CN100502023C9 - 采用不对称传输晶体管的有源像素单元 - Google Patents

采用不对称传输晶体管的有源像素单元

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Publication number
CN100502023C9
CN100502023C9 CN200510078777.0A CN200510078777A CN100502023C9 CN 100502023 C9 CN100502023 C9 CN 100502023C9 CN 200510078777 A CN200510078777 A CN 200510078777A CN 100502023 C9 CN100502023 C9 CN 100502023C9
Authority
CN
China
Prior art keywords
active pixel
pixel cells
channel width
image sensor
pass transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
CN200510078777.0A
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English (en)
Other versions
CN1722457A (zh
CN100502023C (zh
CN100502023B9 (zh
Inventor
野崎秀俊
真锅宗平
Original Assignee
豪威科技有限公司
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Application filed by 豪威科技有限公司 filed Critical 豪威科技有限公司
Publication of CN1722457A publication Critical patent/CN1722457A/zh
Publication of CN100502023C publication Critical patent/CN100502023C/zh
Application granted granted Critical
Publication of CN100502023C9 publication Critical patent/CN100502023C9/zh
Publication of CN100502023B9 publication Critical patent/CN100502023B9/zh
Ceased legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

本发明提供了种采用不对称传输晶体管的有源像素单元，如固体成像装置、CMOS图像传感器以及形成在半导体衬底上的有源像素等，该有源像素单元采用种可以减小CMOS图像传感器中浮动扩散节点电容的方法，以改善图像传感器的灵敏度。当减小寄生电容如传输门和浮动节点之间的电容时，所得到的器件的设计要求是检测区域的沟道宽度不同于光电转换元件的沟道宽度，但制备这种器件的要求并不高于制备传统器件时的要求。
CN200510078777.0A 2004-06-14 2005-06-14 采用不对称传输晶体管的有源像素单元 Ceased CN100502023B9 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/867,020 2004-06-14
US10/867,020 US7145122B2 (en) 2004-06-14 2004-06-14 Imaging sensor using asymmetric transfer transistor

Publications (4)

Publication Number Publication Date
CN1722457A CN1722457A (zh) 2006-01-18
CN100502023C CN100502023C (zh) 2009-06-17
CN100502023C9 true CN100502023C9 (zh) 2018-04-24
CN100502023B9 CN100502023B9 (zh) 2018-04-24

Family

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Also Published As

Publication number Publication date
CN1722457A (zh) 2006-01-18
TWI294188B (en) 2008-03-01
US20050274874A1 (en) 2005-12-15
US7145122B2 (en) 2006-12-05
TW200541091A (en) 2005-12-16
EP1610388A1 (en) 2005-12-28
CN100502023C (zh) 2009-06-17

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Legal Events

Date Code Title Description
C06 Publication
C10 Entry into substantive examination
C14 Grant of patent or utility model
CP01 Change in the name or title of a patent holder
CI03 Correction of invention patent
IW01 Full invalidation of patent right
IW01 Full invalidation of patent right