CN101958272B - Aluminum wire forming method - Google Patents
Aluminum wire forming method Download PDFInfo
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- CN101958272B CN101958272B CN2009100547987A CN200910054798A CN101958272B CN 101958272 B CN101958272 B CN 101958272B CN 2009100547987 A CN2009100547987 A CN 2009100547987A CN 200910054798 A CN200910054798 A CN 200910054798A CN 101958272 B CN101958272 B CN 101958272B
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Abstract
The invention discloses an aluminum wire forming method, comprising the steps of: providing a substrate and depositing an aluminum metal layer on the substrate; spin-coating photoresist (PR) on the aluminum metal layer; exposing and developing the PR to form a PR image; and taking the PR as a mask to carry out dry etching, wherein the dry etching comprises a main etching process and an over etching process, a bias power of an etching device in the main etching process is adjusted to a power capable of ensuring that the PR can paste a polymer on a quartz cover plate, and a conversion coupling power and the bias power of the etching device in the over etching process are respectively adjusted to the power capable of ensuring that the PR can paste the polymer on the quartz cover plate, and the quartz cover plate is an insulation plate for isolating an inductance coil and a wafer in the etching device. The application of the method can improve the yield of the aluminum wires.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of aluminum steel formation method.
Background technology
Along with the extensive use of electronic equipment, semi-conductive manufacturing process has obtained development at full speed, and semi-conductive manufacturing process relates to aluminum steel and forms technology.Fig. 1 is the flow chart of aluminum steel formation method in the prior art, and is as shown in Figure 1, and this method may further comprise the steps:
Dry etching is to make etching gas and metallic aluminium generation chemistry or physical reactions, thereby on aluminum metal layer, forms aluminum steel according to reticle pattern, and simultaneously, etching gas also can be peeled off the PR on aluminum metal layer surface.
In practical application, dry etching is divided into two operations again: main etching and etching excessively, for the metal between the adjacent aluminum steel; The etched speed of the metal far away more apart from the aluminum steel edge is fast more, that is to say, the mid portion of the metal between the adjacent aluminum steel is faster than the partially-etched speed in the both sides of metal; In order to guarantee that the metal nearer apart from the aluminum steel edge also can be by etching fully; Therefore after main etching work procedure, also need carry out and be etched in operation, but need to prove, the main etching device that etching is adopted with mistake is identical; What all adopt is the dry etching device; The parameter that is adopted when being etching is had any different, and etching gas is all peeled off PR in main etching and overetched process, below in conjunction with the device of dry etching main etching and the parameter that is etched in the practical application is excessively introduced.
Fig. 2 is the sectional structure chart of dry etching device in the prior art.As shown in Figure 2; On inductance coil 202, apply the conversion coupled power through conversion coupled power generator 201; Thereby around inductance coil 202, generate an electromagnetic field, when aluminum steel was carried out main etching, the conversion coupled power was generally 720W～880W; When aluminum steel was carried out etching, the conversion coupled power was generally 405W～495W; Etching gas is passed into the upper chamber 204 from air inlet 203 then, and when aluminum steel was carried out main etching, etching gas was boron chloride (BCl
3), fluoroform (CHF
3) and chlorine (Cl
2) mist, wherein, BCl
3Flow be 81sccm～99sccm, CHF
3Flow be 36sccm～44sccm, Cl
2Flow be 182sccm～198sccm, when aluminum steel was carried out etching, etching gas was BCl
3And Cl
2Mist, and BCl
3And Cl
2Flow all with main etching work procedure in flow identical; Ionization takes place and forms plasma in etching gas under the effect of electromagnetic field; Quartz changes plate 205 keeps apart inductance coil 202 with the wafer W that is positioned on the electrostatic chuck 206; Because it is an insulation board that quartz changes plate 205; So just can weaken the influence of electromagnetic field to wafer W, quartz changes plate 205 and also comprises several circular holes, is used for making the ionization base of plasma to get into lower cavity 207; Simultaneously; On wafer W, apply bias power through bias power generator 208, so just make to have a bigger voltage difference between wafer W and the plasma, thereby make the ionization base of ultra wafer W motion have directivity; When aluminum steel is carried out main etching; Bias power is generally 108W～132W, and when aluminum steel was carried out etching, bias power was generally 99W～121W.
Yet; In above-mentioned steps 104; When aluminum steel being carried out main etching and crossing etching, etching gas and metallic aluminium generation chemical reaction and the party thing that generates can be deposited on quartz gradually and change on the plate, along with the carrying out of subsequent etch; Be deposited on quartz and change polymer on the plate, reduced the yield of aluminum steel because the effect of gravity just is easy to drop on etched aluminum steel.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of aluminum steel formation method, can improve the yield of aluminum steel.
For achieving the above object, technical scheme of the present invention specifically is achieved in that
A kind of aluminum steel formation method comprises: a substrate is provided, deposition of aluminum metal level in this substrate; Spin coating photoresist PR on aluminum metal layer; To PR exposure, development; Forming the PR figure, is mask with said PR, carries out dry etching; Said dry etching comprises main etching work procedure and crosses etching work procedure, and the bias power of Etaching device is adjusted to and can makes PR that polymer is sticked on quartz to change the power on the plate in the main etching work procedure; Conversion coupled power and the bias power of crossing Etaching device in the etching work procedure is adjusted to respectively and can makes PR that polymer is sticked on quartz to change the power on the plate, and said quartz changes plate in Etaching device, isolating the insulation board of inductance coil and wafer;
In main etching work procedure, the conversion coupled power is 720W～880W, and bias power is 315W～385W;
And in crossing etching work procedure, the conversion coupled power is 720W～880W, and bias power is 315W～385W.
This method further comprises: fluoroform CHF in the etching gas of said main etching work procedure
3Flow be zero, and CHF in the said etching gas of crossing etching work procedure
3Flow be zero.
Thus it is clear that, in method provided by the present invention, in main etching work procedure, increase bias power; And in crossing etching work procedure, increase conversion coupled power and bias power; Thereby can increase the detachment rate of PR, make more PR stick on quartz and change on the plate, the PR with viscosity also sticks on quartz with polymer and changes on the plate; So just can avoid polymer just to drop on etched aluminum steel, improve the yield of aluminum steel.
Description of drawings
Fig. 1 is the flow chart of aluminum steel formation method in the prior art.
Fig. 2 is the sectional structure chart of dry etching device in the prior art.
Fig. 3 is the flow chart of aluminum steel formation method provided by the present invention.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, to further explain of the present invention.
Core concept of the present invention is: when aluminum steel was carried out etching, the PR on metallic aluminium surface can peel off gradually, because PR is a kind of material with viscosity; PR can stick on quartz and change on the plate, in the present invention, and through increasing conversion coupled power and/or bias power; To reach the purpose of the detachment rate that increases PR; Change on the plate thereby make more PR stick on quartz, the PR with viscosity can also stick on quartz with polymer firmly and change on the plate, so just can avoid dropping of polymer.
Fig. 3 is the flow chart of aluminum steel formation method provided by the present invention, and this method may further comprise the steps:
Above step is the content of prior art, does not repeat them here.
After PR exposure, development and forming the PR figure, be mask with PR, carry out dry etching, and dry etching comprises main etching work procedure and crosses etching work procedure.
In actual applications; Increase the concentration that the conversion coupled power can improve ionization base in the plasma; Help improving the detachment rate of PR; Simultaneously; Increase the voltage difference that bias power can improve wafer and plasma; Thereby improve the speed of the ultra wafer movement of ionization base; So also help improving the detachment rate of PR; Therefore, in main etching in dry etching and the mistake etching work procedure, can be by increasing the detachment rate that conversion coupled power and/or bias power improve PR; But; Need to prove that the increase of conversion coupled power and/or bias power is not arbitrarily yet, also must be in conjunction with the ability to bear of the dry etching equipment in the practical application.
In main etching work procedure; Conversion coupled power of the prior art is 720W～880W, and the dry etching equipment in practical application, conversion coupled power of the prior art is enough high; Still can to keep changing the numerical value of coupled power constant; Increase bias power simultaneously, can know, when bias power is adjusted to 315W～385W according to experiment; The PR that is peeled off in the main etching work procedure can stick on quartz with most polymer and change on the plate; So just avoided polymer when main etching work procedure, to drop, and when the conversion coupled power in the main etching work procedure and bias power were in above-mentioned scope, conversion coupled power and bias power were within the ability to bear of equipment just on etched aluminum steel.
In crossing etching work procedure; Because conversion coupled power of the prior art and bias power all are not very high; Still can increase conversion coupled power and bias power simultaneously, can know that according to experiment the conversion coupled power in main etching work procedure is that 720W～880W, bias power are adjusted under the prerequisite of 315W～385W; The conversion coupled power of crossing in the etching work procedure is adjusted to 720W～880W; And when bias power is adjusted to 315W～385W, crosses the PR that is peeled off in the etching work procedure and can most polymer be sticked on quartz and change on the plate, avoid polymer when crossing etching work procedure, to drop just on etched aluminum steel; And served as conversion coupled power and bias power in the etching work procedure in above-mentioned scope the time, conversion coupled power and bias power are within the ability to bear of equipment.
In addition, need to prove also that etching gas of the prior art comprises CHF
3, and CHF
3In fluorine ion be easy to and chemical reaction takes place PR; And PR is lost activity; So just make the PR forfeiture viscosity of being peeled off, the PR of forfeiture viscosity can't stick on quartz with polymer and change on the plate, even the PR that is peeled off changes on the plate owing to sticking on quartz; Just can drop to again again on etched aluminum steel, so also can influence the yield of aluminum steel.
Therefore, we can be with CHF in the etching gas
3Flow be adjusted to zero, and the flow of other etching gass is identical with prior art in main etching and the mistake etching work procedure.
It is thus clear that, in the present invention, in main etching work procedure, increase bias power, and in crossing etching work procedure, increase conversion coupled power and bias power, thereby can increase the detachment rate of PR, simultaneously, with CHF in the etching gas
3Flow be adjusted to zero, like this, the PR with viscosity can stick on quartz with polymer and change on the plate, thereby avoids polymer just to drop on etched aluminum steel, has improved the yield of aluminum steel.
The above is merely preferred embodiment of the present invention, is not to be used to limit protection scope of the present invention.All within spirit of the present invention and principle, any modification of being done, be equal to replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. an aluminum steel formation method comprises: a substrate is provided, deposition of aluminum metal level in this substrate; Spin coating photoresist PR on aluminum metal layer; To PR exposure, development; Form the PR figure; With said PR is mask, carries out dry etching, and said dry etching comprises main etching work procedure and crosses etching work procedure; It is characterized in that the bias power of Etaching device is adjusted to and can makes PR that polymer is sticked on quartz to change the power on the plate in the main etching work procedure; Conversion coupled power and the bias power of crossing Etaching device in the etching work procedure is adjusted to respectively and can makes PR that polymer is sticked on quartz to change the power on the plate, and said quartz changes plate in Etaching device, isolating the insulation board of inductance coil and wafer;
In main etching work procedure, the conversion coupled power is 720W～880W, and bias power is 315W～385W;
And in crossing etching work procedure, the conversion coupled power is 720W～880W, and bias power is 315W～385W.
2. method according to claim 1 is characterized in that, this method further comprises: fluoroform CHF in the etching gas of said main etching work procedure
3Flow be zero, and CHF in the said etching gas of crossing etching work procedure
3Flow be zero.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100547987A CN101958272B (en) | 2009-07-14 | 2009-07-14 | Aluminum wire forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100547987A CN101958272B (en) | 2009-07-14 | 2009-07-14 | Aluminum wire forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101958272A CN101958272A (en) | 2011-01-26 |
| CN101958272B true CN101958272B (en) | 2012-07-25 |
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ID=43485530
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100547987A Expired - Fee Related CN101958272B (en) | 2009-07-14 | 2009-07-14 | Aluminum wire forming method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101958272B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6255226B1 (en) * | 1998-12-01 | 2001-07-03 | Philips Semiconductor, Inc. | Optimized metal etch process to enable the use of aluminum plugs |
| CN101312130A (en) * | 2007-05-23 | 2008-11-26 | 中芯国际集成电路制造(上海)有限公司 | Aluminum cushion layer etching method and bump formation method |
-
2009
- 2009-07-14 CN CN2009100547987A patent/CN101958272B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6255226B1 (en) * | 1998-12-01 | 2001-07-03 | Philips Semiconductor, Inc. | Optimized metal etch process to enable the use of aluminum plugs |
| CN101312130A (en) * | 2007-05-23 | 2008-11-26 | 中芯国际集成电路制造(上海)有限公司 | Aluminum cushion layer etching method and bump formation method |
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|---|---|
| CN101958272A (en) | 2011-01-26 |
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