CN100517730C - Flat display device and CMOS - Google Patents
Flat display device and CMOS Download PDFInfo
- Publication number
- CN100517730C CN100517730C CNB2006101100905A CN200610110090A CN100517730C CN 100517730 C CN100517730 C CN 100517730C CN B2006101100905 A CNB2006101100905 A CN B2006101100905A CN 200610110090 A CN200610110090 A CN 200610110090A CN 100517730 C CN100517730 C CN 100517730C
- Authority
- CN
- China
- Prior art keywords
- active channel
- tft
- basically
- shape
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 59
- 229920005591 polysilicon Polymers 0.000 claims abstract description 51
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 230000000295 complement effect Effects 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 36
- 239000004973 liquid crystal related substance Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 19
- 238000002425 crystallisation Methods 0.000 description 15
- 230000008025 crystallization Effects 0.000 description 15
- 239000012535 impurity Substances 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 10
- 239000012528 membrane Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 230000002950 deficient Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Grain shape | The Vth (volt) of P type TFT | The Vth (volt) of N type TFT |
Fig. 7 A (anisotropy) | ?-4.82 | ?1.41 |
Fig. 7 B (anisotropy) | ?-4.01 | ?2.34 |
Fig. 7 C (anisotropy) | ?-5.84 | ?0.92 |
Fig. 7 D (isotropism) | ?-11.60 | ?7.90 |
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR48889/03 | 2003-07-16 | ||
KR1020030048889A KR100552958B1 (en) | 2003-07-16 | 2003-07-16 | Flat panel display device comprising polysilicone thin film transistor and method thereof |
KR50772/03 | 2003-07-23 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100712426A Division CN1324696C (en) | 2003-07-16 | 2004-07-16 | Flat panel display device comprising polysilicon thin film transistor and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1921124A CN1921124A (en) | 2007-02-28 |
CN100517730C true CN100517730C (en) | 2009-07-22 |
Family
ID=37222253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101100905A Active CN100517730C (en) | 2003-07-16 | 2004-07-16 | Flat display device and CMOS |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100552958B1 (en) |
CN (1) | CN100517730C (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106847837A (en) * | 2017-04-26 | 2017-06-13 | 京东方科技集团股份有限公司 | A kind of complementary thin-film transistor and preparation method thereof and array base palte |
CN106910749A (en) * | 2017-04-19 | 2017-06-30 | 京东方科技集团股份有限公司 | Low-temperature polycrystalline silicon layer and preparation method, display base plate and display device |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101251998B1 (en) | 2006-02-20 | 2013-04-08 | 삼성디스플레이 주식회사 | Organic light emitting diode display and method for manufacturing the same |
KR100934480B1 (en) * | 2009-03-17 | 2009-12-30 | 실리콘 디스플레이 (주) | Organic luminescence dispaly panel and fabricating method tererof |
CN104599959A (en) * | 2014-12-24 | 2015-05-06 | 深圳市华星光电技术有限公司 | Manufacturing method and structure of low-temperature polycrystalline silicon TFT substrate |
KR102384289B1 (en) * | 2017-10-17 | 2022-04-08 | 삼성디스플레이 주식회사 | Laser crystalling apparatus |
-
2003
- 2003-07-16 KR KR1020030048889A patent/KR100552958B1/en active IP Right Grant
-
2004
- 2004-07-16 CN CNB2006101100905A patent/CN100517730C/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106910749A (en) * | 2017-04-19 | 2017-06-30 | 京东方科技集团股份有限公司 | Low-temperature polycrystalline silicon layer and preparation method, display base plate and display device |
US10629638B2 (en) | 2017-04-19 | 2020-04-21 | Boe Technology Group Co., Ltd. | LTPS layer, method for fabricating the same, display substrate and display device |
CN106847837A (en) * | 2017-04-26 | 2017-06-13 | 京东方科技集团股份有限公司 | A kind of complementary thin-film transistor and preparation method thereof and array base palte |
CN106847837B (en) * | 2017-04-26 | 2020-01-10 | 京东方科技集团股份有限公司 | Complementary thin film transistor, manufacturing method thereof and array substrate |
Also Published As
Publication number | Publication date |
---|---|
CN1921124A (en) | 2007-02-28 |
KR20050009532A (en) | 2005-01-25 |
KR100552958B1 (en) | 2006-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8987120B2 (en) | Flat panel display device comprising polysilicon thin film transistor and method of manufacturing the same | |
KR970002004B1 (en) | Semiconductor device and method for forming the same | |
KR960011183B1 (en) | Semiconductor device | |
US5847411A (en) | Semiconductor device having a channel region including a vacancy-introduced polysilicon layer | |
US6569715B1 (en) | Large grain single crystal vertical thin film polysilicon mosfets | |
US20060261339A1 (en) | Thin film semiconductor device and method for manufacturing same | |
US20060084204A1 (en) | Method of manufacturing a thin film transistor | |
CN103762174A (en) | Preparation method for thin-film transistor | |
US20070023759A1 (en) | Thin film transistor, circuit apparatus and liquid crystal display | |
CN100517730C (en) | Flat display device and CMOS | |
US7535024B2 (en) | Display device and fabrication method thereof | |
CN1297008C (en) | CMOS thin film transistor and display device using the same | |
CN100474627C (en) | Thin film transistor with light doped drain/offset (LDD/OFFSET) area structure | |
KR100542989B1 (en) | Cmos thin film transistor and display device using the same | |
JP3325996B2 (en) | Semiconductor device manufacturing method | |
KR100369745B1 (en) | A semiconductor device and a method of producing thereof | |
JP2540688B2 (en) | Semiconductor device and manufacturing method thereof | |
KR100507345B1 (en) | Thin film transistor having ldd structure and flat panel display device using the same | |
KR960011184B1 (en) | Mos field effect semiconductor device | |
JP2006165368A (en) | Apparatus comprising thin film transistor and its manufacturing method | |
Meng et al. | P‐1: Peripherally Crystallized Polycrystalline Silicon (PCP) for Thin‐Film Transistors | |
JP2004228196A (en) | Semiconductor device and its manufacturing method, and electrooptical device | |
TW201904064A (en) | A thin film transistor structure | |
JPH07202212A (en) | Manufacture of thin-film transistor | |
JPH06302615A (en) | Fabrication of semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20090109 Address after: Gyeonggi Do, South Korea Applicant after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do, South Korea Applicant before: Samsung SDI Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20090109 |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MONITOR CO., LTD. Free format text: FORMER OWNER: SAMSUNG MOBILE DISPLAY CO., LTD. Effective date: 20121029 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121029 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Mobile Display Co., Ltd. |