CN100567563C - 化学蒸镀装置 - Google Patents

化学蒸镀装置 Download PDF

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Publication number
CN100567563C
CN100567563C CNB2005101233372A CN200510123337A CN100567563C CN 100567563 C CN100567563 C CN 100567563C CN B2005101233372 A CNB2005101233372 A CN B2005101233372A CN 200510123337 A CN200510123337 A CN 200510123337A CN 100567563 C CN100567563 C CN 100567563C
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CN
China
Prior art keywords
reactant gases
nozzle
reaction chamber
operation thing
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CNB2005101233372A
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English (en)
Chinese (zh)
Other versions
CN1891855A (zh
Inventor
柳光浚
安德烈·尤莎科夫
吴成泰
郑敬锡
郑和俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1891855A publication Critical patent/CN1891855A/zh
Application granted granted Critical
Publication of CN100567563C publication Critical patent/CN100567563C/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CNB2005101233372A 2005-06-30 2005-11-23 化学蒸镀装置 Active CN100567563C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050057623A KR100686724B1 (ko) 2005-06-30 2005-06-30 화학기상증착장치
KR1020050057623 2005-06-30

Publications (2)

Publication Number Publication Date
CN1891855A CN1891855A (zh) 2007-01-10
CN100567563C true CN100567563C (zh) 2009-12-09

Family

ID=37597045

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005101233372A Active CN100567563C (zh) 2005-06-30 2005-11-23 化学蒸镀装置

Country Status (2)

Country Link
KR (1) KR100686724B1 (ko)
CN (1) CN100567563C (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007026349A1 (de) * 2007-06-06 2008-12-11 Aixtron Ag Aus einer Vielzahl diffusionsverschweißter Scheiben bestehender Gasverteiler
JP2023509475A (ja) * 2020-01-06 2023-03-08 ラム リサーチ コーポレーション 内部輪郭を有するフェースプレートを備えるシャワーヘッド
CN111321463B (zh) * 2020-03-06 2021-10-15 北京北方华创微电子装备有限公司 反应腔室
WO2023096817A1 (en) * 2021-11-29 2023-06-01 Lam Research Corporation Showerhead faceplate configurations

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980022644U (ko) * 1996-10-29 1998-07-25 문정환 화학기상증착장치의 가스 샤워 헤드
JP3341619B2 (ja) * 1997-03-04 2002-11-05 東京エレクトロン株式会社 成膜装置
JP3595853B2 (ja) * 1999-03-18 2004-12-02 日本エー・エス・エム株式会社 プラズマｃｖｄ成膜装置
JP4327319B2 (ja) 1999-12-24 2009-09-09 株式会社アルバック 雛壇形シャワーヘッド、及びそのシャワーヘッドを用いた真空処理装置
JP2002069650A (ja) 2000-08-31 2002-03-08 Applied Materials Inc 気相堆積方法及び装置並びに半導体装置の製造方法及び装置

Also Published As

Publication number Publication date
KR100686724B1 (ko) 2007-02-26
CN1891855A (zh) 2007-01-10
KR20070002218A (ko) 2007-01-05

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