CN100578593C - Pixel circuit of active organic light-emitting device - Google Patents
Pixel circuit of active organic light-emitting device Download PDFInfo
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- CN100578593C CN100578593C CN200810041540A CN200810041540A CN100578593C CN 100578593 C CN100578593 C CN 100578593C CN 200810041540 A CN200810041540 A CN 200810041540A CN 200810041540 A CN200810041540 A CN 200810041540A CN 100578593 C CN100578593 C CN 100578593C
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- 230000008878 coupling Effects 0.000 claims abstract description 28
- 238000010168 coupling process Methods 0.000 claims abstract description 28
- 238000005859 coupling reaction Methods 0.000 claims abstract description 28
- 239000003990 capacitor Substances 0.000 claims description 20
- 239000011159 matrix material Substances 0.000 abstract description 4
- 230000000452 restraining effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 5
- 229920001621 AMOLED Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
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Abstract
The invention discloses a pixel circuit of an active organic light-emitting device which can effectively restrains the characteristic drift of a TFT used for driving an OLED device in an active matrix driving OLED display device, so as to prolong the service life of the device. The technical scheme provided by the invention comprises a power source wire, a scanning beam of a current line and a scanning beam of a previous line, a data wire, six transistors which are a first transistor to a sixth transistor and comprise a gate electrode, a source electrode and a drain electrode, a OLED, a memory capacitance which is used for keeping written voltage from the data bus, and a coupling capacitance which is used for coupling data voltage signals; wherein, a second electrode of the memory capacitance is connected with the power source wire, a second electrode of the coupling capacitance and the gate electrodes of the first and the fourth transistors are all connected with the first electrode of the memory capacitance. By adopting different TFT devices respectively to set threshold voltage VTH and drive OLED, the pixel circuit of the active organic light-emitting device has the advantage of effectively restraining the characteristic drift of the TFT used for driving the OLED device in the active matrix driving OLED display device, so as to prolong the service life of the device, and no scanning beams is added.
Description
Technical field
The present invention relates to the image element circuit of a kind of organic luminescent device (OLED), relate in particular to the image element circuit of a kind of active organic light-emitting device (AMOLED).
Background technology
Organic luminescent device (OLED) can use passive-matrix (PM) to drive, and also can use active matrix drive (AM).Compare PM and drive, the information capacity that the AM driving has demonstration is bigger, and power consumption is lower, and device lifetime is long, the picture contrast advantages of higher.And the PM driving is applicable to cheaply, simple display device.
The device of being used for of on glass substrate, making active (AM) driving OLED, at present basic adopt thin film transistor (TFT) based on silicon materials (Thin Film Transistor, TFT) device is as amorphous silicon (a-Si) TFT, low temperature polycrystalline silicon (LTPS) TFT, and microcrystal silicon (u-Si) TFT.These TFT devices work long hours can the drift of generating device characteristic to some extent under certain voltage bias state.If do not take certain measure to handle this drift, the electric current of the device drive OLED of occurrence features drift descends, and display device brightness reduces, and can cause the display device premature failure.The TFT of driving OLED is in certain bias state in the course of the work among the AMOLED, the electric stress that this biasing causes can cause the drift of TFT Devices Characteristics, for N type TFT commonly used, topmost characteristic drift is that its threshold voltage (VTH) generally can raise.Therefore, in AMOLED, must carry out particular processing, with reply TFT device attenuation problem.
Reply TFT device attenuation problem has multiple scheme to be suggested, and comprises from external drive circuit and does to drive compensation that image element circuit reasonable in design compensates, and make more stable device or the like.Wherein, the image element circuit that is used for compensation characteristic drift has multiple.Fig. 1 is a prior art image element circuit synoptic diagram, and D1 is an Organic Light Emitting Diode among the figure, and DTFT is an OLED D1 driving transistors, and DCTL is an OLED D1 light emitting control transistor, and Cst is a storage capacitors, and Gn is the current line sweep trace, and TNO is current line second sweep trace, TNO
N-1Be the current line three scan line, DAT is a data line, and VDD is a power lead, and Sw1, Sw2 and Sw3 are respectively the first, the second and the 3rd transistor, and VCTD is the cathode signal of Organic Light Emitting Diode; Fig. 2 is the signal timing diagram of Fig. 1.This circuit utilizes precharge, threshold setting and luminous three phases to finish driving.T1, T2 are respectively first, second stages as shown in Figure 2, and the other times of removing first, second stage in the frame time are the phase III.Phase one T1 plays precharge effect, signal on current line second sweep trace TNO and the current line sweep trace Gn is noble potential simultaneously, the 3rd transistor Sw3 and transistor seconds Sw2 open, and the grid of driving transistors DTFT charges to sufficiently high voltage by power lead VDD by the 3rd transistor Sw3 and transistor seconds Sw2.At subordinate phase T2, the current line second sweep trace TNO becomes electronegative potential, and the 3rd transistor Sw3 closes, driving transistors DTFT grid by Sw2 and these two TFT of DTFT to its source electrode discharge.Because source, the drain electrode of the first transistor Sw1 link to each other with the source electrode of driving transistors DTFT with data line DAT respectively, when reaching VDAT+VTH, driving transistors DTFT grid voltage stops discharge, VDAT is the voltage signal on the data line DAT, and VTH is the threshold voltage of driving transistors DTFT.At this moment, driving transistors DTFT grid voltage VG equals VDAT+VTH and is stored on the storage capacitors Cst.In first, second stage, current line three scan line TNO
N-1Be low-voltage, light emitting control transistor DCTL disconnects, and Organic Light Emitting Diode OLED D1 is not luminous.To the phase III, current line three scan line TNO
N-1Become high voltage, light emitting control transistor DCTL conducting, driving transistors DTFT starts working, and provides electric current to OLED D1.When drift takes place in characteristic, threshold voltage VTH becomes VTH ', because through over-compensation, this moment, driving transistors DTFT grid voltage VG was VDAT+VTH ', therefore the current value that driving transistors DTFT is provided does not have influence substantially, thereby has played the effect of compensation VTH drift.
The problem that foregoing circuit exists is as follows: (1) each pixel needs three line scan signals, and these three signals all need system driving circuit to provide, and have increased the complicacy of system driving circuit; (2) the horizontal scanning line number is more, can take more substrate area, reduces the aperture opening ratio of bottom emission OLED; (3) be in series with three TFT between OLED and the power lead VDD, increased impedance loop, reduced circuit power consumption efficient.
Summary of the invention
Technical matters to be solved by this invention provides a kind of image element circuit of active organic light-emitting device, can effectively suppress the characteristic drift of the TFT of driving OLED device in the active driving OLED display device, and prolonged device lifetime.
Another object of the present invention is to provide the image element circuit of another kind of active organic light-emitting device, can effectively suppress the characteristic drift of the TFT of driving OLED device in the active driving OLED display device, prolonged device lifetime.
The present invention solves the problems of the technologies described above the image element circuit that the technical scheme that adopts provides a kind of active organic light-emitting device, comprising:
One power lead (VDD);
Current line sweep trace (Gn) and previous row sweep trace (Gnm1);
One data line (DAT);
First to the 6th transistor (M1, M2, M3, M4, M5, M6), described each transistor comprises gate electrode, source electrode and drain electrode;
One OLED (D1)
One storage capacitors (Cst) is used to keep the voltage that writes from described data line, and its second electrode is connected in described power lead (VDD);
One coupling capacitance (Ccp) is used for the coupling data voltage signal, and the grid of its second electrode and first, the 4th transistor (M1, M4) is connected in first electrode of described storage capacitors (Cst) jointly;
The first transistor (M1), control the discharge of the gate electrode node of the 4th transistor (M4), its gate electrode is connected with the gate electrode of the 4th transistor (M4), the source electrode of the 3rd transistor (M3) and the drain electrode of transistor seconds (M2), its source electrode is connected in the anode of OLED (D1) with the source electrode of the 4th transistor (M4), and its drain electrode is connected in the source electrode of transistor seconds (M2);
Transistor seconds (M2) is controlled the conducting or the shutoff in the gate electrode node discharge path of the 4th transistor (M4), and the gate electrode of its gate electrode and the 3rd, the 6th transistor (M3, M6) is connected in described previous row sweep trace (Gnm1) jointly;
The 3rd transistor (M3) is that the gate electrode of the 4th transistor (M4) provides charge path, and its drain electrode is connected in described power lead (VDD);
The 4th transistor (M4) drives described OLED (D1), and its drain electrode is connected in described power lead (VDD);
The 5th transistor (M5), writing of control data signal, its gate electrode is connected in described current line sweep trace (Gn), and drain electrode is connected in described data line (DAT), and the source electrode is connected in first electrode of described coupling capacitance (Ccp) with the source electrode of the 6th transistor (M6);
The 6th transistor (M6), for first electrode of coupling capacitance (Ccp) provides the voltage reset path, its drain electrode is connected in described power lead (VDD).
The present invention has also disclosed a kind of image element circuit of active organic light-emitting device, comprises
One power lead (VDD);
Current line sweep trace (Gn) and previous row sweep trace (Gnm1);
One data line (DAT);
First to the 6th transistor (M1, M2, M3, M4, M5, M6), described each transistor comprises gate electrode, source electrode and drain electrode;
One OLED (D1);
One storage capacitors (Cst) is used to keep the voltage that writes from described data line, and its second electrode is connected in the anode of OLED (D1) with the source electrode of described the first, the 4th transistor (M1, M4);
One coupling capacitance (Ccp) is used for the coupling data voltage signal, and the grid of its second electrode and first, the 4th transistor (M1, M4) is connected in first electrode of described storage capacitors (Cst) jointly;
The first transistor (M1), control the discharge of the gate electrode node of the 4th transistor (M4), its gate electrode is connected with the gate electrode of the 4th transistor (M4), the source electrode of the 3rd transistor (M3) and the drain electrode of transistor seconds (M2), its source electrode is connected in the anode of OLED (D1) with the source electrode of the 4th transistor (M4), and its drain electrode is connected in the source electrode of transistor seconds (M2);
Transistor seconds (M2) is controlled the conducting or the shutoff in the gate electrode node discharge path of the 4th transistor (M4), and the gate electrode of its gate electrode and the 3rd, the 6th transistor (M3, M6) is connected in described previous row sweep trace (Gnm1) jointly;
The 3rd transistor (M3) is that the gate electrode of the 4th transistor (M4) provides charge path, and its drain electrode is connected in described power lead (VDD);
The 4th transistor (M4) drives described OLED (D1), and its drain electrode is connected in described power lead (VDD);
The 5th transistor (M5), writing of control data signal, its gate electrode is connected in described current line sweep trace (Gn), and drain electrode is connected in described data line (DAT), and the source electrode is connected in first electrode of described coupling capacitance (Ccp) with the source electrode of the 6th transistor (M6);
The 6th transistor, for first electrode of coupling capacitance (Ccp) provides the voltage reset path, its drain electrode is connected in described power lead (VDD).
The present invention contrasts prior art following beneficial effect: (1) every capable pixel only needs a horizontal scanning line, reduces outside signal, the simplified system driving circuit supplied with to greatest extent; The TFT decreased number of (2) connecting with OLED has improved the efficient of circuit.
Description of drawings
Fig. 1 is a prior art image element circuit synoptic diagram.
Fig. 2 is the signal timing diagram of Fig. 1.
Fig. 3 is an image element circuit synoptic diagram of the present invention.
Fig. 4 is another image element circuit synoptic diagram of the present invention.
Fig. 5 is the signal timing diagram of Fig. 3 and Fig. 4.
Among the figure:
Gn: current line sweep trace DAT: data line
TNO: the current line second sweep trace TNO
N-1: the current line three scan line
VDD: power lead Sw1: the first transistor
Sw2: transistor seconds Sw3: the 3rd transistor
DTFT: driving transistors DCTL: light emitting control transistor
Ccp: coupling capacitance Cst: storage capacitors
M1: the first transistor M2: transistor seconds
M3: the 3rd transistor M4: the 4th transistor
M5: the 5th transistor M6: the 6th transistor
Gnm1: previous row sweep trace VCTD: the cathode signal of Organic Light Emitting Diode
D1: Organic Light Emitting Diode
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
The device TFT that uses in the circuit of the present invention has three electrodes, grid, and second electrode is with third electrode.Can be called source electrode, drain electrode to second, third electrode, also can be called drain electrode and source electrode to second, third electrode, not change the function or the essence annexation of circuit.Owing to the symmetry on electric in the circuit diagram, second and third electrode TFT among the present invention are called drain electrode and source electrode.
Fig. 3 is the image element circuit synoptic diagram of the embodiment of the invention.
See also Fig. 3, this image element circuit of the image element circuit of the embodiment of the invention is by an Organic Light Emitting Diode OLEDD1, coupling capacitance Ccp and storage capacitors Cst, and transistor M1 constitutes to M6.The discharge of the first transistor M1 control data voltage node, its gate electrode is connected with the gate electrode of the 4th transistor M4, the source electrode of the 3rd transistor M3 and the drain electrode of transistor seconds M2, its source electrode is connected in the anode of OLED D1 with the source electrode of the 4th transistor M4, and its drain electrode is connected in the source electrode of transistor seconds M2; Transistor seconds M2 is the conducting or the shutoff in control data node discharge path, and its gate electrode and the 3rd, the 6th transistorized gate electrode are connected in previous row sweep trace Gnm1 jointly; The 3rd transistor M3 provides charge path for the gate electrode node of the 4th transistor M4, and its drain electrode is connected in power lead VDD; The 4th transistor M4 driving OLED D1, its drain electrode is connected in power lead VDD; Writing of the 5th transistor M5 control data signal, its gate electrode is connected in current line sweep trace Gnm1, drain electrode is connected in current column data line DAT, first electrode of source electrode among the source electrode of the 6th transistor M6 is connected in two electrodes of coupling capacitance Ccp; The drain electrode of the 6th transistor M6 is connected in power lead VDD.In the T1 stage shown in Figure 5, the 6th transistor M6 opens, and makes first electrode of coupling capacitance Ccp and power lead VDD form conducting on electric.In the T2 stage shown in Figure 5, data voltage is transmitted to first electrode of coupling capacitance Ccp by the 5th transistor M5, and is coupled to its second electrode simultaneously.Second electrode of coupling capacitance capacitor C cp is connected in the 4th, the gate node of the first transistor, this node links to each other with first electrode of storage capacitors Cst simultaneously, be used for writing the voltage that the back keeps programming to form in the current line data, its second electrode is connected in power lead VDD.
Fig. 4 is another image element circuit synoptic diagram of the embodiment of the invention.
See also Fig. 4, this image element circuit and image element circuit shown in Figure 3 are closely similar, difference is that second electrode of described storage capacitors Cst is not to link to each other with described power lead VDD, but is connected in the anode of OLED D1 with described the first, the 4th transistorized source electrode.
Fig. 5 is the signal timing diagram of Fig. 3 and Fig. 4.
See also Fig. 5, the course of work of image element circuit can be divided into three phases in the embodiment of the invention, is respectively pre-charging stage T1 as shown in Figure 5, threshold voltage memory phase T2, and data voltage write phase T3, all the other times except that the above-mentioned time are that GTG shows the retention time.
At pre-charging stage T1, previous row sweep trace Gnm1 goes up signal effectively (being high voltage), and second, third and the 6th transistor are opened conducting.First electrode of coupling capacitance Ccp is placed in the current potential identical with power lead VDD by the conducting of the 6th transistor M6.The conducting of the 3rd transistor M3 charges to high voltage with first electrode of storage capacitors Cst, thereby the voltage difference of the relative source of the gate electrode that makes the first transistor M1 electrode surpasses its threshold voltage vt h, the first transistor M1 conducting to a certain extent, the voltage above storage capacitors Cst first electrode will be determined by first, second and the 3rd transistorized dividing potential drop situation.The difference of voltage difference Vgs between the first transistor M1 grid, the source electrode and its threshold voltage vt h will determine the conduction status between the first transistor M1 source, the drain electrode.Because near threshold voltage vt h, the size of the equivalent resistance between the first transistor M1 source electrode and the drain electrode and the numerical value of Vgs-Vth are closely related and change acutely, therefore, the Vgs-Vth numerical value change was very little when drift took place threshold voltage vt h.Specifically, when threshold voltage vt h is changed to Vth ', Vgs be changed to Vgs '=Vgs+ (Vth '-Vth).Therefore, the drift degree of threshold voltage vt h stores on first electrode of storage capacitors Cst.
Threshold voltage memory phase T2, previous row sweep trace Gnm1 go up signal and become low-voltage, and second, third and the 6th transistor turn-off.Current line sweep trace Gn goes up signal and becomes high voltage, and the 5th transistor M5 opens conducting, and the signal voltage on the data line DAT is transmitted to first electrode of coupling capacitance Ccp.Because the coupling of Ccp, the change in voltage of Ccp first electrode make its second electrode voltage that the variation of corresponding amplitude take place, changed the voltage of first electrode of the gate electrode voltage of the 4th transistor M4 and storage capacitors Cst.The 4th transistor M4 exports corresponding electric current according to the bias voltage signal of this change, and it is luminous to drive Organic Light Emitting Diode OLED D1.
Data voltage write phase T3, current line sweep trace Gn go up signal and become low-voltage, and the 5th transistor M5 turn-offs.The voltage that is set on the 4th transistor M4 gate electrode relies on storage capacitors Cst to keep.Organic Light Emitting Diode OLED D1 still by the 4th transistor M4 according to the bias voltage that configures in subordinate phase with corresponding current drives.
The present invention has the following advantages with respect to existing image element circuit: (1) every capable pixel only needs a horizontal scanning line, reduces outside signal, the simplified system driving circuit supplied with to greatest extent; (2) the TFT decreased number of connecting with OLED D1 has improved the efficient of circuit.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little modification and perfect, so protection scope of the present invention is when with being as the criterion that claims were defined.
Claims (2)
1, a kind of active organic light-emitting device image element circuit comprises:
One power lead (VDD);
Current line sweep trace (Gn) and previous row sweep trace (Gnm1);
One data line (DAT);
First to the 6th transistor (M1, M2, M3, M4, M5, M6), described each transistor comprises gate electrode, source electrode and drain electrode;
One OLED (D1);
One storage capacitors (Cst) is used to keep the voltage that writes from described data line, and its second electrode is connected in described power lead (VDD);
One coupling capacitance (Ccp) is used for the coupling data voltage signal, and the grid of its second electrode and first, the 4th transistor (M1, M4) is connected in first electrode of described storage capacitors (Cst) jointly;
The first transistor (M1), control the discharge of the gate electrode node of the 4th transistor (M4), its gate electrode is connected with the gate electrode of the 4th transistor (M4), the source electrode of the 3rd transistor (M3) and the drain electrode of transistor seconds (M2), its source electrode is connected in the anode of OLED (D1) with the source electrode of the 4th transistor (M4), and its drain electrode is connected in the source electrode of transistor seconds (M2);
Transistor seconds (M2) is controlled the conducting or the shutoff in the gate electrode node discharge path of the 4th transistor (M4), and the gate electrode of its gate electrode and the 3rd, the 6th transistor (M3, M6) is connected in described previous row sweep trace (Gnm1) jointly;
The 3rd transistor (M3) is that the gate electrode of the 4th transistor (M4) provides charge path, and its drain electrode is connected in described power lead (VDD);
The 4th transistor (M4) drives described OLED (D1), and its drain electrode is connected in described power lead (VDD);
The 5th transistor (M5), writing of control data signal, its gate electrode is connected in described current line sweep trace (Gn), and drain electrode is connected in described data line (DAT), and the source electrode is connected in first electrode of described coupling capacitance (Ccp) with the source electrode of the 6th transistor (M6);
The 6th transistor (M6), for first electrode of coupling capacitance (Ccp) provides the voltage reset path, its drain electrode is connected in described power lead (VDD).
2, a kind of active organic light-emitting device image element circuit comprises:
One power lead (VDD);
Current line sweep trace (Gn) and previous row sweep trace (Gnm1);
One data line (DAT);
First to the 6th transistor (M1, M2, M3, M4, M5, M6), described each transistor comprises gate electrode, source electrode and drain electrode;
One OLED (D1);
One storage capacitors (Cst) is used to keep the voltage that writes from described data line, and its second electrode is with the anode of the source electrode connexon OLED (D1) of described the first, the 4th transistor (M1, M4);
One coupling capacitance (Ccp) is used for the coupling data voltage signal, and the grid of its second electrode and first, the 4th transistor (M1, M4) is connected in first electrode of described storage capacitors (Cst) jointly;
The first transistor (M1), control the discharge of the gate electrode node of the 4th transistor (M4), its gate electrode is connected with the gate electrode of the 4th transistor (M4), the source electrode of the 3rd transistor (M3) and the drain electrode of transistor seconds (M2), its source electrode is connected in the anode of OLED (D1) with the source electrode of the 4th transistor (M4), and its drain electrode is connected in the source electrode of transistor seconds (M2);
Transistor seconds (M2) is controlled the conducting or the shutoff in the gate electrode node discharge path of the 4th transistor (M4), and the gate electrode of its gate electrode and the 3rd, the 6th transistor (M3, M6) is connected in described previous row sweep trace (Gnm1) jointly;
The 3rd transistor (M3) is that the gate electrode of the 4th transistor (M4) provides charge path, and its drain electrode is connected in described power lead (VDD);
The 4th transistor (M4) drives described OLED (D1), and its drain electrode is connected in described power lead (VDD);
The 5th transistor (M5), writing of control data signal, its gate electrode is connected in described current line sweep trace (Gn), and drain electrode is connected in described data line (DAT), and the source electrode is connected in first electrode of described coupling capacitance (Ccp) with the source electrode of the 6th transistor (M6);
The 6th transistor, for first electrode of coupling capacitance (Ccp) provides the voltage reset path, its drain electrode is connected in described power lead (VDD).
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| CN200810041540A CN100578593C (en) | 2008-08-11 | 2008-08-11 | Pixel circuit of active organic light-emitting device |
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| CN200810041540A CN100578593C (en) | 2008-08-11 | 2008-08-11 | Pixel circuit of active organic light-emitting device |
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Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102915699B (en) * | 2011-08-04 | 2015-11-25 | 昆山维信诺显示技术有限公司 | Active oled lighting device |
| CN102708819B (en) | 2012-05-10 | 2014-08-13 | 北京京东方光电科技有限公司 | Pixel drive circuit and drive method, array substrate and display unit thereof |
| CN103198788A (en) * | 2013-03-06 | 2013-07-10 | 京东方科技集团股份有限公司 | Pixel circuit, organic electroluminescence display panel and display device |
| CN103208255B (en) * | 2013-04-15 | 2015-05-20 | 京东方科技集团股份有限公司 | Pixel circuit, driving method for driving the pixel circuit and display device |
| CN103714780B (en) * | 2013-12-24 | 2015-07-15 | 京东方科技集团股份有限公司 | Grid driving circuit, grid driving method, array substrate row driving circuit and display device |
| CN103730089B (en) | 2013-12-26 | 2015-11-25 | 京东方科技集团股份有限公司 | Gate driver circuit, method, array base palte horizontal drive circuit and display device |
| CN103714781B (en) | 2013-12-30 | 2016-03-30 | 京东方科技集团股份有限公司 | Gate driver circuit, method, array base palte horizontal drive circuit and display device |
| TWI518658B (en) * | 2014-10-01 | 2016-01-21 | 友達光電股份有限公司 | Pixel driving circuit |
| CN105161051A (en) | 2015-08-21 | 2015-12-16 | 京东方科技集团股份有限公司 | Pixel circuit and driving method therefor, array substrate, display panel and display device |
| CN105427806B (en) | 2016-01-06 | 2018-10-23 | 京东方科技集团股份有限公司 | Pixel circuit, display base plate and display device, the method for driving display base plate |
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| CN107909966B (en) * | 2017-12-08 | 2020-01-21 | 京东方科技集团股份有限公司 | Pixel driving circuit, driving method thereof and display device |
| CN109036285B (en) * | 2018-06-19 | 2020-07-31 | 南京中电熊猫平板显示科技有限公司 | Pixel driving circuit and display device |
| CN111724733B (en) * | 2020-06-19 | 2021-07-23 | 武汉天马微电子有限公司 | Pixel driving circuit, driving method thereof and display device |
| CN115831047A (en) * | 2020-11-27 | 2023-03-21 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof, display substrate and display device |
| CN112634818B (en) * | 2020-12-23 | 2022-07-29 | 京东方科技集团股份有限公司 | Pixel driving circuit, driving method and display device |
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