CN100546982C - 一种环状三苯胺有机分子场效应管材料 - Google Patents
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- 239000000463 material Substances 0.000 title claims abstract description 33
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 230000005669 field effect Effects 0.000 title description 19
- 239000000243 solution Substances 0.000 claims abstract description 30
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims abstract description 29
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000000047 product Substances 0.000 claims abstract description 17
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims abstract description 16
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims abstract description 8
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical class [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims abstract description 7
- 239000007864 aqueous solution Substances 0.000 claims abstract description 7
- 238000002360 preparation method Methods 0.000 claims abstract description 7
- 238000003756 stirring Methods 0.000 claims abstract description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims abstract description 6
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims abstract description 6
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims abstract description 5
- 238000001035 drying Methods 0.000 claims abstract description 5
- 239000000706 filtrate Substances 0.000 claims abstract description 5
- 239000012074 organic phase Substances 0.000 claims abstract description 5
- 238000010992 reflux Methods 0.000 claims abstract description 5
- 239000007787 solid Substances 0.000 claims abstract description 5
- 238000000967 suction filtration Methods 0.000 claims abstract description 5
- 238000010792 warming Methods 0.000 claims abstract description 5
- 238000000605 extraction Methods 0.000 claims abstract description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 7
- 238000004440 column chromatography Methods 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 238000001953 recrystallisation Methods 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- ZNZYKNKBJPZETN-WELNAUFTSA-N Dialdehyde 11678 Chemical compound N1C2=CC=CC=C2C2=C1[C@H](C[C@H](/C(=C/O)C(=O)OC)[C@@H](C=C)C=O)NCC2 ZNZYKNKBJPZETN-WELNAUFTSA-N 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229920002554 vinyl polymer Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000001299 aldehydes Chemical class 0.000 description 3
- AZUXXYCNTKYZJB-UHFFFAOYSA-N chloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[SiH2]Cl AZUXXYCNTKYZJB-UHFFFAOYSA-N 0.000 description 3
- 229960001701 chloroform Drugs 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 150000002431 hydrogen Chemical group 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- YSGZPEILUZVKDO-UHFFFAOYSA-N [F].C1(=CC=CC=C1)N(C1=CC=CC=C1)C1=CC=CC=C1 Chemical group [F].C1(=CC=CC=C1)N(C1=CC=CC=C1)C1=CC=CC=C1 YSGZPEILUZVKDO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical class C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- -1 phthalocyanine compound Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
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Abstract
一种环状三苯胺有机半导体材料,其制备方法如下:氮气气氛下,四氢呋喃溶液中加入锌粉,并加入四氯化钛和二氯甲烷组成的混合溶液,搅拌;升温至80-100℃回流反应0.5-2小时;将反应原料二醛基三苯胺或三苯胺二聚体、催化剂吡啶溶于步骤A溶液中,回流搅拌6-8小时;冷却至室温,向步骤B溶液中加入饱和碳酸氢钠水溶液,搅拌0.1-1小时;抽滤除去固体不溶物;滤液除去溶剂,剩余的溶液用二氯甲烷萃取;合并有机相,用无水硫酸钠干燥,过滤,除去溶液,得到目标产物。
Description
技术领域
本发明涉及一种用于场效应晶体管的有机半导体材料,具体地说,涉及一种环状三苯胺有机半导体材料。
本发明还涉及上述有机半导体材料的制备方法。
背景技术
有机场效应管(OFET)自从1986年首次出现以来(Tsumura,A.;Koezuka,H.;Ando,T.Appl.Phys.Lett.1986,49,1210),由于其在有源矩阵显示,有机集成电路,电子商标等方面的潜在应用价值得到了人们的广泛关注。与无机晶体管相比,有机场效应晶体管具有低成本,重量轻,柔韧性好等特点。近年来,有机场效应管取得了长足的发展,成为最为重要的有机电子器件之一。(Dimitrakopoulos and P.R.L.Malenfant,Adv.Mater.,2002,14,99-117;Kelley,T.W.,Baude P.F.,Gerlach C.,Ender D.E.,Muyres D.,Haase M.A.,Vogel D.E.,Theiss S.D.,Chem.Mater.2004,16,4413-4422;Sun Y.,Liu Y.Q.and Zhu D.B,J.Mater.Chem.,2005,15,53-65.).其中并五苯的场效应迁移率已经超过1.5cm2V-1s-1(Nelson,S.F.;Lin,Y.Y.;Gundlach,D.J.;Jackson,T.N.Appl.Phys.Lett.1998,72,1854),已经可以和无定形硅相媲美。
目前,性能较好的用作有机场效应管材料的p型小分子材料主要以下几种:并苯类,金属酞菁化合物类,噻吩类等。但这些材料也普遍存在稳定性差,在可见光范围吸收较强,不适合用于发光器件的驱动电路等问题。因此,设计综合性能优秀的有机场效应管材料仍是需要研究的课题。
基于三苯胺结构单元的有机半导体材料是一种常用的空穴传输材料,在光导,电致发光器件中有着广泛的应用,这类材料还具有稳定性好,在可见光区透明的特点。三苯胺具有不共面的分子结构,而且以往这类半导体材料多设计成线形、星形结构,使其固态时易于形成无定形态,但这种无定形结构不利于得到高载流子迁移率的材料,因此现有的这类材料很难应用于场效应晶体管。为得到高迁移率的材料,必须提高其在固态下排列的有序性。
发明内容
本发明的目的在于提供一种用于场效应晶体管的环状三苯胺有机半导体材料。
本发明的又一目的在于提供上述材料的制备方法。
为实现上述目的,本发明提供的环状三苯胺有机半导体材料,其结构如式1所示:
式中:R代表氢、烷基、烷氧基、腈基;n=1,2
本发明提供的环状三苯胺有机半导体材料能形成高质量的结晶状态的薄膜,可以作为具有高迁移率、高开关比的有机场效应管材料。
本发明提供的制备上述材料的方法,是以二醛基三苯胺或三苯胺二聚体为原料,通过Mcmurry偶联反应合成三苯胺乙烯基大环,将通常为线形、星形的三苯胺类有机材料,改为通过乙烯基连接的环状结构的环状三苯胺有机半导体材料,该材料的合成路线如式2所示:
式中:R可以是氢、烷基、烷氧基、腈基。
本发明的制备方法,其具体步骤如下:
A)氮气气氛下,将浓度为4-5g锌粉/100ml四氢呋喃溶液和浓度为10-20ml四氯化钛/100ml二氯甲烷溶液按体积比4∶1的比例进行混合,搅拌;升温至80-100℃回流反应0.5-2小时;
B)将反应原料二醛基三苯胺或三苯胺二聚体、催化剂吡啶溶于步骤A溶液中,回流搅拌6-8小时;其加入比例为:0.003摩尔原料∶9-10ml吡啶∶100ml步骤A溶液;
C)冷却至室温,向步骤B溶液中加入饱和碳酸氢钠水溶液,其加入量为每250ml步骤B溶液中加入80-100毫升饱和碳酸氢钠水溶液,搅拌0.1-1小时;抽滤除去固体不溶物;
D)步骤C得到的滤液除去溶剂,剩余的溶液用二氯甲烷萃取;合并有机相,用无水硫酸钠干燥,过滤,除去溶液,得到目标产物;
E)步骤D得到的产物经柱层析或二氯甲烷重结晶进行纯化。
本发明制备的材料可以采用如下方法进行场效应性能的检测:在真空度为4×10-4Pa的条件下以的速度将该产品蒸镀到经十八烷基氯硅烷(OTS)修饰的具有二氧化硅层的硅片上,或是配成三氯甲烷溶液,通过甩膜法,甩膜速率2000rpm,将产品均匀地甩在基片上,有机层厚度为50纳米。之后真空沉积金电极构造上电极结构。利用HP4140B半导体测试仪和MP1008探针台在空气中对器件性能进行测试。证明得到高迁移率和高开关比的有机场效应半导体材料。
本发明具有以下优点:
1.本发明制备的环状的三苯胺乙烯基有机分子材料具有优良的场效应性能,有很高的迁移率和开关比,且在空气中性质稳定,是一种优良的有机场效应管材料。本发明的产品是p型有机场效应晶体管材料。其空穴迁移率可以高达1.5×10-2cm2/Vs。其开关比达106-107,而且这些性能都是在空气中测量得到的。可以证明得到高迁移率和高开关比的有机场效应半导体材料。
2.本发明的工艺流程短,成本低廉。
附图说明
图1为以环状的三苯胺乙烯基分子为半导体层的场效应晶体管结构示意图;
图2为该类场效应晶体管的输出特性曲线;
图3为该类场效应晶体管的在源漏电压为-60V下的转移特性曲线。
具体实施方式
本发明是以锌粉为还原剂,在干燥的四氢呋喃中,将四氯化钛还原为单质钛,再以吡啶为催化剂,通过单质钛和醛基反应生成碳-碳双键。
实施例1:合成如下化合物(a)并测试
第一步,将锌粉(8.7g)放入500ml三口瓶中,加入干燥的四氢呋喃(200ml)。氮气保护下通过恒压滴液漏斗小心地缓慢加入由四氯化钛(7.2ml)和二氯甲烷(50ml)组成的混合溶液,并不停地搅拌。滴加完毕后,升温至80℃下回流反应一个小时。然后,将4,4’-二甲醛基三苯胺(1g)、吡啶(9ml)溶于四氢呋喃(100ml)中,用恒压漏斗逐滴地加入上述三口瓶。继续回流搅拌8个小时。冷却至室温后,向溶液中加入饱和碳酸氢钠水溶液(100ml),再搅拌半个小时。抽滤除去固体不溶物。将滤液减压旋去大部分溶剂,剩下的溶液用二氯甲烷(2×100ml)萃取。将有机相合并,用无水硫酸钠干燥过夜。过滤。将溶液旋干。柱层析得到较纯的黄色粉末状产品80mg,产率9%。
溶点:324℃.
高分辨质量分析(m/e):计算值538.2403,测量值538.2402.
第二步,对产品进行场效应性能的检测。在真空度为4×10-4Pa的条件下以的速度将该产品蒸镀到经十八烷基氯硅烷(OTS)修饰的具有二氧化硅层的硅片上,有机层厚度为50纳米,之后真空沉积金电极构造上电极结构。利用HP4140B半导体测试仪和MP1008探针台在空气中对器件性能进行测试。基于该产品的场效应迁移率可以高达1.5×10-2cm2V-1s-1,开关比达107。
实施例2:合成如下化合物(b)并测试
第一步,将锌粉(2g)放入500ml三口瓶中,加入干燥的四氢呋喃(150ml)。氮气保护下小心地通过恒压滴液漏斗缓慢加入由四氯化钛(1.6ml)和二氯甲烷(50ml)组成的混合溶液,并不停地搅拌。滴加完毕后,升温至80℃下回流一个小时。然后,将4,4’-二甲醛基三苯胺(1g)、吡啶(3ml)溶于四氢呋喃(100ml)中,用恒压漏斗逐滴地加入三口瓶。继续回流搅拌8个小时。冷却至室温后,向溶液中加入饱和碳酸氢钠水溶液(100ml),再搅拌半个小时。抽滤除去不溶固体。将滤液减压旋去大部分溶剂,剩下的溶液用三氯甲烷(2×100ml)萃取。将有机相合并,用无水硫酸钠干燥过夜。过滤。将溶液旋干。柱层析及二氯甲烷重结晶得到较纯的亮黄色粉末状产品210mg,产率22.1%。
溶点:216-218℃.
高分辨质量分析(m/e):计算值1248.7009,测量值1248.7028.
第二步,对产品进行场效应性能的检测。将产品配成三氯甲烷溶液,通过甩膜法,甩膜速率2000rpm,将产品均匀地甩在经十八烷基氯硅烷(OTS)修饰的具有二氧化硅层的硅片上,有机层厚度为50纳米。之后真空沉积金电极构造上电极结构。利用HP4140B半导体测试仪和MP1008探针台在空气中对器件性能进行测试。基于该产品的场效应迁移率可以高达2×10-3cm2V-1s-1,开关比达2×105。
Claims (3)
2、制备权利要求1所述环状三苯胺有机半导体材料方法,其步骤如下:
A)氮气气氛下,将浓度为4-5g锌粉/100ml四氢呋喃溶液和浓度为10-20ml四氯化钛/100ml二氯甲烷溶液按体积比4∶1的比例进行混合,搅拌;升温至80-100℃回流反应0.5-2小时;
B)将反应原料4,4′-二醛基三苯胺、催化剂吡啶溶于步骤A溶液中,回流搅拌6-8小时;其加入比例为:0.003摩尔原料∶9-10ml吡啶∶100ml步骤A溶液;
C)冷却至室温,向步骤B溶液中加入饱和碳酸氢钠水溶液,其加入量为每250ml步骤B溶液中加入80-100毫升饱和碳酸氢钠水溶液,搅拌0.1-1小时;抽滤除去固体不溶物;
D)步骤C得到的滤液除去溶剂,剩余的溶液用二氯甲烷萃取;合并有机相,用无水硫酸钠干燥,过滤,除去溶液,得到目标产物。
3、如权利要求2所述的方法,其中步骤D得到的产物经柱层析或二氯甲烷重结晶进行纯化。
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