CN101005028A - Plasma processing method, apparatus and storage medium - Google Patents

Plasma processing method, apparatus and storage medium Download PDF

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Publication number
CN101005028A
CN101005028A CN 200610146540 CN200610146540A CN101005028A CN 101005028 A CN101005028 A CN 101005028A CN 200610146540 CN200610146540 CN 200610146540 CN 200610146540 A CN200610146540 A CN 200610146540A CN 101005028 A CN101005028 A CN 101005028A
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gas
high frequency
lower electrode
plasma processing
substrate
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CN100521110C (en
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杉本胜
小林典之
杉山正治
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Abstract

In etching an insulating film such as an SiOC film or the like, in order to suppress a diameter of a hole or a width of a groove, a pre-processing is performed before performing the etching. In the pre-processing, a processing gas containing CF4 gas and CH3F gas is converted into a plasma, and an opening size of an opening portion of a resist mask is decreased by depositing deposits at a sidewall thereof by using the plasma. Further, in etching the SiOC film, a processing gas containing CF4 gas, CH3F gas, and N2 gas is converted into a plasma by supplying a processing gas atmosphere by using a first high frequency wave for generating the plasma, wherein the electric power divided by a surface area of a substrate becomes over 1500 W/70685.8 mm<2> (a surface area of a 300 mm wafer), and then the SiOC film is etched.

Description

Method of plasma processing, plasma processing apparatus and storage medium
Technical field
The present invention relates to utilize plasma that the dielectric film of being made by the film having low dielectric constant that contains silicon and oxygen is implemented method of plasma processing and the plasma processing apparatus handled, and the storage medium that stores the computer program that is used to implement this method.
Background technology
Semiconductor equipment has year by year the trend to highly integrated development, and for correspondence is formed at fine patternsization on the wafer, the improvement of anticorrosive additive material, exposure technique etc. obtains promoting, and it is quite little that the opening size of Etching mask also becomes.
On the other hand, highly integrated for seeking, the equipment structure adopts sandwich construction, yet, for improving responsiveness, need reduce parasitic capacitance, therefore, dielectric film for example interlayer dielectric is also advancing in the exploitation aspect the low-k membrane material.As one of this film having low dielectric constant, can enumerate the SiOC films such as silicon oxide layer that for example are called as carbon containing.
Utilize the formation technology of this class Etching mask and the combination of film having low dielectric constant, can seek high speed highly integrated, responsiveness, but one of problem in so a succession of technology is the expansion of etch process center dant.Promptly, utilizing plasma to carry out under the etched situation, the opening size of Etching mask increases, or the etching degree of the recess sidewalls of etch target film is excessive, finally the size that can cause hole, groove etc. the problem of the device characteristics that meet design occurs not reaching greater than design load.In addition, after this be used for burying underground the via of electrode, contact hole etc.,, just might causing short circuit between the hole when between the hole that adjoins each other when near each other.Therefore, Etching mask forms technology and more demonstrates its limitation, so, have required to the technology that on the etch target film, forms the size peristome also littler than Etching mask opening size.
Be used for patent documentation 1 and patent documentation 2 described technology being arranged to technology that should problem is known.In patent documentation 1, putting down in writing following content:, use SF for silicon nitride film 6Gas uses to be selected from CF as first etching gas 4Gas, CHF 3Gas, CH 2F 2Gas, CH 4At least a as second etching gas in the gas utilizes these mists to carry out etching, just can control pattern dimension, but to contain silicon and oxygen for example the SiOC film carry out under the etched situation this scheme suitable technique scheme of can not saying so.And in patent documentation 2, put down in writing to use and contained CF at least 4Gas, CHF 3Gas, N 2The mist of gas, inert gas carries out etching method to the SiOC film, but it does not note offering the power of processing gas, therefore, can not fully suppress the extension trend of recesses such as hole, groove.
Patent documentation 1: TOHKEMY 2004-103925 communique (claim 11 and the 0107th section)
Patent documentation 2: TOHKEMY 2004-247568 communique (the 0010th section)
Summary of the invention
The present invention promptly is the invention of making in these cases, its purpose is, provide a kind of when the dielectric film that is made of the film having low dielectric constant that contains silicon and oxygen is carried out etching, the little recess of opening size can be on semiconductor wafer substrates such as (hereinafter referred are a wafer), formed, and the method for plasma processing and the plasma processing apparatus of the size recess also littler can be on substrate, formed than the opening size of the peristome that is formed at Etching mask.In addition, another object of the present invention is to provide a kind of storage medium that stores the computer program that can implement this plasma processing.
Method of plasma processing of the present invention, use plasma processing apparatus that substrate is handled, this plasma processing unit has with mutual opposed upper electrode and is connected with one of lower electrode, supply with first high frequency to handling atmosphere, first high frequency electric source of gaseous plasmaization will be handled, it is characterized in that, comprising: with the operation of substrate-placing on lower electrode, this substrate is the substrate that Etching mask is arranged at the dielectric film superimposed layer that is made of the film having low dielectric constant that contains silicon and oxygen; Supply with CF class gas and the CH that contains as the compound of carbon containing and fluorine to handling atmosphere xF yThe operation of the processing gas of (x, y add up to 4 natural number) gas; Supply with first high frequency to handling atmosphere, will handle gaseous plasmaization, generate plasma, make on the sidewall of deposit attached to the peristome of resist mask, reduce the operation of opening size; After this utilize plasma that above-mentioned dielectric film is carried out etched operation.
Be preferably, above-mentioned first high frequency electric source is connected with upper electrode, supply with the second low high frequency of frequency of ratio first high frequency from second high frequency electric source that is connected with lower electrode to handling atmosphere on one side, supply with bias power to the substrate of mounting on lower electrode, Yi Bian reduce the operation of above-mentioned opening size.
Above-mentioned Etching mask is not limited to directly be formed on the above-mentioned dielectric film, also can the antireflection film of the reflection when for example being used to prevent to expose on the above-mentioned dielectric film and be formed at above-mentioned dielectric film and above-mentioned antireflection film between SiO 2Deng oxide-film etc. and form.Above-mentioned dielectric film is preferably SiOC film, SiOCH film, SiO 2Oxide-films such as film.
The power of first high frequency of supplying with above-mentioned upper electrode or above-mentioned lower electrode is preferred, and its quotient divided by substrate surface area is 1000W/70685.8mm 2More than.In addition, CH xF yThe flow-rate ratio of gas and CF class gas is preferably more than 0.05.
Another kind of method of plasma processing of the present invention, the method of using plasma processing apparatus that substrate is handled, this plasma processing unit has: be connected with one of lower electrode with mutual opposed upper electrode, be used for supplying with first high frequency, will handle first high frequency electric source of gaseous plasmaization to handling atmosphere; Be connected with above-mentioned lower electrode, be used for supplying with the second also low high frequency of frequency of ratio first high frequency to handling atmosphere, supply with second high frequency electric source of bias power to the substrate of mounting on lower electrode, it is characterized in that, comprise: with the operation of substrate-placing on lower electrode, this substrate is the substrate that Etching mask is arranged at the dielectric film superimposed layer of being made by the film having low dielectric constant that contains silicon and oxygen; Contain CF to handling the atmosphere supply 4Gas, CH xF yThe operation of the processing gas of (x, y add up to 4 natural number) gas and nitrogen; With supply with first high frequency to handling atmosphere, make that the power of supplying with above-mentioned upper electrode or lower electrode is 1500W/70685.8mm divided by the quotient of substrate surface area 2More than, will handle gaseous plasmaization, generate plasma, and supply with second high frequency to handling atmosphere, utilize plasma that above-mentioned dielectric film is carried out etched operation.
In the above-mentioned invention that reduces the Etching mask opening size, be preferably and dielectric film is carried out etched operation be suitable for the used process conditions of the present invention, that is, be preferably two invention combinations.Above-mentioned CH xF yThe flow-rate ratio of gas and CF class gas is preferably more than 0.2, below 2.
Plasma processing apparatus of the present invention is used for the dielectric film on the substrate is carried out etching, and this substrate is the substrate that Etching mask is arranged at the dielectric film superimposed layer that is made of the film having low dielectric constant that contains silicon and oxygen, it is characterized in that having: process chamber; Be located in the process chamber, and mutual opposed upper electrode and lower electrode; Be connected with one of lower electrode with above-mentioned upper electrode, be used for supplying with first high frequency, will handle first high frequency electric source of gaseous plasmaization to handling atmosphere; Be used in process chamber, supplying with CF class gas and the CH that contains as the compound of carbon containing and fluorine xF yThe unit of the processing gas of (x, y add up to 4 natural number) gas; With the control unit that is used to carry out method of plasma processing.
In addition, plasma processing apparatus of the present invention is characterised in that, has to be used for supplying with CF in process chamber 4The unit of gas, above-mentioned control unit constitutes in the mode of carrying out above-mentioned method of plasma processing.
In addition, above-mentioned plasma processing apparatus preferably has: above-mentioned first high frequency electric source that is connected with above-mentioned upper electrode; Be connected with above-mentioned lower electrode, be used for supplying with the second low high frequency of frequency than first high frequency to handling atmosphere, supply with second high frequency electric source of bias power to the substrate of mounting on lower electrode.
Another kind of plasma processing apparatus of the present invention is used for the dielectric film on the substrate is carried out etching, and this substrate is the substrate that Etching mask is arranged at the dielectric film superimposed layer that is made of the film having low dielectric constant that contains silicon and oxygen, it is characterized in that having: process chamber; Be located in the process chamber, and mutual opposed upper electrode and lower electrode; Be connected with one of lower electrode with above-mentioned upper electrode, be used for supplying with first high frequency, will handle first high frequency electric source of gaseous plasmaization to handling atmosphere; Be connected with above-mentioned lower electrode, be used for supplying with the second low high frequency of frequency of ratio first high frequency, supply with second high frequency electric source of bias power to the substrate of mounting on lower electrode to handling atmosphere; Be used in process chamber, supplying with and contain CF 4Gas, CH xF yThe unit of the processing gas of (x, y add up to 4 natural number) gas and nitrogen; With the control unit that is used to carry out method of plasma processing.
Storage medium application of the present invention is in plasma processing apparatus, this plasma processing unit has: be connected with one of lower electrode with mutual opposed upper electrode, be used for supplying with first high frequency, will handle first high frequency electric source of gaseous plasmaization to handling atmosphere; Be connected with above-mentioned lower electrode, be used for supplying with the second low high frequency of frequency of ratio first high frequency to handling atmosphere, second high frequency electric source to the substrate supply bias power of mounting on lower electrode is characterized in that, stores the computer program of operation on computers.Aforementioned calculation machine program is characterised in that: to implement the mode combination step of above-mentioned method of plasma processing.Aforementioned calculation machine program not only comprises the step group of being made up of instruction, also comprises database.
The present invention before carrying out etching, will contain CF class gas and CH when for example SiOC film superimposed layer has the substrate of Etching mask to carry out etching at the dielectric film that is made of the film having low dielectric constant that contains silicon and oxygen xF yThe processing gaseous plasmaization of gas is utilized this plasma, only exercises on the sidewall of deposit attached to the Etching mask peristome, reduces the pre-treatment of opening size.Therefore, when dielectric film is carried out etching, even recess enlarges, but because the peristome of Etching mask is narrow and small, so, also can form the recess of the little or line width in aperture.Therefore, in the formation technology of Etching mask, even in the size area of fine pattern of opening size that is difficult to reduce peristome as pattern, also can reach meet design or very near the element characteristic of design.And might on the etch target film, form the size peristome littler than the opening size of Etching mask, even at recess adjacent to each other for example under the approaching situation of the distance of via, contact hole, also needn't worry to imbed between the electrode of this recess and can be short-circuited.
In addition, another invention is to be used for and will to contain CF to handling the atmosphere supply 4Gas, CH xF yFirst high frequency of the processing gaseous plasmaization of gas and nitrogen, making the power of supplying with above-mentioned upper electrode or lower electrode is 1500W/70685.8mm divided by the quotient of substrate surface area 2More than, dielectric film is carried out etching.Therefore, by this experimental result as can be known, can suppress expansion because of the dielectric film recess of etching formation, can reach and meet element characteristic design or very approaching design, in addition, even under the distance of the recess that adjoins each other situation near each other, also needn't worry to imbed between the electrode of this recess and/or the distribution and can be short-circuited.
In addition, after above-mentioned pre-treatment, when carrying out above-mentioned etching, the little recess of opening size of the peristome that can obtain size when forming Etching mask, thus can correspondingly make pattern become finer.
Description of drawings
Fig. 1 is the floor map of plasma processing apparatus one example of the present invention.
Fig. 2 is the formation schematic diagram of plasma treatment used crystal chip W of the present invention.
Fig. 3 is the formation schematic diagram of experimental example used crystal chip W of the present invention.
Fig. 4 is the result schematic diagram of experimental example 1 of the present invention.
Fig. 5 is the result schematic diagram of experimental example 2 of the present invention.
Fig. 6 is the result schematic diagram of experimental example 6 of the present invention.
Fig. 7 is the result schematic diagram of experimental example 7 of the present invention.
Symbol description
2: plasma processing apparatus
21: process chamber
3: mounting table
31: lower electrode
31a: high frequency electric source
4: upper electrode
4a: high frequency electric source
51: Etching mask
The 54:SiOC film
55: the hole
56: groove
Embodiment
Below, an example of implementing the plasma processing apparatus of method of plasma processing among the present invention is described with Fig. 1.Plasma processing apparatus 2 shown in Figure 1 for example has: form the process chamber 21 that the vacuum chamber of confined space constitutes by inside; Be located at the mounting table 3 of the bottom surface central authorities in this process chamber 21; With to be arranged on the upper electrode 4 of mounting table 3 tops with these mounting table 3 opposed modes.
Above-mentioned process chamber 21 electrical ground, and the exhaust outlet 22 of process chamber 21 bottom surfaces is connected with exhaust apparatus 23 through blast pipe 24.This exhaust apparatus 23 is connected with not shown pressure adjustment part, and this pressure adjustment part makes vacuum exhaust in the process chamber 21 according to the signal from aftermentioned control part 2A, to keep the vacuum degree of expection.The side of process chamber 21 is provided with wafer W conveyance mouth 25, and this conveyance mouth 25 can switch by gate valve 26 controls.
Mounting table 3 comprises lower electrode 31 and from the supporter 32 of supported underneath lower electrode 31, is arranged on the bottom surface of process chamber 21 across insulating element 33.The top of mounting table 3 is provided with electrostatic chuck 34, utilizes this electrostatic chuck 34, and wafer W is positioned on the mounting table 3.Electrostatic chuck 34 is made by insulating material, in the inside of this electrostatic chuck 34, is provided with the electrode foil 36 that is connected with high-voltage DC power supply 35.Constitute: apply voltage by high-voltage DC power supply 35 to this electrode foil 36, produce static on electrostatic chuck 34 surface, with mounting in the wafer W Electrostatic Absorption on the mounting table 3 on electrostatic chuck 34.Electrostatic chuck 34 is provided with the through hole 34a that is used for discharging from the top of this electrostatic chuck 34 backside gas described later.
In mounting table 3, be formed with and (for example flow through predetermined refrigerant, existing known fluorine class fluid, water etc.) cryogen flow path 37, constitute: by cryogen flow through this cryogen flow path 37, with mounting table 3 cooling, and then will the wafer W of mounting on mounting table 3 is cooled to desired temperature by mounting table 3.In addition, lower electrode 31 is assembling not shown temperature sensor, utilizes this temperature sensor, is monitoring the wafer W temperature on the lower electrode 31 regularly.
In addition, the inside of mounting table 3 is formed with the gas flow path 38 as thermal conductivity gases such as backside gas (Back Side Gas) supply He (helium) gas, and this gas flow path 38 is provided with opening in many places on mounting table 3.This peristome is communicated with above-mentioned through hole 34a on being arranged on electrostatic chuck 34, and when when gas flow path 38 is supplied with backside gas, this backside gas flows out to the top of electrostatic chuck 34 through through hole 34a.This backside gas evenly is diffused into electrostatic chuck 34 and is positioned in the whole gap between the wafer W on the electrostatic chuck 34, like this, just can improve the thermal conductivity in this gap.
Above-mentioned lower electrode 31 is through high pass filter (HPF) 3a ground connection, and lower electrode 31 connects for example high frequency electric source 31a of 13.56MHz of second high frequency electric source through adaptation 31b.In addition,,, dispose focusing ring 39, constitute: when producing plasma, utilize this focusing ring 39, plasma is bundled to wafer W on the mounting table 3 round electrostatic chuck 34 in the neighboring of lower electrode 31.
Upper electrode 4 forms hollow form, for example evenly is formed with dispersedly in its lower section to be used for disperseing to supply with a plurality of holes 41 of handling gas in process chamber 21, forms the gas spray head.In addition, be provided with gas introduction tube 42 in the upper central of upper electrode 4, this gas introduction tube 42 connects the upper central of process chamber 21 by insulating element 27.And, when this gas introduction tube 42 to upstream direction, be divided into 5 strands, form arm 42A～42E, through valve 43A～43E, the 44A～44E of flow control portion, 45A～45E is connected with the gas supply source.This valve 43A～43E, the 44A of flow control portion～44E constitutes gas supply system 46, can utilize from the control signal of aftermentioned control part 2A and control the gas flow of each gas supply source 45A～45E and supply with cut-out.
Upper electrode 4 is through low pass filter (LPF) 47 ground connection, and upper electrode 4 is connecting through adaptation 4b and sends than the high frequency of the second high frequency electric source 31a high frequency electric source 4a of conduct first high frequency electric source of 60MHz for example.The high frequency that is sent by the high frequency electric source 4a that is connecting upper electrode 4 is equivalent to first high frequency, it is used for the processing gaseous plasmaization, the high frequency that is sent by the high frequency electric source 31a that is connecting lower electrode 31 is equivalent to second high frequency, by applying bias power to wafer W, the ion in wafer W surface introducing plasma.In addition, high frequency electric source 4a is being connected control part 2A with 31a, and according to control signal, the power of upper electrode 4 and lower electrode 31 is supplied with in control.
In addition, this plasma processing unit 2 is provided with the control part 2A that for example comprises computer, this control part 2A has data processing division of being made up of program, internal memory, CPU etc., said procedure is transmitted control signal to the each several part of plasma processing apparatus 2 by control part 2A, combined command carries out each step of aftermentioned, and wafer W is implemented plasma treatment.In addition, also has the zone that for example in internal memory, writes process parameter values such as processing pressure, processing time, gas flow, performance number, CPU is when respectively the instructing of executive program, read these processing parameters, carry and these parameter value control signal corresponding to each position of this plasma processing unit 2.This program (comprise and the input operation of processing parameter, show the program that is associated) is stored in computer-readable storage medium for example among the storage part 2B of floppy disk, CD, MO (photomagneto disk) etc., is installed in control part 2A.
The following describes the execution mode of the method for plasma processing of the present invention that uses above-mentioned plasma processing apparatus 2.At first, open gate valve 26, for example 300mm (12 inches) wafer W is moved in the process chamber 21 with not shown transport mechanism.After being positioned in this wafer W level on the mounting table 3, with the wafer W Electrostatic Absorption on mounting table 3.Then, transport mechanism is withdrawed from, closing gate valve 26 from process chamber 21.Then supply with backside gas from gas flow path 38, wafer W is cooled to predetermined temperature.Carry out following step then.
In the present embodiment, the surface element of wafer W in this example, is to form interlayer dielectric on n layer circuit, and to form thereon with the organic substance be the Etching mask 51 of principal component, and its structure is shown in Fig. 2 (a).52 is the Cu distribution of n layer, the 53rd, and as the SiC film of etch stop layer, the 54th, as the SiOC film of interlayer dielectric, 51 is Etching mask.On Etching mask 51, be formed with the peristome (hole 55) that is used on SiOC film 54, forming contact hole, the bore of these 55 bottoms, hole is for example 86nm.The thickness of each film is that for example Etching mask 51 is that 200nm, SiC film 53 are 250nm for 50nm, SiOC film 54.
The first step: pre-treatment
Utilize exhaust apparatus 23, the gas in blast pipe 24 is discharged process chambers 21 will remain in the process chamber 21 after the predetermined vacuum level, with CH 3F gas and CF 4The flow-rate ratio CH of gas 3F/CF 4For example be controlled under 0.05～0.2 the state, in process chamber 21, supply with CF from gas supply system 46 4Gas and CH 3F gas.Then, apply the above power of 60MHz, 1000W, and apply 13.56MHz, 300W power, the mist of above-mentioned gas carry out plasmaization as handling gas as second high frequency to lower electrode 31 as first high frequency to upper electrode 4.By keeping this state of certain hour, shown in Fig. 2 (b), wafer W is carried out pre-treatment.
By implementing this pre-treatment, according to the aftermentioned experimental example as can be known, in this embodiment, the opening size of Etching mask 51 peristomes, for example the bore in hole 55 reduces.CH 3F gas mainly makes the plasma generation that generates deposit, CF 4Gas mainly makes the deposit to generating carry out etched plasma generation.The inventor thinks, according to the flow-rate ratio of these gases, supply with the size (watt level of second high frequency of supplying with to lower electrode 31) etc. of size, bias power of power of first high frequency of upper electrode 4, just can control the stackeding speed of deposit and the ratio of the etching speed of deposit, and owing to there are differences between this ratio in hole 55 vertical and the horizontal plane, so just can on the sidewall in hole 55, generate deposit selectively.For example, when increasing bias power, just can strengthen to the effect of wafer W introducing as the ion of fluorine-containing spike, therefore, the etching action of 55 bottom surfaces, hole become be better than etching action hole 55 sidewalls, by regulating this bias power, just can control to 55 bottom surfaces, hole is the accumulation of the deposit on SiOC film 54 surfaces, and avoids or control the etching of SiOC film 54.That is, by bias power being set in suitable size, in other words, by being set in, its size (for example avoids under the SiOC film 54 etched degree, the 300mm wafer W is set in below the 300W), deposit is deposited on the sidewall in hole 55, to reduce opening size.
On the other hand, using to lower electrode 31 supplies first high frequency, make under the situation of the device that so-called bottom 2 frequencies of handling gaseous plasmaization constitute, owing to utilize first high-frequency energy to the ion of wafer W introducing as fluorine-containing spike, so need not to apply second high frequency, be applied to power on first high frequency by control, the accumulation of the deposit on just can control hole 55 bottom surfaces, and avoid or control etching to SiOC film 54.
The gaseous species that is used for pre-treatment is not limited to CF 4Gas and CH 3F gas also can adopt and can carry out etched gas, for example C to the deposit that generates selectively 2F 6Gas, C 3F 8Gas, C 4F 8CF class gases such as gas.In addition, can use CH as the gas that generates deposit 2F 2Gas, CHF 3Gas.In addition, also can be with for example N 2Gas is as diluent gas.
Second step: main etching
After pre-treatment finishes, stop power supply by high frequency electric source 4a, 31a, make and no longer produce plasma in the process chamber 21, then, stop by gas supply system 46 supply gas.The gas of being discharged in the process chamber 21 by exhaust apparatus 23 is removed residual gas again, will remain on predetermined vacuum degree in the process chamber 21, then, and with CH 3F gas and CF 4The flow-rate ratio CH of gas 3F/CF 4For example be controlled under 0.2～2 the state, supply with CF from gas supply system 46 4Gas, CH 3F gas, N 2Gas and O 2Gas.Then, apply the above power of 60MHz, 1500W, and apply 13.56MHz, 600W power, the mist of above-mentioned gas carry out plasmaization as handling gas as second high frequency to lower electrode 31 as first high frequency to upper electrode 4.
In this plasma, contain the spike (CF of the compound of carbon and fluorine Z1), the spike (CH of the compound of carbon, hydrogen, fluorine Z2F Z3), the spike of nitrogen and the spike of oxygen if SiOC film 54 is under these spike atmosphere, will generate SiF Z4, CO, CH Z5And CN Z6, like this, just removed SiOC film 54.In addition, Z1～Z6 is a natural number.At this moment, because O 2Gas and make the bore in hole 55 that to a certain degree increase be arranged has increased rate of etch, even there is not O 2Gas, the etching of SiOC film 54 (main etching) also will be proceeded.Like this, shown in Fig. 2 (c), SiOC film 54 is etched, on the other hand, and according to CH Z2F Z3Spike, the recess wall of SiOC film 54 is played the sedimentation of deposit, utilize the balance of etching and sedimentation, not only suppress the expansion of recess, and etching proceeded.Suppress effect that this recess enlarges by the aftermentioned experimental example as can be known, the power that offers upper electrode 4 is that 1500W becomes greatly when above.The inventor infers that its reason is CH 3The activation degree and the sedimentation of F gas are closely related, if do not increase the setting to the power of first high frequency, just can not suppress the expansion of recess.Main etching in the etching of this SiOC film 54 with when exposing a little in the subregion of SiC film 53 in wafer W of the etch stop layer of for example substrate or arrive the mode that stops before the SiC film 53, is made up order in advance.In addition, use CH as the gas that produces deposit 3F gas, but also be not limited thereto, CH can also be used 2F 2Gas, CHF 3Gas.
The 3rd step: cross etching
After main etching finishes, stop power supply by high frequency electric source 4a, 31a, stop at produce plasmas in the process chamber 21 after, stop by gas supply system 46 supply gas.Then, the gas of being discharged in the process chamber 21 by exhaust apparatus 23 is removed residual gas again, with remaining on predetermined vacuum degree in the process chamber 21, after this is called as overetched etching.
This crosses etching is for having the etching work procedure that same depth is provided with between the central portion that makes wafer W and the circumference.Promptly, in main etching, the SiOC of downside film 54 residual some amounts for example stop etching under the situation of 5nm, use then than the selection of gas used in the main etching between the SiC of SiOC film 54 and its downside film 53 and carry out etching, can in all patterns, carry out etching equably till the upper surface of SiC film 53 than high gas.
In subsequent handling, the same with existing technology, to Etching mask 51 polish, cleaning, visual examination etc.
According to above-mentioned execution mode, shown in Fig. 2 (b), enforcement reduces the pre-treatment of the opening size of Etching mask 51.At this moment, because the deposit that generates on the sidewall as the hole 55 of Etching mask 51 peristomes has elching resistant, not etched when etching is carried out, so, just might on SiOC film 54, form than the littler pattern of pattern dimension that is arranged on the Etching mask 51.
Then with CF 4Gas, CHF 3The mixed gas plasmaization of gas, nitrogen, oxygen is supplied with first high frequency that is used for plasmaization to handling atmosphere, makes that the power that is applied on upper electrode 4 or the lower electrode 31 is 1500W/70685.8mm divided by the quotient of substrate surface area 2More than, SiOC film 54 is carried out etching.Therefore, can not only guarantee holes such as contact hole, via 55 are etched into the shape of high-quality, and the width of imbedding groove etc. of its bore, distribution can be suppressed at smaller value, the opening size that the size (size of bore or groove width) of recess can also be narrowed down to the peristome when forming than Etching mask 51 is little.Therefore, even the fine pattern size area that the opening size of pattern openings portion is difficult to reduce in the formation technology of Etching mask 51 also can guarantee to meet recess size design or very approaching design, reach predetermined element characteristic.And might on the etch target film, form the size peristome littler than the opening size of Etching mask, even under the equidistant approaching situation of for example contact hole, the via that adjoin each other, also needn't worry to imbed between the electrode in this hole 55 and can be short-circuited.
In the present invention, by the wafer W of implementing above-mentioned pre-treatment is carried out etching, with carry out etched situation without above-mentioned pre-treatment and compare, can on wafer W, form the less pattern of size, so the etch process of SiOC film 54 also can according to existing process implementing.In this etching, can use for example C 4F 8Gas, CO gas, N 2The mist of gas.
In addition, using CF 4Gas, CHF 3When the mist of gas, nitrogen, oxygen is implemented above-mentioned etching, also can implement pre-treatment of the present invention to Etching mask 51.
Implement the wafer W of plasma treatment among the present invention, both can be directly on SiOC film 54 dielectric films such as grade, form Etching mask 51, also can the antireflection film of the reflection when for example being used to avoid between SiOC film 54 and the Etching mask 51 in exposure and be formed at dielectric film and antireflection film between SiO 2Deng oxide-film etc. and form.In addition, the dielectric film of low-k is not limited to SiOC film 54, also is formed at film for example SiOCH film, SiO on the semiconductor wafer etc. 2The oxide-film of film etc., the nitride film of SiON film etc. etc. can be with method of plasma processing of the present invention to carrying out etching by etched film.
The used plasma processing apparatus 2 of the present invention also can not be to supply with to upper electrode 4 to be used for and will to handle first high frequency of gaseous plasmaization, but be used for handling first high frequency of gaseous plasmaization to lower electrode 31 supplies, can adopt the device of bottom 2 frequency structure.
Embodiment
The following describes experiment for confirming that effect of the present invention is carried out.
In following experiment, use has the SiC film 53 of the thickness 50nm that plays the etch stop layer function at the naked silicon superimposed layer of diameter 300mm, and lamination has the SiOC film 54 of thickness 250nm again on this, also has, on this, use the wafer W of the resist film formation Etching mask 51 of thickness 200nm.As shown in Figure 3, on Etching mask 51, the connection that is formed for imbedding each insulating barrier wiring closet with the pattern 55 in the hole of electrode and with the corresponding pattern 56 of the groove that is called as guard ring around each chip component zone.For ease of explanation, the pattern of Etching mask 51 is also become the groove (56) of hole (55) and guard ring.The cross section of the wafer W that is used for this experiment is observed in advance with SEM (scanning electron microscope), measure bottom (interface of Etching mask 51 and SiOC film 54) the bore d1 in the hole 55 of Etching mask 51 and the groove 56 bottom width d2 of Etching mask 51, the result, d1 is 86nm, and d2 is 142nm.In following experimental example, also adopt same procedure to measure d1 and d2.In addition, the device that in each experiment wafer W is carried out plasma treatment uses device shown in Figure 1.
Experimental example 1: the evaluation test of pre-treatment
According to following process conditions, wafer W is implemented pre-treatment.
The frequency of upper electrode 4: 60MHz
The power of upper electrode 4: describe separately
The frequency of lower electrode 31: 13.56MHz
The power of lower electrode 31: 300W
Processing pressure: 6.7Pa (50mTorr)
Handle gas: CF 4/ CH 3F=200/10sccm
Processing time: 15sec
Shown in being set as follows of each example of power of upper electrode 4
Embodiment 1-1
Under above-mentioned process conditions, the power of upper electrode 4 is made as 1000W.
Embodiment 1-2
Under above-mentioned process conditions, the power of upper electrode 4 is made as 1500W.
Embodiment 1-3
Under above-mentioned process conditions, the power of upper electrode 4 is made as 2000W.
Embodiment 1-4
Under above-mentioned process conditions, the power of upper electrode 4 is made as 2500W.
Embodiment 1-5
Under above-mentioned process conditions, the power of upper electrode 4 is made as 3000W.
Comparative example 1
Under above-mentioned process conditions, the power of upper electrode 4 is made as 500W.
Experimental result
Mensuration has been implemented the bottom width d4 of the groove 56 of the bottom bore d3 in the hole 55 of Etching mask 51 in each wafer W after the above-mentioned pre-treatment and Etching mask 51.
The result as shown in Figure 4.Results verification in this experiment, can not cause the etching to SiOC film 54 under all conditions, forms deposit on the sidewall of the sidewall in hole 55 and groove 56, has the effect of the bottom width d2 of the bottom bore d1 that reduces hole 55 and groove 56.Power at upper electrode 4 is under the condition of 1000W, does not find almost what the bottom bore d3 in hole 55 has change, and the bottom width d4 of groove 56 then is reduced to 127nm from implementing pre-treatment 142nm before, and therefore, we can say has significant effect more than 1000W.In addition, although the wafer W of the SEM photo before the enforcement pre-treatment is different with the wafer W of implementing pre-treatment SEM photo afterwards, but since in the wafer W and the uniformity of pattern of the Etching mask 51 between the wafer W high, therefore can on estimating, not impact.The inventor thinks, the deposit that on hole 55 sidewalls and groove 56 sidewalls, generates also can be in the hole 55 bottom and the bottom of groove 56 generate, but the bottom of 55 bottom and groove 56 in the hole, the speed that generates deposit with this deposit is carried out etched speed good balance is arranged, so the deposit that deduction generates on the bottom of the bottom in hole 55 and groove 56 is removed.This pre-treatment is the weak power that can not carry out the etching degree of SiOC film 54 with the power setting of lower electrode 31, in addition, owing to do not use the high O of etch effect 2Gas etc., therefore, the inventor thinks that SiOC film 54 is not etched.The bottom bore d3 in hole 55 and the bottom width d4 of groove 56 all increase along with the power of upper electrode 4 and reduce, and are 1000W when above at the power of upper electrode 4, and this result is fairly obvious.In addition, in this experiment, on the sidewall that is arranged at hole 55 on the Etching mask 51 and groove 56, between the surface and SiOC film 54 of Etching mask 51, generate deposit equably, the same with the shape that runs through before the enforcement pre-treatment, form hole 55 and groove 56 perpendicular to wafer W.
Experimental example 2: the evaluation experimental of pre-treatment
Then, except with the power setting of upper electrode 4 at 2000W, and with CF 4The flow set of gas changes CH at 200sccm 3The flow of F gas makes CH 3F gas and CF 4The flow-rate ratio CH of gas 3F/CF 4Be outside 0～0.2, according to wafer W being carried out pre-treatment with experiment 1 identical condition.In this example, with CH 3F gas and CF 4The flow-rate ratio CH of gas 3F/CF 4As the reasons are as follows of parameter.The inventor thinks, this be because, as mentioned above, CF 4Gas mainly is to be used for the deposit that generates on the sidewall that is arranged at hole 55 on the Etching mask 51 and groove 56 is carried out etched etchant, CH 3F gas mainly is to be used for generating the above-mentioned sidewall of protection to avoid CF 4The gas of the deposit of the etching action of gas, their flow-rate ratio will influence the formation effect of deposit.
Embodiment 2-1
CH 3The flow of F is 10sccm, makes CH 3F/CF 4Be 0.05.
Embodiment 2-2
CH 3The flow of F is 20sccm, makes CH 3F/CF 4Be 0.1.
Embodiment 2-3
CH 3The flow of F is 30sccm, makes CH 3F/CF 4Be 0.15.
Embodiment 2-4
CH 3The flow of F is 40sccm, makes CH 3F/CF 4Be 0.2.
Comparative example 2
CH 3The flow of F is 0sccm, makes CH 3F/CF 4Be 0.
Experimental result
Be determined at the hole 55 bottom bore d3 that implemented the Etching mask 51 after the pre-treatment under each process conditions and the groove 56 bottom width d4 of Etching mask 51.The result as shown in Figure 5.Results verification in this experiment, is increasing CH 3The flow of F gas makes CH 3F gas and CF 4The flow-rate ratio CH of gas 3F/CF 4At 0.05 (CH 3The flow of F is 10sccm) when above, hole 55 bottom bore d3 and groove 56 bottom width d4 all reduce; And with flow-rate ratio CH 3F/CF 4In the processing in hole 55, be increased to 0.2 (CH 3The flow of F gas is 40sccm), in the processing of groove 56, be increased to 0.15 (CH 3The flow of F gas is 30sccm) situation under, then not only in the hole 55 and the sidewall of groove 56, the bottom of 55 bottom and groove 56 has also generated deposit in the hole.The inventor thinks, this be since in the hole 55 bottom and the bottom of groove 56, the formation speed of deposit will be higher than deposit is carried out etched speed.Thus also as can be known, CF 4Gas mainly is as etchant, plays deposit carried out etched effect, and CH 3F gas mainly is the gas that is used to generate deposit.Inventor's prediction: generate under the situation of deposit in the bottom in hole 55 and the bottom of groove 56, when after this SiOC film 54 being carried out etching, deposit can cause the etched of SiOC film 54 stopped, or hinders it and carry out, so that generates shape pattern of poor quality.In these data, flow-rate ratio CH 3F/CF 4Usable range, for hole 55, be at 0.15 (CH 3The flow of F gas is 30sccm) below, for groove 56, be at 0.1 (CH 3The flow of F is 20sccm) below.
Experimental example 3: the evaluation experimental of pre-treatment
After above-mentioned pre-treatment, SiOC film 54 is carried out etching, research can make etching state how change because of the change of the processing gas that is used for pre-treatment.Process conditions are as described below.
Pre-treatment
The frequency of upper electrode 4: 60MHz
The power of upper electrode 4: 2000W
The frequency of lower electrode 31: 13.56MHz
The power of lower electrode 31: 300W
Processing pressure: 6.7Pa (50mTorr)
Handle gas: describe separately
Main etching
The frequency of upper electrode 4: 60MHz
The power of upper electrode 4: 2000W
The frequency of lower electrode 31: 13.56MHz
The power of lower electrode 31: 600W
Processing pressure: 4.0Pa (30mTorr)
Handle gas: CF 4/ CH 3F/N 2/ O 2=50/40/330/10sccm
Cross etching
The frequency of upper electrode 4, lower electrode 31: identical with main etching
The power of upper electrode 4: 400W
The power of lower electrode 31: 1700W
Processing pressure: 6.7Pa (50mTorr)
Handle gas: C 4F 8/ Ar/N 2=10/1000/120sccm
Embodiment 3
The processing gas of pre-treatment: CF 4/ CH 3F=200/10sccm
Comparative example 3
The processing gas of pre-treatment: C 4F 8/ N 2=10/300sccm
Experimental result
Observe the hole 55 on the SiOC film 54 be formed at after the etching and the section shape of groove 56 with SEM.
The result is, under the process conditions of embodiment 3, carry out pre-treatment, the section of the hole of the SiOC film 54 after etching and groove forms excellent in shape again, but carries out pre-treatment under the process conditions of comparative example 3, and to have ladder poor for the section of the hole of the SiOC film 54 after etching and groove again.That is, the inventor thinks that the upper side of hole (or groove) is wide, and downward pars intermedia branch produces the ladder difference and narrows down.In the process conditions of comparative example 3,,, for this reason, make the etching shape irregularity of SiOC film 54 so when 54 etchings of SiOC film, Etching mask 51 is also etched because the hole 55 of Etching mask 51 and the sidewall of groove 56 do not generate deposit.
Experimental example 4: etched evaluation experimental
The wafer W of use before pre-treatment carried out etching to SiOC film 54 under following process conditions.
Main etching
Handle gas: describe separately
Other condition: with experiment 3
Cross etching
Each condition: with experiment 3
Embodiment 4-1
Main etched processing gas: CF 4/ CH 2F 2/ N 2/ O 2=50/40/330/10sccm
Embodiment 4-2
Main etched processing gas: CF 4/ CH 3F/N 2/ O 2=50/40/330/10sccm
Comparative example 4
Main etched processing gas: C 4F 8/ CO/N 2=10/90/330sccm
Experimental result
After the wafer W etching, utilize polishing to remove Etching mask 51, observe the hole be formed on the SiOC film 54 and the section shape of groove, shown in Fig. 3 (c), measure the upper end width d6 of the groove 58 of the upper end bore d5 in hole 57 of SiOC film 54 and SiOC film 54 with SEM.This moment since can not determine formation apart from the degree of depth on 57 surfaces, hole of SiOC film 54 and the difference that causes because of each process conditions apart from the degree of depth on groove 58 surfaces of SiOC film 54, so, as described later, under the normalized situation of width recruitment of bore recruitment that does not make hole 57 and groove 58, estimate.
The hole 57 upper end bore d5 that carried out the SiOC film 54 of etched wafer W under the process conditions of comparative example 4 are 143nm, and the groove 58 upper end width d6 of SiOC film 54 are 207nm.On the other hand, when under the process conditions of embodiment 4-1 SiOC film 54 being carried out etching, the hole 57 upper end bore d5 of SiOC film 54 are 123nm, and the groove 58 upper end width d6 of SiOC film 54 are 188nm, confirm the size decreases of hole 57 and groove 58.When carrying out etching under the process conditions of embodiment 4-2, the hole 57 upper end bore d5 of SiOC film 54 become 114nm, and the groove 58 upper end width d6 of SiOC film 54 become 188nm, have also confirmed the size decreases of hole 57 and groove 58.The processing gas that is used for the process conditions of embodiment 4-1 and embodiment 4-2; the oxygen that contains the effect that can bring corrosion Etching mask 51; but in this embodiment; owing to confirm to exist the effect that hole 57 and groove 58 are diminished; so the inventor infers, when main etching; handle contained gaseous plasmaization in the gas, the deposit of hole 55 sidewalls of formation protection Etching mask 51 surfaces, Etching mask 51 and groove 56 sidewalls of Etching mask 51.
Experimental example 5: pre-treatment+etching evaluation test
In the embodiment of experimental example 4 4-2, before SiOC film 54 is carried out etching, under the condition of the experimental example 1-3 in experimental example 1, Etching mask 51 is carried out pre-treatment.Its result and pre-treatment and etched effect are overlapping, and the hole 57 upper end bores of the SiOC film 54 after the etching are 91nm, and the groove 58 upper end width of SiOC film 54 are 165nm.Therefore, just can not hinder this pre-treatment and this etched interaction, can handle wafer W as continuous processing.
Experimental example 6: etched evaluation test
Use pre-treatment wafer W before, with experimental example 4 in the same condition of embodiment 4-2 under, SiOC film 54 is carried out main etching, and the power of upper electrode 4 is made following all changes, the power of research upper electrode 4 is to the influence of the inhibition aspect of the recess extension of SiOC film 54.
Embodiment 6-1
The power of upper electrode 4 is made as 1000W.
Embodiment 6-2
The power of upper electrode 4 is made as 1500W.
Embodiment 6-3
The power of upper electrode 4 is made as 2000W.
Embodiment 6-4
The power of upper electrode 4 is made as 2500W.
Embodiment 6-5
The power of upper electrode 4 is made as 3000W.
Comparative example 6-1
The power of upper electrode 4 is made as 0W.Usually, under 0W, do not produce plasma, but under this example, owing to applied the power of 600W on the lower electrode 31, so, under this condition, also can produce plasma, SiOC film 54 is carried out etching.
Comparative example 6-2
The power of upper electrode 4 is made as 500W.
Experimental result
After SiOC film 54 is carried out etching, use SEM to observe the hole 57 of SiOC film 54 and the section shape of groove 58, measure the upper end bore d5 in hole 57 and the upper end width d6 of groove 58, and apart from the hole 57 surfaces degree of depth h1 and apart from the degree of depth h2 on the surface of groove 58.In this experimental example 6, the power increase of upper electrode 4 is high more, SiOC film 54 is etched must be dark more, and whether the inventor can obtain appropriate evaluation to the groove 58 upper end width d6 of the hole 57 upper end bore d5 by SiOC film 54 in each technology of simple comparison, SiOC film 54 is only suspected.In this example, for gained etching result under each process conditions is carried out relatively, the bore in the hole 57 that increases with etching and the width of groove 58 are respectively divided by the degree of depth after its etching, (the width recruitment r2 of the groove 58 of r1=(d5-d1)/h1), the per unit degree of depth (estimate by r2=(d6-d2)/h2) normalization with the bore recruitment r1 in the hole 57 of the per unit degree of depth.That is, this value representation is formed on the hole 57 on the SiOC film 54, the gradient (teper) the situation value of groove 58, and this value is more little, and is big more to the inhibition effect of extension.
This result as shown in Figure 6.The width recruitment r2 of the bore recruitment r1 in the hole 57 of the per unit degree of depth and the groove 58 of the per unit degree of depth is all along with the increase of the power of upper electrode 4 and reduce more, and this reduction becomes remarkable under the power of upper electrode 4 is increased to situation more than the 1500W.In addition, under 3000W, the recruitment r2 of the width of the bore recruitment r1 in the hole 57 of the per unit degree of depth and the groove 58 of the per unit degree of depth almost becomes 0, promptly represent etching after, the width of the bore in hole 57 and groove 58 does not increase.Because the diameter of wafer W is 300mm, the power that is applied by upper electrode 4 of the per unit area of wafer W is at 0.021W/mm 2(1500W/70685.8mm 2) when above, to 54 etchings of SiOC film the time, we can say that the expansion to recess (hole 57, groove 58 etc.) has very big inhibition effect.
Experimental example 7: etching evaluation experimental
Use the same as with experimental example 6 pre-treatment wafer W before, with the same condition of the embodiment 6-3 of experimental example 6 under, SiOC film 54 is carried out main etching, simultaneously, change CH 3The flow of F gas makes CH 3F gas and CF 4The flow-rate ratio CH of gas 3F/CF 4Be 0～1.2, carry out various variations, research flow-rate ratio CH 3F/CF 4Influence to narrowization of recess of SiOC film 54.
Embodiment 7-1
CH 3The flow of F is made as 10sccm, makes flow-rate ratio CH 3F/CF 4Be 0.2.
Embodiment 7-2
CH 3The flow of F is made as 20sccm, makes flow-rate ratio CH 3F/CF 4Be 0.4.
Embodiment 7-3
CH 3The flow of F is made as 30sccm, makes flow-rate ratio CH 3F/CF 4Be 0.6.
Embodiment 7-4
CH 3The flow of F is made as 40sccm, makes flow-rate ratio CH 3F/CF 4Be 0.8.
Embodiment 7-5
CH 3The flow of F is made as 50sccm, makes flow-rate ratio CH 3F/CF 4Be 1.
Embodiment 7-6
CH 3The flow of F is made as 60sccm, makes flow-rate ratio CH 3F/CF 4Be 1.2.
Comparative example 7
CH 3The flow of F is made as 0sccm, makes flow-rate ratio CH 3F/CF 4Be 0.
Experimental result
6 the same with experiment, SiOC film 54 is carried out etching, try to achieve the width recruitment r2 of the groove 58 of the bore recruitment r1 in hole 57 of the per unit degree of depth and the per unit degree of depth.
This result as shown in Figure 7.The width recruitment r2 of the bore recruitment r1 in the hole 57 of the per unit degree of depth and per unit degree of depth groove 58 is all increasing CH 3The F gas flow, make CH 3F gas and CF 4The flow-rate ratio CH of gas 3F/CF 4At 0.2 (CH 3The flow 10sccm of F gas) reduce under the Yi Shang situation, but at flow-rate ratio CH 3F/CF 4Be 0.4 (CH 3The flow 20sccm of F gas) during the left and right sides, no longer reduces flow-rate ratio CH 3F/CF 4At 1 (CH 3The flow 50sccm of F gas) under the Yi Shang situation, shows the trend that increases a little.In this etching, owing on the sidewall of the groove 56 of the sidewall in the hole 55 of Etching mask 51 and Etching mask 51, form and have the deposit of elching resistant and the etching of SiOC film 54 is carried out simultaneously, therefore, this reaction mechanism is very complicated, also do not find correct reason, but the inventor infers, may be because at CH 3Under the situation that the F gas flow increases, the deposit that dhering strength is weak, elching resistant is low with SiOC film 54 is formed at the top of the top in the hole 57 of SiOC film 54 and the groove 58 of SiOC film 54.But, very little with this growing amount, do not use CH 3The comparative example 7 of F gas is compared, and confirms to have the hole 57 of inhibition SiOC film 54 and the effect that groove 58 enlarges.Because about hole 57 and groove 58 both, flow-rate ratio CH 3F/CF 4Reach 2 (CH 3The F throughput is 100sccm) about, all confirm to have that effect, hence one can see that, flow-rate ratio CH 3F/CF 4Usable range on be limited to 2.
Experimental example 8: pre-treatment+etched evaluation test
Under the process conditions of the embodiment of experimental example 1 1-1, embodiment 1-3, embodiment 1-5, carried out each wafer W of pre-treatment, carried out etching according to embodiment 6-1, the embodiment 6-3 of experimental example 6, the process conditions of embodiment 6-5.That is, in pre-treatment and etching, respectively the power of upper electrode 4 is made various changes, implement experiment.The process conditions of expression pre-treatment and the combination of etched process conditions below.
Embodiment 8-1
After carrying out pre-treatment according to the process conditions (the power 1000W of upper electrode 4) of embodiment 1-1, carry out etching according to the process conditions (the power 1000W of upper electrode 4) of embodiment 6-1.
Embodiment 8-2
After carrying out pre-treatment according to the process conditions (the power 1000W of upper electrode 4) of embodiment 1-1, carry out etching according to the process conditions (the power 2000W of upper electrode 4) of embodiment 6-3.
Embodiment 8-3
After carrying out pre-treatment according to the process conditions (the power 1000W of upper electrode 4) of embodiment 1-1, carry out etching according to the process conditions (the power 3000W of upper electrode 4) of embodiment 6-5.
Embodiment 8-4
After carrying out pre-treatment according to the process conditions (the power 2000W of upper electrode 4) of embodiment 1-3, carry out etching according to the process conditions (the power 1000W of upper electrode 4) of embodiment 6-1.
Embodiment 8-5
After carrying out pre-treatment according to the process conditions (the power 2000W of upper electrode 4) of embodiment 1-3, carry out etching according to the process conditions (the power 2000W of upper electrode 4) of embodiment 6-3.
Embodiment 8-6
After carrying out pre-treatment according to the process conditions (the power 2000W of upper electrode 4) of embodiment 1-3, carry out etching according to the process conditions (the power 3000W of upper electrode 4) of embodiment 6-5.
Embodiment 8-7
After carrying out pre-treatment according to the process conditions (the power 3000W of upper electrode 4) of embodiment 1-5, carry out etching according to the process conditions (the power 1000W of upper electrode 4) of embodiment 6-1.
Embodiment 8-8
After carrying out pre-treatment according to the process conditions (the power 3000W of upper electrode 4) of embodiment 1-5, carry out etching according to the process conditions (the power 2000W of upper electrode 4) of embodiment 6-3.
Embodiment 8-9
After carrying out pre-treatment according to the process conditions (the power 3000W of upper electrode 4) of embodiment 1-5, carry out etching according to the process conditions (the power 3000W of upper electrode 4) of embodiment 6-5.
Experimental result
As mentioned above, each routine SiOC film 54 is carried out pre-treatment and etching, try to achieve the width recruitment r2 of the groove 58 of the bore recruitment r1 in hole 57 of the per unit degree of depth and the per unit degree of depth.
The result is as shown in table 1.According to the result as can be known, (power of the upper electrode 4 in the pre-treatment increases the effect of being confirmed in the experimental example 1, then the width d2 of groove 56 bottoms of the bottom bore d1 in the hole 55 of Etching mask 51 and Etching mask 51 reduces), with the effect of being confirmed among the embodiment 6 (in the etching, the power of upper electrode 4 increases, then the width recruitment r2 of the groove 58 of the bore recruitment r1 in the hole 57 of the per unit degree of depth and the per unit degree of depth reduces) can not hinder the realization of effect separately mutually, but mutual superposition, the bore d5 in the hole 57 of SiOC film 54 and the width d6 of groove 58 reduce.Hence one can see that, is etched in the bore d3 in the hole 55 that reduces because of pre-treatment and the width d4 of groove 56, also can keep in etching after this, carries out etching.In addition, data in this table are expressed as negative value, this is that expression is compared with the bottom size (d1 or d2) of the pattern (hole 55 or groove 56) that carries out pre-treatment Etching mask 51 before, and the size (d5 or d6) of having implemented the pattern (hole 57 or groove 58) of the SiOC film 54 after the etching reduces.
Table 1:(a) the bore recruitment r1 (-) in the hole 57 of the per unit degree of depth
The power (W) of the upper electrode 4 during pre-treatment
1000 ?2000 3000
The power (W) of the upper electrode 4 during main etching ?1000 -0.05 -0.17 -0.23
?2000 -0.05 -0.21 -0.26
?3000 -0.14 -0.23 -0.29
(b) the width recruitment r2 (-) of the groove 58 of the per unit degree of depth
The power (W) of the upper electrode 4 during pre-treatment
1000 2000 3000
The power (W) of the upper electrode 4 during main etching ?1000 -0.13 -0.44 -0.44
?2000 -0.29 -0.44 -0.52
?3000 -0.31 -0.50 -0.53

Claims (12)

1. method of plasma processing, use plasma processing apparatus that substrate is handled, this plasma processing unit has with mutual opposed upper electrode and is connected with one of lower electrode, be used for supplying with first high frequency to handling atmosphere, first high frequency electric source of gaseous plasmaization will be handled, it is characterized in that, comprising:
With the operation of substrate-placing on lower electrode, described substrate has Etching mask at the dielectric film superimposed layer that is made of the film having low dielectric constant that contains silicon and oxygen;
Supply with CF class gas and the CH that contains as the compound of carbon containing and fluorine to handling atmosphere xF yThe operation of the processing gas of gas, wherein, x, y add up to 4 natural number;
Supply with first high frequency to handling atmosphere, will handle gaseous plasmaization, generate plasma, make on the sidewall of deposit attached to the peristome of Etching mask, reduce the operation of opening size; With
After this utilize plasma that described dielectric film is carried out etched operation.
2. method of plasma processing as claimed in claim 1 is characterized in that:
Described first high frequency electric source is connected with upper electrode,
Supply with the second low high frequency of frequency of ratio first high frequency from second high frequency electric source that is connected with lower electrode to handling atmosphere on one side, and supply with bias power, Yi Bian carry out the described operation that reduces opening size to the substrate of mounting on lower electrode.
3. method of plasma processing as claimed in claim 1 or 2 is characterized in that:
The power of first high frequency of supplying with to described upper electrode or lower electrode is 1000W/70685.8mm divided by the quotient of substrate surface area 2More than.
4. as each described method of plasma processing in the claim 1～3, it is characterized in that: CH xF yThe flow-rate ratio of gas and CF class gas is more than 0.05.
5. as each described method of plasma processing in the claim 1～4, it is characterized in that utilizing plasma that dielectric film is carried out etched operation is following operation:
Contain CF to handling the atmosphere supply 4Gas, CH xF yThe operation of the processing gas of gas and nitrogen, wherein, x, y add up to 4 natural number; With
Supply with first high frequency to handling atmosphere, making the power of supplying with described upper electrode or lower electrode is 1500W/70685.8mm divided by the quotient of substrate surface area 2More than, to handle gaseous plasmaization, generate plasma, and supply with the second low high frequency of frequency to handling atmosphere than first high frequency from second high frequency electric source that is connected with lower electrode, supply with bias power to the substrate of mounting on lower electrode, utilize plasma that described dielectric film is carried out etched operation simultaneously.
6. method of plasma processing, use plasma processing apparatus that substrate is handled, this plasma processing unit has: be connected with one of lower electrode with mutual opposed upper electrode, be used for supplying with first high frequency, will handle first high frequency electric source of gaseous plasmaization to handling atmosphere; Be connected with described lower electrode, be used for supplying with the second low high frequency of frequency than first high frequency to handling atmosphere, supply with second high frequency electric source of bias power to the substrate of mounting on lower electrode, it is characterized in that, comprising:
With the operation of substrate-placing on lower electrode, described substrate has Etching mask at the dielectric film superimposed layer that is made of the film having low dielectric constant that contains silicon and oxygen;
Contain CF to handling the atmosphere supply 4Gas, CH xF yThe operation of the processing gas of gas and nitrogen, wherein, x, y add up to 4 natural number; With
Supply with first high frequency to handling atmosphere, the power of feasible described upper electrode of supply or lower electrode is 1500W/70685.8mm divided by the quotient of substrate surface area 2More than, will handle gaseous plasmaization, generate plasma, and supply with second high frequency to handling atmosphere, utilize plasma that described dielectric film is carried out etched operation.
7. as claim 5 or 6 described method of plasma processing, it is characterized in that:
Described CH xF yGas and CF 4The flow-rate ratio of gas is more than 0.2, below 2.
8. a plasma processing apparatus is used for the dielectric film on the substrate is carried out etching, and described substrate has Etching mask at the described dielectric film superimposed layer that is made of the film having low dielectric constant that contains silicon and oxygen, it is characterized in that having:
Process chamber;
Be arranged in the process chamber, and mutual opposed upper electrode and lower electrode;
Be connected with one of lower electrode with described upper electrode, be used for supplying with first high frequency, will handle first high frequency electric source of gaseous plasmaization to handling atmosphere;
Be used in process chamber, supplying with CF class gas and the CH that contains as the compound of carbon containing and fluorine xF yThe unit of the processing gas of gas, wherein, x, y add up to 4 natural number; With
Be used for the control unit that enforcement of rights requires 1,3 or 4 each described method of plasma processing.
9. a plasma processing apparatus is used for the dielectric film on the substrate is carried out etching, and described substrate has Etching mask at the described dielectric film superimposed layer that is made of the film having low dielectric constant that contains silicon and oxygen, it is characterized in that having:
Process chamber;
Be arranged in the process chamber, and mutual opposed upper electrode and lower electrode;
Be connected with described upper electrode, be used for supplying with first high frequency, will handle first high frequency electric source of gaseous plasmaization to handling atmosphere;
Be connected with described lower electrode, be used for supplying with the second low high frequency of frequency of ratio first high frequency, supply with second high frequency electric source of bias power to the substrate of mounting on lower electrode to handling atmosphere;
Be used in process chamber, supplying with CF class gas and the CH that contains as the compound of carbon containing and fluorine xF yThe unit of the processing gas of gas, wherein, x, y add up to 4 natural number; With
Be used for the control unit that enforcement of rights requires 2～4 each described method of plasma processing.
10. as each described plasma processing apparatus in claim 8 or 9, it is characterized in that: have and be used in process chamber, supplying with CF 4The unit of gas, described control unit requires the mode of 5 described method of plasma processing to constitute with enforcement of rights.
11. a plasma processing apparatus is used for the dielectric film on the substrate is carried out etching, described substrate has Etching mask at the described dielectric film superimposed layer that is made of the film having low dielectric constant that contains silicon and oxygen, it is characterized in that having:
Process chamber;
Be arranged in the process chamber, and mutual opposed upper electrode and lower electrode;
Be connected with one of lower electrode with described upper electrode, be used for supplying with first high frequency, will handle first high frequency electric source of gaseous plasmaization to handling atmosphere;
Be connected with described lower electrode, be used for supplying with the second low high frequency of frequency of ratio first high frequency, supply with second high frequency electric source of bias power to the substrate of mounting on lower electrode to handling atmosphere;
Be used in process chamber, supplying with and contain CF 4Gas, CH xF yThe unit of the processing gas of gas and nitrogen, wherein, x, y add up to 4 natural number; With
Be used for the control unit that enforcement of rights requires 6 or 7 described method of plasma processing.
12. storage medium, be applied to plasma processing apparatus, store the computer program of operation on computers, this plasma processing unit has: be connected with one of lower electrode with mutual opposed upper electrode, be used for supplying with first high frequency, will handle first high frequency electric source of gaseous plasmaization to handling atmosphere; Be connected with described lower electrode, be used for supplying with the second low high frequency of frequency than first high frequency to handling atmosphere, supply with second high frequency electric source of bias power to the substrate of mounting on lower electrode, it is characterized in that:
Described computer program is to implement the mode combination step of each described method of plasma processing in the claim 1～7.
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US8252698B2 (en) 2008-09-12 2012-08-28 Tokyo Electron Limited Substrate processing method
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