CN100524983C - 半导体激光器装置 - Google Patents

半导体激光器装置 Download PDF

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Publication number
CN100524983C
CN100524983C CNB038237814A CN03823781A CN100524983C CN 100524983 C CN100524983 C CN 100524983C CN B038237814 A CNB038237814 A CN B038237814A CN 03823781 A CN03823781 A CN 03823781A CN 100524983 C CN100524983 C CN 100524983C
Authority
CN
China
Prior art keywords
semiconductor laser
exiting surface
reflecting surface
reflection unit
laser apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038237814A
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English (en)
Chinese (zh)
Other versions
CN1689203A (zh
Inventor
阿里克西·米可哈洛夫
威兰德·希尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hentze Lissotschenko Patentverwaltungs GmbH and Co KG
Original Assignee
Hentze Lissotschenko Patentverwaltungs GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hentze Lissotschenko Patentverwaltungs GmbH and Co KG filed Critical Hentze Lissotschenko Patentverwaltungs GmbH and Co KG
Publication of CN1689203A publication Critical patent/CN1689203A/zh
Application granted granted Critical
Publication of CN100524983C publication Critical patent/CN100524983C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CNB038237814A 2002-09-02 2003-07-30 半导体激光器装置 Expired - Fee Related CN100524983C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10240949.8 2002-09-02
DE2002140949 DE10240949A1 (de) 2002-09-02 2002-09-02 Halbleiterlaservorrichtung
DE10250046.0 2002-10-25

Publications (2)

Publication Number Publication Date
CN1689203A CN1689203A (zh) 2005-10-26
CN100524983C true CN100524983C (zh) 2009-08-05

Family

ID=31197604

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB038237814A Expired - Fee Related CN100524983C (zh) 2002-09-02 2003-07-30 半导体激光器装置
CNB038237822A Expired - Fee Related CN100380754C (zh) 2002-09-02 2003-08-01 半导体激光器装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB038237822A Expired - Fee Related CN100380754C (zh) 2002-09-02 2003-08-01 半导体激光器装置

Country Status (2)

Country Link
CN (2) CN100524983C (de)
DE (1) DE10240949A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100379104C (zh) * 2006-03-31 2008-04-02 中国科学院上海光学精密机械研究所 激光二极管阵列双反馈外腔激光器
DE102008044867A1 (de) * 2008-08-29 2010-03-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. System mit ein- oder zweidimensionalen Reihen von Strahlenquellen
JP6268004B2 (ja) * 2014-03-12 2018-01-24 浜松ホトニクス株式会社 半導体レーザ装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4797894A (en) * 1987-08-21 1989-01-10 Xerox Corporation Alignment method and arrangement for external optical feedback for semiconductor diode lasers
US5050179A (en) * 1989-04-20 1991-09-17 Massachusetts Institute Of Technology External cavity semiconductor laser
US6212216B1 (en) * 1996-12-17 2001-04-03 Ramadas M. R. Pillai External cavity micro laser apparatus
CN1309827A (zh) * 1998-07-10 2001-08-22 布克哈姆技术公共有限公司 外腔激光器
US6773345B2 (en) * 2000-08-25 2004-08-10 Walker Digital, Llc Systems and methods for lottery game play aggregation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6072473A (ja) * 1983-09-29 1985-04-24 Photo Composing Mach Mfg Co Ltd レ−ザ記録装置
US4656641A (en) * 1985-02-04 1987-04-07 Xerox Corporation Laser cavity optical system for stabilizing the beam from a phase locked multi-emitter broad emitter laser
US5523879A (en) * 1991-04-26 1996-06-04 Fuji Xerox Co., Ltd. Optical link amplifier and a wavelength multiplex laser oscillator
EP0712183B1 (de) * 1994-11-14 2002-08-21 Mitsui Chemicals, Inc. Wellenlängenstabilisierter Lichtquelle
US6301274B1 (en) * 1998-03-30 2001-10-09 Coretek, Inc. Tunable external cavity laser
DE59912912D1 (de) * 1998-05-25 2006-01-19 Fisba Optik Ag St Gallen Verfahren und Vorrichtung zur Formung eines kollimierten Lichtstrahls aus den Emissionen mehrerer Lichtquellen
US6327293B1 (en) * 1998-08-12 2001-12-04 Coherent, Inc. Optically-pumped external-mirror vertical-cavity semiconductor-laser
DE10043896B4 (de) * 1999-09-10 2010-09-16 Fujifilm Corp. Laservorrichtung
DE10014181A1 (de) * 2000-03-23 2001-10-11 Volker Raab Resonator für Laser und insbesondere Halbleiterlaser zur Generierung beliebiger Emissions-Winkelverteilungen
WO2001095445A2 (en) * 2000-06-02 2001-12-13 Coherent, Inc. Optically-pumped semiconductor laser with output coupled to optical fiber

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4797894A (en) * 1987-08-21 1989-01-10 Xerox Corporation Alignment method and arrangement for external optical feedback for semiconductor diode lasers
US5050179A (en) * 1989-04-20 1991-09-17 Massachusetts Institute Of Technology External cavity semiconductor laser
US6212216B1 (en) * 1996-12-17 2001-04-03 Ramadas M. R. Pillai External cavity micro laser apparatus
CN1309827A (zh) * 1998-07-10 2001-08-22 布克哈姆技术公共有限公司 外腔激光器
US6773345B2 (en) * 2000-08-25 2004-08-10 Walker Digital, Llc Systems and methods for lottery game play aggregation

Also Published As

Publication number Publication date
CN1701479A (zh) 2005-11-23
DE10240949A1 (de) 2004-03-04
CN100380754C (zh) 2008-04-09
CN1689203A (zh) 2005-10-26

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090805

Termination date: 20100730