CN103972249B - Active matrix image sensing panel and active matrix image sensing device - Google Patents
Active matrix image sensing panel and active matrix image sensing device Download PDFInfo
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- CN103972249B CN103972249B CN201310046161.XA CN201310046161A CN103972249B CN 103972249 B CN103972249 B CN 103972249B CN 201310046161 A CN201310046161 A CN 201310046161A CN 103972249 B CN103972249 B CN 103972249B
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Abstract
The invention discloses an active matrix image sensing panel which comprises a substrate and an image sensing pixel. The image sensing pixel is arranged on the substrate and is provided with a scanning line, a data line, a photosensitive element and a thin-film transistor element. The data line and the scanning line are staggered on each other. The photosensitive element is provided with a first end point electrode and a second end point electrode, and voltages of the first end point electrode are higher than voltages of the second end point electrode. The thin-film transistor element is provided with a first electrode, a second electrode, a first gate and a second gate, the first electrode is electrically connected with the data line, the second electrode is electrically connected with the first end point electrode of the photosensitive element, the first gate is electrically connected with the scanning line, and the second gate is electrically connected with the first end point electrode or the second end point electrode of the photosensitive element. The invention further discloses an active matrix image sensing device. The active matrix image sensing panel and the active matrix image sensing device have the advantage that the problem of image sensing distortion due to current leakage of an existing active matrix image sensing panel and an existing active matrix image sensing device can be solved.
Description
Technical field
The present disclosure generally relates to a kind of image sensing panel and device, especially in regard to a kind of active matrix image sensing panel
And device.
Background technology
Traditional X-ray imaging technique system receives the exposure of X-ray and is imaged using imaging film, but in recent years, due to quasiconductor
The development of technology, X-ray imaging technique also evolves to using flat digitisation image sensing panel to be imaged, i.e., so-called number
Position pneumoradiography（Digital radiography, DR）Technology.
Hereby the principle of numerical digit pneumoradiography technology is summarized as follows.When X-ray is entered in Image sensor apparatus, can first pass through
One scintillation crystal layer（scintillator）, and mat its X-ray is changed into into visible ray, then will be sensed by photo-sensitive cell
Visible ray changes into the signal of telecommunication, and thin-film transistor element is connected to afterwards, then is read from data wire, then after image processing then
Become image.Wherein, charge coupled cell of the photo-sensitive cell from script（charge coupled device,CCD）Also proceed to
The photodiode of silicon substrate.In current technology, scintillation crystal layer is also not required to, but directly X-ray is changed into into the signal of telecommunication.
However, known conventional thin-film transistor element is, for example, metal oxide thin-film transistor, and photo-sensitive cell example
Such as it is NIP type amorphous silicon photo diodes.Wherein, the grid of metal oxide thin-film transistor typically system operates in the electricity of negative polarity
Pressure（Such as -5V）, and the polarity of the bias of NIP type amorphous silicon photo diodes is also negative polarity.Therefore, when photo-sensitive cell irradiation it
Afterwards produced electrons are moved toward the bottom electrode of photo-sensitive cell, and then are made under the current potential of source electrode of bottom electrode and thin film transistor (TFT)
Drop.But, if the current potential of the source electrode of bottom electrode and thin film transistor (TFT) because the light of high intensity irradiates continuous decrease so that grid
Potential difference between source electrode persistently rises, and then more than the critical voltage of thin film transistor (TFT)（Threshold voltage）When,
Then thin film transistor (TFT) will be switched on and cause source electrode to start electric leakage to data wire, thus, image processing module is processed and acquirement shadow
During picture, will cause to sense the problem of distortion.
Therefore, how a kind of active matrix image sensing panel and device are provided, active matrix image sense can be avoided
The leakage phenomenon that panel and device are produced is surveyed, the problem of image sensing distortion is caused, it has also become one of important topic.
The content of the invention
In view of above-mentioned problem, the purpose of the present invention is to provide a kind of leakage phenomenon for avoiding and producing, and causes image
The active matrix image sensing panel and active matrix Image sensor apparatus of the problem of sensing distortion.
It is, up to above-mentioned purpose, according to a kind of active matrix image sensing panel of the present invention substrate and a shadow to be included
As sensor pixel.Image sensing pixel is arranged on substrate, and with scan line, a data wire, a photo-sensitive cell and
Thin-film transistor element.Data wire is crisscross arranged with scan line.Photo-sensitive cell has a first end point electrode and one second end points
Electrode, first end point electrode voltage is more than the second end points electrode voltage.Thin-film transistor element have a first electrode, one second
Electrode, a first grid and a second grid, first electrode and electrode data line is electrically connected with, second electrode and the first of photo-sensitive cell
End points electrode is electrically connected with, and first grid and scan line are electrically connected with, the first end point electrode of second grid and photo-sensitive cell or
Second end points electrode is electrically connected with.
It is, up to above-mentioned purpose, according to a kind of active matrix Image sensor apparatus of the present invention active matrix shadow to be included
As sensing panel and a processing module.Image sensing pixel is arranged on substrate, and with scan line, a data wire, one
Photo-sensitive cell and a thin-film transistor element.Data wire is crisscross arranged with scan line.Photo-sensitive cell has first end point electricity
Pole and one second end points electrode, first end point electrode voltage is more than the second end points electrode voltage.Thin-film transistor element has one
First electrode, a second electrode, a first grid and a second grid, first electrode and electrode data line is electrically connected with, second electrode
With the first end point electrode electric connection of photo-sensitive cell, first grid and scan line electric connection, second grid and photo-sensitive cell
First end point electrode or the second end points electrode be electrically connected with.Processing module is swept respectively with active matrix image sensing panel
Retouch line and electrode data line is electrically connected with.
In one embodiment, the second end points electrode is electrically connected to a reference voltage, and the polarity system of reference voltage is negative.
In one embodiment, photo-sensitive cell is led with more one first semiconductor layer, extrinsic semiconductor's layer and one the second half
Body layer, extrinsic semiconductor's layer is folded between the first semiconductor layer and the second semiconductor layer.
In one embodiment, the first semiconductor layer is electrically connected with, the second quasiconductor with the second end points electrode directly contact
Layer with first end point electrode directly contact and be electrically connected with.
In one embodiment, thin-film transistor element has more a channel layer, and channel layer includes monoxide quasiconductor, oxygen
Compound quasiconductor includes oxide, and oxide includes at least one of indium, zinc and stannum.
In one embodiment, second gate polar system is electrically connected with through a conductive layer and the second end points electrode.
In one embodiment, second grid is on thin-film transistor element by extending on photo-sensitive cell, and with second
End points electrode directly contact.
In one embodiment, second grid and first end point electrode system are same layer, and at least partly first end point electrode
Extended on thin-film transistor element by photo-sensitive cell.
In one embodiment, at least part of first end point electrode is extended on thin-film transistor element by photo-sensitive cell,
And with second grid directly contact.
From the above, because in the active matrix image sensing panel and device of the present invention, the of thin-film transistor element
One electrode and electrode data line is electrically connected with, the first end point electrode of second electrode and photo-sensitive cell is electrically connected with, first grid with sweep
Line electric connection is retouched, and second grid is electrically connected with the first end point electrode or the second end points electrode of photo-sensitive cell.Thereby, may be used
The critical voltage of thin-film transistor element is improved, and is irradiated by light in photo-sensitive cell and is made between first grid and second electrode
Potential difference raise when, thin-film transistor element is not switched on and leakage phenomenon is occurred.Therefore, the present invention can avoid master
The problem of the image sensing distortion caused by leakage phenomenon that dynamic matrix type image sensing panel and device are produced.
Description of the drawings
Figure 1A is an image sensing pixel in a kind of active matrix image sensing panel of present pre-ferred embodiments
Structural representation.
Figure 1B is the schematic equivalent circuit of the image sensing pixel of Figure 1A.
Fig. 2 in the active matrix image sensing panel of the present invention, the voltage of thin-film transistor element and the song of electric current
Line schematic diagram.
Fig. 3 and Fig. 4 A are respectively in the active matrix image sensing panel of another aspect of present pre-ferred embodiments, one
The structural representation of individual image sensing pixel；Fig. 4 B are the schematic equivalent circuit of the image sensing pixel of Fig. 4 A.
Fig. 4 C are shown in the active matrix image sensing panel of the another aspect of present pre-ferred embodiments, an image
The structural representation of sensor pixel.
Fig. 5 is a kind of function block schematic diagram of active matrix Image sensor apparatus of present pre-ferred embodiments.
1st, 1a～1c, 21：Active matrix image sensing panel
11：Substrate
2：Active matrix Image sensor apparatus
22：Processing module
C1：Conductive layer（Second grid）
C2～C3：Conductive layer
DL：Data wire
E1：First end point electrode
E2：Second end points electrode
E3：First electrode
E4：Second electrode
ES：Etch stop layer
G：（First）Grid
I1～I3：Insulating barrier
I4：Protective layer
O1～O3：Through hole
P：Photo-sensitive cell
P1：First semiconductor layer
P2：Extrinsic semiconductor's layer
P3：Second semiconductor layer
SL：Scan line
T：Thin-film transistor element
T11：Gate dielectric
T12：Channel layer
V：Reference voltage
Specific embodiment
Hereinafter with reference to correlative type, illustrate according to the active matrix image sensing panel and dress of present pre-ferred embodiments
Put, wherein identical element will be illustrated with identical reference marks.
Referring to shown in Figure 1A and Figure 1B, wherein, Figure 1A for present pre-ferred embodiments a kind of active matrix
In image sensing panel 1, the structural representation of an image sensing pixel, and Figure 1B is the equivalent of the image sensing pixel of Figure 1A
Circuit diagram.
Active matrix image sensing panel 1 is to be arranged on a substrate 11 including plural image sensing pixel.Implementing
On, substrate 11 can be a light-permeable material, e.g. glass, quartz or the like, plastic cement, rubber, glass fibre or other
Macromolecular material, preferably can be a borate alkali-free glass substrate（alumino silicate glass substrate）.
Substrate 11 also can be a light tight material, e.g. metal-glass fiber composite plate or metal-ceramic composite plate.
As illustrated in figures ia and ib, in the grade image sensing pixel, at least one of image sensing pixel has
Scan line SL, a data wire DL, a photo-sensitive cell P, a thin-film transistor element T and a conductive layer C1.In addition, this enforcement
The image sensing pixel of example can more have a conductive layer C2, an insulating barrier I1, an insulating barrier I2, an insulating barrier I3 and a protective layer
I4.Wherein, scan line SL, data wire DL, photo-sensitive cell P, thin-film transistor element T, conductive layer C1, C2, insulating barrier I1～I3
And protective layer I4 systems are arranged on substrate 11.The person of should be noted, Figure 1A only depicts 1 image sensing pixel, with regard to active matrix
For image sensing panel 1, it can have multiple image sensing pixels to arrange in array, and a plurality of data lines DL, multi-strip scanning
Line SL systems are crisscross arranged.
Data wire DL is crisscross arranged with scan line SL.Photo-sensitive cell P has a first end point electrode E1 and one second end points
Electrode E2.First end point electrode E1 or the second end points electrode E2 can be a transparency electrode, and its material for example can be tin indium oxide
（ITO）.In addition, photo-sensitive cell P is with more one first semiconductor layer P1, essential（Intrinsic）Semiconductor layer P2 and 1
Two semiconductor layer P3, layer P2 systems of extrinsic semiconductor are located between the first semiconductor layer P1 and the second semiconductor layer P3.Wherein, first
Semiconductor layer P1 and the second end points electrode E2 directly contacts and be electrically connected with, and the second semiconductor layer P3 and first end point electrode E1
Directly contact and be electrically connected with.In this, photo-sensitive cell P systems are the optical diode of a NIP types, and with non-crystalline silicon（a-Si）Thin film sinks
Product is made.In the present embodiment, the first semiconductor layer is, for example, P-type semiconductor, and the second semiconductor layer is N-type semiconductor, when
So it is not limited thereto.Additionally, as shown in Figure 1B, the second end points electrode E2 is electrically connected to a reference voltage V, reference voltage V
The biass of photo-sensitive cell P mono- can be provided, and for reverse voltage so that first end point electrode E1 voltages are more than the second end points electrode electricity
Pressure E2.
Thin-film transistor element T is, for example, N-type amorphous silicon film transistor, and with a grid G, a gate dielectric
T11, a channel layer T12, first electrode E3 and second electrode E4.Grid G is arranged on substrate 11, and electric with scan line SL
Property connection.The material system of grid G is metal（For example, aluminum, copper, silver, molybdenum or titanium）Or the single or multiple lift that its alloy is constituted
Structure.Part is to transmit the wire of drive signal, it is possible to use with grid G with layer and same processing procedure structure, and electricity each other
Property be connected, such as scan line.Gate dielectric T11 is arranged in grid G, and gate dielectric T11 systems can be organic material example
It is such as organo-siloxane compound, or inorganic is, for example, silicon nitride, silicon oxide, silicon oxynitride, carborundum, aluminium oxide, oxidation
The multiple structure of hafnium or above-mentioned material.Gate dielectric T11 need to completely cover grid G, and selectable portion or whole covering bases
Plate 11.
The position of channel layer T12 opposing gate G is arranged on gate dielectric T11.On the implementation, channel layer T12 is for example
Monoxide quasiconductor can be included.Wherein, aforementioned oxide semiconductor include oxide, and oxide include indium, gallium, zinc and
One of stannum, such as but not limited to indium gallium zinc（Indium Gallium Zinc Oxide,IGZO）, so that thin film
Transistor unit T is a metal oxide thin-film transistor.Wherein, metal oxide thin-film transistor has low-leakage current（Leakage
Electric current is between 10-14 amperes to 10-18 amperes）, high electronics energy gap（About 3.1 electron-volts）And it is insensitive to light irradiation etc. special
Property, it is a gain-type（Enhancement mode）Transistor.
First electrode E3 is respectively arranged on channel layer T12 with second electrode E4, and first electrode E3 and second electrode E4
Contact with channel layer T12 respectively, when the channel layer T12 of thin-film transistor element T is not turned on, both are electrically isolated.Wherein,
First electrode E3 is, for example, the drain electrode of thin-film transistor element T, and is electrically connected with data wire DL, and second electrode E4 is thin film
The source electrode of transistor unit T, and be electrically connected with the first end point electrode E1 of photo-sensitive cell P.It is to pass through to be arranged at insulation in this
One of the upper through hole O1 of layer I1 and insulating barrier I2, and make toward the direction extension of thin-film transistor element T through first end point electrode E1
First end point electrode E1 is electrically connected with second electrode E4.First electrode E3 can be metal with the material of second electrode E4（For example
Aluminum, copper, silver, molybdenum or titanium）Or the single or multiple lift structure that its alloy is constituted.Additionally, part is to transmit leading for drive signal
Line, it is possible to use with first electrode E3 and second electrode E4 with layer and same processing procedure structure, such as data wire.
It is noted that first electrode E3 of the thin-film transistor element T of the present embodiment（Hereinafter also known as drain）With
Second electrode（Below it is also known as source electrode）Also may be disposed at an etch-stop（etch stop）On layer ES, and source electrode and drain electrode
The opening of one end system difference self etching stop layer ES is contacted with channel layer T12.Wherein, etch stop layer ES systems can be organic material
For example, organo-siloxane compound, or single-layer inorganic material for example silicon nitride, silicon oxide, silicon oxynitride, carborundum, aluminium oxide,
Hafnium oxide or the multiple structure of above-mentioned material combination.But, in other examples, also source electrode can directly be set with drain electrode
It is placed on channel layer T12, without etch stop layer ES.
Conductive layer C1 systems are oppositely arranged with grid G, and the first end point electrode E1 or second of conductive layer C1 and photo-sensitive cell P
End points electrode E2 is electrically connected with.In the present embodiment, conductive layer C1 systems are located on grid G.Wherein, grid G is referred to as thin film crystalline substance
The first grid of body tube elements T, conductive layer C1 is referred to as the second grid of thin-film transistor element T, and first grid（Grid G）With
Second grid（Conductive layer C1）System sets relatively, and insulating barrier I1 systems are arranged at conductive layer C1（Second grid）With first electrode E3
Or between second electrode E4.In addition, insulating barrier I2 is completely covered conductive layer C1, and insulating barrier I3 is arranged on insulating barrier I2.This
Outward, conductive layer C1 systems and are prolonged through conductive layer C2 through through hole O2 one of is located on insulating barrier I2 and insulating barrier I3 by through hole O2
Extend on the second end points electrode E2, make conductive layer C1（Second grid）It is electrically connected with the second end points electrode E2.Wherein, conductive layer
C2 also may be connected to reference voltage V, to provide the biass of photo-sensitive cell P mono-（Figure 1A does not show）.Conductive layer C1, C2 can be printing opacity
（Such as ITO）Or it is light tight（Such as metal or alloy）Material constituted.In this, conductive layer C1 is, for example, a metal level, and
The material system of conductive layer C2 is by taking transparency conducting layer as an example.In addition, the material of insulating barrier I1 is, for example, silicon oxide（SiOx）, insulating barrier
The material of I2 is, for example, silicon nitride（SiNx）, and the material of insulating barrier I3 for example includes silicon nitride（SiNx）Or tetrafluoroethene-complete
Fluoroalkyloxy vinyl ether co-polymer（Polyfluoroalkoxy, PFA）.Additionally, protective layer I4 is arranged at thin film transistor (TFT) unit
On part T and photo-sensitive cell P, and on conductive layer C2 and insulating barrier I3.In this, the material of protective layer I4 can be with insulating barrier I3
Material it is identical, and for example can be comprising silicon nitride or tetrafluoroethylene-perfluoro alkoxy vinyl ethers copolymer.
In addition, refer to shown in Fig. 2, it is thin film transistor (TFT) unit in the active matrix image sensing panel 1 of the present invention
The voltage of part T and the curve synoptic diagram of electric current.In this, abscissa is grid G（First grid）Voltage, and ordinate is for regular
Drain current after change.
In the present embodiment, because in grid G（First grid）On have a conductive layer C1（Second grid）, and conductive layer
The second end points electrode E2 of C1 and photo-sensitive cell P is electrically connected with.In addition, the second end points electrode E2 is electrically connected to reference voltage V,
And reference voltage V is the bias of photo-sensitive cell P, and the polarity of voltage of reference voltage V is negative so that first end point electrode E1 voltages
More than the second end points electrode E1 voltages.By the conductive layer C1 with negative polarity（Second grid）, can be by thin-film transistor element T
Channel layer T12 after passage（Between back channel, i.e. channel layer T12 and etch stop layer ES）The electronics accumulated is led
Draw, can thereby improve the critical voltage of thin-film transistor element T（Threshold voltage）.In this, by conductive layer C1
To improve the critical voltage of thin-film transistor element T, can also claim this thin-film transistor element T that there is bigrid（dual-gate）
Design（But in fact, the original function of grid Gs of the conductive layer C1 not with thin-film transistor element T）.
As shown in Fig. 2 when conductive layer C1 is connected with the reference voltage V of negative polarity, and its magnitude of voltage it is less and less when（For example
By 0, -1V ..., -10V）, the grid voltage of thin-film transistor element T and the curve of drain current will be made to turn right side shifting, mat
This, can improve the critical voltage of thin-film transistor element T（Such as critical voltage up increases to about 6V by close 0V）.Citing
For, when the magnitude of voltage that reference voltage V is is -10V, reference voltage V is connected to by conductive layer C1, make conductive layer C1's
Voltage is also -10V, can improve the critical voltage of thin-film transistor element T to+6V（More than）.Therefore, when photo-sensitive cell P irradiations
Electronics produced afterwards toward first end point electrode E1 and thin-film transistor element T second electrode E4 move when, although can make
The current potential of second electrode E4 of thin-film transistor element T declines, and then makes grid G and second electrode E4（Source electrode）Between current potential
Difference VGS persistently rises（I.e. negative value is less and less）But, because the critical voltage of thin-film transistor element T is because conductive layer C1's
Arrange and improve, therefore thin-film transistor element T will not be switched on, therefore, thin-film transistor element T does not have showing for leakage current
As.
Additionally, active matrix image sensing panel 1 can further include a wavelength regulating layer（Figure does not show）, it is to be arranged at
On image sensing pixel.Wherein, wavelength regulating layer can be a scintillation crystal layer（scintillator）, to by the light of income
Line is converted to the light of specific wavelength, for example, X-ray is converted into into visible ray, photosensitive with sharp photo-sensitive cell P.Certainly, in photosensitive unit
In the case that X-ray directly can be changed into the signal of telecommunication by part P, wavelength regulating layer can be omitted.
In addition, refer to shown in Fig. 3, it is the active matrix image sensor surface of another aspect of present pre-ferred embodiments
In plate 1a, the structural representation of an image sensing pixel.
Fig. 3 primary difference is that with Figure 1A, and in the structure of the image sensing pixel of Fig. 3, conductive layer C1 is simultaneously not through another
The second end points electrode E2 of one conductive layer and photo-sensitive cell P is electrically connected with, but conductive layer C1 by thin-film transistor element T on
Extend directly on photo-sensitive cell P, and with the second end points electrode E2 directly contacts.In other words, through hole O2 systems are formed at insulation
On layer I2, I3, and conductive layer C1 systems are arranged in through hole O2, with by extending directly to photosensitive unit on thin-film transistor element T
On part P, to be directly electrically connected with the second end points electrode E2 directly contacts.Wherein, conductive layer C1 systems are the material of light-permeable,
And may be, for example, tin indium oxide（ITO）.
In addition, refer to shown in Fig. 4 A and Fig. 4 B, wherein, Fig. 4 A are the active square of the another aspect of present pre-ferred embodiments
In configuration image sensing panel 1b, the structural representation of an image sensing pixel, and Fig. 4 B are the image sensing pixel of Fig. 4 A
Schematic equivalent circuit.
Primary difference is that with Figure 1A and Figure 1B, in the active matrix image sensing panel 1b of Fig. 4 A and Fig. 4 B,
Conductive layer C1 and the structure that first end point electrode E1 systems are same layer so that conductive layer C1（Second grid）With photo-sensitive cell P it
First end point electrode E1 is electrically connected with.It may also be said that first end point electrode E1 extends to thin film transistor (TFT) by photo-sensitive cell P
On element T, by first end point electrode E1 as the conductive layer on thin-film transistor element T（Actually can lead without arranging
Electric layer）, therefore so that photo-sensitive cell P is located on thin-film transistor element T.In addition, arranging another leading on photo-sensitive cell P
Electric layer C3, and conductive layer C3 may be connected to reference voltage V, and to provide bias photo-sensitive cell P is given.In other enforcement aspects,
Also can only extend the first end point electrode E1 of photo-sensitive cell P, and the other parts of photo-sensitive cell P are not arranged at into thin film transistor (TFT)
On element T.
When entering photo-sensitive cell P due to light, photo-sensitive cell P can be excited and electronics electricity hole pair is produced, and by reference to electricity
Pressure V applies the bias of a negative polarity and gives photo-sensitive cell P so that electronics electricity hole is to separating.Therefore, after photo-sensitive cell P irradiations
Produced electronics is moved toward the first end point electrode E1 of photo-sensitive cell P, and then can make first end point electrode E1 and film crystal
The current potential of second electrode E4 of tube elements T declines.This enforcement aspect system is by the first end point electrode E1 of photo-sensitive cell P because of irradiation
The current potential of generation declines（Reverse voltage）It is loaded directly in the conductive layer C1 of thin-film transistor element T tops（Now, conductive layer
C1 is same layer structure with first end point electrode E1 systems）, thin-film transistor element T is given with the voltage for dynamically providing negative polarity,
Can equally make the grid voltage of thin-film transistor element T and the curve of drain current turn right side shifting, can thereby improve thin film brilliant
The critical voltage of body tube elements T, makes thin-film transistor element T not to be switched on and produce leakage phenomenon.
In addition, refer to shown in Fig. 4 C, it is the active matrix image sensing of the another aspect of present pre-ferred embodiments
In panel 1c, the structural representation of an image sensing pixel.
Primary difference is that with Fig. 4 A, in active matrix image sensing panel 1c, portion first end point electrode E1
System extended on thin-film transistor element T by photo-sensitive cell P, and with conductive layer C1 directly contacts and be electrically connected with.Can also
Saying is, one of is arranged on conductive layer C1 through hole O3 through the first end point electrode E1 of photo-sensitive cell P and makes first end point
Electrode E1 and conductive layer C1（Second grid）It is electrically connected with.Thereby, when photo-sensitive cell P irradiations, can equally provide dynamic negative
Polar voltages give thin-film transistor element T, improve the critical voltage of thin-film transistor element T, make the thin-film transistor element T will not
It is switched on and produces leakage phenomenon.
Additionally, refer to shown in Fig. 5, it is a kind of active matrix Image sensor apparatus 2 of present pre-ferred embodiments
Function block schematic diagram.
Active matrix Image sensor apparatus 2 include an active matrix image sensing panel 21 and a processing module 22.
Wherein, active matrix image sensing panel 21 is electrically connected with processing module 22, and can be the active-matrix of above-described embodiment
One of formula image sensing 1～1c of panel, in this its content is repeated no more.
Processing module 22 is electrically connected with the data wire DL of active matrix image sensing panel 21, and receives active-matrix
The photoreceptor signal of the photo-sensitive cell of formula image sensing panel 21 is forming an image data.Image data can be through follow-up image
Process and image shows and presents.In addition, processing module 22 also with the scanning of active matrix image sensing panel 21
Line SL is electrically connected with, and with enable scan line SL in proper order the grade photoreceptor signal is sequentially read.
In sum, because in the active matrix image sensing panel and device of the present invention, the of thin-film transistor element
One electrode and electrode data line is electrically connected with, the first end point electrode of second electrode and photo-sensitive cell is electrically connected with, first grid with sweep
Line electric connection is retouched, and second grid is electrically connected with the first end point electrode or the second end points electrode of photo-sensitive cell.Thereby, may be used
The critical voltage of thin-film transistor element is improved, and is irradiated by light in photo-sensitive cell and is made between first grid and second electrode
Potential difference raise when, thin-film transistor element is not switched on and leakage phenomenon is occurred.Therefore, the present invention can avoid master
The problem of the image sensing distortion caused by leakage phenomenon that dynamic matrix type image sensing panel and device are produced.
The foregoing is only illustrative, rather than for restricted person.Any spirit and scope without departing from the present invention, and to it
The equivalent modifications for carrying out or change, in being intended to be limited solely by scope of the invention as claimed.
Claims (16)
1. a kind of active matrix image sensing panel, it is characterised in that described active matrix image sensing panel includes：
One substrate；And
One image sensing pixel, is arranged on described substrate, and has：
Scan line；
One data wire, is crisscross arranged with described scan line；
One photo-sensitive cell, with a first end point electrode and one second end points electrode, described first end point electrode voltage is more than
The second described end points electrode voltage, the second described end points electrode is electrically connected to a reference voltage, described reference voltage
Polarity be negative；And
One thin-film transistor element, it is described with a first electrode, a second electrode, a first grid and a second grid
The described first end point of first electrode and described electrode data line is electrically connected with, described second electrode and described photo-sensitive cell
Electrode is electrically connected with, and described first grid and described scan line are electrically connected with, and described second grid is photosensitive with described
The described first end point electrode of element or the second described end points electrode are electrically connected with.
2. active matrix image sensing panel as claimed in claim 1, it is characterised in that described photo-sensitive cell has more
One first semiconductor layer, extrinsic semiconductor's layer and one second semiconductor layer, described extrinsic semiconductor's layer is folded in described
Between first semiconductor layer and the second described semiconductor layer.
3. active matrix image sensing panel as claimed in claim 2, it is characterised in that the first described semiconductor layer with
Described the second end points electrode directly contact and be electrically connected with, the second described semiconductor layer is straight with described first end point electrode
Contact and be electrically connected with.
4. active matrix image sensing panel as claimed in claim 1, it is characterised in that described thin-film transistor element
With more a channel layer, described channel layer includes monoxide quasiconductor, and described oxide semiconductor includes oxide, institute
The oxide stated includes at least one of indium, zinc and stannum.
5. active matrix image sensing panel as claimed in claim 1, it is characterised in that described second gate polar system is passed through
One conductive layer is electrically connected with the second described end points electrode.
6. active matrix image sensing panel as claimed in claim 1, it is characterised in that described second grid is by described
Thin-film transistor element on extend on described photo-sensitive cell, and with the second described end points electrode directly contact.
7. active matrix image sensing panel as claimed in claim 1, it is characterised in that described second grid with it is described
First end point electrode system be same layer, and at least partly described first end point electrode extends to institute by described photo-sensitive cell
On the thin-film transistor element stated.
8. active matrix image sensing panel as claimed in claim 1, the first end point electrode described in wherein at least part
Extended on described thin-film transistor element by described photo-sensitive cell, and with described second grid directly contact.
9. a kind of active matrix Image sensor apparatus, including：
One active matrix image sensing panel, comprising：
One substrate；
One image sensing pixel, is arranged on described substrate, and has：
Scan line；
One data wire, is crisscross arranged with described scan line；
One photo-sensitive cell, with a first end point electrode and one second end points electrode, described first end point electrode voltage is more than
The second described end points electrode voltage, the second described end points electrode is electrically connected to a reference voltage, described reference voltage
Polarity be negative；
One thin-film transistor element, it is described with a first electrode, a second electrode, a first grid and a second grid
The described first end point of first electrode and described electrode data line is electrically connected with, described second electrode and described photo-sensitive cell
Electrode is electrically connected with, and described first grid and described scan line are electrically connected with, and described second grid is photosensitive with described
The described first end point electrode of element or the second described end points electrode are electrically connected with；And
One processing module, electrically connects respectively with the scan line and described data wire described in active matrix image sensing panel
Connect.
10. active matrix Image sensor apparatus as claimed in claim 9, it is characterised in that described photo-sensitive cell has more
There are one first semiconductor layer, extrinsic semiconductor's layer and one second semiconductor layer, described extrinsic semiconductor's layer is folded in described
The first semiconductor layer and the second described semiconductor layer between.
11. active matrix Image sensor apparatus as claimed in claim 10, it is characterised in that the first described semiconductor layer
It is electrically connected with the second described end points electrode directly contact, described the second semiconductor layer and described first end point electrode
Directly contact and be electrically connected with.
12. active matrix Image sensor apparatus as claimed in claim 9, it is characterised in that described thin film transistor (TFT) unit
Part has more a channel layer, and described channel layer includes monoxide quasiconductor, and described oxide semiconductor includes oxide,
Described oxide includes at least one of indium, zinc and stannum.
13. active matrix Image sensor apparatus as claimed in claim 9, it is characterised in that described second gate polar system is saturating
Cross a conductive layer to be electrically connected with the second described end points electrode.
14. active matrix Image sensor apparatus as claimed in claim 9, it is characterised in that described second grid is by institute
Extend on the thin-film transistor element stated on described photo-sensitive cell, and directly connect with the second described end points electrode
Touch.
15. active matrix Image sensor apparatus as claimed in claim 9, it is characterised in that described second grid and institute
The first end point electrode system stated is same layer, and at least partly described first end point electrode is extended to by described photo-sensitive cell
On described thin-film transistor element.
16. active matrix Image sensor apparatus as claimed in claim 9, the first end point electrode described in wherein at least part
Extended on described thin-film transistor element by described photo-sensitive cell, and with described second grid directly contact.
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| CN107658361A (en) * | 2016-07-25 | 2018-02-02 | 群创光电股份有限公司 | Active matrix Image sensor apparatus |
| CN111987112A (en) * | 2019-05-22 | 2020-11-24 | 群创光电股份有限公司 | Radiation sensing device |
| CN113362721B (en) * | 2021-06-24 | 2022-11-04 | 武汉华星光电技术有限公司 | Array substrate, array substrate manufacturing method and display panel |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1751393A (en) * | 2003-02-14 | 2006-03-22 | 佳能株式会社 | Solid state image pickup apparatus and radiation image pickup apparatus |
| CN1925162A (en) * | 2005-08-31 | 2007-03-07 | 佳能株式会社 | Radiation detecting apparatus, radiation imaging apparatus and radiation imaging system |
| CN101013711A (en) * | 2006-01-30 | 2007-08-08 | 佳能株式会社 | Imaging apparatus, radiation imaging apparatus, and manufacturing methods therefor |
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| US7307301B2 (en) * | 2002-12-17 | 2007-12-11 | General Electric Company | Imaging array |
| US8736587B2 (en) * | 2008-07-10 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9166055B2 (en) * | 2011-06-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1751393A (en) * | 2003-02-14 | 2006-03-22 | 佳能株式会社 | Solid state image pickup apparatus and radiation image pickup apparatus |
| CN1925162A (en) * | 2005-08-31 | 2007-03-07 | 佳能株式会社 | Radiation detecting apparatus, radiation imaging apparatus and radiation imaging system |
| CN101013711A (en) * | 2006-01-30 | 2007-08-08 | 佳能株式会社 | Imaging apparatus, radiation imaging apparatus, and manufacturing methods therefor |
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