CN100523850C - System plate and method for testing chip with high pressure - Google Patents
System plate and method for testing chip with high pressure Download PDFInfo
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- CN100523850C CN100523850C CNB2006101195587A CN200610119558A CN100523850C CN 100523850 C CN100523850 C CN 100523850C CN B2006101195587 A CNB2006101195587 A CN B2006101195587A CN 200610119558 A CN200610119558 A CN 200610119558A CN 100523850 C CN100523850 C CN 100523850C
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2006101195587A CN100523850C (en) | 2006-12-13 | 2006-12-13 | System plate and method for testing chip with high pressure |
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CNB2006101195587A CN100523850C (en) | 2006-12-13 | 2006-12-13 | System plate and method for testing chip with high pressure |
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CN101201384A CN101201384A (en) | 2008-06-18 |
CN100523850C true CN100523850C (en) | 2009-08-05 |
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CNB2006101195587A Active CN100523850C (en) | 2006-12-13 | 2006-12-13 | System plate and method for testing chip with high pressure |
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CN110376504B (en) * | 2019-06-27 | 2022-06-17 | 瑞芯微电子股份有限公司 | IC high-voltage damage simulation system and method |
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CN101201384A (en) | 2008-06-18 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TR01 | Transfer of patent right |
Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |