CN100578798C - Sensing chip structure with overlapping pattern layer, sensing chip encapsulation and preparation method - Google Patents
Sensing chip structure with overlapping pattern layer, sensing chip encapsulation and preparation method Download PDFInfo
- Publication number
- CN100578798C CN100578798C CN200710111181A CN200710111181A CN100578798C CN 100578798 C CN100578798 C CN 100578798C CN 200710111181 A CN200710111181 A CN 200710111181A CN 200710111181 A CN200710111181 A CN 200710111181A CN 100578798 C CN100578798 C CN 100578798C
- Authority
- CN
- China
- Prior art keywords
- sensor chip
- pattern layer
- overlapping pattern
- chip structure
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a sensing chip structure with a covering pattern layer, a sensing chip package combined with the sensing chip structure, and a manufacturing method thereof. The sensing chip structure comprises a sensing chip, and a covering pattern layer arranged surrounding the periphery of an active region on an active surface thereof. The sensing chip structure with the covering pattern layer can be array-bonded in batches, electronically coupled with a carrier and then packaged in a centralized way. During package, the top of the covering pattern layer can be abutted against the inner surface of a package mold, so that the packaging material covering the sensing chip is stopped on the peripheral surface of the covering pattern layer and bonded therewith, thereby forming an opening space on the surface of the active region of the sensing chip. The inventive manufacturing method can omit the step of removing the sealant on the surface of the active region.
Description
Technical field
The present invention relates to a kind of sensor chip structure, sensor chip structure dress and preparation method thereof, relate in particular to a kind of overlapping pattern layer structure that on the zone of action of sensor chip, forms, with with sealing bonding, and in overlapping pattern layer, form the structure in a space and preparation method thereof.
Background technology
Present global consumer electronic product, as the wrist-watch sphygmomanometer, mobile phone or the like product all has manometric successful Application example to exist, application demand based on before-mentioned products, directions such as low-pressure meter module component cost and low-pressure meter module volume, it is the test that existing pressure gauge module structure dress is faced, because the cost great majority of single pressure sensor concentrate on structure and dress up on this, present stage, the whole world was on the gimmick of design with respect to the pressure sensor assembling structure, follow preforming pin support and the two-part manufacture method pattern that adds cover cap mostly, and the discrepancy in the patent comprises the form of preforming pin support each other, the location definition of testing pressure source entrance hole and referenmce atomsphere pressure through hole, in whole prior art patent, US 5 as U.S. Patent bulletin, 852,320, US 4,655,083, US 5,465,626, US 6,066,882, US 4,563,697 and US 5,209,120 concentrate on the mode of individual single processing mostly, carry out the structure dress manufacture method of relative pressure sensing module, as for aspect the form of preforming pin support, be divided into the outer metal pins that draws of metal (TO-can) plastics support haply, aspect the electrical interface pin welding form of whole pressure-sensing structure dress module, two classification of pin (through hole) and surface adhering (SMT, Surface MountTechnology) are arranged substantially.
In addition, recently increasing pressure sensing module is all imported one dimension lots processed gimmick, the practice is the mold forming of arranging in pairs or groups one processing more ripe with the strip base material, come the production production capacity of increase pressure module, its strip substrate material commonly used is printed circuit board (PCB) or metal flower stand (lead-frame).Therefore basically the mold forming manufacture method has mass-produced characteristic in essence, dresses up advantage on this reducing the module structure, and generally accepted and admit by global structure dress specialized vendor, also be to reduce structure to dress up this a effective means.But chip sensing design requirement based on pressure sensing module, the through-hole structure of sensor chip and testing pressure source entrance hole and referenmce atomsphere pressure, must before or after the mold forming manufacture method, discharge or machine-shaping, with the design in this regard of the present whole world generally speaking, can be divided into three main paties, a kind of is before the extrusion molding of mold forming, need the position antetype of through hole to occupy at sensor chip with an interpolation projection mould in advance in advance, by the time after the liquid plastic cladding of mold forming fills up die cavity space and cooling curing, be inserted in the interpolation object of mould inside in original, along with the structure that separates simultaneously from modulo operation of mold forming is adorned main body, therefore the associated sensed channel space of sensing module is that nature forms, US 5,897,338 as U.S.'s bulletin communique.
Another kind of gimmick is that the processing of so-called back discharges gimmick; the spirit of this kind mode is after the machine-shaping of whole sensing module mold forming; use the etched manufacture method mode of strong acid then; impose the solution of strong acid at the required through hole relevant position of sensor chip; force and originally to remove with the acid etching manufacture method of chemical reaction with the plastic material of moulding; till getting through sensor chip or related chip top protective layer; discharge with this sense channel space that sensor chip is required; relevant patent structure example such as US 4; 823; 605 and US 6,379,988.This U.S.'s patent 6; 379; 988 to see also Figure 1A be its micro electronmechanical pressure reduction sensing element assembling structure 10; wherein, before microcomputer sensing and measuring element 11 moulds envelope manufacture method, in order to protect miniature sensing of microcomputer sensing and measuring element 11 upper surfaces or brake structure 12; in advance at microcomputer sensing and measuring element surface coverage one sacrifice layer protective layer 13; and this sacrifice layer protective layer 13 is after mould envelope manufacture method, and whole imbedding in the mould closure material 14 is so need to open a window above this miniature sensing or brake structure 12.Its window gimmick such as Figure 1B and Fig. 1 C illustrate, for adopting the different strong acid se of secondary mode, at first load on the zone of spraying sour manufacture method on the mould closure material 14 with limitation with first liner 15, again with first strong acid, 16 ses, after suitable acid etching time control, the mould closure material 14 of contact first strong acid 16 is removed, made sacrifice layer protective layer 13 expose out; Load on the mould closure material open area 14 first time with second liner 17 afterwards; again with second strong acid, 18 ses; after the control of suitable acid etching time, sacrifice layer protective layer 13 is removed, contact with the miniature sensing that discharges microcomputer sensing and measuring element 11 or brake structure 12 and with atmosphere.
At last a kind of is mixing manufacture method gimmick, this kind manufacture method mode mainly is the synthesis of comprehensive preforming pin support two-part manufacture method pattern and one dimension lots processed gimmick, sensing through hole structure dress mode at sensor chip, be to continue to use the form that adds cover cap to carry out, but the moulding approach of whole sensing module then is to adopt the mold forming form of one processing to come machine-shaping, that is to say that sensor chip is behind the one mold forming, be engaged to the headspace depression place of forming module again, there is the cover cap that adds of pre-opening doing back technology assembling at last with the sensing module body, relevant patent structure such as US 6,927,482 and US6,401,545.
Comprehensive aforementioned each manufacture method, the technology pattern of single indivedual processing is a big secret worry on production output (throughput), expensive relatively in addition preforming pin plastic base element, make the matter worse beyond doubt on the cost for integral module, therefore with existing global module processing structure, want the progress that on the integral module structure is dressed up this, has greatly improved, sizable possibly degree of difficulty, therefore the existing structure dress of escape form is that the problem that a necessity is carried out also is the means an of necessity on head it off.On the other hand, the module of jack type and two pin interface forms of metal pins flower stand (lead frame), not only need specific pressure meter module body floor space also to want big leg area (foot print), have its limit to exist for dwindling of integral module overall dimensions.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of sensor chip structure of tool overlapping pattern layer, sensor chip structure to adorn and preparation method thereof, with when sensor chip is encapsulated, can form a space naturally on its zone of action.
For realizing above-mentioned purpose of the present invention, the sensor chip structure that the invention provides the tool overlapping pattern layer comprises: a sensor chip and an overlapping pattern layer, sensor chip, it has an active surface and a brilliant back of the body, active surface has a zone of action and a plurality of weld pad, overlapping pattern layer is arranged on the active surface of sensor chip, and is surrounded on periphery, the zone of action.
The brilliant back of the foregoing description also has a depression, and the crystalline substance of the sensor chip back of the body also has a support structure layers, covers the brilliant back of the body, and has a hole on the support structure layers.
The foregoing description can be applicable to a kind of sensor chip structure dress, also comprise the sensor chip of above-mentioned tool overlapping pattern layer bonding and be electrically coupled on the carrier thereafter, and when sealing, prop up the last inner die surface of dies with epoxy compound with the overlapping pattern layer end face, to form a runner boundary, adhesive material is combined with the overlapping pattern layer peripheral surface, and overlapping pattern layer inside then is formed naturally the action space of the zone of action of a confession sensor chip.
The loading of the overlapping pattern layer of this case the foregoing description can be by the thick film shaping manufacture method of general usefulness, as steel plate printing, rotary coating (spin-coating), the hot pressing of preformation plastic film ... or the like.
And, the invention provides a kind of manufacture method of sensor chip structure of tool overlapping pattern layer, comprise: a sensing wafer is provided, this sensing wafer has a surface, this sensing wafer has a plurality of sensor chips, those sensor chips have an active surface and a brilliant back of the body respectively, and this active surface has a zone of action; Form a dyke layer in this sensing wafer surface; This dyke layer of patterning is to establish formation one overlapping pattern layer structure in the zone of action of those sensor chips and the overseas enclosure of pad zone of those sensor chips; And cut this sensing wafer, to form a plurality of sensor chip structures with overlapping pattern layer structure.
And, for achieving the above object, the invention provides a kind of manufacture method of sensor chip structure dress of tool overlapping pattern layer, comprise: the sensor chip structure that at least one tool overlapping pattern layer structure is provided; Bond this sensor chip structure in a carrier upper surface, and this carrier upper surface has a plurality of weld pads; Those weld pads of this sensor chip structure of electric property coupling and this carrier upper surface form a structure piece installing; Insert this structure piece installing in an encapsulating mould, a patrix of this encapsulating mould pushes against this overlapping pattern layer end face; Inject adhesive material in this encapsulating mould, to form a packaging body, the encapsulating material of this packaging body coats to this overlapping pattern layer periphery, and in the inner open space that forms of this overlapping pattern layer; Open this encapsulating mould and take out this packaging body, and cut this packaging body to form a plurality of sensor chip structure dresses.
The effect that this case the foregoing description is had is: the overlapping pattern layer structure of this case can batch formation in wafer, and using when the sensor chip structure is adorned, mode that also can batch two dimension processing is loaded on carrier with sensor chip, unification once forms sealing again, can simplify manufacture method in a large number.And the overlapping pattern layer structure must not remove after sealing, and the hollow region of its overlapping pattern layer inside is for reserving the channel space of sensor chip and extraneous sensing interaction future.
Description of drawings
Figure 1A, Figure 1B and Fig. 1 C are the structure schematic flow sheet of the microcomputer sensing and measuring element zone of action opening manufacture method of prior art;
Fig. 2 A is a sensor chip structure cutaway view of the present invention;
Fig. 2 B is the via embodiment cutaway view of sensor chip structure of the present invention;
Fig. 2 C has the cutaway view of depression for the brilliant back of the body of the sensor chip of sensor chip structure of the present invention;
Fig. 2 D has depression for the brilliant back of the body of the sensor chip of sensor chip structure of the present invention and adds the cutaway view of the supporting bracket in carrier hole;
Fig. 2 E is the vertical view of Fig. 2 D;
Fig. 3 A is sensor chip structure dress cutaway view of the present invention;
Fig. 3 B has the cutaway view of depression for the brilliant back of the body of sensor chip of sensor chip structure dress embodiment of the present invention;
Fig. 3 C has the cutaway view that depression and carrier have through hole for the brilliant back of the body of sensor chip of sensor chip structure of the present invention dress embodiment;
Fig. 4 A to Fig. 4 C is the cutaway view that is applied to substrate embodiment of the present invention;
Fig. 5 A to Fig. 5 C is the cutaway view that is applied to lead frame embodiment of the present invention;
Fig. 6 is the cutaway view that is applied to three-dimensional subsystem sensing architecture of the present invention;
Fig. 7 is the cutaway view of additional dustproof mechanism of the present invention;
Fig. 8 is the cutaway view of additional optical filtering/light concentrating mechanisms of the present invention;
Fig. 9 A to Fig. 9 D is the structure schematic flow sheet of the manufacture method of the sensor chip structure dress of tool overlapping pattern layer of the present invention;
Fig. 9 E forms the structure schematic flow sheet of depression for the structure of the technology of the sensor chip structure dress of tool overlapping pattern layer of the present invention;
Fig. 9 F loads the structure schematic flow sheet of support structure layers and perforate for the structure of the manufacture method of the sensor chip structure dress of tool overlapping pattern layer of the present invention; And
Figure 10 A to Figure 10 E is the structure schematic flow sheet of the manufacture method of the sensing module of tool overlapping pattern layer of the present invention.
Wherein, Reference numeral:
[prior art part]
10: sensing element assembling structure 11: sensing element
12: miniature sensing or brake structure 13: sacrifice layer protective layer
14: 15: the first liners of mould closure material
17: the second liners of 16: the first strong acid
18: the second strong acid
[part of the present invention]
20,20a, 20b, 20c: sensor chip structure 201: sensing wafer
202: surface 21: sensor chip
211: active surface 2111: the zone of action
21111: peripheral 2112: weld pad
212: the brilliant back of the body 2121: depression
2122: support structure layers 2123: hole
2124: hole 2125 electrically conducts: bottom pads
30: overlapping pattern layer 301: the dyke layer
31: peripheral surface 32: interior zone
40,40a, 40b: the sensor chip structure adorns 41: carrier
41a: lead frame 412: through hole
50: packaging body 51: encapsulating material
60: encapsulating mould 60a: the encapsulating mould patrix
60b: encapsulating mould counterdie A, B, C, D, E, F, G, H, I: sensing module
A1: pit b1:O type ring
C1: skirt g1: Application Specific Integrated Circuit
H1: dustproof machine-processed i1: filter or light concentrating mechanisms
Embodiment
Now conjunction with figs. is described in detail as follows preferred embodiment of the present invention.
See also shown in Fig. 2 A and Fig. 2 D, the sensor chip structure 20 of tool overlapping pattern layer of the present invention, it comprises: a sensor chip 21 and an overlapping pattern layer 30, its sensor chip 21 has an active surface 211 and a brilliant back of the body 212, active surface 211 has a zone of action 2111 and a plurality of weld pad 2112, overlapping pattern layer 30 is arranged on the active surface 211 of sensor chip 21, and is surrounded on the periphery 21111 of the zone of action 2111, and its interior zone 32 is a hollow.
The continuous via embodiment cutaway view that please refer to Fig. 2 B sensor chip structure of the present invention.Weld pad among its sensor chip structure 20a can also have the hole 2124 that electrically conducts for 2112 times and be through to the brilliant back of the body 212, and the brilliant back of the body 212 corresponding to each 2124 position, hole and dispose a bottom pads 2125 of electrically conducting, bottom pads 2125 also utilizes a plain conductor to connect with the hole 2124 that electrically conducts.
Continuous Fig. 2 C and Fig. 2 D of please refer to.In the foregoing description, on the crystalline substance of some sensor chip 21 back of the body 212, also can be provided with a depression 2121, and form sensor chip structure 20b.And behind the crystalline substance back of the body 212 formation depressions 2121, its overall structure rigidity reduces, so also can carry on the back and form a support structure layers 2122 on 212 again at crystalline substance, and formation sensor chip structure 20c, have the position of a hole 2123 on its support structure layers 2122 corresponding to depression 2121, and support structure layers 2122 can cover the brilliant back of the body 212, to increase the rigidity of structure.Fig. 2 E is the vertical view of Fig. 2 D.
In the above-described embodiment, further execution mode comprises that also each of this overlapping pattern layer has opening corresponding to those bond pad locations.
Please refer to shown in Fig. 3 A, sensor chip structure of the present invention is adorned 40 embodiment, with above-mentioned sensor chip structure 20, bonds and is electrically coupled on the upper surface 411 of a carrier 41, and form a packaging body 50 and coat sensing chip structure 20 and carrier 41 upper surfaces 411.
Please refer to shown in Fig. 3 B.Sensor chip structure of the present invention dress 40a embodiment with above-mentioned sensor chip structure 20a, bonds and is electrically coupled to the upper surface 411 of a carrier 41.
Shown in Fig. 3 C.The embodiment of Fig. 3 B also can be provided with a through hole 412 corresponding to depression 2121 positions on the carrier 41 as described above, makes to form depression 2121 and through hole 412 intercommunications, and forms sensor chip structure dress 40b embodiment of the present invention.
Above-mentioned sensor chip structure dress 40b embodiment, the sensor chip structure 20a that it used also can use the sensor chip structure 20b that loads a support structure layers 2122.
Above-mentioned sensor chip structure adorns 40, and 40a, 40b can be applicable on the structure of some not same-actions, so as to forming various different sensing module:
Shown in Fig. 4 A, its sensing module A embodiment uses the sensor chip structure dress 40b embodiment of support structure layers 2122 (or be loaded with), and encapsulating material 51 tops of sealing are surpassed overlapping pattern layer 30 end faces, and the zone also forms the space of a pit a1 more than overlapping pattern layer 30 end faces.
Shown in Fig. 4 B, its sensing module B embodiment uses the sensor chip structure dress 40b embodiment of support structure layers 2122 (or be loaded with), and is embedded with O type ring b1 on packaging body 50.
Shown in Fig. 4 C, its sensing module C embodiment uses the sensor chip structure dress 40b embodiment of support structure layers 2122 (or be loaded with), and forms a skirt c1 draw admittance outside forming on packaging body 50.Above-mentioned sensing module A, B, among the C embodiment, its carrier 41 also can be to have through hole 412 or not to have a through hole 412 for entity.Certainly, when carrier 41 was not had through hole 412, sensor chip structure dress 40b then was not loaded with support structure layers 2122.
Shown in Fig. 5 A, its sensing module D embodiment uses sensor chip structure 20c (or sensor chip structure 20b) to bond and electrically conduct on a lead frame 41a, and forms a packaging body 50.And its lead frame 41a also can have the different size aspect, as the sensing module E embodiment of Fig. 5 B, and the sensing module F embodiment of Fig. 5 C.
Above-mentioned sensing module D, E, among the F embodiment, its lead frame 41a also can be to have through hole 412 or not to have a through hole 412 for entity, and when lead frame 41a was not had through hole 412, it can use sensor chip structure 20b.
As shown in Figure 6, its sensing module G embodiment uses the sensor chip structure dress 40b embodiment of support structure layers 2122 (or be loaded with) to bond and electrically conduct in an Application Specific Integrated Circuit (ApplicationSpecific Integrated Circuit; ASIC) on the element g1, and the Application Specific Integrated Circuit element also is electrically coupled to carrier 41, and with a packaging body 50 encapsulation vehicle 41, Application Specific Integrated Circuit element g1 and sensor chip structure dress 40b the embodiment of support structure layers 2122 (or be loaded with).
As shown in Figure 7, its sensing module H embodiment uses additional dustproof mechanism on overlapping pattern layer 30 end faces of the sensor chip structure dress 40b embodiment of support structure layers 2122 (or be loaded with), can be that plastic weaving, paper are weaved cotton cloth, dustproof isolation filter discs such as fiber cloth or metal fine-structure mesh, to keep the preferable operating state of the sensor chip structure dress 40b embodiment of support structure layers 2122 (or be loaded with).
As shown in Figure 8, its sensing module I embodiment uses additional the optical filtering or light concentrating mechanisms on overlapping pattern layer 30 end faces of the sensor chip structure dress 40b embodiment of support structure layers 2122 (or be loaded with), can be Polarizer, filter, solar panel etc., to cooperate the running of the sensor chip structure dress 40b embodiment of support structure layers 2122 (or be loaded with).
Continuous Fig. 9 A to Fig. 9 D that please refer to.The steps include: to provide a sensing wafer 201, it has a surface 202, and sensing wafer 201 has a plurality of sensor chips 21, and sensor chip 21 has an active surface 211 and a brilliant back of the body 212 respectively, and active surface has a zone of action 2111 (step S10); Form a dyke layer 301 in sensing wafer 201 surfaces (step S11); With dyke layer 301 patterning, make it have peripheral surface 31 and hollow interior region 32, to establish formation one overlapping pattern layer, 30 structures (step S12) in the zone of action 2111 of sensor chip 21 and periphery 21111 circles of weld pad 2112; Cutting unit sensing wafer 201 is to form a plurality of sensor chip structures 20 (step S13) with overlapping pattern layer 30 structures.
Please refer to shown in Fig. 9 E.In the foregoing description, these dyke layer 301 steps of patterning (being step S12) afterwards, cutting sensing wafer step (being step S13) before, comprise that also one forms the step (be step S12a) of a depression 2121 in the crystalline substance back of the body 212 of each sensor chip 21.Certainly, in above-mentioned formation one depression 2121 steps (being step S12a) afterwards, also comprise the support structure layers 2122 that forms a rigid material layer in the back side of each sensor chip 21, and be provided with hole 2123, shown in Fig. 9 F in support structure layers 2122 corresponding depressions 2121 positions.
Please refer to Figure 10 A to Figure 10 E again.Its step comprises: the sensor chip structure 20a (step S20) that at least one tool overlapping pattern layer structure is provided; 20b is in a carrier 41 upper surfaces for bonding sensor chip structure, and carrier 41 upper surfaces have a plurality of weld pads (step S21); Electrically connect the weld pad (step S22) of sensor chip structure 20b and carrier 41 upper surfaces; Insert above-mentioned sensor chip structure 20b and carrier 41 in an encapsulating mould 60, encapsulating mould patrix 60a pushes against overlapping pattern layer 30 end faces, make adhesive material 51 only can be fills up to overlapping pattern layer 30 peripheral surfaces 31 and can't flow into the interior zone 32 of overlapping pattern layer 30, if possible, encapsulating mould counterdie 60b can with the lower surface of carrier 41 fit (step S23), when being a lead frame 41a as if carrier 41 certainly, not lower surface applying with it of its encapsulating mould counterdie 60b; Inject adhesive material 51 in encapsulating mould 60, to form a packaging body 50, the encapsulating material 51 of packaging body 50 coats to overlapping pattern layer 30 peripheries, forms an open space (step S24) in its interior zone 32; And cutting packaging body 50 is to form a plurality of sensor chip structure dress 40a (step S25).
Certainly, before above-mentioned carrier 41 is provided, can form a through hole 412 on the carrier 41, to be fit to the utilization of specific sensor chip structure dress 40a in advance.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; being familiar with those of ordinary skill in the art ought can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (17)
1, a kind of sensor chip structure of tool overlapping pattern layer is characterized in that, comprises:
One sensor chip, it has an active surface and a brilliant back of the body, and this active surface has a zone of action and a plurality of weld pad; And
One overlapping pattern layer, for defining the sensing zone of action scope of this sensor chip, it is arranged on this active surface of this sensor chip, and is surrounded on this zone of action peripheral surface, when preventing that described sensor chip is packed, adhesive material flows into the described zone of action.
2, the sensor chip structure of tool overlapping pattern layer according to claim 1 is characterized in that, each of this overlapping pattern layer has opening corresponding to those bond pad locations.
3, the sensor chip structure of tool overlapping pattern layer according to claim 1 is characterized in that, this crystalline substance back also has a depression.
4, the sensor chip structure of tool overlapping pattern layer according to claim 3, it is characterized in that this crystalline substance back of the body of this sensor chip also has a support structure layers, covers this crystalline substance back of the body, and this support structure layers also has a hole, this hole and corresponding to this sensor chip depression position.
5, the sensor chip structure of tool overlapping pattern layer according to claim 4 is characterized in that, this support structure layers comprises glass, silicon wafer, metal or reinforced plastics sheet rigid material.
6, the sensor chip structure of tool overlapping pattern layer according to claim 1, it is characterized in that, those weld pads below also has the hole that electrically conducts respectively and is through to this crystalline substance back of the body, and should crystalline substance the back of the body corresponding to each hole site and dispose a bottom pads of electrically conducting, this bottom pads also utilizes a plain conductor to connect with this hole that electrically conducts.
7, a kind of sensor chip structure dress in conjunction with the described sensor chip structure of claim 1 comprises:
One carrier has a upper surface;
One this sensor chip structure, its bonding also is electrically coupled on this carrier upper surface; And
One packaging body, it coats this carrier, this sensor chip and this overlapping pattern layer peripheral surface.
8, sensor chip structure dress according to claim 7 is characterized in that, this crystalline substance back of the body also has a depression.
9, sensor chip structure dress according to claim 7 is characterized in that this carrier also includes a through hole, and this through hole is corresponding to the depression of this sensor chip.
10, sensor chip structure dress according to claim 7 is characterized in that this carrier is a printed circuit board (PCB) or a lead frame.
11, sensor chip structure according to claim 7 dress is characterized in that, this sensor chip structure also comprises bonding and electric property coupling one Application Specific Integrated Circuit, and this Application Specific Integrated Circuit also bonds and is electrically coupled to this carrier upper surface.
12, sensor chip structure according to claim 11 dress is characterized in that, this sensor chip also with this carrier electric property coupling.
13, a kind of manufacture method of sensor chip structure of tool overlapping pattern layer comprises:
One sensing wafer is provided, and this sensing wafer has a surface, and this sensing wafer has a plurality of sensor chips, and those sensor chips have an active surface and a brilliant back of the body respectively, and this active surface has a zone of action;
Form a dyke layer in this sensing wafer surface;
This dyke layer of patterning is to establish formation one overlapping pattern layer structure in the zone of action of those sensor chips and the overseas enclosure of pad zone of those sensor chips; And
Cut this sensing wafer, to form a plurality of sensor chip structures with overlapping pattern layer structure.
14, the manufacture method of the sensor chip structure of tool overlapping pattern layer according to claim 13; it is characterized in that; after this dyke layer step of this patterning; and before this sensing wafer step of this granulating, comprise that also one forms the step of a depression in the crystalline substance back of the body of each those sensor chip.
15, the manufacture method of the sensor chip structure of tool overlapping pattern layer according to claim 14, it is characterized in that, also be contained in this and form a depression after the step of the crystalline substance back of the body of each those sensor chip, form the back side of the supporting construction of a rigid material layer in each those sensor chip.
16, the manufacture method of a kind of sensor chip structure of tool overlapping pattern layer dress comprises:
The sensor chip structure of at least one tool overlapping pattern layer structure is provided;
Bond this sensor chip structure in a carrier upper surface, and this carrier upper surface has a plurality of weld pads;
Those weld pads of this sensor chip structure of electric property coupling and this carrier upper surface form a structure piece installing;
Insert this structure piece installing in an encapsulating mould, a patrix of this encapsulating mould pushes against this overlapping pattern layer end face;
Inject adhesive material in this encapsulating mould, to form a packaging body, the encapsulating material of this packaging body coats to this overlapping pattern layer periphery, and in the inner open space that forms of this overlapping pattern layer;
Open this encapsulating mould and take out this packaging body, and
Cut this packaging body to form a plurality of sensor chip structure dresses.
17, the manufacture method of the sensor chip structure of tool overlapping pattern layer according to claim 16 dress, it is characterized in that, this carrier also comprises a through hole, and when this injects adhesive material in this encapsulating mould step, use the protrusion piece of the counterdie of this encapsulating mould to withstand this through hole, so that adhesive material is in the space that exposes this through hole behind mould.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710111181A CN100578798C (en) | 2007-06-14 | 2007-06-14 | Sensing chip structure with overlapping pattern layer, sensing chip encapsulation and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710111181A CN100578798C (en) | 2007-06-14 | 2007-06-14 | Sensing chip structure with overlapping pattern layer, sensing chip encapsulation and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101325204A CN101325204A (en) | 2008-12-17 |
| CN100578798C true CN100578798C (en) | 2010-01-06 |
Family
ID=40188642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710111181A Expired - Fee Related CN100578798C (en) | 2007-06-14 | 2007-06-14 | Sensing chip structure with overlapping pattern layer, sensing chip encapsulation and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100578798C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109253697A (en) * | 2017-07-13 | 2019-01-22 | 台濠科技股份有限公司 | The sensing wafer structure of optics ruler reading head |
| CN107966236A (en) * | 2018-01-18 | 2018-04-27 | 深圳市永盟电子科技限公司 | Pressure sensor, sphygmomanometer and pressure sensor manufacture method |
| CN114039261B (en) * | 2021-11-09 | 2024-05-24 | 佛山宏嘉昌电子有限公司 | Manufacturing process of adjustable soldering leg conductive rubber connector |
-
2007
- 2007-06-14 CN CN200710111181A patent/CN100578798C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101325204A (en) | 2008-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3630447B2 (en) | Manufacturing method of solid-state imaging device | |
| US7242068B2 (en) | Photosensitive semiconductor package, method for fabricating the same, and lead frame thereof | |
| US7791181B2 (en) | Device structure with preformed ring and method therefor | |
| US20060255435A1 (en) | Method for encapsulating a semiconductor device and semiconductor device | |
| CN101241890B (en) | Chip package structure and its making method | |
| US20080105941A1 (en) | Sensor-type semiconductor package and fabrication | |
| CN107742630A (en) | Image sensor packaging structure | |
| US11355423B2 (en) | Bottom package exposed die MEMS pressure sensor integrated circuit package design | |
| US6643919B1 (en) | Method of fabricating a semiconductor device package having a core-hollowed portion without causing resin flash on lead frame | |
| JP2001053094A (en) | Resin sealing method and device | |
| US20050253240A1 (en) | Micromechanical component and corresponsing production method | |
| CN100578798C (en) | Sensing chip structure with overlapping pattern layer, sensing chip encapsulation and preparation method | |
| US7060530B2 (en) | Semiconductor package having a resin cap member | |
| KR20140032889A (en) | Manufacturing method of semiconductor device and semiconductor device | |
| CN107527874A (en) | Cavate pressure transducer devices | |
| JP3456983B2 (en) | Method for manufacturing lead frame and resin-encapsulated semiconductor device | |
| JP3425089B2 (en) | Method for manufacturing resin-encapsulated semiconductor device | |
| CN101150889B (en) | Encapsulation structure and its method for computer electric microphone | |
| CN109830477B (en) | Integrated circuit package, manufacturing method thereof and injection molding jig | |
| CN211507610U (en) | Chip module | |
| CN113496978A (en) | Pre-encapsulated frame edge reinforcement structure and manufacturing method thereof | |
| CN213184260U (en) | Packaging structure of chip | |
| CN215496698U (en) | Frame edge reinforcement structure of encapsulating in advance | |
| JP2596606B2 (en) | Resin-sealed semiconductor device and method of manufacturing the same | |
| CN114256279A (en) | Packaging method of CIS chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100106 Termination date: 20210614 |