CN101814268A - Pixel circuit for improving service life of active matrix organic light-emitting display - Google Patents
Pixel circuit for improving service life of active matrix organic light-emitting display Download PDFInfo
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- CN101814268A CN101814268A CN200910264860A CN200910264860A CN101814268A CN 101814268 A CN101814268 A CN 101814268A CN 200910264860 A CN200910264860 A CN 200910264860A CN 200910264860 A CN200910264860 A CN 200910264860A CN 101814268 A CN101814268 A CN 101814268A
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Abstract
The invention discloses a pixel circuit for improving the service life of an active matrix organic light-emitting display, comprising a first driving thin film transistor, a first switch thin film transistor, a second switch thin film transistor, a third switch thin film transistor and a fourth switch thin film transistor, wherein the first driving thin film transistor is used for driving the organic light-emitting diode to emit light, a grid of the first driving thin film transistor is connected with one end of a storage capacitor, a drain thereof is connected with a source of the fourth switch thin film transistor and a drain of the third switch thin film transistor, and a source thereof is connected with an anode of the organic light-emitting diode; the first switch thin film transistor controls a coupling capacitor to charge gray-level data voltage for the grid of the first driving thin film transistor; the second switch thin film transistor controls the discharge of one end of the coupling capacitor; the third switch thin film transistor controls the grid voltage of the first driving thin film transistor to discharge to threshold voltage; and the fourth switch thin film transistor controls the power line to be connected with the first driving thin film transistor. The pixel circuit effectively compensates the characteristic drift of the driving thin film transistor, greatly prolongs the service life of the active matrix organic light-emitting display.
Description
Technical field
The present invention relates to the flat pannel display field, particularly a kind of image element circuit that improves service life of active matrix organic light-emitting display.
Background technology
Active matrix/organic light emitting display (AMOLED) has the resolution height, and power consumption is lower, and angle of visibility is big, the picture contrast advantages of higher.
Being produced at present on the glass substrate, being used to drive organic light-emitting device thin film transistor (TFT) (TFT), be divided into two classes basically, is respectively amorphous silicon (a-Si) thin film transistor (TFT) (TFT) and low temperature polycrystalline silicon (LTPS) thin film transistor (TFT).This two classes film transistor device long-term work is in drift that can the generating device characteristic under the DC voltage bias state or under the current offset state.If do not take certain measure to handle this drift, the film transistor device drive current of occurrence features drift descends, and causes organic light emitting display brightness to reduce the film transistor device premature failure.Usually for the threshold voltage vt h of thin film transistor (TFT), its numerical value raises.Therefore, in AMOLED, must carry out particular processing, with reply film transistor device attenuation problem.One of the important method of suppression device characteristic drift problem is a design pixel compensation circuit.
Fig. 1 is a kind of traditional image element circuit structure and drive signal sequential chart thereof.This scheme has used two thin film transistor (TFT)s and a capacitor C st to control and the driving OLED device, and wherein Vdata is that this pixel OLED shows the required data voltage of GTG, Vgate[n] be the capable scanning voltage signal of this pixel place n.The working method of image element circuit is as follows: as Vgate[n] when being high level, thin film transistor (TFT) T1 opens, and data voltage Vdata is transferred to the grid of thin film transistor (TFT) T2, i.e. circuit node N by thin film transistor (TFT) T1, be storage capacitors Cst charging simultaneously, this moment, the voltage of node N was Vdata.Data voltage signal Vdata is converted to data current signal Idata by thin film transistor (TFT) T2, and Idata flows through OLED, makes OLED send the light of required GTG brightness.As Vgate[n] when being low level, thin film transistor (TFT) T1 closes, and the voltage Vdata of node N remains unchanged under the effect of storage capacitors Cst, causes Idata to remain unchanged, thus the brightness of OLED can remain to the unlatching of thin film transistor (TFT) T1 next time.
The conventional pixel circuit of above-mentioned Fig. 1 is simple in structure, only needs 2 thin film transistor (TFT)s (TFT) just can work, and the OLED device architecture for bottom emission has the advantage of high aperture.Yet traditional image element circuit structure of above-mentioned Fig. 1 does not solve the characteristic drift problem of film transistor device long-term work under the DC voltage bias state.As not adopting the means of inhibition or compensation film transistor device characteristic drift, can influence the life-span of OLED display greatly.
The means of inhibition film transistor device characteristic drift commonly used mainly are to add anti-phase operating voltage at present; The means of compensation film transistor device characteristic drift mainly are design pixel compensation circuit.Design pixel compensation circuit is the means of AMOLED compensation film transistor device characteristic drift commonly used at present.
Summary of the invention
Goal of the invention: the present invention solves in the AMOLED demonstration, the threshold voltage shift that the film transistor device long-term work produces, thereby influence the problem of OLED device luminosity, a kind of image element circuit that improves service life of active matrix organic light-emitting display has been proposed, this circuit is the characteristic drift of compensation film transistor device effectively, the decay of reply film transistor device causes the too short problem of service life of active matrix organic light-emitting display.
Technical scheme: at the above-mentioned technical matters that will solve, the present invention proposes a kind of image element circuit that improves service life of active matrix organic light-emitting display, comprise power lead, data line, many horizontal scanning lines, Organic Light Emitting Diode, storage capacitors, coupling capacitance, first drive thin film transistors, first switching thin-film transistor, second switch thin film transistor (TFT), the 3rd switching thin-film transistor, the 4th switching thin-film transistor; Wherein:
First drive thin film transistors, it is luminous to drive described Organic Light Emitting Diode, comprises grid, drain electrode and source electrode, an end of described grid and described storage capacitors links to each other, and the other end of storage capacitors connects power lead; Described drain electrode links to each other with the source electrode of described the 4th switching thin-film transistor and the drain electrode of described the 3rd switching thin-film transistor; The anode of described source electrode and described Organic Light Emitting Diode links to each other, the plus earth of Organic Light Emitting Diode;
First switching thin-film transistor, control coupling capacitance are that the grid of first drive thin film transistors charges into luma data voltage;
The second switch thin film transistor (TFT), the end discharge of control coupling capacitance, its grid connects the grid of n-1 horizontal scanning line, the 3rd switching thin-film transistor and the 4th switching thin-film transistor of many horizontal scanning lines respectively;
The 3rd switching thin-film transistor, the grid voltage of controlling first drive thin film transistors is discharged to threshold voltage, and its source electrode links to each other with the grid of first drive thin film transistors and an end of storage capacitors;
The 4th switching thin-film transistor is controlled being connected of described power lead and first drive thin film transistors;
Wherein said power lead links to each other with the drain electrode of described the 4th switching thin-film transistor; Described data line links to each other with the drain electrode of described first switching thin-film transistor; One end of described coupling capacitance links to each other with the source electrode of described first switching thin-film transistor and the drain electrode of second switch thin film transistor (TFT), and the other end of described coupling capacitance links to each other with the grid of described first drive thin film transistors.
Among the present invention, a kind of scheme, described many horizontal scanning lines are n-1 horizontal scanning line and n horizontal scanning line, wherein n is a natural number, n-1 horizontal scanning line control second switch thin film transistor (TFT), the 3rd switching thin-film transistor and the 4th switching thin-film transistor, the n horizontal scanning line is controlled first switching thin-film transistor.The grid of described the 4th switching thin-film transistor connects the n-1 horizontal scanning line respectively, and the grid of second switch thin film transistor (TFT) and the 3rd switching thin-film transistor.
Among the present invention, the another kind of scheme of optimizing is introduced a control signal wire, and control signal line traffic control the 4th switching thin-film transistor is connected with the grid of the 4th switching thin-film transistor.
The source electrode of described all thin film transistor (TFT)s of circuit of the present invention has symmetry with drain electrode on electric, both titles can be exchanged, do not change the function or the essence annexation of circuit, therefore, any one or the source electrode of a plurality of thin film transistor (TFT)s and the conversion of drain electrode still constitute and of the present invention being equal to.
Thinking of the present invention: the line scan signals of (1) multiplexing lastrow, obtain the threshold voltage of drive thin film transistors, and utilize storage capacitors to store, simultaneously the electric charge on the coupling capacitance is discharged, make things convenient for writing of data voltage; (2) data voltage is added on the threshold voltage by coupling capacitance, makes the data current of driving OLED device not influenced by the threshold voltage shift of drive thin film transistors, reach the purpose of compensation drive thin film transistors characteristic drift.
Beneficial effect: the present invention has the following advantages with respect to existing image element circuit: (1) effectively compensates the drive thin film transistors characteristic drift, greatly increases the life-span of active matrix/organic light emitting display; (2) adopt the sweep trace multiplexing structure, every capable pixel only needs a horizontal scanning line, simplified system driving circuit; (3) this circuit can also adopt amorphous silicon (a-Si) thin film transistor (TFT) (TFT) as driving except adopting low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) (TFT) as driving.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is done further to specify, above-mentioned and/or otherwise advantage of the present invention will become apparent.
Fig. 1 a and Fig. 1 b are a kind of traditional image element circuit figure and input oscillogram.
Wherein, T1: first switching thin-film transistor; T2: first drive thin film transistors; D1:OLED device (Organic Light Emitting Diode); Cst: storage capacitors; VDD: power lead; Gate[n]: the n horizontal scanning line; Data: data line; Vgate[n]: the n line scan signals; Vdata: data-signal; N: circuit node N.
Fig. 2 a and Fig. 2 b are circuit diagram and the input oscillograms of a kind of embodiment of the present invention.
Wherein, T1: first switching thin-film transistor; T2: second switch thin film transistor (TFT); T3: the 3rd switching thin-film transistor; T4: the 4th switching thin-film transistor; T5: first drive thin film transistors; The D1:OLED device; Cst: storage capacitors; C1: coupling capacitance; VDD: power lead; Gate[n]: the n horizontal scanning line; Gate[n-1]: the n-1 horizontal scanning line; Data: data line; Vgate[n]: the n line scan signals; Vgate[n-1]: the n-1 line scan signals; Vdata: data-signal; N1: circuit node 1; N2: circuit node 2.
Fig. 3 a and Fig. 3 b are circuit diagram and the input oscillograms of another kind of embodiment of the present invention.
Wherein, T1: first switching thin-film transistor; T2: second switch thin film transistor (TFT); T3: the 3rd switching thin-film transistor; T4: the 4th switching thin-film transistor; T5: first drive thin film transistors; The D1:OLED device; Cst: storage capacitors; C1: coupling capacitance; VDD: power lead; Gate[n]: the n horizontal scanning line; Gate[n-1]: the n-1 horizontal scanning line; EM: control line; Data: data line; Vgate[n]: the n line scan signals; Vgate[n-1]: the n-1 line scan signals; EM[n]: the control signal that n is capable; Vdata: data-signal; N1: circuit node 1; N2: circuit node 2.
Embodiment:
Embodiment 1:
The image element circuit structure that improves service life of active matrix organic light-emitting display of present embodiment comprises power lead VDD, data line Data, many horizontal scanning lines, Organic Light Emitting Diode (OLED device) D1, storage capacitors Cst, coupling capacitance C1, the first drive thin film transistors T5, the first switching thin-film transistor T1, second switch thin film transistor (TFT) T2, the 3rd switching thin-film transistor T3, the 4th switching thin-film transistor T4 shown in Fig. 2 a; Wherein: first drive thin film transistors, it is luminous to drive described Organic Light Emitting Diode, comprises grid, drain electrode and source electrode, an end of described grid and described storage capacitors links to each other, and the other end of storage capacitors connects power lead; Described drain electrode links to each other with the source electrode of described the 4th switching thin-film transistor and the drain electrode of described the 3rd switching thin-film transistor; The anode of described source electrode and described Organic Light Emitting Diode links to each other, the plus earth of Organic Light Emitting Diode; First switching thin-film transistor, control coupling capacitance are that the grid of first drive thin film transistors charges into luma data voltage; The second switch thin film transistor (TFT), the end discharge of control coupling capacitance, its grid connects the grid of n-1 horizontal scanning line, the 3rd switching thin-film transistor and the 4th switching thin-film transistor of many horizontal scanning lines respectively; The 3rd switching thin-film transistor, the grid voltage of controlling first drive thin film transistors is discharged to threshold voltage, and its source electrode links to each other with the grid of first drive thin film transistors and an end of storage capacitors; The 4th switching thin-film transistor is controlled being connected of described power lead and first drive thin film transistors; Wherein said power lead links to each other with the drain electrode of described the 4th switching thin-film transistor; Described data line links to each other with the drain electrode of described first switching thin-film transistor; One end of described coupling capacitance links to each other with the source electrode of described first switching thin-film transistor and the drain electrode of second switch thin film transistor (TFT), and the other end of described coupling capacitance links to each other with the grid of described first drive thin film transistors.
In the present embodiment, described many horizontal scanning lines are n-1 horizontal scanning line Gate[n-1] and n horizontal scanning line Gate[n], wherein n is a natural number, n-1 horizontal scanning line control second switch thin film transistor (TFT), the 3rd switching thin-film transistor and the 4th switching thin-film transistor, the n horizontal scanning line is controlled first switching thin-film transistor.The grid of described the 4th switching thin-film transistor connects the n-1 horizontal scanning line respectively, and the grid of second switch thin film transistor (TFT) and the 3rd switching thin-film transistor.
Thin film transistor (TFT) T1, T2, T3, T5 are N type thin film transistor (TFT) in the present embodiment, and thin film transistor (TFT) T4 is a P type thin film transistor (TFT).Thin film transistor (TFT) T5 is a drive thin film transistors, and for the OLED device provides suitable data electric current I oled, all the other thin film transistor (TFT) T1, T2, T3, T4 are switching thin-film transistor, mainly play on-off action.Signal Vgate[n], Vgate[n-1], the voltage waveform of Vdata is shown in Fig. 2 b.
The course of work of circuit can be divided into three phases in the present embodiment: the phase one is Vgate[n-1] when being high level, the definition threshold voltage vt h stage; Subordinate phase is Vgate[n] when being high level, the data voltage write phase; Phase III is as Vgate[n-1] and Vgate[n] when all being low level, data keep the stage.Vgate[n-1 wherein] be the capable horizontal scanning line signal of n-1, Vgate[n] be the capable horizontal scanning line signal of n.
Phase one, i.e. threshold voltage vt h definition phase, Vgate[n-1] be high level, Vgate[n] be low level.Thin film transistor (TFT) T1, T4 close at this moment, and thin film transistor (TFT) T2, T3 open.The circuit node N1 ground connection of coupling capacitance C1 one end, current potential are zero, and this moment, previous frame was accumulated in the electric charge of this node N1 by thin film transistor (TFT) T2 release.The other end at coupling capacitance C1, be circuit node N2, this place's node charges accumulated discharges by thin film transistor (TFT) T5, finally make grid and the drain electrode of thin film transistor (TFT) T5 be in same current potential, this moment, the current potential at this place was Vth_T5+Vth_oled, wherein Vth_T5 is the threshold voltage of thin film transistor (TFT) T5, and Vth_oled is the pressure drop of OLED device D1, is thin film transistor (TFT) T5 source voltage herein.In this stage, obtain the threshold voltage of drive thin film transistors T5 and be stored on the storage capacitors Cst, be i.e. node N2.
Subordinate phase, i.e. data voltage Vdata write phase, Vgate[n-1] be low level, Vgate[n] be high level.Thin film transistor (TFT) T1, T4 open at this moment, and thin film transistor (TFT) T2, T3 close.Data voltage Vdata writes storage capacitors Cst by thin film transistor (TFT) T1 and coupling capacitance C1, and the current potential at the circuit node N2 place of storage capacitors Cst one end is Vth_T5+Vth_oled+Vdata at this moment.In this stage, thin film transistor (TFT) T5 begins to provide the electric current I oled that shows required GTG to OLED D1, and OLED D1 begins luminous, and the size of electric current is expressed as:
Ioled＝k*(VN2-Vth_T5)^2
Wherein, VN2 is the voltage of node N2, k=(1/2) * (W/L) * Cox*uFE, and W, L, Cox, uFE are respectively the channel width of thin film transistor (TFT) T5, channel length, unit-area capacitance value between channel region and gate electrode, carrier mobility.So electric current I oled is:
Ioled＝k*(Vth_T5+Vth_oled+Vdata-Vth_T5)^2＝k*(Vth_oled+Vdata)^2
As can be seen from the above equation, the threshold voltage of data circuit Ioled and thin film transistor (TFT) T5 is irrelevant, and only relevant with data voltage Vdata, coefficient k and Vth_oled are constant.Therefore, this circuit can effectively suppress the threshold voltage shift of drive thin film transistors T5.
Phase III, promptly data keep stage, Vgate[n-1] and Vgate[n] be all low level.Thin film transistor (TFT) T1, T2, T3 close, and thin film transistor (TFT) T4 opens.This moment drive thin film transistors T5 grid voltage, promptly the voltage of node N2 under the effect of storage capacitors Cst, remains Vth_T5+Vth_oled+Vdata.The data current of OLEDD1 remains k* (Vth_oled+Vdata) ^2 so flow through, up to writing of the data voltage of next frame.In this stage, OLED device D1 keeps showing required GTG always.
As shown in Figure 2, the film transistor device of present embodiment circuit use is a low-temperature polysilicon film transistor.As Fig. 2 a, basic circuit diagram of the present invention is a kind of specific embodiment of the present invention, and the employed film transistor device of present embodiment is a low-temperature polysilicon film transistor.And present embodiment need be made the thin film transistor (TFT) of two types of p type thin film transistor (TFT) and n type thin film transistor (TFT)s.At present major part be used for the low-temperature polysilicon film transistor substrate of liquid crystal or organic light emitting display all integrated the part peripheral drive circuit, and peripheral drive circuit all comprises p type thin film transistor (TFT) and n type thin film transistor (TFT).Therefore circuit of the present invention can not increase extra technology and cost of manufacture.
Embodiment 2:
As shown in Figure 3, present embodiment drives based on amorphous silicon film transistor, and this embodiment also can be used for low-temperature polysilicon film transistor and drives.On the basis of this circuit structure Fig. 2 circuit in embodiment 1, increased a control signal EM[n] be connected the thin film transistor (TFT) T4 among the independent control chart 3a with the grid of the 4th switching thin-film transistor T4.EM[n] the input waveform shown in Fig. 3 b.This control signal EM[n] be at Vgate[n-1] be in the high level, output low level, all the other times are high level.The effect of this signal is in the threshold voltage vt h definition phase, T4 closes thin film transistor (TFT), blocking-up power supply signal VDD is connected with drive thin film transistors T5's, the drain electrode of thin film transistor (TFT) is linked to each other with grid, thereby obtain the threshold voltage vt h_T5 of drive thin film transistors T5 at circuit node N2.Therefore present embodiment can reach the effect of compensation drive thin film transistors characteristic drift equally.
All the other NM parts of present embodiment are identical with embodiment 1.
The invention provides a kind of thinking and method of improving the image element circuit of service life of active matrix organic light-emitting display; the method and the approach of this technical scheme of specific implementation are a lot; the above only is a preferred implementation of the present invention; should be understood that; for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.The all available prior art of each ingredient not clear and definite in the present embodiment is realized.
Claims (4)
1. image element circuit that improves service life of active matrix organic light-emitting display, it is characterized in that, comprise power lead, data line, many horizontal scanning lines, Organic Light Emitting Diode, storage capacitors, coupling capacitance, first drive thin film transistors, first switching thin-film transistor, second switch thin film transistor (TFT), the 3rd switching thin-film transistor, the 4th switching thin-film transistor, wherein:
First drive thin film transistors comprises grid, drain electrode and source electrode, and it is luminous to be used to drive described Organic Light Emitting Diode, and an end of described grid and described storage capacitors links to each other; Described drain electrode links to each other with the source electrode of described the 4th switching thin-film transistor and the drain electrode of described the 3rd switching thin-film transistor; The anode of described source electrode and described Organic Light Emitting Diode links to each other;
First switching thin-film transistor, control coupling capacitance are that the grid of first drive thin film transistors charges into luma data voltage;
The second switch thin film transistor (TFT), the end discharge of control coupling capacitance;
The 3rd switching thin-film transistor, the grid voltage of controlling first drive thin film transistors is discharged to threshold voltage;
The 4th switching thin-film transistor is controlled being connected of described power lead and first drive thin film transistors;
Wherein said power lead links to each other with the drain electrode of described the 4th switching thin-film transistor; Described data line links to each other with the drain electrode of described first switching thin-film transistor; First end of described coupling capacitance links to each other with the source electrode of described first switching thin-film transistor and the drain electrode of second switch thin film transistor (TFT), and the other end of described coupling capacitance links to each other with the grid of described first drive thin film transistors.
2. according to the described a kind of image element circuit that improves service life of active matrix organic light-emitting display of claim 1, it is characterized in that described many horizontal scanning lines are n-1 horizontal scanning line and n horizontal scanning line, wherein n is a natural number; Described n-1 horizontal scanning line control second switch thin film transistor (TFT), the 3rd switching thin-film transistor and the 4th switching thin-film transistor; Described n horizontal scanning line is controlled first switching thin-film transistor.
3. according to the described a kind of image element circuit that improves service life of active matrix organic light-emitting display of claim 2, it is characterized in that, the grid of described the 4th switching thin-film transistor connects the n-1 horizontal scanning line respectively, and the grid of second switch thin film transistor (TFT) and the 3rd switching thin-film transistor.
4. according to the described a kind of image element circuit that improves service life of active matrix organic light-emitting display of claim 1, it is characterized in that, comprise control signal wire, control signal line traffic control the 4th switching thin-film transistor is connected with the grid of the 4th switching thin-film transistor.
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| US11282442B2 (en) | 2019-03-20 | 2022-03-22 | Fuzhou Boe Optoelectronics Technology Co., Ltd. | Pixel driving circuit and driving method thereof, and display panel |
| CN110148381A (en) * | 2019-06-17 | 2019-08-20 | 南京国兆光电科技有限公司 | A kind of pixel circuit for silicon substrate AMOLED driving chip |
| CN110444167A (en) * | 2019-06-28 | 2019-11-12 | 福建华佳彩有限公司 | A kind of AMOLED compensation circuit |
| CN110782842A (en) * | 2019-11-25 | 2020-02-11 | 南京中电熊猫平板显示科技有限公司 | Self-luminous display device and in-pixel compensation circuit |
| CN114822408A (en) * | 2022-05-31 | 2022-07-29 | 昆山国显光电有限公司 | Electronic tag, driving method thereof and picture updating system of electronic tag |
| CN114822408B (en) * | 2022-05-31 | 2023-10-10 | 昆山国显光电有限公司 | Electronic tag, driving method thereof and picture updating system of electronic tag |
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Open date: 20100825 |