CN100519691C - 近红外有机电致发光材料与器件及器件的制备方法 - Google Patents
近红外有机电致发光材料与器件及器件的制备方法 Download PDFInfo
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- CN100519691C CN100519691C CNB200610017222XA CN200610017222A CN100519691C CN 100519691 C CN100519691 C CN 100519691C CN B200610017222X A CNB200610017222X A CN B200610017222XA CN 200610017222 A CN200610017222 A CN 200610017222A CN 100519691 C CN100519691 C CN 100519691C
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- 239000000463 material Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 12
- 229920000144 PEDOT:PSS Polymers 0.000 claims abstract description 79
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 229920000642 polymer Polymers 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims abstract description 5
- 238000004528 spin coating Methods 0.000 claims description 63
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 claims description 62
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 52
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 51
- 239000000975 dye Substances 0.000 claims description 37
- 239000002105 nanoparticle Substances 0.000 claims description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 23
- 230000008020 evaporation Effects 0.000 claims description 20
- 238000001704 evaporation Methods 0.000 claims description 20
- 238000002360 preparation method Methods 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 19
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 238000009832 plasma treatment Methods 0.000 claims description 16
- 238000001771 vacuum deposition Methods 0.000 claims description 16
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 239000002322 conducting polymer Substances 0.000 claims description 6
- 239000011258 core-shell material Substances 0.000 claims description 6
- 239000005083 Zinc sulfide Substances 0.000 claims description 5
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- 229920002554 vinyl polymer Polymers 0.000 claims description 4
- -1 indoles 4-methyl isophthalic acid-benzene sulfonate Chemical class 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 241000790917 Dioxys <bee> Species 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 2
- 229930192474 thiophene Natural products 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 abstract 1
- 239000007850 fluorescent dye Substances 0.000 abstract 1
- 238000000053 physical method Methods 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 description 7
- 229910004613 CdTe Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- LVYZJEPLMYTTGH-UHFFFAOYSA-H dialuminum chloride pentahydroxide dihydrate Chemical compound [Cl-].[Al+3].[OH-].[OH-].[Al+3].[OH-].[OH-].[OH-].O.O LVYZJEPLMYTTGH-UHFFFAOYSA-H 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- DDXPDMVXEDEMQT-UHFFFAOYSA-N erbium quinolin-8-ol Chemical compound [Er].Oc1cccc2cccnc12 DDXPDMVXEDEMQT-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200610017222XA CN100519691C (zh) | 2006-09-29 | 2006-09-29 | 近红外有机电致发光材料与器件及器件的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CNB200610017222XA CN100519691C (zh) | 2006-09-29 | 2006-09-29 | 近红外有机电致发光材料与器件及器件的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1970681A CN1970681A (zh) | 2007-05-30 |
CN100519691C true CN100519691C (zh) | 2009-07-29 |
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Application Number | Title | Priority Date | Filing Date |
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CNB200610017222XA Expired - Fee Related CN100519691C (zh) | 2006-09-29 | 2006-09-29 | 近红外有机电致发光材料与器件及器件的制备方法 |
Country Status (1)
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CN (1) | CN100519691C (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101593814B (zh) * | 2009-06-29 | 2011-04-13 | 彩虹集团公司 | 一种有机电致发光显示器件及其制备方法 |
CN102832351A (zh) * | 2012-09-11 | 2012-12-19 | 深圳市华星光电技术有限公司 | 红外有机电致发光二极管 |
CN104046351B (zh) * | 2014-04-29 | 2016-11-16 | 中山大学 | 具有余辉发光性能的有机发光材料及其合成方法和应用 |
CN113113834B (zh) * | 2021-03-10 | 2023-02-03 | 华东师范大学 | 一种集成有电致发光结构的中红外空芯光纤及制备方法 |
CN116709798A (zh) * | 2023-06-17 | 2023-09-05 | 陕西科技大学 | 一种近红外发光二极管及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1231251A1 (en) * | 2001-02-07 | 2002-08-14 | Agfa-Gevaert | Thin film inorganic light emitting diode |
CN1130956C (zh) * | 1996-07-29 | 2003-12-10 | 剑桥显示技术有限公司 | 具有电极保护的场致发光元件 |
WO2005071488A1 (en) * | 2004-01-21 | 2005-08-04 | Kodak Polychrome Graphics Gmbh | Lithographic printing plate precursors with mercapto-functionalized free-radical polymerizable monomers |
-
2006
- 2006-09-29 CN CNB200610017222XA patent/CN100519691C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1130956C (zh) * | 1996-07-29 | 2003-12-10 | 剑桥显示技术有限公司 | 具有电极保护的场致发光元件 |
EP1231251A1 (en) * | 2001-02-07 | 2002-08-14 | Agfa-Gevaert | Thin film inorganic light emitting diode |
WO2005071488A1 (en) * | 2004-01-21 | 2005-08-04 | Kodak Polychrome Graphics Gmbh | Lithographic printing plate precursors with mercapto-functionalized free-radical polymerizable monomers |
Non-Patent Citations (3)
Title |
---|
Q-CdS/聚合物纳米复合膜的制备与荧光性质. 纪欣.高分子学报,第1期. 2005 * |
半导体纳米晶体的光致发光特性及在生物材料荧光标记中的应用. 孙宝全.分析化学,第9期. 2002 * |
有机-无机纳米复合光折变材料的合成研究. 吴仪温.武汉理工大学学报,第27卷第5期. 2005 * |
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CN1970681A (zh) | 2007-05-30 |
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Owner name: CHANGZHOU INSTITUTE OF ENERGY STORAGE MATERIALS + Free format text: FORMER OWNER: CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY HINESE ACADEMY OF SCIENCES Effective date: 20121231 |
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Effective date of registration: 20121231 Address after: Changzhou City, Jiangsu province Hehai road 213000 No. 9 Patentee after: Changzhou Institute of Energy Storage Materials & Devices Address before: 130022 Changchun people's street, Jilin, No. 5625 Patentee before: Changchun Institue of Applied Chemistry, Chinese Academy of Sciences |
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Effective date of registration: 20161123 Address after: 130022 Changchun people's street, Jilin, No. 5625 Patentee after: Changchun Institue of Applied Chemistry, Chinese Academy of Sciences Address before: Changzhou City, Jiangsu province Hehai road 213000 No. 9 Patentee before: Changzhou Institute of Energy Storage Materials & Devices |
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