CN100505321C - 含非晶硅半导体的垂直滤色片传感器组及其制造方法 - Google Patents

含非晶硅半导体的垂直滤色片传感器组及其制造方法 Download PDF

Info

Publication number
CN100505321C
CN100505321C CNB2004800427622A CN200480042762A CN100505321C CN 100505321 C CN100505321 C CN 100505321C CN B2004800427622 A CNB2004800427622 A CN B2004800427622A CN 200480042762 A CN200480042762 A CN 200480042762A CN 100505321 C CN100505321 C CN 100505321C
Authority
CN
China
Prior art keywords
transducer
semi
sensor
conducting material
sensor groups
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004800427622A
Other languages
English (en)
Chinese (zh)
Other versions
CN1938863A (zh
Inventor
R·B·梅里尔
R·A·马丁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Foveon Inc
Original Assignee
Foveon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foveon Inc filed Critical Foveon Inc
Publication of CN1938863A publication Critical patent/CN1938863A/zh
Application granted granted Critical
Publication of CN100505321C publication Critical patent/CN100505321C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CNB2004800427622A 2004-05-27 2004-05-27 含非晶硅半导体的垂直滤色片传感器组及其制造方法 Expired - Fee Related CN100505321C (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2004/016685 WO2005119790A1 (en) 2004-05-27 2004-05-27 Non-crystalline silicon vertical color filter

Publications (2)

Publication Number Publication Date
CN1938863A CN1938863A (zh) 2007-03-28
CN100505321C true CN100505321C (zh) 2009-06-24

Family

ID=35463140

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800427622A Expired - Fee Related CN100505321C (zh) 2004-05-27 2004-05-27 含非晶硅半导体的垂直滤色片传感器组及其制造方法

Country Status (3)

Country Link
JP (1) JP2008500723A (ja)
CN (1) CN100505321C (ja)
WO (1) WO2005119790A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5223225B2 (ja) * 2007-04-05 2013-06-26 株式会社ニコン 固体撮像装置
JP2010232435A (ja) * 2009-03-27 2010-10-14 Victor Co Of Japan Ltd 固体撮像素子
KR101592010B1 (ko) 2009-07-17 2016-02-05 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
JP5566093B2 (ja) 2009-12-18 2014-08-06 キヤノン株式会社 固体撮像装置
JP6123397B2 (ja) * 2013-03-18 2017-05-10 富士通株式会社 撮像装置
CN103746016B (zh) * 2013-12-30 2016-03-09 沈阳工程学院 可调带隙量子阱结构的不锈钢衬底太阳能电池及制备方法
JP6230637B2 (ja) * 2016-02-10 2017-11-15 キヤノン株式会社 固体撮像装置
FR3060848B1 (fr) * 2016-12-20 2019-05-24 Universite Pierre Et Marie Curie Capteur multi-spectral a photodetecteurs empiles.
DE112021003352T5 (de) * 2020-06-24 2023-04-13 Sony Semiconductor Solutions Corporation Halbleitervorrichtung und elektronische vorrichtung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02188971A (ja) * 1989-01-17 1990-07-25 Mitsubishi Electric Corp 半導体受光素子
DE19613820A1 (de) * 1996-04-09 1997-10-23 Forschungszentrum Juelich Gmbh Struktur mit einer pin- oder nip-Schichtenfolge
US6455908B1 (en) * 2001-03-09 2002-09-24 Applied Optoelectronics, Inc. Multispectral radiation detectors using strain-compensating superlattices
JP2002340688A (ja) * 2001-05-14 2002-11-27 Nippon Telegr & Teleph Corp <Ntt> 波長計測装置および波長計測方法
US6803557B1 (en) * 2002-09-27 2004-10-12 Raytheon Company Photodiode having voltage tunable spectral response
US6753585B1 (en) * 2002-12-05 2004-06-22 National Semiconductor Corporation Vertical color photo-detector with increased sensitivity and compatible video interface

Also Published As

Publication number Publication date
WO2005119790A1 (en) 2005-12-15
CN1938863A (zh) 2007-03-28
JP2008500723A (ja) 2008-01-10

Similar Documents

Publication Publication Date Title
US6841816B2 (en) Vertical color filter sensor group with non-sensor filter and method for fabricating such a sensor group
US6894265B2 (en) Vertical color filter sensor group and semiconductor integrated circuit fabrication method for fabricating same
US7166880B2 (en) Vertical color filter sensor group with carrier-collection elements of different size and method for fabricating such a sensor group
US6914314B2 (en) Vertical color filter sensor group including semiconductor other than crystalline silicon and method for fabricating same
CN100446264C (zh) 制作和cmos电路集成在一起的异质结光电二极管的方法
CN100416241C (zh) 使用三阱结构的有源像素单元成像矩阵中的颜色分离
KR100720483B1 (ko) 수직 칼라 필터 검출기단 및 그 제조방법
US7208811B2 (en) Photo-detecting device
CN100565896C (zh) 具有改进的色串扰的图像传感器
US20060255372A1 (en) Color pixels with anti-blooming isolation and method of formation
US6707080B2 (en) Method for making spectrally efficient photodiode structures for CMOS color imagers
CN100573907C (zh) 垂直滤色片传感器组及其制造所用的半导体集成电路制造方法
CN100505321C (zh) 含非晶硅半导体的垂直滤色片传感器组及其制造方法
CN1943041B (zh) 垂直的滤色片传感器组
WO2005119791A1 (en) Vertical color filter sensor group with carrier-collector elements
CN104882459A (zh) 半导体器件及其制造方法和控制方法
EP4125130A1 (en) Image sensor
WO2008035861A1 (en) A semiconductor device
JPS6154314B2 (ja)
US20050057671A1 (en) Method to filter EM radiation of certain energies using poly silicon
JP5369168B2 (ja) 垂直に積層したセンサーを含む感光性センサー群
JP5759353B2 (ja) 垂直に積層したセンサーを含む感光性センサー群
CN101151735A (zh) 具有全分辨率顶层和较低分辨率下层的垂直滤色片传感器组阵列

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090624

Termination date: 20200527