CN100543537C - Substrate processing apparatus and use its substrate processing method using same - Google Patents
Substrate processing apparatus and use its substrate processing method using same Download PDFInfo
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- CN100543537C CN100543537C CNB2005100833478A CN200510083347A CN100543537C CN 100543537 C CN100543537 C CN 100543537C CN B2005100833478 A CNB2005100833478 A CN B2005100833478A CN 200510083347 A CN200510083347 A CN 200510083347A CN 100543537 C CN100543537 C CN 100543537C
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- Condensed Matter Physics & Semiconductors (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention discloses a kind of substrate processing apparatus and use its substrate processing method using same, this substrate processing apparatus comprises Treatment Solution divider, delivery unit and controller, the Treatment Solution divider provides Treatment Solution on substrate, delivery unit transmits substrate, and controller control delivery unit makes substrate be transmitted with heeling condition.The axle rotary plate that extends with respect to the direction of transfer that is parallel to substrate makes it to lateral tilt.This rotation can be carried out at two reverse directions in an alternating manner.This equipment can not considered the size of substrate and be used for treatment substrate equably.
Description
Technical field
The present invention relates to the substrate processing method using same of a kind of substrate processing apparatus and this equipment of use.
Background technology
LCD (LCD) comprises liquid crystal board, be formed with above this liquid crystal board has thin film transistor (TFT) (TFT) thin film transistor base plate, above be formed with the filter substrate of color-filter layer and be arranged on liquid crystal layer between this two substrates.Liquid crystal board itself is not luminous, so usually back light unit is set so that provide light to liquid crystal board in TFT substrate back.The light quantity of back light unit institute transmission depends on the orientation of liquid crystal molecule.
In addition, LCD also comprises driving circuit and grid and data driver, and driving circuit drives each pixel of liquid crystal board, and grid and data driver receive drive signal and voltage is supplied to data line and gate line from driving circuit.
Making filter substrate and TFT substrate must be by providing the Treatment Solution treatment substrate.Particularly, making substrate must have developing procedure, utilizes the photographic layer of exposure to form photosensitive pattern; Etching work procedure is arranged, use the photosensitive pattern that forms in the developing procedure to form metal layer pattern or electrode pattern; Also the flushing operation will be arranged, flushing is through the substrate of developing procedure or etching work procedure.These operations are used developing solution, etching solution and DI (deionization) water respectively.
Treatment substrate typically is included in and transmits (transport) substrate when being sprayed onto Treatment Solution on the substrate.In transmitting operation, substrate is in obliquity, in order to removing Treatment Solution.Though help to remove Treatment Solution with the heeling condition moving substrate, but caused such problem: Treatment Solution flows to a low end from the high end of substrate, and accumulate in the inclination substrate than lower part.This thickness difference that causes Treatment Solution to be coated with between the high-end and low side of gathering at substrate.Effective spray pressure that this uneven thickness causes again being applied on the substrate is higher than it than lower part in the higher part of inclination substrate.
The difference of spray pressure causes the inhomogeneous of substrate surface processing.Along with substrate size becomes big, unevenness is just poorer.The problem of this inhomogeneous processing can not take place when using infusion process, and substrate is dipped in the Treatment Solution in infusion process.But, as you know, when substrate serious offense certain size, just be difficult to carry out infusion process.
Recently, along with substrate becomes bigger, the homogeneity of line width and etching outline becomes a problem.Treatment substrate is to realize the inhomogeneity key factor of circuit equably.But, if treatment conditions difference between the substrate different piece just is difficult to realize uniform processing substrate.People expect to have a kind of no matter substrate size how can both its method of uniform treatment.
Summary of the invention
Therefore, an aspect of of the present present invention provides a kind of substrate processing apparatus of uniform treatment substrate.
Another aspect of the present invention provides a kind of substrate processing method using same of uniform treatment substrate.
Aforementioned and/or other aspects of the present invention are also by providing a kind of substrate processing apparatus to realize, this substrate processing apparatus comprises Treatment Solution divider, delivery unit and controller, the Treatment Solution divider is supplied Treatment Solution on substrate, delivery unit transmits substrate, and controller control delivery unit makes substrate be transmitted under heeling condition.This heeling condition is by rotating realization with respect to the axle that is parallel to the extension of substrate direction of transfer.Substrate can be in the mode that replaces two reverse direction medium dips.
Another aspect of the present invention is that a kind of substrate processing apparatus will be provided, this equipment comprises delivery unit and Treatment Solution divider, delivery unit transmits substrate with heeling condition, and the Treatment Solution divider is in delivery unit top, it the inclination substrate than lower part than spraying Treatment Solution more strong in the higher part of inclination substrate.
According to embodiments of the invention, the Treatment Solution divider comprises a plurality of nozzles, the inclination substrate than lower part on spray Treatment Solution nozzle be provided with closelyer than the nozzle of sprinkling Treatment Solution on the higher part at the inclination substrate from substrate.
According to embodiments of the invention, the Treatment Solution divider comprises Treatment Solution pipe and a plurality of nozzle, and the Treatment Solution pipe is arranged on respect to the substrate direction of transfer transversely, and nozzle is connected with the Treatment Solution pipe.
According to embodiments of the invention, the Treatment Solution pipe can be regulated its pitch angle.
According to embodiments of the invention, Treatment Solution pipe and substrate are provided with abreast, and the nozzle that sprays Treatment Solution at the inclination substrate on than lower part is longer than the nozzle that sprays Treatment Solution on the higher part of inclination substrate.
According to embodiments of the invention, the Treatment Solution pipe is parallel to the substrate setting, and along with nozzle apart from inclination substrate more and more nearer than lower part, nozzle is just more and more longer.
According to embodiments of the invention, the Treatment Solution pipe is nearer apart from the higher part of inclination substrate than the lower part ratio apart from the inclination substrate.
According to embodiments of the invention, the Treatment Solution divider comprises nozzle and Treatment Solution pipe, nozzle have first nozzle that sprays Treatment Solution on the higher part of inclination substrate and the inclination substrate than lower part on spray second nozzle of Treatment Solution, the Treatment Solution pipe has first Treatment Solution pipe that links to each other with first nozzle and the second Treatment Solution pipe that links to each other with second nozzle.
According to embodiments of the invention, the Treatment Solution divider comprises a plurality of Treatment Solution pipes and a plurality of nozzle, and the Treatment Solution pipe is parallel to the direction of transfer setting of substrate, and nozzle links to each other with the Treatment Solution pipe.
According to embodiments of the invention, the distance between higher part of inclination substrate and the Treatment Solution pipe than inclination substrate than the distance between lower part and the Treatment Solution pipe.
According to embodiments of the invention, the nozzle that sprays Treatment Solution at the inclination substrate on than lower part is bordering on the nozzle that sprays Treatment Solution on the higher part of inclination substrate apart from substrate.
Another aspect of the present invention provides a kind of substrate processing method using same, comprising: preparation substrate and Treatment Solution, and with heeling condition transmission substrate, wherein heeling condition is by realizing with respect to the axle rotary plate that is parallel to the extension of substrate direction of transfer.Rotary plate on two reverse directions in an alternating manner when receiving Treatment Solution.
According to embodiments of the invention, described transmission comprises forward and transmits rearward substrate at least once.
According to embodiments of the invention, the pitch angle of substrate is 3 ° to 7 °.
According to embodiments of the invention, Treatment Solution is one of developing solution, etching solution and rinse solution.
Another aspect of the present invention provides a kind of substrate processing method using same, comprising: in first processing unit, provide Treatment Solution to substrate when transmitting substrate, wherein make substrate first pitch angle that tilts with respect to being parallel to axle rotation that the substrate direction of transfer extends.This method also comprises: in second processing unit, provide Treatment Solution to substrate when transmitting substrate, wherein substrate tilts with second pitch angle less than first pitch angle; And, in the 3rd processing unit, when transmitting substrate, provide Treatment Solution to substrate, wherein substrate tilts with the 3rd pitch angle, and the 3rd pitch angle and first pitch angle are reverse.
According to embodiments of the invention, in second processing unit, flatly transmit substrate.
According to embodiments of the invention, first pitch angle equals the 3rd pitch angle.
Another aspect of the present invention provides a kind of substrate processing method using same, comprise and transmit substrate and Treatment Solution is provided, by with respect to making substrate to lopsidedness, be applied to the inclination substrate and be higher than the pressure that is applied on the higher part of inclination substrate than the spray pressure of the Treatment Solution on the lower part and make when Treatment Solution is provided along being parallel to the axle rotation that the substrate direction of transfer extends.
Description of drawings
Pile one exemplary embodiment in conjunction with the drawings and carry out following description, above-mentioned and/or other aspects of the present invention and advantage will become and understand and be easier to and understand.In the accompanying drawing:
Fig. 1 is the sectional view according to the substrate processing apparatus of first embodiment of the invention;
Fig. 2 is the skeleton view of showing according to the substrate processing apparatus operation of first embodiment of the invention;
Fig. 3 is to use the process flow diagram according to the substrate processing method using same of the substrate processing apparatus of first embodiment of the invention;
Fig. 4 is the skeleton view of displaying according to the another kind operation of the substrate processing apparatus of first embodiment of the invention;
Fig. 5 is the process flow diagram of another kind of utilization according to the substrate processing method using same of the substrate processing apparatus of first embodiment of the invention;
Fig. 6 is the skeleton view according to the essential part of the substrate processing apparatus of second embodiment of the invention;
Fig. 7 is the side view according to the essential part of the substrate processing apparatus of second embodiment of the invention;
Fig. 8 is the side view according to the essential part of the substrate processing apparatus of third embodiment of the invention;
Fig. 9 is the side view according to the essential part of the substrate processing apparatus of fourth embodiment of the invention;
Figure 10 is the skeleton view according to the essential part of the substrate processing apparatus of fifth embodiment of the invention;
Figure 11 is the side view according to the essential part of the substrate processing apparatus of fifth embodiment of the invention.
Embodiment
To their example be shown in the accompanying drawing in detail with reference to one exemplary embodiment of the present invention now, Reference numeral similar in institute's drawings attached is indicated similar element.Embodiment is described so that explain the present invention below with reference to accompanying drawing.
According to this paper usage, substrate " forward and backward " moves and is meant that substrate can move at both direction along direction of transfer.Substrate " inclination " or " to lopsidedness " are meant with respect to being parallel to the axle rotary plate that direction of transfer extends.One pitch angle and another angle " oppositely " are meant, with respect to the angle of same reference line metering
And the angle-
Between relation.
First embodiment
To substrate processing apparatus according to first embodiment of the invention be described with reference to Fig. 1 and 2.
Each of processing unit 10a, 10b, 10c all has process chamber (tub), and they are connected to adjacent processing unit 10a, 10b, 10c.Between adjacent processing unit 10a, 10b and 10c, be equipped with passage 40, between processing unit, transmit substrate 100 by this passage 40.
Set handling solution dispenser 20 in the higher part of each processing unit 10a, 10b, 10c is to provide Treatment Solution 23 to substrate 100.Treatment Solution divider 20 provides Treatment Solution 23 by spraying to substrate 100.A plurality of Treatment Solution dividers 20 are set, so that on whole base plate 100, supply Treatment Solution 23 equably on the transmission route of substrate 100.Though do not illustrate among the figure, Treatment Solution divider 20 can be connected to the Treatment Solution storage tank.
According to the purposes of treatment facility 1, Treatment Solution 23 can be developing solution, etching solution or rinse solution.
If Treatment Solution 23 is a developing solution, use the not organic base based sols of containing metal composition, the organic base composition is eliminated by the flushing operation.
If Treatment Solution 23 is an etching solution, can change to some extent according to the accurate component of the composition etching solution of etching target.For example, the etching solution that is used for Al or Mo comprises phosphoric acid, nitric acid and acetic acid.The etching solution that is used for Ta comprises hydrofluorite and nitric acid.The etching solution that is used for Cr comprises ammonium nitrate caesium (ammonium nitrate caesium) and nitric acid.The etching solution that is used for ITO (tin indium oxide) comprises hydrochloric acid, nitric acid and iron chloride.
If Treatment Solution 23 is a rinse solution, Treatment Solution 23 is DI (deionization) water typically.For rapid flushing, processing unit 10a, 10b and 10c can not only comprise Treatment Solution divider 20, also comprise known " water cutter (aqua knife) ", and it is formed with nozzle in the direction perpendicular to substrate 100 direction of transfers.
Controller control delivery unit 30 makes substrate 100 alternately be transmitted under the state that a side direction tilts.In Fig. 2, for the transverse axis of 0 ° of the expression in the reference frame 35, first tiltangle 1 has opposite direction with second tiltangle 2, and each pitch angle can be 3 ° to 7 °.If the pitch angle is less than 3 °, Treatment Solution 23 is removed slowly excessively.On the other hand, if the pitch angle greater than 7 °, the time that Treatment Solution keeps on substrate 100 is too short.In some cases, tiltangle 1 and θ 2 can equate.
Although not shown, delivery unit 30 can comprise the inclination control member, and it is controlling the lateral tilt direction and the pitch angle of substrate 100.The inclination control member can comprise piston apparatus.
Now, will the substrate processing method using same that utilize according to the treatment facility of first embodiment of the invention be described with reference to figure 3.For example, it is as described below to be used on substrate 100 forming the operation of grid circuit.
Gate metal is deposited upon on the insulated substrate and with photosensitive solution and sprays.Then, remove solvent in the photosensitive solution, form photographic layer by this by soft roasting (soft-bake) technology.Subsequently, removed the photographic layer that desolvates by the mask exposure that specific pattern is arranged.In operation subsequently, develop then.
At first, in step 100, the substrate 100 that is placed on the delivery unit 30 is moved to the first processing unit 10a.When substrate 100 is carried the first processing unit 10a, the Treatment Solution 23 that beginning is sprayed from Treatment Solution divider 21 to substrate 100 supplies, i.e. developing solution.After receiving developing solution, substrate 100 photographic layer that just in step 200, develops.If what use is negative photosensitive solution, the photographic layer of unexposed area is just also dissolved with Treatment Solution 23 reactions so.If what use is the positivity photosensitive solution, the photographic layer of exposure area is just also dissolved with Treatment Solution 23 reactions so.In step 200, substrate 100 is transmitted to the second processing unit 10b from the first processing unit 10a along first direction of transfer.Delivery unit 30 transmits substrate 100 with the lateral tilt state, and this state forms a pitch angle.Because substrate 100 tilts, it is long in substrate 100 higher parts than the time ratio of lower part that Treatment Solution 23 is stayed inclination substrate 100.
Behind first direction of transfer transmission substrate, 100 certain hours, delivery unit 30 transmits the opposite direction (step 300) that substrate 100, the second direction of transfers are first direction of transfers on second direction of transfer.Transmit on second direction of transfer in the substrate 100, delivery unit 30 tilts to form second pitch angle substrate 100.If first pitch angle is
, second pitch angle can be in the reference frame 35-
(referring to Fig. 2).Because second pitch angle is on the opposite direction at first pitch angle, the end portion when substrate 100 is inclined to first pitch angle has just become the upper part when substrate 100 is inclined to second pitch angle.Similarly, the upper part when substrate 100 is inclined to first pitch angle has just become substrate 100 along reversal dip, the end portion when promptly being inclined to second pitch angle.Therefore, the zone that is covered by a large amount of Treatment Solution 23 in step 200 just contacts a spot of Treatment Solution 23 in step 300.Otherwise, in step 200, in step 300, just contacted a large amount of Treatment Solution 23 by the zone that is covered by a small amount of Treatment Solution 23.
Finish in step 300 after the transmission of second direction of transfer, delivery unit 30 send (step 400) with substrate 100 to passback along first direction of transfer.At this moment, the vergence direction of substrate 100 switches back first vergence direction.Even switching vergence direction, substrate 100 can not drop from delivery unit 30 yet because in the couple positioned opposite of substrate 100 side roller 33.
In step 400, when substrate 100 moved arrival passage 40 along first direction of transfer after, in step 500, delivery unit 30 transported substrate 100 to adjacent processing unit 10b.Substrate 100 is transported to after the second processing unit 10b, repeats aforementioned process, and substrate 100 is transported to the 3rd processing unit 10c.
During this time, another substrate 100 is transferred into the first processing unit 10a and repeats said process.Like this, can handle a plurality of substrates simultaneously with a treatment facility 1, all substrates at a time then are in different the processing stage.
By these operations, when substrate 100 when the 3rd processing unit 10c comes out, just finished the development of photographic layer.Because substrate 100 is lateral tilts in an alternating manner in developing process, thereby solved the problem of the inhomogeneous contact substrate 100 of developing solution at least in part.
After the developing procedure, substrate 100 washes operation, etching work procedure and another flushing operation.These operations are similar to above-mentioned developing procedure.
Because Treatment Solution 23 contacts whole base plate 100 equably, therefore having reduced the grid circuit lacks inhomogeneity problem.
Referring now to Figure 4 and 5 the another kind of substrate processing method using same that utilizes according to the substrate processing apparatus of first embodiment of the invention is described.
In step 110, the substrate 100 that is placed on the delivery unit 30 is sent among the first processing unit 10a.When substrate 100 is carried the first processing unit 10a, the Treatment Solution 23 that beginning is sprayed from Treatment Solution divider 21 to substrate 100 supplies, i.e. developing solution, and the photographic layer that in step 210, develops.Transmit substrate 100 from the first processing unit 10a to the second processing unit 10b, and this direction is called as first direction of transfer.In addition, substrate 100 is being transmitted the degree of inclination identical with first pitch angle (θ 3) in lateral tilt.The higher part than the time ratio substrate 100 of lower part contact Treatment Solution 23 of substrate 100 is long.
After step 210, in step 310, substrate 100 is sent to the second processing unit 10b.Flatly transmit substrate 100 and in step 410, carry out development treatment.In other words, second tiltangle 4 in the second processing unit 10b has become 0 °.Therefore, Treatment Solution 23 contact substrate 100 equably.As among the first processing unit 10a, delivery unit 30 is moving substrate 100 forward or backward.
Next, in step 510, substrate 100 is moved on the 3rd processing unit 10c.
When being sent to the 3rd processing unit 10c, in step 610 by delivery unit 30 with substrate 100 to lateral tilt 1 the 3rd tiltangle 5.The 3rd tiltangle 5 and first tiltangle 3 have onesize, but opposite with first tiltangle, 3 directions.That is be that the part of the substrate 100 of lower end has become the upper end in the first processing unit 10a in the 3rd processing unit 10c.On the contrary, be that the part of substrate 100 of upper end has become the lower end in the first processing unit 10a in the 3rd processing unit 10c.Therefore, the zone that is covered by a large amount of Treatment Solution 23 in step 210 just contacts a spot of Treatment Solution 23 in step 610, and the zone that is covered by a small amount of Treatment Solution 23 in step 210 just contacts a large amount of Treatment Solution 23 in step 610.As top those situations, delivery unit 30 is moving substrate 100 forward or backward.
During this time, another substrate 100 is written into the first processing unit 10a, and repeats said process.
Second embodiment
Below with reference to Fig. 6 and 7 substrate processing apparatus of describing according to second embodiment of the invention.
The spray that now description is applied to the Treatment Solution 23 on the substrate 100 is pressed.
As shown in Figure 7, place substrate 100 inclinations one predetermined angle theta 6 on the delivery unit 30, thereby can remove Treatment Solution 23 from substrate 100 rapidly.In an embodiment, the tiltangle 6 of substrate 100 can be 3 ° to 7 °.
The Treatment Solution pipe 21 that the is arranged at substrate 100 tops tiltangle 7 that also tilts, the tiltangle 7 of Treatment Solution pipe 21 is greater than the tiltangle 6 of substrate 100.The tiltangle 7 of Treatment Solution pipe 21 is adjustable.Because the difference between the pitch angle, between the higher part A of inclination substrate 100 and the nozzle 22 apart from d1 greater than inclination substrate 100 than between lower part B and the nozzle 22 apart from d2.Therefore,, be applied to inclination substrate 100 and press and to press bigger than the spray that is applied to inclination substrate 100 higher part A all under the situation with the work of same spray pressure at each nozzle 22 than the spray of lower part B.
Utilization is as described below according to the substrate processing method using same of the substrate processing apparatus 1 of second embodiment of the invention.
When substrate 100 is transmitted unit 30 and is sent to Treatment Solution divider 20 times, on whole base plate 100, spray Treatment Solution 23 equably by nozzle 22.The Treatment Solution 23 that is sprayed on the higher part A of inclined surface of substrate 100 is handled higher part A, and flow to downwards subsequently substrate 100 inclined surface than lower part B.Be sprayed onto the higher part A of inclination substrate 100 and after handling substrate 100, flow to downwards than lower part B than the Treatment Solution on the zone between the lower part B 23.So, Treatment Solution 23 just accumulates in than on the lower part B, then is immersed in the Treatment Solution 23 than lower part B.As a result, higher part A is handled by spraying Treatment Solution 23, then is to be submerged in Treatment Solution 23 to gather in the pond (pool) that forms processed than lower part B.The processing of substrate 100 does not have homogeneity.
In a second embodiment, the substrate 100 that can reduce to tilt than between lower part B and the nozzle 22 apart from d2, by spray handle inclination substrate 100 than lower part B, thereby the spray that improves the Treatment Solution 23 that is applied to substrate 100 is pressed.In addition, because Treatment Solution 23 powerful sprays are pressed, accumulate in than the Treatment Solution on the lower part B 23 and removed rapidly from substrate 100.Utilize this structure, Treatment Solution 23 is sprayed onto on the whole base plate 100, by this treatment substrate 100 equably.
After finishing above-mentioned processing, substrate 100 is sent to subsequent processing.If this processing is a developing procedure, then subsequent processing can be flushing operation or etching work procedure.If this processing is an etching work procedure, subsequent processing can be the flushing operation.If this processing is the flushing operation, subsequent processing can be a drying process.
The 3rd embodiment
Referring now to the substrate processing apparatus of Fig. 8 description according to third embodiment of the invention.
In this embodiment, the tiltangle 6 of substrate 100 is identical with the tiltangle 8 of Treatment Solution pipe 21.Near the B of lower end nozzle 22 is done longlyer than near the nozzle the upper end A 22.It is nearer when so, long nozzle 22 is apart from inclination substrate 100 more identical than near the nozzle nozzle 22 length and the higher part A 22 than lower part B.Utilize this structure, will compare long between lower part B and the nozzle 22 apart from d3 between the higher part A of substrate 100 and the nozzle 22 apart from d4.Spray Treatment Solution 23 if each nozzle 22 is all pressed with identical spray, the spray than lower part B that is applied to inclination substrate 100 is so pressed more powerful than higher part A, by this treatment substrate 100 equably.
The 4th embodiment
Referring now to the substrate processing apparatus of Fig. 9 description according to fourth embodiment of the invention.
The tiltangle 6 of substrate 100 is identical with the tiltangle 8 of Treatment Solution pipe 21.Treatment Solution pipe 21 comprises the first Treatment Solution pipe 21a and the second Treatment Solution pipe 21b, the first Treatment Solution pipe 21a be higher part A supply Treatment Solution 23, the second Treatment Solution pipe 21b of inclination substrate 100 be inclination substrate 100 than lower part B supply Treatment Solution 23.Nozzle 22 comprises first nozzle 22a that links to each other with the first Treatment Solution pipe 21a and the second nozzle 22b that links to each other with the second Treatment Solution pipe 21b.Although do not illustrate in the drawings, each of the first Treatment Solution pipe 21a and the second Treatment Solution pipe 21b all is connected to corresponding Treatment Solution pump, and this pump is supplied Treatment Solution 23 under different pressure.In the 4th embodiment, the spray pressure that is higher than the Treatment Solution of spraying from the first nozzle 22a that links to each other with the first Treatment Solution pipe 21a is pressed in the spray of the Treatment Solution 23 of spraying from the second nozzle 22b that links to each other with the second Treatment Solution pipe 21b.As a result, the spray than the Treatment Solution 23 of lower part B that is applied to inclination substrate 100 is pressed and is higher than higher part A, by this treatment substrate 100 equably.
The 5th embodiment
Referring now to Figure 10 and 11 substrate processing apparatus of describing according to fifth embodiment of the invention.
Along with Treatment Solution pipe 21 apart from inclination substrate 100 more and more nearer than lower part B, the distance between Treatment Solution pipe 21 and the substrate 100 is diminishing.So, between the higher part A of inclination substrate 100 and the nozzle 22 apart from d5 greater than than between lower part B and the nozzle 22 apart from d6.Because the variation of spacing distance, be sprayed at substrate 100 inclined surface than the Treatment Solution on the lower part B 23 more powerful than on higher part A, treatment substrate 100 equably by this.
Above embodiment can improve in various manners.For example, the pitch angle of substrate and Treatment Solution pipe can be different, and the length of nozzle is variable.In addition, the lateral tilt angle of substrate on either direction can be pressed and regulate along with the spray of Treatment Solution, to obtain required uniformity coefficient.
Although the substrate that the foregoing description is used with LCD is an example, substrate can also be the flat-panel monitor of picture OLED (Organic Light Emitting Diode) or the substrate of semiconductor wafer.
Although showed and described several embodiments of the present invention, those skilled in the art is to be understood that, need not to break away from of the present invention away from and spirit, can make variation in these embodiments, and scope of the present invention limits in claim or its important document of equal value.
Claims (8)
1. substrate processing apparatus comprises:
The Treatment Solution divider of supply Treatment Solution on substrate;
Transmit the delivery unit of substrate; And
Control the controller of described delivery unit, make described substrate under heeling condition, be transmitted, described heeling condition is rotated by the axle that extends with respect to the direction of transfer that is parallel to described substrate and realizes that wherein said rotation is carried out at two reverse directions in an alternating manner.
2. substrate processing method using same comprises:
Preparation substrate and Treatment Solution; And
Transmit described substrate with heeling condition, wherein said heeling condition is to realize that by the described substrate of axle rotation that extends with respect to the direction of transfer that is parallel to described substrate wherein said substrate rotates in an alternating manner when receiving Treatment Solution on two reverse directions.
3. substrate processing method using same as claimed in claim 2, wherein said transmission comprise forward and transmit rearward described substrate.
4. substrate processing method using same as claimed in claim 2, wherein said heeling condition has 3 ° to 7 ° pitch angle.
5. substrate processing method using same as claimed in claim 2, wherein said Treatment Solution are one of developing solution, etching solution and rinse solution.
6. substrate processing method using same comprises:
When transmitting a substrate that tilts with first pitch angle, in first processing unit, provide Treatment Solution to described substrate, realize by the axle rotation of extending with respect to the direction of transfer that is parallel to described substrate at described first pitch angle;
When transmitting the described substrate that tilts with second pitch angle, in second processing unit, provide described Treatment Solution to described substrate, described second pitch angle is less than described first pitch angle; And
When transmitting the described substrate that tilts with the 3rd pitch angle, in the 3rd processing unit, provide described Treatment Solution to described substrate, described the 3rd pitch angle and described first pitch angle are reverse.
7. substrate processing method using same as claimed in claim 6, the horizontal transmission in described second processing unit of wherein said substrate, thus described second pitch angle is zero.
8. substrate processing method using same as claimed in claim 6, the wherein said first pitch angle size equals described the 3rd pitch angle.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040055951A KR20060007187A (en) | 2004-07-19 | 2004-07-19 | Method for processing substrate and apparatus therefor |
| KR55951/04 | 2004-07-19 | ||
| KR7483/05 | 2005-01-27 | ||
| KR13487/05 | 2005-02-18 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101601368A Division CN101615576B (en) | 2004-07-19 | 2005-07-12 | Substrate treating apparatus and substrate treating method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1725074A CN1725074A (en) | 2006-01-25 |
| CN100543537C true CN100543537C (en) | 2009-09-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100833478A Expired - Fee Related CN100543537C (en) | 2004-07-19 | 2005-07-12 | Substrate processing apparatus and use its substrate processing method using same |
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| Country | Link |
|---|---|
| KR (1) | KR20060007187A (en) |
| CN (1) | CN100543537C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104785401A (en) * | 2015-05-13 | 2015-07-22 | 合肥京东方光电科技有限公司 | Spraying device and spraying method |
| CN110573445A (en) * | 2017-05-09 | 2019-12-13 | 日本电气硝子株式会社 | Glass plate conveying device and glass plate manufacturing method |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5265099B2 (en) * | 2006-09-11 | 2013-08-14 | オリンパス株式会社 | Board inspection equipment |
| KR100783069B1 (en) * | 2007-02-16 | 2007-12-07 | 세메스 주식회사 | Apparatus for transferring a substrate and apparatus for treating the substrate including the same |
| KR100902615B1 (en) * | 2007-09-27 | 2009-06-11 | 세메스 주식회사 | Substrate supporing unit and substrate processing apparatus |
| CN102404939A (en) * | 2010-09-17 | 2012-04-04 | 富葵精密组件(深圳)有限公司 | Wet processing device and wet processing method |
| KR20120053319A (en) * | 2010-11-17 | 2012-05-25 | 삼성모바일디스플레이주식회사 | Cleaning system for substrate and clening method for the same |
| CN103324038A (en) * | 2013-06-25 | 2013-09-25 | 京东方科技集团股份有限公司 | Developing device and developing method |
| KR101581319B1 (en) * | 2013-07-31 | 2015-12-31 | 세메스 주식회사 | Substrate treating apparatus and method |
| KR102245499B1 (en) * | 2014-02-03 | 2021-04-29 | 삼성디스플레이 주식회사 | Developing apparatus and developing method using the same |
| CN113292246B (en) * | 2021-06-02 | 2022-05-17 | 中建材玻璃新材料研究院集团有限公司 | Continuous production device for glass thinning |
| CN118403753B (en) * | 2024-07-02 | 2024-09-27 | 杭州吉达汽车配件有限公司 | Surface coloring spraying device for automobile label production and spraying method thereof |
-
2004
- 2004-07-19 KR KR1020040055951A patent/KR20060007187A/en not_active Application Discontinuation
-
2005
- 2005-07-12 CN CNB2005100833478A patent/CN100543537C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104785401A (en) * | 2015-05-13 | 2015-07-22 | 合肥京东方光电科技有限公司 | Spraying device and spraying method |
| CN110573445A (en) * | 2017-05-09 | 2019-12-13 | 日本电气硝子株式会社 | Glass plate conveying device and glass plate manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1725074A (en) | 2006-01-25 |
| KR20060007187A (en) | 2006-01-24 |
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