电压是约3~5V左右。 Further, normally black display mode in the thickness of the third insulating film 53 is set to about 200 when d1 of 600 nm, the pixel electrode can be made and the common electrode 10 is applied between ~ 20 and the driving voltage corresponding to white display is about 3 - around 5V. 进一步,第3绝缘膜53的厚度d1能够被设定得极薄,所以在形成第3绝缘膜53时能够实现生产率的提高。 Further, the thickness D1 of the third insulating film 53 can be set to be thin, so that the third insulating film is formed can be improved productivity 53.

另外,第1实施方式中在滤色器基板92侧在与上述的各连结孔对应的位置处配置有BM,所以在该各接触孔的附近液晶分子4a的取向发生混乱时,也能够利用BM掩盖取向混乱的区域。 Further, the first embodiment arranged in the color filter substrate 92 side at a position corresponding to each of the above-described coupling holes are BM, so the liquid crystal molecules in the vicinity of each of the contact hole 4a of the chaos, it is possible to use BM cover up orientation chaotic region. 由此,能够防止与液晶分子4a的取向混乱相伴的显示品质的降低。 This can prevent degradation of the display quality of the liquid crystal molecules 4a and concomitant disorder.

第2实施方式下面,参照图6和图7对本发明的第2实施方式的液晶装置200的构成进行说明。 Second embodiment Next, the configuration of FIG. 6 and 7 a liquid crystal device according to a second embodiment of the present invention 200 will be described with reference to FIG. 在这里,第2实施方式的液晶装置200是具有LTPS型TFT元件21的FFS方式的液晶装置,并且是透过型的液晶装置。 Here, the liquid crystal device 200 of the second embodiment is a FFS mode liquid crystal device having LTPS type TFT element 21, and is a transmission type liquid crystal device. 并且,在以下对与第1实施方式相同的要素赋予相同的符号,简化或省略其说明。 Further, the following are given the same reference numerals of the first embodiment of the same elements, description thereof is simplified or omitted.

图6表示第2实施方式的元件基板93的4像素的平面构成。 4 pixel plane 93 of the element substrate in FIG. 6 according to the second embodiment showing configuration. 图7表示沿图6的切断线C-C'的剖面图,并且表示在通过LTPS型TFT元件21位置进行切断时的1子像素的剖面构成。 7 shows a cross-sectional view taken along cutting line C-C 'of 6 and represents a cross section of the sub-pixels when the position is cut by LTPS type TFT element 21 is constituted.

首先,参照图6和图7对第2实施方式的元件基板93的像素构成等进行说明。 First, referring to FIGS. 6 and 7 of the element substrate of the second embodiment configured like pixel 93 will be described.

在下侧基板1的内表面上,在源线32和栅线33的第2布线33b的交叉位置上形成有P-Si层19。 On the inner surface of the lower substrate 1 is formed at a position intersecting the source lines 32 and the gate lines 33b of the second wiring 33 on which the P-Si layer 19. P-Si层19和下侧基板1的内表面上,在其大致整个面上形成有具有第1接触孔50a和第2接触孔50b的栅绝缘膜50。 P-Si layer 19 and the inner surface of the lower substrate 1 is formed on substantially the entire surface thereof with the gate insulating film has a first contact hole 50a and 50b of the second contact hole 50. 并且,第1接触孔50a和第2接触孔50b的形成位置与第1实施方式相同。 Further, the first contact hole forming position 50a and the second contact hole 50b in the first embodiment.

在栅绝缘膜50的内表面上如图6所示,栅线33的第2布线33b以在Y方向隔着一定的间隔在X方向延伸的方式形成,该第2布线33b的一部被设置在与P-Si层19平面地看重叠的位置。 As shown, the second gate line 33b to the line 33 via the inner surface of the gate insulating film 50 in the Y direction, 6 are formed in predetermined intervals in a manner extending in the X direction, the second wiring 33b is set to a in the ground plane 19 P-Si layer to see overlap. 在栅绝缘膜50的内表面上,与栅线33的第2布线33b相邻的位置,以向着与该第2布线33b的延伸方向相同的方向延伸的方式形成有共用电极线20X。 On the inner surface of the gate insulating film 50, the gate line and the second wiring 33 is adjacent to a position 33b, in the same manner towards the extending direction of the second wiring 33b is formed extending in the direction of the common electrode line 20X. 共用电极线20X优选与上述的栅线33由相同的材料形成。 20X common electrode line is preferably formed above the gate line 33 of the same material. 共用电极线20X与设置在驱动IC40内的COM端子电连接。 COM terminal of the common electrode line 20X provided in the drive connection IC40.

共用电极线20X、栅线33和栅绝缘膜50的内表面上形成有具有第1连结孔51a和第2接触孔51b的第1绝缘膜51。 The common electrode line 20X, is formed with a first insulating film 51 has a first coupling hole 51a and the second contact hole 51b on the inner surface of the gate line 33 and the gate insulating film 50. 第1接触孔51a和第2接触孔51b的形成位置与第1实施方式相同。 First contact hole forming position 51a and the second contact hole 51b in the first embodiment. 第1绝缘膜51进一步在P-Si层19的附近位置且与共用电极线20X对应的位置处具有第3的接触孔51c。 The first insulating film 51 and further at a position corresponding to 20X and the common electrode lines in the vicinity of the position P-Si layer 19 has a contact hole 51c of the third.

在图6中在第1绝缘膜51的内表面上以在相邻的子像素区域SG之间沿着Y方向延伸的方式设置有源线32。 So as to extend along the Y direction between the adjacent sub-pixel areas SG active line 32 is provided on the inner surface of the first insulating film 51 in FIG. 6. 源线32的一部分通过第1连结孔50a和51a与P-Si层19的一端侧电连接。 A portion of the source line 32 is connected through a first coupling hole 50a and the side end 51a and the electrical P-Si layer 19. 在第1绝缘膜51的内表面上,在与P-Si层19的另一端侧平面地看重叠的位置处设置有中继电极77。 On the inner surface of the first insulating film 51, at a position in the P-Si layer 19 and the other end side of the flat look overlapping the relay electrode 77 is provided. 在第1绝缘膜51的内表面上,在与第3连结孔51c平面地看重叠的位置和与共用电极线20X和栅线33的第2布线33b之间对应的位置处设置有其它的中继电极34。 On the inner surface of the first insulating film 51, at a location between the third and the coupling hole 51c to see a position planarly overlapping the common electrode line and gate line 20X and the second wiring 33b 33 provided corresponding to the other following the electrodes 34.

中继电极77通过第2接触孔50b和51b与P-Si层19的另一端侧电连接。 Relay electrode 77 of the second contact hole 50b and 51b is electrically connected to the other end of the P-Si layer 19 through. 因此源线32通过P-Si层19与中继电极77电连接。 Thus the source lines 32 are electrically connected by P-Si layer 19 and the relay electrode 77. 由此,在与P-Si层19对应的位置处且源线32和栅线33的第2布线33b的交叉位置处形成有LTPS型TFT元件21。 Thereby, there is formed LTPS type TFT element 21 at a position at the corresponding P-Si layer 19 and the source line 32 and the gate 33 of the second wiring line 33b of the intersecting position. 另一方面其他的中继电极34通过第3的接触孔51c与共用电极线20X电连接。 Other hand the relay electrode 34 through the third contact hole 51c and is electrically connected to the common electrode line 20X.

源线32、中继电极77、其他的中继电极34和第1绝缘膜51的内表面上形成有具有连结孔52a,作为平坦化膜的第2绝缘膜52。 Source line 32, the relay electrode 77 are formed 52a, a planarizing film having a second insulating film 52 on the inner surface of the other coupling hole of the first relay electrode 34 and the insulating film 51. 并且,连结孔52a的形成位置与第1实施方式相同。 Further, the position of the connecting hole 52a is formed in the same manner as in the first embodiment. 第2绝缘膜52的内表面上按照每个子像素区域SG形成有像素电极10。 On the inner surface of the second insulating film 52 is formed on the pixel electrode 10 for each subpixel region SG. 像素电极10通过连结孔52a与中继电极77电连接。 The pixel electrode 10 is electrically connected through a connecting hole 52a and the relay electrode 77. 因此来自源线32的源信号通过LTPS型TFT元件21和中继电极77提供给像素电极10。 Thus the source signal line 32 from a source 77 is supplied to the pixel electrode 10 via the LTPS type TFT element 21 and the relay electrode.

像素电极10和第2绝缘膜52的内表面上形成有具有接触孔53a,作为电介质膜的第3绝缘膜53。 It is formed on the inner surface of the pixel electrode 10 and the second insulating film 52 are 53a, a third insulating film having a contact hole 53 as a dielectric film. 并且,接触孔53a的形成位置与第1实施方式相同。 Further, the position of the contact hole 53a is formed in the first embodiment. 第3绝缘膜53的内表面上设置有共用电极20。 It is provided on the inner surface of the third insulating film 53 of the common electrode 20. 因此各共用电极20隔着第3绝缘膜53与各像素电极10相向且平面地看重叠。 Thus each of the common electrode 20 via the third insulating film 53 and each pixel electrode 10 see and planar faces overlap. 另外,本例中,与各子像素对应的各共用电极20与位于该各子像素的纸张的左侧位置的源线32平面地看重叠。 In the present embodiment, the left source line and the position of each sub-sheets located in each pixel electrode and each common sub-pixel 2032 corresponding to a plane look overlapped. 共用电极20通过接触孔53a与其他的中继电极34电连接。 The common electrode 20 is electrically connected to the other relay electrode 34 via a contact hole 53a. 因此,共用电极20通过其他的中继电极34和共用电极线20X与驱动IC40内的COM端子电连接。 Thus, the common electrode 20 is electrically connected to the COM terminal IC40 in the drive through another relay electrode 34 and the common electrode line 20X. 另外,在共用电极20与像素电极10之间,设置有用于发生边缘场(电场E)的多个切槽20a。 Furthermore, between the common electrode 20 and the pixel electrode 10 is provided with a plurality of slots fringe field (electric field E) for generating a 20a. 各切槽20a在图6中,以在源线32的延伸方向隔着一定的间隔且相对栅线33的第2布线33b的延伸方向逆时针地转动规定角度方向延伸的方式设置。 Each slot 20a in FIG. 6, at a certain interval therebetween in the extending direction of the source line 32 and second interconnect 33b extending direction of the gate line 33 is relatively rotatably disposed extending in a predetermined angle counterclockwise direction.

第3绝缘膜53的一部分和共用电极20的内表面上形成有未图示的取向膜。 It is formed on the inner surface of a portion of the common electrode and the third insulating film 53 and an alignment film 20 (not shown). 所述取向膜上如图6所示沿着以作为共用电极线20X的延伸方向的X方向为基准逆时针转动角度θ,优选是约5°的方向被实施了摩擦处理。 The alignment layer shown in Figure 6 along a reference direction of the angle θ is counterclockwise direction X as the common electrode line extending in a direction of 20X, preferably from about 5 ° rubbing process is implemented. 因此液晶分子4a的初始取向状态取向为其长轴方向沿着摩擦方向R的状态。 Thus the initial alignment state of the liquid crystal molecules 4a in the rubbing direction R along its longitudinal direction state. 这样,形成包含第2实施方式的像素构成的元件基板93。 Thus, the substrate 93 forming the pixel element includes a first configuration of the second embodiment.

另一方面与上述的像素构成对应的滤色器基板92的构成因与第1实施方式大致相同所以省略其说明。 On the other hand the above-described configuration corresponding to pixels constituting the color filter substrate 92 due to the substantially the same as the first embodiment, description thereof is omitted. 但是设置在滤色器基板92侧的BM被配置在与源线32、栅线33的第2布线33b、共用电极线20X和LTPS型TFT元件21等平面地看重叠的位置上。 However, in a BM is provided a color filter side substrate 92 is arranged on the source line 32, the gate 33 of the second wiring line 33b, and a common electrode line 20X LTPS type TFT element 21 look like flat position overlapping.

具有以上的构成的液晶装置200,其驱动时,通过与上述的第1实施方式的液晶装置100相同的原理控制液晶分子4a的取向状态。 A liquid crystal having the above configuration of the apparatus 200, when it is driven by the same principle as the above-described first embodiment, the liquid crystal device 100 controls molecules 4a of the liquid crystal alignment state. 使得所期望的彩色显示图像被观察者看到。 So that a desired color display image is seen viewer.

下面,对第2实施方式的液晶装置200的特有的作用效果进行说明。 Next, a second embodiment of the liquid crystal device 200-specific effects will be described.

首先,第2实施方式的液晶装置200由于在元件基板93侧设置有具有平坦性的第2绝缘膜(平坦化膜)52,所以能够具有与上述的第1实施方式相同的作用效果,实现高开口率。 First, the liquid crystal device of the second embodiment 200 because provided with a flatness of the second insulating film (planarizing film) 52 is 93 the element substrate, it is possible to have the above-described first embodiment, the same effects, high the aperture ratio. 但在第2实施方式中,以降低共用电极20的时间常数为目的,有意设置了由具有例如钛/铝/钛的3层构成的低电阻材料构成的共用电极线20X。 However, in the second embodiment, in order to reduce the time constant of the common electrode 20 for the purpose of, for example, it intends to set up a common electrode line having a low resistance material composed of titanium / aluminum / titanium three-layer configuration of 20X. 由此,一方面能够防止显示品质的降低,另一方面与第1实施方式比较,相应地开口率降低。 Thus, on the one hand possible to prevent deterioration in display quality, on the other hand compared with the first embodiment, correspondingly reducing the aperture ratio.

即,如果对这点进行详述,就是共用电极20是由ITO等的高电阻材料形成。 That is, if this point be described in detail, that is, the common electrode 20 is formed of a high resistance material such as ITO. 因此在把该共用电极20在有效显示区域V的大致整个一面形成时,该共用电极20的面积变大,所以与其相伴该共用电极20的电阻变高。 Therefore, when the common electrode 20 in the effective display region V is formed substantially all over one surface, the area of ​​the common electrode 20 becomes large, and its accompanying the common electrode 20 becomes high resistance. 由此,共用电极20的时间常数变高,有可能对显示品质有不好的影响。 Thus, the time constant of the common electrode 20 becomes high, it is possible to have a bad influence on display quality. 但是第2实施方式中,由ITO构成的共用电极20按照每个子像素区域SG进行设置,所以与整个面状地形成的共用电极相比,可使该共用电极20的面积较小。 However, the second embodiment, the common electrode 20 made of ITO is disposed for each subpixel region SG, it can compared to the total surface common electrode formed of shape, it can be made small area of ​​the common electrode 20. 再加上,把各共用电极20与由低电阻材料形成的共用电极线20X连接。 Plus, the common electrode line 20 formed of a low resistance material connecting each of the common electrode 20X. 由于这些原因,共用电极线20X和共用电极20的相加的电阻较小,所以能够降低该共用电极20的时间常数。 For these reasons, the common electrode and the common electrode line 20X adding resistor 20 is small, it is possible to reduce the time constant of the common electrode 20. 由此,能够防止对显示品质产生不好的影响。 This can prevent a bad influence on the display quality. 并且,只要能够利用第2实施方式的构成充分降低共用电极20的时间常数,就能够与第1实施方式相同不需要共用电极线20X。 And, as long as the use of the second embodiment is configured to sufficiently reduce the time constant of the common electrode 20 can be the same as the first embodiment does not require a common electrode line 20X. 由此,能够得到与第1实施方式大致同等的开口率。 Accordingly, the first embodiment can be obtained with the embodiment is substantially the same opening ratio.

另外,第2实施方式中,把作为电介质膜的第3绝缘膜53设置在像素电极10和共用电极20之间,所有辅助电容的大小的调整变得容易,能够把第3绝缘膜53的厚度d1设定得极薄。 Further, the second embodiment, the third insulating film as a dielectric film 53 disposed between the pixel electrodes 10 and the common electrode 20, all of the storage capacitor resize easily, can be the thickness of the third insulating film 53 d1 is set to be extremely thin. 由此,能够得到与上述的第1实施方式相同的作用效果。 Accordingly, it is possible to obtain the above-described first embodiment, the same advantageous effects.

特别地,在第2实施方式中由于以与源线32平面地看重叠的方式设置有共用电极20,所以能够减少在任意的子像素中发生的边缘场(电场E)给予与该子像素相邻的其他的子像素的影响。 In particular, in the second embodiment, since the look overlap with the source lines 32 planar manner common electrode 20 is provided, it is possible to reduce the fringe field occurring in any sub-pixels (electric field E) administered with the subpixel affect other adjacent sub-pixels. 关于这点,参照图8(a)和(b)进行叙述。 In this regard, with reference to FIG. 8 (a) will be described, and (b).

图8(b)沿着图6的切断线D-D'的元件基板93的部分剖面图,特别表示与设置在一个源线32和该源线32的两侧的2个的子像素的部分对应的剖面图。 Partial cross-sectional view of FIG. 8 (b) of FIG. 6 along the cutting line D-D 'of FIG element substrate 93, particularly showing two sub both sides provided with a source line 32 and the source line 32 of the pixel portion cross-sectional view corresponding to FIG. 另一方面图8(a)是与图8(b)对应的比较例的元件基板95的部分剖面图。 On the other hand in FIG 8 (a) is a partial sectional view of the element substrate of Comparative Example 95 in FIG. 8 (b) corresponds to.

首先,对比较例的元件基板95的构成简单进行说明。 First, the configuration of the element substrate 95 Comparative Example is briefly described.

在下侧基板1上设置有栅绝缘膜50,并且在栅绝缘膜50上设置有第1绝缘膜51。 Disposed on the lower substrate 1 with a gate insulating film 50, and is provided with a first insulating film 51 on the gate insulating film 50. 在第1绝缘膜51上,源线32以从纸张的正面侧向纸张的背侧延伸的方式被设置。 On the first insulating film 51, source line 32 by way of the paper from the front side to the backside of the sheet is set extending. 源线32和第1绝缘膜51上设置有作为平坦化膜的第2绝缘膜52。 Planarizing film provided as the second insulating film 52 on the source line 32 and the first insulating film 51. 第2绝缘膜52上设置有共用电极20,并且在共用电极20上设置有作为电介质膜的第3绝缘膜53。 Provided on the second insulating film 52, a common electrode 20 and the common electrode 20 is provided with a third insulating film as a dielectric film 53. 在第3绝缘膜53上,与源线32的两侧对应的位置处分别设置有像素电极10。 On the third insulating film 53 at positions corresponding to both sides of the source line 32 is provided with a pixel electrode 10, respectively. 并且,以下,为了便于进行说明,分别把位于纸张的左侧的像素电极10称为“像素电极10L”,另外把位于纸张的右侧的像素电极10称为“像素电极10R”。 Further, the following, for convenience of explanation, the pixel electrode are located on the left side of the sheet 10 is referred to as "pixel electrode 10L", further the pixel electrode 10 on the right side of the paper is referred to as "pixel electrode 10R." 这样,形成比较例的元件基板95。 Thus, an element substrate 95 of the comparative example.

在具有以上的构成的比较例中,其驱动时,如同图所示,在像素电极10和共用电极20之间,在相对元件基板95的基板面大致平行的方向和大致垂直的方向(纸张的上侧方向)发生具有强电场成分的边缘场(电场E)。 In Comparative Example having the above configuration, the driving time, as shown in FIG, 10 between the pixel electrode and the common electrode 20, the substrate surface in a direction opposite the element substrate 95 is substantially parallel and substantially perpendicular to a direction (paper upper direction) occurs fringe field having a strong electric field component (electric field E). 在这里,在例如驱动像素电极10L的电压高时,与其相应在该像素电极10L和共用电极20之间发生的边缘场(电场E)的强度也变强。 Here, for example, when the driving voltage of the pixel electrode 10L is high, the intensity of its corresponding fringe field (electric field E) occurring between the pixel electrode 20 and the common electrode 10L also becomes strong. 由此,构成该边缘场(电场E)的一部分的电场Ex有可能对到相邻的的像素电极10R为止和位于该像素电极10R的上侧的液晶分子4a的取向状态产生不好的影响。 Accordingly, constituting the fringe field (electric field E) is a part of the electric field Ex possible for the adjacent pixel electrode 10R is reached and a bad influence on the alignment state of the side of the pixel electrode 10R of the liquid crystal molecules 4a.

与此相比,在第2实施方式中不会产生那样的问题。 In contrast, such a problem does not occur in the second embodiment.

即,第2实施方式中,其驱动时,如图8(b)所示,在像素电极10和设置在源线32的上侧且平面地看重叠的共用电极20之间发生边缘场(电场E)。 That is, the second embodiment, when it is driven, as shown in FIG 8 (b), in the pixel electrode 10 and the source line arranged on the side of the plane 32 and the common electrode overlap look fringe field (electric field between 20 E). 在这里,在第2实施方式中,在例如驱动像素电极10L的电压高时,与其相应在该像素电极10L和共用电极20之间发生的边缘场(电场E)的强度也变强,但该边缘场(电场E)不会基于设置在源线32的上侧且平面地看重叠的共用电极20的存在而波及相邻的像素电极10R为止。 Here, in the second embodiment, for example, when the driving voltage of the pixel electrode 10L is high, the intensity of its corresponding fringe field (electric field E) occurring between the pixel electrode 20 and the common electrode 10L also becomes strong, but a fringe field (electric field E) does not exist so far based on the pixel electrode 10R is provided on the common electrode side source line 32 and the plane 20 look overlaps the adjacent spread. 由此,由于不产生上述的比较例那样的问题,所有能够防止对位于相邻的像素电极10R的上侧的液晶分子4a的取向状态产生不好的影响,得到良好的显示品质,并且能够实现更高分辨率化。 Accordingly, such a problem is not generated comparative example described above, the alignment of all the liquid crystal molecules can be prevented on the pixel electrode 10R positioned adjacent to the side 4a of the bad influence, good display quality, and can be realized of higher resolution. 并且,其他的第2实施方式的作用效果与第1实施方式相同。 Further, the same effects as in the other embodiment of the second embodiment and the first embodiment.

变形例在上述的第1和第2实施方式中,把本发明适用于了透过型的液晶装置,但不限于此,也可以把本发明适用于反射型或半透半反型的液晶装置。 Modification In the above first and second embodiments, the present invention is applied to a transmission type liquid crystal device, but is not limited thereto, the present invention may be applicable to a reflection-type or transflective-type liquid crystal device .

另外,上述的第1和第2实施方式中把本发明适用于具有LTPS型TFT元件21的液晶装置。 Further, the above-described first and second embodiments of the present invention is applied to the liquid crystal device 21 having LTPS type TFT element. 但不限于此,在本发明中,在不脱离其主旨的范围内也可以把本发明适用于以P-Si型的TFT元件或者是α-Si型的TFT元件等为代表的三端子型元件,或者以TFD元件为代表的二端子型非线形元件。 But is not limited thereto, in the present invention, without departing from the spirit and scope of the present invention may be applied to the three-terminal element TFT is a TFT element or elements other α-Si type P-Si type typified or a two-terminal type non-linear elements represented by TFD elements.

另外,上述的第1实施方式中,设置于像素电极10的各切槽10a以相对栅线33的第2布线33b的延伸方向逆时针地转动规定角度的方向延伸的方式被设置。 Further, the above-described first embodiment, the pixel electrode is provided in each of the slots 10a to 33b extending in a direction opposite the second gate wiring line 33 is rotated counterclockwise by a predetermined angle is provided extending in a direction 10. 但不限于此,本发明中,也可以把设置于像素电极10的各切槽10a以在栅线33的第2布线33b的延伸方向隔着一定的间隔且在源线32的延伸方向延伸的方式进行设置。 However, each of the slots is not limited thereto, the present invention may be provided to the pixel electrode 10a of a constant interval therebetween in the extending direction of the gate line in the second wiring 33 and 33b extending in the extending direction of the source line 32 mode settings. 另外,在本发明中在第2实施方式中也可以把设置于共用电极20各切槽20a以在栅线33的第2布线33b的延伸方向隔着一定的间隔且在源线32的延伸方向延伸的方式进行设置。 Further, in the invention described in the second embodiment may be provided on the common electrode 20 via the respective slots 20a at certain intervals in the extending direction of the gate lines 33b of the second wiring 33 and the source lines 32 extend in the direction of extend set. 在这些情况下,摩擦方向R最好相对源线32的延伸方向顺时针地转动规定角度θ优选设定为约5°。 In these cases, the rubbing direction R relative to the extending direction of the source lines is preferably 32 to rotate clockwise by a predetermined angle θ is preferably set to about 5 °. 由此,能够容易地把液晶分子4a基于边缘场(电场E)在与各切槽10a或20a大致正交的方向再取向。 Accordingly, the liquid crystal molecules can be easily reoriented 4a with the direction of the slots 10a or 20a substantially perpendicular to the fringe field based (electric field E).

另外,第2实施方式中,对应于与着色层6R和6B分别对应的各子像素的各共用电极20以与源线32平面地看重叠的方式形成,并且对应于与着色层6G对应的子像素的共用电极20以与设置于该子像素的两侧的源线32平面地看重叠的方式形成。 Further, the second embodiment, corresponding to the common electrode and the colored layers 6R and 6B respectively corresponding to each sub-pixel 20 is formed in the source line 32 flat look overlapping manner, and corresponds to the sub-colored layers 6G corresponding the common electrode 20 is formed with the pixels disposed at both sides of the sub-pixels of the source lines 32 overlap the flat look. 但不限于此,在本发明中共用电极20也可以与在图1的各横方向(X方向)成列的子像素群相向的方式带状地形成。 But it is not limited thereto, the CCP 20 may be formed in the present invention, the strip electrode and in the transverse direction of FIG. 1 sub-pixel groups (X direction) in columns face each other. 由此,在图1的横方向位于相邻的像素电极10之间的源线32的部分,与共用电极20平面地看重叠,所以能够减少发生于任意的子像素的边缘场(电场E)给与该子像素相邻的其他的子像素的影响。 Thus, the source line between adjacent pixel electrodes in a lateral direction in FIG. 10 of portion 32, and the common electrode 20 overlap look flat, it is possible to reduce the occurrence of any sub-pixel fringe field (electric field E) give affect other sub-pixels adjacent to the sub-pixels.

另外,在本发明中,也可以把在第2实施方式设置的共用电极线20X根据规格设置为第1实施方式那样。 Further, in the present invention may be the common electrode line in the second embodiment of 20X provided to a first embodiment according to the specifications provided above embodiment.

另外,在本发明中在不脱离主旨的范围内可以进行种种的变形。 Further, in the present invention may be modified in various ways within a range not departing from the gist.

电子设备下面,对能够适用本发明的第1或第2实施方式的液晶装置100、200的电子设备的具体例参照图9进行说明。 Electronic device Next, a specific example of an electronic apparatus with reference to FIG applicable to a liquid crystal device of the first embodiment or the second embodiment of the present invention 100, 200 9.

首先,对把本发明的第1或第2实施方式的液晶装置100、200适用于可携带的个人计算机(所谓的笔记本型个人计算机)的显示部的例子进行说明。 First, an example of the display unit of the liquid crystal device of the first embodiment or the second embodiment of the present invention, the personal computer 100, 200 (a so-called notebook personal computer) is suitable for portable described. 图9(a)是表示该个人计算机的构成的立体图。 FIG. 9 (a) is a perspective view showing the configuration of the personal computer. 如同图所示,个人计算机710具备:具有键盘711的主机部712,和适用本发明的液晶显示装置作为面板的显示部713。 As shown in FIG, includes a personal computer 710: 712, and the liquid crystal of the present invention is applicable to a host portion 711 having a keyboard displayed on the display panel 713 as the apparatus unit.

然后,对把本发明的第1或第2实施方式的液晶装置100、200适用于移动电话的显示部的例子进行说明。 Then, an example of the liquid crystal display device portion of the first embodiment or the second embodiment of the present invention is applicable to a mobile telephone 100, 200 will be described. 图9(b)是表示该移动电话的构成的立体图。 FIG. 9 (b) is a perspective view showing a configuration of the mobile phone. 如同图所示,移动电话720是在具有多个操作按钮721之外,具有听筒722,话筒723,和适用了本发明的第1或第2实施方式的液晶装置100、200的显示部724。 As shown in FIG, 720 is a mobile telephone having a plurality of operation buttons in addition to 721, with the earpiece 722, a microphone 723, and application of the liquid crystal device of the first embodiment or the second embodiment of the present invention, a display unit 100, 200 724.

并且,作为能够适用本发明的第1或第2实施方式的液晶装置100、200电子设备,除了图9(a)所示的个人计算机,图9(b)所示的移动电话之外,还可以举出液晶电视、取景器型·监视器直视型的录像机、车辆导航装置、传呼机、电子记事本、计算器、文字处理器、工作站、电视电话、POS终端、数码相机等。 Further, as the liquid crystal device 100, 200 can be applied to electronic apparatus of the first embodiment or the second embodiment of the present invention, in addition to FIG. 9 (a) personal computer shown in FIG. 9 (b) shown in the mobile phone, but also a liquid crystal television, a viewfinder-type direct-view monitor type video tape recorders, car navigation device, a pager, an electronic organizer, calculator, word processor, workstation, television phone, POS terminal, a digital camera or the like.

Claims (22)

  1. 1.一种液晶装置,其特征在于:具有公共电极、连接于开关元件的像素电极、和设置于所述公共电极和所述像素电极之间的绝缘膜,其中,所述像素电极和所述公共电极在显示区域平面地看重叠,利用在所述像素电极的上侧发生的电场以及在所述公共电极和所述像素电极之间发生的电场控制液晶的取向;并且,该液晶装置具有在所述开关元件的上侧设置的平坦化膜,在所述平坦化膜的上侧设置有所述公共电极,在所述公共电极的上侧设置有所述绝缘膜,以及在所述绝缘膜的上侧设置有所述像素电极。 1. A liquid crystal device, comprising: a common electrode, the pixel electrode connected to the switching element, and an insulating film disposed between the common electrode and the pixel electrode, wherein the pixel electrode and the See common electrode to overlap the plane of the display region, an electric field occurs on the side of the pixel electrode and the electric field generated between the common electrode and the pixel electrode for controlling alignment of the liquid crystal; and, in the liquid crystal device having the planarizing film is disposed on the side of the switching element, the common electrode provided in the planarizing film on the upper side, provided with the insulating film and the insulating film on the side of the common electrode the upper side of the pixel electrode is provided.
  2. 2.根据权利要求1所述的液晶装置,其特征在于:所述像素电极通过设置于所述平坦化膜的接触孔与所述开关元件电连接,所述公共电极在与所述接触孔对应的位置形成开口。 2. The liquid crystal device according to claim 1, wherein: said pixel electrode via a planarizing film disposed on the contact hole with the electrical switching element, the common electrode corresponding to the contact hole forming an opening position.
  3. 3.根据权利要求1或权利要求2所述的液晶装置,其特征在于:所述公共电极在所述平坦膜的大致整个一面上形成。 3. The liquid crystal device according to claim 1 or claim 2, wherein: said common electrode and the flattening film is formed on substantially the entire side.
  4. 4.根据权利要求1~3中的任意一项所述的液晶装置,其特征在于:在所述像素电极上设置有切槽,隔着所述切槽及所述绝缘膜在所述像素电极和所述公共电极之间发生所述横方向的电场。 The liquid crystal device according to any one of claims 1 to 3, wherein: the slots provided on the pixel electrode via the slots and the insulating film on the pixel electrode occurs between the common electrode and the lateral direction of the electric field.
  5. 5.根据权利要求1~4中的任意一项所述的液晶装置,其特征在于:所述开关元件是TFT元件,在所述TFT元件上设置有绝缘膜,在所述绝缘膜上形成有电连接所述TFT元件和所述像素电极的中继电极。 The liquid crystal device according to any one of claims 1 to 4, wherein: said switching element is a TFT element, is provided with an insulating film on the TFT element is formed on the insulating film has electrically connecting the relay electrode of the TFT and the pixel element electrode.
  6. 6.根据权利要求1~5中的任意一项所述的液晶装置,其特征在于:所述公共电极及所述像素电极由透明材料构成。 The liquid crystal device according to any one of claims 1 to 5, characterized in that: said common electrode and the pixel electrode is made of a transparent material.
  7. 7.一种液晶装置,其特征在于:具有保持液晶的基板和设置于所述基板并相互平面地看重叠的第1电极及第2电极,利用发生在所述第2电极的上侧的电场以及在所述第1电极和所述第2电极之间发生的电场控制液晶的取向;其中,在所述第1电极和所述第2电极之间具有电介质膜并且形成辅助电容,所述电介质膜具有使所述辅助电容成为100fF~800fF的厚度。 A liquid crystal device, comprising: a liquid crystal holding substrate and the first electrode is provided on another plane of the substrate and overlapping the look and second electrodes, the electric field occurs in the second electrode on the side and the electric field generated between the first electrode and the second electrode of the liquid crystal alignment control; wherein a dielectric film between the first electrode and the second electrode and the storage capacitor is formed, the dielectric a film having a thickness of the auxiliary capacitance of 100fF ~ 800fF.
  8. 8.根据权利要求7所述的液晶装置,其特征在于:进一步具有设置于所述基板的开关元件和设置于所述开关元件的上侧的平坦化膜,其中,所述第1电极、所述电介质膜、及所述第2电极设置于所述平坦化膜的上侧。 8. The liquid crystal device according to claim 7, wherein: the switching element is further provided with the substrate and disposed on the planarizing film side of the switching element, wherein the first electrode, the said dielectric film, and the second electrode disposed on the upper side of the planarizing film.
  9. 9.根据权利要求7或8所述的液晶装置,其特征在于:在所述第2电极上设置有切槽,隔着所述切槽及所述电介质膜,在所述第1电极和所述第2电极之间发生所述横方向的电场。 The liquid crystal device of claim 7 or claim 8, wherein: is provided with a slot on the second electrode, via the slots and the dielectric film, the first electrode and the said electric field in said transverse direction is generated between the second electrode.
  10. 10.根据权利要求7~9中的任意一项所述的液晶装置,其特征在于:所述电介质膜具有使所述辅助电容成为100fF~800fF的厚度。 The liquid crystal device according to any one of claims 7 to 9, wherein: said dielectric film having a thickness of the auxiliary capacitance of 100fF ~ 800fF.
  11. 11.根据权利要求7~9中的任意一项所述的液晶装置,其特征在于:所述电介质膜具有使所述辅助电容成为200fF~800fF的厚度。 11. The liquid crystal device according to any one of claims 7 to 9, wherein: said dielectric film having a thickness of the auxiliary capacitance of 200fF ~ 800fF.
  12. 12.根据权利要求7~11中的任意一项所述的液晶装置,其特征在于:所述第1电极是公共电极,并且所述第2电极是与所述开关元件连接的像素电极。 The liquid crystal device according to any one of claims 7 to 11, wherein: the first electrode is a common electrode and the second electrode is a pixel electrode connected to the switching element.
  13. 13.权利要求7~11中的任意一项所述的液晶装置,其特征在于:所述第1电极是与所述开关元件连接的像素电极,所述第2电极是公共电极。 The liquid crystal device according to any one of claims 7 to 11, according to, wherein: the first electrode is a pixel electrode connected to the switching element, the second electrode is a common electrode.
  14. 14.根据权利要求8~13中的任意一项所述的液晶装置,其特征在于:所述第1及第2电极由透明材料构成。 The liquid crystal device according to any one of claims 8 to 13, wherein: said first and second electrodes is composed of a transparent material.
  15. 15.根据权利要求7~14中的任意一项所述的液晶装置,其特征在于:进一步具有与所述开关元件连接的布线,其中,所述布线被所述平坦化膜覆盖。 15. A liquid crystal device according to any one of claims 7 to 14, characterized by: further having a wiring connected to the switching element, wherein said wire is covered with the planarizing film.
  16. 16.一种液晶装置,其特征在于:具有公共电极、多个像素电极、配置在所述像素电极和所述公共电极之间的绝缘膜;其中,在所述像素电极的上侧设置有所述绝缘膜,在所述绝缘膜的上侧设置有所述公共电极,利用在所述公共电极的上侧发生的电场以及在所述多个像素电极的每一个和所述公共电极之间发生的电场控制液晶的取向,所述公共电极还配置在所述多个像素电极间的区域上。 16. A liquid crystal device, comprising: a common electrode having a plurality of pixel electrodes, an insulating film between the pixel electrode and the common electrode; wherein, be provided on the side of the pixel electrode said insulating film is provided with a common electrode on the side of the insulating film, the electric field occurs at the upper side and the common electrode occurs between the common electrode and each of the plurality of pixel electrodes the electric field control of the alignment of the liquid crystal, the common electrode is further disposed on a region between the plurality of pixel electrodes.
  17. 17.根据权利要求16所述的液晶装置,其特征在于:具备:基板、设置于所述基板的开关元件、和设置于所述开关元件的上侧的平坦化膜;在所述平坦化膜的上侧设置有所述像素电极。 17. The liquid crystal device according to claim 16, further comprising: comprising: a substrate, a switching element provided on the substrate, and a planarizing film disposed on the upper side of said switching element; the planarizing film the upper side of the pixel electrode is provided.
  18. 18.根据权利要求17或18所述的液晶装置,其特征在于:所述多个像素电极夹着与所述开关元件连接的布线被配置,所述布线与所述公共电极平面地看重叠地被配置,并且被所述平坦化膜覆盖。 18. The liquid crystal device of claim 17 or claim 18, wherein: said plurality of pixel electrodes arranged to sandwich the wiring is connected to the switching element, the wiring and the common electrode plane look overlapping It is arranged, and is covered with the planarizing film.
  19. 19.根据权利要求18所述的液晶装置,其特征在于:所述布线是连接于所述开关元件的源线。 19. The liquid crystal device according to claim 18, wherein: said wiring is connected to the source line of the switching element.
  20. 20.根据权利要求16~19中的任意一项所述的液晶装置,其特征在于:所述公共电极按照所述每个像素进行设置,各公共电极与比所述公共电极电阻小的公共电极线连接。 20. A according to any of 16 to 19 The liquid crystal device according to claim, characterized in that: said common electrode is set according to said each pixel, each of the common electrodes and the common electrode is smaller than a resistance of the common electrode line.
  21. 21.根据权利要求16~20中的任意一项所述的液晶装置,其特征在于:所述公共电极及所述像素电极由透明材料构成。 21. A liquid crystal device as claimed in any one of claims 16 to 20 according to, characterized in that: said common electrode and the pixel electrode is made of a transparent material.
  22. 22.一种电子设备,其特征在于:具备根据权利要求1~21中的任意一项所述的液晶装置。 22. An electronic apparatus, comprising: a liquid crystal device according to any of claims 1 to 21 in one of the.
CN 200710008278 2006-01-26 2007-01-26 Liquid crystal apparatus and electronic device CN101008750A (en)

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