CN100561677C - 晶圆表面平坦化的方法 - Google Patents
晶圆表面平坦化的方法 Download PDFInfo
- Publication number
- CN100561677C CN100561677C CNB2007100443866A CN200710044386A CN100561677C CN 100561677 C CN100561677 C CN 100561677C CN B2007100443866 A CNB2007100443866 A CN B2007100443866A CN 200710044386 A CN200710044386 A CN 200710044386A CN 100561677 C CN100561677 C CN 100561677C
- Authority
- CN
- China
- Prior art keywords
- dielectric layer
- thickness
- crystal
- round fringes
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100443866A CN100561677C (zh) | 2007-07-30 | 2007-07-30 | 晶圆表面平坦化的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100443866A CN100561677C (zh) | 2007-07-30 | 2007-07-30 | 晶圆表面平坦化的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101359595A CN101359595A (zh) | 2009-02-04 |
CN100561677C true CN100561677C (zh) | 2009-11-18 |
Family
ID=40331997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007100443866A Expired - Fee Related CN100561677C (zh) | 2007-07-30 | 2007-07-30 | 晶圆表面平坦化的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100561677C (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101958276B (zh) * | 2009-07-16 | 2012-11-14 | 中芯国际集成电路制造(上海)有限公司 | 在晶圆上形成互连通孔失败的补救方法 |
CN102034701B (zh) * | 2009-09-25 | 2014-05-07 | 无锡华润上华半导体有限公司 | 一种形成介质层的方法以及抛光方法 |
CN102044482B (zh) * | 2009-10-20 | 2013-03-06 | 中芯国际集成电路制造(上海)有限公司 | 沟槽的形成方法 |
CN102044430A (zh) * | 2009-10-23 | 2011-05-04 | 无锡华润上华半导体有限公司 | 一种抛光晶圆的方法 |
CN102814725B (zh) * | 2011-06-08 | 2015-11-25 | 无锡华润上华科技有限公司 | 一种化学机械研磨方法 |
CN102637238B (zh) * | 2012-05-09 | 2013-12-25 | 中国科学院微电子研究所 | 一种晶圆表面的研磨去除率的计算方法 |
WO2013179764A1 (ja) * | 2012-05-30 | 2013-12-05 | オリンパス株式会社 | 撮像装置の製造方法および半導体装置の製造方法 |
DE102013201663B4 (de) * | 2012-12-04 | 2020-04-23 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
CN105097774B (zh) * | 2014-05-14 | 2019-04-09 | 中芯国际集成电路制造(上海)有限公司 | 芯片晶圆及其制作方法 |
CN107344327B (zh) * | 2017-05-05 | 2019-11-22 | 清华大学 | 在线改良晶圆表面平坦度的方法 |
CN108682613B (zh) * | 2018-03-29 | 2021-02-26 | 广东先导先进材料股份有限公司 | 半导体晶片的处理方法 |
JP2019201030A (ja) * | 2018-05-14 | 2019-11-21 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
CN110064984A (zh) * | 2019-05-06 | 2019-07-30 | 西安奕斯伟硅片技术有限公司 | 一种晶圆处理方法及装置 |
CN112992708A (zh) * | 2019-12-16 | 2021-06-18 | 中微半导体设备(上海)股份有限公司 | 一种半导体器件的制作方法 |
CN113436960B (zh) * | 2021-05-13 | 2023-02-28 | 上海新硅聚合半导体有限公司 | 一种提高薄膜cmp抛光厚度均匀性的方法 |
CN117524870A (zh) * | 2023-12-29 | 2024-02-06 | 物元半导体技术(青岛)有限公司 | 一种晶圆加工方法及晶圆 |
-
2007
- 2007-07-30 CN CNB2007100443866A patent/CN100561677C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101359595A (zh) | 2009-02-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100561677C (zh) | 晶圆表面平坦化的方法 | |
US6238271B1 (en) | Methods and apparatus for improved polishing of workpieces | |
US5945347A (en) | Apparatus and method for polishing a semiconductor wafer in an overhanging position | |
US6276997B1 (en) | Use of chemical mechanical polishing and/or poly-vinyl-acetate scrubbing to restore quality of used semiconductor wafers | |
JP4519199B2 (ja) | ウエハ再生方法およびウエハ再生装置 | |
JP2000301454A (ja) | 化学的機械研磨プロセス及びその構成要素 | |
WO2001062436A1 (fr) | Procede et appareil permettant de polir une partie circulaire exterieure a chanfrein d'une tranche | |
JP2006167908A (ja) | 重複する段差溝構造を有するcmpパッド | |
EP1084009B1 (en) | Cmp pad conditioner arrangement and method therefor | |
US20060079159A1 (en) | Chemical mechanical polish with multi-zone abrasive-containing matrix | |
CN106558529B (zh) | 浅沟槽隔离方法 | |
US20020081943A1 (en) | Semiconductor substrate and lithographic mask processing | |
JP2005322926A (ja) | 表面研磨方法および研磨材 | |
US5911111A (en) | Polysilicon polish for patterning improvement | |
KR100792066B1 (ko) | 반도체 웨이퍼의 평탄화 가공방법 | |
EP3304580B1 (en) | Methods for processing semiconductor wafers having a polycrystalline finish | |
JP2008021704A (ja) | 半導体装置の製造方法 | |
CN101244536A (zh) | 基板抛光方法、半导体装置及其制造方法 | |
CN102039555B (zh) | 研磨头装置 | |
JP2000158325A (ja) | 化学機械研磨の装置と方法 | |
CN116197821B (zh) | Cmp工艺中研磨垫修整方法 | |
US20070010176A1 (en) | Fixed abrasive pad having different real contact areas and fabrication method thereof | |
US6776870B2 (en) | Ditch type floating ring for chemical mechanical polishing | |
US20070062910A1 (en) | Complex CMP process and fabricating methods of STI structure and interconnect structure | |
KR100257427B1 (ko) | 반도체기판표면을연마하여평탄한표면형상을형성하기위한반도체기판연마방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111124 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111124 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091118 Termination date: 20190730 |