CN103972249B - Active matrix panels and image sensing means - Google Patents

Active matrix panels and image sensing means Download PDF

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CN103972249B
CN103972249B CN 201310046161 CN201310046161A CN103972249B CN 103972249 B CN103972249 B CN 103972249B CN 201310046161 CN201310046161 CN 201310046161 CN 201310046161 A CN201310046161 A CN 201310046161A CN 103972249 B CN103972249 B CN 103972249B
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electrode
image sensing
active matrix
gate
matrix type
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CN 201310046161
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CN103972249A (en )
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吴智濠
周政旭
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群创光电股份有限公司
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Abstract

本发明公开了一种主动矩阵式影像感测面板包括一基板以及一影像感测像素。 The present invention discloses an active matrix type image sensing panel includes a substrate and an image sensing pixels. 影像感测像素设置于基板上,并具有一扫描线、一数据线、一感光元件以及一薄膜晶体管元件。 The image sensing pixels disposed on the substrate and having a scan line, a data line, a thin film transistor element and a photosensitive element. 数据线与扫描线交错设置。 Data lines and the scan lines are interlaced. 感光元件具有一第一端点电极及一第二端点电极,第一端点电极电压大于第二端点电极电压。 A photosensitive member having a first end electrode and a second electrode terminal, a first terminal electrode voltage is greater than the second electrode terminal voltage. 薄膜晶体管元件具有一第一电极、一第二电极、一第一栅极及一第二栅极,第一电极与数据线电性连接,第二电极与感光元件之第一端点电极电性连接,第一栅极与扫描线电性连接,第二栅极与感光元件之第一端点电极或第二端点电极电性连接。 The thin film transistor element having a first electrode, a second electrode, a first gate and a second gate, a first electrode is electrically connected to the data line, a first terminal electrode and a second electrode of the photosensitive element connecting the first gate is electrically connected to the scanning line, a second gate electrode and the first end of the photosensitive member or the second electrode terminal electrically connected. 本发明亦揭露一种主动矩阵式影像感测装置。 The present invention also discloses an active matrix type image sensing device. 本发明可避免主动矩阵式影像感测面板及装置产生的漏电流现象所造成的影像感测失真的问题。 The present invention can avoid the problem of active matrix image sensing leakage current distortion phenomenon of the image sensing panel and a generating device caused.

Description

主动矩阵式影像感测面板及装置 Active matrix panels and image sensing means

技术领域 FIELD

[0001] 本发明系关于一种影像感测面板及装置,特别关于一种主动矩阵式影像感测面板及装置。 Department [0001] The present invention relates to a panel and an image sensing apparatus, image sensing panel, and particularly relates to an active matrix device.

背景技术 Background technique

[0002] 传统X光成像技术系利用成像胶片接收X光之曝光而成像,但近年来,由于半导体技术的发展,X光成像技术也进化到利用平板式的数位化影像感测面板来成像,即所谓的数位放射造影(digital radiography,DR)技术。 [0002] The conventional X-ray imaging system using the imaging film receiving exposing X-ray of the image, but in recent years, with the development of semiconductor technology, X-ray imaging technology has evolved to the use of plate type digitized image sensing panel image, i.e., a so-called digital radiographic (digital radiography, DR) technology.

[0003] 兹将数位放射造影技术之原理简述如下。 [0003] The digital hereby principle of radiographic techniques are summarized below. 当X光进入影像感测装置内时,会先经过一闪烁晶体层(scintillator),并藉其将X光转变为可见光,再藉由感光元件将所感测到的可见光转成电信号,之后连接至薄膜晶体管元件,再从数据线被读出,再经过影像处理后则变成影像。 When X-rays enter the image sensing device, will go through a scintillation crystal layer (scintillator), and by means of which the X-rays into visible light, and then the photosensitive member by the sensed electrical signal to turn into a visible light, after the connection to the thin film transistor element, and then the data is read out from the line, and then after the image processing into the image. 其中,感光元件从原本的电荷耦合元件(charge coupled device,CCD)也进展到硅基的光电二极管。 Wherein the photosensitive member is proceeding from the original charge coupled device (charge coupled device, CCD) to silicon-based photodiode. 在目前技术中,也有不需闪烁晶体层,而是直接将X光转成电信号。 In the current art, there need scintillation counter crystal layer, but transfer directly to X-rays into an electrical signal. [0004]然而,习知常用之薄膜晶体管元件例如为金属氧化物薄膜晶体管,而感光元件例如为NIP型非晶硅光二极管。 [0004] However, conventional thin film transistor element is commonly used, for example, a metal oxide thin film transistor and the photosensitive element, for example, NIP-type amorphous silicon photodiode. 其中,金属氧化物薄膜晶体管之栅极一般系操作于负极性的电压(例如-5V),而NIP型非晶硅光二极管的偏压的极性亦为负极性。 Wherein the gate electrode of the thin film transistor-based metal oxides are generally operated in a negative polarity voltage (e.g. -5 V), while the polarity type amorphous NIP photodiode bias voltage is also negative. 因此,当感光元件照光之后所产生的电子会往感光元件的下电极移动,进而使下电极及薄膜晶体管之源极的电位下降。 Accordingly, when the photosensitive member after the electron illumination generated by the electrode will move towards the photosensitive member, and thus the source electrode and the thin film transistor of the electrode potential drop. 但是,若下电极与薄膜晶体管之源极的电位因高强度的光线照射而持续下降,使得栅极与源极之间的电位差持续上升,进而大于薄膜晶体管的临界电压(Threshold voltage)时, 则薄膜晶体管将被导通而使得源极开始漏电到数据线,如此,影像处理模块处理而取得影像时,将造成感测失真的问题。 However, if the source electrode of the thin film transistor and the potential of extremely high due to the light irradiation intensity continued to drop, so that the potential difference between the gate and the source continues to rise, in turn greater than the threshold voltage of the thin film transistor (Threshold voltage), the when the thin film transistor will be turned on so that the source and the drain to the data line begins, thus, the image processing module acquires the image, the distortion sensing cause problems.

[0005]因此,如何提供一种主动矩阵式影像感测面板及装置,可避免主动矩阵式影像感测面板及装置产生的漏电流现象,造成影像感测失真的问题,已成为重要课题之一。 [0005] Therefore, how to provide an active matrix type image sensing device panel and can prevent leakage current phenomenon of active matrix type image sensing device and the panel produced, resulting in distortion of the image sensing problems, it has become an important issue .

发明内容 SUMMARY

[0006]有鉴于上述课题,本发明之目的为提供一种可避免产生的漏电流现象,造成影像感测失真的问题之主动矩阵式影像感测面板及主动矩阵式影像感测装置。 [0006] In view of the above problems, an object of the present invention to provide a leakage current phenomenon can be avoided, resulting in an active matrix type image sensing panel image sensing and the problem of distortion of the active matrix type image sensing device.

[0007] 为达上述目的,依据本发明之一种主动矩阵式影像感测面板包括一基板以及一影像感测像素。 [0007] To achieve the above object, the present invention in accordance with one of the active matrix type image sensing panel includes a substrate and an image sensing pixels. 影像感测像素设置于基板上,并具有一扫描线、一数据线、一感光元件以及一薄膜晶体管元件。 The image sensing pixels disposed on the substrate and having a scan line, a data line, a thin film transistor element and a photosensitive element. 数据线与扫描线交错设置。 Data lines and the scan lines are interlaced. 感光兀件具有一第一端点电极及一第二端点电极,第一端点电极电压大于第二端点电极电压。 Wu photosensitive member having a first end electrode and a second electrode terminal, a first terminal electrode voltage is greater than the second electrode terminal voltage. 薄膜晶体管元件具有一第一电极、一第二电极、一第一栅极及一第二栅极,第一电极与数据线电性连接,第二电极与感光元件之第一端点电极电性连接,第一栅极与扫描线电性连接,第二栅极与感光元件之第一端点电极或第二端点电极电性连接。 The thin film transistor element having a first electrode, a second electrode, a first gate and a second gate, a first electrode is electrically connected to the data line, a first terminal electrode and a second electrode of the photosensitive element connecting the first gate is electrically connected to the scanning line, a second gate electrode and the first end of the photosensitive member or the second electrode terminal electrically connected.

[0008] 为达上述目的,依据本发明之一种主动矩阵式影像感测装置包括一主动矩阵式影像感测面板以及一处理模块。 [0008] To achieve the above object, the present invention in accordance with one of the active matrix type image sensing device comprising an active matrix type image sensing panel, and a processing module. 影像感测像素设置于基板上,并具有一扫描线、一数据线、一感光元件以及一薄膜晶体管元件。 The image sensing pixels disposed on the substrate and having a scan line, a data line, a thin film transistor element and a photosensitive element. 数据线与扫描线交错设置。 Data lines and the scan lines are interlaced. 感光元件具有一第一端点电极及一第二端点电极,第一端点电极电压大于第二端点电极电压。 A photosensitive member having a first end electrode and a second electrode terminal, a first terminal electrode voltage is greater than the second electrode terminal voltage. 薄膜晶体管元件具有一第一电极、一第二电极、一第一栅极及一第二栅极,第一电极与数据线电性连接,第二电极与感光元件之第一端点电极电性连接,第一栅极与扫描线电性连接,第二栅极与感光元件之第一端点电极或第二端点电极电性连接。 The thin film transistor element having a first electrode, a second electrode, a first gate and a second gate, a first electrode is electrically connected to the data line, a first terminal electrode and a second electrode of the photosensitive element connecting the first gate is electrically connected to the scanning line, a second gate electrode and the first end of the photosensitive member or the second electrode terminal electrically connected. 处理模块分别与主动矩阵式影像感测面板之扫描线及数据线电性连接。 The processing module is connected to the active matrix panel, scan lines of image sensing data lines and electrically.

[0009] 在一实施例中,第二端点电极电性连接至一参考电压,参考电压的极性系为负。 [0009] In one embodiment, the second electrode terminal is electrically connected to a reference voltage, the reference voltage of negative polarity is based.

[0010] 在一实施例中,感光元件更具有一第一半导体层、一本质半导体层及一第二半导体层,本质半导体层夹置于第一半导体层与第二半导体层之间。 [0010] In one embodiment, the photosensitive element further having a first semiconductor layer, the nature of a semiconductor layer and a second semiconductor layer, the nature of the semiconductor layer is sandwiched between the first semiconductor layer and the second semiconductor layer.

[0011] 在一实施例中,第一半导体层与第二端点电极直接接触而电性连接,第二半导体层与第一端点电极直接接触而电性连接。 [0011] In one embodiment, the first semiconductor layer and a second electrode terminal electrically connected directly contacts the second semiconductor layer in direct contact with the first electrode terminal electrically connected.

[0012] 在一实施例中,薄膜晶体管元件更具有一通道层,通道层包括一氧化物半导体,氧化物半导体包括氧化物,氧化物包括铟、锌及锡的至少其中之一。 [0012] In one embodiment, the thin film transistor element further has a channel layer, a channel layer comprising an oxide semiconductor, an oxide semiconductor including oxides, including indium oxide, zinc and tin at least one of them.

[0013] 在一实施例中,第二栅极系透过一导电层与第二端点电极电性连接。 [0013] In one embodiment, the second gate lines connected to the second terminal electrode electrically through a conductive layer.

[0014] 在一实施例中,第二栅极由薄膜晶体管元件之上延伸至感光元件之上,并与第二端点电极直接接触。 [0014] In one embodiment, the second gate extending over the top of the thin film transistor element to the photosensitive element, and in direct contact with the second terminal electrode.

[0015] 在一实施例中,第二栅极与第一端点电极系为同一层,且至少部分第一端点电极由感光元件延伸至薄膜晶体管元件之上。 [0015] In one embodiment, the second gate terminal of the first electrode system and the same layer, and at least partially extending from the first end electrode to the photosensitive member over the thin film transistor element.

[0016] 在一实施例中,至少部分第一端点电极由感光元件延伸至薄膜晶体管元件之上, 并与第二栅极直接接触。 [0016] In one embodiment, at least a portion of the first electrode extending from the end on the photosensitive member to the thin film transistor element, and in direct contact with the second gate.

[0017] 承上所述,因本发明之主动矩阵式影像感测面板及装置中,薄膜晶体管元件之第一电极与数据线电性连接,第二电极与感光元件之第一端点电极电性连接,第一栅极与扫描线电性连接,而第二栅极与感光元件之第一端点电极或第二端点电极电性连接。 [0017] The upper bearing, because the present invention the active matrix panel and an image sensing device, the first electrode and the data line is electrically connected to the thin film transistor element, a first terminal electrode and the second electrode of the photosensitive element connected to the first gate is electrically connected to the scanning line and the first endpoint and the second gate electrode of the photosensitive member or the second electrode terminal electrically connected. 藉此,可提高薄膜晶体管元件的临界电压,并于感光元件被光线照射而使第一栅极与第二电极之间的电位差升高时,使薄膜晶体管元件不会被导通而发生漏电流现象。 Accordingly, the threshold voltage of the thin film transistor can be improved device, and when the photosensitive member is raised to a potential difference between the first light irradiation and the second gate electrode, the thin film transistor element is turned on to drain not occur current phenomenon. 因此,本发明可避免主动矩阵式影像感测面板及装置产生的漏电流现象所造成的影像感测失真的问题。 Accordingly, the present invention can avoid the problem of active matrix image sensing leakage current distortion phenomenon of the image sensing panel and a generating device caused.

附图说明 BRIEF DESCRIPTION

[0018]图1A为本发明较佳实施例之一种主动矩阵式影像感测面板中,一个影像感测像素的结构示意图。 [0018] Figure 1A of one embodiment of the present active matrix type image sensing panel, a schematic structure of image sensing pixels of the preferred embodiment of the invention.

[0019]图1B为图1A之影像感测像素的等效电路示意图。 [0019] FIG. 1B is a circuit diagram of an image sensor pixel of FIG. 1A equivalent.

[0020]图2为本发明之主动矩阵式影像感测面板中,薄膜晶体管元件的电压与电流的曲线示意图。 In the active matrix type image sensing panel [0020] FIG. 2 of the present invention, a schematic diagram of voltage and current curves of the thin film transistor element.

[0021]图3及图4A分别为本发明较佳实施例另一态样之主动矩阵式影像感测面板中,一个影像感测像素的结构示意图;图4B为图4A之影像感测像素的等效电路示意图。 [0021] FIGS. 3 and 4A, respectively, in the present embodiment of another aspect of an active matrix type image sensing panel of the preferred embodiment of the invention, a structure of the image sensing pixel schematic; FIG. 4B is a diagram of the image sensing pixel of 4A The equivalent circuit schematic.

[0022]图4C所示为本发明较佳实施例又一态样之主动矩阵式影像感测面板中,一个影像感测像素的结构示意图。 [0022] FIG 4C further aspect of the present embodiment in the active matrix type image sensing panel, a schematic structure of image sensing pixels preferred embodiment of the present invention shown in FIG.

[0023]图5为本发明较佳实施例之一种主动矩阵式影像感测装置的功能方块示意图。 [0023] FIG. 5 of the present invention, the preferred embodiment of a functional block diagram of one kind of active matrix type image sensing apparatus embodiment. [0024] 1、1&~1〇、21:主动矩阵式影像感测面板 [0024] ~ & 1〇 1,1, 21: active matrix type image sensing panel

[0025] 11:基板 [0025] 11: substrate

[0026] 2:主动矩阵式影像感测装置 [0026] 2: an active matrix type image sensing device

[0027] 22:处理模块 [0027] 22: a processing module

[0028] C1:导电层(第二栅极) [0028] C1: conductive layer (a second gate)

[0029] C2~C3:导电层[0030] DL:数据线 [0029] C2 ~ C3: conductive layer [0030] DL: data line

[0031] E1:第一端点电极 [0031] E1: a first electrode terminal

[0032] E2:第二端点电极 [0032] E2: second electrode terminal

[0033] E3:第一电极 [0033] E3: a first electrode

[0034] E4:第二电极[0035] ES:蚀刻终止层 [0034] E4: the second electrode [0035] ES: etch stop layer

[0036] G:(第一)栅极 [0036] G :( first) gate

[0037] II~13:绝缘层 [0037] II ~ 13: insulating layer

[0038] 14:保护层 [0038] 14: protective layer

[0039] 01 ~03:通孔 [0039] 01 ~ 03: through-hole

[0040] P:感光元件[0041] P1:第一半导体层 [0040] P: the photosensitive member [0041] P1: a first semiconductor layer

[0042] P2:本质半导体层 [0042] P2: Essence semiconductor layer

[0043] P3:第二半导体层 [0043] P3: a second semiconductor layer,

[0044] SL:扫描线 [0044] SL: scan line

[0045] T:薄膜晶体管元件[0046] T11:栅极介电层 [0045] T: a thin film transistor element [0046] T11: a gate dielectric layer

[0047] T12:通道层 [0047] T12: channel layer

[0048] V:参考电压 [0048] V: voltage reference

具体实施方式 detailed description

[0049]以下将参照相关图式,说明依本发明较佳实施例之主动矩阵式影像感测面板及装置,其中相同的元件将以相同的参照符号加以说明。 [0049] with reference to related drawings will be described active matrix panel and the image sensing apparatus according to the invention under this preferred embodiment, wherein like elements will be described with the same reference numerals.

[0050] 请同时参照图1A及图1B所示,其中,图1A为本发明较佳实施例之一种主动矩阵式影像感测面板1中,一个影像感测像素的结构示意图,而图1B为图1A之影像感测像素的等效电路意图。 [0050] Referring to FIGS. 1A and 1B, wherein FIG. 1A schematic diagram of a configuration of the image sensing pixel of the invention, a preferred embodiment of the active matrix type image sensing panel 1, and FIG. 1B is an equivalent circuit of the image sensing pixel are intended 1A of FIG.

[0051]主动矩阵式影像感测面板1系包括复数影像感测像素设置于一基板11上。 [0051] The active matrix type image sensing panel comprising a plurality of image-based sensing pixels disposed on a substrate 11. 在实施上,基板11可为一可透光之材质,例如是玻璃、石英或类似物、塑胶、橡胶、玻璃纤维或其他尚分子材料,较佳的可为一硼酸盐无喊玻璃基板(alumino silicate glass substrate)。 In the embodiment, the substrate 11 may be of a light-transmissive material, such as glass, quartz or the like, plastic, rubber, fiberglass, or other material molecules still, preferably a borate may not call the glass substrate ( alumino silicate glass substrate). 基板11亦可为一不透光之材质,例如是金属-玻璃纤维复合板、或金属-陶瓷复合板。 The substrate 11 may also be of an opaque material such as a metal - plate glass fiber composite, or a metal - ceramic composite plate.

[0052]如图1A及图1B所示,于该等影像感测像素中,至少其中之一的影像感测像素具有一扫描线SL、一数据线DL、一感光元件P、一薄膜晶体管元件T以及一导电层C1。 [0052] FIG 1A and FIG, to such image sensing pixels, the image sensing pixels having at least one of a scan line SL 1B, a data line DL, a photosensitive member P, a thin film transistor device T and a conductive layer C1. 另外,本实施例之影像感测像素更可具有一导电层C 2、一绝缘层II、一绝缘层I2、一绝缘层13及一保护层14。 Further, the image sensing pixels embodiment of the present embodiment may further have a conductive layer C 2, an insulating layer II, an insulating layer I2, an insulating layer 13 and a protective layer 14. 其中,扫描线SL、数据线DL、感光元件P、薄膜晶体管元件T、导电层C1、C2、绝缘层n~= 及保护层14系设置于基板11上。 Wherein the scan lines SL, data line DL, photosensitive member P, the thin film transistor elements T, the conductive layers C1, C2, the insulating layer n ~ = 14 and a protective layer 11 are disposed on the substrate. 需注意者,图1A仅描绘出丨个影像感测像素,就主动矩阵式影像感测面板1而言,其可具有多个影像感测像素呈阵列设置,且多条数据线此、多条扫描线SL系交错设置。 It is noted by FIG. 1A only depicts Shu th image sensing pixels, the image on the active matrix panel 1 in terms of sense, which may have a plurality of image sensing pixels arranged in an array, and this plurality of data lines, a plurality of are interlaced scan line SL.

[0053] ^据线DL与扫描线SL交错设置。 [0053] ^ data line DL and the scan line SL staggered. 感光元件P具有一第一端点电极E1及一第二端点电极E 2。 P photosensitive member having a first end and a second end electrode E1 electrode E 2. 第一端点电极E1或第二端点电极E 2可为一透明电极,其材质例如可为氧化铟锡(ITO)。 The first electrode E1 or second end terminal electrode E 2 may be a transparent electrode, for example, the material may be indium tin oxide (ITO). 另外,感光兀件p更具有一弟一半导体层P1、一本质(Intrinsic)半导体层P2及一第二半导体层P 3,本质半导体层P2系位于第一半导体层Pi与第二半导体层p3之间。 Further, Wu photosensitive member further has a brother a p semiconductor layer P1, a nature (Intrinsic) semiconductor layer P2 and a second semiconductor layer P 3, essentially based semiconductor layer P2 Pi located between the first semiconductor layer and the second semiconductor layer of p3 between. 其中,第一半导体层P1与第二端点电极E2直接接触而电性连接,而第二半导体层P3与第一端点电极£1 直接接触而电性连接。 Wherein the first semiconductor layer P1 in direct contact with the second terminal electrically connected to electrode E2, and the second semiconductor layer and the first terminal P3. 1 £ electrode electrically connected in direct contact. 于此,感光元件P系为一NIP型之光二极管,并以非晶硅(a-Si)薄膜沉积制成。 Thereto, the photosensitive element is a photodiode P-based type of a NIP, and is made of amorphous silicon (a-Si) thin film deposition. 在本实施例中,第一半导体层例如为P型半导体,而第二半导体层为~型半导体,当然并不以此为限。 In the present embodiment, the first semiconductor layer, for example, a P-type semiconductor, the second semiconductor layer is a semiconductor ~, of course, not limited thereto. 此外,如图1B所不,桌一端点电极E2电性连接至一参考电压V,参考电压V 可提供感光元件P-偏压,且为负极性电压,使得第一端点电极E1电压大于第二端点电极电压E2〇 Further, not shown in FIG. 1B, Table endpoint electrode E2 electrically connected to a reference voltage V, the reference voltage V bias can be provided P- photosensitive member, and is a negative voltage, such that the first terminal voltage is greater than the first electrode E1 two electrode voltage terminal E2〇

[0054]薄膜晶体管元件T例如为N型非晶硅薄膜晶体管,并具有一栅极G、一栅极介电层T11、一通道层T12、一第一电极E3及一第二电极E4。 [0054] The thin film transistor elements T, for example, N-type amorphous silicon thin film transistor, and having a gate G, a T11 gate dielectric layer, a channel layer T12, a first electrode and a second electrode E3 E4. 栅极G设置于基板11上,并与扫描线SL电性连接。 The gate G is provided on the substrate 11, and electrically connected to the scan line SL. 栅极G之材质系为金属(例如为铝、铜、银、钼、或钛)或其合金所构成的单层或多层结构。 Based material of the gate G of a metal (e.g., aluminum, copper, silver, molybdenum, or titanium) or a monolayer or multilayer structure composed of an alloy. 部分用以传输驱动信号之导线,可以使用与栅极G同层且同一制程之结构,且彼此电性相连,例如扫描线。 Conductor portion for transmitting the driving signals can be used with the same layer as the gate G and the same structure of the process, and are electrically connected to each other, such as a scan line. 栅极介电层T11设置于栅极G上,且栅极介电层I'll系可为有机材质例如为有机硅氧化合物,或无机材质例如为氮化硅、氧化硅、氮氧化硅、碳化硅、氧化铝、氧化铪、或上述材质之多层结构。 T11 gate dielectric layer disposed on the gate G, and I'll gate dielectric layer may be an organic-based material such as an organic silicone compound, or an inorganic material, for example silicon nitride, silicon oxide, silicon oxynitride, silicon carbide, aluminum oxide, hafnium oxide, or a material of the multilayer structure. 栅极介电层T11需完整覆盖栅极G,并可选择部分或全部覆盖基板11。 T11 gate dielectric layer needs to completely cover the gate G, and may cover part or all of the substrate 11.

[0055]通道层112相对栅极G的位置设置于栅极介电层T11上。 [0055] 112 position relative to the gate G channel layer disposed on the gate dielectric layer is T11. 在实施上,通道层T12例如可包含一氧化物半导体。 In the embodiment, the channel layer may comprise, for example, a T12 oxide semiconductor. 其中,前述之氧化物半导体包括氧化物,且氧化物包括铟、镓、锌及锡其中之一,例如但不限于为氧化铟镓辞(Indium Gallium Zinc Oxide, IGZO),以使薄膜晶体管元件T为一金属氧化物薄膜晶体管。 Wherein the oxide comprises the oxide semiconductor, and an oxide including indium, gallium, zinc, tin and one of which, for example, but not limited to speech indium gallium oxide (Indium Gallium Zinc Oxide, IGZO), so that the thin film transistor elements T It is a metal oxide thin film transistor. 其中,金属氧化物薄膜晶体管具有低漏电流(漏电流介于10-14安培至10-18安培)、高电子能隙(约3.1电子伏特)及对光照射不敏感等特性,为一增益型(Enhancement mode)晶体管。 Wherein the metal oxide thin film transistor having a low leakage current (leakage current between 10-14 amps 10-18 amperes), high electron energy gap (about 3.1 eV), and the irradiation light insensitivity characteristic, a gain for the type (Enhancement mode) transistor.

[0056]第一电极E3与第二电极E4分别设置于通道层T12上,且第一电极E3与第二电极E4 分别与通道层T12接触,于薄膜晶体管元件T之通道层T12未导通时,两者系电性分离。 When [0056] the first electrode and the second electrode E3 E4 are respectively disposed on the channel layer T12, and the first electrode and the second electrode E3 E4 are in contact with the channel layer T12, the channel layer of the thin film transistor element T12 is not turned on T , based electrically separate them. 其中, 第一电极E3例如为薄膜晶体管元件T之漏极,并与数据线DL电性连接,而第二电极E4为薄膜晶体管元件T之源极,并与感光元件P之第一端点电极E1电性连接。 Wherein, for example, a first drain electrode E3 T of the thin film transistor element, and is electrically connected to the data line DL and the second electrode E4 as a source electrode of the thin film transistor elements T, and the photosensitive member and the first end of the electrode P E1 electrical connection. 于此,系透过设置于绝缘层II及绝缘层I 2上之一通孔01,并透过第一端点电极E1往薄膜晶体管元件T的方向延伸,使第一端点电极E1与第二电极E4电性连接。 Thereto, based on the disposed through the insulating layer and the insulating layer I II one of the through holes 01 2, and extends toward the thin film transistor T through a first end element electrode E1, the first electrode E1 and a second end electrically connecting the electrode E4. 第一电极E3与第二电极E4之材质可为金属(例如铝、铜、银、钼、或钛)或其合金所构成的单层或多层结构。 The first electrode E3 and E4 of the second electrode may be made of a metal (e.g., aluminum, copper, silver, molybdenum, or titanium) or a monolayer or multilayer structure composed of an alloy. 此外,部分用以传输驱动信号之导线,可以使用与第一电极E 3与第二电极E4同层且同一制程之结构,例如数据线。 Further, part of the wire for transmitting the driving signals can be used with the 3 and the second electrode layer E4 and the same structure as the first electrode E of the manufacturing process, such as data lines.

[0057]值得一提的是,本实施例之薄膜晶体管元件T之第一电极E3(以下亦称为漏极)与第二电极(以下亦称为源极)亦可设置于一蚀刻终止(etch stop)层ES上,且源极与漏极之一端系分别自蚀刻终止层ES之开口与通道层T12接触。 [0057] It is worth mentioning that the first electrode E3 of the thin film transistor elements T of the embodiment according to the present embodiment (hereinafter, also referred to as drain) and the second electrode (hereinafter, also referred to as source) may also be disposed in an etching stop ( etch stop) layer ES, and one end of the source and the drain, respectively, from the opening of the etch stop layer ES and the channel layer in contact with T12. 其中,蚀刻终止层ES系可为有机材质例如为有机娃氧化合物,或单层无机材质例如氮化娃、氧化桂、氮氧化娃、碳化娃、氧化招、 氧化铪、或上述材质组合之多层结构。 Wherein ES-based etch stop layer may be, for example, organic oxygen compounds baby, monolayer, or an inorganic material e.g. baby nitride, oxide Gui, oxynitride baby, baby carbide, oxide strokes, hafnium oxide, or said combination of materials is an organic material as much as layer structure. 不过,在其他的实施例中,也可将源极与漏极直接设置于通道层T12上,而不需蚀刻终止层ES。 However, in other embodiments, it may also be the source and drain is directly provided on the channel layer T12, an etch stop layer without ES.

[0058]导电层C1系与栅极G相对设置,且导电层C1与感光元件P之第一端点电极E1或第二端点电极E2电性连接。 [0058] C1-based conductive layer disposed opposite to the gate G, a first end and a second end electrode E1 or electrode E2 electrically conductive layer P of the photosensitive element C1 and the connector. 在本实施例中,导电层C1系位于栅极G之上。 In the present embodiment, the conductive layer C1 is located on the gate line G. 其中,栅极G称为薄膜晶体管元件T之第一栅极,导电层C1称为薄膜晶体管元件T之第二栅极,而第一栅极(栅极G)与第二栅极(导电层C1)系相对而设,且绝缘层II系设置于导电层C1(第二栅极)与第一电极E3 或第二电极E4之间。 Wherein the first gate G is called the T-gate thin film transistor element, a second conductive layer C1 is called the T-gate thin film transistor element, and a first gate electrode (gate G) and a second gate electrode (conductive layer C1) based oppositely disposed, and the insulating layer on the conductive layer disposed II line C1 between the first electrode and the second electrode E3 or E4 (second gate). 另外,绝缘层12完全覆盖导电层Cl,而绝缘层13设置于绝缘层12上。 Further, the insulating layer 12 overlying conductive layer Cl, the insulating layer 13 is disposed on the insulating layer 12. 此外,导电层C1系透过位于绝缘层12及绝缘层13上之一通孔02,并透过导电层C2由通孔02延伸至第二端点电极E2上,使导电层C1(第二栅极)与第二端点电极E2电性连接。 In addition, the conductive layer C1 through line 12 and the insulating layer 13 on one of the insulating layer through hole 02, and a through hole 02 extending to the upper end of the second electrode E2 through the conductive layer C2, the conductive layer C1 (second gate ) connected to the second terminal electrode E2 electrically. 其中,导电层C2亦可连接至参考电压V,以提供感光元件P-偏压(图1A未显示)。 Wherein the conductive layer C2 may also be connected to a reference voltage V, the photosensitive member to provide a biasing P- (not shown in FIG. 1A). 导电层C1、C2可为透光(例如IT0)或不透光(例如金属或合金)的材质所构成。 Conductive layers C1, C2 may be translucent (e.g. IT0) or opaque (e.g. metal or alloy) composed of a material. 于此,导电层ci例如为一金属层,而导电层C2的材质系以透明导电层为例。 Thereto, the conductive layer is a metal layer, for example, ci, and the material of the conductive layer C2 based transparent conductive layer as an Example. 另外,绝缘层II的材质例如为氧化硅(si〇x),绝缘层12的材质例如为氮化硅(SiNx),且绝缘层13的材质例如包含氮化硅(SiNx)或四氟乙烯-全氟烷氧基乙條基醚共聚物(Polyfluoroalkoxy,PFA)。 Further, the material of the insulating layer II, for example, a silicon oxide (si〇x), material of the insulating layer 12 made of, for example, silicon nitride (SiNx), for example, and the insulating layer 13 of silicon nitride (SiNx) or tetrafluoroethylene - Article perfluoroalkoxy ether copolymer (Polyfluoroalkoxy, PFA). 此外,保护层14设置于薄膜晶体管元件T及感光元件P之上,并位于导电层C2及绝缘层13上。 Further, the protective layer 14 disposed on the thin film transistor elements T P and the photosensitive member, and the conductive layer and the insulating layer 13 C2. 于此,保护层14的材质可与绝缘层13 的材质相同,并例如可包含氮化硅或四氟乙烯-全氟烷氧基乙烯基醚共聚物。 Thereto, the material of the protective layer 14 may be the same material of the insulating layer 13, and may comprise, for example, silicon nitride or tetrafluoroethylene - perfluoroalkyl vinyl ether copolymer.

[00591另外,请参照图2所示,其为本发明之主动矩阵式影像感测面板1中,薄膜晶体管元件T的电压与电流的曲线示意图。 [00591 In addition, please refer to FIG. 2, the active matrix image sensor of the present invention in which the panel 1, a schematic diagram of voltage and current of the thin film transistor elements T curve. 于此,横座标为栅极G(第一栅极)的电压,而纵座标为正规化后之漏极电流。 Here, the abscissa is the voltage of the gate G (first gate electrode), and the ordinate the drain current of the normalization.

[0060]在本实施例中,因于栅极G(第一栅极)之上具有一导电层C1(第二栅极),且导电层C1与感光元件P之第二端点电极E2电性连接。 [0060] In the present embodiment, by having a conductive layer C1 (a second gate) to the gate G (first gate) above, and the second terminal electrode E2 electrically conductive layer C1 and the photosensitive element P connection. 另外,第二端点电极E2电性连接至参考电压V, 而参考电压V为感光兀件P之偏压,且参考电压V的电压极性为负,使得第一端点电极E1电压大于第二端点电极E1电压。 Further, the second terminal electrode E2 electrically connected to the reference voltage V, and the bias reference voltage V P of the photosensitive member Wu, polarity of the voltage V and the reference voltage is negative, so that the first voltage is greater than a second terminal electrode E1 terminal voltage electrode E1. 藉由具有负极性之导电层c 1 (第二栅极),可将薄膜晶体管元件丁之通道层T12之后通道(back channel,即通道层T12与蚀刻终止层ES之间)所累积的电子导引出,藉此可提闻薄I旲晶体管兀件T的临界电压(Threshold voltage)。 By having the electronic conductivity of negative conductive layer c 1 (second gate electrode), after the element may be a thin film transistor channel layer Ding T12 channel (back channel, i.e. the channel layer and the etching stop layer T12 between ES) accrued lead, whereby the threshold voltage can provide audible I Dae thin transistor element T, Wu (threshold voltage). 于此,藉由导电层C1 以提高薄膜晶体管元件T的临界电压,也可称此薄膜晶体管元件t具有双栅极(dual-g ate) 的设计(不过实际上,导电层Cl并不具有薄膜晶体管元件T之栅极G原来的功用)。 Thereto, the conductive layer by C1 to increase the threshold voltage of the thin film transistor elements T, and this can also be called a thin film transistor having a double gate design element t (dual-g ate) (though in fact, a thin film having a conductive layer is not Cl the gate of transistor elements T of the original function G).

[0061]如图2所示,当导电层C1与负极性之参考电压V连接,且其电压值越来越小时(例如由0、- IV、…、―10V),将使薄膜晶体管元件T的栅极电压与漏极电流的曲线往右侧移动,藉此,可提高薄膜晶体管元件T的临界电压(例如临界电压由接近0V往上增加到大约6¥ )。 [0061] As shown, the reference voltage V when the conductive layer of the connector C1 and the negative electrode 2, and a smaller and smaller voltage value (for example 0, - IV, ..., -10V), will cause a thin film transistor element T curve gate voltage and the drain current Wang Youce movement, whereby the threshold voltage of the thin film transistor can be improved device T (e.g., by a threshold voltage close to 0V up to approximately 6 ¥). 举例而言,当参考电压V为的电压值为一l〇V时,藉由导电层C1连接至参考电压V,使导电层C1的电压亦为一10V,可提高薄膜晶体管元件T的临界电压到+6V(以上)。 For example, when the reference voltage V is a voltage value of a l〇V, by a conductive layer connected to a reference voltage V C1, the voltage of the conductive layer C1 is also a 10V, the threshold voltage of the thin film transistor can be improved device T to + 6V (above). 因此,当感光元件P照光之后所产生的电子往第一端点电极E1及薄膜晶体管元件T的第二电极E4移动时,虽然会使薄膜晶体管元件T之第二电极E4的电位下降,进而使栅极G与第二电极E4(源极)之间的电位差VGS持续=1:升(即负值越来越小),但是由于薄膜晶体管元件了的临界电压己因导电层(^的设置而提高,故薄膜晶体管元件T不会被导通,因此,薄膜晶体管元件T不会有漏电流的现象。 Therefore, when the photosensitive member when the electronic light P generated as moving toward the second end of the first electrode E4 and the electrode E1 of the thin film transistor elements T, while the second electrode E4 causes the thin film transistor elements T of the potential drop, thereby enabling the potential difference VGS between the gate G and the second electrode E4 (source) Length = 1: l (i.e. smaller negative value), but since the threshold voltage of the thin film transistor has a conductive layer because of the element (provided ^ it is increased, so that the thin film transistor element T will not be turned on, therefore, the thin film transistor element T is not the leakage current phenomenon.

[0062]此外,主动矩阵式影像感测面板1可更包含一波长调变层(图未显示),其系设置于影像感测像素之上。 [0062] Further, the active matrix type image sensing panel 1 may further comprise a wavelength modulation layer (not shown), which is disposed on the image-based sensing pixels. 其中,波长调变层可为一闪烁晶体层(scintillat〇r),用以将收入之光线转换为特定波长之光线,例如将X光转换成可见光,以利感光元件P感光。 Wherein the wavelength modulation layer may be a scintillation crystal layer (scintillat〇r) for converting light income of a particular wavelength of light, for example, X-rays into visible light, in order to facilitate the photosensitive photosensitive member P. 当然,在感光元件P可直接将X光转成电信号的情况下,波长调变层可省略。 Of course, in the case of P X-rays directly into an electric signal transfer photosensitive element, the wavelength modulation layer may be omitted.

[0063]另外,请参照图3所示,其为本发明较佳实施例另一态样之主动矩阵式影像感测面板la中,一个影像感测像素的结构示意图。 [0063] Further, referring to FIG. 3, which is the preferred embodiment of the present invention, another aspect of the active matrix type image sensing panel la, the schematic structural diagram of an image sensing pixel.

[00M]图3与图1A主要的不同在于,图3之影像感测像素的结构中,导电层(^并不透过另一导电层与感光元件P之第二端点电极E2电性连接,而是导电层C1由薄膜晶体管元件T之上直接延伸至感光元件P之上,并与第二端点电极E2直接接触。换言之,通孔02系形成于绝缘层12、13上,且导电层C1系设置于通孔〇2内,以由薄膜晶体管元件T之上直接延伸至感光元件P上,以直接与第二端点电极E2直接接触而电性连接。其中,导电层C1系为可透光的材质, 并可例如为氧化铟锡(IT0)。 [00M] FIG. 3 in that the major difference 1A, the structure of image sensing pixels of FIG. 3, the conductive layer (^ are not connected to the second terminal through another electrode E2 electrically conductive layer of the photosensitive element P, instead conductive layer over the thin film transistor extends from C1 element T on the photosensitive member directly to P, and in direct contact with the second terminal electrode E2. in other words, the through-hole 02 is formed on the insulating layer lines 12 and 13, and the conductive layer C1 lines disposed in the through hole 〇2 as to extend over the thin-film transistor elements T P directly onto the photosensitive member, in direct contact with the second end directly electrically connected to electrode E2. wherein the conductive layer is made of a transparent line C1 the material may, for example indium tin oxide (IT0).

[0065]另外,请参照图4A及图4B所示,其中,图4A为本发明较佳实施例又一态样之主动矩阵式影像感测面板lb中,一个影像感测像素的结构示意图,而图4B为图4A之影像感测像素的等效电路示意图。 [0065] In addition, please refer to FIGS. 4A and 4B, wherein Fig 4A still another aspect of embodiments of active matrix type image sensing panel lb, a schematic structural diagram of an image sensing pixels preferred embodiment of the present invention, while FIG. 4B is a schematic diagram of an equivalent circuit of the image sensing pixels sensing 4A of FIG.

[0066]与图1A及图1B主要的不同在于,于图4A及图4B的主动矩阵式影像感测面板lb中, 导电层C1与第一端点电极E1系为同一层的结构,使得导电层C1(第二栅极)与感光元件p之第一端点电极E1电性连接。 [0066] FIGS. 1A and 1B with the major difference is that, in the active matrix type image sensing panel lb FIGS. 4A and 4B, the conductive layer and the first terminal electrode E1 C1-based layer with a structure such that the conductive layer C1 (second gate) terminal connected to the first electrode E1 of electrically photosensitive element p. 也可以说,第一端点电极E1由感光元件P-直延伸至薄膜晶体管元件T之上,以将第一端点电极E1当成薄膜晶体管元件T上的导电层(实际上可不用设置导电层),因此,使得感光元件P位于薄膜晶体管元件T上。 It can be said, first the P-terminal electrode E1 to the linear member extending from the photosensitive element over the thin film transistor with T, the first terminal electrode E1 as a conductive layer on the thin film transistor elements T (in fact be provided without conducting layer ), so that the photosensitive member P is positioned on the thin film transistor elements T. 另外,于感光元件P之上设置另一导电层C 3,而导电层C3可连接至参考电压V,以提供偏压给感光元件P。 Further, another conductive layer disposed over the photosensitive element C 3 P, C3 and the conductive layer may be connected to a reference voltage V, to provide a bias voltage to the photosensitive member P. 在其它的实施态样中, 也可只延伸感光元件P之第一端点电极E1,而不将感光元件P的其它部分设置于薄膜晶体管元件T之上。 In further aspects of embodiments, the end may also extend only a first electrode E1 of the photosensitive element P, and not other portions of the photosensitive member P is disposed on the thin film transistor elements T.

[0067]由于光线进入感光元件P时,可激发感光元件P而产生电子电洞对,并藉由参考电压V施加一负极性的偏压给感光元件P,使得电子电洞对分离。 [0067] When light enters the photosensitive member due to the P, P excitable photosensitive member to generate electron-hole pairs and the reference voltage V is applied by a negative bias to the photosensitive member P, such that electron-hole pair separation. 因此,当感光元件P照光之后所产生的电子往感光元件P的第一端点电极E1移动,进而可使第一端点电极E1及薄膜晶体管元件T之第二电极E4的电位下降。 Thus, photosensitive member P when the electron illumination generated toward the first end of the electrode E1 moves photosensitive member P, and thus make the potential of the first electrode E1 and the second electrode terminal E4 of the thin film transistor elements T decreased. 本实施态样系将感光元件P的第一端点电极价因照光而产生的电位下降(负极性电压)直接加载于薄膜晶体管元件T上方之导电层C1(此时,导电层C1与第一端点电极E1系为同一层结构),以动态地提供负极性的电压给薄膜晶体管元件T, 一样可使薄膜晶体管元件T的栅极电压与漏极电流的曲线往右侧移动,藉此可提高薄膜晶体管元件T的临界电压,使薄膜晶体管元件T不会被导通而产生漏电流现象。 The system of the present embodiment aspect potential of the first terminal electrode of the photosensitive element P value generated by illumination decreases (negative voltage) is directly loaded onto a conductive layer over the element T C1 of the thin film transistor (At this time, the first conductive layer C1 end of the electrode system E1) to dynamically provide a negative voltage to the same layer structure of the thin film transistor element T, as can curve the gate voltage and the drain current of thin film transistor elements T Wang Youce movement, whereby the can increase the threshold voltage of the thin film transistor elements T, the thin film transistor element T will not be turned on to generate leak current phenomenon.

[0068]另外,请参照图4C所示,其为本发明较佳实施例又一态样之主动矩阵式影像感测面板lc中,一个影像感测像素的结构示意图。 [0068] Further, referring to FIG. 4C, the preferred embodiment of the present invention which is a further aspect of the active matrix type image sensing panel lc, the schematic structure of one embodiment of image sensing pixels.

[0069]与图4A主要的不同在于,于主动矩阵式影像感测面板1(3中,部分第一端点电极E1 系由感光元件P延伸至薄膜晶体管元件T之上,并与导电层Cl直接接触而电性连接。也可以说是,透过感光元件P之第一端点电极E1设置于位于导电层C1上之一通孔03而使第一端点电极E1与导电层C1(第二栅极)电性连接。藉此,于感光元件p照光时,一样可提供动态的负极性电压给薄膜晶体管元件T,提高薄膜晶体管元件T的临界电压,使薄膜晶体管元件T不会被导通而产生漏电流现象。 [0069] FIG. 4A and the main difference is that, in the active matrix type image sensing panel 1 (3, end portions of the first electrode E1 line P to the photosensitive member extending over the thin film transistor elements T, and the conductive layer Cl direct contact is electrically connected can be said that the photosensitive element through the first terminal electrode E1 of P in the conductive layer C1 is provided on the first terminal electrode 03 and the conductive layer E1 C1 one through hole (a second gate electrode) is electrically connected to thereby, at p illumination photosensitive element, may be provided as a dynamic negative voltage to the thin film transistor elements T, increase the threshold voltage of the thin film transistor elements T, the thin film transistor element T will not be turned The leakage current phenomenon.

[0070]此外,请参照图5所示,其为本发明较佳实施例之一种主动矩阵式影像感测装置2 的功能方块示意图。 [0070] In addition, please refer to FIG. 5, a functional block diagram of a preferred embodiment 2 of the active matrix type image sensing device of the present invention which.

[0071] 主动矩阵式影像感测装置2包含一主动矩阵式影像感测面板21及一处理模块22。 [0071] The active matrix type image sensing device 2 comprises an active matrix type image sensing panel 21, and a processing module 22. 其中,主动矩阵式影像感测面板21与处理模块22电性连接,并可为上述实施例之主动矩阵式影像感测面板1~1 c的其中之一,于此不再赘述其内容。 Wherein the active matrix type image sensing panel 21 is electrically connected to the processing module 22, and may be one of the above embodiment wherein the active matrix type image sensing panel 1 ~ 1 c, the content thereof is omitted herein.

[0072] 处理模块22与主动矩阵式影像感测面板21之数据线DL电性连接,并接收主动矩阵式影像感测面板21之感光元件之感光信号以形成一影像数据。 [0072] The processing module 22 is connected to the active matrix type image sensing panel 21 of the data line DL is electrically and receives signals photosensitive active matrix type image sensing panel 21 of the photosensitive member to form an image of the data. 影像数据可经过后续的影像处理以及影像显示而呈现出来。 Image data may be subjected to a subsequent image processing and image display and presented. 另外,处理模块22亦与主动矩阵式影像感测面板21之扫描线SL电性连接,以循序致能扫描线SL而依序读出该等感光信号。 Further, the processing module 22 is also connected to the active matrix type image sensing panel 21 of the scanning line SL electrically, to enable progressive scan line SL and the photosensitive these signals are read out sequentially.

[0073]综上所述,因本发明之主动矩阵式影像感测面板及装置中,薄膜晶体管元件之第一电极与数据线电性连接,第二电极与感光元件之第一端点电极电性连接,第一栅极与扫描线电性连接,而第二栅极与感光元件之第一端点电极或第二端点电极电性连接。 [0073] In summary, the present invention due to the active matrix panel and an image sensing device, a first electrode of the thin film transistor element is electrically connected to the data line, a first terminal electrode and the second electrode of the photosensitive element connected to the first gate is electrically connected to the scanning line and the first endpoint and the second gate electrode of the photosensitive member or the second electrode terminal electrically connected. 藉此,可提高薄膜晶^管元件的临界电压,并于感光元件被光线照射而使第一栅极与第二电极之间的电位差升高时,使薄膜晶体管元件不会被导通而发生漏电流现象。 Thereby, can increase the threshold voltage of the thin film transistor ^ tube element, and when the photosensitive member is raised to a potential difference between the first light irradiation and the second gate electrode, the thin film transistor element is turned on and not leakage current phenomenon. 因此,本发明可避免主动矩阵式影像感测面板及装置产生的漏电流现象所造成的影像感测失真的问题。 Accordingly, the present invention can avoid the problem of active matrix image sensing leakage current distortion phenomenon of the image sensing panel and a generating device caused.

[0074]以上所述仅为举例性,而非为限制性者。 [0074] The foregoing is only illustrative and not a limiting sense. 任何未脱离本发明之精神与范畴,而对其进行之等效修改或变更,均应包含于本发明权利要求范围中。 Any without departing from the spirit and scope of the present invention, and modifications or changes for the equivalent thereof, should be included in the scope of the invention as claimed.

Claims (16)

  1. 1. 一种主动矩阵式影像感测面板,其特征在于,所述的主动矩阵式影像感测面板包括: 一基板;以及一影像感测像素,设置于所述的基板上,并具有: 一扫描线; 一数据线,与所述的扫描线交错设置; 一感光元件,具有一第一端点电极及一第二端点电极,所述的第一端点电极电压大于所述的第二端点电极电压,所述的第二端点电极电性连接至一参考电压,所述的参考电压的极性为负;以及一薄膜晶体管元件,具有一第一电极、一第二电极、一第一栅极及一第二栅极,所述的第一电极与所述的数据线电性连接,所述的第二电极与所述的感光元件之所述的第一端点电极电性连接,所述的第一栅极与所述的扫描线电性连接,所述的第二栅极与所述的感光元件之所述的第一端点电极或所述的第二端点电极电性连接。 1. An active matrix type image sensing panel, wherein, the active matrix type image sensing panel comprising: a substrate; and an image sensor pixels disposed on the substrate and having: a scan lines; a data line, a scanning line of the staggered arrangement; a photosensitive member having a first end electrode and a second electrode terminal, said first terminal electrode voltage is greater than said second endpoint voltage electrode, said second electrode terminal is electrically connected to a reference voltage, the polarity of the reference voltage is negative; and a thin film transistor element having a first electrode, a second electrode, a first gate and a second gate electrode, the data line is electrically connected to the first electrode, the first electrode terminal electrically connected to said second electrode of said photosensitive member and said, the scan line of the first gate electrode is electrically connected to said first end of said photosensitive member electrode of said second gate and said second end of said electrode or electrical connection.
  2. 2. 如权利要求1所述的主动矩阵式影像感测面板,其特征在于,所述的感光元件更具有一第一半导体层、一本质半导体层及一第二半导体层,所述的本质半导体层夹置于所述的第一半导体层与所述的第二半导体层之间。 As claimed in active matrix type image sensing panel according to claim 1 of the intrinsic semiconductors, wherein the photosensitive element further having a first semiconductor layer, the nature of a semiconductor layer and a second semiconductor layer, layer interposed between said first semiconductor layer and the second semiconductor layer.
  3. 3. 如权利要求2所述的主动矩阵式影像感测面板,其特征在于,所述的第一半导体层与所述的第二端点电极直接接触而电性连接,所述的第二半导体层与所述的第一端点电极直接接触而电性连接。 3. The active matrix type image sensing panel according to claim 2, wherein said first semiconductor layer is in direct contact with said second electrode terminal electrically connected to said second semiconductor layer in direct contact with said first electrode terminal electrically connected.
  4. 4. 如权利要求1所述的主动矩阵式影像感测面板,其特征在于,所述的薄膜晶体管元件更具有一通道层,所述的通道层包括一氧化物半导体,所述的氧化物半导体包括氧化物,所述的氧化物包括铟、锌及锡的至少其中之一。 As claimed in active matrix type image sensing panel according to claim 1 of the oxide semiconductor, wherein said thin film transistor element further has a channel layer, the channel layer comprising a semiconductor oxide, comprises an oxide, the oxide comprises at least one of indium, zinc and tin.
  5. 5. 如权利要求1所述的主动矩阵式影像感测面板,其特征在于,所述的第二栅极系透过一导电层与所述的第二端点电极电性连接。 The active matrix type image sensing panel according to claim 1, characterized in that said second gate lines connected to a second terminal through a electrically conductive electrode layer with said.
  6. 6. 如权利要求1所述的主动矩阵式影像感测面板,其特征在于,所述的第二栅极由所述的薄膜晶体管元件之上延伸至所述的感光元件之上,并与所述的第二端点电极直接接触。 6. The active matrix type image sensing panel according to claim 1, characterized in that said second gate electrode extending from above the thin film transistor element to the above described photosensitive member, and with the a second end of said electrode is in direct contact.
  7. 7. 如权利要求1所述的主动矩阵式影像感测面板,其特征在于,所述的第二栅极与所述的第一端点电极系为同一层,且至少部分所述的第一端点电极由所述的感光元件延伸至所述的薄膜晶体管元件之上。 7. The active matrix type image sensing panel according to claim 1, wherein the first end of the second gate electrode system and the same layer, and at least a first portion of end electrode extending over said photosensitive member to said thin film transistor elements.
  8. 8. 如权利要求1所述的主动矩阵式影像感测面板,其中至少部分所述的第一端点电极由所述的感光元件延伸至所述的薄膜晶体管元件之上,并与所述的第二栅极直接接触。 8. The active matrix type image sensing panel according to claim 1, wherein the first end portion of said electrode extending at least from said photosensitive member to above the thin film transistor element, and with the a second gate electrode in direct contact.
  9. 9. 一种主动矩阵式影像感测装置,包括: 一主动矩阵式影像感测面板,包含: 一基板; 一影像感测像素,设置于所述的基板上,并具有: 一扫描线; 一数据线,与所述的扫描线交错设置; 一感光元件,具有一第一端点电极及一第二端点电极,所述的第一端点电极电压大于所述的第二端点电极电压,所述的第二端点电极电性连接至一参考电压,所述的参考电压的极性为负; 一薄膜晶体管兀件,具有一第一电极、一第二电极、一第一栅极及一第二栅极,所述的第一电极与所述的数据线电性连接,所述的第二电极与所述的感光元件之所述的第一端点电极电性连接,所述的第一栅极与所述的扫描线电性连接,所述的第二栅极与所述的感光元件之所述的第一端点电极或所述的第二端点电极电性连接;以及一处理模块,分别与主动矩阵式影像感测面板之所 9. An active matrix type image sensing apparatus, comprising: an active matrix type image sensing panel comprising: a substrate; an image sensing pixels, disposed on the upper substrate, and having: a scan line; a data lines, the scanning lines of the staggered arrangement; a photosensitive member having a first end electrode and a second electrode terminal, said first terminal voltage is larger than the second electrode terminal of the electrode voltage, and the said second terminal electrodes electrically connected to a reference voltage, the polarity of the reference voltage is negative; Wu member a thin film transistor having a first electrode, a second electrode, a first gate and a second two gate electrode of said first data line is electrically connected to the first terminal electrode of said second electrode of said photosensitive member and said connector, said first a first electrode of the photosensitive element end of the scanning line is electrically connected to the gate of said second gate and the second terminal electrode is electrically connected to or; and a processing module , respectively, the active matrix panel of the image sensing 的扫描线及所述的数据线电性连接。 A data line electrically connected to the scanning lines and.
  10. 10. 如权利要求9所述的主动矩阵式影像感测装置,其特征在于,所述的感光元件更具有一第一半导体层、一本质半导体层及一第二半导体层,所述的本质半导体层夹置于所述的第一半导体层与所述的第二半导体层之间。 10. The active matrix type image sensing apparatus according to claim 9, wherein said photosensitive member further has a first semiconductor layer, the nature of a semiconductor layer and a second semiconductor layer, the intrinsic semiconductors layer interposed between said first semiconductor layer and the second semiconductor layer.
  11. 11. 如权利要求10所述的主动矩阵式影像感测装置,其特征在于,所述的第一半导体层与所述的第二端点电极直接接触而电性连接,所述的第二半导体层与所述的第一端点电极直接接触而电性连接。 11. The active matrix type image sensing apparatus according to claim 10, wherein said first semiconductor layer is in direct contact with said second electrode terminal electrically connected to said second semiconductor layer in direct contact with said first electrode terminal electrically connected.
  12. 12. 如权利要求9所述的主动矩阵式影像感测装置,其特征在于,所述的薄膜晶体管元件更具有一通道层,所述的通道层包括一氧化物半导体,所述的氧化物半导体包括氧化物, 所述的氧化物包括铟、锌及锡的至少其中之一。 12. The active matrix type image sensing apparatus according to claim 9 oxide semiconductor claim, wherein said thin film transistor element further has a channel layer, the channel layer comprising a semiconductor oxide, comprises an oxide, the oxide comprises at least one of indium, zinc and tin.
  13. 13. 如权利要求9所述的主动矩阵式影像感测装置,其特征在于,所述的第二栅极系透过一导电层与所述的第二端点电极电性连接。 13. The active matrix type image sensing apparatus according to claim 9, wherein said second gate lines connected to a second terminal through a electrically conductive electrode layer with said.
  14. 14. 如权利要求9所述的主动矩阵式影像感测装置,其特征在于,所述的第二栅极由所述的薄膜晶体管元件之上延伸至所述的感光元件之上,并与所述的第二端点电极直接接触0 14. The active matrix type image sensing apparatus according to claim 9, wherein said second gate electrode extending from above the thin film transistor element to the above described photosensitive member, and with the a second end of said electrode is in direct contact 0
  15. 15. 如权利要求9所述的主动矩阵式影像感测装置,其特征在于,所述的第二栅极与所述的第一端点电极系为同一层,且至少部分所述的第一端点电极由所述的感光元件延伸至所述的薄膜晶体管元件之上。 15. The active matrix type image sensing apparatus according to claim 9, wherein the first end of the second gate electrode system and the same layer, and at least a first portion of end electrode extending over said photosensitive member to said thin film transistor elements.
  16. 16. 如权利要求9所述的主动矩阵式影像感测装置,其中至少部分所述的第一端点电极由所述的感光元件延伸至所述的薄膜晶体管元件之上,并与所述的第二栅极直接接触。 16. The active matrix type image sensing apparatus according to claim 9, wherein the first end portion of said electrode extending at least from said photosensitive member to above the thin film transistor element, and with the a second gate electrode in direct contact.
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CN1925162A (en) * 2005-08-31 2007-03-07 佳能株式会社 Radiation detecting apparatus, radiation imaging apparatus and radiation imaging system
CN101013711A (en) * 2006-01-30 2007-08-08 佳能株式会社 Imaging apparatus, radiation imaging apparatus, and manufacturing methods therefor

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