CN100511693C - Radiation detecting apparatus, radiation imaging apparatus and radiation imaging system - Google Patents

Abstract

A radiation detecting apparatus according to the present invention includes: pixels including switching elements arranged on an insulating substrate and conversion elements arranged on the switching elements to convert a radiation into electric carriers, the switching elements and the conversion elements are connected with each other, the pixels two-dimensionally arranged on the insulating substrate in a matrix; gate wiring commonly connected with a plurality of switching elements arranged in a row direction on the insulating substrate; signal wiring commonly connected with a plurality of switching elements arranged in a column direction; and a plurality of insulating films arranged between the switching elements and the conversion elements, wherein at least one of the gate wiring and the signal wiring is arranged to be put between the plurality of insulating films.

Description

Radiation detecting apparatus, radiation imaging apparatus and radiation image-forming system

Technical field

The present invention relates to a kind of radiation detecting apparatus, this radiation detecting apparatus comprises in pixel and radiation or light is converted to the conversion element of electric charge carrier and as the thin-film transistor (TFT) of switch element.

Background technology

Radiation detecting apparatus is especially suitable for use as the radiation detecting apparatus that detects radiation, and as medical diagnostic equipment, nondestructive inspection (NDI) equipment with use the analytical equipment etc. of radiation.Therefore, the alpha ray of the wave beam that in this manual, suppose visible light etc., is produced as particle (comprising photon), β ray, gamma-rays etc. and have and all be included in the radiation such as the wave beam of the energy of the energy same intensity of particles such as X ray, particulate ray, cosmic ray by the radioactive decay emission.

Nearest following aspect is advanced rapidly: on dielectric substrate, formed TFT the TFT matrix display panel size increase and to the acceleration of the actuating speed of TFT matrix display panel.The manufacturing technology of the LCD panel of use TFT is used to comprise the face sensor (for example, radiation detecting apparatus) of semiconductor conversion element, and each semiconductor conversion element will be converted to the signal of telecommunication such as the radiation of X ray.As this semiconductor conversion element, for example, have and a kind ofly (for example be provided with wavelength conversion layer, luminescent coating) semiconductor conversion element, this wavelength conversion layer is carried out on the surface of semiconductor conversion element from changing to carry out the opto-electronic conversion of light such as being radiated such as the light wavelength of visible light of X ray, uses the semiconductor conversion element of the semiconductor transition material of carrying out the direct conversion that is radiated the signal of telecommunication etc. in addition.

On substrate, be provided with this semiconductor conversion element two-dimensionally and from semiconductor conversion element, read the signal of telecommunication, on this substrate, detect amount of radiation that shines each pixel or the light quantity of changing from radiation to read the TFT of radiation irradiation amount.Though can provide super-sensitive radiation detecting apparatus by detecting more exposure, for this purpose need be by using whole space that semiconductor conversion element is set effectively in the performance that keeps TFT.

Therefore, in prior art, proposed such scheme: after having formed tft array, semiconductor conversion element is layered on the tft array to prevent the aperture ratio loss that TFT causes and to have improved sensitivity.As the example, Japanese Patent Application Publication has been described semiconductor conversion element 2004-15002 number and has been set on the TFT.

Complanation layer is formed on the source electrode and drain electrode of TFT, and semiconductor conversion element is formed on the complanation layer.Complanation layer the capacitive couplings that has reduced between TFT and semiconductor conversion element is provided, therefore may in TFT and each wiring, form semiconductor conversion element.By adopting this structure, improved the aperture ratio of semiconductor conversion element.

Summary of the invention

Yet,, therefore need from semiconductor conversion element, accurately read small signal because for example in the very little zone of the exposure of radiation, carry out radiography with the mobile image rays camera sensor of radiation detecting apparatus.Thereby, the S/N ratio of the further rising radiation detecting apparatus of needs.It is realized in the following way: the sensitivity of semiconductor conversion element is compared and is strengthened in the aperture of for example using complanation layer and providing semiconductor conversion element to strengthen semiconductor conversion element on complanation layer.Therefore, need further reduce noise to improve the S/N ratio.For this reason, require to reduce the electric capacity of signal routing and grid wiring.

The present invention relates in radiation detecting apparatus, improve sensitivity and reduce noise by the parasitic capacitance that reduces between signal routing and grid wiring, this radiation detecting apparatus is provided with pixel two-dimensionally, each pixel is made of a pair of conversion element and switch element, and this conversion element is with light or do not comprise that the radiation of light is converted to electric charge carrier.In addition, the objective of the invention is to improve sensitivity and reduce noise by the parasitic capacitance that reduces between conversion element and wiring.In addition, even the invention provides a kind of switching device that still can obtain the high S/N ratio of preferable image when the level of incident radiation or incident light is low under the radiographic X situation of high speed of the mobile image of carrying out high-speed driving.

For solving the above problems, radiation detecting apparatus according to the present invention comprises: the pixel that comprises switch element and conversion element, said switch element is arranged on the dielectric substrate, said conversion element is arranged on the said switch element radiation is converted to electric charge carrier, wherein said switch element and said conversion element are connected to each other, and said pixel is arranged on the said dielectric substrate two-dimensionally in the mode of matrix; The grid wiring that is connected with each switch element in the line direction setting of said dielectric substrate upper edge publicly; The signal routing that is connected with each switch element along the column direction setting publicly; And being arranged on a plurality of dielectric films between said switch element and the said conversion element, at least one in wherein said grid wiring and the said signal routing is configured to place between said a plurality of dielectric film.

In addition, in this manual, the conversion element that radiation is converted to electric charge carrier means that reception is such as light such as visible light, infrared light and the element that is converted to electric charge carrier such as radiation such as X ray, alpha ray, β ray, gamma-rays with light that will be received and the radiation that is received.Conversion element comprises and will be converted to the photo-electric conversion element of electric charge carrier such as light such as visible light, infrared lights and will directly be converted to the element of electric charge carrier such as radiation such as X ray by what make as amorphous selenium of semiconductor layer etc.

From hereinafter knowing other features and advantages of the present invention the description taken together with the accompanying drawings, similar in the accompanying drawings reference symbol is represented same or analogous parts in whole accompanying drawing.

Description of drawings

Be incorporated in the specification and as an illustration the part of book description of drawings embodiments of the invention, and be used from together with following description one and explain principle of the present invention.

Accompanying drawing 1 is depicted as the plan view according to the pixel of the radiation detecting apparatus of the first embodiment of the present invention.

Accompanying drawing 2 is depicted as the cutaway view of the line 2-2 intercepting in the accompanying drawing 1.

Accompanying drawing 3 is depicted as the equivalent circuit diagram according to the simplification of the radiation imaging apparatus of first embodiment of the invention.

Accompanying drawing 4 is depicted as the plan view according to the pixel of the radiation detecting apparatus of second embodiment of the invention.

Accompanying drawing 5 is depicted as the cutaway view of the line 5-5 intercepting in the accompanying drawing 4.

Accompanying drawing 6 is depicted as the equivalent circuit diagram of the simplification of the radiation imaging apparatus of the present invention shown in the attached Figure 4 and 5.

Accompanying drawing 7 is depicted as another plan view of the pixel of radiation detecting apparatus according to a second embodiment of the present invention, and it is and the different view of view shown in the accompanying drawing 4.

Accompanying drawing 8 is depicted as the cutaway view of the line 8-8 intercepting in the accompanying drawing 7.

Accompanying drawing 9 is depicted as the further plan view of the pixel of radiation detecting apparatus according to a second embodiment of the present invention, and it is and the different view of view shown in accompanying drawing 4 and 7.

Accompanying drawing 10 is depicted as the equivalent circuit diagram in the simplification of the radiation imaging apparatus of the present invention shown in the accompanying drawing 9.

Accompanying drawing 11 is depicted as the plan view of pixel of the radiation detecting apparatus of a third embodiment in accordance with the invention.

Accompanying drawing 12 is depicted as along the cutaway view of the line 12-12 in accompanying drawing 11.

Accompanying drawing 13 is depicted as the equivalent circuit diagram of simplification of the radiation imaging apparatus of a third embodiment in accordance with the invention.

Accompanying drawing 14 is depicted as along corresponding to the cutaway view in the pixel of the line of the line 2-2 shown in the accompanying drawing 1 radiation detecting apparatus intercepting, a fourth embodiment in accordance with the invention.

Accompanying drawing 15 is depicted as in the zone that is provided with first and second dielectric films shown in the accompanying drawing 14 and the cutaway view of boundary member in the zone of first and second dielectric films is not set.

Accompanying drawing 16 is depicted as the plan view of the pixel of radiation detecting apparatus according to a fifth embodiment of the invention.

Accompanying drawing 17 is depicted as the cutaway view of the line 17-17 intercepting in the accompanying drawing 16.

Accompanying drawing 18 is depicted as the equivalent circuit diagram of the simplification of radiation imaging apparatus according to a sixth embodiment of the invention.

Accompanying drawing 19 is depicted as the schematic diagram in pixel region on the substrate and the relation between the peripheral circuit at according to a sixth embodiment of the invention radiation imaging apparatus.

Accompanying drawing 20 is depicted as the equivalent circuit diagram of another simplification of radiation detecting apparatus according to a sixth embodiment of the invention, and this accompanying drawing is with different at the accompanying drawing shown in the accompanying drawing 13.

Accompanying drawing 21 is depicted as the plan view of the pixel of radiation detecting apparatus according to a sixth embodiment of the invention.

Accompanying drawing 22 is depicted as the cutaway view of the line 22-22 intercepting in the accompanying drawing 16.

Accompanying drawing 23A and 23B are depicted as the schematic diagram according to the package example of (X ray) of the present invention radiation imaging apparatus, and accompanying drawing 23A is a plan view, and accompanying drawing 2B is a cutaway view.

Accompanying drawing 24 is depicted as and will arrives the view of radiation image-forming system according to the exemplary application of radiation imaging apparatus of the present invention.

Accompanying drawing 25 is depicted as the plan view according to the pixel of the radiation detecting apparatus of the eighth embodiment of the present invention.

Accompanying drawing 26 is depicted as along the cutaway view of the intercepting of the line 26-26 in the accompanying drawing 25.

Embodiment

Hereinafter, the preferred embodiments of the present invention are described with reference to the drawings.Though embodiment hereinafter describes at the situation that constitutes radiation detecting apparatus, but radiation detecting apparatus of the present invention is not limited to for example radiation such as X ray, alpha ray, gamma-rays are converted to the radiation detecting apparatus of electric charge carrier, but also can be used as the photoelectric conversion device that is converted to the signal of telecommunication such as light such as visible light, infrared lights is used.In addition, radiation imaging apparatus is the equipment that comprises sensor substrate and peripheral circuit, and this sensor substrate and peripheral circuit can be counted as radiation detecting apparatus.

(first embodiment)

At first, the first embodiment of the present invention is described.

Accompanying drawing 1-3 is respectively the equivalent circuit diagram according to the simplification of the plan view of the pixel of the radiation detecting apparatus of the first embodiment of the present invention and cutaway view and radiation imaging apparatus.

Main points of the present invention are that a plurality of dielectric films are arranged between switch element and the conversion element, and in grid wiring and the signal routing at least one is arranged in the zone that is placed between the dielectric film.In addition, this point is that all embodiment is common.

Accompanying drawing 1 is depicted as the plan view according to the pixel of the radiation detecting apparatus of the first embodiment of the present invention.

The plane design drawing of accompanying drawing 1 pixel portion that to be explanation be made of the effective pixel region of two row two row, each pixel comprises a pair of conversion element and switch element in this effective pixel region, conversion element is converted to the signal of telecommunication (electric charge carrier) with radiation, and pixel is arranged on the dielectric substrate in the mode of matrix.

The conversion element of present embodiment is the semiconductor conversion element of for example being made by the amorphous silicon of hydrogenation, and it will be converted to electric charge carrier such as light such as visible light, infrared lights with such as radiation such as X ray, gamma-rays.For example, when light ratio such as visible light etc. are converted to the signal of telecommunication but when directly not changing any radiation and being used as semiconductor conversion element, be disposed on the photo-electric conversion element as the luminescent coating (scintillator) of the wavelength conversion layer that radiation is converted to light ratio such as visible light (it can by the conversion of photoelectricity ground) such as the photo-electric conversion element of X ray etc.

In accompanying drawing 1, TFT (being switch element) has three electrodes: an electrode (source electrode) 123, another electrode (drain electrode) 124 and gate electrode 136.The signal routing 121 that is connected to the signal processing circuit unit of reading to handle of the electric charge carrier that is used to carry out accumulation is connected with the source electrode 123 of TFT.In addition, the grid wiring 122 that is connected with the gate driver circuit unit that switches on or off that is used to control TFT is connected with the gate electrode 136 of TFT.The channel part 125 of TFT is present between source electrode 123 and the drain electrode 124, can control electric charge carrier by the voltage of control gate electrode 136 and pass flowing of channel part 125 or stop.

Grid wiring 122 jointly is connected with the TFT of a plurality of pixels on being arranged on line direction, and signal routing 121 jointly is connected with the TFT of a plurality of pixels on being arranged on column direction.

At this, line direction and column direction are based on a kind of interim expression of the setting of a plurality of pixels in the two-dimensional matrix, and row and column can be replaced.That is, the direction that the direction of grid wiring 122 can be counted as being listed as, the direction of signal routing can be counted as the direction of row.

Semiconductor conversion element is made of lower electrode 126, light receiving area 128 and bias wiring 127, and is arranged on the top surface of TFT.Lower electrode 126 is connected with drain electrode 124 by through hole.

Signal routing 121 is arranged under the lower electrode 126, and is connected with the source electrode 123 at part place under being arranged on signal routing 121 by through hole.Yet the lower electrode 126 of semiconductor conversion element and signal routing 121 needn't be overlapping two-dimensionally each other as shown in Figure 1, and they can be configured to not overlap each other when needed.Signal routing 121 is configured to be placed under the lower electrode 126 dielectric film that is provided with and covers form between the dielectric film of the TFT part that is made of source electrode, drain electrode etc.

Accompanying drawing 2 is depicted as along the cutaway view of the intercepting of the line 2-2 in the accompanying drawing 1.Its top part has shown semiconductor conversion element, and its underpart part has shown TFT.Accompanying drawing 2 is depicted as for the electric capacity that reduces signal routing wiring is arranged on first dielectric film that is positioned on drain electrode or the source electrode and the example in the zone between second dielectric film.

Semiconductor conversion element in the part of top is the MIS N-type semiconductor N conversion element that is made of the dielectric film 110 of the 4th metal level 108, semiconductor conversion element, the second high ohmic semiconductor layer 111, (as ohmic contact layer) second impurity semiconductor layer 112 and transparent electrode layer 113.Semiconductor conversion element can be carried out the opto-electronic conversion of light ratio such as visible light etc.TFT in the part of bottom is by constituting as lower member: be arranged on the first metal layer 101 on the dielectric substrate, be arranged on gate insulating film 102 on the first metal layer 101, be arranged on the first high ohmic semiconductor layer 103 on the gate insulating film 102, be arranged on first impurity semiconductor layer 104 on the first high ohmic semiconductor layer 103 and be arranged on second metal level 105 on first impurity semiconductor layer 104.First dielectric film 106 and second dielectric film 109 are arranged between TFT part and the semiconductor conversion element, and the 3rd metal level 107 is arranged on second metal level 105.Luminescent coating 116 is arranged on the protective layer 117.

For example the transparent electrode layer of being made by ITO etc. 113 is arranged on second impurity semiconductor layer 112.When second impurity semiconductor layer 112 had low resistance, second impurity semiconductor layer 112 also can be used as electrode layer, and transparent electrode layer 113 is unnecessary.The 5th metal level 114 is the bias wirings that are used for applying voltage to transparent electrode layer 113, and is connected with common electrode drive device outside being arranged on substrate.Therefore, though being set on the transparent electrode layer 113 with contact electrode 113, the five metal levels 114, the 5th metal level 114 can be arranged to the form that covered by transparent electrode layer 113.In addition, bias wiring can be arranged in the pixel Anywhere.Yet, radiation is being converted under the situation of visible light with the semiconductor conversion element that visible light is converted to electric charge carrier by the second high ohmic semiconductor layer 111, light can be received by the whole surface in such zone, by bias wiring being placed the zone that the 4th metal level 108 is not set collect electric charge carrier easily, the 4th metal level 108 is lower electrodes of semiconductor conversion element in this zone.Therefore, semiconductor conversion element remains more preferred.

Signal routing 121 shown in the accompanying drawing 1 is made of the 3rd metal level 107 in the accompanying drawing 2, and is arranged in the zone between first dielectric film 106 and second dielectric film 109.Therefore, when the film that for example has thin thickness and higher relative dielectric constant was used as first dielectric film 106 or second dielectric film 109, this film had formed bigger electric capacity with the lower electrode of the semiconductor conversion element of being made by the 4th metal level that is arranged in the part of top.In addition, this film has formed bigger electric capacity with the grid wiring (not shown) that is connected to the gate electrode of being made by the first metal layer 101 on the part of intersecting with grid wiring.Therefore, preferred first dielectric film 106 and second dielectric film 109 are to be formed the dielectric film with thicker thickness and lower dielectric constant.In the present embodiment, use the dielectric film of making by organic material with lower relative dielectric constant.Have higher stable on heating material and be preferably used as organic material such as polyimide resin, acrylic resin etc.In addition, preferably have from about 2.5 the materials of relative dielectric constant to about 4 the scope.Even in the thin zone of thickness, preferably 1 micron or bigger of the thickness of the dielectric film of making by organic material.Yet, for example, have from about 3.5 to about 4.5 the scope relative dielectric constant silicon oxide film and have from about 5.5 to about 7.5 the scope relative dielectric constant and can be formed thicklyer at silicon nitride film better aspect the insulation characterisitic, these films have relatively low relative dielectric constant in inorganic material.Therefore, the electric capacity of the grid wiring that intersects with signal routing be can reduce, the semiconductor conversion element that in the part of top, is provided with and the electric capacity of signal routing also can be reduced.

Simultaneously, because have 1 micron or bigger thickness and the dielectric film of for example being made by organic material mentioned above is arranged in the cross section of signal routing and grid wiring, so this electric capacity can greatly be reduced.In addition, signal routing 121 is arranged in the zone that is placed between first dielectric film 106 and second dielectric film 109 just.Even at the grid wiring 122 shown in the accompanying drawing 1, the electric capacity that is formed by grid wiring 122 and signal routing 121 still can be reduced, and also can be reduced with respect to the electric capacity of semiconductor conversion element.Grid wiring 122 was set between first dielectric film 106 and second dielectric film 109 situation in the zone of placing as the 3rd metal level 107 under, grid wiring 122 was provided with from the first metal layer 101 by through hole.In addition, at this moment signal routing 121 is formed by the metal level identical with the metal level of the source electrode of TFT and drain electrode.

Under the situation of using the dielectric film of making by organic material, form dielectric film easily under following situation: for example use photosensitive polyimide resin or photosensitive acrylic resin, and carry out following processing: cure the formation of (1) organic material dielectric film, (2) exposure, (3) development and removing and (4).In addition, can use the photoetching process of using photoresists carries out composition and for example by dry ecthing it is carried out the processing of removing in the part of top.

In addition, though the semiconductor conversion element in the part of top is described to MIS N-type semiconductor N conversion element in the accompanying drawing 2, can use the PIN N-type semiconductor N conversion element that constitutes by n type semiconductor layer, the second high ohmic semiconductor layer and p type semiconductor layer.At this moment, equally similarly, under the situation of PIN N-type semiconductor N conversion element, when the resistance of p type semiconductor layer and n type semiconductor layer hanged down, p type semiconductor layer and n type semiconductor layer also can be used as electrode layer.In addition, carrying out radiation directly changes the amorphous selenium of (it directly is converted to electric charge carrier with radiation), cadmium telluride etc. and can be used as semiconductor conversion element.

Accompanying drawing 3 is depicted as the equivalent circuit diagram of the simplification of the radiation imaging apparatus shown in attached Fig. 1 and 2.

The background radiation imaging device is the example by the radiation imaging apparatus that constitutes with lower member: with the pixel of cells arranged in matrix, each comprises respectively corresponding to the substrate of the grid wiring of the wiring of the quantity of row or column or signal routing, signal processing circuit unit, gate driver circuit unit and common electrode drive device circuit unit, each unit be arranged on substrate around.Each pixel is made of paired semiconductor conversion element and TFT.

On substrate 160, pixel is with cells arranged in matrix, and TFT part 152 and semiconductor conversion element part 153 are coupled to each other in each pixel.Grid wiring 154 is connected with TFT part 152 with signal routing 155, is connected with semiconductor conversion element part 153 from the bias wiring 157 of common electrode drive device circuit unit 156.

Signal routing 155 is connected with the S1-S6 of signal processing circuit unit 150 outside being arranged on substrate 160, reads in the electric charge carrier that produces in the semiconductor conversion element part 153 by TFT part 152 and produces image.Grid wiring 154 is connected similarly with gate driver circuit unit 151 outside being arranged on substrate 160, thereby with the connection/cut-out of the voltage control TFT part 152 of G1-G6 control gate electrode.Common electrode drive device circuit unit 156 control will impose on the voltage of semiconductor conversion element, and voltage is flowed to high ohmic semiconductor layer in semiconductor conversion element specially.At this moment, for example, can select to exhaust bias voltage and accumulation bias voltage, and control the intensity of the size of the voltage that will carry with the control electric field.Particularly, under the situation of using MIS N-type semiconductor N conversion element, need control voltage after reading electric charge carrier, to remove hole or the electronics of in the interface of dielectric film and high ohmic semiconductor layer, accumulating, carry out the control of voltage by common electrode drive device circuit unit 156.

Though each wiring of bias wiring 157 is arranged on the center of each the semiconductor conversion element unit (part) 153 in the accompanying drawing 3, but this wiring can be physically located in the zone that the 4th metal level 108 is not set, and the 4th metal level 108 is lower electrodes of semiconductor conversion element.

Two signal processing circuit units 150 and two gate driver circuit unit 151 can be separately positioned on upper and lower side and left and right side.Under the situation of signalization treatment circuit unit 150 on the upper and lower sides, signal routing 121 for example can be divided into two parts at the center so that control the signal of its first half and control the signal of its latter half with the signal processing circuit unit of downside with the signal processing circuit unit of upside.Be arranged in gate driver circuit unit 151 under the situation of left and right sides, grid wiring 122 can be divided into two parts at the center, and perhaps grid wiring 122 can remain on the state of connection.

(second embodiment)

The second embodiment of the present invention is described.

Accompanying drawing 4-10 is the plan view and the cutaway view of radiation detecting apparatus according to a second embodiment of the present invention, and the equivalent circuit diagram of the simplification of radiation detecting apparatus.

The main points of present embodiment are that the multiple conducting wires of signal routing is set to a plurality of pixels of row, and a plurality of pixels of row are assigned to each wiring of signal routing in order so that each wiring of signal routing is connected to the thin-film transistor of the pixel of distribution.

Accompanying drawing 4 is plan views of the pixel of radiation detecting apparatus according to a second embodiment of the present invention.

Accompanying drawing 4 is depicted as the plane design drawing of the pixel portion that is made of two row, two row in effective pixel region, pixel on dielectric substrate, is converted to radiation the conversion element and the switch element coupling of the signal of telecommunication with cells arranged in matrix in each pixel in effective pixel region.Be provided with four leads of signal routing.The pixel of one row is assigned as two groups according to priority, corresponding to the lead of the signal routing of two systems.

The semiconductor conversion element of present embodiment also is the semiconductor conversion element that radiation is converted to the signal of telecommunication.Under the situation of using the photo-electric conversion element that light ratio such as visible light etc. is converted to the signal of telecommunication, luminescent coating is arranged on the photo-electric conversion element.

TFT as switch element is described now.Among one group of TFT each is such TFT, and this TFT is made of three electrodes that are arranged on first source electrode 131, first drain electrode 132 and first grid electrode 138 on the dielectric substrate.Among other group TFT each is the TFT that is made of second source electrode 133, second drain electrode 134 and second grid electrode 139.TFT is divided into two such TFT systems.Be assigned as two groups the pixel order of every row, in every row, be provided with and be connected to two leads that are used to carry out to the signal routing of the signal processing circuit unit that reads processing 150 of the electric charge carrier of accumulation.That is, the lead of signal routing is divided into first signal routing 129 that is connected to first source electrode 131 and the secondary signal wiring 130 that is connected to second source electrode 133.In addition, the gate driver circuit unit 151 that switches on or off of control TFT connects with the second grid wiring 141 that is connected with second grid electrode 139 with the first grid wiring 140 that is connected to first grid electrode 138.The channel part 125 of TFT is present between each source electrode and each drain electrode, and the control of the voltage by each gate electrode can be controlled electric charge carrier and pass flowing of channel part 125 and stop.

Semiconductor conversion element is made of lower electrode 126, light receiving area 128 and bias wiring 127, and is arranged on the top surface of TFT.Two lower electrodes that are provided with at the upside of view in lower electrode 126 are connected with first drain electrode 132 by through hole, and two lower electrodes that are provided with in the downside of view are connected with second drain electrode 134 by through hole.

Shone and after electric charge carrier had been accumulated in the pixel according to exposure, information was sent to signal processing circuit unit 150 by TFT in radiation.At this moment, in order to increase the semaphore that once can transmit, the conductor separation of signal routing is become two systems.In accompanying drawing 4, the signal routing that connects with first source electrode 131 of first grid wiring 140 TFT that are connected is set to first signal routing 129.The signal routing that connects with second source electrode 133 of second grid wiring 141 TFT that are connected is set to secondary signal wiring 130.First grid wiring 140 and second grid wiring 141 were connected to each other in substrate before gate driver circuit unit 151, and two grid wirings 140 and 141 are configured to be driven simultaneously.Be applied simultaneously to two grid wirings 140 and 141 o'clock at the connection voltage of TFT, four TFT shown in the accompanying drawing 4 connect simultaneously, and electric charge carrier can be read out from four leads of first signal routing 129 and secondary signal wiring 130 both whole signal routings.

In this figure, each signal routing is arranged under the lower electrode 126, and is connected with 133 with each source electrode 131 under still being arranged on each signal routing 129 and 130 by through hole.Each signal routing 129 and 130 be configured to be placed under the lower electrode 126 dielectric film that is provided with and cover TFT partly (such as each source electrode 131 and 133 and each drain electrode 132 and 134) dielectric film between form.

Accompanying drawing 5 is depicted as the cutaway view of the line 5-5 intercepting in the accompanying drawing 4.Its top part is depicted as semiconductor conversion element, and its underpart part is depicted as TFT.Accompanying drawing 5 is depicted as wiring and is arranged in first dielectric film that is placed on source electrode or the drain electrode and the zone between second dielectric film example with the electric capacity that reduces signal routing.

Saved to the description of the common part of the part shown in the accompanying drawing 2.

Semiconductor conversion element in the part of top is the MIS N-type semiconductor N conversion element that is made of the dielectric film 110 of the 4th metal level 108, semiconductor conversion element, the second high ohmic semiconductor layer 111, (as ohmic contact layer) second impurity semiconductor layer 112 and transparent electrode layer 113.Semiconductor conversion element can be carried out the opto-electronic conversion of light ratio such as visible light etc.The 5th metal level 114 is the bias wirings that voltage imposed on transparent electrode layer 113, and is connected with common electrode drive device 156 outside being arranged on substrate.

Form by the 3rd metal level 107 in the accompanying drawing 5 at each signal routing 129 shown in the accompanying drawing 4 and 130, and be arranged on the zone that places between first dielectric film 106 and second dielectric film 109.Therefore, preferably each has the dielectric film of thicker thickness and lower dielectric constant for first dielectric film 106 and second dielectric film 109, uses dielectric film that organic material with lower relative dielectric constant makes as above-mentioned dielectric film in the present embodiment.Organic material preferably has the material of high-fire resistance such as polyimide resin, acrylic resin etc., and relative dielectric constant is preferably lower one to about 4 the degree from about 2.5.Dielectric film of being made by organic material 106 and 109 thickness preferably are respectively 1 micron or higher.

Therefore, even signal routing is divided into two systems and when comparing the wiring that double amount is set with the quantity of common situation, as shown in Figure 4, still can prevent that the electric capacity between the every lead of the grid wiring that intersects at signal routing with this signal routing from increasing, and prevent the semiconductor conversion element that in the part of top, is provided with and the increase of the electric capacity between the every lead in the signal routing.As a result, as mentioned equally, can increase the quantity of the signal that can obtain simultaneously in the time constant that does not increase grid wiring, this time constant is made of the resistance of electric capacity and grid wiring, and therefore the radiation imaging apparatus that can drive at high speed is provided.

In addition, though the semiconductor conversion element in the part of the top of accompanying drawing 5 is described to MIS N-type semiconductor N conversion element, but can use PIN N-type semiconductor N conversion element similarly, amorphous selenium, cadmium telluride of perhaps carrying out the direct conversion of radiation etc. all can be used as semiconductor conversion element.

Accompanying drawing 6 is the equivalent circuit diagram in the simplification of the radiation imaging apparatus shown in the attached Figure 4 and 5.

Accompanying drawing 6 is depicted as the example by the radiation imaging apparatus that constitutes as lower member: be provided with the substrate of pixel on it with the form of matrix, grid wiring (its number of conductors equals line number), signal routing (its number of conductors is the twice of columns); Signal processing circuit unit; The gate driver circuit unit; With common electrode drive device circuit unit, these circuit units be arranged on substrate around.Each pixel is made of semiconductor conversion element coupled to each other and TFT.

On substrate 160, pixel is provided with in the mode of matrix, and each pixel is made of TFT part 152 coupled to each other and semiconductor conversion element part 153.Grid wiring 154 is connected with TFT part 152 with signal routing 155, is connected with semiconductor conversion element part 153 from the bias wiring 157 of common electrode drive device circuit unit 156.The lead g11 of grid wiring 154 and g12, lead g21 and g22 and lead g31 and g32 interconnect respectively, each lead g11, and g12, g21, g22, g31 and g32 can be by gate driver circuit unit 151 with three wiring G1-G3 controls.For example, when the connection voltage of TFT imposed on wiring G1, the connection voltage of TFT imposed on the lead g11 and the g12 of grid wiring 154 simultaneously.At this moment, by signal processing circuit unit 150, the lead s12 that electric charge carrier can be simultaneously be connected from the TFT that is connected with lead g11 of signal routing, s22, s32 ... the lead s11 that is connected with the TFT that is connected with lead g12, s21, s31 ... two groups in be read out.Therefore, can carry out high-speed driving.

Accompanying drawing 7 is depicted as the plan view according to the pixel of the radiation detecting apparatus of second embodiment, and it is the plane design drawing of the pixel of the explanation example different with the example of accompanying drawing 4.

This radiation detecting apparatus aspect different with the radiation detecting apparatus shown in the accompanying drawing 4 is: the light receiving area that is arranged on the semiconductor conversion element in the part of top is configured to avoid at least a part and the channel part of source electrode, drain electrode and the gate electrode of TFT.

As an example, this radiation detecting apparatus stitches part 137 be to have formed the light receiving area hole in the radiation detecting apparatus difference shown in the accompanying drawing 4, and each source electrode forms with bigger size separately with each drain electrode.In the manufacturing of TFT is handled, defective have certain possibility.At this moment, for example separate the influence that the pixel that comprises defective can be checked the pixel that comprises defective with electricity with laser transpiration (transpiring) TFT part.At this moment, the information that comprises the pixel of defective can be handled by using the information and executing correction around pixel.At this moment, needing to remove easy light absorbing light receiving area in advance will be by each source electrode of transpiration and each drain electrode so that search defect part apace and expose.

Accompanying drawing 8 is depicted as the cutaway view of the line 8-8 intercepting in the accompanying drawing 7.

Accompanying drawing 8 illustrates at an upper portion thereof semiconductor conversion element in the part and the TFT in the part of its underpart.Accompanying drawing 8 is depicted as such example: wherein each signal routing 129 and 130 is arranged in first dielectric film 106 and the zone between second dielectric film 109 that is positioned on source electrode 131 or the drain electrode 132, and wherein light receiving area on TFT opening so that reduce the electric capacity of signal routing.

Saved to the description of the common part of the part shown in the accompanying drawing 5.

Only be arranged on the TFT and the easy especially light absorbing second high ohmic semiconductor layer 111 in the part removing that just in time is arranged on the TFT.At this moment, do not keep, when removing the second high ohmic semiconductor layer 111, can remove dielectric film 110 yet though the dielectric film 110 of semiconductor conversion element is eliminated with former state.By adopting this structure, can be before luminescent coating being arranged on the protective layer 117 with the laser evaporation defect part after it, to form luminescent coating and to guarantee high yield.

In addition, when the second high ohmic semiconductor layer 111 is arranged on the whole surface, as shown in Figure 5, with laser to the evaporation of certain part be used for recovering defective will cause at the defective effect of the second high ohmic semiconductor layer 111 defective around.Therefore, in the All Ranges of irradiating laser, need to remove the second high ohmic semiconductor layer 111.This structure not only may be used on MIS N-type semiconductor N conversion element, but also can be applied to above-mentioned PIN N-type semiconductor N conversion element, further can also be applied to the situation of using direct transition material.In addition, though with Fig. 8 in be provided with in the part zone much at one of the gate electrode make by the first metal layer 101 and removed the second high ohmic semiconductor layer 111, preferably this high ohmic semiconductor layer 111 than the wideer regional split shed of the first metal layer 101 with irradiating laser stably.

Accompanying drawing 9 is depicted as the plan view according to the pixel of the radiation detecting apparatus of second embodiment.

Accompanying drawing 9 is depicted as the plane design drawing of the pixel example different with the pixel shown in accompanying drawing 4 and 7.Accompanying drawing 9 is depicted as the pixel portion that is made of triplex row two row in effective pixel area, pixel is provided with in the mode of matrix in this pixel portion, and each pixel comprises TFT and the semiconductor conversion element that is coupled with TFT.The aspect different with the pixel portion shown in the accompanying drawing 4 is to be provided with the six conductors of signal routing.Be assigned in three parts pixel order in delegation, and corresponding to three wiring systems of signal routing.

Pixel portion difference shown in pixel portion and accompanying drawing 4 and 7 is that three leads of first signal routing 129, secondary signal wiring the 130 and the 3rd signal routing 135 are arranged in the row, so the six conductors of signal routing is provided to be listed as in the pixel of the arranged in matrix that constitutes by triplex row two.In addition, be provided with three leads of first grid wiring 140, second grid wiring the 141 and the 3rd grid wiring 142.Be arranged on the zone that places separately between the organic material with lower relative dielectric constant at each signal routing shown in the accompanying drawing 9, therefore can reduce in signal routing and the semiconductor conversion element in the part of top or the electric capacity that produces between connecting up on every side.Therefore, even signal routing is divided into three times of lead that the quantity of the wiring of three systems and setting is normal condition, can prevent that still the electric capacity of each grid wiring that these leads with this signal routing intersect from increasing.In addition, as for signal routing, because the quantity of the TFT that is connected with a lead of signal routing has reduced, therefore the electric capacity that forms between source electrode in the TFT part and the gate electrode becomes littler, and also can make the total capacitance of signal routing less.

As a result, the degree of freedom of the method for drawing increases around each wiring, and drawing becomes possibility around a plurality of leads in the pixel that is provided with in delegation or row.In addition, the quantity that can increase the signal that obtains simultaneously as indicated above, and do not increase the time constant of grid wiring, this time constant is made of the electric capacity and the resistance of grid wiring.Therefore, can provide radiation detecting apparatus with higher speed drive.Though the quantity of the lead of the setting of signal routing is three times of lead of the normal condition in the accompanying drawing 9, the quantity of the signal routing of setting can be many times, such as four times, five times etc.In addition, when the electric capacity between grid wiring and signal routing has formed the bigger part of TFT part, this structure will make the quantity of TFT of a lead of lead being connected to grid wiring or signal routing be reduced to 1/4,1/5 etc.Therefore, this structure has caused further the reducing of electric capacity of each wiring.

Accompanying drawing 10 is depicted as the schematic diagram of equivalent electric circuit of the simplification of radiation imaging apparatus shown in the accompanying drawing 9 and peripheral circuit thereof.

Accompanying drawing 10 is depicted as the example with the radiation imaging apparatus that constitutes as lower member: the substrate, the grid wiring corresponding to the quantity of row, signal routing (quantity of its wiring is three times of quantity of row) that comprise the pixel that is provided with matrix-style; Signal processing circuit unit; The gate driver circuit unit; With common electrode drive device circuit unit, around these circuit units all are arranged on.In a pixel, semiconductor conversion element and TFT coupling.

In substrate 160, pixel is provided with in the mode of matrix, and TFT part 152 and semiconductor conversion element part 153 are coupled to each other in each pixel.Grid wiring 154 is connected with TFT part 152 with signal routing 155, is connected with semiconductor conversion element part 153 from the bias wiring 157 of common electrode drive device circuit unit 156.Three lead g11-g13 and three lead g21-g23 of grid wiring 154 interconnect in every group, and can be by gate driver circuit unit 151 controls with two lead G1 and G2.For example, when the connection voltage of TFT was applied to lead G1, the connection voltage of TFT imposed on lead g11, g12 and the g13 of grid wiring 154 simultaneously.At this moment, the electric charge carrier in triplex row is read simultaneously.From the lead s12 of the signal routing that is connected with lead g11 by TFT, s22, s32 ... in read in electric charge carrier on first row.From the lead s11 of the signal routing that is connected with lead g12 by TFT, s21, s31 ... in read in electric charge carrier on second row.Then, from the lead s13 of the signal routing that is connected with lead g13 by TFT, s23, s33 ... in read in electric charge carrier on the third line.Signal processing circuit unit 150 reads electric charge carrier simultaneously from all wirings of signal routing.Therefore, can carry out high-speed driving.

Same in the radiation detecting apparatus of this structure, by signal routing being arranged in the zone that is placed between first dielectric film 106 and second dielectric film 109, can make the increase of electric capacity less.Therefore, drawing around wiring with the higher degree of freedom becomes possibility, and can change the method for around wiring, drawing can be so that can provide with the radiation detecting apparatus of the image of lower noise processed high-speed motion.

(the 3rd embodiment)

Accompanying drawing 11-13 is depicted as the plan view and the cutaway view of pixel of the radiation detecting apparatus of a third embodiment in accordance with the invention, and the equivalent circuit diagram of the simplification of radiation imaging apparatus.

The radiation detecting apparatus that the 3rd embodiment provides comprises two transistors so that can realize high-speed driving in pixel, this radiation detecting apparatus also can be realized mobile image rays photograph.The main points of present embodiment are to be provided with two-dimensionally pixel, each pixel comprises a semiconductor conversion element and two TFT that are coupled with this semiconductor conversion element, and one among two TFT is used for the purpose that electric charge carrier shifts, and the purpose that another is used to reset.According to present embodiment, for example, when shifting the electric charge carrier of specific pixel, can carry out simultaneously and finish resetting of pixel that electric charge carrier shifts.

When having formed the pixel with this structure, the number of conductors of the grid wiring that requirement is connected with TFT is if form the twice of pixel and the quantity under the situation of the TFT that is not provided for resetting by the structure of routine.Therefore, the number of conductors of the grid wiring that intersects with signal routing increases to strengthen the electric capacity of signal routing.Obtaining with the high-speed driving radiation detecting apparatus under the situation of mobile image, the exposure of radiation need reduced to lower limit so that reduce the exposure dose of object.Yet the increasing of the electric capacity of signal routing has increased the noise of checkout equipment, thus deterioration the picture quality in low radiation area.Therefore cause needs to increase the exposure of radiation.

In addition, because not only signal routing but also the wiring that resets all intersect with every lead of grid wiring (wiring that intersects as every lead with grid wiring), the quantity increase of the lead that intersects with every lead of grid wiring is with the electric capacity of increasing grid wiring.As a result, the time constant of grid wiring becomes bigger so that makes it can not increase actuating speed.

Therefore, the structure that the high-speed driving that is used for mobile image for execution is provided with two TFT is described in the present embodiment.Present embodiment adopts the structure that radiation detecting apparatus can be provided, under the situation of the structure that two TFT are set by greatly reducing at each lead and the signal routing of grid wiring or the electric capacity between the wiring of resetting, this radiation detecting apparatus can drive at high speed and realize that mobile image rays takes a picture with lower noise.

Accompanying drawing 11 is plan views of present embodiment, shows pixel, and two TFT and semiconductor conversion element as switch element in each pixel are coupled to each other.The signal routing 155 that is connected with signal processing circuit unit is connected with a TFT170.In addition, the wiring that resets that makes the electric charge carrier accumulated in the pixel reset is connected with the 2nd TFT171.In addition, the first grid that is connected with first grid drive circuit 175 (it controls a TFT170) wiring 172 is connected with the first grid electrode.The second grid that is connected with second grid drive circuit 176 (it controls the 2nd TFT171) wiring 173 is connected with the second grid electrode.In addition, semiconductor conversion element and a TFT 170 and the 2nd TFT 171 both be connected.By using, can carry out simultaneously by signal routing 155 and the electric charge carrier in the semiconductor conversion element be transferred to the operation of signal processing circuit and make the operation that the remaining electric charge carrier accumulated resets in having finished the pixel that electric charge carrier shifts in this pixel shown in the plan view.For example, present embodiment is configured to: in the electric charge carrier of accumulating in the semiconductor conversion element that reads accompanying drawing 11 upsides, wiring 174 can be so that the remaining electric charge carrier of (the electric charge carrier of promptly having finished accumulation reads) semiconductor conversion element of accompanying drawing 11 downsides resets by resetting.As a result, can carry out simultaneously and read and reset processing, therefore can realize high-speed driving.

To become problem adopting each pixel to have the increase electric capacity that reduces each wiring under the situation of dot structure of two TFT.For example, the quantity of intersecting of the signal routing 155 that intersects with grid wiring is increased to nearly twice, and this is because the number of conductors of grid wiring doubles.As a result, the electric capacity of signal routing 155 increases so that has increased the noise of transducer.

In addition, from the angle of grid wiring, the quantity of intersecting with wiring is increased to nearly twice equally, because grid wiring not only intersects with signal routing, but also intersects with the wiring 174 that resets.As a result, the time constant of grid wiring increases greater than the time constant that is equipped with the structure of a TFT in each pixel, therefore needs to reduce the actuating speed that drives drive circuit.

Therefore, by on the cross section between each wiring as shown in Figure 12, forming each dielectric film that all has thicker thickness, can realize under the prerequisite that does not increase the electric capacity between each lead of signal routing and grid wiring that each pixel is equipped with the dot structure of two TFT to reduce the electric capacity of cross section.Therefore, can realize to carry out with lower noise the radiation imaging apparatus of high-speed driving.

Accompanying drawing 12 is depicted as the cutaway view of part of the line 12-12 of accompanying drawing 11.TFT on the right side of accompanying drawing 12 represents a TFT170, and the TFT on the left side of accompanying drawing 12 represents the 2nd TFT171.Shown in this view, the signal routing of being made by the 3rd metal level 107 is arranged in the part of top, and thicker dielectric film places between this signal routing and this TFT.In addition, the wiring that resets also has a similar structure.As a result, grid wiring and signal routing can be set to away from each other, and the electric capacity that the cross part office in wiring can be produced is reduced to minimum.As thicker dielectric film, make this structure become thicker film and material with less dielectric constant is desirable.For example, using under the situation of inorganic material, be preferably formed silicon oxide film or silicon nitride film make its have from about 1.0 microns to about 4.0 microns thickness.Using under the situation of organic material for example, be preferably formed and have from about 3.0 microns films to about 10.0 micron thickness.

Accompanying drawing 13 is depicted as the equivalent circuit diagram of the simplification of the radiation imaging apparatus that comprises pixel, and each pixel has two TFT and a semiconductor conversion element coupled to each other.Control be used to shift the first grid drive circuit 175 of a TFT170 of electric charge carrier and second grid drive circuit 176 that control is used for the 2nd TFT171 of reset of pixels be arranged on substrate around.In addition, be provided with the signal processing circuit 150 that is connected to signal routing 155, the reset control circuit unit 177 and the common electrode drive device circuit unit 156 that is connected with bias wiring 157 that is connected to the wiring 174 that resets.Therefore, though pixel illustrates as the matrix of 5 row * 4 row simply, this pixel reality is made of for example 1000 row * 1000 row.

By adopting above-mentioned structure, can realize the radiation imaging apparatus that comprises pixel (semiconductor conversion element that each pixel is equipped with two TFT and is coupled with two TFT) and can realize having the high-speed driver of lower noise.

(the 4th embodiment)

The fourth embodiment of the present invention is described.

Except first, second and the 3rd embodiment, the main points of present embodiment be by the dielectric film that the organic material with low relative dielectric constant is made be used as constitute dielectric film the material that is fit to adjust its thickness.

As for organic material, having higher stable on heating material is desirable such as polyimide resin, acrylic resin etc., and from the viewpoint of relative dielectric constant, it is preferred having from about 2.5 the materials of relative dielectric constant to about 4 the scope.Even in the thin zone of thickness, preferably 1 micron or bigger of the thickness of the dielectric film of making by organic material.

Total thickness of the dielectric film of being made by organic material is thick more, and electric capacity is more little.Yet total thickness of dielectric film is thick more, when forming wiring by photoetching process to being positioned in the processing that has formed the semiconductor conversion element that is arranged on after the dielectric film on this dielectric film and the wiring in the zone between this dielectric film difficulty more that becomes.For example, become when surpassing 20 microns thickness at the total film thickness of dielectric film, because when the coating photoresist due to the bigger ladder, the relatively poor zone of adhesion characteristics that has produced photoresists.In addition, the thickness of the resist only part place in the concave surface position at ladder position becomes thicker, and photoresist can not expose in the process of exposure fully, and development treatment afterwards produces figure remnants.This situation also is like this in pixel, but, for example in the zone outside pixel region in the zone that is provided with dielectric film with boundary between the zone of dielectric film is not set, it is thicker that the thickness of resist only becomes on boundary member, figure remnants produce along the border.For example, when carrying out the composition of metal film and transparency electrode, produce this figure when remaining, caused the short circuit of the figure between lead.Therefore, be difficult to carry out stable manufacturing by photoetching treatment.Therefore, according to the purposes of the dielectric film that will use the part place of needs with film thickness monitoring for thicker unwanted part place be controlled to be thinner in, need arrange.In addition, need make total thickness of dielectric film is 20 microns or littler.

Accompanying drawing 14 is depicted as the situation that the dielectric film of being made by organic material in the present embodiment is used as first dielectric film 106 and second dielectric film 109.As shown in Figure 14, the thickness of second dielectric film 109 is formed thicker than the thickness of first dielectric film 106.For example, the thickness of first dielectric film 106 is formed about 1 micron to about 3 microns, and the thickness of second dielectric film 109 is formed about 2 microns to about 10 microns.This is in order to prevent the forming of bigger electric capacity between the lower electrode of the semiconductor conversion element of being made by the 4th metal level 108 and the signal routing of being made by the 3rd metal level 107 that just in time is being provided with under the lower electrode, and this is because the area of lower electrode is bigger.Therefore, the electric capacity that forms between the two at signal routing and the lower electrode thickness that can be arranged on second dielectric film 109 between signal routing and the lower electrode by thickening reduces.In addition, the thin reason of thickness of first dielectric film 106 is: the area of the part that the area that is connected to the grid wiring of the gate electrode of being made by the first metal layer and the part that the signal routing (not shown) overlaps each other is more overlapping than as shown in Figure 1 signal routing and lower electrode is much smaller.

Even still can reduce electric capacity natch because this area is less by the thickening thickness, exactly, the thickness of first dielectric film 106 is thick more, and electric capacity is good more.Yet when the thickness of first dielectric film 106 and second dielectric film 109 for example all was formed 10 microns, the ladder that is provided with the zone of two dielectric films therein and the figure between the zone of these two dielectric films wherein is not set became up to 20 microns.As a result, after the formation of dielectric film 106 and 109 when using photoetching process to form semiconductor conversion element, at composition produced figure remnants in dielectric film 106 and 109 the boundary member.For example, the upper electrode of the semiconductor conversion element that conducting film is made such as the bias wiring of being made by the 5th metal level 114, by transparent electrode layer 113 etc. etc. still keeps, therefore between wiring, form short circuit, therefore can not stably make radiation detecting apparatus.

Therefore, present embodiment makes between grid wiring and signal routing (they have formed lower electric capacity) the thickness attenuate of first dielectric film 106 that is provided with, with the ladder of the boundary in the zone that reduces wherein to be provided with the zone of dielectric film 106 and 109 and dielectric film 106 and 109 wherein are not set.Therefore, more preferably first dielectric film 106 and second dielectric film 109 are formed the light blocking parts of visible light transmissive not such as black resist.

Accompanying drawing 15 is depicted as the zone of first dielectric film 106 that is provided with in the accompanying drawing 14 and second dielectric film 109 and the cutaway view of boundary member in their zone is not set.

The boundary position of the end of each dielectric film in a plurality of dielectric films 106 and 109 differs from one another, and total film thickness staged ground changes.That is, the position on border that wherein is provided with the zone of each dielectric film 106 and 109 and the zone of each dielectric film 106 and 109 wherein is not set is provided with the zone of whole a plurality of dielectric films 106 and 109 therein and wherein is not provided with between the zone of any dielectric film 106 and 109 different.

As indicated above, can stably make radiation imaging apparatus by the thickness attenuate that makes the dielectric film in the zone that electric capacity forms lessly.Yet, thereby must be to make manufacture process more stable to avoid on a certain position, having ladder carrying out first dielectric film 106 as shown in accompanying drawing 14 and the composition of second dielectric film 109 on the different positions.Therefore, as shown in Figure 15, the composition position by translation first dielectric film 106 and second dielectric film 109 changes total film thickness in the mode of step figure, can make manufacture process more stable.Between the end of the dielectric film shown in the view 106 and 109 preferably is the thickness of second dielectric film 109 or bigger apart from T at least.In addition, second dielectric film 109 can be formed the end of the figure that covers first dielectric film 106 in the accompanying drawing 15.In this case, when using the photoetching process composition, second dielectric film 109 is subjected to the influence of the thickness of first dielectric film 106 easily, preferably is the thickness of first dielectric film 106 or bigger at least apart from T between the end of dielectric film 106 and 109 therefore.

(the 5th embodiment)

The fifth embodiment of the present invention is described.

Accompanying drawing 16 and 17 is depicted as the plan view and the cutaway view of the pixel of radiation detecting apparatus according to a fifth embodiment of the invention.

The main points of present embodiment are that a plurality of dielectric films are 3 or more, place two or more zones between dielectric film, and further each wiring are formed by the metal level that differs from one another.

Accompanying drawing 16 is depicted as the plan view of the pixel of radiation detecting apparatus according to a fifth embodiment of the invention.Accompanying drawing 16 is depicted as by pixel wherein and is arranged on the plane design drawing of the pixel portion that two row * two row of the effective pixel region on the dielectric substrate constitute with matrix-style, and this pixel comprises separately the switch element that radiation or light are converted to the conversion element of the signal of telecommunication and are coupled with each conversion element separately.

Embodiment difference shown in present embodiment and the accompanying drawing 4 is that first signal routing 129 and secondary signal wiring 130 is formed by the metal level that differs from one another, and two wirings 129 and 130 all place the metal level between TFT part and the semiconductor conversion element dielectric film between partly to form by each.

Accompanying drawing 17 is depicted as the cutaway view of the line 17-17 intercepting in the accompanying drawing 16, and has shown that the same metal layer of the source electrode that uses TFT and drain electrode forms the example of the situation of signal routing.

Save to the description of the common part of the part shown in the accompanying drawing 5.

The top part is depicted as semiconductor conversion element, and the bottom part is depicted as TFT.Semiconductor conversion element in the part of top is the MIS N-type semiconductor N conversion element that is made of the dielectric film 110 of the 5th metal level 114, semiconductor conversion element, the second high ohmic semiconductor layer 111, (as ohmic contact layer) second impurity semiconductor layer 112 and transparent electrode layer 113.Light ratio such as visible light can be changed by photoelectricity ground.The 6th metal level 118 is the bias wirings that apply voltage to transparent electrode layer 113, and is connected with common electrode drive device outside being arranged on substrate.

First signal routing 129 shown in the accompanying drawing 16 is formed by the 3rd metal level 107 in the accompanying drawing 17, and is arranged in the zone that is placed between first dielectric film 106 and second dielectric film 109.In addition, secondary signal shown in the accompanying drawing 16 wiring 130 is formed by the 4th metal level 108 in the accompanying drawing 17, and is arranged in the zone that is placed between second dielectric film 109 and the 3rd dielectric film 115.

Therefore, first dielectric film 106, second dielectric film 109 and the 3rd dielectric film 115 use the dielectric film of being made by organic material separately.As for organic material, the material that preferably has superior heat resistance is such as polyimide resin, acrylic resin etc., and as for relative dielectric constant, this constant is less from 2.5 to 4 preferably.Dielectric film of making by organic material 106,109 and 115 each preferably 1 micron or bigger of thickness.

Therefore, even signal routing is divided into the twice that a plurality of systems and lead are set to the lead in the general case as accompanying drawing 4 as shown in nearly, still can prevent the increase of the electric capacity of formation between the semiconductor conversion element that in the part of top, is provided with and signal routing 129 and 130.In addition, increased the degree of freedom of around wiring, drawing, for example, can reduce the electric capacity of formation between first signal routing 129 and secondary signal wiring 130 to realize providing the low noise radiation imaging apparatus of handling the high-speed mobile image by changing set position.In addition, thicker at the conductor width that makes wiring to realize reducing under the situation of the resistance that connects up, and for example have under the situation of the radiation detecting apparatus of the high-definition image of 50 microns to 160 microns pel spacing can taking, the effect that reduces electric capacity if two signal routings are formed by the metal level that differs from one another is bigger.

That is, radiation detecting apparatus adopts such structure: wherein when wiring quantity increases, a plurality of diaphragms can be set so that wiring and the electric capacity that can reduce to connect up to be set selectively in diaphragm.In addition, after being provided with first dielectric film of being made by organic material 106 and second dielectric film 109, have such situation: substrate does not carry out for example 300 ℃ or higher high-temperature process.In this case, grid wiring can be arranged in the zone that is placed between first dielectric film 106 and second dielectric film 109, and signal routing can be arranged in the zone that is placed between second dielectric film 109 and the 3rd dielectric film 115.In this case, the aluminium with less resistivity preferably is used as grid wiring.

(the 6th embodiment)

At first, the sixth embodiment of the present invention is described.

Accompanying drawing 18-22 is depicted as the equivalent circuit diagram of simplification of radiation imaging apparatus according to a sixth embodiment of the invention and the plan view and the cutaway view of pixel.

The main points of present embodiment are that the multiple conducting wires of signal routing is formed into a plurality of pixels of row, a plurality of continuous pixel in row is assigned to each lead of signal routing, and each lead of signal routing is connected with the thin-film transistor of the pixel of appointment in addition.

Accompanying drawing 18 is depicted as the equivalent circuit diagram of the simplification of radiation imaging apparatus according to a sixth embodiment of the invention.

Pixel region is divided into two districts, and the secondary signal wiring of reads image data in the zone of first signal routing of reads image data in the zone of triplex row six row from the part of top and six row of the triplex row from the part of bottom is set respectively.In addition, accompanying drawing 18 is depicted as by the signal processing circuit unit that is provided with on same side and the state of gate driver circuit unit controls.

In substrate 160, pixel is with the matrix-style setting, and TFT part 152 and semiconductor conversion element part 153 are coupled to each other in each pixel.Grid wiring 154, first signal routing 129 and secondary signal wiring 130 are connected to TFT part 152, are connected with semiconductor conversion element part 153 from the bias wiring 157 of common electrode drive device circuit unit 156.

The first embodiment difference shown in the 6th embodiment and the accompanying drawing 3 is that signal routing is divided into first signal routing 129 and secondary signal 130 two parts that connect up.First signal routing 129 connects with the TFT part 152 that the semiconductor conversion element part 153 of triplex row six row that are provided with in the part of top is connected, and secondary signal wiring 130 connects with the TFT part 152 that the semiconductor conversion element part 153 of triplex row six row that are provided with in the part of bottom is connected.The through hole 161 of the central part office of secondary signal wiring 130 by being arranged on substrate is connected with another metal level, and is plotted in around the signal processing circuit unit 150 that is provided with outside the substrate.

As a result, the signal of the semiconductor conversion element that is provided with in the next comfortable zone away from signal processing circuit unit 150 can be transmitted to the signal processing circuit unit 150 on a certain side that is arranged on substrate 160.Simultaneously, the quantity of the quantity of the TFT by signal routing being divided into a plurality of sections, can reducing a lead that is connected to signal routing and the part of intersecting with grid wiring for example, and can reduce the total capacitance of signal routing.In addition,, a plurality of signals can be read simultaneously, therefore high-speed driving can be carried out by driving simultaneously in the part of top and the grid wiring that is provided with in the section in the part of bottom.

Accompanying drawing 19 is the explanation schematic diagram of the pixel region in the substrate of radiation imaging apparatus and the relation between the peripheral circuit according to a sixth embodiment of the invention.

Accompanying drawing 19 is depicted as the connection status in such zone, and semiconductor conversion element is arranged in the substrate in this zone, signal processing circuit unit and gate driver circuit unit be arranged on substrate around.Accompanying drawing 19 be depicted as radiation detecting apparatus another structure example is set, semiconductor conversion element is divided into a plurality of sections and the signal routing of special use is provided with to each section, as shown in Figure 18 in this radiation detecting apparatus.

In accompanying drawing 19, the semiconductor conversion element that is provided with in substrate is divided into four sections of section 1-4, and the special signal wiring is set to each section.The secondary signal treatment circuit unit 163 that can obtain first signal processing circuit unit 162 of signal from two sections the part of top and can obtain signal from two sections the part of bottom is arranged on the outside of substrate.In addition, be provided with first grid drive circuit unit 164 and the second grid drive circuit unit 165 that is controlled at the gate electrode that is provided with in each section.Though be not presented in this accompanying drawing, but, be used for that voltage is imposed on the power supply of semiconductor conversion element or common electrode drive device circuit unit and be set at signal processing circuit unit 162 or 163 or gate driver circuit power supply 164 or 165, as indicated above.

By pixel region roughly being divided into four districts, the quantity of the TFT that is connected with a lead in the signal routing can be reduced to 1/4.As a result, particularly the electric capacity that forms between the source electrode of TFT part and gate electrode has been reduced, and therefore can reduce the total capacitance of signal routing.At this moment, even in the time of for example on semiconductor conversion element is arranged on this wiring, by organic material (they are dielectric films) being placed at least, still can reduce from the formed electric capacity of wiring section 2 to first signal processing circuit units 162, that draw around at the top part and the bottom part place of the locational wiring by this section 1.Therefore, the total capacitance of signal routing can be suppressed to lessly, guarantee that simultaneously the aperture of semiconductor conversion element is bigger.In addition, so that signal is sent to signal processing circuit simultaneously, also can carry out high-speed driving by four leads (from each section, selecting a lead) of while driving grid wiring.

As for grid wiring, first grid drive circuit unit 164 and second grid drive circuit unit 165 can be connected to each other by the grid wiring that is arranged on the substrate, perhaps can be from the center to the left side and the right side separated from one another.

Accompanying drawing 20 is depicted as the equivalent circuit diagram of the simplification of radiation imaging apparatus according to a sixth embodiment of the invention, and it is another example different with the example shown in the accompanying drawing 18.

Example difference shown in this example and the accompanying drawing 18 is that first signal routing 129 extends in the section of triplex row six row in the part of bottom, and first signal routing 129 is not connected with TFT in this section.This is because first signal routing 129 is all identical as far as possible with time constant with the total capacitance of secondary signal wiring 130.By adopt organic material placed on and under structure, can be suppressed to lessly with the electric capacity that forms on every side, form but can not fully eliminate electric capacity.Therefore, when the quantity of length change of connecting up or intersection changes, total capacitance change relevant with this wiring.The difference of total capacitance has changed the time constant and the wiring noise of wiring, has different characteristics from the image information of semiconductor conversion element in each section.

Therefore, such structure optimization is: wherein first signal routing 129 that reads signal from top section is placed between the organic material the bottom part of through hole 161 beginnings of office from central division, the influence around this organic material is difficult to be subjected to and formed less electric capacity.In addition, adopt such structure: wherein the secondary signal wiring 130 of reading signal from compresses lower section is placed between the organic material the top part of through hole 161 beginnings of office from central division, influence around this organic material is difficult to be subjected to and formed less electric capacity, and with the material that is used at first signal routing 129 of compresses lower section be same material.That is, first signal routing 129 and secondary signal wiring, 130 metal level switches them as the position in the upper and lower section of the through hole 161 on border.

As a result, the total capacitance of first signal routing 129 and secondary signal wiring 130 becomes and is equal to each other, and for example, the time constant of wiring and wiring noise are impartial in each section.Therefore, when making radiation irradiation, can avoid in each section image in different in nature incompatible sense etc. to image.

Accompanying drawing 21 is depicted as the plan view of the pixel of radiation detecting apparatus according to a sixth embodiment of the invention.

Accompanying drawing 21 is depicted as the plane design drawing of pixel portion of 2 row 2 row of effective pixel region, and wherein pixel is provided with in the mode of matrix, and the semiconductor conversion element and the TFT that radiation are converted to the signal of telecommunication in each pixel are coupled to each other.

Whole source electrodes 123 of four TFT being provided with all are connected with first signal routing 129 in the sections of two row * two row, and secondary signal connects up and 130 is connected with the source electrode of the TFT that is provided with in other section.At this, when forming source electrode 123, form first signal routing 129 simultaneously.Not with the section shown in the accompanying drawing 21 in the secondary signal wiring 130 that connects of TFT use the different metal level that on first signal routing 129, is provided with to form.

Accompanying drawing 22 is cutaway views of the line 22-22 intercepting in the accompanying drawing 21, shows the example of the situation of the signal routing that uses the metal level formation identical with the metal level of the source electrode of TFT and drain electrode.

Saved to the description of the common part of the part shown in the accompanying drawing 5.

The top part is depicted as semiconductor conversion element, and the bottom part is depicted as TFT.Semiconductor conversion element in the part of top is the MIS N-type semiconductor N conversion element that is made of the dielectric film 110 of the 4th metal level 108, semiconductor conversion element, the second high ohmic semiconductor layer 111, (as ohmic contact layer) second impurity semiconductor layer 112 and transparent electrode layer 113.Semiconductor conversion element can be carried out the opto-electronic conversion of light ratio such as visible light.The 5th metal level 114 is the bias wirings that voltage imposed on transparent electrode layer 113, and it is connected with common electrode drive device circuit unit outside being arranged on substrate.

First signal routing 129 shown in the accompanying drawing 21 is formed by second metal level 105 in the accompanying drawing 22, and is arranged in the dielectric film 102 and the zone between first dielectric film 106 that is placed in grid.Secondary signal wiring 130 is formed by the 3rd metal level 107 in the accompanying drawing 22, and is arranged in the zone that is placed between first dielectric film 106 and second dielectric film 109.Shown in the equivalent circuit diagram of the simplification of accompanying drawing 20, the lead of first signal routing 129 and secondary signal wiring 130 extends and is provided with so that make the electric capacity of first signal routing 129 and secondary signal wiring 130 identical.In this case, secondary signal wiring 130 is connected with the source electrode of the TFT of pixel in the zone except zone shown in the accompanying drawing 21, and is formed by second metal level 105.In addition, in the zone shown in the accompanying drawing 21, secondary signal wiring 130 is not connected with TFT, and is formed by the 3rd metal level 107.

(the 7th embodiment)

The 7th embodiment provides and has handled mobile image and each pixel comprises two transistorized radiation detecting apparatus that are used to realize high-speed driving.The main points of present embodiment are that pixel is provided with two-dimensionally, each pixel comprises a semiconductor conversion element and two TFT that are coupled with this semiconductor conversion element, for example TFT is arranged in such a way in pixel, and one of them TFT is used for electric charge carrier to be shifted, and another TFT is used to reset.Present embodiment is configured to obtain at high speed image and can be reset.Preferred use at a high speed (charge carrier) polysilicon of shifting as the material of TFT, because electric charge carrier shifts and resetting of electric charge carrier can be by instantaneous execution.At this moment, under the situation that the grid wiring of TFT is made such as chromium, titanium, tantalum etc. by refractory metal, the cloth line resistance is higher.Therefore, be made into when thicker in wiring width, it is big that wiring capacitance becomes.Therefore, grid wiring is set on the TFT, and dielectric film is placed between this grid wiring and the TFT, therefore can use to have the material of less resistive rate such as aluminium, copper etc.At this moment, the signal routing or the wiring that resets that are connected with the source electrode or the drain electrode of TFT part also are arranged on the grid wiring, and dielectric film places between them.In addition, semiconductor conversion element is set on these wirings, and dielectric film is arranged between them.That is gate electrode, source electrode and the drain electrode of TFT part, have been formed.After this, formed dielectric film.After this, form a wiring in grid wiring and the signal routing, and after having formed dielectric film, formed another wiring in grid wiring and the signal routing.Then, after having formed dielectric film once more, semiconductor conversion element is set, can reduces cloth line resistance and wiring capacitance thus.Therefore, can provide the more low noise radiation imaging apparatus that can drive at a relatively high speed.Therefore, the dielectric film with lower dielectric constant and thicker thickness is preferred for this three dielectric films.For example, under the situation of using organic insulating film, can be reduced at each TFT part, grid wiring, signal routing, the electric capacity that resets between wiring and the semiconductor conversion element, a kind of lower noise and can be with the radiation imaging apparatus of higher speed drive of having can be provided.

(the 8th embodiment)

Then, the eighth embodiment of the present invention is described.

Be respectively plan view and cutaway view thereof shown in the accompanying drawing 25 and 26 according to the pixel of the radiation detecting apparatus of the eighth embodiment of the present invention.

The main points of present embodiment are that the quantity of a plurality of dielectric films is 3 or bigger, and each quantity that is placed in the zone between the dielectric film is two or more, and each wiring is formed by different metal levels.

Accompanying drawing 25 is depicted as the plan view according to the pixel of the radiation detecting apparatus of the eighth embodiment of the present invention.

Accompanying drawing 25 is depicted as the plane design drawing by the pixel portion of two row * two row formations of the effective pixel region that comprises pixel, pixel is arranged on the dielectric substrate in the mode of matrix, each pixel comprise with radiation be converted to the signal of telecommunication semiconductor conversion element and with the switch element of this conversion element coupling.

Present embodiment is that with the embodiment difference shown in the accompanying drawing 1 gate electrode 136 and grid wiring 122 are formed in the different metal levels, and is connected to each other in each pixel by through hole 138.

Accompanying drawing 26 is depicted as the cutaway view that is intercepted along line 26-26 in the accompanying drawing 25.The top part has shown semiconductor conversion element, and the bottom part has shown TFT.Accompanying drawing 26 is depicted as by using the example of the situation that identical metal level forms signal routing as source electrode and the drain electrode of TFT.

The MIS N-type semiconductor N conversion element that semiconductor conversion element in the part of top is made of the 5th metal level 114, second dielectric film 110, the second high ohmic semiconductor layer 111, (as ohmic contact layer) second impurity semiconductor layer 112 and transparent electrode layer 113.Semiconductor conversion element can be carried out the opto-electronic conversion of light ratio such as visible light.The 6th metal level 118 is the bias wirings that apply voltage to transparent electrode layer 113, and is connected with common electrode drive device outside being arranged on substrate.

Form by the 4th metal level 108 shown in the accompanying drawing 26 at the signal routing 121 shown in the accompanying drawing 25, and be arranged in the zone that is placed between second dielectric film 109 and the 3rd dielectric film 115.In addition, formed by the first metal layer 101 shown in the accompanying drawing 26 at the gate electrode 136 shown in the accompanying drawing 25, grid wiring 122 is formed by the 3rd metal level 107 (dotted line shown in second dielectric film 109 in view).In addition, gate electrode 136 is connected by through hole (dotted portion shown in first dielectric film 106 in the accompanying drawings) with grid wiring 122.Therefore, first dielectric film 106, second dielectric film 109 and the 3rd dielectric film 115 use the dielectric film of being made by organic material separately.As for organic material, preferably have higher thermal endurance and have from about 2.5 the materials (such as polyimide resin, acrylic resin etc.) of less relative dielectric constant to about 4 the scope.For example the high temperature inorganic material that forms under with the temperature in the scope from 300 ℃ to 350 ℃ when grid wiring is formed by the aluminium wiring with lower resistivity forms gate insulating film 102 (it is a TFT dielectric film partly) thereby forms the TFT with higher reliability, and this structure is preferred.

At this, suppose that the thickness of first dielectric film 106 and thickness and relative dielectric constant that relative dielectric constant is T1 and ε 1, the second dielectric film 109 respectively are respectively T2 and ε 2, and the thickness of the 3rd dielectric film 115 and relative dielectric constant are T3 and ε 3 respectively.From accompanying drawing 25, can learn, maximum area in the area of the cross section of each conductive metal film is the area (area S1) between grid wiring 122 and lower electrode 126, next area is the area (area S2) between signal routing 121 and lower electrode 126, and last then area is the area (area S3) between signal routing 121 and gate electrode 122.That is, the capacitor C 1 of the per unit area that is formed by each cross section, C2 and C3 are provided in to satisfy and concerns S1〉S2〉during S3, concern C1＜C2＜C3 establishment.

When the thickness of dielectric film and relative dielectric constant are provided with in mode as indicated above, can be suppressed to lessly by the electric capacity that metal level forms, the thickness of dielectric film is formed thinner as far as possible simultaneously.

Hereinbefore, first to the 8th embodiment of the present invention has been described.Hereinafter, the package example of the radiation imaging apparatus that uses radiation detecting apparatus of the present invention is described, and the application example of radiation imaging apparatus in radiation image-forming system.

Accompanying drawing 23A and 23B are depicted as the schematic diagram of the package example of the radiation imaging apparatus that uses radiation detecting apparatus of the present invention (X ray checkout equipment).Accompanying drawing 23A is depicted as plan view, and accompanying drawing 23B is depicted as cutaway view.

A plurality of semiconductor conversion element and a plurality of TFT as photo-electric conversion element are formed on the sensor substrate 6011, and connect flex circuit substrate 6010, shift register SR1 is installed on this flex circuit substrate 6010 and detects integrated circuit (IC).The opposition side of flex circuit substrate 6010 is connected with PCB2 with circuitry substrate PCB1.A plurality of sensor substrate 6011 attached in the substrate 6012 so that constitute large-sized switching device.Be used for protecting the stereotype 6013 of avoiding the X ray influence at the circuit element 6019 and the memory 6014 of treatment circuit 6018 to be installed under the substrate 6012.The scintillator (luminescent coating) 6030 that is used for X ray is converted to visible light for example the CsI evaporation in sensor substrate 6011.Whole being contained in the housing of making by the carbon fiber shown in the accompanying drawing 23B 6020.

Accompanying drawing 24 is depicted as the view of the application example of radiation imaging apparatus in radiation image-forming system that uses radiation detecting apparatus of the present invention.

The X ray 6060 that produces by X-ray tube 6050 sees through the chest 6062 of patient or object 6061 to enter the radiation imaging apparatus 6040 that scintillator (luminescent coating) has been installed.The information of patient 6061 body interior is comprised in the X ray that enters.Scintillator is luminous according to entering of X ray, and light is changed to be gathered as electrical information by photoelectricity ground.This information translation is a digital information, and the image processing of digital information is carried out by the image processor 6070 as signal processing apparatus.Treated information is observed on display 6080, and this display 6080 is installed in the control room, and it is a display unit.

In addition, information can be transferred to So Far Away such as telephone wire 6090 by transmission and processing unit.Information may be displayed on the display 6081, and display 6081 is in the display unit of another place such as the clinic, and information can be stored in tape deck such as in the CD.Therefore, the doctor at So Far Away can diagnose.In addition, by film processor 6100 (it is a tape deck), can record the information on the film (a kind of recording medium).

Owing to can make many obviously different embodiment of the present invention under the premise without departing from the spirit and scope of the present invention, therefore it should be understood that the present invention is not limited to certain embodiments, but be as the criterion with the qualification in the claim.

The present invention can be applicable to the radiation detecting apparatus of the X ray of medical application or nondestructive inspection (NDI).In addition, the present invention can be applicable to the radiation detecting apparatus of convert light such as visible light etc., particularly is applied to comprise the radiation detecting apparatus of large-area photoelectric conversion region.

The application requires the priority of Japanese patent application 2005-251609 number of the priority of Japanese patent application 2005-251610 number of on August 31st, 2005 application and application on August 31st, 2005, in this mode with incorporated by reference it is incorporated in this application.

Claims (14)

1. radiation detecting apparatus comprises:

The pixel that comprises switch element and conversion element, said switch element is arranged on the dielectric substrate, said conversion element is arranged on the said switch element radiation is converted to electric charge carrier, wherein said switch element and said conversion element are connected to each other, and said pixel is arranged on the said dielectric substrate two-dimensionally in the mode of matrix;

The grid wiring that is connected with each switch element in the line direction setting of said dielectric substrate upper edge publicly;

The signal routing that is connected with each switch element along the column direction setting publicly; And

Be arranged on a plurality of dielectric films between said switch element and the said conversion element, at least one in wherein said grid wiring and the said signal routing is configured to place between said a plurality of dielectric film.

2. according to the radiation detecting apparatus of claim 1, wherein the multiple conducting wires of said signal routing is set to the said a plurality of switch elements that list, and the said switch element of identical quantity is connected with in the said multiple conducting wires of a said signal routing that lists every.

3. according to the radiation detecting apparatus of claim 1, wherein said switch element is based on by the transfer switch element of said conversion element to the electric charge carrier of the conversion generation of radiation, an electrode of described transfer switch element is connected to described signal routing, another electrode of described transfer switch element is connected to described conversion element, gate electrode be connected to first grid wiring and

Said radiation detecting apparatus further comprises:

Be connected to the reset switch element of said conversion element, wherein a plurality of said reset switch element of delegation is connected with the second grid wiring publicly, an electrode of described reset switch element is connected to the wiring that resets, another electrode of described reset switch element is connected to described conversion element, and gate electrode is connected to the second grid wiring; With

The wiring that resets that on line direction or column direction, jointly is connected with said a plurality of reset switch elements.

4. according to the radiation detecting apparatus of claim 1, wherein said a plurality of dielectric films are by three layers or more multi-layeredly constitute, and each said wiring is made by the metal level that is arranged between the said different dielectric film.

5. according to the radiation detecting apparatus of claim 2, the zone that wherein is arranged with a plurality of pixels comprises a plurality of sections that extend along each row, and a plurality of switch elements that link to each other with each signal routing are arranged along each row in each section.

6. according to the radiation detecting apparatus of claim 1, wherein the thickness of said a plurality of dielectric films differs from one another.

7. according to the radiation detecting apparatus of claim 1, the boundary position of the end of each dielectric film in wherein said a plurality of dielectric films differs from one another, and total film thickness staged ground changes.

8. according to the radiation detecting apparatus of claim 4, the electrode of wherein said grid wiring, said signal routing and said conversion element intersects two-dimensionally each other and is placed with said dielectric film therebetween, is formed thickly more along with intersecting the area big more said dielectric film that becomes.

9. radiation detecting apparatus according to Claim 8, the relative dielectric constant of wherein considering material forms said a plurality of dielectric films has certain thickness.

10. according to the radiation detecting apparatus of claim 1, comprise further radiation is converted to light wavelength conversion layer in the wavelength zone that can carry out opto-electronic conversion that wherein said conversion element is the element that light is converted to the signal of telecommunication.

11. according to the radiation detecting apparatus of claim 1, wherein said conversion element is the element that directly radiation is converted to the signal of telecommunication.

12. a radiation imaging apparatus comprises the radiation detecting apparatus according to claim 5, further comprises the signal processing circuit that is connected to said signal routing, wherein

Said signal routing is set to away from connecting described locations of pixels described signal processing circuit, that comprise described switch element always.

13. a radiation imaging apparatus comprises the radiation detecting apparatus according to claim 5, further comprises the signal processing circuit that is connected with said signal routing, wherein

Whole signal routing is set to away from connecting described locations of pixels described signal processing circuit, that comprise described switch element always.

14. a radiation image-forming system comprises:

Radiation detecting apparatus according to claim 10 or 11;

Be used to handle signal processing apparatus from the signal of said radiation detecting apparatus;

Be used to write down tape deck from the signal of said signal processing apparatus;

Be used to show display unit from the signal of said signal processing apparatus;

Be used to send transmission and processing unit from the signal of said signal processing apparatus; With

Be used to produce the radiation source of radiation.

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