CN100527330C - Flat panel display with three grid emitter cathode control circuit and its producing process - Google Patents
Flat panel display with three grid emitter cathode control circuit and its producing process Download PDFInfo
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- CN100527330C CN100527330C CNB2005100484138A CN200510048413A CN100527330C CN 100527330 C CN100527330 C CN 100527330C CN B2005100484138 A CNB2005100484138 A CN B2005100484138A CN 200510048413 A CN200510048413 A CN 200510048413A CN 100527330 C CN100527330 C CN 100527330C
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Abstract
This invention relates to a panel display with a three-grating emitter cathode control circuit and its manufacturing technology including a closed vacuum cavity composed of a cathode panel an anode panel and a glass frame around it, among which, a photoetched SnIn oxide film layer and a fluorescent powder layer on it are set on the anode panel, a carbon nm tube cathode and a three-grating emitter cathode control circuit structure prepared for adjusting carbon nm tube field emission electrons for the cathode corresponding to every pixel point to make it uniform, reliable and high efficient are set on the cathode panel.
Description
Technical field
The invention belongs to the mutual crossing domain of plane Display Technique, microelectric technique, nanoscale science and technology and vacuum science technology, relate to the element manufacturing of dull and stereotyped field-emission plane display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, specially refer to and have the manufacture craft that the flat field three grid emitter cathode control circuit structure, carbon nanotube cathod causes plane of departure display device.
Background technology
The application of flat-panel screens has more and more widely involved in a plurality of fields such as mobile phone, video camera, the high-end computer of notebook and automotive meter instruments and meters plate, and application televisionwise also can obtain deep and reinforcement progressively.Yet flat-panel screens equipment still is in the budding stage at initial stage at home, has sizable development space future, merits attention.The carbon nano-tube flat-panel monitor is a kind of emerging field emission types of display, has advantages such as high brightness, complanation, high definition.Wherein, whether successful image quality be to estimate display device to make one of key technical index.Realize a large amount of electronics of emission that carbon nanotube cathod can be even, stable, this is the precondition that shows good image.At present, the prevailing method of making carbon nanotube cathode material adopts grafting exactly, promptly by silk-screen printing technique carbon nanotube cathod is produced on the large tracts of land substrate, is used as the negative electrode of flat-panel display device.Because carbon nano-tube presents a kind of Powdered, carbon nano-tube is being made in the process of cathode material so, be subjected to the influence of various factorss such as concrete manufacture craft, making slurry, tools, the ability of its field emitted electron has descended many, but this be again its process of essential experience.So how take effective measures, can be large-area carbon nanotube cathod realize even, stable, reliable, high-quality emitting electrons, be the researcher a realistic problem must being pondered deeply.
For the carbon nano-tube that is printed on the negative electrode panel, the ability of its field emitted electron will be subjected to influence of various factors, for example: the influence of carbon nanotube cathod resistance conductive layer resistance, the influence of carbon nanotube cathode material state, the variation of same carbon nanotube cathod emissivities under different external conditions, the influence of the adhesive force size of carbon nanotube cathod and negative electrode panel, or the like.Along with the increase of device display area, the quantity that not only is positioned at carbon nano-tube on the different buss is rolling up, and the quantity that is positioned at carbon nanotube cathod on the same conductive layer accordingly is also in continuous increase.For the close carbon nanotube cathod of distance, owing to be subjected to the influence of extraneous factor, its field emission ability is difference to some extent, thereby causes the luminous degree of its corresponding fluorescent material also may distinguish to some extent.In this case, need carry out extra circuit and carry out the electricity adjusting, expectation allows the more weak carbon nanotube cathod of luminosity apply higher a little voltage, launch more electronics, improve the luminosity of this pixel, and allow the voltage on the more intense carbon nanotube cathod of luminosity reduce a little, reduce the brightness of this pixel.And also do not obtain more perfect solution for problem like that.
In addition, under the prerequisite of the field emission ability that does not influence carbon nanotube cathod as far as possible, also need further to reduce the cost of manufacture of flat device; When can carrying out large-area element manufacturing, it is complicated to need also to make that device fabrication processes avoids, and helps carrying out business-like large-scale production.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art and a kind of flat-panel monitor that has three grid emitter cathode control circuit and manufacture craft thereof that manufacturing process is with low cost, rate of finished products is high, simple in structure, reliable and stable that has the three grid emitter cathode control circuit structure is provided.
The object of the present invention is achieved like this: comprise by negative electrode panel, anode plate and glass encloses phosphor powder layer on tin indium oxide thin layer of tin indium oxide thin layer that photoetching is arranged on sealed vacuum chamber that frame constitutes, the anode plate and preparation, preparation has carbon nanotube cathod on the negative electrode panel all around.For the down corresponding carbon nanotube cathod preparation of each pixel is useful on the feasible whole carbon nanotube cathod of adjusting the carbon nanotube field emission electronics can be even, reliable and stable, the three grid emitter cathode control circuit structure of high efficiency emitting electrons.
The fixed position of the three grid emitter cathode control circuit structure among the present invention is for being fixed on the negative electrode panel; The backing material of the three grid emitter cathode control circuit structure among the present invention be large-scale, have quite good thermal endurance and operability, a High Performance Insulation material with low cost; The backing material of the three grid emitter cathode control circuit structure among the present invention is a glass, as soda-lime glass, and Pyrex; Bottom metal layers of backing material in the three grid emitter cathode control circuit structure among the present invention existence on glass; Bottom metal layers in the three grid emitter cathode control circuit structure among the present invention can be gold, silver, nickel, chromium metal; In the three grid emitter cathode control circuit structure among the present invention on bottom metal layers preparation one deck doped silicon layer; Doped silicon layer in the three grid emitter cathode control circuit structure among the present invention can be the p type, also can be the n type; Doped silicon layer in the three grid emitter cathode control circuit structure among the present invention can be one deck, also can be multilayer; Need be on doped silicon layer in the three grid emitter cathode control circuit structure among the present invention preparation layer of silicon dioxide dielectric isolation layer; The making of the silicon dioxide insulator separator of the three grid emitter cathode control circuit structure among the present invention and photoetching can adopt conventional photoetching process to finish; Need be on the silicon dioxide insulator separator in the three grid emitter cathode control circuit structure among the present invention electrode metal layer of making, serve as source electrode, drain electrode, control grid, lateral resistance control electrode and longitudinal electrical resistance control electrode respectively; Electrode metal layer in the three grid emitter cathode control circuit structure among the present invention can adopt sputter or evaporation process to finish; Source electrode in the three grid emitter cathode control circuit structure among the present invention, drain electrode, control grid, lateral resistance control electrode and longitudinal electrical resistance control grid can be made of metal gold, silver, nickel, chromium, aluminium; Need be in the three grid emitter cathode control circuit structure among the present invention at source electrode, control grid, lateral resistance control electrode and covering last layer silicon dioxide layer of protection above the longitudinal electrical resistance control electrode; In the three grid emitter cathode control circuit structure among the present invention carbon nanotube cathod is prepared in drain electrode.
Comprise backing material, chromium bottom metal layers, p type doped silicon layer, silicon dioxide separator, drain electrode, control grid, lateral resistance control electrode, longitudinal electrical resistance control electrode, source electrode, silicon dioxide layer of protection in the three grid emitter cathode control circuit structure among the present invention, and adopt following technology to make:
1) making of backing material glass: the bulk substrate material glass is carried out scribing;
2) making of chromium bottom metal layers: in backing material one deck chromium bottom metal layers of preparing on glass;
3) making of p type doped silicon layer: on silicon dioxide layer, prepare one deck p type doped silicon layer;
4) photoetching of p type doped silicon layer: p type doped silicon layer is carried out photoetching; Conducting channel just is formed in the p type doped silicon layer;
5) making of silicon dioxide separator: on p type doped silicon layer, prepare the silicon dioxide separator; This silicon dioxide separator serves as the dielectric isolation layer between p type doped silicon layer and the electrode;
6) photoetching of silicon dioxide separator: the silicon dioxide separator is carried out photoetching; Requirement with the drain electrode the position below the silicon dioxide separator etch away fully, expose the doped p type silicon layer; Requirement etches away the silicon dioxide separator below the position of source electrode fully, exposes p type doped silicon layer; Require the silicon dioxide separator at the position of control grid not to be etched; Requirement is with the silicon dioxide separator partial etching at the position of lateral resistance control electrode and longitudinal electrical resistance control electrode, and its thickness is 1/2nd of control grid position silicon dioxide separation layer thickness;
7) evaporation of chromium electrode metal level: at p type doped silicon layer and evaporation last layer chromium electrode metal level above the silicon dioxide layer;
8) photoetching of chromium electrode metal level: the chromium electrode metal level to evaporation carries out photoetching; Require the chromium electrode metal level to cover the p type doped silicon layer at source electrode position, form source electrode; Require the chromium electrode metal level to cover the p type doped silicon layer at drain electrode position, form drain electrode; Require the chromium electrode metal level to cover the silicon dioxide separator at control grid position, form the control gate electrode; Require the chromium electrode metal level to cover the silicon dioxide separator at lateral resistance control electrode position, form lateral resistance control electrode electrode; Require the chromium electrode metal level to cover the silicon dioxide separator at longitudinal electrical resistance control electrode position, form longitudinal electrical resistance control electrode electrode; Require each electrode of drain electrode, control grid, lateral resistance control electrode, longitudinal electrical resistance control electrode and source electrode not link to each other mutually;
9) making of silicon dioxide layer of protection: on the three grid emitter cathode control circuit structure, prepare silicon dioxide layer; Requirement all covers all drain electrodes, control grid, lateral resistance control electrode, longitudinal electrical resistance control electrode, source electrode and silicon dioxide separator get up;
10) photoetching of silicon dioxide layer of protection: silicon dioxide layer of protection is carried out photoetching; Require only to expose chromium metal-drain part, remainder serves as the silicon dioxide layer of protection in the three grid emitter cathode control circuit structure;
11) clean of glass surface: whole glass surface is carried out clean, remove dust and impurity.
The carbon nanotube cathod flat-panel monitor that has the three grid emitter cathode control circuit structure among the present invention mainly is made of anode plate structure, cathode plane plate structure, control gate electrode structure and attached getter element thereof.
The manufacture craft of the carbon nanotube cathod flat-panel monitor that has the three grid emitter cathode control circuit structure among the present invention is as follows:
1, the making of minus plate:
1) printing of carbon nanotube cathod: in conjunction with silk-screen printing technique, carbon nano-tube is printed on the chromium metal-drain in the three grid emitter cathode control circuit structure of backing material glass, is formed for the carbon nanotube cathod of emitting electrons;
2) reprocessing of carbon nanotube cathod: the carbon nanotube cathod after the printing is carried out reprocessing, to improve the field emission characteristics of carbon nano-tube.
2, the making of anode plate:
1) cleaning anode flat plate glass is removed surface impurity;
2) at anode flat plate evaporation one deck on glass tin indium oxide film;
3) tin indium oxide film is carried out photoetching, form the anode conducting bar;
4) in conjunction with silk-screen printing technique, the non-display area printing insulation paste layer at bus is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
5) in conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer [15] on bus; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
3, device assembling: negative electrode panel, anode plate, control grid and glass are enclosed frame be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip.
4, finished product is made: the device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
Three grid emitter cathode control circuit structure among the present invention has many superior parts.One, in the three grid emitter cathode control circuit structure in the present invention, will control that grid is integrated to be fabricated in the middle of the cathode control circuit, greatly reduce device technology, simplify the flow process of element manufacturing, helped extensiveization and the high integration of element manufacturing; They are two years old, in the three grid emitter cathode control circuit structure in the present invention, the size of voltage is not only being controlled the size of carbon nanotube cathod surface field intensity on the control gate electrode structure, but also participated in the middle of the current adjustment mechanism of carbon nanotube cathod, made full use of the effect of control gate pole tension, strengthened control action the carbon nanotube cathod electric current; Its three, in the three grid emitter cathode control circuit structure in the present invention, prepared lateral resistance control electrode and longitudinal electrical resistance control electrode respectively, further strengthen regulating action to carbon nanotube cathod.In the middle of the p type doped silicon layer below lateral resistance control electrode and longitudinal electrical resistance control electrode position, can form inversion layer, in the middle of inversion layer, exist electron channel, just the passage of carbon nanotube cathod electric current.Because inversion layer is a multidimensional structure, in cathode control circuit in the past, only can control the vertically inversion layer of (promptly along channel direction), inversion layer for horizontal (promptly perpendicular to channel direction) is then uncontrollable, and the cathode current in horizontal inversion layer is also bigger, be provided with the lateral resistance control electrode in the three grid emitter cathode control circuit structure in the present invention, exactly in order to address this problem.
Three grid emitter cathode control circuit structure among the present invention can be regulated the emission current of carbon nanotube cathod.When after applying voltage respectively on control grid, lateral resistance control electrode and the longitudinal electrical resistance control electrode, the silicon dioxide layer below utilizing will form conducting channel like this as dielectric isolation layer in p type doped silicon layer; When applying voltage, will form electric current in the raceway groove, like this at the raceway groove two ends, applied voltage is applied on the chromium metal source, by conducting channel, just be applied on the chromium metal-drain, its voltage also will be applied to preparation on the carbon nanotube cathod on the chromium metal-drain certainly.Utilize this mode, not only can regulate current of cathode by the voltage swing on the chromium metal source, the size that simultaneously also can regulate voltage on lateral resistance control electrode and the longitudinal electrical resistance control electrode, remote-effects are to the shape of the conducting channel between drain electrode and the source electrode, thereby also can regulate the current of cathode size, feasible control ability for the carbon nanotube cathod electric current is further strengthened.Excessive when the electric current on a certain pixel, when pixel brightness is too high, by the three grid emitter cathode control circuit structure, can reduce the lateral resistance control electrode, longitudinal electrical resistance control electrode of this point and the voltage on the control grid, weaken the voltage that is applied on the carbon nanotube cathod, reached the effect that reduces the carbon nanotube cathod emission current; Since electrons emitted reduces on the carbon nanotube cathod, the brightness of corresponding pixel also will reduce; Too small when the electric current of a certain pixel, when pixel brightness is low excessively, similar with the previous case, by the three grid emitter cathode control circuit structure, can increase the voltage on control grid, lateral resistance control electrode and the longitudinal electrical resistance control electrode, the voltage that is applied to so on the carbon nanotube cathod can increase to some extent, thereby can improve the quantity of carbon nano-tube emitting electrons, the brightness of corresponding pixel also will strengthen.Utilize this three grid emitter cathode control circuit structure, can be very flexibly, the very high efficiency voltage that comes on each carbon nano-tube emitting cathode of balance, thereby also just regulated the field emission ability of the carbon nanotube cathod under the different pixels point, reach a large amount of electronics of emission of realizing that whole carbon nanotube cathod can be even, stable, thereby realized the uniformity and the stability of display image.
In the three grid emitter cathode control circuit structure in the present invention, at first in backing material one deck chromium bottom metal layers that prepared on glass, and then begin to make control structure, this can further strengthen the stability of control structure, avoids the impurity in the backing material glass that control structure is produced adverse influence; In the present invention,, played the effect of effective protection cathodic control structure, improved the power that is made into of integral device at source electrode, control grid, lateral resistance control electrode and all covered the layer of silicon dioxide layer above the longitudinal electrical resistance control electrode.
The main purpose of the three grid emitter cathode control circuit structure among the present invention is: the carbon nanotube cathod corresponding down for each pixel all prepared a cathodic control structure, be used to adjust the ability of carbon nanotube field emission electronics, thereby reach make whole carbon nanotube cathod can be evenly, the effect of stable, reliable, high-quality emitting electrons, in the hope of further improving the image displaying quality of integral display spare.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of three grid emitter cathode control circuit structure.
Fig. 2 has provided the transversary schematic diagram of three grid emitter cathode control circuit structure.
Provided among Fig. 3 one have the three grid emitter cathode control circuit structure the structural representation of embodiment of carbon nanotube cathod field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
The present invention includes by negative electrode panel 1, anode plate 12 and all around glass enclose the sealed vacuum chamber that frame 16 is constituted, tin indium oxide thin layer 13 and the phosphor powder layer 15 of preparation on tin indium oxide thin layer that photoetching is arranged on the anode plate 12, the carbon nanotube cathod 11 of preparation on negative electrode panel 1 is characterized in that: the feasible whole carbon nanotube cathod that is useful on adjustment carbon nanotube field emission electronics for the corresponding down carbon nanotube cathod preparation of each pixel can be even, reliable and stable, the three grid emitter cathode control circuit structure of high efficiency emitting electrons.
Described three grid emitter cathode control circuit structure comprises negative electrode panel 1 (being backing material), chromium bottom metal layers 2, p type doped silicon layer 3, silicon dioxide separator 4, drain electrode 5, control grid 6, lateral resistance control electrode 7, longitudinal electrical resistance control electrode 8, source electrode 9, silicon dioxide layer of protection 10 parts from top to bottom successively.
The fixed position of described three grid emitter cathode control circuit structure is for being fixed on the negative electrode panel.The negative electrode panel of described three grid emitter cathode control circuit structure is a glass, as soda-lime glass, and Pyrex; With this glass is backing material, and on glass at this backing material is to have a bottom metal layers on the negative electrode panel; Bottom metal layers can be gold, silver, nickel, chromium metal; Preparation one deck doped silicon layer on bottom metal layers; Doped silicon layer can be the p type, also can be the n type; Doped silicon layer can be one deck, also can be multilayer; Preparation layer of silicon dioxide dielectric isolation layer on doped silicon layer.Described three grid emitter cathode control circuit structure is electrode metal layer of making on the silicon dioxide insulator separator, serves as source electrode, drain electrode, control grid, lateral resistance control electrode and longitudinal electrical resistance control electrode respectively; Source electrode, drain electrode, control grid, lateral resistance control electrode and longitudinal electrical resistance control grid can be made of metal gold, silver, nickel, chromium, aluminium; Need be at source electrode, control grid, lateral resistance control electrode and covering last layer silicon dioxide layer of protection above the longitudinal electrical resistance control electrode; Carbon nanotube cathod is prepared in drain electrode.
The three grid emitter cathode control circuit structure adopts following technology to make:
1) making of negative electrode panel 1: the bulk substrate material glass is carried out scribing;
2) making of chromium bottom metal layers 2: on negative electrode panel 1, prepare one deck chromium bottom metal layers 2;
3) making of p type doped silicon layer 3: on silicon dioxide layer, prepare one deck p type doped silicon layer 3;
4) photoetching of p type doped silicon layer 3: p type doped silicon layer is carried out photoetching; Conducting channel just is formed in the p type doped silicon layer;
5) making of silicon dioxide separator 4: on p type doped silicon layer, prepare silicon dioxide separator 4; This silicon dioxide separator serves as the dielectric isolation layer between p type doped silicon layer 3 and the electrode (comprising control grid 6, lateral resistance control electrode 7, longitudinal electrical resistance control electrode 8);
6) photoetching of silicon dioxide separator 4: silicon dioxide separator 4 is carried out photoetching; The silicon dioxide separator 4 that requirement will drain below 5 the position etches away fully, exposes doped p type silicon layer 3; Requirement etches away the silicon dioxide separator 4 below the position of source electrode 9 fully, exposes p type doped silicon layer 3; Require the silicon dioxide separator 4 at the position of control grid 6 not to be etched; Requirement is with silicon dioxide separator 4 partial etchings at the position of lateral resistance control electrode 7 and longitudinal electrical resistance control electrode 8, and its thickness is 1/2nd of control grid [6] position silicon dioxide separation layer thickness;
7) evaporation of chromium electrode metal level: at p type doped silicon layer and evaporation last layer chromium electrode metal level above the silicon dioxide layer;
8) photoetching of chromium electrode metal level: the chromium electrode metal level to evaporation carries out photoetching; Require the chromium electrode metal level to cover the p type doped silicon layer 3 at source electrode position, form source electrode 9 electrodes; Require the chromium electrode metal level to cover the p type doped silicon layer 3 at drain electrode position, form drain electrode 5 electrodes; Require the chromium electrode metal level to cover the silicon dioxide separator 4 at control grid position, form control grid 6 electrodes; Require the chromium electrode metal level to cover the silicon dioxide separator 4 at lateral resistance control electrode position, form lateral resistance control electrode 7 electrodes; Require the chromium electrode metal level to cover the silicon dioxide separator 4 at longitudinal electrical resistance control electrode position, form longitudinal electrical resistance control electrode 7 electrodes; Require each electrode of drain electrode 5, control grid 6, lateral resistance control electrode 7, longitudinal electrical resistance control electrode 8 and source electrode 9 not link to each other mutually;
9) making of silicon dioxide layer of protection 10: on the three grid emitter cathode control circuit structure, prepare silicon dioxide layer; Requirement all covers all drain electrodes 5, control grid 6, lateral resistance control electrode 7, longitudinal electrical resistance control electrode 8, source electrode 9 and silicon dioxide separator get up;
10) photoetching of silicon dioxide layer of protection 10: silicon dioxide layer of protection is carried out photoetching; Require only to expose chromium metal-drain 5 parts, remainder serves as the silicon dioxide layer of protection 10 in the three grid emitter cathode control circuit structure;
11) glass surface clean: whole glass surface is carried out clean, remove dust and impurity.
The carbon nanotube cathod flat-panel monitor that has the three grid emitter cathode control circuit structure among the present invention mainly is made of anode plate structure, cathode plane plate structure, control gate electrode structure and attached getter element thereof.The manufacture craft of the carbon nanotube cathod flat-panel monitor that has the three grid emitter cathode control circuit structure among the present invention is as follows:
1, the making of minus plate:
1) printing of carbon nanotube cathod 11:, on the chromium metal-drain 5 in the three grid emitter cathode control circuit structure of carbon nano-tube 11 negative electrode panels 1, be formed for carbon nano-tube 11 negative electrodes of emitting electrons in conjunction with silk-screen printing technique;
2) reprocessing of carbon nano-tube 11 negative electrodes: carbon nano-tube 11 negative electrodes after the printing are carried out reprocessing, to improve the field emission characteristics of carbon nano-tube.
2, the making of anode plate:
1) cleaning anode flat plate glass 12 is removed surface impurity;
2) evaporation one deck tin indium oxide film on anode flat plate glass 12;
3) tin indium oxide film is carried out photoetching, form anode conducting bar 13;
4),, be used to prevent the parasitic electrons emission 14 layers of the non-display area of bus printing insulation pastes in conjunction with silk-screen printing technique; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace; 5) in conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer 15 on bus; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
3, device assembling: negative electrode panel, anode plate, control grid and glass are enclosed frame [16] be assembled together, and getter 17 is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip.
4, finished product is made: the device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (4)
1, a kind of flat-panel monitor that has three grid emitter cathode control circuit, comprise by negative electrode panel [1], anode plate [12] and all around glass enclose phosphor powder layer [15] on tin indium oxide thin layer of tin indium oxide thin layer [13] that photoetching is arranged on sealed vacuum chamber that frame [16] constituted, the anode plate [12] and preparation, go up the carbon nanotube cathod [11] of preparation at negative electrode panel [1], it is characterized in that:
For the down corresponding carbon nanotube cathod preparation of each pixel is useful on the feasible whole carbon nanotube cathod of adjusting the carbon nanotube field emission electronics can be even, reliable and stable, the three grid emitter cathode control circuit structure of high efficiency emitting electrons,
Described three grid emitter cathode control circuit structure comprises negative electrode panel [1], bottom metal layers [2], doped silicon layer [3], silicon dioxide insulator separator [4], drain electrode [5], control grid [6], lateral resistance control electrode [7], longitudinal electrical resistance control electrode [8], source electrode [9], silicon dioxide layer of protection [10] part from top to bottom successively.
2, the flat-panel monitor that has three grid emitter cathode control circuit as claimed in claim 1 is characterized in that: the negative electrode panel of described three grid emitter cathode control circuit structure is soda-lime glass or Pyrex; Bottom metal layers is one of gold, silver, nickel, chromium metal; Doped silicon layer is p type or n type; Doped silicon layer is one deck or is multilayer.
3, the flat-panel monitor that has three grid emitter cathode control circuit as claimed in claim 1, it is characterized in that: described three grid emitter cathode control circuit structure is electrode metal layer of making on the silicon dioxide insulator separator, serves as source electrode, drain electrode, control grid, lateral resistance control electrode and longitudinal electrical resistance control electrode respectively; Source electrode, drain electrode, control grid, lateral resistance control electrode and longitudinal electrical resistance control grid are made of metal gold, silver, nickel, chromium, aluminium; At source electrode, control grid, lateral resistance control electrode and covering last layer silicon dioxide layer of protection above the longitudinal electrical resistance control electrode; Carbon nanotube cathod is prepared in drain electrode.
4, a kind of manufacture craft that has the flat-panel monitor of three grid emitter cathode control circuit is characterized in that: concrete manufacture craft is as follows:
A, three grid emitter cathode control circuit structure comprise negative electrode panel [1], bottom metal layers [2], doped silicon layer [3], silicon dioxide insulator separator [4], drain electrode [5], control grid [6], lateral resistance control electrode [7], longitudinal electrical resistance control electrode [8], source electrode [9], silicon dioxide layer of protection [10], and adopt following technology to make:
1) making of negative electrode panel [1]: the bulk substrate material glass is carried out scribing;
2) making of bottom metal layers [2]: the bottom metal layers [2] of on negative electrode panel [1], preparing one deck chromium;
3) making of doped silicon layer [3]: the doped silicon layer [3] of on silicon dioxide layer, making one deck p type;
4) photoetching of doped silicon layer [3]: the doped silicon layer to the p type carries out photoetching; Conducting channel just is formed in the doped silicon layer of p type;
5) making of silicon dioxide insulator separator [4]: on the doped silicon layer of p type, prepare silicon dioxide insulator separator [4]; This silicon dioxide insulator separator [4] serves as the doped silicon layer [3] of p type and the dielectric isolation layer between the electrode;
6) photoetching of silicon dioxide insulator separator [4]: silicon dioxide insulator separator [4] is carried out photoetching; The silicon dioxide insulator separator [4] that requirement will drain below the position of [5] etches away fully, exposes doped silicon layer [3]; Requirement etches away the silicon dioxide insulator separator [4] below the position of source electrode [9] fully, exposes doped silicon layer [3]; Require the silicon dioxide insulator separator [4] at the position of control grid [6] not to be etched; Requirement is with silicon dioxide insulator separator [4] partial etching at the position of lateral resistance control electrode [7] and longitudinal electrical resistance control electrode [8], and its thickness is 1/2nd of control grid [6] position silicon dioxide insulator separator [4] thickness;
7) evaporation of chromium electrode metal level: at the doped silicon layer of p type and evaporation last layer chromium electrode metal level above the silicon dioxide insulator separator [4];
8) photoetching of chromium electrode metal level: the chromium electrode metal level to evaporation carries out photoetching; Require the chromium electrode metal level to cover the doped silicon layer of the p type at source electrode position, form source electrode [9] electrode; Require the chromium electrode metal level to cover the doped silicon layer of the p type at drain electrode position, form drain electrode [5] electrode; Require the chromium electrode metal level to cover the silicon dioxide insulator separator [4] at control grid position, form control grid [6] electrode; Require the chromium electrode metal level to cover the silicon dioxide insulator separator [4] at lateral resistance control electrode position, form lateral resistance control electrode [7] electrode; Require the chromium electrode metal level to cover the silicon dioxide insulator separator [4] at longitudinal electrical resistance control electrode position, form longitudinal electrical resistance control electrode [7] electrode; Require drain electrode [5], control grid [6], lateral resistance control electrode [7], longitudinal electrical resistance control electrode [8] not to link to each other mutually with each electrode of source electrode [9];
9) making of silicon dioxide layer of protection [10]: on the three grid emitter cathode control circuit structure, prepare silicon dioxide layer; Requirement all covers all drain electrodes [5], control grid [6], lateral resistance control electrode [7], longitudinal electrical resistance control electrode [8], source electrode [9] and silicon dioxide separator get up;
10) photoetching of silicon dioxide layer of protection [10]: silicon dioxide layer of protection is carried out photoetching; Require only to expose drain electrode [5] part of chromium metal, remainder serves as the silicon dioxide layer of protection [10] in the three grid emitter cathode control circuit structure;
11) clean of glass surface:, remove dust and impurity to whole glass surface clean;
12) printing of carbon nanotube cathod [11]: in conjunction with silk-screen printing technique, carbon nano-tube [11] is printed in the drain electrode [5] of the chromium metal in the three grid emitter cathode control circuit structure of negative electrode panel [1], is formed for the carbon nanotube cathod [11] of emitting electrons;
13) reprocessing of carbon nanotube cathod [11]: the carbon nanotube cathod [11] after the printing is carried out reprocessing, to improve the field emission characteristics of carbon nano-tube;
The making of b, anode plate:
1) cleaning anode flat plate glass [12] is removed surface impurity;
2) go up evaporation one deck tin indium oxide film at anode flat plate glass [12];
3) tin indium oxide film is carried out photoetching, form anode conducting bar [13];
4) in conjunction with silk-screen printing technique, the non-display area printing insulation paste layer [14] at bus is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes;
5) in conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer [15] on bus; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes;
C, device assembling: anode plate, three grid emitter cathode control circuit structure and glass are enclosed frame [16] be assembled together, and getter [17] is put in the middle of the cavity, fix with glass powder with low melting point; Around face glass, smeared glass powder with low melting point, fixed with clip;
D, finished product are made: the device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100484138A CN100527330C (en) | 2005-10-18 | 2005-10-18 | Flat panel display with three grid emitter cathode control circuit and its producing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100484138A CN100527330C (en) | 2005-10-18 | 2005-10-18 | Flat panel display with three grid emitter cathode control circuit and its producing process |
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| Publication Number | Publication Date |
|---|---|
| CN1750228A CN1750228A (en) | 2006-03-22 |
| CN100527330C true CN100527330C (en) | 2009-08-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100484138A Expired - Fee Related CN100527330C (en) | 2005-10-18 | 2005-10-18 | Flat panel display with three grid emitter cathode control circuit and its producing process |
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| Country | Link |
|---|---|
| CN (1) | CN100527330C (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4486767A (en) * | 1980-06-06 | 1984-12-04 | Thomson-Csf | Bipolar element having a non-linear conductivity characteristic, and commutating device incorporating the same |
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2005
- 2005-10-18 CN CNB2005100484138A patent/CN100527330C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4486767A (en) * | 1980-06-06 | 1984-12-04 | Thomson-Csf | Bipolar element having a non-linear conductivity characteristic, and commutating device incorporating the same |
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| Publication number | Publication date |
|---|---|
| CN1750228A (en) | 2006-03-22 |
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