CN100514848C - 宽带高频线性放大器及集成电路芯片 - Google Patents

宽带高频线性放大器及集成电路芯片 Download PDF

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Publication number
CN100514848C
CN100514848C CNB028232909A CN02823290A CN100514848C CN 100514848 C CN100514848 C CN 100514848C CN B028232909 A CNB028232909 A CN B028232909A CN 02823290 A CN02823290 A CN 02823290A CN 100514848 C CN100514848 C CN 100514848C
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CN
China
Prior art keywords
amplifier
output
fet
input
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028232909A
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English (en)
Chinese (zh)
Other versions
CN1636317A (zh
Inventor
劳伦斯·E·康奈尔
尼尔·W·霍伦贝克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1636317A publication Critical patent/CN1636317A/zh
Application granted granted Critical
Publication of CN100514848C publication Critical patent/CN100514848C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0023—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements in emitter-coupled or cascode amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/72—Indexing scheme relating to amplifiers the amplifier stage being a common gate configuration MOSFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
CNB028232909A 2001-10-25 2002-10-04 宽带高频线性放大器及集成电路芯片 Expired - Fee Related CN100514848C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/001,388 US6621348B2 (en) 2001-10-25 2001-10-25 Variable gain amplifier with autobiasing supply regulation
US10/001,388 2001-10-25

Publications (2)

Publication Number Publication Date
CN1636317A CN1636317A (zh) 2005-07-06
CN100514848C true CN100514848C (zh) 2009-07-15

Family

ID=21695789

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028232909A Expired - Fee Related CN100514848C (zh) 2001-10-25 2002-10-04 宽带高频线性放大器及集成电路芯片

Country Status (7)

Country Link
US (1) US6621348B2 (enExample)
EP (1) EP1523804A4 (enExample)
JP (1) JP4401776B2 (enExample)
KR (1) KR100979896B1 (enExample)
CN (1) CN100514848C (enExample)
TW (1) TW582137B (enExample)
WO (1) WO2003036790A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7113033B2 (en) * 2002-01-31 2006-09-26 Qualcomm Incorporated Variable impedance load for a variable gain radio frequency amplifier
US7622845B2 (en) * 2003-03-31 2009-11-24 Suren Systems, Ltd. Piezoelectric transducer signal processing circuit
TWI299613B (en) 2005-10-21 2008-08-01 Via Tech Inc Variable-gain amplifier and related method
KR100648380B1 (ko) * 2005-12-12 2006-11-24 한국전자통신연구원 가변 이득 증폭기
KR100732070B1 (ko) * 2007-03-07 2007-06-27 (주)에프씨아이 이득을 가변시킬 수 있는 저 잡음 증폭기
KR101719387B1 (ko) * 2009-08-17 2017-03-23 스카이워크스 솔루션즈, 인코포레이티드 선형화 전치 보상기를 갖는 라디오 주파수 전력 증폭기
US10014829B2 (en) * 2015-12-23 2018-07-03 Omni Design Technologies, Inc. Non-inverting amplifier circuits
EP3503389B1 (en) * 2017-12-21 2024-03-13 IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik Output common mode voltage regulated variable gain amplifier
CN112436851B (zh) * 2020-07-21 2022-04-01 珠海市杰理科技股份有限公司 检测电路及检测方法、无线射频接收机、芯片、电器设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1183180A (zh) * 1995-05-03 1998-05-27 摩托罗拉公司 低压差分放大器
CN1217607A (zh) * 1997-10-28 1999-05-26 皇家菲利浦电子有限公司 具有有限输出动态范围的高增益放大器
US6046640A (en) * 1997-11-07 2000-04-04 Analog Devices, Inc. Switched-gain cascode amplifier using loading network for gain control

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4105945A (en) * 1976-03-16 1978-08-08 Matsushita Electric Industrial Co., Ltd. Active load circuits
JPS6069903A (ja) * 1983-09-26 1985-04-20 Sumitomo Electric Ind Ltd 増幅回路
JP2542311Y2 (ja) * 1990-07-13 1997-07-23 日置電機株式会社 電圧検出器
JPH04108205A (ja) * 1990-08-28 1992-04-09 Matsushita Electric Ind Co Ltd 低周波増幅器
JPH0865056A (ja) * 1994-08-19 1996-03-08 Yokogawa Electric Corp アナログ信号出力回路
JPH0964651A (ja) * 1995-08-30 1997-03-07 Hitachi Ltd 電子回路
US6163235A (en) * 1998-09-01 2000-12-19 Ericsson Inc. Active load circuit with low impedance output
US6943618B1 (en) 1999-05-13 2005-09-13 Honeywell International Inc. Compensation mechanism for compensating bias levels of an operation circuit in response to supply voltage changes
US6316996B1 (en) * 1999-10-25 2001-11-13 Nokia Mobile Phones, Ltd. Adjustable AC load structure
US6424222B1 (en) * 2001-03-29 2002-07-23 Gct Semiconductor, Inc. Variable gain low noise amplifier for a wireless terminal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1183180A (zh) * 1995-05-03 1998-05-27 摩托罗拉公司 低压差分放大器
CN1217607A (zh) * 1997-10-28 1999-05-26 皇家菲利浦电子有限公司 具有有限输出动态范围的高增益放大器
US6046640A (en) * 1997-11-07 2000-04-04 Analog Devices, Inc. Switched-gain cascode amplifier using loading network for gain control

Also Published As

Publication number Publication date
WO2003036790A3 (en) 2003-06-05
KR20040049002A (ko) 2004-06-10
JP2005507202A (ja) 2005-03-10
KR100979896B1 (ko) 2010-09-06
CN1636317A (zh) 2005-07-06
WO2003036790A2 (en) 2003-05-01
US6621348B2 (en) 2003-09-16
TW582137B (en) 2004-04-01
EP1523804A4 (en) 2008-07-16
US20030085764A1 (en) 2003-05-08
EP1523804A2 (en) 2005-04-20
JP4401776B2 (ja) 2010-01-20

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: FISICAL SEMICONDUCTOR INC.

Free format text: FORMER NAME: FREEDOM SEMICONDUCTOR CORP.

CP01 Change in the name or title of a patent holder

Address after: Texas in the United States

Patentee after: FREESCALE SEMICONDUCTOR, Inc.

Address before: Texas in the United States

Patentee before: FreeScale Semiconductor

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090715

Termination date: 20191004

CF01 Termination of patent right due to non-payment of annual fee