CN103972249A - Active matrix image sensing panel and active matrix image sensing device - Google Patents
Active matrix image sensing panel and active matrix image sensing device Download PDFInfo
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- CN103972249A CN103972249A CN201310046161.XA CN201310046161A CN103972249A CN 103972249 A CN103972249 A CN 103972249A CN 201310046161 A CN201310046161 A CN 201310046161A CN 103972249 A CN103972249 A CN 103972249A
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Abstract
The invention discloses an active matrix image sensing panel which comprises a substrate and an image sensing pixel. The image sensing pixel is arranged on the substrate and is provided with a scanning line, a data line, a photosensitive element and a thin-film transistor element. The data line and the scanning line are staggered on each other. The photosensitive element is provided with a first end point electrode and a second end point electrode, and voltages of the first end point electrode are higher than voltages of the second end point electrode. The thin-film transistor element is provided with a first electrode, a second electrode, a first gate and a second gate, the first electrode is electrically connected with the data line, the second electrode is electrically connected with the first end point electrode of the photosensitive element, the first gate is electrically connected with the scanning line, and the second gate is electrically connected with the first end point electrode or the second end point electrode of the photosensitive element. The invention further discloses an active matrix image sensing device. The active matrix image sensing panel and the active matrix image sensing device have the advantage that the problem of image sensing distortion due to current leakage of an existing active matrix image sensing panel and an existing active matrix image sensing device can be solved.
Description
Technical field
The present invention system is about a kind of image sensing panel and device, especially in regard to a kind of active matrix image sensing panel and device.
Background technology
Traditional X-ray photoimaging technology system utilizes imaging film to receive the exposure of X-ray and imaging, but in recent years, development due to semiconductor technology, X-ray imaging technique also evolves to and utilizes flat digitisation image sensing panel to carry out imaging, it is so-called numerical digit pneumoradiography (digital radiography, DR) technology.
Hereby the principle of numerical digit pneumoradiography technology is summarized as follows.In the time of in X-ray enters Image sensor apparatus, can be first through a scintillation crystal layer (scintillator), and mat its change X-ray into visible ray, by photo-sensitive cell, sensed visible ray is changed into the signal of telecommunication again, be connected to afterwards thin-film transistor element, from data wire, be read out again, more become image after image processing.Wherein, photo-sensitive cell also proceeds to silica-based photodiode from charge coupled cell (charge coupled device, CCD) originally.In current technology, do not need scintillation crystal layer yet, but directly X-ray is changed into the signal of telecommunication.
Yet known conventional thin-film transistor element is for example metal oxide thin-film transistor, and photo-sensitive cell is for example NIP type amorphous silicon optical diode.Wherein, the general system of the grid of metal oxide thin-film transistor operates in the voltage (for example-5V) of negative polarity, and the polarity of the bias voltage of NIP type amorphous silicon optical diode is also negative polarity.Therefore, the electrons producing after photo-sensitive cell irradiation moves toward the bottom electrode of photo-sensitive cell, and then the current potential of the source electrode of bottom electrode and thin-film transistor is declined.But, if the current potential of the source electrode of bottom electrode and thin-film transistor is because of high-intensity light irradiation continuous decrease, make the potential difference between grid and source electrode continue to rise, and then while being greater than the critical voltage (Threshold voltage) of thin-film transistor, thin-film transistor will be switched on and make source electrode start electric leakage to data wire, so, image processing module is processed and while obtaining image, will be caused the problem of sensing distortion.
Therefore, how to provide a kind of active matrix image sensing panel and device, can avoid the leakage phenomenon of active matrix image sensing panel and device generation, cause the problem of image sensing distortion, become one of important topic.
Summary of the invention
Because above-mentioned problem, the present invention's object, for a kind of leakage phenomenon of avoiding generation is provided, causes active matrix image sensing panel and the active matrix Image sensor apparatus of the problem of image sensing distortion.
For reaching above-mentioned purpose, according to a kind of active matrix image sensing panel of the present invention, comprise a substrate and an image sensing pixel.Image sensing pixel is arranged on substrate, and has one scan line, a data wire, a photo-sensitive cell and a thin-film transistor element.Data wire and scan line are crisscross arranged.Photo-sensitive cell has a first end point electrode and one second end points electrode, and first end point electrode voltage is greater than the second end points electrode voltage.Thin-film transistor element has one first electrode, one second electrode, a first grid and a second grid, the first electrode and data wire are electrically connected, the first end point electrode of the second electrode and photo-sensitive cell is electrically connected, first grid and scan line are electrically connected, and the first end point electrode of second grid and photo-sensitive cell or the second end points electrode are electrically connected.
For reaching above-mentioned purpose, according to a kind of active matrix Image sensor apparatus of the present invention, comprise an active matrix image sensing panel and a processing module.Image sensing pixel is arranged on substrate, and has one scan line, a data wire, a photo-sensitive cell and a thin-film transistor element.Data wire and scan line are crisscross arranged.Photo-sensitive cell has a first end point electrode and one second end points electrode, and first end point electrode voltage is greater than the second end points electrode voltage.Thin-film transistor element has one first electrode, one second electrode, a first grid and a second grid, the first electrode and data wire are electrically connected, the first end point electrode of the second electrode and photo-sensitive cell is electrically connected, first grid and scan line are electrically connected, and the first end point electrode of second grid and photo-sensitive cell or the second end points electrode are electrically connected.Processing module is electrically connected with scan line and the data wire of active matrix image sensing panel respectively.
In one embodiment, the second end points electrode is electrically connected to a reference voltage, and the polarity of reference voltage is negative.
In one embodiment, photo-sensitive cell has more one first semiconductor layer, extrinsic semiconductor's layer and one second semiconductor layer, and extrinsic semiconductor's layer is folded between the first semiconductor layer and the second semiconductor layer.
In one embodiment, the first semiconductor layer directly contacts and is electrically connected with the second end points electrode, and the second semiconductor layer directly contacts and is electrically connected with first end point electrode.
In one embodiment, thin-film transistor element has more a channel layer, and channel layer comprises monoxide semiconductor, and oxide semiconductor comprises oxide, oxide comprise indium, zinc and tin at least one of them.
In one embodiment, second gate polar system sees through a conductive layer and the electric connection of the second end points electrode.
In one embodiment, second grid is by extending on photo-sensitive cell on thin-film transistor element, and directly contacts with the second end points electrode.
In one embodiment, second grid and first end point electrode are same layer, and first end point electrode is extended on thin-film transistor element by photo-sensitive cell at least partly.
In one embodiment, first end point electrode is extended on thin-film transistor element by photo-sensitive cell at least partly, and directly contacts with second grid.
From the above, in active matrix image sensing panel and device because of the present invention, the first electrode of thin-film transistor element and data wire are electrically connected, the first end point electrode of the second electrode and photo-sensitive cell is electrically connected, first grid and scan line are electrically connected, and the first end point electrode of second grid and photo-sensitive cell or the second end points electrode are electrically connected.By this, can improve the critical voltage of thin-film transistor element, and in photo-sensitive cell, by light, be irradiated and when potential difference between first grid and the second electrode is raise, thin-film transistor element can not be switched on and leakage phenomenon occurs.The problem of the image sensing distortion that the leakage phenomenon that therefore, the present invention can avoid active matrix image sensing panel and device to produce causes.
Accompanying drawing explanation
Figure 1A is in a kind of active matrix image sensing panel of preferred embodiment of the present invention, the structural representation of an image sensing pixel.
Figure 1B is the schematic equivalent circuit of the image sensing pixel of Figure 1A.
Fig. 2 is in the present invention's active matrix image sensing panel, the voltage of thin-film transistor element and the curve synoptic diagram of electric current.
Fig. 3 and Fig. 4 A are respectively in the active matrix image sensing panel of another aspect of preferred embodiment of the present invention, the structural representation of an image sensing pixel; Fig. 4 B is the schematic equivalent circuit of the image sensing pixel of Fig. 4 A.
Fig. 4 C is depicted as in the active matrix image sensing panel of the another aspect of preferred embodiment of the present invention, the structural representation of an image sensing pixel.
Fig. 5 is the function block schematic diagram of a kind of active matrix Image sensor apparatus of preferred embodiment of the present invention.
1,1a～1c, 21: active matrix image sensing panel
11: substrate
2: active matrix Image sensor apparatus
22: processing module
C1: conductive layer (second grid)
C2～C3: conductive layer
DL: data wire
E1: first end point electrode
E2: the second end points electrode
E3: the first electrode
E4: the second electrode
ES: etch stop layer
G:(first) grid
I1～I3: insulating barrier
I4: protective layer
O1～O3: through hole
P: photo-sensitive cell
P1: the first semiconductor layer
P2: extrinsic semiconductor's layer
P3: the second semiconductor layer
SL: scan line
T: thin-film transistor element
T11: gate dielectric
T12: channel layer
V: reference voltage
Embodiment
Hereinafter with reference to correlative type, active matrix image sensing panel and device according to preferred embodiment of the present invention are described, wherein identical element is illustrated the reference marks with identical.
Shown in Figure 1A and Figure 1B, wherein, Figure 1A is in a kind of active matrix image sensing panel 1 of preferred embodiment of the present invention, the structural representation of an image sensing pixel, and the schematic equivalent circuit of the image sensing pixel that Figure 1B is Figure 1A.
Active matrix image sensing panel 1 is to comprise that plural image sensing pixel is arranged on a substrate 11.On the implementation, substrate 11 can be the material of a light-permeable, be for example glass, quartz or analog, plastic cement, rubber, glass fibre or other macromolecular materials, preferably can be a borate alkali-free glass substrate (alumino silicate glass substrate).Substrate 11 also can be a light tight material, for example, be metal-glass fiber composite plate or metal-ceramic composite plate.
As shown in Figure 1A and Figure 1B, in these image sensing pixels, at least the image sensing pixel of one of them has one scan line SL, a data wire DL, a photo-sensitive cell P, a thin-film transistor element T and a conductive layer C1.In addition, the image sensing pixel of the present embodiment more can have a conductive layer C2, an insulating barrier I1, an insulating barrier I2, an insulating barrier I3 and a protective layer I4.Wherein, scan line SL, data wire DL, photo-sensitive cell P, thin-film transistor element T, conductive layer C1, C2, insulating barrier I1～I3 and protective layer I4 system are arranged on substrate 11.The person of should be noted, Figure 1A only depicts 1 image sensing pixel, and with regard to active matrix image sensing panel 1, it can have a plurality of image sensing pixels and be array setting, and many data wire DL, multi-strip scanning line SL systems are crisscross arranged.
Data wire DL and scan line SL are crisscross arranged.Photo-sensitive cell P has a first end point electrode E1 and one second end points electrode E2.First end point electrode E1 or the second end points electrode E2 can be a transparency electrode, and its material for example can be tin indium oxide (ITO).In addition, photo-sensitive cell P has more one first semiconductor layer P1, an essence (Intrinsic) semiconductor layer P2 and one second semiconductor layer P3, and the layer P2 of extrinsic semiconductor is between the first semiconductor layer P1 and the second semiconductor layer P3.Wherein, the first semiconductor layer P1 directly contacts and is electrically connected with the second end points electrode E2, and the second semiconductor layer P3 directly contacts and is electrically connected with first end point electrode E1.In this, photo-sensitive cell P is the optical diode of a NIP type, and makes with amorphous silicon (a-Si) thin film deposition.In the present embodiment, the first semiconductor layer is for example P type semiconductor, and the second semiconductor layer is N type semiconductor, certainly not as limit.In addition, as shown in Figure 1B, the second end points electrode E2 is electrically connected to a reference voltage V, and reference voltage V can provide photo-sensitive cell P mono-bias voltage, and is reverse voltage, makes first end point electrode E1 voltage be greater than the second end points electrode voltage E2.
Thin-film transistor element T is for example N-type amorphous silicon film transistor, and has a grid G, a gate dielectric T11, a channel layer T12, one first electrode E3 and one second electrode E4.Grid G is arranged on substrate 11, and is electrically connected with scan line SL.The material of grid G is the single or multiple lift structure that metal (being for example aluminium, copper, silver, molybdenum or titanium) or its alloy form.Part drives the wire of signal in order to transmission, can use and the structure of grid G with layer and same processing procedure, and be electrical connected each other, for example scan line.Gate dielectric T11 is arranged in grid G, and it is for example organosilicon oxygen compound that gate dielectric T11 system can be organic material, or inorganic is for example the sandwich construction of silicon nitride, silica, silicon oxynitride, carborundum, aluminium oxide, hafnium oxide or above-mentioned material.Gate dielectric T11 needs complete cover gate G, and can select part or all of covered substrate 11.
The position of the relative grid G of channel layer T12 is arranged on gate dielectric T11.On the implementation, channel layer T12 for example can comprise monoxide semiconductor.Wherein, aforementioned oxide semiconductor comprises oxide, and oxide comprise indium, gallium, zinc and tin one of them, be for example and without limitation to indium oxide gallium zinc (Indium Gallium Zinc Oxide, IGZO), so that thin-film transistor element T is a metal oxide thin-film transistor.Wherein, metal oxide thin-film transistor has low-leakage current (leakage current between 10-14 ampere to 10-18 ampere), high electronics energy gap (approximately 3.1 electron-volts) and to the characteristic such as irradiation is insensitive, is a gain-type (Enhancement mode) transistor.
It is upper that the first electrode E3 and the second electrode E4 are arranged at respectively channel layer T12, and the first electrode E3 contacts with channel layer T12 respectively with the second electrode E4, and in the channel layer T12 of thin-film transistor element T, not during conducting, both are electrical separation.Wherein, the first electrode E3 is for example the drain electrode of thin-film transistor element T, and is electrically connected with data wire DL, and the second electrode E4 is the source electrode of thin-film transistor element T, and is electrically connected with the first end point electrode E1 of photo-sensitive cell P.In this, be to see through to be arranged at insulating barrier I1 and one of the upper through hole O1 of insulating barrier I2, and see through first end point electrode E1 and extend toward the direction of thin-film transistor element T, make first end point electrode E1 and the second electrode E4 electric connection.The material of the first electrode E3 and the second electrode E4 can be the single or multiple lift structure that metal (for example aluminium, copper, silver, molybdenum or titanium) or its alloy form.In addition, part drives the wire of signal in order to transmission, can use with the first electrode E3 and the second electrode E4 with layer and the structure of same processing procedure, for example data wire.
It is worth mentioning that, the first electrode E3(of the thin-film transistor element T of the present embodiment is also called drain electrode below) also can be arranged at an etch-stop (etch stop) layer ES above with the second electrode (being also called below source electrode), and source electrode contacts with channel layer T12 with the opening of the difference self etching stop layer ES of one end system of drain electrode.Wherein, it is for example organosilicon oxygen compound that etch stop layer ES system can be organic material, or the individual layer inorganic sandwich construction of silicon nitride, silica, silicon oxynitride, carborundum, aluminium oxide, hafnium oxide or above-mentioned material combination for example.But, in other embodiment, also source electrode and drain electrode directly can be arranged to channel layer T12 upper, and not need etch stop layer ES.
Conductive layer C1 system is oppositely arranged with grid G, and the first end point electrode E1 of conductive layer C1 and photo-sensitive cell P or the second end points electrode E2 electric connection.In the present embodiment, conductive layer C1 system is positioned on grid G.Wherein, grid G is called the first grid of thin-film transistor element T, conductive layer C1 is called the second grid of thin-film transistor element T, and first grid (grid G) and second grid (conductive layer C1) are relative and establish, and insulating barrier I1 system is arranged at conductive layer C1(second grid) and the first electrode E3 or the second electrode E4 between.In addition, insulating barrier I2 covers conductive layer C1 completely, and insulating barrier I3 is arranged on insulating barrier I2.In addition, conductive layer C1 system sees through and is positioned at insulating barrier I2 and one of the upper through hole O2 of insulating barrier I3, and seeing through conductive layer C2, by through hole O2, to extend to the second end points electrode E2 upper, makes conductive layer C1(second grid) be electrically connected with the second end points electrode E2.Wherein, conductive layer C2 also can be connected to reference voltage V, so that photo-sensitive cell P mono-bias voltage (Figure 1A does not show) to be provided.The material that conductive layer C1, C2 can be printing opacity (for example ITO) or light tight (for example metal or alloy) forms.In this, conductive layer C1 is for example a metal level, and transparency conducting layer be take as example in the material of conductive layer C2 system.In addition, the material of insulating barrier I1 is for example silica (SiOx), the material of insulating barrier I2 is for example silicon nitride (SiNx), and the material of insulating barrier I3 for example comprises silicon nitride (SiNx) or tetrafluoroethene-perfluorinated alkoxy vinyl ether copolymer (Polyfluoroalkoxy, PFA).In addition, protective layer I4 is arranged on thin-film transistor element T and photo-sensitive cell P, and is positioned on conductive layer C2 and insulating barrier I3.In this, the material of protective layer I4 can be identical with the material of insulating barrier I3, and for example can comprise silicon nitride or tetrafluoroethene-perfluorinated alkoxy vinyl ether copolymer.
In addition, please refer to shown in Fig. 2, in its active matrix image sensing panel 1 that is the present invention, the voltage of thin-film transistor element T and the curve synoptic diagram of electric current.In this, abscissa is the voltage of grid G (first grid), and ordinate is the rear drain current of normalization.
In the present embodiment, because there is a conductive layer C1(second grid on grid G (first grid)), and the second end points electrode E2 of conductive layer C1 and photo-sensitive cell P is electrically connected.In addition, the second end points electrode E2 is electrically connected to reference voltage V, and reference voltage V is the bias voltage of photo-sensitive cell P, and the polarity of voltage of reference voltage V is for negative, makes first end point electrode E1 voltage be greater than the second end points electrode E1 voltage.By the conductive layer C1(second grid with negative polarity), can be by passage (back channel after the channel layer T12 of thin-film transistor element T, being between channel layer T12 and etch stop layer ES) electronic home accumulated goes out, and can improve by this critical voltage (Thresholdvoltage) of thin-film transistor element T.In this, critical voltage by conductive layer C1 with raising thin-film transistor element T, also can claim this thin-film transistor element T to there is the design of bigrid (dual-gate) (but in fact, conductive layer C1 does not have the original function of grid G of thin-film transistor element T).
As shown in Figure 2, when conductive layer C1 is connected with the reference voltage V of negative polarity, and its magnitude of voltage more and more hour (for example by 0 ,-1V ... ,-10V), the movement of turning right of the grid voltage of thin-film transistor element T and the curve of drain current will be made, by this, can improve the critical voltage (for example critical voltage is up increased to about 6V by approaching 0V) of thin-film transistor element T.For example, the magnitude of voltage that as reference voltage V is during for-10V, is connected to reference voltage V by conductive layer C1, and the voltage that makes conductive layer C1 is also-10V, the critical voltage that can improve thin-film transistor element T to+more than 6V().Therefore, when the electronics producing after the photo-sensitive cell P irradiation moves toward the second electrode E4 of first end point electrode E1 and thin-film transistor element T, although can make the current potential of the second electrode E4 of thin-film transistor element T decline, and then make grid G and the second electrode E4(source electrode) between potential difference VGS continue rise (being that negative value is more and more less), but because the critical voltage of thin-film transistor element T is because the setting of conductive layer C1 improves, therefore thin-film transistor element T can not be switched on, therefore, thin-film transistor element T does not have the phenomenon of leakage current.
In addition, active matrix image sensing panel 1 can more comprise a wavelength regulating layer (figure does not show), and it is to be arranged on image sensing pixel.Wherein, wavelength regulating layer can be a scintillation crystal layer (scintillator), in order to the light of income is converted to the light of specific wavelength, for example, converts X-ray to visible ray, in order to photo-sensitive cell P sensitization.Certainly, in the situation that photo-sensitive cell P can directly change into the signal of telecommunication by X-ray, wavelength regulating layer can omit.
In addition, please refer to shown in Fig. 3, in its active matrix image sensing panel 1a that is another aspect of preferred embodiment of the present invention, the structural representation of an image sensing pixel.
Different being that Fig. 3 is main from Figure 1A, in the structure of the image sensing pixel of Fig. 3, the second end points electrode E2 that conductive layer C1 does not see through another conductive layer and photo-sensitive cell P is electrically connected, but conductive layer C1 is by directly extending on photo-sensitive cell P on thin-film transistor element T, and directly contact with the second end points electrode E2.In other words, it is upper that through hole O2 system is formed at insulating barrier I2, I3, and conductive layer C1 system is arranged in through hole O2, to go up by directly extending to photo-sensitive cell P on thin-film transistor element T, directly directly to contact and to be electrically connected with the second end points electrode E2.Wherein, conductive layer C1 is the material of light-permeable, and can be for example tin indium oxide (ITO).
In addition, please refer to shown in Fig. 4 A and Fig. 4 B, wherein, Fig. 4 A is in the active matrix image sensing panel 1b of the another aspect of preferred embodiment of the present invention, the structural representation of an image sensing pixel, and Fig. 4 B is the schematic equivalent circuit of the image sensing pixel of Fig. 4 A.
From Figure 1A and main different being of Figure 1B, in the active matrix image sensing panel 1b of Fig. 4 A and Fig. 4 B, conductive layer C1 and first end point electrode E1 are the structure of same layer, make conductive layer C1(second grid) be electrically connected with the first end point electrode E1 of photo-sensitive cell P.Also can say, first end point electrode E1 is extended on thin-film transistor element T by photo-sensitive cell P always, so that first end point electrode E1 is treated as to the conductive layer (in fact conductive layer can be set) on thin-film transistor element T, therefore, photo-sensitive cell P is positioned on thin-film transistor element T.In addition, another conductive layer C3 is set on photo-sensitive cell P, and conductive layer C3 can be connected to reference voltage V, to provide bias voltage to photo-sensitive cell P.In other enforcement aspect, also can only extend the first end point electrode E1 of photo-sensitive cell P, and the other parts of photo-sensitive cell P are not arranged on thin-film transistor element T.
While entering photo-sensitive cell P due to light, can excite photo-sensitive cell P and produce electronics electricity hole pair, and the bias voltage that applies a negative polarity by reference voltage V is to photo-sensitive cell P, makes electronics electricity hole to separation.Therefore, the electronics producing after photo-sensitive cell P irradiation moves toward the first end point electrode E1 of photo-sensitive cell P, and then can make the current potential of the second electrode E4 of first end point electrode E1 and thin-film transistor element T decline.This enforcement aspect system produces the first end point electrode E1 of photo-sensitive cell P current potential because of irradiation declines conductive layer C1(that (reverse voltage) directly load on thin-film transistor element T top now, conductive layer C1 and first end point electrode E1 are same layer structure), dynamically to provide the voltage of negative polarity to thin-film transistor element T, the same can make the movement of turning right of the grid voltage of thin-film transistor element T and the curve of drain current, can improve the critical voltage of thin-film transistor element T by this, thin-film transistor element T can not be switched on and produce leakage phenomenon.
In addition, please refer to shown in Fig. 4 C, in its active matrix image sensing panel 1c that is the another aspect of preferred embodiment of the present invention, the structural representation of an image sensing pixel.
Different be main from Fig. 4 A, in active matrix image sensing panel 1c, part first end point electrode E1 system is extended on thin-film transistor element T by photo-sensitive cell P, and directly contacts and be electrically connected with conductive layer C1.Also can be described as, the first end point electrode E1 that sees through photo-sensitive cell P is arranged at and is positioned at one of the upper through hole O3 of conductive layer C1 and makes first end point electrode E1 and conductive layer C1(second grid) electric connection.By this, when photo-sensitive cell P irradiation, the same can provide dynamic reverse voltage to thin-film transistor element T, improve the critical voltage of thin-film transistor element T, thin-film transistor element T can not be switched on and produce leakage phenomenon.
In addition, please refer to shown in Fig. 5 the function block schematic diagram of its a kind of active matrix Image sensor apparatus 2 that is preferred embodiment of the present invention.
Active matrix Image sensor apparatus 2 comprises an active matrix image sensing panel 21 and a processing module 22.Wherein, active matrix image sensing panel 21 is electrically connected with processing module 22, and can be one of them of active matrix image sensing panel 1～1c of above-described embodiment, in this, repeats no more its content.
Processing module 22 is electrically connected with the data wire DL of active matrix image sensing panel 21, and the photoreceptor signal of photo-sensitive cell that receives active matrix image sensing panel 21 is to form an image data.Image data can present through follow-up image processing and image display.In addition, processing module 22 is also electrically connected with the scan line SL of active matrix image sensing panel 21, with activation scan line SL in proper order, sequentially reads these photoreceptor signals.
In sum, in active matrix image sensing panel and device because of the present invention, the first electrode of thin-film transistor element and data wire are electrically connected, the first end point electrode of the second electrode and photo-sensitive cell is electrically connected, first grid and scan line are electrically connected, and the first end point electrode of second grid and photo-sensitive cell or the second end points electrode are electrically connected.By this, can improve the critical voltage of thin-film transistor element, and in photo-sensitive cell, by light, be irradiated and when potential difference between first grid and the second electrode is raise, thin-film transistor element can not be switched on and leakage phenomenon occurs.The problem of the image sensing distortion that the leakage phenomenon that therefore, the present invention can avoid active matrix image sensing panel and device to produce causes.
The foregoing is only illustrative, but not be restricted person.Any spirit and category that does not depart from the present invention, and the equivalent modifications that it is carried out or change all should be contained in the claims in the present invention scope.
Claims (18)
1. an active matrix image sensing panel, is characterized in that, described active matrix image sensing panel comprises:
One substrate; And
One image sensing pixel, is arranged on described substrate, and has:
One scan line;
One data wire, is crisscross arranged with described scan line;
One photo-sensitive cell, has a first end point electrode and one second end points electrode, and described first end point electrode voltage is greater than the second described end points electrode voltage; And
One thin-film transistor element, there is one first electrode, one second electrode, a first grid and a second grid, the first described electrode and described data wire are electrically connected, the described first end point electrode of the second described electrode and described photo-sensitive cell is electrically connected, described first grid and described scan line are electrically connected, and the described first end point electrode of described second grid and described photo-sensitive cell or the second described end points electrode are electrically connected.
2. active matrix image sensing panel as claimed in claim 1, is characterized in that, the second described end points electrode is electrically connected to a reference voltage, and the polarity of described reference voltage is negative.
3. active matrix image sensing panel as claimed in claim 1, it is characterized in that, described photo-sensitive cell has more one first semiconductor layer, extrinsic semiconductor's layer and one second semiconductor layer, between the first semiconductor layer described in described extrinsic semiconductor's layer is folded in and the second described semiconductor layer.
4. active matrix image sensing panel as claimed in claim 3, it is characterized in that, the first described semiconductor layer directly contacts and is electrically connected with the second described end points electrode, and the second described semiconductor layer directly contacts and is electrically connected with described first end point electrode.
5. active matrix image sensing panel as claimed in claim 1, it is characterized in that, described thin-film transistor element has more a channel layer, described channel layer comprises monoxide semiconductor, described oxide semiconductor comprises oxide, described oxide comprise indium, zinc and tin at least one of them.
6. active matrix image sensing panel as claimed in claim 1, is characterized in that, described second gate polar system sees through a conductive layer and described the second end points electrode electric connection.
7. active matrix image sensing panel as claimed in claim 1, is characterized in that, described second grid is by extending on described thin-film transistor element on described photo-sensitive cell, and directly contacts with the second described end points electrode.
8. active matrix image sensing panel as claimed in claim 1, it is characterized in that, described second grid and described first end point electrode are same layer, and described first end point electrode is extended on described thin-film transistor element by described photo-sensitive cell at least partly.
9. active matrix image sensing panel as claimed in claim 1, wherein described first end point electrode is extended on described thin-film transistor element by described photo-sensitive cell at least partly, and directly contacts with described second grid.
10. an active matrix Image sensor apparatus, comprising:
One active matrix image sensing panel, comprises:
One substrate;
One image sensing pixel, is arranged on described substrate, and has:
One scan line;
One data wire, is crisscross arranged with described scan line;
One photo-sensitive cell, has a first end point electrode and one second end points electrode, and described first end point electrode voltage is greater than the second described end points electrode voltage;
One thin-film transistor element, there is one first electrode, one second electrode, a first grid and a second grid, the first described electrode and described data wire are electrically connected, the described first end point electrode of the second described electrode and described photo-sensitive cell is electrically connected, described first grid and described scan line are electrically connected, and the described first end point electrode of described second grid and described photo-sensitive cell or the second described end points electrode are electrically connected; And
One processing module, is electrically connected with the described scan line of active matrix image sensing panel and described data wire respectively.
11. active matrix Image sensor apparatus as claimed in claim 10, is characterized in that, the second described end points electrode is electrically connected to a reference voltage, and the polarity of described reference voltage is negative.
12. active matrix Image sensor apparatus as claimed in claim 10, it is characterized in that, described photo-sensitive cell has more one first semiconductor layer, extrinsic semiconductor's layer and one second semiconductor layer, between the first semiconductor layer described in described extrinsic semiconductor's layer is folded in and the second described semiconductor layer.
13. active matrix Image sensor apparatus as claimed in claim 12, it is characterized in that, the first described semiconductor layer directly contacts and is electrically connected with the second described end points electrode, and the second described semiconductor layer directly contacts and is electrically connected with described first end point electrode.
14. active matrix Image sensor apparatus as claimed in claim 10, it is characterized in that, described thin-film transistor element has more a channel layer, described channel layer comprises monoxide semiconductor, described oxide semiconductor comprises oxide, described oxide comprise indium, zinc and tin at least one of them.
15. active matrix Image sensor apparatus as claimed in claim 10, is characterized in that, described second gate polar system sees through a conductive layer and described the second end points electrode electric connection.
16. active matrix Image sensor apparatus as claimed in claim 10, is characterized in that, described second grid is by extending on described thin-film transistor element on described photo-sensitive cell, and directly contact with the second described end points electrode.
17. active matrix Image sensor apparatus as claimed in claim 10, it is characterized in that, described second grid and described first end point electrode are same layer, and described first end point electrode is extended on described thin-film transistor element by described photo-sensitive cell at least partly.
18. active matrix Image sensor apparatus as claimed in claim 10, wherein at least part of described first end point electrode is extended on described thin-film transistor element by described photo-sensitive cell, and directly contacts with described second grid.
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| CN201310046161.XA CN103972249B (en) | 2013-02-05 | 2013-02-05 | Active matrix image sensing panel and active matrix image sensing device |
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| CN111987112A (en) * | 2019-05-22 | 2020-11-24 | 群创光电股份有限公司 | Radiation sensing device |
| CN113362721A (en) * | 2021-06-24 | 2021-09-07 | 武汉华星光电技术有限公司 | Array substrate, array substrate manufacturing method and display panel |
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