CN100541849C - Semiconductor light-emitting elements - Google Patents
Semiconductor light-emitting elements Download PDFInfo
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- CN100541849C CN100541849C CNB2007101808877A CN200710180887A CN100541849C CN 100541849 C CN100541849 C CN 100541849C CN B2007101808877 A CNB2007101808877 A CN B2007101808877A CN 200710180887 A CN200710180887 A CN 200710180887A CN 100541849 C CN100541849 C CN 100541849C
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Abstract
The bed thickness that the invention provides the light removing layer does not have attenuation and by the semiconductor light-emitting elements of matsurfaceization.For this semiconductor light-emitting elements, have a plurality of semiconductor layers that comprise active layer (6) and light removing layer (4), has reflective metals rete (11), above-mentioned smooth removing layer 4 comprises a plurality of layers of (23), (24) that proportion of composing is different, and these a plurality of layers (23), (24) all are formed with concavo-convex (22) that are used to make first type surface S matsurfaceization.
Description
Technical field
The bed thickness that the present invention relates to the light removing layer does not have attenuation and by the semiconductor light-emitting elements of matsurfaceization.
Background technology
About light-emitting diode (LED),, thereby can make blueness, green, orange, yellow, red contour briliancy LED in recent years owing to the high-quality crystallization that can utilize MOVPE method growing GaN system and AlGaInP system as semiconductor light-emitting elements.Be accompanied by the high briliancyization of LED, purposes expands to the stop lamp of automobile and backlight liquid crystal display etc., and demand increases year by year.
By the MOVPE method can the growing high quality crystallization since, the luminous efficiency of light-emitting component inside is near the limiting value of theoretical value.But, still lower from light-emitting component to the light taking-up efficient of outside, wait in expectation and improve light taking-up efficient.
For example high briliancy red LED is formed by the AlGaInP based material, becomes the double-heterostructure with following each layer: n type AlGaInP layer, the p type AlGaInP layer that is made of the AlGaInP based material of forming that has lattice match on the GaAs of conductivity substrate and be clipped in the active layer as the part of illuminating part that is made of AlGaInP or GaInP between them.At this, so-called AlGaInP based material is for being the general name of the different various materials of principal component, proportion of composing or additive with AlGaInP.In the semiconductor light-emitting elements that has used the AlGaInP based material, can also and use materials such as GaInP, GaP.
This semiconductor light-emitting elements is because the band gap of GaAs substrate is narrower than the band gap of active layer, therefore, absorbed by the GaAs substrate from the light majority of active layer, and light takes out efficient to be reduced.
As its countermeasure, following method is arranged: the laminated reflective film structure sheaf that formation is made of the different semiconductor of refractive index between active layer and GaAs substrate reflects the light towards the GaAs substrate, thereby reduces the light absorption of light at the GaAs substrate, improves light and takes out efficient.But,, only reflect the light that the laminated reflective film structure sheaf is had the incidence angle of qualification for this method.That is to say, only can reflect a part of light, be difficult to fully improve and take out efficient towards the GaAs substrate.
Thus, following method is disclosed in TOHKEMY 2002-217450 communique: behind the semiconductor light-emitting elements that the double-heterostructure that making is made of the AlGaInP based material partly forms by growth on growing with the GaAs substrate, support to paste above-mentioned double-heterostructure part on the substrate at Si, GaAs etc. across the metal level that reflectivity is high, remove GaAs substrate used in the growth subsequently.According to this method, owing to use metal, need not select to carry out the reflection of high reflectance with respect to the incidence angle in reflector as the reflector.Therefore, comparing with above-mentioned formation laminated reflective film structure sheaf can high briliancyization.That is to say, can high briliancyization by more effectively taking out the light that produces at active layer.
Fig. 5 is the cross section structure schematic diagram of conventional semiconductor light-emitting component.As shown in Figure 5, conventional semiconductor light-emitting component 101 comprises successively from the diagram top: part covers first electrode 102 of light removing layer, only be formed on first electrode 102 under and cover the part identical with first electrode 102, band-gap energy is less than active layer and to from the opaque first electrode side contact layer 103 of the light of active layer, form the first type surface of the first covering side, penetrate the light removing layer 104 that enters the light of the first covering side from active layer to the outside, first covering 105 as one of 2 coverings that clip active layer, be clipped in first, the active layer 106 of the generation light between second covering, second covering 107 as another covering, be present in the interlayer 108 between second covering and the reflective metals rete side contact layer, reflective metals rete side contact layer 109, oxide skin(coating) 110, reflection is from the reflection of light metallic diaphragm 111 of active layer 106 towards the second electrode side between second covering 107 and second electrode, metal close binder 112, be used to paste the support substrate 113 of double-heterostructure part, cover second electrode 114 of the opposing face of first type surface.
Light removing layer 104 is also referred to as Window layer.
Oxide skin(coating) 110 has the junction surface 115 of the ohmic contact that is dispersed in aptly in the face that joins with reflective metals rete 111 and forms, and the part that is not the junction surface 115 of ohmic contact is called the junction surface 116 of non-ohmic contact.
Reflective metals rete side contact layer 109 has 3 layers 117,118 and 119 different to the additive of material, the additive of the material of the interlayer side contact layer 117 of joining with interlayer 108 in these 3 layers is Mg, the additive of the material of the oxide skin(coating) side contact layer 119 of joining with oxide skin(coating) 110 is Zn, and the material that is arranged at the middle contact layer 18 between interlayer side contact layer 117 and the oxide skin(coating) side contact layer 119 does not have positive additive.
Be called double-heterostructure part 120 from the first electrode side contact layer 103 to reflective metals rete side contact layer 109.In addition, also first covering 105, active layer 106, second covering 107 are collectively referred to as luminescent layer 121 sometimes.
The semiconductor light-emitting elements 101 of Fig. 5 is by being provided with reflective metals rete 111, thereby do not take out light from the first type surface (opposing face) that a side of supporting substrate 113 is arranged, and only the first type surface from the side that forms light removing layer 104 takes out light.
The reflective metals rete 111 of configuration has high reflectance to the light from active layer 106 certainly between double-heterostructure part 120 and support substrate 113, must obtain ohmic contact with the double-heterostructure part 120 that mainly is made of the AlGaInP based material simultaneously.But,, be difficult to directly and the AlGaInP based material is obtained ohmic contact for metals such as the Ag, the Al that under the emission wavelength of the light of the active layer 106 that comes free AlGaInP based material to constitute, have high reflectance, Au.Therefore, need between metallic reflection rete 111 and double-heterostructure part 120, partly dispose the junction surface 115 of ohmic contact.What is called partly disposes to be meant not to be to cover reflective metals rete 111 all sidedly, decentralized configuration aptly in its face.
In order to obtain ohmic contact, the junction surface 115 of ohmic contact is configured between reflective metals rete 111 and the double-heterostructure part 120, and to compare reflectivity low with metallic reflection rete 111.In addition, join with double-heterostructure part 120 and after the material at junction surface 115 of ohmic contact is set,, need heat-treat in order to obtain ohmic contact.When this heat treatment, alloying reaction can take place between the material at the junction surface 115 of double-heterostructure part 120 and ohmic contact, the double-heterostructure part 120 places' absorptivities that join at the junction surface 115 with ohmic contact increase.Therefore, during by oxide skin(coating) 110, compare, become big in the light absorption of 115 places, junction surface of ohmic contact with the junction surface 116 of non-ohmic contact from the light of active layer 106.Consequently, the light of light-emitting component integral body taking-up efficient can reduce.
[patent documentation 1] TOHKEMY 2004-356279 communique
[patent documentation 2] TOHKEMY 2002-217450 communique
Summary of the invention
Yet even reflective metals rete 111 has high reflectance to the light from active layer 106, if can not be from taking out the light of volume as the surface of the light removing layer 104 of first type surface, light takes out efficient also can be reduced, and the raising of luminous power output is few.Therefore, as the method for taking out light effectively, known shown in patent documentation 1 have a method that makes the first type surface matsurfaceization.So-called matsurfaceization is meant that formation is concavo-convex.
That is,, there is the restriction of critical angle in order from material, outwards to export light.If the angle of light is vertical with respect to the surface, then can takes out light, but can not take out when existing to tilt.The refractive index of light wavelength and material is depended in this critical angle.For example from the light that luminescent layer 121 penetrates, light perpendicular to the direction of light removing layer 104 outwards penetrates from semiconductor light-emitting elements 101, but has the light of certain angle owing to can outwards not penetrate from semiconductor light-emitting elements 101 with respect to the angle of first type surface with respect to light removing layer 104.But,,, thereby can outwards penetrate from semiconductor light-emitting elements 101 then owing to the angle that has the light corresponding main surfaces of certain angle with respect to light removing layer 104 changes if make the first type surface matsurfaceization.Therefore, can improve light taking-up efficient by first type surface being carried out matsurfaceization.
In order further to improve the effect of matsurfaceization, the method that forms relief pattern as the employing lithography of known technology is arranged, but this method is owing to must form fine pattern, thereby needs expensive device, and the result is that the manufacturing cost of semiconductor light-emitting elements can increase.In addition, even there is the operation of lithography, manufacturing cost also can increase.To this, the method as reducing manufacturing cost has the method that does not form pattern and carry out matsurfaceization.But there is following problem in this method.
Do not form pattern and by etching when carrying out matsurface as the surface of the light removing layer of first type surface, can carry out etching to whole face in concavo-convex forming, whole of the bed thickness of light removing layer can attenuation.If whole attenuation of bed thickness, the expansion variation of electric current then, voltage increases forward, luminous power output simultaneously also can reduce, and consequently luminous efficiency reduces.
It is because the thermal discharge in the semiconductor light-emitting elements becomes greatly because of voltage increases forward that luminous efficiency reduces, and luminous power is exported and is subjected to the influence of this heat and reduces.In a word, during the bed thickness attenuation of light removing layer, series resistance can become greatly, the expansion variation of electric current simultaneously, and voltage increases forward thus, luminous power output reduces.
Therefore, the objective of the invention is to solve above-mentioned problem, the bed thickness that the light removing layer is provided does not have attenuation and by the semiconductor light-emitting elements of matsurfaceization.
To achieve these goals, the invention provides a kind of semiconductor light-emitting elements, this light-emitting component has and comprises and be clipped in first, a plurality of semiconductor layers of the light removing layer of the first type surface of the active layer of the generation light between second covering and the formation first covering side, has first electrode that partly covers above-mentioned smooth removing layer, cover second electrode of the opposing face of above-mentioned first type surface, catoptrical reflective metals rete between second covering and second electrode, the oxide skin(coating) that joins with the active layer side of this reflective metals rete, the junction surface of the ohmic contact that in this oxide skin(coating), partly forms, above-mentioned smooth removing layer comprises a plurality of layers that proportion of composing is different, these a plurality of layers all are formed with and are used to make the concavo-convex of above-mentioned first type surface matsurfaceization, and a plurality of layers the material that forms described smooth removing layer is respectively by (Al
XGa
1-X)
YIn
1-YP represents, 0.3≤X≤1,0.4≤Y≤0.6 wherein forms the Al proportion of composing of the Al proportion of composing of the material of outermost layer in a plurality of layers of described smooth removing layer less than the material of second outside layer, and the bed thickness that forms outermost layer in a plurality of layer of described smooth removing layer is 50～1000nm.
The inclination that forms outermost layer convex-concave surface in a plurality of layer of above-mentioned smooth removing layer can be less than second outside layer.
The band-gap energy that forms outermost layer in a plurality of layer of above-mentioned smooth removing layer can be less than second outside layer.
The bed thickness sum of the above-mentioned smooth removing layer and first covering can be 800～5300nm.
The refractive index of the material of above-mentioned smooth removing layer can be greater than the material of first covering.
Between the above-mentioned smooth removing layer and first electrode, can have and cover the part identical, band-gap energy less than above-mentioned active layer and to from the opaque first electrode side contact layer of the light of active layer with first electrode.
The bed thickness of the above-mentioned first electrode side contact layer can be 5～200nm.
The Al proportion of composing that forms a plurality of layers material of above-mentioned smooth removing layer can be greater than the material of above-mentioned active layer.
A plurality of layers the material that forms above-mentioned smooth removing layer respectively can be by (Al
XGa
1-X)
YIn
1-YP represents, wherein, and 0.3≤X≤1,0.4≤Y≤0.6.And the material of above-mentioned active layer can be by (Al
XGa
1-X)
YIn
1 -YP represents, wherein 0≤X≤0.5,0.4≤Y≤0.6.
Above-mentioned active layer can have multiple quantum trap structure or the distortion multiple quantum trap structure that is made of 20～160 layers trap layer.
Between the above-mentioned active layer and second covering, can have the second covering side undoped layer.
The Al proportion of composing of the material of the above-mentioned second covering side undoped layer can be greater than the material of above-mentioned active layer.
The band-gap energy of the material of the above-mentioned second covering side undoped layer can be greater than the material of above-mentioned active layer.
The material of the above-mentioned second covering side undoped layer can be by (Al
XGa
1-X)
YIn
1-YP represents, wherein, and 0.3≤X≤1,0.4≤Y≤0.6), and the material of above-mentioned active layer can be by (Al
XGa
1-X)
YIn
1-YP represents wherein 0≤X≤0.5,0.4≤Y≤0.6.
Have the support substrate between the above-mentioned a plurality of semiconductor layer and second electrode, this supports the material of substrate can be among Si, GaAs, Ge, Cu, Mo, W, the CuW any one.
The area at the junction surface of ohmic contact can be for below 20% with respect to the ratio of the gross area of above-mentioned oxide skin(coating).
Have reflective metals rete side contact layer between the above-mentioned oxide skin(coating) and second covering, the material of this reflective metals rete side contact layer can be based on GaP.
Have interlayer between the above-mentioned reflective metals rete side contact layer and second covering, the material of this interlayer can be by Ga
XIn
1-XP represents, wherein, and 0.6≤X＜1.
3 layers that the additive that above-mentioned reflective metals rete side contact layer has material is different, the additive of the material of the layer that joins with above-mentioned interlayer in these 3 layers is Mg, the additive of material of the layer that joins with above-mentioned oxide skin(coating) is Zn, and the material in the intermediate layer of these 2 layers does not have positive additive.
Above-mentioned oxide skin(coating) the bed thickness d at the junction surface of non-ohmic contact with respect to the scope of benchmark bed thickness dst ± 30% in, described benchmark bed thickness dst is represented by following relational expression:
The constant alpha of benchmark bed thickness dst=odd number * from the light wavelength λ p/ of above-mentioned active layer (4 * at the refractive index n of the above-mentioned light at the junction surface of non-ohmic contact).
And above-mentioned oxide skin(coating) can equate with the bed thickness at the junction surface of non-ohmic contact at the bed thickness at the junction surface of ohmic contact.
Between the above-mentioned smooth removing layer and first covering, can insert and compare Al proportion of composing height and the big insert layer of band-gap energy with above-mentioned smooth removing layer.
The material of above-mentioned insert layer can be by (Al
XGa
1-X)
YIn
1-YP represents, wherein, and 0.4＜X≤1,0.4≤Y≤0.6).
The present invention can bring into play the effect of following excellence.
(1) bed thickness of light removing layer does not have attenuation.
Description of drawings
Fig. 1 is the cross section structure figure of the semiconductor light-emitting elements of expression first preferred implementation of the present invention.
Fig. 2 A and Fig. 2 B are the figure of the semiconductor light-emitting elements of expression second preferred implementation of the present invention;
Fig. 2 A is the cross section structure figure of the semiconductor light-emitting elements of expression second preferred implementation; Fig. 2 B is the cross section enlarged drawing of light removing layer.
Fig. 3 is the cross section structure figure of the semiconductor light-emitting elements of expression the 3rd preferred implementation of the present invention.
Fig. 4 is the cross section structure figure of the epitaxial wafer made in the manufacture process of semiconductor light-emitting elements.
Fig. 5 is the cross section structure figure of conventional semiconductor light-emitting component.
Symbol description
1 semiconductor light-emitting elements
2 first electrodes
3 first electrode side contact layer
4 smooth removing layers
5 first coverings
6 active layers
7 second coverings
8 interlayers
9 reflective metals rete side contact layer
10 oxide skin(coating)s
11 reflective metals retes
12 metal close binders
13 support substrate
14 second electrodes
The junction surface of 15 ohmic contact
23 first smooth removing layers
24 second smooth removing layers
Embodiment
Below describe preferred implementation of the present invention in detail based on accompanying drawing.
Fig. 1 is the cross section structure figure of the semiconductor light-emitting elements of expression first preferred implementation of the present invention.
As shown in Figure 1, the semiconductor light-emitting elements 1 that the present invention relates to comprises: first electrode 2 that partly covers the light removing layer, only be formed at first electrode 2 under and cover the part identical with first electrode 2, band-gap energy is less than active layer and to from the opaque first electrode side contact layer 3 of the light of active layer, form the first type surface of the first covering side, penetrate the light removing layer 4 that enters the light of the first covering side from active layer to the outside, first covering 5 as one of 2 coverings that clip active layer, be clipped in first, produce the active layer 6 of light between second covering, second covering 7 as another covering, be present in the interlayer 8 between second covering 7 and the reflective metals rete side contact layer, reflective metals rete side contact layer 9, oxide skin(coating) 10, reflection is from the reflection of light metallic diaphragm 11 of active layer 6 towards the second electrode side between second covering 7 and second electrode, be used to paste the support substrate 13 of double-heterostructure part, metal close binder 12, second electrode 14 of the opposing face of covering first type surface.
Light removing layer 4 is also referred to as Window layer.
Oxide skin(coating) 10 has suitable in the face that joins with reflective metals the rete 11 and junction surface 15 of the ohmic contact that forms that is dispersed in, and the part that is not the junction surface 15 of ohmic contact is called the junction surface 16 of non-ohmic contact.
The area at the junction surface of preferred ohmic contact is below 20% with respect to the ratio of the gross area of oxide skin(coating).
Above-mentioned oxide skin(coating) the bed thickness d1 at the junction surface of non-ohmic contact with respect to the scope of benchmark bed thickness dst ± 30% in, described benchmark bed thickness dst is represented by following relational expression:
dst＝α×λp/4×n)
(wherein, dst is the benchmark bed thickness; α is the constant of odd number; λ p is the light wavelength from above-mentioned active layer; N is the refractive index at the light of the above-mentioned active layer at the junction surface of non-ohmic contact), and,
Above-mentioned oxide skin(coating) is at the bed thickness d at the junction surface of ohmic contact
2With at this bed thickness d
1Equate.
Reflective metals rete side contact layer 9 has 3 layers 17,18 and 19 different to the additive of material, the additive of the material of the interlayer side contact layer 17 of joining with interlayer 8 in these 3 layers is Mg, the additive of the material of the oxide skin(coating) side contact layer 19 of joining with oxide skin(coating) 10 is Zn, and the material that is arranged at the middle contact layer 18 between interlayer side contact layer 17 and the oxide skin(coating) side contact layer 19 does not have positive additive.
Be called double-heterostructure part 20 from the first electrode side contact layer 3 to reflective metals rete side contact layer 9.In addition, also first covering 5, active layer 6, second covering 7 are collectively referred to as luminescent layer 21 sometimes.
The semiconductor light-emitting elements 1 that the present invention relates to is characterised in that light removing layer 4.That is, light removing layer 4 comprises a plurality of layers that proportion of composing is different, and these a plurality of layers all are formed for making concavo-convex 22 of first type surface S matsurfaceization.In this execution mode, light removing layer 4 comprises 2 layers, and the outermost layer is that first smooth removing layer 23, the second outside layers are the second smooth removing layer 24.
As shown in the figure, all be formed with concavo-convex 22 from first smooth removing layer 23 to the second smooth removing layers 24.And concavo-convex 22 the surface tilt of comparing the first smooth removing layer 23 with the second smooth removing layer 24 is little.
Concavo-convex 22 the surface tilt of comparing the first smooth removing layer 23 with the second smooth removing layer 24 is because the etching speed of the first smooth removing layer 23 is faster than the second smooth removing layer 24 for a short time.
Concavo-convex 22 surface be formed slopely various angle the time, light removing layer 4 can take out the light of various angle incidents.Therefore, on the first smooth removing layer 23 and the second smooth removing layer 24 inclination on concavo-convex 22 surface different, can improve light thus and take out efficient.
And then, do not show among the figure that it is little that the material of the first smooth removing layer 23 and the material of the second smooth removing layer 24 are compared the Al proportion of composing, and the band-gap energy of the first smooth removing layer 23 is less than the second smooth removing layer 24.
Among the present invention, do not form pattern and light removing layer 4 carry out matsurfaceization by etching, but this moment be the different sandwich construction of proportion of composing by the structure that makes light removing layer 4, can be poor at each layer generation etching speed.That is, the Al proportion of composing of material is greater than the etching speed of the second smooth removing layer 24 of the first smooth removing layer 23 etching speed faster than the first smooth removing layer 23.Therefore, at first the first smooth removing layer 23 is etched, and when the recess that forms at the first smooth removing layer 23 reached the second smooth removing layer 24, the second smooth removing layer 24 of exposed portions serve was etched fast, and recess deepens.On the other hand, the remaining protuberance of the first smooth removing layer 23 is still by etching lentamente, thereby the first smooth removing layer 23 does not disappear, and relatively protuberance uprises.Like this, by existing etching speed poor at each layer, in than the short period, form gradient difference (section is poor) with expectation concavo-convex 22 in, the bed thickness of light removing layer 4 integral body does not have attenuation.
The semiconductor light-emitting elements 1 that the present invention relates to is not because light removing layer 4 has attenuation, thereby can prevent the forward rising of voltage, prevent current concentration simultaneously, consequently suppressed the reduction of luminous efficiency, can realize low cost, the semiconductor light-emitting elements 1 that luminous efficiency is high at luminescent layer 21.
The semiconductor light-emitting elements that the present invention relates to 1 since the first smooth removing layer 23 compare concavo-convex 22 surface tilt with the second smooth removing layer 24 little, make concavo-convex 22 surperficial angle difference, take out efficient thereby can improve light.
About the band-gap energy of semiconductor light-emitting elements 1, the first smooth removing layer 23 that the present invention relates to less than the second smooth removing layer 24.In order to reduce band-gap energy, it is effective changing the Al composition for same material.Form by changing Al, can change the etching speed that identical etching solution causes.By changing etching speed, can make concavo-convex 22 surperficial angle difference.That is to say that for the etching that utilizes same etch liquid makes concavo-convex 22 surperficial angle difference, the band-gap energy of the first smooth removing layer 23 is less than the second smooth removing layer 24.
Other execution mode then, is described.
Fig. 2 A and Fig. 2 B are the figure of the semiconductor light-emitting elements of expression second preferred implementation of the present invention; Fig. 2 A is the cross section structure figure of the semiconductor light-emitting elements of expression second preferred implementation; Fig. 2 B is the cross section enlarged drawing of light removing layer.
Semiconductor light-emitting elements 1a shown in Fig. 2 A is except the structure difference of light removing layer 4a, identical with the semiconductor light-emitting elements 1 of Fig. 1.Be clearly shown that as Fig. 2 B light removing layer 4a comprises first smooth removing layer 25, second smooth removing layer the 26, the 3rd smooth removing layer 27.The proportion of composing of these 3 layers 25～27, concavo-convex 22 surface tilt are different separately with band-gap energy.That is, about the Al proportion of composing, the first smooth removing layer 25 and the 3rd smooth removing layer 27 equate, the second smooth removing layer 26 is big.Surface tilt about concavo-convex 22, the inclination of the second smooth removing layer 26 is greater than the inclination of the first smooth removing layer 25 and the 3rd smooth removing layer 27.About band-gap energy, the band-gap energy of the second smooth removing layer 26 is greater than the band-gap energy of the first smooth removing layer 25 and the 3rd smooth removing layer 27.
Like this, be provided with first smooth removing layer 25, second smooth removing layer the 26, the 3rd smooth removing layer 27 these three layers as light removing layer 4a, equate that with Al proportion of composing the Al proportion of composing of the second smooth removing layer 26 that is clipped in the middle is bigger than the Al proportion of composing of the first smooth removing layer 25 and the 3rd smooth removing layer 27 as the first smooth removing layer 25 of the outermost layer of light removing layer 4a when forming semiconductor light-emitting elements as the 3rd smooth removing layer 27 of the la m of light removing layer 4a.This is equivalent to insert the Al proportion of composing of material than its big layer in the light removing layer 104 of conventional semiconductor light-emitting component 101.The material of this insert layer is with (Al
XGa
1-X)
YIn
1-YP represents, wherein, and 0.4＜X≤1,0.4≤Y≤0.6).
For this semiconductor light-emitting elements 1a, the Al proportion of composing of material is greater than the etching speed of the second smooth removing layer 26 of the first smooth removing layer 25 etching speed faster than the first smooth removing layer 25.Therefore, identical with the situation of the semiconductor light-emitting elements 1 of Fig. 1, by existing etching speed poor at each layer, can in than the short period, form gradient difference with expectation concavo-convex 22 in, the bed thickness of light removing layer 4 integral body does not have attenuation.
Fig. 3 is the cross section structure figure of the semiconductor light-emitting elements of expression the 3rd preferred implementation of the present invention.Semiconductor light-emitting elements 1b shown in Figure 3 has appended the second covering side undoped layer 28 to the semiconductor light-emitting elements 1 of Fig. 1.The second covering side undoped layer 28 is formed between the active layer 6 and second covering 7.The Al proportion of composing of the material of the second covering side undoped layer 28 is greater than the material of active layer 6.And the band-gap energy of the material of the second covering side undoped layer 28 is greater than the material of active layer 6.
The material of the second covering side undoped layer 28 is by (Al
XGa
1-X)
YIn
1-YP represents, wherein, and 0.3≤X≤1,0.4≤Y≤0.6, and the material of active layer 6 is by (Al
XGa
1-X)
YIn
1-YP represents, wherein 0≤X≤0.5,0.4≤Y≤0.6.
The present invention can form concavo-convex 22 of gradient difference with expectation in than the short period.Therefore, for the semiconductor light-emitting elements 1b of Fig. 3, in the first smooth removing layer 23b and the second smooth removing layer 24b that constitute light removing layer 4, though do not illustrate, the second smooth removing layer 24b is through receiving some etchings.
Carry out following explanation at the suitable number range relevant and other preferred implementations with above first to the 3rd preferred implementation.
The bed thickness of first smooth removing layer 23 of semiconductor light-emitting elements 1 and the first smooth removing layer 25 of semiconductor light-emitting elements 1a for example is 400nm.This be because, the bed thickness of the first smooth removing layer 23,25 is crossed when thin, the first smooth removing layer 23,25 can complete obiterations in the etching.And when bed thickness was blocked up, etching period was elongated, had adopted wide variety of materials simultaneously, and the epitaxially grown time is also elongated, thereby cost can increase.In addition, bed thickness is blocked up does not have positive effect for height outputization yet.Therefore, the bed thickness of the first smooth removing layer 23,25 is preferably 50～1000nm, more preferably 100～800nm.
When making the bed thickness thickening of light removing layer 4 and light removing layer 4a, the expansion of electric current (diffusion) is good, thereby the characteristic of LED improves.But even exceedingly thicken bed thickness, the increase meeting of the effect of extend current is saturated.Therefore, bed thickness is blocked up not to have harm aspect characteristic, but cost can increase.Bed thickness is crossed when approaching, and luminous power output is low, forward the voltage height.Thereby the bed thickness of light removing layer 4,4a is preferably 500～5000nm, more preferably 1000～4000nm.
The bed thickness of the second smooth removing layer 26 of semiconductor light-emitting elements 1a is preferably 50～1000nm.Because the Al proportion of composing of material is greater than the etching speed of the second smooth removing layer 26 of the first, the 3rd smooth removing layer 25,27 etching speed faster than the first, the 3rd smooth removing layer 25,27.When between the first smooth removing layer 25 and the 3rd smooth removing layer 27, inserting the second smooth removing layer 26, has the effect that suppresses etch bias.But when the bed thickness of the second smooth removing layer 26 was too thin, the second smooth removing layer 26 disappeared at once owing to the etching meeting, thereby suppressed the deleterious of etch bias, and the inclined-plane area of the second smooth removing layer 26 narrows down simultaneously, and the light that takes out from the inclined-plane is few thus.On the other hand, when bed thickness is too thick, do not have the effect that suppresses etch bias.
The bed thickness sum of light removing layer 4,4a and first covering 5 is preferably 800～5500nm.Its reason is that first covering 5 is the charge carrier supplying layer, also for stoping the barrier layer in hole, also has the function of light removing layer (Window layer) in addition.By increasing this bed thickness sum, the characteristic of LED can improve, but cost can increase when the bed thickness sum surpasses 5500nm.In addition, owing to have the function on barrier layer, the bed thickness of first covering 5 is necessary for more than the 300nm.Because the bed thickness of light removing layer 4,4a is more than the 500nm, therefore, the bed thickness sum of light removing layer 4,4a and first covering 5 is preferably 800～5500nm.
The bed thickness of the first electrode side contact layer 3 is preferably 5～200nm.This be because, this bed thickness is crossed when thin, and is insufficient as the function of contact layer; Opposite when blocked up, electric current is difficult to flow, and D.C. resistance increases, and forward voltage increases.Therefore, preferred bed thickness is 5～200nm, more preferably 10～100nm.
The composition of the material of interlayer 8 can be Ga
XIn
1-XP, wherein 0.6≤X＜1.This is because X can absorb the light that sends less than 0.6 o'clock.
The additive that adds in the material of the oxide skin(coating) side contact layer 19 of joining with oxide skin(coating) 10 in the reflective metals rete side contact layer 9 is preferably Zn.This be since Zn than the easy interpolation of Mg, can low resistanceization.By increasing addition, can reduce contact resistance, and can reduce forward voltage.
The additive that adds in the material of the interlayer side contact layer 17 of joining with interlayer 8 in the reflective metals rete side contact layer 9 is preferably Mg.This be because, Mg is than the more difficult diffusion of Zn, thereby can suppress the reduction of the initial stage luminous power output that caused by diffusion, simultaneously owing to be difficult to diffusion, reliability (relative power output) raising.So-called reliability (relative power output) is meant the luminous power output/initial stage luminous power output after the energising.
Can make the undoped layer that does not have positive additive in the material in the interlayer side contact layer 17 of reflective metals rete side contact layer 9 and the middle middle contact layer 18 that is provided with of oxide skin(coating) side contact layer 19.This is because the layer of the layer of the Mg that mixed and the Zn that mixed can produce counterdiffusion mutually during adjacent existence.By contact layer 18 in the middle of sandwiching, can prevent the phase counterdiffusion.
When active layer 6 was the distortion multiple quantum trap structure, preferred trap layer was the Ga that do not mix
0.4In
0.6P (thickness 4nm), the barrier layer is (Al
0.5Ga
0.5)
0.5InP (thickness 10nm).
For the semiconductor light-emitting elements 1b of Fig. 3,, also can between active layer 6 and n type first covering 5, insert the first covering side undoped layer (not shown) though be between active layer 6 and p type second covering 7, to have inserted the second covering side undoped layer 28.In addition, these undoped layers also can be low carrier concentration layer.
Between reflective metals rete 11 and double-heterostructure part 20, be provided with SiO in the execution mode
2Layer (oxide skin(coating)) 10 is even but for the semiconductor light-emitting elements that does not have oxide skin(coating) 10, the present invention also has effect.
Semiconductor light-emitting elements 1,1a and 1b for example are the red LED element of emission wavelength 630nm.For used identical with AlGaInP as the material of principal component other the LED element (emission wavelength 560～660nm), about not changes such as the material of each layer, carrier concentrations, also not change of light removing layer 4,4a, 4b, the present invention also has effect.
The apparent shape of first electrode 2 can be circle, quadrangle, rhombus, polygon, other difformities.
Support the material of substrate that Si, GaAs, Ge, Cu, Mo, W, CuW etc. are arranged.
[embodiment]
Making has the LED epitaxial wafer that near structure shown in Figure 1, the emission wavelength red LED 630nm is used, and makes the LED element.The formation at the formation of the bed thickness of epitaxial growth method, each epitaxial loayer, the structure and material of each epitaxial loayer, reflective metals rete, the junction surface of ohmic contact and size, as described below to the details of making such as the method for attaching again of supporting substrate, electrode formation method, engraving method.
As shown in Figure 4, on n type GaAs substrate (growth substrate) 41, pass through MOVPE method lamination successively: n type (Se doping) (Al
0.7Ga
0.3)
0.5In
0.5P etch stop layer (bed thickness 200nm, carrier concentration 1 * 10
18/ cm
3) (etch stop layer) 42, n type (Se doping) GaAs contact layer (bed thickness 50nm, carrier concentration 1 * 10
18/ cm
3) (the first electrode side contact layer) 3, n type (Se doping) (Al
0.4Ga
0.6)
0.5In
0.5P Window layer (bed thickness 400nm, carrier concentration 1 * 10
18/ cm
3) (the first smooth removing layer) 23, n type (Se doping) (Al
0.7Ga
0.3)
0.5In
0.5P Window layer (bed thickness 2600nm, carrier concentration 1 * 10
18/ cm
3) (the second smooth removing layer) 24, n type (Se doping) (Al
0.7Ga
0.3)
0.5In
0.5P covering (bed thickness 500nm, carrier concentration 5 * 10
17/ cm
3) (first covering) 5, the multiple quantum trap active layer that do not mix (20 pairs of trap layers Ga that do not mix
0.5In
0.5P (bed thickness 4nm)/barrier layer (Al
0.5Ga
0.5)
0.5InP (bed thickness 10nm)) (active layer) 6, p type (Mg doping) (Al
0.7Ga
0.3)
0.5In
0.5P covering (bed thickness 400nm, carrier concentration 1.2 * 10
18/ cm
3) (second covering) 7, p type (Mg doping) Ga
XIn
1- XP (0.6≤X＜1) interlayer (bed thickness 10nm, carrier concentration 5 * 10
18/ cm
3) 8, p type (Mg doping) GaP layer (bed thickness 200nm, carrier concentration 1 * 10
18/ cm
3) (interlayer side contact layer) 17, the GaP layer that do not mix (bed thickness 100nm) (middle contact layer) 18, p type (Zn doping) GaP layer (bed thickness 50nm, carrier concentration 1 * 10
19/ cm
3) (oxide skin(coating) side contact layer) 19, obtain the LED epitaxial wafer.Active layer 3 forms 1 pair of GaInP layer and AlGaInP layer.
This LED is characterised in that with epitaxial wafer, be provided with the first smooth removing layer 23 and 24 two layers of the second smooth removing layer as light removing layer 4, when forming semiconductor light-emitting elements, the Al proportion of composing of the first smooth removing layer 23 of formation outermost layer is less than constituting secondly outer field second smooth removing layer 24.That is, form each freedom (Al of material of first, second light removing layer 23,24 of light removing layer 4
XGa
1-X)
YIn
1-YP (wherein 0.3≤X≤1,0.4≤Y≤0.6) expression, the X value in the material of the first smooth removing layer 23 are that the X value in the material of 0.4, the second smooth removing layer 24 is 0.7.
In addition, be that the bed thickness of 400nm, the second smooth removing layer 24 is 2600nm by the bed thickness that makes the first smooth removing layer 23, the bed thickness 3000nm of light removing layer 4 is identical with the bed thickness of the light removing layer 104 of conventional example described later.
Growth temperature is 650 ℃ in the MOVPE method, and growth pressure is 6666Pa (50Torr), and the speed of growth of each layer is 0.3～1.0nm/sec, and the V/III ratio is about 200.V/III than be molal quantity with III family raw materials such as TMGa, TMAl be denominator, with AsH
3, PH
3Molal quantity Deng V family raw material is the ratio (merchant) of molecule.
Raw material as the MOVPE method uses trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium organic metal such as (TMIn), arsine (AsH
3), phosphine (PH
3) wait hydride gas.The additive raw material of using as the conductivity type decision impurity of n type semiconductor layer uses hydrogen selenide (H
2Se), the additive raw material of using as the conductivity type decision impurity of p type semiconductor layer uses dicyclopentadienyl magnesium (Cp
2Mg), zinc methide (DMZn).
In addition, the additive raw material as the conductivity type decision impurity of n type semiconductor layer is used can also use disilane (Si
2H
6), single silane (SiH
4), tellurium diethyl (DETe), dimethyl tellurium (DMTe), the additive raw material as the conductivity type decision impurity of p type semiconductor layer is used can also use diethyl zinc (DEZn).
From the MOVPE device take out this LED with epitaxial wafer after, form the SiO of the about 100nm of bed thickness on the surface of oxide skin(coating) side contact layer 19
2Layer (oxide skin(coating)) 10, utilize lithographic printing law technology commonly used, further carry out etching, thereby the oxide that forms apparent about 12 μ m diameters with 30 μ m spacings on oxide skin(coating) 10 is removed the hole, by vacuum vapour deposition this oxide is removed the junction surface 15 that the hole forms bed thickness and oxide skin(coating) 10 ohmic contact about equally.Raw material as the junction surface 15 of ohmic contact uses golden zinc (AuZn) alloy.The junction surface 15 of ohmic contact forms apparent about 12 μ m diameters.Be referred to as the point-like electrode.Form the junction surface 15 of this ohmic contact of thickness 100nm with apparent 30 μ m spacings.That is to say, oxide is removed the junction surface 15 that the hole has formed bed thickness and oxide skin(coating) 10 ohmic contact about equally by vacuum vapour deposition.
Subsequently, in nitrogen atmosphere, under 350 ℃, this LED is heated with epitaxial wafer, carry out the alloying at the junction surface 15 of reflective metals rete side contact layer 9 and ohmic contact by 5 minutes heat treated alloy techniques.
On the oxide skin(coating) 10 of the LED at the junction surface 15 that is provided with ohmic contact (also comprising on the junction surface 15 of ohmic contact) with epitaxial wafer, distinguish evaporation 200nm aluminium (Al), 200nm titanium (Ti), 500nm gold (Au) successively as reflective metals rete 11, add up to the 900nm bed thickness.
On preparing as the Si substrate of supporting substrate 13, distinguish evaporation 100nm gold germanium (AuGe) alloy, 200nm titanium (Ti), 500nm gold (Au) successively as metal close binder 12, add up to the 800nm bed thickness.
Fit together with epitaxial wafer and the support substrate 13 that is provided with metal close binder 12 according to the LED that reflective metals rete 11 and metal close binder 12 is harmonious to be provided with reflective metals rete 11 like that.Fit by in pressure 1.3Pa (0.01Torr) atmosphere gas load 3MPa (30kgf/cm
2) the state of load under, 350 ℃ of temperature with LED with epitaxial wafer with support substrate 13 to keep carrying out in 30 minutes.
Be impregnated in ammoniacal liquor and the dioxygen water system mixed liquor with epitaxial wafer fitting to the LED that supports on the substrate 13, thereby remove growth with substrate 41, expose etch stop layer 42 by etching.Then, using hydrochloric acid is that etching solution is removed etch stop layer 42, exposes the first electrode side contact layer 3.
Surface in this first electrode side contact layer 3, utilize lithographic printing law technology commonly used to form pattern, form circular portion and first electrode 2 of the distribution electrode that distributes with dendritic stretching, extensions radial, width 10 μ m from this circular portion with apparent diameter 100 μ m by vacuum vapour deposition.First electrode 2 is distinguished evaporation 100nm gold germanium (AuGe) alloy, 100nm nickel (Ni), 500nm gold (Au) successively, adds up to the 700nm bed thickness.
With this first electrode 2 as mask, the etching solution that uses the mixed liquor by sulfuric acid, hydrogen peroxide and water to constitute, by selective etch remove first electrode 2 under beyond the first electrode side contact layer 3, expose the first smooth removing layer 23 of light removing layer 4.
By hydrochloric acid is that etching carry out roughization to the surface of this light removing layer 4.Find the etching condition that the part of the second smooth removing layer 24 is exposed in the present embodiment, by prolonging etching period with respect to this etching condition, all form concavo-convexly 22 as shown in Figure 1 from first smooth removing layer 23 to second smooth removing layer 24 each layers, obtain the first smooth removing layer 23 and compare concavo-convex 22 the little matsurface of surface tilt with the second smooth removing layer 24.
Then, form second electrode 14 at the whole lateral surface of supporting substrate 13 by vacuum vapour deposition.Particularly, AM aluminum metallization (Al), titanium (Ti), gold (Au) successively, subsequently in nitrogen atmosphere 400 ℃ of heating, by 5 minutes heat treated alloy techniques with second electrode, 14 alloyings.
Use cutter sweep as the center LED that this has formed electrode to be cut with epitaxial wafer, make the square LED bare chip of chip size 300 μ m with the circular portion of first electrode 2.(chips welding) this LED bare chip is installed, to the LED bare chip of this installations bonding that goes between, making LED element on the TO-18 mandrel.
Estimate the initial stage characteristic of the LED element of this embodiment #1.About the initial stage characteristic, the luminous power of (during evaluation) is output as 6.64mW during the 20mA energising, and forward voltage is 1.98V.
By preventing the bed thickness attenuation of light removing layer 4, can suppress the forward rising of voltage like this, realize that forward voltage reaches 1.98V.In addition, by suppressing the forward rising of voltage, can suppress the heat release of LED, the result is that luminous power output improves.And then, because the bed thickness of light removing layer 4 does not have attenuation, thereby can obtain the expansion of electric current, make the electric current homogenization that flows in active layer 6.Also can suppress the heat release of LED thus.Moreover because the electric current dispersing characteristic is good, therefore can suppress first electrode 15 becomes the reduction of the caused light taking-up of shadow efficient, can also improve luminous power output thus.In addition, owing to can suppress current concentration, can think the disappearance of overflowing of charge carrier, internal quantum also improves.These make luminous power output improve by a plurality of factor stacks that embodiment # 1 improves.
Making has the LED epitaxial wafer that near structure shown in Figure 2, the emission wavelength red LED 630nm is used, and makes the LED element.The formation at the formation of the bed thickness of epitaxial growth method, each epitaxial loayer, the structure and material of each epitaxial loayer, reflective metals rete, the junction surface of ohmic contact and size, identical with embodiment # 1 basically to the details of making such as the method for attaching again of supporting substrate, electrode formation method, engraving method.Below only describe the place different in detail with embodiment # 1.
Light removing layer 4a comprises first smooth removing layer 25, second smooth removing layer the 26, the 3rd smooth removing layer 27.The first smooth removing layer 25 forms n type (Se doping) (Al
0.4Ga
0.6)
0.5In
0.5P Window layer (bed thickness 400nm, carrier concentration 1 * 10
18/ cm
3), the second smooth removing layer 26 forms n type (Se doping) (Al
0.7Ga
0.3)
0.5In
0.5P Window layer (bed thickness 100nm, carrier concentration 1 * 10
18/ cm
3), the 3rd smooth removing layer 27 forms n type (Se doping) (Al
0.4Ga
0.6)
0.5In
0.5P Window layer (bed thickness 2500nm, carrier concentration 1 * 10
18/ cm
3).
That is to say, in embodiment # 2, be provided with 27 3 layers of first smooth removing layer 25, second smooth removing layer the 26, the 3rd smooth removing layer as light removing layer 4a, the Al proportion of composing that constitutes the first smooth removing layer 25 of outermost layer when forming semiconductor light-emitting elements and constitute the 3rd smooth removing layer 27 of la m equates that the Al proportion of composing of the second smooth removing layer 26 that is clipped in the middle is bigger than the Al proportion of composing of the first smooth removing layer 25 and the 3rd smooth removing layer 27.That is, the material of first, second, third smooth removing layer 25,26,27 of formation light removing layer 4 is respectively by (Al
XGa
1-X)
YIn
1-YP (wherein 0.3≤X≤1,0.4≤Y≤0.6) expression, the X value in the material of the first, the 3rd smooth removing layer 25,27 are that the X value in the material of 0.4, the second smooth removing layer 26 is 0.7.
In addition, the second smooth removing layer 26 is 400nm apart from the distance on the surface (with the first electrode side contact layer 3) of light removing layer 4a.
When comparing, be equivalent in light removing layer 104, insert the Al proportion of composing of material than its big layer with conventional example described later.
Estimate the initial stage characteristic of the LED element of this embodiment #2.About the initial stage characteristic, the luminous power of (during evaluation) is output as 6.72mW during the 20mA energising, and forward voltage is 1.99V.
Conventional example
Making has 2 kinds of wafers that LED that near structure shown in Figure 5, the emission wavelength red LED 630nm uses does not have matsurfaceization with epitaxial wafer and carried out matsurfaceization, and makes the LED element.The formation at the formation of the bed thickness of epitaxial growth method, each epitaxial loayer, the structure and material of each epitaxial loayer, reflective metals rete, the junction surface of ohmic contact and size, identical with embodiment # 1 basically to the details of making such as the method for attaching again of supporting substrate, electrode formation method, engraving method.Below only describe the place different in detail with embodiment # 1.
Light removing layer 104 only is 1 layer of n type (Se doping) (Al
0.4Ga
0.6)
0.5In
0.5P Window layer (bed thickness 3000nm, carrier concentration 1 * 10
18/ cm
3).
About the initial stage characteristic of the LED element of the conventional example of having carried out matsurfaceization, the luminous power of (during evaluation) is output as 5.0mW during the 20mA energising, and forward voltage is 2.3V.About the initial stage characteristic of the LED element of the conventional example of not carrying out matsurfaceization, the luminous power of (during evaluation) is output as 4.3mW during the 20mA energising, and forward voltage is 1.96V.
As mentioned above, during with each LED element of initial stage characteristic comparing embodiment # 1,2, conventional example, can confirm by being suitable for raising and the forward reduction of voltage that the present invention has realized luminous power output.
Claims (22)
1. semiconductor light-emitting elements, it is characterized in that, have and comprise and be clipped in first, a plurality of semiconductor layers of the light removing layer of the first type surface of the active layer of the generation light between second covering and the formation first covering side, has first electrode that partly covers described smooth removing layer, cover second electrode of the opposing face of described first type surface, catoptrical reflective metals rete between second covering and second electrode, the oxide skin(coating) that joins with the active layer side of this reflective metals rete, the junction surface of the ohmic contact that in this oxide skin(coating), partly forms, wherein, described smooth removing layer comprises a plurality of layers that proportion of composing is different, these a plurality of layers all are formed with and are used to make described first type surface to become the concavo-convex of matsurface, and a plurality of layers the material that forms described smooth removing layer is respectively by (Al
XGa
1-X)
YIn
1-YP represents, 0.3≤X≤1,0.4≤Y≤0.6 wherein forms the Al proportion of composing of the Al proportion of composing of the material of outermost layer in a plurality of layers of described smooth removing layer less than the material of second outside layer, and the bed thickness that forms outermost layer in a plurality of layer of described smooth removing layer is 50～1000nm.
2. semiconductor light-emitting elements according to claim 1 is characterized in that, forms the inclination of the inclination of the convex-concave surface of outermost layer in a plurality of layer of described smooth removing layer less than the convex-concave surface of second outside layer.
3. semiconductor light-emitting elements according to claim 1 is characterized in that, forms the band-gap energy of the band-gap energy of outermost layer in a plurality of layer of described smooth removing layer less than second outside layer.
4. semiconductor light-emitting elements according to claim 1 is characterized in that, the bed thickness sum of the described smooth removing layer and first covering is 800～5300nm.
5. semiconductor light-emitting elements according to claim 1 is characterized in that the refractive index of the material of described smooth removing layer is greater than the refractive index of the material of first covering.
6. semiconductor light-emitting elements according to claim 1, it is characterized in that, have between the described smooth removing layer and first electrode and cover the part identical with first electrode, band-gap energy is less than described active layer, and to from the opaque first electrode side contact layer of the light of active layer.
7. semiconductor light-emitting elements according to claim 6 is characterized in that, the bed thickness of the described first electrode side contact layer is 5～200nm.
8. semiconductor light-emitting elements according to claim 1 is characterized in that, the Al proportion of composing of a plurality of layers material that forms described smooth removing layer is greater than the Al proportion of composing of the material of described active layer.
9. semiconductor light-emitting elements according to claim 1 is characterized in that the material of described active layer is by (Al
XGa
1-X)
YIn
1-YP represents, wherein 0≤X≤0.5,0.4≤Y≤0.6.
10. semiconductor light-emitting elements according to claim 1 is characterized in that, described active layer has multiple quantum trap structure or the distortion multiple quantum trap structure that is made of 20～160 layers trap layer.
11. semiconductor light-emitting elements according to claim 1 is characterized in that, has the second covering side undoped layer between the described active layer and second covering.
12. semiconductor light-emitting elements according to claim 11 is characterized in that, the Al proportion of composing of the material of the described second covering side undoped layer is greater than the Al proportion of composing of the material of described active layer.
13., it is characterized in that the band-gap energy of the material of the described second covering side undoped layer is greater than the band-gap energy of the material of described active layer according to claim 11 or 12 described semiconductor light-emitting elements.
14. semiconductor light-emitting elements according to claim 11 is characterized in that, the material of the described second covering side undoped layer is by (Al
XGa
1-X)
YIn
1-YP represents that the material of wherein 0.3≤X≤1,0.4≤Y≤0.6, and described active layer is by (Al
XGa
1-X)
YIn
1-YP represents, wherein 0≤X≤0.5,0.4≤Y≤0.6.
15. semiconductor light-emitting elements according to claim 1 is characterized in that, has the support substrate between the described a plurality of semiconductor layers and second electrode, the material of this support substrate is any one among Si, GaAs, Ge, Cu, Mo, W, the CuW.
16. semiconductor light-emitting elements according to claim 1 is characterized in that, the area at the junction surface of ohmic contact is below 20% with respect to the ratio of the gross area of described oxide skin(coating).
17. semiconductor light-emitting elements according to claim 1 is characterized in that, has reflective metals rete side contact layer between the described oxide skin(coating) and second covering, the material of this reflective metals rete side contact layer is based on GaP.
18. semiconductor light-emitting elements according to claim 17 is characterized in that, has interlayer between the described reflective metals rete side contact layer and second covering, the material of this interlayer is by Ga
XIn
1-XP represents, wherein 0.6≤X＜1.
19. according to claim 17 or 18 described semiconductor light-emitting elements, it is characterized in that, 3 layers that the additive that described reflective metals rete side contact layer has material is different, the additive of the material of the layer that joins with described interlayer in these 3 layers is Mg, the additive of material of the layer that joins with described oxide skin(coating) is Zn, and the material in the intermediate layer of these 2 layers does not have positive additive.
20. semiconductor light-emitting elements according to claim 1 is characterized in that, described oxide skin(coating) the bed thickness d at the junction surface of non-ohmic contact with respect to the scope of benchmark bed thickness dst ± 30% in, described benchmark bed thickness dst is represented by following relational expression:
The constant alpha of benchmark bed thickness dst=odd number * from the light wavelength λ p of described active layer
/ (4 * at the refractive index n of the described light at the junction surface of non-ohmic contact),
And described oxide skin(coating) equates with bed thickness at the junction surface of non-ohmic contact at the bed thickness at the junction surface of ohmic contact.
21. semiconductor light-emitting elements according to claim 1 is characterized in that, Al proportion of composing height and the big insert layer of band-gap energy are compared in insertion with described smooth removing layer between the described smooth removing layer and first covering.
22. semiconductor light-emitting elements according to claim 21 is characterized in that, the material of described insert layer is by (Al
XGa
1-X)
YIn
1-YP represents, wherein 0.4＜X≤1,0.4≤Y≤0.6.
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| JP2006286485 | 2006-10-20 | ||
| JP2006286485A JP4835377B2 (en) | 2006-10-20 | 2006-10-20 | Semiconductor light emitting device |
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| JP5346443B2 (en) | 2007-04-16 | 2013-11-20 | ローム株式会社 | Semiconductor light emitting device and manufacturing method thereof |
| JP5493252B2 (en) * | 2007-06-28 | 2014-05-14 | 日亜化学工業株式会社 | Semiconductor light emitting device |
| JP5245529B2 (en) * | 2008-05-15 | 2013-07-24 | 日立電線株式会社 | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
| JP5024247B2 (en) * | 2008-09-12 | 2012-09-12 | 日立電線株式会社 | Light emitting element |
| JP5282503B2 (en) * | 2008-09-19 | 2013-09-04 | 日亜化学工業株式会社 | Semiconductor light emitting device |
| KR101064006B1 (en) * | 2009-03-03 | 2011-09-08 | 엘지이노텍 주식회사 | Light emitting element |
| KR100999713B1 (en) | 2009-03-17 | 2010-12-08 | 엘지이노텍 주식회사 | Light emitting device and method for fabricating the same |
| JP2011009524A (en) * | 2009-06-26 | 2011-01-13 | Hitachi Cable Ltd | Light-emitting element, and method of making the light-emitting element |
| JP2011035017A (en) * | 2009-07-30 | 2011-02-17 | Hitachi Cable Ltd | Light-emitting device |
| JP5518078B2 (en) * | 2009-08-31 | 2014-06-11 | 京セラ株式会社 | Light emitting element |
| KR101081166B1 (en) | 2009-09-23 | 2011-11-07 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the same and light emitting device package |
| KR101103892B1 (en) | 2009-12-08 | 2012-01-12 | 엘지이노텍 주식회사 | Light emitting device and light emitting device package |
| JP5733594B2 (en) | 2010-02-18 | 2015-06-10 | スタンレー電気株式会社 | Semiconductor light emitting device |
| JP5801542B2 (en) * | 2010-07-13 | 2015-10-28 | 昭和電工株式会社 | Light emitting diode and light emitting diode lamp |
| JP5687858B2 (en) | 2010-07-30 | 2015-03-25 | スタンレー電気株式会社 | Semiconductor light emitting device |
| JP5593163B2 (en) * | 2010-08-18 | 2014-09-17 | 昭和電工株式会社 | Light emitting diode and light emitting diode lamp |
| JP5087672B2 (en) | 2010-12-13 | 2012-12-05 | 株式会社東芝 | Semiconductor light emitting device |
| KR101827975B1 (en) | 2011-10-10 | 2018-03-29 | 엘지이노텍 주식회사 | Light emitting device |
| TWI458122B (en) | 2011-11-23 | 2014-10-21 | Toshiba Kk | Semiconductor light emitting device |
| JP5584331B2 (en) * | 2013-06-10 | 2014-09-03 | ローム株式会社 | Semiconductor light emitting device |
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|---|---|
| JP2008103627A (en) | 2008-05-01 |
| CN101165931A (en) | 2008-04-23 |
| JP4835377B2 (en) | 2011-12-14 |
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