CN100517611C - Aluminum cushion layer etching method and bump formation method - Google Patents
Aluminum cushion layer etching method and bump formation method Download PDFInfo
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- CN100517611C CN100517611C CNB2007100410966A CN200710041096A CN100517611C CN 100517611 C CN100517611 C CN 100517611C CN B2007100410966 A CNB2007100410966 A CN B2007100410966A CN 200710041096 A CN200710041096 A CN 200710041096A CN 100517611 C CN100517611 C CN 100517611C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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Abstract
A method for etching an aluminum pad layer comprises providing a semiconductor substrate, forming an aluminum pad layer, a passivating layer and a dielectric layer on the semiconductor substrate, wherein the aluminum layer is inlaid in the passivating layer and exposes through the passivating layer and a first opening of the dielectric layer, and further utilizing argon plasma to etch the aluminum pad layer, wherein the production power (MF) for generating the argon plasma is arranged between 600W and 800W, the accelerating power (RF) for accelerating the argon plasma is arranged between 100W and 600W, and the etching time is arranged between 55s and 100s. The invention further provides a method for forming bumps. Compared with the prior art, the method for etching an aluminum pad layer reduces the generation power (MF) for generating the argon plasma, the accelerating power (RF) for accelerating the argon plasma and the time to etch the aluminum pad layer, thereby avoiding the problem of rough surface of the aluminum pad layer caused by over-etching to the aluminum pad layer in the prior art.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly the formation method of the method for aluminum cushion layer etching and salient point.
Background technology
In the semiconductor integrated circuit backend process, the aluminum cushion layer that the aluminium lamination of last layer patternization forms array is that I/O (I/O) or power supply/ground signalling provide connection; Follow the deposit passivation layer and first dielectric layer on aluminum cushion layer, described passivation layer is such as being polyimides (polyimide), and first dielectric layer is such as being phenylpropyl alcohol cyclic hydrocarbon alkene (BCB); In the passivation layer and first dielectric layer, form first opening then and expose aluminum cushion layer; In first opening, form re-wiring layer then; Form second dielectric layer afterwards on re-wiring layer, second dielectric layer is that relative thicker high molecular polymer (adopting polyimides or phenylpropyl alcohol cyclic hydrocarbon alkene usually) is to provide further insulation and to prevent the contaminated and generation mechanical damage of semiconductor integrated circuit in scribing processes subsequently; On neutralizing second dielectric layer, opening forms ubm layer then, described ubm layer generally forms by plating mode, general adopt a kind of or they constitute among Ti, Ni, the Cu, form second opening then in second dielectric layer, described second opening is salient point position to be formed; At last, forming salient point in second opening, subsequently Semiconductor substrate is carried out scribing, is these small pieces that the salient point of the chip of integrated circuit is connected on the lead frame and encapsulates.
Need aluminum cushion layer is carried out etching so that contaminations such as the oxide on removal aluminum cushion layer surface or residual organic before in actual process, forming re-wiring layer.Prior art disclose a kind of adopt microwave technology produce the plasma etching aluminum cushion layer so that reduce the method for passivation layer surface leakage current, but do not provide scope for the energy and the dosage of plasma etching aluminum cushion layer.
In being 5807787 United States Patent (USP), the patent No. can also find more information relevant with technique scheme.
In existing technology, to produce power (MF) be 800 to 1000W to produce argon plasmas to the method for another kind of aluminum cushion layer etching in order to adopt, and adopting accelerating power (RF) is 600 to 800W argon plasma to be quickened, and etching period is about 100 to 300s.But through discovering, after the employing prior art was carried out etching to aluminum cushion layer, it was very coarse to be formed on the rewiring laminar surface that forms on the aluminum cushion layer subsequently, caused leakage current or contact resistance to increase easily, thereby influenced the OQC yield.
Specifically please refer to accompanying drawing 1A is illustrated, Figure 1A is the micrograph results that forms re-wiring layer on aluminum cushion layer, square frame 10 inner regions are the re-wiring layer on the aluminum cushion layer among Figure 1A, square frame 20 inner regions are the re-wiring layer on first dielectric layer, as can be seen, the rewiring laminar surface on aluminum cushion layer is very coarse.Provide focused ion beam (FIB) result of square frame 10 and square $ frame 20 inner regions respectively as Figure 1B and 1C, by in square frame 11 among Figure 1B and the 1C and the square frame 21 as can be seen, be positioned at re-wiring layer on the aluminum cushion layer with to be positioned at the surface roughness of the re-wiring layer on first dielectric layer obviously inconsistent.Can infer that thus the re-wiring layer on the aluminum cushion layer comparatively coarse is because due to aluminum cushion layer surface coarse.
Summary of the invention
The problem that the present invention solves provides a kind of method and a kind of method that forms semi-convex point of aluminum cushion layer etching, has avoided in the prior art because the over etching aluminum cushion layer causes the re-wiring layer rough surface problem that forms on aluminum cushion layer.
For addressing the above problem, the invention provides a kind of method of aluminum cushion layer etching, comprising: Semiconductor substrate is provided; Form aluminum cushion layer and passivation layer and dielectric layer on Semiconductor substrate, described aluminum cushion layer is embedded in the passivation layer; Form first opening in dielectric layer and passivation layer, described first opening exposes aluminum cushion layer; Adopt the argon plasma etch aluminum cushion layer, the generation power that produces argon plasma is 600 to 800W, and the accelerating power that argon plasma is quickened is 100 to 600W.
Etching period is 55 to 100s.
Described dielectric layer is a benzocyclobutene.
The present invention also provides a kind of formation method of salient point, comprise the steps: a, form aluminum cushion layer and the passivation layer and first dielectric layer on Semiconductor substrate, described aluminum cushion layer is embedded in the passivation layer, form first opening in dielectric layer and passivation layer, described first opening exposes aluminum cushion layer; B adopts the argon plasma etch aluminum cushion layer, and the generation power that produces described argon plasma is 600 to 800W, and the accelerating power that argon plasma is quickened is 100 to 600W; C forms re-wiring layer on the aluminum cushion layer and first dielectric layer; D forms second dielectric layer on re-wiring layer, define the salient point position on second dielectric layer, and etching second dielectric layer forms second opening in the salient point position, exposes re-wiring layer; E forms salient point in second opening.
Etching period is 55 to 100s.
Step c specifically comprises: form first adhesion layer and the first metal layer successively on the aluminum cushion layer and first dielectric layer; Form first photoresist layer on the first metal layer, define the re-wiring layer shape, etching first photoresist layer exposes the first metal layer; With the first metal layer is that seed crystal is electroplated the first metal layer material; Remove first photoresist layer and the re-wiring layer shape the first metal layer and first adhesion layer in addition.
Described the first metal layer is a metallic copper.
Step e specifically comprises: form second adhesion layer and second metal level successively on the sidewall of second opening and the bottom and second dielectric layer; Form second photoresist layer on second metal level, define the salient point shape, etching second photoresist layer exposes second metal level; With second metal level is that seed crystal is electroplated the salient point layer; Form salient point.
Described second metal level is a metallic copper.
First, second dielectric layer is a benzocyclobutene.
Compared with prior art, such scheme has the following advantages: optimize argon plasma etch aluminum cushion layer technology, the generation power (MF) that produces argon plasma is 600 to 800W, the accelerating power (RF) that argon plasma is quickened is 100 to 600W, has avoided in the prior art because the over etching aluminum cushion layer causes aluminum cushion layer rough surface problem.
Such scheme has reduced the time of aluminum cushion layer etching, has further prevented the over etching aluminum cushion layer, has shortened the process time.
Optimize argon plasma etch aluminum cushion layer technology in the such scheme, producing argon plasma, to produce power (MF) be 600 to 800W, the accelerating power (RF) that argon plasma is quickened is 100 to 600W, etching period is 55 to 100s, has avoided because the over etching aluminum cushion layer causes the re-wiring layer rough surface problem that forms on aluminum cushion layer.
Such scheme has further reduced the temperature of whole Semiconductor substrate by reducing the aluminum cushion layer etching time, and the heat budget that this helps reducing the semiconductor device in the Semiconductor substrate has shortened the process time simultaneously.
Description of drawings
Figure 1A is the re-wiring layer micrograph results that prior art forms;
Figure 1B and Fig. 1 C are the focused ion beam results of re-wiring layer difference among Figure 1A;
Fig. 2 A to Fig. 2 C is the structural representation of the aluminum cushion layer etching of one embodiment of the present of invention;
Fig. 3 A to Fig. 3 G is the structural representation of the formation salient point of one embodiment of the present of invention;
Fig. 4 is the SEM result who adopts the first metal layer of the technology of the present invention formation;
Fig. 5 and Fig. 6 are the focused ion beam results of the first metal layer difference among Fig. 4;
Fig. 7 is the micrograph results that adopts the re-wiring layer of the technology of the present invention formation;
Fig. 8 is resistance value and the standard value that adopts the first metal layer on the aluminum cushion layer that the technology of the present invention forms.
Embodiment
The invention provides a kind of method of aluminum cushion layer etching, adopting and producing power (MF) scope is 600 to 800W generation plasmas, accelerating power (RF) scope is that 100 to 600W article on plasma bodies quicken to remove the oxide layer on aluminum cushion layer surface and contamination etc., and the present invention also provides a kind of formation method of salient point.Compared with prior art, the present invention is by reducing generation power (MF) scope that produces plasma and reducing accelerating power (RF) scope that the article on plasma body quickens, reduce influence, reduce the roughness that is formed on the re-wiring layer on the aluminum cushion layer subsequently thereby reach in salient point formation technology to the aluminum cushion layer surface roughness.
The present invention at first provides a kind of method of aluminum cushion layer etching, comprising: Semiconductor substrate is provided; Form aluminum cushion layer and passivation layer and dielectric layer on Semiconductor substrate, described aluminum cushion layer is embedded in the passivation layer, and exposes aluminum cushion layer by first opening of passivation layer and dielectric layer; Using plasma aluminum cushion layer etching, the generation power that produces plasma are 600 to 800W, and the accelerating power that the article on plasma body quickens is 100 to 600W.
With reference to figure 2A to 2C is the structural representation of aluminum cushion layer etching of the present invention.With reference to accompanying drawing 2A, Semiconductor substrate 100 is provided, and described Semiconductor substrate 100 is silicon, the silicon-on-insulator (SOI) that is formed with semiconductor device that is formed with semiconductor device or is II-VI or the III-V compound semiconductor that is formed with semiconductor device.
Be formed with aluminum cushion layer 101 on the described Semiconductor substrate 100, described aluminum cushion layer is as the bonded layer of drawing bonding line.On Semiconductor substrate 100 and aluminum cushion layer 101, be formed with passivation layer 102; described aluminum cushion layer 101 is embedded in the passivation layer 102; described passivation layer 102 is used to protect aluminum cushion layer 101; described passivation layer 102 can be silicon nitride, silica, silicon oxynitride, polyimides (polyimide) etc.; as the execution mode of an optimization of present embodiment, described passivation layer 102 is a polyimides.
Then, form dielectric layer 103 on passivation layer 102, described dielectric layer 103 can be phenylpropyl alcohol cyclic hydrocarbon alkene (BCB).
With reference to accompanying drawing 2B, in dielectric layer 103 and passivation layer 102, form first opening 201, form first opening 201 and be present technique field personnel's known technology.Described first opening 201 exposes aluminum cushion layer 101.
With reference to accompanying drawing 2C, adopt argon plasma 104 aluminum cushion layer etchings 101.The generation power (MF) that produces described argon plasma 104 is 600 to 800W, and the accelerating power (RF) that argon plasma 104 is quickened is 100 to 600W.Described being etched in the reactive ion etching device carried out.
As an execution mode of present embodiment, the generation power (MF) that produces described argon plasma 104 is 650W, and the accelerating power (RF) that argon plasma is quickened is 200W, and etching period is 55 to 100s.
As another execution mode of present embodiment, the generation power (MF) that produces described argon plasma 104 is 700W, and the accelerating power (RF) that argon plasma is quickened is 300W, and etching period is 55 to 100s.
Adopt the technology of the present invention to optimize plasma etching aluminum cushion layer technology, the accelerating power (RF) of be 800 to 1000W with the generation power (MF) of the described argon plasma 104 of the generation of prior art, the article on plasma body quickening is 600 to 800W to compare, the accelerating power (RF) of produce argon plasma generation power (MF), argon plasma being quickened all decreases, and has avoided in the prior art because the over etching aluminum cushion layer causes aluminum cushion layer rough surface problem.The time that present embodiment adopts the argon plasma etch aluminum cushion layer is reduced to 55 to 100s by original 100 to 300s, under the situation of removing aluminum cushion layer surface oxide layer and contamination fully, further prevents the over etching aluminum cushion layer, has shortened the process time simultaneously.
The present invention gives a kind of formation method embodiment of salient point, comprises the steps: a, forms the aluminum cushion layer and first passivation layer on Semiconductor substrate, and described aluminum cushion layer is embedded in the passivation layer, and exposes aluminum cushion layer by first opening of first passivation layer; B, using plasma aluminum cushion layer etching, the generation power (MF) that produces plasma are 600 to 800W, and the accelerating power (RF) that the article on plasma body quickens is 100 to 600W; C forms re-wiring layer on the aluminum cushion layer and first passivation layer; D forms second dielectric layer on re-wiring layer, define the salient point position on second dielectric layer, and etching second dielectric layer forms second opening in the salient point position, exposes re-wiring layer; E forms salient point in second opening.
Continuation is referring to figs. 2A to 2C, on Semiconductor substrate 100, form aluminum cushion layer 101 and the passivation layer 102 and first dielectric layer 103, described aluminum cushion layer 101 is embedded in the passivation layer 102, and exposes aluminum cushion layer by first opening 201 of the passivation layer 102 and first dielectric layer 103.
Then, adopt argon plasma 104 aluminum cushion layer etchings 101, the generation power (MF) that produces argon plasma 104 is 600 to 800W, and the accelerating power (RF) that argon plasma 1014 is quickened is 100 to 600W.Described being etched in the reactive ion etching device carried out.
As an execution mode of present embodiment, the generation power (MF) that produces described argon plasma 104 is 750W, and the accelerating power (RF) that argon plasma is quickened is 400W, and etching period is 55 to 100s.
As another execution mode of present embodiment, the generation power (MF) that produces described argon plasma 104 is 780W, and the accelerating power (RF) that argon plasma is quickened is 500W, and etching period is 55 to 100s.
3A behind the aluminum cushion layer etching 101, forms first adhesion layer 105 and the first metal layer 106 successively on the aluminum cushion layer 101 and first dielectric layer 103 with reference to the accompanying drawings; Described first adhesion layer 105 is Titanium, chromium etc., and described the first metal layer 106 is a metallic copper, forms described first adhesion layer, 105 purposes for increasing the adhesive force between the first metal layer 106 and the aluminum cushion layer 101.
3B forms first photoresist layer 107 on the first metal layer 106 with reference to the accompanying drawings, defines the re-wiring layer shape, and etching first photoresist layer 107 exposes the first metal layer 106; Be that seed crystal is electroplated the first metal layer material formation the first metal layer 106a with the first metal layer 106 then.
3C with reference to the accompanying drawings, remove first photoresist layer 107 and the re-wiring layer 108 shapes the first metal layer 106 and first adhesion layer 105 in addition, described the first metal layer 106a, remaining the first metal layer 106 and first adhesion layer, the 105 common re-wiring layers 108 of forming.Remove described first photoresist layer 107 and the re-wiring layer 108 shapes the first metal layer 106 and first adhesion layer 105 in addition and be present technique field personnel's known technology.
3D forms second dielectric layer 109 on re-wiring layer 108 with reference to the accompanying drawings, and described second dielectric layer 109 is a phenylpropyl alcohol cyclic hydrocarbon alkene (BCB).
3E defines the salient point position on second dielectric layer 109 with reference to the accompanying drawings, and etching second dielectric layer 109 forms second opening 202 in the salient point position, exposes re-wiring layer 108.
3F with reference to the accompanying drawings forms second adhesion layer 110 and second metal level 111 successively on the sidewall of second opening 202 and the bottom and second dielectric layer 109.Form described second adhesion layer, 110 purposes for increasing the adhesive force between second metal level 111 and the re-wiring layer 108, described second adhesion layer 110 can be Titanium or crome metal.
Then, form second photoresist layer 113 on second metal level 111, define the salient point shape, etching second photoresist layer 113 exposes second metal level 111; With second metal level 111 is that seed crystal is electroplated salient point layer 114.
With reference to accompanying drawing 3G, on salient point layer 114, form the coating scaling powder, insulation refluxes in reflow ovens then, forms salient point 112.
The present invention is by optimizing plasma etching aluminum cushion layer technology, the generation power (MF) that produces plasma is 600 to 800W, the accelerating power (RF) that the article on plasma body quickens is 100 to 600W, has avoided because the over etching aluminum cushion layer causes the re-wiring layer rough surface problem that forms on aluminum cushion layer.
The present invention has reduced the generation power (MF) that produces plasma, has reduced the frequency on plasma bombardment aluminum cushion layer surface; Simultaneously, reduce the accelerating power (RF) that the article on plasma body quickens, reduced the kinetic energy of plasma, therefore reduced whole Semiconductor substrate temperature in the aluminum cushion layer etching technology, prevented that aluminum cushion layer from producing stress under higher temperature, when stress is enough big, be easy to generate the crack.
The present invention is 55 to 100s by adopting etching period also, compared with prior art, reduce the aluminum cushion layer etching time, further reduced the temperature of whole Semiconductor substrate, the heat budget that this helps reducing the semiconductor device in the Semiconductor substrate has shortened the process time simultaneously.
Provide electronic scanner microscope (SEM) result of the first metal layer that adopts the technology of the present invention formation with reference to accompanying drawing 4, comprise on the described the first metal layer and be positioned at top, aluminum cushion layer position 31 and be positioned at the first dielectric layer top 32, as can be seen from Figure 4, the first metal layer surface is very smooth.
Provide the focused ion beam result who is positioned at the first metal layer part 31 on the aluminum cushion layer position among Fig. 4 with reference to accompanying drawing 5, its any regional area is as shown in the square frame among Fig. 5 310.Fig. 6 provides and is positioned at the first metal layer part 32 on first dielectric layer, its any regional area is as shown in the square frame among Fig. 6 320, described focused ion beam equipment is the CLN300 model of Switzerland Unaxis company, as can be seen, the first metal layer and square frame 320 interior the first metal layer roughness are suitable substantially in the square frame 310.
Simultaneously, Fig. 7 provides the micrograph results after the re-wiring layer that adopts the technology of the present invention to form is promptly electroplated first metal material, with comparing among Figure 1A of the prior art, adopts aluminum cushion layer etching technology of the present invention, the rewiring laminar surface of Xing Chenging smoother still subsequently, roughness is less.
Fig. 8 provides the resistance value and the standard value of the first metal layer on the aluminum cushion layer that adopts the technology of the present invention formation.Standard value is the first metal layer standard electric resistance that can accept in the field of business of aluminum cushion layer among the figure, promptly be about 242.5 milliohms, I, II, III are 600W at generation power (MF) among the figure, accelerating power is 100W, etching period is respectively the resistance value of the re-wiring layer that forms on the aluminum cushion layer behind the aluminum cushion layer etching under 100s, 55s, the 75s condition, all is about 237.5 milliohms.As seen from Figure 8, adopt the resistance value of the first metal layer on the aluminum cushion layer that the technology of the present invention forms to compare to float little, the present invention optimizes does not have the re-wiring layer that deterioration forms thereafter after the aluminum cushion layer etching technology on aluminum cushion layer resistance value be described with standard value.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (8)
1. the method for an aluminum cushion layer etching is characterized in that, comprising:
Semiconductor substrate is provided;
Form aluminum cushion layer and passivation layer and dielectric layer on Semiconductor substrate, described aluminum cushion layer is embedded in the passivation layer, and described dielectric layer is positioned on the passivation layer;
Form first opening in dielectric layer and passivation layer, described first opening exposes aluminum cushion layer; Adopt the argon plasma etch aluminum cushion layer, the generation power that produces argon plasma is 600 to 780W, and the accelerating power that argon plasma is quickened is 100 to 500W, and etching period is 55 to 100s.
2. according to the method for the described aluminum cushion layer etching of claim 1, it is characterized in that described dielectric layer is a benzocyclobutene.
3. the formation method of a salient point is characterized in that, comprises the steps
A forms aluminum cushion layer and the passivation layer and first dielectric layer on Semiconductor substrate, described aluminum cushion layer is embedded in the passivation layer, and described dielectric layer is positioned on the passivation layer, and forms first opening in dielectric layer and passivation layer, and described first opening exposes aluminum cushion layer;
B adopts the argon plasma etch aluminum cushion layer, and the generation power that produces described argon plasma is 600 to 780W, and the accelerating power that argon plasma is quickened is 100 to 500W, and etching period is 55 to 100s;
C forms re-wiring layer on the aluminum cushion layer and first dielectric layer;
D forms second dielectric layer on re-wiring layer, define the salient point position on second dielectric layer, and etching second dielectric layer forms second opening in the salient point position, exposes re-wiring layer;
E forms salient point in second opening.
4. according to the formation method of the described salient point of claim 3, it is characterized in that step c specifically comprises:
On the aluminum cushion layer and first dielectric layer, form first adhesion layer and the first metal layer successively;
Form first photoresist layer on the first metal layer, define the re-wiring layer shape, etching first photoresist layer exposes the first metal layer;
With the first metal layer is that seed crystal is electroplated the first metal layer material;
Remove first photoresist layer and the re-wiring layer shape the first metal layer and first adhesion layer in addition.
5. according to the formation method of the described salient point of claim 4, it is characterized in that described the first metal layer is a metallic copper.
6. according to the formation method of the described salient point of claim 3, it is characterized in that step e specifically comprises:
On the sidewall of second opening and the bottom and second dielectric layer, form second adhesion layer and second metal level successively;
Form second photoresist layer on second metal level, define the salient point shape, etching second photoresist layer exposes second metal level;
With second metal level is that seed crystal is electroplated the salient point layer;
Form salient point.
7. according to the formation method of the described salient point of claim 6, it is characterized in that described second metal level is a metallic copper.
8. according to the formation method of the described salient point of claim 3, it is characterized in that first, second dielectric layer is a benzocyclobutene.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2007100410966A CN100517611C (en) | 2007-05-23 | 2007-05-23 | Aluminum cushion layer etching method and bump formation method |
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| CNB2007100410966A CN100517611C (en) | 2007-05-23 | 2007-05-23 | Aluminum cushion layer etching method and bump formation method |
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| CN100517611C true CN100517611C (en) | 2009-07-22 |
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| CN101958272B (en) * | 2009-07-14 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | Aluminum wire forming method |
| CN103165413B (en) * | 2011-12-16 | 2016-03-30 | 北大方正集团有限公司 | A kind of method removing cull |
| CN103258726B (en) * | 2013-03-25 | 2016-01-06 | 北京京东方光电科技有限公司 | The method, array base palte and preparation method thereof of thin film surface planarization and display unit |
| CN109712897B (en) * | 2017-10-26 | 2020-12-18 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, manufacturing method thereof and electronic device |
| CN111162007B (en) * | 2018-11-08 | 2022-04-12 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and method for manufacturing the same |
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