CN104575387A - AMOLED pixel driving circuit and method - Google Patents
AMOLED pixel driving circuit and method Download PDFInfo
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- CN104575387A CN104575387A CN201510039517.6A CN201510039517A CN104575387A CN 104575387 A CN104575387 A CN 104575387A CN 201510039517 A CN201510039517 A CN 201510039517A CN 104575387 A CN104575387 A CN 104575387A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0852—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
- G09G2320/045—Compensation of drifts in the characteristics of light emitting or modulating elements
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of El Displays (AREA)
Abstract
The invention provides an AMOLED pixel driving circuit and method. The AMOLED pixel driving circuit is of a 6T2C structure and comprises a first thin film transistor (T1), a second thin film transistor (T2), a third thin film transistor (T3), a fourth thin film transistor (T4), a fifth thin film transistor (T5), a sixth thin film transistor (T6), a first capacitor (C1), a second capacitor (C2) and an OLED. The first thin film transistor (T1) is a driving thin film transistor, the fifth thin film transistor (T5) is a switching thin film transistor, the first capacitor (C1) is a coupling capacitor, and the second capacitor (C2) is a storage capacitor. A first control signal (G1), a second control signal (G2) and a third control signal (G3) are introduced and combined to successively correspond to a data signal write-in stage (1), an overall situation compensation stage (2), a discharging stage (3) and a light-emitting stage (4). The threshold voltage change of the driving thin film transistor and the threshold voltage change of the OLED can be effectively compensated, the display luminance of an AMOLED is made even, and the display quality is improved.
Description
Technical field
The present invention relates to display technique field, particularly relate to a kind of AMOLED pixel-driving circuit and image element driving method.
Background technology
Organic Light Emitting Diode (Organic Light Emitting Display, OLED) display device has autoluminescence, driving voltage is low, luminescence efficiency is high, the response time is short, sharpness and high, the nearly 180 ° of visual angles of contrast, serviceability temperature wide ranges, can realize the plurality of advantages such as Flexible Displays and large area total colouring, being known as by industry is the display device having development potentiality most.
OLED display can be divided into passive matrix OLED (Passive MatrixOLED according to type of drive, and active array type OLED (Active Matrix OLED PMOLED), AMOLED) two large classes, i.e. directly address and thin film transistor (TFT) (Thin Film Transistor, TFT) matrix addressing two class.Wherein, AMOLED has the pixel of the arrangement in array, and belong to initiatively display type, luminous efficacy is high, is typically used as the large scale display device of high definition.
AMOLED is current driving apparatus, when there being electric current to flow through Organic Light Emitting Diode, and organic light-emitting diode, and luminosity is determined by the electric current flowing through Organic Light Emitting Diode self.Major part existing integrated circuit (Integrated Circuit, IC) all transmission voltage signals, therefore the pixel-driving circuit of AMOLED has needed the task of voltage signal being changed into current signal.Traditional AMOLED pixel-driving circuit is generally 2T1C, and namely two thin film transistor (TFT)s add the structure of an electric capacity, are electric current by voltage transformation.
As described in Figure 1, traditional 2T1C pixel-driving circuit for AMOLED, comprise a first film transistor T10, one second thin film transistor (TFT) T20 and an electric capacity C, described the first film transistor T10 is switching thin-film transistor, described second thin film transistor (TFT) T20 is for driving thin film transistor (TFT), and described electric capacity C is memory capacitance.Particularly, the grid of described the first film transistor T10 is electrically connected sweep signal Scan, and source electrode is electrically connected data-signal Data, and drain electrode is electrically connected with the grid of the second thin film transistor (TFT) T20 and one end of electric capacity C; The source electrode of described second thin film transistor (TFT) T20 is electrically connected power supply positive voltage VDD, and drain electrode is electrically connected the anode of organic light emitting diode D; The negative electrode of organic light emitting diode D is electrically connected power-voltage VSS; One end of electric capacity C is electrically connected the drain electrode of the first film transistor T10, and the other end is electrically connected the source electrode of the second thin film transistor (TFT) T20.During AMOLED display, sweep signal Scan controls the first film transistor T10 and opens, data-signal Data enters into grid and the electric capacity C of the second thin film transistor (TFT) T20 through the first film transistor T10, then the first film transistor T10 closes, due to the memory action of electric capacity C, the grid voltage of the second thin film transistor (TFT) T20 still can continue to keep voltage data signal, the second thin film transistor (TFT) T20 is made to be in conducting state, drive current through the second thin film transistor (TFT) T20 and enter organic light emitting diode D, drive organic light emitting diode D luminous.
The above-mentioned 2T1C pixel-driving circuit being conventionally used to AMOLED to the trigger voltage of the threshold voltage of thin film transistor (TFT) and channel mobility, Organic Light Emitting Diode and the transient process of quantum efficiency and power supply all very sensitive.Second thin film transistor (TFT) T20, namely drives the threshold voltage of thin film transistor (TFT) can drift about along with the working time, thus causes the luminescence of Organic Light Emitting Diode D unstable; Further, the second thin film transistor (TFT) T20 of each pixel, namely drives the drift of the threshold voltage of thin film transistor (TFT) different, drift value or increase or reduction, causes the non-uniform light between each pixel, brightness differs.The unevenness of this traditional AMOLED display brightness do not caused with the 2T1C pixel-driving circuit of compensation is used to be about 50% even higher.
The method solving AMOLED display brightness uneven adds compensating circuit to each pixel, compensation means must to the parameter of the driving thin film transistor (TFT) in each pixel, such as threshold voltage and mobility, compensate, and output current become and has nothing to do with these parameters.
Summary of the invention
The object of the present invention is to provide a kind of AMOLED pixel-driving circuit, the threshold voltage variation of thin film transistor (TFT) and organic light emitting diode can be driven by effective compensation, make the display brightness of AMOLED comparatively even, promote display quality.
The present invention also aims to provide a kind of AMOLED image element driving method, effective compensation can be carried out to driving the threshold voltage variation of thin film transistor (TFT) and organic light emitting diode, make the display brightness of AMOLED comparatively even, promote display quality.
For achieving the above object, the invention provides a kind of AMOLED pixel-driving circuit, comprising: the first film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th thin film transistor (TFT), the first electric capacity, the second electric capacity and Organic Light Emitting Diode; Described the first film transistor is for driving thin film transistor (TFT), and described 5th thin film transistor (TFT) is switching thin-film transistor, and described first electric capacity is coupling capacitance, and described second electric capacity is memory capacitance;
The grid of described 5th thin film transistor (TFT) is electrically connected at sweep signal, and source electrode is electrically connected at data-signal, and drain electrode is electrically connected at first node;
The grid of described 4th thin film transistor (TFT) is electrically connected at the first control signal, and source electrode is electrically connected at first node, and drain electrode is electrically connected at Section Point;
The grid of described 6th thin film transistor (TFT) is electrically connected at the second control signal, and source electrode is electrically connected at Section Point, and drain electrode is electrically connected at one end and the reference voltage of the second electric capacity;
The grid of described 3rd thin film transistor (TFT) is electrically connected at the first control signal, and source electrode is electrically connected at the drain electrode of the second thin film transistor (TFT) and the drain electrode of the first film transistor, and drain electrode is electrically connected at the 3rd node;
The grid of described second thin film transistor (TFT) is electrically connected at the 3rd control signal, and source electrode is electrically connected at power supply positive voltage, and drain electrode is electrically connected at the source electrode of the 3rd thin film transistor (TFT) and the drain electrode of the first film transistor;
The grid of described the first film transistor is electrically connected at the 3rd node, and drain electrode is electrically connected at the drain electrode of the second thin film transistor (TFT) and the source electrode of the 3rd thin film transistor (TFT), and source electrode is electrically connected at the 4th node;
One end of described first electric capacity is electrically connected at Section Point, and the other end is electrically connected at the 3rd node;
One end of described second electric capacity is electrically connected at the drain electrode of the 6th transistor, and the other end is electrically connected at first node;
The anode of described Organic Light Emitting Diode is electrically connected at the 4th node, and negative electrode is electrically connected at power-voltage.
Described the first film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th thin film transistor (TFT) are low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or amorphous silicon film transistor.
Described first control signal, the second control signal, all to be provided by outside time schedule controller with the 3rd control signal.
Described first control signal, the second control signal and the 3rd control signal are combined, successively correspond to a data-signal write phase, a global compensation stage, a discharge regime and a glow phase;
In described data-signal write phase, described first control signal is electronegative potential, and described second control signal is noble potential, and described 3rd control signal is noble potential;
In the described global compensation stage, described first control signal is noble potential, and described second control signal is electronegative potential, and described 3rd control signal is noble potential;
At described discharge regime, described first control signal is noble potential, and described second control signal is electronegative potential, and described 3rd control signal is electronegative potential;
In described glow phase, described first control signal is electronegative potential, and described second control signal is noble potential, and described 3rd control signal is noble potential.
Described sweep signal is pulse signal in described data-signal write phase, the described global compensation stage, discharge regime, with the glow phase stage in be electronegative potential.
Described reference voltage is a constant voltage.
The present invention also provides a kind of AMOLED image element driving method, comprises the steps:
Step S1, provide an AMOLED pixel-driving circuit;
Described AMOLED pixel-driving circuit comprises: the first film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th thin film transistor (TFT), the first electric capacity, the second electric capacity and Organic Light Emitting Diode; Described the first film transistor is for driving thin film transistor (TFT), and described 5th thin film transistor (TFT) is switching thin-film transistor, and described first electric capacity is coupling capacitance, and described second electric capacity is memory capacitance;
The grid of described 5th thin film transistor (TFT) is electrically connected at sweep signal, and source electrode is electrically connected at data-signal, and drain electrode is electrically connected at first node;
The grid of described 4th thin film transistor (TFT) is electrically connected at the first control signal, and source electrode is electrically connected at first node, and drain electrode is electrically connected at Section Point;
The grid of described 6th thin film transistor (TFT) is electrically connected at the second control signal, and source electrode is electrically connected at Section Point, and drain electrode is electrically connected at one end and the reference voltage of the second electric capacity;
The grid of described 3rd thin film transistor (TFT) is electrically connected at the first control signal, and source electrode is electrically connected at the drain electrode of the second thin film transistor (TFT) and the drain electrode of the first film transistor, and drain electrode is electrically connected at the 3rd node;
The grid of described second thin film transistor (TFT) is electrically connected at the 3rd control signal, and source electrode is electrically connected at power supply positive voltage, and drain electrode is electrically connected at the source electrode of the 3rd thin film transistor (TFT) and the drain electrode of the first film transistor;
The grid of described the first film transistor is electrically connected at the 3rd node, and drain electrode is electrically connected at the drain electrode of the second thin film transistor (TFT) and the source electrode of the 3rd thin film transistor (TFT), and source electrode is electrically connected at the 4th node;
One end of described first electric capacity is electrically connected at Section Point, and the other end is electrically connected at the 3rd node;
One end of described second electric capacity is electrically connected at the drain electrode of the 6th transistor, and the other end is electrically connected at first node;
The anode of described Organic Light Emitting Diode is electrically connected at the 4th node, and negative electrode is electrically connected at power-voltage;
Step S2, enter sweep phase;
Described first control signal provides electronegative potential, and the second control signal provides noble potential, and the 3rd control signal provides noble potential, and described 3rd, the 4th thin film transistor (TFT) all cuts out; Described sweep signal is pulse signal and lines by line scan, and data-signal writes first node line by line, is stored in the second electric capacity;
Step S3, enter the global compensation stage;
Described sweep signal is all electronegative potential, and the 5th thin film transistor (TFT) in all pixels all cuts out; Described first control signal end provides noble potential, second control signal provides electronegative potential, 3rd control signal provides noble potential, described 3rd, the 4th thin film transistor (TFT) is all opened, described 6th thin film transistor (TFT) cuts out, data-signal writes Section Point from first node, and the current potential of the 3rd node is moved to noble potential by power supply positive voltage;
Step S4, enter discharge regime;
Described sweep signal is still all electronegative potential, and the 5th thin film transistor (TFT) in all pixels all cuts out; Described first control signal end provides noble potential, and the second control signal provides electronegative potential, and the 3rd control signal provides electronegative potential, and described second, the 6th thin film transistor (TFT) all cuts out, described 3rd node discharge extremely:
V
G＝VSS+V
th_T1+V
th_OLED
Wherein, V
grepresent the voltage of described 3rd node, VSS represents power-voltage, V
th_T1represent the threshold voltage of described the first film transistor, V
th_OLEDrepresent the threshold voltage of organic light emitting diode;
Step S5, enter glow phase;
Described sweep signal is still all electronegative potential, and the 5th thin film transistor (TFT) in all pixels all cuts out; Described first control signal end provides electronegative potential, second control signal provides noble potential, and the 3rd control signal provides noble potential, and described 3rd, the 4th thin film transistor (TFT) all cuts out, described second, the 6th thin film transistor (TFT) is all opened, and described Section Point is written into reference voltage;
The voltage of described 3rd node and the grid voltage of described the first film transistor are capacitively coupled to by described first:
V
G＝VSS+V
th_T1+V
th_OLED+V
ref－V
Data
The voltage of described 4th node and the source voltage of described the first film transistor are:
V
B＝VSS+V
th_OLED+f(Data)
Wherein, V
grepresent the voltage of described 3rd node and the grid voltage of described the first film transistor, VSS represents power-voltage, V
th_T1represent the threshold voltage of described the first film transistor, V
th_OLEDrepresent the threshold voltage of organic light emitting diode, V
refrepresent reference voltage, V
datarepresent voltage data signal, V
brepresent the source voltage of the voltage of described 4th node and described the first film transistor, f (Data) represents that one about the function of data-signal;
Described organic light-emitting diode, and the threshold voltage flowing through the electric current of described Organic Light Emitting Diode and the threshold voltage of the first film transistor and Organic Light Emitting Diode has nothing to do.
Described the first film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th thin film transistor (TFT) are low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or amorphous silicon film transistor.
Described first control signal, the second control signal, all to be provided by outside time schedule controller with the 3rd control signal.
Described reference voltage is a constant voltage.
Beneficial effect of the present invention: a kind of AMOLED pixel-driving circuit provided by the invention and image element driving method, the driving circuit of 6T2C structure is adopted to compensate the threshold voltage of driving transistors in each pixel and the threshold voltage of Organic Light Emitting Diode, and the time of compensated stage can adjust, do not affect the fluorescent lifetime of Organic Light Emitting Diode, the threshold voltage variation of thin film transistor (TFT) and organic light emitting diode can be driven by effective compensation, make the display brightness of AMOLED comparatively even, promote display quality.
In order to further understand feature of the present invention and technology contents, refer to following detailed description for the present invention and accompanying drawing, but accompanying drawing only provides reference and explanation use, is not used for being limited the present invention.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, by the specific embodiment of the present invention describe in detail, will make technical scheme of the present invention and other beneficial effect apparent.
In accompanying drawing,
Fig. 1 is the circuit diagram of traditional 2T1C pixel-driving circuit for AMOLED;
Fig. 2 is the circuit diagram of AMOLED pixel-driving circuit of the present invention;
Fig. 3 is the sequential chart of AMOLED pixel-driving circuit of the present invention;
Fig. 4 is the schematic diagram of the step S2 of AMOLED image element driving method of the present invention;
Fig. 5 is the schematic diagram of the step S3 of AMOLED image element driving method of the present invention;
Fig. 6 is the schematic diagram of the step S4 of AMOLED image element driving method of the present invention;
Fig. 7 is the schematic diagram of the step S5 of AMOLED image element driving method of the present invention;
Fig. 8 is the current analog data plot flowing through OLED corresponding when driving the threshold voltage shift of thin film transistor (TFT) in the present invention;
The current analog data plot flowing through OLED that Fig. 9 is corresponding when being the threshold voltage shift of OLED in the present invention.
Embodiment
For further setting forth the technological means and effect thereof that the present invention takes, be described in detail below in conjunction with the preferred embodiments of the present invention and accompanying drawing thereof.
Refer to Fig. 2, the invention provides a kind of AMOLED pixel-driving circuit, this AMOLED pixel-driving circuit adopts 6T2C structure, comprising: the first film transistor T1, the second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT) T5, the 6th thin film transistor (TFT) T6, the first electric capacity C1, the second electric capacity C2 and Organic Light Emitting Diode OLED.
The grid of described 5th thin film transistor (TFT) T5 is electrically connected at sweep signal Scan, and source electrode is electrically connected at data-signal Data, and drain electrode is electrically connected at first node D; The grid of described 4th thin film transistor (TFT) T4 is electrically connected at the first control signal G1, and source electrode is electrically connected at first node D, and drain electrode is electrically connected at Section Point A; The grid of described 6th thin film transistor (TFT) T6 is electrically connected at the second control signal G2, and source electrode is electrically connected at Section Point A, and drain electrode is electrically connected at one end and the reference voltage V of the second electric capacity C2
ref; The grid of described 3rd thin film transistor (TFT) T3 is electrically connected at the first control signal G1, and source electrode is electrically connected at the drain electrode of the second thin film transistor (TFT) T2 and the drain electrode of the first film transistor T1, and drain electrode is electrically connected at the 3rd node G; The grid of described second thin film transistor (TFT) T2 is electrically connected at the 3rd control signal G3, and source electrode is electrically connected at power supply positive voltage VDD, and drain electrode is electrically connected at the source electrode of the 3rd thin film transistor (TFT) T3 and the drain electrode of the first film transistor T1; The grid of described the first film transistor T1 is electrically connected at the 3rd node G, and drain electrode is electrically connected at the drain electrode of the second thin film transistor (TFT) T2 and the source electrode of the 3rd thin film transistor (TFT) T3, and source electrode is electrically connected at the 4th Node B; One end of described first electric capacity C1 is electrically connected at Section Point A, and the other end is electrically connected at the 3rd node G; One end of described second electric capacity C2 is electrically connected at the drain electrode of the 6th transistor T6, and the other end is electrically connected at first node D; The anode of described Organic Light Emitting Diode OLED is electrically connected at the 4th Node B, and negative electrode is electrically connected at power-voltage VSS.
Described first control signal G1 is for controlling opening and closedown of the 3rd, the 4th thin film transistor (TFT) T3, T4; Described second control signal G2 is for controlling opening and closedown of the 6th thin film transistor (TFT) T6; Described 3rd control signal G3 is for controlling opening and closedown of the second thin film transistor (TFT) T2; Described sweep signal Scan, for controlling opening and closedown of the 5th thin film transistor (TFT) T5, realizes lining by line scan; Described data-signal Data is for controlling the luminosity of Organic Light Emitting Diode OLED.Described reference voltage V
refit is a constant voltage.Described the first film transistor T1 is for driving thin film transistor (TFT), and described 5th thin film transistor (TFT) T5 is switching thin-film transistor, and described first electric capacity C1 is coupling capacitance, and described second electric capacity C2 is memory capacitance.
Particularly, described the first film transistor T1, the second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT) T5, with the 6th thin film transistor (TFT) T6 be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or amorphous silicon film transistor.Described first control signal G1, the second control signal G2, all to be provided by outside time schedule controller with the 3rd control signal G3.
Further, refer to Fig. 3, described first control signal G1, the second control signal G2 and the 3rd control signal G3 combined, successively correspond to data-signal write phase 1, global compensation stage 2, one discharge regime 3 and a glow phase 4.In described data-signal write phase 1, described first control signal G1 is electronegative potential, and described second control signal G2 is noble potential, and described 3rd control signal G3 is noble potential; In the described global compensation stage 2, described first control signal G1 is noble potential, and described second control signal G2 is electronegative potential, and described 3rd control signal G3 is noble potential; At described discharge regime 3, described first control signal G1 is noble potential, and described second control signal G2 is electronegative potential, and described 3rd control signal G3 is electronegative potential; In described glow phase 4, described first control signal G1 is electronegative potential, and described second control signal G2 is noble potential, and described 3rd control signal G3 is noble potential.Described sweep signal Scan is pulse signal in described data-signal write phase 1, the described global compensation stage 2, discharge regime 3, with glow phase 4 stage in be electronegative potential.
In described data-signal write phase 1, described sweep signal Scan lines by line scan, and data-signal Data writes first node D line by line, is stored in the second electric capacity C2; In the described global compensation stage 2, data-signal Data writes Section Point A from first node D, and the current potential of the 3rd node G is moved to noble potential by power supply positive voltage VDD; At described discharge regime 3, described 3rd node G discharges; In described glow phase 4, described Section Point A is written into reference voltage V
refthe voltage of described 3rd node G and the grid voltage of described the first film transistor T1 are coupled by described first electric capacity C1, described Organic Light Emitting Diode OLED is luminous, and the threshold voltage flowing through the electric current of described Organic Light Emitting Diode OLED and the threshold voltage of the first film transistor T1 and Organic Light Emitting Diode OLED has nothing to do.
Namely this AMOLED pixel-driving circuit can drive the threshold voltage variation of thin film transistor (TFT) and organic light emitting diode OLED by effective compensation the first film transistor T1, makes the display brightness of AMOLED comparatively even, promotes display quality.
Refer to Fig. 4 to Fig. 7, composition graphs 2, Fig. 3, on the basis of above-mentioned AMOLED pixel-driving circuit, the present invention also provides a kind of AMOLED image element driving method, comprises the steps:
Step S1, provide the AMOLED pixel-driving circuit of an above-mentioned employing 6T2C structure as shown in Figure 2, no longer repeated description is carried out to this circuit herein.
Step S2, refer to Fig. 3 and Fig. 4, enter sweep phase 1.
Described first control signal G1 provides electronegative potential, and the second control signal G2 provides noble potential, and the 3rd control signal G3 provides noble potential, and described 3rd, the 4th thin film transistor (TFT) T3, T4 all closes; Described sweep signal Scan is pulse signal and lines by line scan, and data-signal Data writes first node D line by line, is stored in the second electric capacity C2.
Step S3, refer to Fig. 3 and Fig. 5, enter the global compensation stage 2.
Described sweep signal Scan is all electronegative potential, and the 5th thin film transistor (TFT) T5 in all pixels all closes; Described first control signal end G1 provides noble potential, second control signal G2 provides electronegative potential, 3rd control signal G3 provides noble potential, described 3rd, the 4th thin film transistor (TFT) T3, T4 all opens, described 6th thin film transistor (TFT) T6 closes, data-signal Data writes Section Point A from first node D, and the current potential of the 3rd node G is moved to noble potential by power supply positive voltage VDD.
Step S4, refer to Fig. 3 and Fig. 6, enter discharge regime 3.
Described sweep signal Scan is still all electronegative potential, and the 5th thin film transistor (TFT) T5 in all pixels all closes; Described first control signal end G1 provides noble potential, and the second control signal G2 provides electronegative potential, and the 3rd control signal G3 provides electronegative potential, and described second, the 6th thin film transistor (TFT) T2, T6 all closes.
Because described 3rd control signal G3 provides electronegative potential, second thin film transistor (TFT) T2 closes, the drain electrode of described the first film transistor T1 is no longer connected with power supply positive voltage VDD, now the first control signal G1 still provides noble potential, described 3rd thin film transistor (TFT) T3 opens, and the grid of described the first film transistor T1 is directly connected by described 3rd thin film transistor (TFT) T3 with drain electrode, and namely described the first film transistor T1 is shorted as diode, in such cases, described 3rd node G is discharged to:
V
g=VSS+V
th_T1+ V
th_OLEDwherein, V
grepresent the voltage of described 3rd node G, VSS represents power-voltage, V
th_T1represent the threshold voltage of described the first film transistor T1, V
th_OLEDrepresent the threshold voltage of organic light emitting diode OLED.
Step S5, refer to Fig. 3 and Fig. 7, enter glow phase 4.
Described sweep signal Scan is still all electronegative potential, and the 5th thin film transistor (TFT) T5 in all pixels all closes; Described first control signal end G1 provides electronegative potential, second control signal G2 provides noble potential, 3rd control signal G3 provides noble potential, described 3rd, the 4th thin film transistor (TFT) T3, T4 all closes, described second, the 6th thin film transistor (TFT) T2, T6 all opens, and described Section Point A is written into reference voltage V
ref.
The voltage of described 3rd node G and the grid voltage of described the first film transistor T1 are coupled to by described first electric capacity C1:
V
G＝VSS+V
th_T1+V
th_OLED+V
ref－V
Data
The voltage of described 4th Node B and the source voltage of described the first film transistor T1 are:
V
B＝VSS+V
th_OLED+f(Data)
Wherein, V
grepresent the voltage of described 3rd node G and the grid voltage of described the first film transistor T1, VSS represents power-voltage, V
th_T1represent the threshold voltage of described the first film transistor T1, V
th_OLEDrepresent the threshold voltage of organic light emitting diode OLED, V
refrepresent reference voltage, V
datarepresent data-signal Data voltage, V
brepresent the source voltage of the voltage of described 4th Node B and described the first film transistor T1, f (Data) is one about the function of data-signal Data, represent that data-signal Data is to the voltage V of the 4th Node B
bthe i.e. impact that produces of the source voltage of described the first film transistor T1, those skilled in the art can adopt corresponding known function according to needs.
Described Organic Light Emitting Diode OLED is luminous.
Known, calculating the formula flowing through the electric current of Organic Light Emitting Diode OLED is:
I＝1/2Cox(μW/L)(Vgs－V
th)
2(1)
Wherein I is the electric current of Organic Light Emitting Diode OLED, and μ is the carrier mobility driving thin film transistor (TFT), W and L is respectively width and the length of the raceway groove driving thin film transistor (TFT), and Vgs drives the voltage between the grid of thin film transistor (TFT) and source electrode, V
thfor driving the threshold voltage of thin film transistor (TFT).
In the present invention, the threshold voltage V of thin film transistor (TFT) is driven
thbe the threshold voltage V of described the first film transistor T1
th_T1; Vgs is the difference between the voltage of the voltage of described 3rd node G and the grid voltage of described the first film transistor T1 and described 4th Node B and the source voltage of described the first film transistor T1, namely has:
Vgs＝V
G－V
B
＝(VSS+V
th_T1+V
th_OLED+V
ref－V
Data)－(VSS+V
th_OLED+f(Data))
＝V
th_T1+V
ref－V
Data－f(Data) (2)
(2) formula is substituted into (1) formula obtain:
I＝1/2Cox(μW/L)(V
th_T1+V
ref－V
Data－f(Data)－V
th_T1)
2
＝1/2Cox(μW/L)(V
ref－V
Data－f(Data))
2
As can be seen here, the electric current I of described Organic Light Emitting Diode OLED and the threshold voltage V of described the first film transistor T1 is flowed through
th_T1, Organic Light Emitting Diode OLED threshold voltage V
th_OLED, and power-voltage VSS have nothing to do, achieve compensate function, the threshold voltage variation of thin film transistor (TFT) and described the first film transistor T1 and organic light emitting diode OLED can be driven by effective compensation, make the display brightness of AMOLED comparatively even, promote display quality.
Further, this AMOLED image element driving method has following characteristics: only need one group of GOA signal; In described step S3, the time in global compensation stage 2 can adjust; Do not affect the fluorescent lifetime of described Organic Light Emitting Diode OLED; The threshold voltage V driving thin film transistor (TFT) and the first film transistor T1 can be compensated
th_T1, Organic Light Emitting Diode OLED threshold voltage V
th_OLED, and power-voltage VSS.
Refer to Fig. 8, when drive the threshold voltage of thin film transistor (TFT) and the first film transistor T1 drift about respectively 0V ,+0.5V ,-0.5V time, the current change quantity flowing through described Organic Light Emitting Diode OLED can not more than 15%, effectively ensure that the stability of photoluminescence of Organic Light Emitting Diode OLED, make the display brightness of AMOLED more even.
Refer to Fig. 9, when the threshold voltage of described Organic Light Emitting Diode OLED drifts about 0V ,+0.5V ,-0.5V respectively, the current change quantity flowing through described Organic Light Emitting Diode OLED can not more than 15%, effectively ensure that the stability of photoluminescence of Organic Light Emitting Diode OLED, make the display brightness of AMOLED more even.
In sum, AMOLED pixel-driving circuit of the present invention and image element driving method, the driving circuit of 6T2C structure is adopted to compensate the threshold voltage of driving transistors in each pixel and the threshold voltage of Organic Light Emitting Diode, and the time of compensated stage can adjust, do not affect the fluorescent lifetime of Organic Light Emitting Diode, the threshold voltage variation of thin film transistor (TFT) and organic light emitting diode can be driven by effective compensation, make the display brightness of AMOLED comparatively even, promote display quality.
The above, for the person of ordinary skill of the art, can make other various corresponding change and distortion according to technical scheme of the present invention and technical conceive, and all these change and be out of shape the protection domain that all should belong to the claims in the present invention.
Claims (10)
1. an AMOLED pixel-driving circuit, it is characterized in that, comprising: the first film transistor (T1), the second thin film transistor (TFT) (T2), the 3rd thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5), the 6th thin film transistor (TFT) (T6), the first electric capacity (C1), the second electric capacity (C2) and Organic Light Emitting Diode (OLED); Described the first film transistor (T1) is for driving thin film transistor (TFT), described 5th thin film transistor (TFT) (T5) is switching thin-film transistor, described first electric capacity (C1) is coupling capacitance, and described second electric capacity (C2) is memory capacitance;
The grid of described 5th thin film transistor (TFT) (T5) is electrically connected at sweep signal (Scan), and source electrode is electrically connected at data-signal (Data), and drain electrode is electrically connected at first node (D);
The grid of described 4th thin film transistor (TFT) (T4) is electrically connected at the first control signal (G1), and source electrode is electrically connected at first node (D), and drain electrode is electrically connected at Section Point (A);
The grid of described 6th thin film transistor (TFT) (T6) is electrically connected at the second control signal (G2), source electrode is electrically connected at Section Point (A), and drain electrode is electrically connected at one end and the reference voltage (V of the second electric capacity (C2)
ref);
The grid of described 3rd thin film transistor (TFT) (T3) is electrically connected at the first control signal (G1), source electrode is electrically connected at the drain electrode of the second thin film transistor (TFT) (T2) and the drain electrode of the first film transistor (T1), and drain electrode is electrically connected at the 3rd node (G);
The grid of described second thin film transistor (TFT) (T2) is electrically connected at the 3rd control signal (G3), source electrode is electrically connected at power supply positive voltage (VDD), and drain electrode is electrically connected at the source electrode of the 3rd thin film transistor (TFT) (T3) and the drain electrode of the first film transistor (T1);
The grid of described the first film transistor (T1) is electrically connected at the 3rd node (G), drain electrode is electrically connected at the drain electrode of the second thin film transistor (TFT) (T2) and the source electrode of the 3rd thin film transistor (TFT) (T3), and source electrode is electrically connected at the 4th node (B);
One end of described first electric capacity (C1) is electrically connected at Section Point (A), and the other end is electrically connected at the 3rd node (G);
One end of described second electric capacity (C2) is electrically connected at the drain electrode of the 6th transistor (T6), and the other end is electrically connected at first node (D);
The anode of described Organic Light Emitting Diode (OLED) is electrically connected at the 4th node (B), and negative electrode is electrically connected at power-voltage (VSS).
2. AMOLED pixel-driving circuit as claimed in claim 1, it is characterized in that, described the first film transistor (T1), the second thin film transistor (TFT) (T2), the 3rd thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5), with the 6th thin film transistor (TFT) (T6) be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or amorphous silicon film transistor.
3. AMOLED pixel-driving circuit as claimed in claim 1, it is characterized in that, described first control signal (G1), the second control signal (G2), all to be provided by outside time schedule controller with the 3rd control signal (G3).
4. AMOLED pixel-driving circuit as claimed in claim 1, it is characterized in that, described first control signal (G1), the second control signal (G2) and the 3rd control signal (G3) are combined, successively correspond to a data-signal write phase (1), a global compensation stage (2), a discharge regime (3) and a glow phase (4);
Described data-signal write phase (1), described first control signal (G1) is electronegative potential, and described second control signal (G2) is noble potential, and described 3rd control signal (G3) is noble potential;
Described global compensation stage (2), described first control signal (G1) is noble potential, and described second control signal (G2) is electronegative potential, and described 3rd control signal (G3) is noble potential;
In described discharge regime (3), described first control signal (G1) is noble potential, and described second control signal (G2) is electronegative potential, and described 3rd control signal (G3) is electronegative potential;
In described glow phase (4), described first control signal (G1) is electronegative potential, and described second control signal (G2) is noble potential, and described 3rd control signal (G3) is noble potential.
5. AMOLED pixel-driving circuit as claimed in claim 4, it is characterized in that, described sweep signal (Scan) is pulse signal in described data-signal write phase (1), described global compensation stage (2), discharge regime (3), with glow phase (4) stage in be electronegative potential.
6. AMOLED pixel-driving circuit as claimed in claim 1, is characterized in that, described reference voltage (V
ref) be a constant voltage.
7. an AMOLED image element driving method, is characterized in that, comprises the steps:
Step S1, provide an AMOLED pixel-driving circuit;
Described AMOLED pixel-driving circuit comprises: the first film transistor (T1), the second thin film transistor (TFT) (T2), the 3rd thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5), the 6th thin film transistor (TFT) (T6), the first electric capacity (C1), the second electric capacity (C2) and Organic Light Emitting Diode (OLED); Described the first film transistor (T1) is for driving thin film transistor (TFT), described 5th thin film transistor (TFT) (T5) is switching thin-film transistor, described first electric capacity (C1) is coupling capacitance, and described second electric capacity (C2) is memory capacitance;
The grid of described 5th thin film transistor (TFT) (T5) is electrically connected at sweep signal (Scan), and source electrode is electrically connected at data-signal (Data), and drain electrode is electrically connected at first node (D);
The grid of described 4th thin film transistor (TFT) (T4) is electrically connected at the first control signal (G1), and source electrode is electrically connected at first node (D), and drain electrode is electrically connected at Section Point (A);
The grid of described 6th thin film transistor (TFT) (T6) is electrically connected at the second control signal (G2), source electrode is electrically connected at Section Point (A), and drain electrode is electrically connected at one end and the reference voltage (V of the second electric capacity (C2)
ref);
The grid of described 3rd thin film transistor (TFT) (T3) is electrically connected at the first control signal (G1), source electrode is electrically connected at the drain electrode of the second thin film transistor (TFT) (T2) and the drain electrode of the first film transistor (T1), and drain electrode is electrically connected at the 3rd node (G);
The grid of described second thin film transistor (TFT) (T2) is electrically connected at the 3rd control signal (G3), source electrode is electrically connected at power supply positive voltage (VDD), and drain electrode is electrically connected at the source electrode of the 3rd thin film transistor (TFT) (T3) and the drain electrode of the first film transistor (T1);
The grid of described the first film transistor (T1) is electrically connected at the 3rd node (G), drain electrode is electrically connected at the drain electrode of the second thin film transistor (TFT) (T2) and the source electrode of the 3rd thin film transistor (TFT) (T3), and source electrode is electrically connected at the 4th node (B);
One end of described first electric capacity (C1) is electrically connected at Section Point (A), and the other end is electrically connected at the 3rd node (G);
One end of described second electric capacity (C2) is electrically connected at the drain electrode of the 6th transistor (T6), and the other end is electrically connected at first node (D);
The anode of described Organic Light Emitting Diode (OLED) is electrically connected at the 4th node (B), and negative electrode is electrically connected at power-voltage (VSS);
Step S2, enter sweep phase (1);
Described first control signal (G1) provides electronegative potential, second control signal (G2) provide noble potential, 3rd control signal (G3) provides noble potential, and described 3rd, the 4th thin film transistor (TFT) (T3, T4) all cuts out; Described sweep signal (Scan) is for pulse signal and line by line scan, and data-signal (Data) writes first node (D) line by line, is stored in the second electric capacity (C2);
Step S3, enter the global compensation stage (2);
Described sweep signal (Scan) is all electronegative potential, and the 5th thin film transistor (TFT) (T5) in all pixels all cuts out; Described first control signal end (G1) provides noble potential, second control signal (G2) provide electronegative potential, 3rd control signal (G3) provides noble potential, described 3rd, the 4th thin film transistor (TFT) (T3, T4) is all opened, described 6th thin film transistor (TFT) (T6) cuts out, data-signal (Data) writes Section Point (A) from first node (D), and the current potential of the 3rd node (G) is moved to noble potential by power supply positive voltage (VDD);
Step S4, enter discharge regime (3);
Described sweep signal (Scan) is still all electronegative potential, and the 5th thin film transistor (TFT) (T5) in all pixels all cuts out; Described first control signal end (G1) provides noble potential, second control signal (G2) provide electronegative potential, 3rd control signal (G3) provides electronegative potential, described second, the 6th thin film transistor (TFT) (T2, T6) all cuts out, and described 3rd node (G) is discharged to:
V
G＝VSS+V
th_T1+V
th_OLED
Wherein, V
grepresent the voltage of described 3rd node (G), VSS represents power-voltage, V
th_T1represent the threshold voltage of described the first film transistor (T1), V
th_OLEDrepresent the threshold voltage of organic light emitting diode (OLED);
Step S5, enter glow phase (4);
Described sweep signal (Scan) is still all electronegative potential, and the 5th thin film transistor (TFT) (T5) in all pixels all cuts out; Described first control signal end (G1) provides electronegative potential, second control signal (G2) provide noble potential, 3rd control signal (G3) provides noble potential, described 3rd, the 4th thin film transistor (TFT) (T3, T4) all cuts out, described second, the 6th thin film transistor (TFT) (T2, T6) is all opened, and described Section Point (A) is written into reference voltage (V
ref);
The described voltage of the 3rd node (G) and the grid voltage of described the first film transistor (T1) are coupled to by described first electric capacity (C1):
V
G＝VSS+V
th_T1+V
th_OLED+V
ref－V
Data
The described voltage of the 4th node (B) and the source voltage of described the first film transistor (T1) are:
V
B＝VSS+V
th_OLED+f(Data)
Wherein, V
grepresent the described voltage of the 3rd node (G) and the grid voltage of described the first film transistor (T1), VSS represents power-voltage, V
th_T1represent the threshold voltage of described the first film transistor (T1), V
th_OLEDrepresent the threshold voltage of organic light emitting diode (OLED), V
refrepresent reference voltage, V
datarepresent data-signal (Data) voltage, V
brepresent the described voltage of the 4th node (B) and the source voltage of described the first film transistor (T1), f (Data) represents that one about the function of data-signal (Data);
Described Organic Light Emitting Diode (OLED) is luminous, and the threshold voltage flowing through the electric current of described Organic Light Emitting Diode (OLED) and the threshold voltage of the first film transistor (T1) and Organic Light Emitting Diode (OLED) has nothing to do.
8. AMOLED image element driving method as claimed in claim 7, it is characterized in that, described the first film transistor (T1), the second thin film transistor (TFT) (T2), the 3rd thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5), with the 6th thin film transistor (TFT) (T6) be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or amorphous silicon film transistor.
9. AMOLED image element driving method as claimed in claim 7, it is characterized in that, described first control signal (G1), the second control signal (G2), all to be provided by outside time schedule controller with the 3rd control signal (G3).
10. AMOLED image element driving method as claimed in claim 7, is characterized in that, described reference voltage (V
ref) be a constant voltage.
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| US14/655,726 US9761173B2 (en) | 2015-01-26 | 2015-04-01 | AMOLED pixel driving circuit and pixel driving method |
| PCT/CN2015/075682 WO2016119304A1 (en) | 2015-01-26 | 2015-04-01 | Amoled pixel drive circuit and pixel drive method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005202070A (en) * | 2004-01-14 | 2005-07-28 | Sony Corp | Display device and pixel circuit |
| KR20060064194A (en) * | 2004-12-08 | 2006-06-13 | 엘지.필립스 엘시디 주식회사 | Light emitting display device and driving method thereof |
| CN103165080A (en) * | 2013-03-21 | 2013-06-19 | 京东方科技集团股份有限公司 | Pixel circuit and driving method and display device thereof |
| CN203134326U (en) * | 2013-03-21 | 2013-08-14 | 京东方科技集团股份有限公司 | Pixel circuit and display device |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101056241B1 (en) * | 2008-12-19 | 2011-08-11 | 삼성모바일디스플레이주식회사 | Organic light emitting display |
| JP5580536B2 (en) * | 2009-01-09 | 2014-08-27 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | Display device |
| TWI417840B (en) * | 2009-08-26 | 2013-12-01 | Au Optronics Corp | Pixel circuit, active matrix organic light emitting diode (oled) display and driving method for pixel circuit |
| CN102789761B (en) * | 2012-08-06 | 2014-12-10 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof and organic light emitting display |
| JP6020079B2 (en) * | 2012-11-19 | 2016-11-02 | ソニー株式会社 | Display device, manufacturing method thereof, and electronic device |
| TWI485683B (en) * | 2013-03-28 | 2015-05-21 | Innolux Corp | Pixel circuit and driving method and display panel thereof |
| KR102024320B1 (en) * | 2013-05-28 | 2019-09-24 | 삼성디스플레이 주식회사 | Pixel and display device using the same |
| CN203376957U (en) * | 2013-07-30 | 2014-01-01 | 京东方科技集团股份有限公司 | Pixel driving circuit and display device |
| CN103413524B (en) * | 2013-07-31 | 2015-06-17 | 京东方科技集团股份有限公司 | Organic light-emitting diode pixel circuit, method for driving same and display device |
| CN103927984B (en) * | 2014-04-01 | 2017-07-28 | 深圳市华星光电技术有限公司 | The pixel-driving circuit and its driving method of a kind of OLED display |
| CN103956138B (en) * | 2014-04-18 | 2015-04-08 | 京东方科技集团股份有限公司 | AMOLED pixel drive circuit, method and display device |
| CN103927990B (en) * | 2014-04-23 | 2016-09-14 | 上海天马有机发光显示技术有限公司 | The image element circuit of OLED and driving method, OLED |
| CN105976758B (en) * | 2014-06-04 | 2019-01-22 | 上海天马有机发光显示技术有限公司 | A kind of the pixel compensation circuit and method of organic light emitting display |
| CN104123912B (en) * | 2014-07-03 | 2016-10-19 | 京东方科技集团股份有限公司 | Image element circuit and driving method, display device |
| TWI546795B (en) * | 2014-08-29 | 2016-08-21 | 友達光電股份有限公司 | Pixel circuit with organic light emitting diode |
| CN104464638B (en) * | 2014-12-29 | 2017-05-10 | 合肥鑫晟光电科技有限公司 | Pixel drive circuit and method, array substrate and display device |
-
2015
- 2015-01-26 CN CN201510039517.6A patent/CN104575387B/en active Active
- 2015-04-01 US US14/655,726 patent/US9761173B2/en active Active
- 2015-04-01 WO PCT/CN2015/075682 patent/WO2016119304A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005202070A (en) * | 2004-01-14 | 2005-07-28 | Sony Corp | Display device and pixel circuit |
| KR20060064194A (en) * | 2004-12-08 | 2006-06-13 | 엘지.필립스 엘시디 주식회사 | Light emitting display device and driving method thereof |
| CN103165080A (en) * | 2013-03-21 | 2013-06-19 | 京东方科技集团股份有限公司 | Pixel circuit and driving method and display device thereof |
| CN203134326U (en) * | 2013-03-21 | 2013-08-14 | 京东方科技集团股份有限公司 | Pixel circuit and display device |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN104575387B (en) | 2017-02-22 |
| US20160307500A1 (en) | 2016-10-20 |
| WO2016119304A1 (en) | 2016-08-04 |
| US9761173B2 (en) | 2017-09-12 |
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