CN100517657C - Sonos快闪存储器的制作方法 - Google Patents
Sonos快闪存储器的制作方法 Download PDFInfo
- Publication number
- CN100517657C CN100517657C CNB2007101265974A CN200710126597A CN100517657C CN 100517657 C CN100517657 C CN 100517657C CN B2007101265974 A CNB2007101265974 A CN B2007101265974A CN 200710126597 A CN200710126597 A CN 200710126597A CN 100517657 C CN100517657 C CN 100517657C
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- hard mask
- mask layer
- polysilicon
- flash memory
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- Non-Volatile Memory (AREA)
Abstract
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Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007101265974A CN100517657C (zh) | 2006-11-28 | 2007-06-22 | Sonos快闪存储器的制作方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200610118820.6 | 2006-11-28 | ||
CN200610118820 | 2006-11-28 | ||
CNB2007101265974A CN100517657C (zh) | 2006-11-28 | 2007-06-22 | Sonos快闪存储器的制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN101192576A CN101192576A (zh) | 2008-06-04 |
CN100517657C true CN100517657C (zh) | 2009-07-22 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2007101265974A Expired - Fee Related CN100517657C (zh) | 2006-11-28 | 2007-06-22 | Sonos快闪存储器的制作方法 |
Country Status (1)
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CN (1) | CN100517657C (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102496566B (zh) * | 2011-11-29 | 2014-08-06 | 无锡中微晶园电子有限公司 | 用于sonos存储芯片批产工艺中的存储管多晶刻蚀方法 |
CN111128713B (zh) * | 2019-12-26 | 2022-07-19 | 华虹半导体(无锡)有限公司 | 一种改善NORD flash单元边界字线多晶硅残留的方法 |
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2007
- 2007-06-22 CN CNB2007101265974A patent/CN100517657C/zh not_active Expired - Fee Related
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Publication number | Publication date |
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CN101192576A (zh) | 2008-06-04 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111116 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090722 Termination date: 20180622 |