CN100524675C - Method for forming metal projection - Google Patents
Method for forming metal projection Download PDFInfo
- Publication number
- CN100524675C CN100524675C CNB200610126237XA CN200610126237A CN100524675C CN 100524675 C CN100524675 C CN 100524675C CN B200610126237X A CNB200610126237X A CN B200610126237XA CN 200610126237 A CN200610126237 A CN 200610126237A CN 100524675 C CN100524675 C CN 100524675C
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- layer
- photoresist layer
- metal coupling
- conductive
- formation metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention provides a method of producing the metal bump, and it includes the following steps: provide a substrate which contains a number of conductive welding pad; form the first photo resist layer on the substrate and this photo resist layer would cover the conductive welding pad; perform planarization to remove the part of the photo resist layer; electroplate the metal layer on the conductive layer; form the second photographical photo resist layer; use this photographical photo resist layer as the shielding layer to remove the metal layer and the conductive layer which are not covered by the photographical photo resist layer; remove the second photo resist layer; form the anti-welding layer on the substrate, and make a num of opening on the anti-welding layer to expose the metal layer that located on the conductive welding pad.
Description
Technical field
The present invention is about a kind of method that forms metal coupling, particularly a kind of method that is applied to the formation metal coupling of little pitch packages processing procedure.
Background technology
See also Figure 1A to Fig. 1 E, be a kind of flow process generalized section of manufacture method of known formation metal coupling.At first, shown in Figure 1A, provide substrate 100, this substrate 100 is provided with a plurality of conductive welding pad 102.Then, on substrate 100, form the welding resisting layer 110 of patterning.Wherein, the method that forms the welding resisting layer 110 of this patterning is elder generation's coating one deck welding resisting layer 110 on substrate 100, forms a plurality of first openings 112 by a patterning step (for example exposure imaging) then, and exposes conductive welding pad 102.Afterwards, on the welding resisting layer 110 of patterning, form conductive layer 120, the sidewall of first opening 112 of the welding resisting layer 110 of these conductive layer 120 overlay patternization and conductive welding pad 102.Then, shown in Figure 1B, form patterned light blockage layer 130 on conductive layer 120, the photoresist layer 130 of this patterning has a plurality of second openings 132 to expose conductive layer 120.In addition, the method that forms this patterned light blockage layer 130 is elder generation's coating one deck photoresist layer 130 on conductive layer 120, forms a plurality of second openings 132 by patterning step (for example exposure imaging) then, and exposed portions serve conductive layer 120.Then, shown in Fig. 1 C, on the conductive layer 130 that exposes, electroplate a metal level 140, filling up first opening 112, but not exclusively fill up second opening 132.Then, shown in Fig. 1 D, remove the photoresist layer 130 of patterning, and expose remaining conductive layer 120 and metal level 140.Then, remaining conductive layer 120 is carried out comprehensive etch processes with metal level 140, because the very thin thickness of conductive layer 120 removes so conductive layer 120 is etched soon, only stay metal level 140 and the position conductive layer 120 below metal level 140, shown in Fig. 1 D.Generally speaking, if the material of this metal level 140 is a copper, just do not carry out the reflow step, then remaining metal level 140 and the position conductive layer 120 below metal level 140 just forms a metal coupling (Metal bump); If the material of this metal level 140 is a tin, then can carry out the step of a reflow more further, so that the conductive layer 120 below metal level 140 forms a pre-welding material 150 (Pre-solder) with metal level 140 and position, shown in Fig. 1 E.
In above-mentioned prior art, because the uniformity of the electroplating thickness of metal level 140 is not good, cause the big or small uniformity of metal coupling 150 of last formation also undesirable, the yield of product descends when therefore causing encapsulation procedure.In the encapsulation procedure that requires little spacing (fine pitch) now, existing manufacturing method thereof not only product quality can't reach requirement of client, and the product yield of encapsulation procedure also is difficult to promote, and therefore causes the raising of manufacturing cost.
Summary of the invention
The objective of the invention is to for overcoming above-mentioned the deficiencies in the prior art, a kind of method that forms metal coupling of improvement is provided, solve the increase of above-mentioned prior art processing procedure cost and the problem that the product yield descends, improve process rate and the purpose that reduces the processing procedure cost to reach.
Technical essential of the present invention is: a kind of method that forms metal coupling is provided, and this method comprises following steps at least: a substrate is provided, which is provided with a plurality of conductive welding pad; Form first photoresist layer on substrate, this first photoresist layer promptly covers on these a plurality of conductive welding pad; Carry out planarization, to remove part first photoresist layer to exposing conductive welding pad; On first photoresist layer and conductive welding pad, form conductive layer; Electroplated metal layer on conductive layer; On metal level, form second photoresist layer of patterning; With this second photoresist layer is that shielding removes metal level and the conductive layer that is not covered by this second photoresist layer; Remove this second photoresist layer; And on substrate, form welding resisting layer, wherein welding resisting layer has a plurality of openings to expose the metal level that is positioned on those conductive welding pad.
This planarisation step can adopt amary tape grinding machine or brush wheel grinder.
This first photoresist layer can adopt liquid or solid-state organic membrane or inoranic membrane.
This second photoresist layer can be dry film or organic membrane.
Use the method for the present invention's formation metal coupling, because it utilizes the step of an electric plating of whole board, on a plurality of conductive welding pad, to form a thickness even metal layer, remove unwanted part metals layer afterwards again, so that the metal level that is positioned on each conductive welding pad all has the identical thickness of essence, thereby prevented from indivedual conductive welding pad, to electroplate formed metal layer thickness situation not of uniform size, thereby solved the not good problem of metal coupling size uniformity.So the present invention compares with existing manufacturing method thereof, the present invention's method not only is applicable to closely spaced encapsulation procedure, more can effectively reduce time and cost that encapsulation is made.
Description of drawings
Figure 1A to Fig. 1 E is a kind of flow process generalized section of method of known formation metal coupling; And
Fig. 2 A to Fig. 2 F figure is the flow process generalized section of one of method preferred embodiment of the present invention's formation metal coupling.
Embodiment
Now in conjunction with Figure of description, the method that the present invention is formed metal coupling is described in further detail.
See also Fig. 2 A to Fig. 2 F, be the flow process generalized section of one of the method for the present invention's formation metal coupling preferred embodiment.The present invention's method may further comprise the steps:
At first, shown in Fig. 2 A, provide a substrate 200, which is provided with a plurality of conductive welding pad 202, but do not form welding resisting layer as yet thereon.This substrate 200 can be a printed circuit board (PCB), perhaps also can adopt other to have the substrate of circuit.
Then, form first photoresist layer 210 on substrate 200, this first photoresist layer 210 promptly covers on these a plurality of conductive welding pad 202.This first photoresist layer 210 can be liquid organic membrane or inoranic membrane, and can use for example scraper coating (Blade coating), roller coating (Roller coating), spray coating (Spray coating), curtain type coating (Curtaincoating) and rotary coating methods such as (Spin coating) to form this first photoresist layer 210.This first photoresist layer 210 also can be solid-state organic membrane or inoranic membrane, and can utilize hot pressing embrane method or vacuum film pressing method to form.Wherein in forming the step of first photoresist layer 210, this also comprises a cure process (Curing), in order to first photoresist layer 210 that hardens.
Afterwards, shown in Fig. 2 B, carry out planarization (Planarization), to remove part first photoresist layer 210 to exposing conductive welding pad 202.This planarisation step adopts amary tape grinding machine or brush wheel grinder to grind first photoresist layer 210 that partly removes, and wherein the brush wheel grinder adopts adhesive-bonded fabric brush wheel or ceramic brush wheel, and amary tape grinding machine adopts the abrasive band of containing diamond dust.Other can planarization first photoresist layer 210 milling apparatus and grinding-material also can use.
Then, shown in Fig. 2 C, on first photoresist layer 210 and conductive welding pad 202, form conductive layer 220.The material of this conductive layer 220 can be a kind of in gold, nickel, copper, silver, tin, lead, bismuth, palladium, aluminium, iron, cadmium, zinc and the composition thereof.In addition, the method that forms this conductive layer 220 can be vacuum splashing and plating, plating, chemical deposition or non-electrolytic plating method.
Then, on conductive layer 220, electroplate a metal level 230.The material of metal level 230 can be a kind of in copper, silver, tin, lead, bismuth and the composition thereof.In addition, the method for electroplating this metal level 230 can be vertical electroplates or level is electroplated.
Afterwards, on metal level 230, form second photoresist layer 240 of patterning.This second photoresist layer 240 can be dry film or organic membrane (Organic film).In addition, this step that forms second photoresist layer 240 of this patterning also is included on second photoresist layer 240 carries out exposure imaging, and then removes second photoresist layer 240 of the some of second photoresist layer 240 with the formation patterning.The method that wherein forms second photoresist layer 240 can adopt printing (Printing), roller coating, spray coating, curtain type coating or method of spin coating.The employed light source of exposure imaging step can be ultraviolet light (UV) or laser light.
Then, shown in Fig. 2 D, be that shielding (Mask) removes the metal level 230 and conductive layer 220 that is not covered by this second photoresist layer 240 with second photoresist layer 240 of patterning.
Then, shown in Fig. 2 E, remove this second photoresist layer 240.The method that removes this second photoresist layer 240 can adopt soaks or sprays an inorganic solution or organic solution.Wherein inorganic solution can be NaOH (NaOH) or potassium hydroxide (KOH), and organic solution comprises acetone (Acetone), methyl pyrrolidone (NMP), dimethyl sulfoxide (DMSO) (DMSO), amino ethoxy ethanol (AE), dimethyl amine (DMA), dimethyl amide (DMF) or oxolane (THF).
Afterwards, form a welding resisting layer 250 on substrate 200, wherein welding resisting layer 250 has a plurality of openings 252 to expose the metal level 230 and conductive layer 220 that is positioned on the conductive welding pad 202.The material of this welding resisting layer 250 is green lacquer.This welding resisting layer 250 also can be for example with formed liquid organic membrane of method or inoranic membranes such as scraper coating, roller coating, spray coating, curtain type coating and rotary coating, or utilizes hot pressing embrane method or formed solid-state organic membrane of vacuum film pressing method or inoranic membrane.
At last; shown in Fig. 2 F; on the metal level 230 that exposes, form a protective layer 260; to increase the non-oxidizability of metal level 230; wherein the material of protective layer 260 can be a kind of in gold, nickel, copper, silver, tin, lead, bismuth, palladium, aluminium, iron, cadmium, zinc and the composition thereof, or organic solderability preservative (OSP).
In brief, the method of the present invention's formation metal coupling promptly adopts the step of an electric plating of whole board accurately to control the electroplating thickness that is positioned at the metal level on the conductive welding pad, then metal level does not have too big otherness through the big young pathbreaker of thickness between the formed metal coupling behind the etching step, so can effectively improve the product yield of little pitch packages processing procedure.Therefore, the present invention can overcome the shortcoming of prior art, and the method for using the present invention not only can obtain the product of better quality, more can effectively reduce time and cost that encapsulation is made.
By the preferred embodiment of the invention described above as can be known, use the method for the present invention's formation metal coupling, its advantage is to utilize an electric plating of whole board step, prevent from indivedual conductive welding pad, to electroplate formed metal layer thickness situation not of uniform size, therefore solved the not good problem of metal coupling size uniformity.So for the product that has little spacing to require, the present invention's metal coupling manufacturing method thereof can effectively solve prior art problems.
Claims (14)
1. method that forms metal coupling comprises:
One substrate is provided, which is provided with a plurality of conductive welding pad;
Form first photoresist layer on this substrate, this first photoresist layer covers on these a plurality of conductive welding pad;
Carry out planarization, to remove this first photoresist layer of part to exposing this a plurality of conductive welding pad;
On this first photoresist layer and this a plurality of conductive welding pad, form a conductive layer;
On this conductive layer, electroplate a metal level;
On this metal level, form second photoresist layer of a patterning;
Second photoresist layer with this patterning is that shielding (Mask) removes metal level and the conductive layer that is not covered by second photoresist layer of this patterning;
Remove second photoresist layer of this patterning; And
Form a welding resisting layer on this substrate, wherein this welding resisting layer has a plurality of openings to expose this metal level that is positioned on these a plurality of conductive welding pad.
2. the method for formation metal coupling as claimed in claim 1 is characterized in that: further be included in and form a protective layer on this this metal level that exposes.
3. the method for formation metal coupling as claimed in claim 2 is characterized in that: the material of this protective layer can be a kind of in gold, nickel, copper, silver, tin, lead, bismuth, palladium, aluminium, iron, cadmium, zinc and the composition thereof.
4. the method for formation metal coupling as claimed in claim 1 or 2 is characterized in that: form this first photoresist layer and can adopt a kind of of scraper coating, roller coating, spray coating, curtain type coating, rotary coating, hot pressing embrane method and vacuum film pressing method with the method that forms this second photoresist layer.
5. the method for formation metal coupling as claimed in claim 1 or 2 is characterized in that: the method that forms this first photoresist layer also comprises a cure process, and this first photoresist layer hardens.
6. the method for formation metal coupling as claimed in claim 1 or 2 is characterized in that: can use a kind of in amary tape grinding machine and the brush wheel grinder when carrying out planarization.
7. the method for formation metal coupling as claimed in claim 1 or 2 is characterized in that: the method that forms this conductive layer can adopt a kind of in vacuum splashing and plating, chemical deposition and the electroless plating.
8. the method for formation metal coupling as claimed in claim 1 or 2 is characterized in that: the method that forms this conductive layer can adopt plating.
9. the method for formation metal coupling as claimed in claim 1 or 2 is characterized in that: the material of this conductive layer can be a kind of in gold, nickel, copper, silver, tin, lead, bismuth, palladium, aluminium, iron, cadmium, zinc and the composition thereof.
10. the method for formation metal coupling as claimed in claim 1 or 2 is characterized in that: the method for electroplating this metal level can adopt a kind of in electroplating of vertical plating or level.
11. the method for formation metal coupling as claimed in claim 1 or 2 is characterized in that: the material of this metal level can be a kind of in copper, silver, tin, lead, bismuth and the composition thereof.
12. the method for formation metal coupling as claimed in claim 1 or 2 is characterized in that: remove second photoresist layer and can use an inorganic solution or an organic solution; This inorganic solution comprises NaOH or potassium hydroxide at least, and this organic solution can be acetone, methyl pyrrolidone, dimethyl sulfoxide (DMSO), amino ethoxy ethanol, dimethyl amine, dimethyl amide or oxolane.
13. the method for formation metal coupling as claimed in claim 1 or 2 is characterized in that: the method that forms this welding resisting layer can adopt a kind of in printing, roller coating, spray coating, curtain type coating, rotary coating, hot pressing embrane method or the vacuum film pressing method.
14. the method for formation metal coupling as claimed in claim 1 or 2 is characterized in that: this welding resisting layer comprises organic membrane or the inoranic membrane or the solid-state organic membrane or the inoranic membrane of liquid state at least.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610126237XA CN100524675C (en) | 2006-08-22 | 2006-08-22 | Method for forming metal projection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610126237XA CN100524675C (en) | 2006-08-22 | 2006-08-22 | Method for forming metal projection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101131949A CN101131949A (en) | 2008-02-27 |
| CN100524675C true CN100524675C (en) | 2009-08-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200610126237XA Expired - Fee Related CN100524675C (en) | 2006-08-22 | 2006-08-22 | Method for forming metal projection |
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| Country | Link |
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| CN (1) | CN100524675C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621015B (en) * | 2008-07-04 | 2011-03-23 | 南茂科技股份有限公司 | Metal lug surface planarization method |
| CN103165481B (en) * | 2011-12-13 | 2015-07-15 | 颀邦科技股份有限公司 | Bump manufacture technology and structure thereof |
| US20180226372A1 (en) * | 2017-02-08 | 2018-08-09 | Nanya Technology Corporation | Package structure and manufacturing method thereof |
| US20180315725A1 (en) * | 2017-04-26 | 2018-11-01 | Nanya Technology Corporation | Package structure having bump with protective anti-oxidation coating |
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2006
- 2006-08-22 CN CNB200610126237XA patent/CN100524675C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101131949A (en) | 2008-02-27 |
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Granted publication date: 20090805 Termination date: 20190822 |