CN100499075C - Electroluminescence device, method of manufacturing electroluminescence device, and electronic apparatus - Google Patents
Electroluminescence device, method of manufacturing electroluminescence device, and electronic apparatus Download PDFInfo
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- CN100499075C CN100499075C CNB200610105833XA CN200610105833A CN100499075C CN 100499075 C CN100499075 C CN 100499075C CN B200610105833X A CNB200610105833X A CN B200610105833XA CN 200610105833 A CN200610105833 A CN 200610105833A CN 100499075 C CN100499075 C CN 100499075C
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Abstract
Provided is a method of manufacturing an electroluminescence device, in which a plurality of pixel forming regions is formed on a substrate, a light emitting element, in which an anode having a light transmission property, a light emission function layer including at least a light emitting layer and a cathode are laminated, is provided in each of the plurality of pixel forming regions, the pixel forming regions include a pixel forming region of first color and a pixel forming region of second color different from the first color, and the anode includes a first anode formed in the pixel forming region of the first color with a first thickness and a second anode formed in the pixel forming region of the second color with a second thickness, including: forming a first transparent conductive film in the pixel forming region of the first color with a thickness obtained by subtracting the second thickness from the first thickness; and forming a second transparent conductive film in the pixel forming region of the second color with the second thickness.
Description
The present invention advocates priority 2005-206708 number to the Japanese patent application that the Japanese patent application of filing an application on July 15th, 2005 was filed an application on July 15th, 2005-206552 number 1, quotes its content here.
Technical field
The present invention relates to the manufacture method and the electronic instrument of electroluminescence device, electroluminescence device.
Background technology
Photohead as the image processing systems such as display unit, digital copier and printer that use in mobile phone, PC and the PDA electronic instruments such as (Personal Digital Assistants), organic electroluminescence device light-emitting devices such as (EL/Electro Luminescence device below are called organic El device) is noticeable.
In this light-emitting device, as realizing the colored structure that shows, from just knowing by each pixel is changed the material that constitutes luminescent layer in the past, thereby penetrate the structure of versicolor light from each pixel.
And it is disclosed as No. 2797883 communique of patent, proposition forms optical resonator between the upper layer side reflector that upper strata one side of lower layer side reflector that lower floor one side of luminescent layer forms and luminescent layer forms, by changing thickness by the pixel electrode of formations such as ITO (Indium Tin Oxide), thereby by the optical length of each pixel change optical resonator, the technology of taking out versicolor light from the emergent light of light-emitting component.Utilize this disclosed technology, constitute from luminescent layer when substrate one side penetrates the organic El device of bottom emissive type of light, with semi-transparent semi-reflecting layer formation lower layer side reflector.In addition, when constituting from luminescent layer when an opposite side with substrate penetrates the organic El device of top emission structure of light, constitute the lower layer side reflector with aluminium or the high metal film of silver-colored isoreflectance.
, when constituting the different anode of thickness, after forming the ITO film, use photoetching technique to form Etching mask, carry out etching on the upper strata of ITO film by the ITO film.Therefore, in order in the pixel of the pixel of the pixel of redness usefulness, green usefulness, blue usefulness, to make the thickness difference of anode, need to repeat 3 the above steps.
As a result, the etching liquid or the etching gas that use during owing to etching ITO film, the lower layer side reflector is etched, produces the reflection characteristic decline in lower layer side reflector or the problems such as shortcoming in lower layer side reflector.The etching in this lower layer side reflector is not limited to the lower layer side reflector from the etching tailend that the ITO film exposes, and when having small hole on the ITO film, might just take place after etching begins.
In addition, in order to change the thickness of anode by each pixel, for example consider the method that changes etching period by above-mentioned per 3 steps., if the etching period difference of each step, then not only the step management becomes difficult, and produces long etching period, thereby produces side problems such as (side edge).
In addition, as mentioned above, by step formation ITO film repeatedly, it is complicated that step becomes, the problem that exists productivity ratio to descend.
Summary of the invention
The objective of the invention is to, the manufacture method and the electronic instrument of a kind of electroluminescence device, electroluminescence device are provided, wherein make a plurality of pixels anode thickness separately different and when forming, be positioned at not deterioration of lower layer side reflector that the optical resonator of lower floor's one side of anode uses.
In addition, the objective of the invention is to, a kind of electroluminescence device, electroluminescent device producing method and electronic instrument are provided, wherein make a plurality of pixels anode thickness separately different and when forming, with more in the past than the step of lacking, than being easier to and forming anode with high accuracy, high display performance can be realized, and cost degradation can be realized.
To achieve these goals, the manufacture method of electroluminescence device of the present invention, it comprises at least:
On substrate, form the step of the second plate of first anode light transmission, first thickness and second thickness;
On each of described anode, be laminated to the step of the functional layer that comprises luminescent layer less; With
The step of stacked negative electrode on described functional layer,
The step that forms described anode comprises:
In the formation zone of the described first anode, form the first step of first nesa coating that deducts the thickness of described second thickness (b) from described first thickness (g);
In the formation zone of the described first anode and regional second step that forms second nesa coating of described second thickness (b) of formation of described second plate.
The present invention can be than the anode of the blooming that is easier to realize being suitable for most optical resonance of all kinds (optical length, optical distance) for example in the electroluminescence device with the primary colors of 2 looks (green and blue) apparent color.
Here, form the anode that the zone forms the first thickness d r in the pixel of redness, form the situation of the anode of the zone formation second thickness d g in the pixel of green in explanation.At first, in first step, form the anode of the thickness of zone formation dr-dg in the pixel of redness.Then in second step, form the anode of the stacked second thickness d g in zone in the pixel of redness, the pixel in green forms the anode that the zone forms the second thickness d g simultaneously.Form the anode that the zone just forms the thickness of (dr-dg+dg)=dr in the pixel of redness like this, form the anode that the zone just forms thickness d g in the pixel of green.
At this moment, can make the first thickness d r is about 2 times of the second thickness d g, and can make the anode thickness that forms in each step is same degree.Therefore, according to the present invention, in the first step and second step, can make etching period be close to same degree.Therefore, increase, avoid the generation of side that long etching causes etc. on one side, step is managed become easy on one side the present invention can suppress the number of times of lithography step.In addition, so-called pixel of the present invention, the illuminating part (light-emitting zone) of expression light-emitting component and formation light-emitting component is the luminous set of pixels cooperation of the luminous or same color that carries out different colours a pixel group.
To achieve these goals, the manufacture method of electroluminescence device of the present invention, it comprises at least:
The step of the third anode of the second plate of formation first anode light transmission, first thickness, second thickness and the 3rd thickness on substrate;
On each of described anode, be laminated to the step of the functional layer that comprises luminescent layer less; With
The step of stacked negative electrode on described functional layer,
The step that forms described anode comprises:
Form the first step of first nesa coating that deducts the thickness of described second thickness from described first thickness in the formation of described first anode zone;
Deduct second step of second nesa coating of the thickness of the 3rd thickness from described second thickness in the formation zone formation of the formation of described first anode zone and described second plate;
Form the third step of the 3rd nesa coating of described the 3rd thickness in the formation zone of the formation zone of the formation zone of the described first anode, described second plate, described third anode.
The present invention can be than the anode that is easier to realize be suitable for most the blooming of optical resonance of all kinds for example in the electroluminescence device with the primary colors of 3 looks (red, green, blueness) apparent color.
Here, illustrate that the pixel in redness forms the anode that the zone forms the first thickness d r, form the anode that the zone forms the second thickness d g, form the situation that the zone forms the anode of the 3rd thickness d b in blue pixels in the pixel of green.At first, in first step, form the anode of the thickness of zone formation dr-dg in the pixel of redness.Then in second step, form the anode of the thickness of regional stacked dg-db in the pixel of redness, form the anode that the zone forms the thickness of dg-db in the pixel of green.Then in third step, form the anode of stacked the 3rd thickness d b in zone in the pixel of redness, form the anode of stacked the 3rd thickness d b in zone in the pixel of green, form the anode of stacked the 3rd thickness d b in zone in blue pixels.
Like this, the pixel in redness forms the anode that the zone just forms (dr-dg)+(dg-db)+db=dr thickness.Pixel in green forms the anode that the zone just forms (dg-db)+db=dg thickness.Form the anode that the zone just forms db thickness in blue pixels.
In view of the above, can make the anode thickness that forms in each step is same degree.Therefore, according to the present invention, in first～third step, can make etching period near same degree.Therefore, increase, avoid the generation of side that long etching causes etc. on one side, step is managed become easy on one side the present invention can suppress the number of times of lithography step.
In addition, in the manufacture method of electroluminescence device of the present invention, preferably form a plurality of pixels and form the zone on described substrate, wherein this pixel forms the pixel that pixel that pixel that the zone comprises first look at least forms zone, second look with described first look different forms zone, three look with described first look and described second look different and forms the zone; Form in described a plurality of pixels on each of zone and stacked described first, second and third anode, described light emitting functional layer and described negative electrode are set and the light-emitting component that constitutes respectively; Described light-emitting component is the electroluminescent cell that forms the optical resonator with reflector between described anode and described substrate, described first look is red, described second look is green, and the 3rd look is blue, uses lithography step to carry out described first step～third step.
According to the present invention, to observing, in the manufacture method of the electroluminescence device of the top emission structure of opposite side ejaculation light, increase on one side can suppress the number of times of lithography step with substrate from luminescent layer, avoid on one side the generation of side that long etching causes etc., can make the step management become easy.
To achieve these goals, electroluminescence device of the present invention comprises at least:
On substrate, form first anode light transmission, first thickness, the second plate of second thickness and the third anode of the 3rd thickness;
Be layered on each of described anode and comprise the functional layer of luminescent layer at least; With
Be layered in the negative electrode on the described functional layer, in the formation zone of the described first anode, by stackedly from described first thickness, deducting first nesa coating of the thickness of described second thickness, from described second thickness, deduct second nesa coating of the thickness of described the 3rd thickness, the 3rd nesa coating of described the 3rd thickness, thereby form the described first anode; In the formation zone of described second plate,, thereby form described second plate by stacked described second nesa coating and described the 3rd nesa coating; In the formation zone of described third anode, form described third anode by described the 3rd nesa coating.
According to the present invention, can provide as low cost and the high product of reliability having the electroluminescence device that forms the different anode of thickness each other that the zone forms respectively in a plurality of pixels.Here, the physical characteristic at stacked anode interface each other is different with the physical characteristic of outer surface part in addition in each step.Therefore, the anode that forms with a plurality of steps has different respectively structures with the anode that forms with single stage, so can the specific anode that is formed by a plurality of steps.
In addition, in electroluminescence device of the present invention, by the direction outgoing of light edge from described substrate towards described luminescent layer of described luminescent layer generation.In other words, the light that is produced by described luminescent layer is to observing an opposite side outgoing with described substrate from described luminescent layer.
According to the present invention, can provide the electroluminescence device of top emission structure as low cost and the high product of reliability.
In addition; in electroluminescence device of the present invention; the light-emitting component that is made of described first, second and third anode, described light emitting functional layer and described negative electrode has the optical resonator that the reflector is set between described anode and described substrate, be formed with the insulating protective layer of the light transmission that covers described reflector between described anode and described reflector.
In manufacture method in the past, when a plurality of pixels have the different anode of thickness each other respectively, when forming such anode, be necessary to carry out etching step repeatedly.
With respect to this; electroluminescence device of the present invention forms the insulating protective layer of the light transmission that covers described lower layer side reflector between anode and lower floor's one lateral reflection layer; so after forming the lower layer side reflector; even when forming anode, carry out etching step repeatedly, also can avoid making the situation of lower floor's one lateral reflection layer deterioration owing to this etching.
In addition, in electroluminescence device of the present invention, any one in the group that described lower layer side reflector is made of aluminium, aluminium alloy, silver, silver alloy constitutes.
Etching solution, etching gas or stripper when the metal level of aluminium, aluminium alloy, silver, silver alloy etc. forms owing to anode, deterioration easily.According to the present invention, cover the lower layer side reflector by insulating protective layer, so can avoid making the situation of lower layer side reflector deterioration owing to described etching solution.In addition, the present invention uses with aluminium or silver-colored metal as principal component the lower layer side reflector, can improve the reflectivity in the lower layer side reflector, can provide light to take out the high electroluminescence device of efficient.
In addition, in the electroluminescence device of the present invention, the refractive index of the described anode of refractive index ratio of described insulating protective layer is also little.
If between lower layer side reflector and anode, form insulating protective layer, then comprise the optical distance (thickness * refractive index) of this insulating protective layer in the optical distance of optical resonator.Here, according to the of all kinds decision optical resonator desired optical distance corresponding with pixel.
Therefore,, just must make the anode attenuation, be difficult to form too thin anode, and the thickness and precision of anode descend with high accuracy if the refractive index of insulating protective layer is big.And in the present invention, the refractive index of insulating protective layer is little, thus can make the anode thickening, about thickness, can the high anode of easy formation precision.From such viewpoint, insulating protective layer is SiN, SnO preferably
2Or acrylic resin.
In addition, in electroluminescence device of the present invention, the corresponding thickness of any wavelength in the optical distance that the preferred described first anode, described second plate, described third anode are set to described optical resonator and ruddiness, green glow, the blue light.In other words, described anode is set to: according to each pixel with the optical distance of described optical resonator be made as with ruddiness, green glow, blue light in the thickness of any one corresponding length.
According to the present invention, can the electroluminescence device that the colour that with red, green and blueness is primary colors shows be provided as low cost and the high product of reliability.
To achieve these goals, electroluminescence device of the present invention is formed on a plurality of pixels on the substrate and has light emitting functional layer by first electrode and the second electrode clamping respectively; Described a plurality of pixel comprises first pixel, second pixel, the 3rd pixel at least; First electrode of described first pixel is made of the stepped construction of the second low conducting film of high first conducting film of etching selectivity and etching selectivity; First electrode of described second pixel is made of described first conducting film; First electrode of described the 3rd pixel is made of described second conducting film.
Here, be illustrated with regard to etching selectivity.
A plurality of conducting film of the present invention is according to the kind of its material, the structure of material (crystalline state or non-crystal state), has the different character of etching speed to the reactant gas of the soup of wet etching or dry ecthing.
For example for the soup of regulation or the reactant gas of regulation, one of a plurality of conducting films has with the etched character of high speed (etching speed) sometimes, and other conducting films have etched hardly character.
So in the present invention, for the regulation soup and the reactant gas of regulation, the easy degree of a plurality of conducting films etching separately as etching selectivity.And, utilize same soup and reactant gas, during a plurality of conducting film of etching, etched conducting film is " etching selectivity is high " in same step, etched hardly conducting film is " etching selectivity is low ".
In the past when forming different a plurality of first electrode of thickness each other, carry out forming step and etching step with the Etching mask of the quantity same number of a plurality of first electrodes.Therefore, in etching step,, be necessary to cover first electrode of non-etch target by Etching mask in order to prevent that first electrode of formation is etched earlier.
Relative therewith, the present invention utilizes the difference of the etching selectivity of a plurality of conducting films, forms first electrode, so for the low conducting film of etching selectivity (first conducting film), do not cover Etching mask, just can be the high conducting film of etching selectivity (second conducting film) etching.
Therefore, according to the present invention, in other words the step that forms Etching mask, realizes the reduction of step of exposure number and the reduction of mask number than reduced in the past, so can realize the electroluminescence device that manufacturing cost reduces.
In addition, each of first electrode of a plurality of pixels of pixel group is formed by the side's conducting film in the low conducting film of the high conducting film of etching selectivity and etching selectivity, or by etching selectivity high conducting film and low stacked formation of conducting film of etching selectivity, so a plurality of first electrode is made of the single layer structure of conducting film or the stepped construction of a plurality of conducting films respectively.
In addition, in electroluminescence device of the present invention, described first conducting film and described second conducting film be nesa coating preferably.
In addition, in electroluminescence device of the present invention, the thickness of preferred described first conducting film is different with the thickness of described second conducting film.That is a plurality of first electrodes thickness difference each other.
Therefore, a plurality of first electrodes are the thickness difference each other, and has the transparency, can work as optical resonator, can make the optical length difference (adjustment) of optical resonator according to each pixel.
For example in the pixel of the long ruddiness of visible light medium wavelength (wavelength more than about 600nm),, can make first electrode consistent with the pairing length of the wavelength of ruddiness to the optical length of second electrode by increasing the thickness of (adjustment) first electrode.
In addition, in the pixel of the blue light (wavelength of about 400nm～490nm) that the visible light medium wavelength is relatively lacked,, can make first electrode consistent with the pairing length of the wavelength of blue light to the optical length of second electrode by reducing the thickness of (adjustment) first electrode.
In addition, penetrate in the pixel of green glow (wavelength of about 490～570nm) of middle wavelength of ruddiness and blue light, by adjusting the thickness of first electrode, thereby can make first electrode consistent with the pairing length of the wavelength of green glow to the optical length of second electrode.
In addition, in order to increase optical length, a plurality of conducting films of stacked formation, and in order to reduce optical length form conducting film in a plurality of conducting films with individual layer, thereby can adjust optical length.In addition, when forming conducting film, consider desired optical length, select the monofilm of thick film or film, thereby can adjust optical length with individual layer.In addition, consider desired optical length, when forming each thickness of a plurality of conducting films,, can adjust optical length by making film thickening or attenuation.
By the optical length of a plurality of pixels of such adjustment first electrode separately, can realize the electroluminescence device that display performance is high.Particularly, the raising of NTSC ratio, the optimization of white balance, the netrual colourization that white shows can be realized, the degree of freedom of colour planning can be improved.
In addition, in electroluminescence device of the present invention, first electrode of preferred described first pixel is made of described first conducting film, second conducting film that is layered on described first conducting film.
If like this, just can obtain the effect same with described electroluminescence device.
In addition, in electroluminescence device of the present invention, preferably between described substrate and described first electrode, form reflectance coating.
If like this, just can make the luminous light reflection of light emitting functional layer by reflectance coating, can make luminous light to the one side outgoing of second electrode.
In addition, in the present invention, the luminous light of light emitting functional layer comprises and does not reflect and from the light (non-reverberation) of second electrode, one side outgoing, by the light (reverberation) of reflectance coating reflection back from the one side outgoing of second electrode.Light by the reflectance coating reflection is compared with non-reverberation, and optical length grows the part by the conducting film of first electrode.Therefore, because reverberation and non-catoptrical balance are necessary to adjust optical length.At this moment, the present invention adjusts optical length by the single layer structure or the stepped construction of a plurality of conducting films, so even reverberation and non-reverberation mix when existing, also can easily adjust optical length.
In addition, in electroluminescence device of the present invention, the color of the preferred described first pixel outgoing, the color of the described second pixel outgoing, the color of described the 3rd pixel outgoing have nothing in common with each other.In other words, preferred described a plurality of pixels penetrate the color that differs from one another.From the color of each light of a plurality of pixel outgoing are primary colors of R (red), G (green), B (indigo plant).In addition, be not limited thereto, also comprise C (blue-green), M (carmetta), Y complementary colours such as (yellow) at least any.
If like this, just can carry out colour and show by each pixel group, when having a plurality of pixel group, (for example be arranged as rectangular), can show full-color image.
In addition, in electroluminescence device of the present invention, the light wavelength that the light wavelength that the light emitting functional layer of the light wavelength that the light emitting functional layer of described first pixel is sent, described second pixel is sent, the light emitting functional layer of described the 3rd pixel are sent has nothing in common with each other.In other words, in described a plurality of pixels, the luminous light of the color wavelength that described light emitting functional layer outgoing is different.
If like this, just can in each of light emitting functional layer, produce the luminous light of different colors, so can press the different color of each pixel outgoing, can obtain and the same effect of electroluminescence device before.
In addition, in electroluminescence device of the present invention, each of described a plurality of pixels comprises the dyed layer of relative configuration with described light emitting functional layer, and the color of the color of the dyed layer of the color of the dyed layer of described first pixel, described second pixel, the dyed layer of described the 3rd pixel has nothing in common with each other.In other words, in each of described a plurality of pixels, the dyed layer with a plurality of colors of relative configuration with described light emitting functional layer.
Here, the dyed layer of a plurality of colors is dyed layers of all kinds of RGB.
And, the luminous only single light time of white of each light emitting functional layer outgoing of a plurality of pixels, the white light that produces in the light emitting functional layer sees through dyed layer, and dyed layer is for white light, be colored as RGB (each color wavelength of pressing RGB sees through), so can press the different color of each pixel outgoing.In addition, can obtain and before the same effect of electroluminescence device.
In addition, when the luminous light of each light emitting functional layer outgoing of a plurality of pixels for example was each color of RGB, each color of light of the RGB that produces in light emitting functional layer saw through the same color dyed layer, thereby can improve from the colour purity of the light of dyed layer outgoing.In addition, can obtain and before the same effect of electroluminescence device.
To achieve these goals, the manufacture method of electroluminescence device of the present invention, each that is formed at a plurality of pixels on the substrate has the light emitting functional layer by first electrode and the second electrode clamping respectively; Described a plurality of pixel comprises first pixel, second pixel, the 3rd pixel at least; The step that forms described first electrode is by the step that forms etching selectivity second conducting film also lower than described first conducting film in the step that forms first conducting film on described first pixel and second pixel, on the described first and the 3rd pixel.
According to the present invention, utilize the difference of each etching selectivity of a plurality of conducting films to form first electrode, therefore for the high conducting film of etching selectivity (first conducting film), do not cover Etching mask, just can be the low conducting film etching of etching selectivity (second conducting film).
Therefore, in other words the step that forms Etching mask, realizes the reduction of step of exposure number and the reduction of mask number than reduced in the past, so can realize the electroluminescence device that manufacturing cost reduces.
In addition, by forming the step of a plurality of first electrodes, conducting film by the side in the low conducting film of etching selectivity is high in a plurality of conducting films conducting film and etching selectivity, form at least one described first electrode, the conducting film that conducting film that stacked etching selectivity is high and etching selectivity are low, form at least one described first electrode, so a plurality of first electrode is made of the single layer structure of conducting film, the stepped construction of a plurality of conducting films.
In addition, in the present invention, described first and second conducting films are nesa coatings, a plurality of described first electrodes thickness difference separately.
Therefore, form the thickness difference of a plurality of first electrodes that step forms by first electrode, and have the transparency, can work, can make the optical length difference (adjustment) of optical resonator by each pixel as optical resonator.
For example, in the pixel of the long ruddiness of visible light medium wavelength (wavelength more than about 600nm),, can make first electrode consistent with the pairing length of the wavelength of ruddiness to the optical length of second electrode by increasing the thickness of (adjustment) first electrode.
In addition, for example in the pixel of the blue light (wavelength of about 400nm～490nm) that the visible light medium wavelength is relatively lacked,, can make first electrode consistent with the pairing length of the wavelength of blue light to the optical length of second electrode by reducing the thickness of (adjustment) first electrode.
In addition, for example penetrate in the pixel of green glow (wavelength of about 490～570nm) of the middle wavelength of ruddiness and blue light,, can make first electrode consistent with the pairing length of the wavelength of green glow to the optical length of second electrode by adjusting the thickness of first electrode.
In addition, in order to increase optical length, a plurality of conducting films of stacked formation, and in order to reduce optical length form conducting film in a plurality of conducting films with individual layer, thereby can adjust optical length.In addition, when forming conducting film, consider desired optical length, select the monofilm of thick film or film, thereby can adjust optical length with individual layer.In addition, consider desired optical length, when forming each thickness of a plurality of conducting films,, can adjust optical length by making film thickening or attenuation.
By the optical length of a plurality of pixels of such adjustment first electrode separately, can realize the electroluminescence device that display performance is high.Particularly, the raising of NTSC ratio, the optimization of white balance, the netrual colourization that white shows can be realized, the degree of freedom of colour planning can be improved.
In addition, in the manufacture method of electroluminescence device of the present invention, the step that forms described first electrode comprises: first patterning step of carrying out patterning after forming first conducting film on the described substrate; On by first conducting film of the described first patterning step patterning and described substrate, form described second conducting film, described second conducting film is carried out second patterning step of patterning.
If like this, just can obtain and above-mentioned same effect.
To achieve these goals, electronic instrument of the present invention comprises above-mentioned electroluminescence device.
According to the present invention, can provide the electronic instrument that shows high-quality coloured image as low cost and the high product of reliability.
As such electronic instrument, can enumerate information processors such as mobile phone, personal digital assistant device, clock and watch, word processor, personal computer, printer etc.In addition, can enumerate the TV with large-scale display frame, large-scale monitor.Adopt electro-optical device of the present invention by display part, thereby the electronic instrument with the high display part of display performance can be provided electronic instrument.In addition, also can be applied to the light source of printer etc.
Description of drawings
Fig. 1 is the cutaway view of structure of the organic El device of expression first execution mode of the present invention.
Fig. 2 is the cutaway view of the anode formation method of this organic El device of expression.
Fig. 3 A～Fig. 3 C is a schematic cross sectional views of specifically representing this anode formation method.
Fig. 4 is the cutaway view of structure of the organic El device of expression second execution mode of the present invention.
Fig. 5 is the circuit diagram of electrical structure example of the organic El device of expression embodiment of the present invention.
Fig. 6 is the plane graph of wire structures of the organic El device of expression the 3rd execution mode of the present invention.
Fig. 7 is the plane graph of structure of schematically representing the organic El device of third embodiment of the invention.
Fig. 8 is the cutaway view of structure of schematically representing the organic El device of third embodiment of the invention.
Fig. 9 is the figure of light emitting functional layer that schematically represents the organic El device of third embodiment of the invention.
Figure 10 A～Figure 10 G is the figure of the manufacture method of explanation organic El device of the present invention.
Figure 11 is the cutaway view of structure of schematically representing the organic El device of fifth embodiment of the invention.
Figure 12 is the cutaway view of structure of schematically representing the organic El device of sixth embodiment of the invention.
Figure 13 is the figure that expression has the electronic instrument of organic El device of the present invention.
Embodiment
Following with reference to the description of drawings embodiments of the present invention.
It should be noted that present embodiment is represented a part of form of the present invention, does not limit the present invention, in technological thought scope of the present invention, can change arbitrarily.In each used figure of the following description, become the size that to discern degree in the accompanying drawings in order to make each layer and each member, so, make the engineer's scale difference according to each layer and each member.
[first execution mode]
(basic structure of EL device)
Fig. 1 is the cutaway view of structure of the organic El device (EL device) of pattern ground expression first embodiment of the invention.
In Fig. 1, the organic El device of present embodiment is to observe from luminescent layer 14, to the device of the top emission structure of a side outgoing display light opposite with substrate 11 sides.Organic El device 1 has pixel 100 (R), 100 (G), 100 (B).Pixel 100 (R) penetrates the luminous light of red (R), and pixel 100 (G) penetrates the luminous light of green (G), and pixel 100 (B) penetrates the luminous light of blue (B).Go up formation organic EL 10 at each pixel 100 (R), 100 (G), 100 (B).
On each of described pixel 100 (R), 100 (G), 100 (B), form the organic EL 10 that constitutes by anode 12, hole transporting layer 13, luminescent layer 14, electron supplying layer 15, cathode layer 16 respectively; and form reflector 19 and the insulating protective layer 18 describe later, constitute pixel as a unit by organic EL 10, reflector 19 and insulating protective layer 18.
Here, the anode 12 that is formed at pixel 100 (R) is equivalent to the first anode, and the anode 12 that is formed at pixel 100 (G) is equivalent to second plate, and the anode 12 that is formed at pixel 100 (B) is equivalent to third anode.
In addition, between substrate 11 and anode 12, form the reflector 19 (total reflection layer) that constitutes by aluminium, aluminium alloy, silver or silver alloy.
And, between lower layer side reflector that constitutes by reflector 19 and the upper layer side reflector that constitutes by cathode layer 16, constitute optical resonator 40.
Here, hole transporting layer 13 that uses in the organic EL 10 and luminescent layer 14 all are to be made of identical materials in pixel 100 (R), 100 (G), 100 (B) arbitrarily.Organic EL 10 produces white light in inside.
, in the present embodiment, the thickness of anode 12 is different in pixel 100 (R), 100 (G), 100 (B), and the thickness of anode 12 is pixel 100 (B)＜pixel 100 (G)＜pixel 100 (R).For example the thickness of anode 12 is set at following value in each pixel 100 (R), 100 (G), 100 (B).
Thickness=the 30nm of the anode 12 of pixel 100 (B)
Thickness=the 65nm of the anode 12 of pixel 100 (G)
Thickness=the 95nm of the anode 12 of pixel 100 (R)
Therefore, the optical length (optical distance) of the optical resonator 40 of each pixel 100 (R), 100 (G), 100 (B) is different in each pixel 100 (R), 100 (G), 100 (B).In other words, the thickness of anode 12 is adjusted into the optical length of optical resonator from the color of light of each pixel 100 (R), 100 (G), 100 (B) outgoing regulation.In addition, the refractive index that for example forms the ITO of anode 12 is 1.95.
In the organic EL 10 that constitutes like this, if electric current flows to cathode layer 16 from anode 12 by hole transporting layer 13, luminescent layer 14, then according at this moment the magnitude of current, luminescent layer 14 is luminous.And the light transmission cathode layer 16 that luminescent layer 14 penetrates is to observer's one side outgoing, and from luminescent layer 14 to reflector 19 reflections of the light of substrate 11 outgoing by the lower floor that is formed at anode 12, see through cathode layer 16, to observer's one side outgoing.At this moment, penetrated by multiple returning between the lower layer side reflector (reflector 19) of optical resonator 40 and upper layer side reflector (cathode layer 16) from the light of luminescent layer 14 outgoing, the colourity of light that can make the optical length of optical resonator 40 be equivalent to the integral multiple of 1/4 wavelength improves.Therefore, white light takes place in organic EL 10 in inside, still with red (R) corresponding pixel 100 (R) outgoing ruddiness, with green (G) corresponding pixel 100 (G) outgoing green glow, with blue (B) corresponding pixel 100 (B) outgoing blue light.
(formation of insulating protective layer)
In addition, in the present embodiment, between the layer of reflector 19 and anode 12, be formed with the insulating protective layer 18 of light transmission in the mode of the surface that covers reflector 19 and side.As insulating protective layer 18, for example enumerate the silicon nitride film (SiN) of the about 50nm of thickness, refractive index 1.8.
(manufacture method)
When making the organic El device 1 of such structure, at first on the surface of substrate 11, have the metal film (aluminium, aluminium alloy, silver or silver alloy) of light reflective by formation such as sputtering method or vacuum vapour depositions after, use photoetching technique to carry out patterning, form reflector 19.
Then, 19 surface one side in the reflector forms the insulating protective layer 18 that is made of silicon nitride film by the CVD method.
Then, form the ITO film of specific thickness with sputtering method,, use photoetching technique to form Etching mask, carry out etching on the upper strata of ITO film in the face side of insulating protective layer 18.But in the present embodiment, the thickness of anode 12 is different in each pixel 100 (R), 100 (G), 100 (B), so repeat such step 3 times.In view of the above, form anode 12.The formation method of anode 12 is one of features of the present invention, and the back describes in detail.
Then, utilize the drop ejection method that is also referred to as ink-jet method to form hole transporting layer 13, luminescent layer 14 successively.Drop ejection method be from droplet jetting head the fraction of the material that constitutes hole transporting layer 13 or luminescent layer 14 as the drop ejection after, make its drying, as the fixing method of hole transporting layer 13 or luminescent layer 14.At this moment, around pixel 100 (R), 100 (G), 100 (B), form the next door (not shown) that is called cofferdam (bank), wish that the drop or the fraction of ejection do not overflowed towards periphery.
When adopting such method,, wish to use poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid (PEDOT/PSS) as the polyolefin derivative thing as the hole-injecting material of hole transporting layer 13.And, after the ejection of regulation zone,, can form hole transporting layer 13 to the dispersion liquid that disperses as main solvent with the organic solvent of hole-injecting material by drying.In addition, the material as hole transporting layer 13 is not limited to above-mentioned material, can use polymer precursor be polyphenylene vinylene, 1, the 1-of poly-tetrahydrochysene thiophenyl phenylene two-(4-N, N-xylyl aminobenzene) cyclohexane etc.
In addition, as the material that forms luminescent layer 14, use macromolecular material, for example molecular weight is the macromolecular material more than 1000.Particularly, use poly-fluorene derivative, polyphenylene derivative, polyvinylcarbazole, polythiofuran derivative, or use in these macromolecular materials for example material of rubrene, perylene, 9,10-diphenylanthrancene, tetraphenylbutadiene, Nile red, coumarin 6, quinoline a word used for translation ketone etc. of doping perylene kinds pigment, Coumarins pigment, rhodamine class pigment.And as such macromolecular material, being fit to use pi-electron the pi-conjugated of delocalization on the polymer top of two keys is macromolecular material.Like this pi-conjugated is macromolecular material because be electroconductive polymer, so the luminescent properties excellence.Particularly, be more suitable for using the promptly poly-fluorene compound of the compound that in its molecule, has fluorene skeleton.In addition, beyond such material, for example special open the organic EL shown in the flat 11-40358 communique with constituent promptly comprise the precursor of conjugated system macromolecular organic compound, organic EL of being used to make at least a kind of fluorchrome that the characteristics of luminescence changes also can be used as luminescent layer with constituent and forms material and use.
After forming hole transporting layer 13 and luminescent layer 14 like this, form electron supplying layer 15, cathode layer 16 successively.
(the formation method of anode)
Then, specify the formation method of anode 12.
Fig. 2 is the schematic cross sectional views of formation method of the anode 12 of expression organic El device 1 shown in Figure 1.Fig. 3 is the schematic cross sectional views of concrete example of the formation method of expression anode 12.
At first, as described in above-mentioned manufacture method, form reflector 19 on the surface of substrate 11.Then form insulating protective layer 18 in the mode that covers the integral body of exposing in reflector 19.Carry out the formation step of the thickness shown in Fig. 2, Fig. 3 A, Fig. 3 B, Fig. 3 C then by the different anode 12 of each pixel on the upper strata of insulating protective layer 18.
These anodes 12 form by 3 times lithography step shown in Fig. 3 A, Fig. 3 B, Fig. 3 C.In addition, as shown in Figure 2, in the pixel 100 (R) of red (R), anode 12 becomes the three-decker of ITO film 121 (first nesa coating), ITO film 122 (second nesa coating) and ITO film 123 (the 3rd nesa coating).In the pixel 100 (G) of green (G), anode 12 becomes the two-layer structure of ITO film 122 (second nesa coating) and ITO film 123 (the 3rd nesa coating).In the pixel 100 (B) of blue (B), anode 12 becomes 1 layer of structure of ITO film 123.
For example the thickness dr of the anode 12 of pixel 100 (R) is 95nm, and the thickness dg of the anode 12 of pixel 100 (G) is 65nm, and the thickness db of the anode 12 of pixel 100 (B) is 30nm.
And, in the primary lithography step (first step) shown in Fig. 3 A, form the ITO film 121 of thickness (the about 30nm of dr-dg=) in the formation zone of pixel 100 (R).
Then, in the secondary lithography step shown in Fig. 3 B (second step),, form the ITO film 122 of thickness (the about 35nm of dg-db=) at the formation zone of the formation region R of pixel 100 (R) and pixel 100 (G) G.
Then, in the lithography step for the third time (third step) shown in Fig. 3 C,, form thickness (db: ITO film 123 about 30nm) in the formation region R of pixel 100 (R), the formation zone G of pixel 100 (G) and the formation area B of pixel 100 (B).
In view of the above, in the formation region R of pixel 100 (R),, form the anode 12 of thickness dr (95nm) according to (r-g)+(g-b)+b=r.In addition, at the formation zone of pixel 100 (G) G,, form the anode 12 of thickness dg (65nm) according to (g-b)+b=g.In addition, the formation area B of pixel 100 (B), the anode 12 of formation thickness db (30nm).Therefore, according to present embodiment, can be than the anode 12 that is easier to realize be suitable for most the blooming of the optical resonance corresponding with the illuminant colour of each pixel.
The following describes concrete processing example about described 3 times lithography step.At first, form the SiN layer of 50nm on the upper strata of insulating protective layer 18.Carry out first step then.
(first step)
On the upper strata of described SiN layer, form the ITO film of thickness 30nm with sputtering method.Then, only resist is carried out patterning in the pixel formation region R of pixel 100 (R) by carrying out resist coating, resist precuring (precure), mask exposure, resist development.Then, peel off, only the ITO film 121 of thickness 30nm is carried out patterning in the formation region R of pixel 100 (R) by carrying out resist curing, ITO etching, resist.
(second step)
Form the ITO film of thickness 35nm with sputtering method.Then,, only form regional G, resist is carried out patterning in the pixel formation region R of pixel 100 (R) and the pixel of pixel 100 (G) by carrying out resist coating, resist precuring, mask exposure, resist development.Then, peel off, only form regional G, the ITO film 122 of thickness 35nm is carried out patterning (Fig. 3 B) in the formation region R of pixel 100 (R) and the pixel of pixel 100 (G) by carrying out resist curing, ITO etching, resist.That is, form the ITO film that region R forms 30nm+35nm=65nm, form the ITO film that regional G forms 35nm in pixel in pixel.
(third step)
Form the ITO film of thickness 30nm with sputtering method.Then, by carrying out resist coating, resist precuring, mask exposure, resist development, form the pixel formation area B of regional G and pixel 100 (B) in the pixel formation region R of pixel 100 (R), the pixel of pixel 100 (G), resist is carried out patterning.Then, peel off by carrying out resist curing, ITO etching, resist, the pixel that forms regional G and pixel 100 (B) in the pixel of the formation region R of pixel 100 (R), pixel 100 (G) forms area B, and the ITO film 12 of thickness 30nm is carried out patterning (Fig. 3 C).That is, form the ITO film that region R forms 30nm+35nm+30nm=95nm, form the ITO film that regional G forms 35nm+30nm=65nm, form the ITO film that area B forms 30nm in pixel in pixel in pixel.In view of the above, the formation of anode 12 finishes.
In view of the above, according to present embodiment,,, can realize being suitable for most the blooming of optical resonance with comparalive ease at each red, green, blue pixel with 3 times lithography step.Not using the manufacture method of present embodiment and the stepped construction of ITO film, during the ITO electrode (anode 12) of different thickness, is impossible with 3 times lithography steps forming by pixel of all kinds.In addition, in the present embodiment, be divided into the anode 12 that 3 steps form the pixel formation region R of the thickest redness,, can make the step management become easy so can make the etching period of each step (first～third step) be the roughly approaching time.In addition, when increasing the thickness of the anode 12 that in step once, forms, because side takes place long-timeization of etching period easily.According to present embodiment, in the first step and second step, can wait and cut apart etch depth, can avoid the generation of side.
In addition, in the present embodiment, a plurality of pixels 100 are corresponding with red (R), green (G), blue (B) respectively, but the material of organic function layers such as the hole transporting layer 13 of formation organic EL 10 or luminescent layer 14 is irrelevant with corresponding color, be public, decide corresponding with which color according to the thickness of anode 12.Promptly in the present embodiment, in each pixel 100, constitute optical resonator 40, according to the thickness of anode 12, the optical length of optical resonator 40 be set at ruddiness, green glow, blue light in any one corresponding length.Therefore, no matter pixel 100 is corresponding with which color, the life-span of organic EL about equally, so can prolong the life-span of organic El device 1 integral body.In addition, when making organic El device 1, between pixel 100, use identical materials, so can improve productivity.
The different pixel of thickness that comprises anode 12 in a plurality of pixels 100 is so when forming such anode 12, carry out etching step repeatedly.
; in the present embodiment, between the layer in anode 12 and reflector 19, form the insulating protective layer 18 of the light transmission that covers reflector 19, so form after the reflector 19; no matter carry out etching step several times in order to form anode 12, reflector 19 can be owing to this etching deterioration.Particularly in the present embodiment, observe from luminescent layer 14, to a side outgoing opposite with substrate 11 by the light that luminescent layer 14 produces.At this moment, reflector 19 is required the reflectivity height, but according to present embodiment, reflector 19 is not because the etching when forming anode 12 and deterioration, so can constitute the high reflector of reflectivity 19.Therefore, present embodiment can provide light to take out the high organic El device of efficient.
Here, when improving the reflectivity in reflector 19, can use aluminium, aluminium alloy, silver or silver alloy to form reflector 19.Such metal level is because the etching solution that uses or etching gas and deterioration easily in the etching of ITO film, but according to present embodiment, reflector 19 is because the etching when forming anode 12 and deterioration, so can be with aluminium, aluminium alloy, silver or silver alloy formation reflector 19.
In addition, in the present embodiment, between reflector 19 and anode 12, there is insulating protective layer 18, so the optical length of insulating protective layer 18 (thickness * refractive index) is included in the optical length of optical resonator 40.At this moment; if the refractive index of insulating protective layer 18 is big, just according to the pairing every kind of color decision of pixel optical resonator 40 desired optical lengths, so if the refractive index of insulating protective layer 18 is big; just must make anode 12 attenuation, the thickness and precision of anode 12 descends.
, in the present embodiment, the refractive index (=1.95) of the refractive index ratio anode 12 of insulating protective layer 18 is little, and as such material, except SiN, hope is SiON (refractive index 1.7), SiO
2Or acrylic resin (for example refractive index 1.6).
In view of the above,, when the formation of the different anode 12 of thickness, do not make reflector 19 deteriorations, can make organic El device with high efficiency optical resonator according to pixel according to present embodiment.
In addition, in the present embodiment, illustrated with 3 primary colors and carried out the colored organic El device that shows, but the present invention also can be applied to carry out the colored organic El device that shows with 2 primary colors.For example, for having the green pixel 100 (G) and the organic El device of blue pixel 100 (B).And, use the step of Fig. 3 B and Fig. 3 C, form regional G in the pixel of pixel 100 (G) and form the anode 12 that constitutes by ITO film 122 and ITO film 123, form area B in the pixel of pixel 100 (B) and form the anode 12 that constitutes by ITO film 123.In view of the above, in the manufacturing step that carries out the colored organic El device that shows with 2 primary colors, can be with comparalive ease form according to pixel and the different anode of thickness with high accuracy.In addition, the present invention also can be applied to carry out the colored organic El device that shows with the primary colors more than 4.
[second execution mode]
Fig. 4 is the cutaway view of the structure of the organic El device (EL device) of schematically representing second embodiment of the invention.
The organic El device 1 and first execution mode shown in Figure 4 are same, are to observe from luminescent layer 14, to the device of the top emission structure of a side outgoing display light opposite with substrate 11 sides.In each of the pixel 100 (B) of the pixel 100 (G) of the pixel 100 (R) of outgoing redness (R), outgoing green (G), outgoing blueness (B), form organic EL 10 respectively.Organic EL 10 has in order the structure of the cathode layer with semi-transparent semi-reflecting property 16 that constitutes at the stacked transparent anode 12 that is made of ITO of the upper strata of the substrate 11 that is made of a glass side, hole transporting layer 13, luminescent layer 14, electron supplying layer 15, by magnesium-silver alloy.
In addition, between substrate 11 and anode 12, form the reflector 19 (total reflection layer) that constitutes by aluminium, aluminium alloy, silver or silver alloy, between lower layer side reflector that constitutes by reflector 19 and the upper layer side reflector that constitutes by cathode layer 16, constitute optical resonator 40.And then the hole transporting layer 13, the luminescent layer 14 that use in the organic EL 10 all are being made of identical materials among pixel 100 (R), 100 (G), 100 (B) arbitrarily, and organic EL 10 produces white light in inside.
, in the present embodiment, the thickness of anode 12 is different in pixel 100 (R), 100 (G), 100 (B), and the thickness of anode 12 is pixel 100 (B)＜pixel 100 (G)＜pixel 100 (R).
For example the thickness of anode 12 is set at following value in each pixel 100 (R), 100 (G), 100 (B).
Thickness=the 40nm of the anode 12 of pixel 100 (B)
Thickness=the 70nm of the anode 12 of pixel 100 (G)
Thickness=the 110nm of the anode 12 of pixel 100 (R)
The thickness that is anode 12 is adjusted into the optical length of optical resonator from the color of light of each pixel 100 (R), 100 (G), 100 (B) outgoing regulation.
In addition, anode 12 is that 1.95 ITO film constitutes by refractive index.
In addition, in the present embodiment, between the layer of reflector 19 and anode 12, form the insulating protective layer 18 of light transmission in the mode of the surface that covers reflector 19 and side.As insulating protective layer 18, in the present embodiment, be formed with the silicon oxide layer of the about 30nm of thickness, refractive index 1.5.
The manufacture method of the organic El device 1 of such structure can adopt and the same manufacture method of first execution mode.The formation method of anode 12 is wished with the formation method of the anode 12 of first execution mode same.
According to present embodiment, between the layer of reflector 19 and anode 12, form the insulating protective layer 18 of the light transmission that covers reflector 19.Therefore, can obtain: form after the reflector 19, form the etching step no matter anode 12 carries out several times, reflector 19 can be owing to this etching yet deterioration etc., with the same effect of first execution mode.That is,, when the formation of the different anode 12 of thickness, can not make reflector 19 deteriorations, can make organic El device with high efficiency optical resonator according to pixel according to present embodiment.In addition, according to present embodiment, the refractive index of insulating protective layer 18 (1.5) is littler than the refractive index (1.8) of the insulating protective layer 18 of first execution mode, thus can make Film Thickness Ratio first execution mode of anode 12 thick, can this anode 12 of easier manufacturing.
In the present embodiment, upper layer side at cathode layer 16, with the corresponding respectively position of pixel 100 (R), 100 (G), 100 (B) on, the transparency carrier 20 of colour filter 21 (B) that forms the colour filter 21 (G) of the colour filter 21 (R) of red (R), green (G), blue (B) is by transparent adhesive layer 30 joints of epoxies.Therefore,, compare, can enlarge the color reproduction scope from each pixel 100 (R), 100 (G), the high light of 100 (B) outgoing colour purity with first execution mode according to present embodiment.
[other execution modes]
In said embodiment, be that example describes with top emission structure to a side outgoing display light opposite with substrate 11 sides, but for also using the present invention to the bottom emissive type of substrate one side outgoing display light.Promptly when bottom emissive type; form the lower layer side reflector of semi-transparent semi-reflecting property in lower floor's one side of anode; if but between the lower layer side reflector of anode and semi-transparent semi-reflecting property, form insulating protective film, when then etching forms anode, can prevent lower layer side reflector deterioration.
In addition, in the above-described embodiment, 3 layers of hole transporting layer 13, luminescent layer 14, electron supplying layers 15 etc. are arranged between anode 12 and cathode layer 16, but also can take between anode 12 and cathode layer 16 further to add the structure of multilayer (for example the luminescent layer of electron injecting layer, hole injection layer, the second layer etc.).In addition, they can be the macromolecule types, also can be low molecule types.
[to the application examples of display unit]
Using organic El device 1 of the present invention can use as passive matrix display unit or active matrix type display.In these display unit, can adopt electric structure shown in Figure 5.
Fig. 5 is the circuit diagram of electric structure of the active matrix type display of expression embodiment of the present invention.Many the data wires 64 that the direction that organic El device 1 shown in Figure 5 has multi-strip scanning line 63, intersect at the bearing of trend with scan line 63 is extended, with these data wires 64 many public supply lines 65 arranged side by side, with the pixel 100 (light-emitting zone) of the corresponding configuration in crosspoint of scan line 63 and data wire 64.Pixel 100 is configured to rectangular (array-like) in the pixel display area territory.
In addition, technical scope of the present invention is not limited to described execution mode, can carry out various changes in the scope that does not break away from aim of the present invention, concrete material of enumerating in the execution mode or layer structure etc. are an example only, can carry out suitable change.
For example, in the above-described embodiment, carry out colour with the pixel of 3 primary colors of RGB and show, but the present invention is not limited thereto, can carry out colour demonstration with the pixel of 4 primary colors or 5 primary colors.In addition, can carry out colour with 2 different pixels of glow color shows.When for example carrying out the colour demonstration, in the pixel of RGB, can add any one color pixel of sending in blue-green (cyaan), carmetta (magenta), the yellow with 4 primary colors.
In addition, in the above-described embodiment, at display unit of the present invention, enumerate the example that organic EL is constituted as pixel, but the present invention is not limited thereto, and display unit of the present invention can be used the various electrooptic elements beyond the organic EL to wait to constitute.In addition, display unit of the present invention can be applied to display unit lighting devices in addition such as electro-optical device.Here, lighting device is not the display unit of display image or information etc., but to the device of the light of irradiated body outgoing regulation.
In addition, display unit of the present invention (electroluminescence device) can be applied to various household electrical appliances guidance panel, various measuring instrument, have the monitor of operating portion etc.
[the 3rd execution mode]
The following describes the organic El device (EL device) of third embodiment of the invention.
Fig. 6 is the schematic diagram of wire structures of the organic El device of expression present embodiment, and among Fig. 6, symbol 1 is an organic El device.
Organic El device is to use thin-film transistor (Thin Film Transistor, below be called TFT) be used as the device of the active matrix mode of switch element, have by multi-strip scanning line 101 ..., in many signal line 102 of extending with the direction of each scan line 101 quadrature ..., with each holding wire 102 ... many the power lines 103 that extend arranged side by side ... the wire structures that constitutes is at scan line 101 ... with holding wire 102 ... each intersection point near form pixel X ...
If certainly according to technological thought of the present invention, might not be to use the active matrix of TFT, also can use and implement the present invention towards the substrate of simple matrix.
On holding wire 102, connect data line drive circuit 200 with shift register, level shifter, video line, analog switch.In addition, on scan line 101, connect scan line drive circuit 80a, 80b with shift register and level shifter.
The switch TFT (switch element) 112 that gate electrode is supplied with sweep signal by scan line 101 is set on each pixel X, the maintenance electric capacity 113 of the picture element signal that maintenance is shared with TFT112 and from holding wire 102 by switch, the driving TFT (switch element) 223 that offers gate electrode by the picture element signal that keeps electric capacity 113 to keep, the pixel electrode (first electrode) 23 that drive current flows into from power line 103 when being electrically connected with TFT223 and with power line 103 by driving, be clipped in the light emitting functional layer 110 between pixel electrode 23 and the negative electrode (second electrode) 50.
In addition, pixel electrode 23 is corresponding with the anode of first execution mode and execution mode 2.
The concrete form of the organic El device 1 of present embodiment then is described with reference to Fig. 7～Fig. 9.Here, Fig. 7 is a plane graph of schematically representing the structure of organic El device 1.Fig. 8 is a cutaway view of schematically representing the pixel group of organic El device 1.Fig. 9 is the schematic diagram of explanation light emitting functional layer.
The structure of organic El device 1 at first is described with reference to Fig. 7.
Fig. 7 is various wirings, TFT, pixel electrode, the various circuit of expression by forming on the substrate 120, makes the figure of the luminous organic El device 1 of light emitting functional layer 110.
As shown in Figure 7 and Figure 8, organic El device 1 constitutes and comprises: have electrical insulating property substrate 120, be connected switch with the pixel electrode on the TFT112 23 on substrate 120, be configured to the rectangular and pixel X that constitutes, be configured in pixel X around and be connected power line 103 on each pixel electrode ..., be arranged in the pixel portions 3 (the single-point line frame of Fig. 7) that vertical view on the pixel X is almost rectangle at least.
In addition, in the present embodiment, pixel portions 3 be divided into middle body actual displayed zone 4 (the double dot dash line frame among the figure in), be configured in actual displayed zone 4 around nominal region 5 (zone between single-point line and the double dot dash line).
In actual displayed zone 4, dispose regularly at the paper left and right directions with emitting red light (R), green emitting (G), luminous red pixel XR (first pixel), green pixel XG (second pixel), the blue pixel XB (the 3rd pixel) of blue-light-emitting (B) respectively.In addition, each of each color pixel XR, XG, XB vertically with same color alignment (array-like), constitutes so-called striped configuration at paper.In addition, each color pixel XR, XG, XB have and are accompanied by described TFT112,223 action, with the of all kinds luminous light emitting functional layer 110 of RGB.And each color pixel XR, XG, XB become a set, constitute pixel group Px (back description), and pixel group Px makes the luminous blend color of RGB, carry out full color and show.Therefore, in the actual displayed zone 4 that constitutes, show the image of full color pixel group Px being configured to rectangular.
In addition, both sides dispose scan line drive circuit 80a, 80b in the Fig. 7 in actual displayed zone 4.This scan line drive circuit 80a, 80b are positioned at lower floor's one side of nominal region 5.
In addition, in the Fig. 7 in actual displayed zone 4 above a side configuration inspection circuit 90, check circuit 90 is arranged at lower floor's one side of nominal region 5.Check circuit 90 is the circuit that are used to check the working condition of organic El device 1, for example have inspection message output block (not shown), constitute and to make in the way or quality, the defect inspection of the organic El device when dispatching from the factory outside outgoing inspection result.
The driving voltage of scan line drive circuit 80a, 80b and check circuit 90 is to be applied in by driving voltage conducting portion (not shown) from the power supply unit of stipulating.In addition, the drive control signal of scan line drive circuit 80a, 80b and check circuit 90 and driving voltage are sent out and apply by drive control signal conducting portion (not shown) and driving voltage conducting portion (not shown) from the regulation master driver of the work control of being responsible for organic El device 1 etc.It should be noted that drive control signal at this moment is the related command signal from master driver etc. of control during with scan line drive circuit 80a, 80b and check circuit 90 output signals.
The structure of the pixel group of organic El device 1 is described below with reference to Fig. 8.
It should be noted that, in Fig. 8, describe the structure of pixel electrode 23, light emitting functional layer 110, negative electrode 50 in detail, be connected with on the pixel electrode 23 to drive and use TFT223.
As shown in Figure 8, the pixel group Px of organic El device 1 has the light emitting functional layer 110 by pixel electrode 23 and negative electrode 50 clampings on substrate 120.In addition, each electrode 23,50 and light emitting functional layer 110 be configured in substrate 120 and with the counter substrate 130 of substrate 120 relative configurations between.Be the space of having filled inert gases such as nitrogen between the substrate 120,130, keep drying regime by not shown drier or getter (getter).
In addition, light emitting functional layer 110 has different luminescent materials at each of red pixel XR, green pixel XG, blue pixel XB, sends each coloured light of RGB.Also have luminous light transmission substrate 120 outgoing.Therefore, the organic El device 1 of present embodiment constitutes bottom emissive type.
If specify, then pixel electrode 23R is made of the crystallization ITO film (first conducting film) 211 that is formed on substrate 120 1 sides, the noncrystal ITO film (second conducting film) 212 that is layered on the crystallization ITO film 211.In addition, the thickness of pixel electrode 23R adds up to 110nm, is the thickness that the thickness 40nm of crystallization ITO film 211 adds the thickness 70nm of noncrystal ITO film 212.
In addition, pixel electrode 23G is formed by the individual layer of noncrystal ITO film 212, and thickness is 70nm.
In addition, pixel electrode 23B is formed by the individual layer of noncrystal ITO film 211, and thickness is 40nm.
Therefore, if the thickness of compared pixels electrode 23R, 23G, 23B just becomes pixel electrode 23R〉pixel electrode 23G〉pixel electrode 23B.
In addition, crystallization ITO film 211 and noncrystal ITO film 212 are the conducting films that form by sputtering method, and its refractive index all is about 1.9.In addition, in sputtering method, only suitably adjust sputtering condition, just can under crystalline state or non-crystal state, form the ITO film.
In addition, pixel electrode 23R, 23G, 23B as mentioned above, thickness difference, and have the transparency is so can work as optical resonator.That is, the optical length that can make optical resonator is by each pixel electrode 23R, 23G, 23B and difference (adjustment).
For example in the pixel XR of the long ruddiness of outgoing visible light medium wavelength (wavelength more than about 600nm), by increasing the thickness of (adjustment) pixel electrode 23R, can make pixel electrode 23R consistent with the pairing length of the wavelength of ruddiness to the optical length of negative electrode 50.
In addition, in the pixel XB of the blue light (wavelength of about 400nm～490nm) that outgoing visible light medium wavelength is relatively lacked, by reducing the thickness of (adjustment) pixel electrode 23B, can make pixel electrode 23B consistent with the pairing length of the wavelength of blue light to the optical length of negative electrode 50.
In addition, among the pixel XG of the green glow (wavelength of about 490～570nm) of the middle wavelength of ejaculation ruddiness and blue light,, can make pixel electrode 23G consistent with the pairing length of the wavelength of green glow to the optical length of negative electrode 50 by adjusting the thickness of pixel electrode 23G.
In addition, when increasing optical length, adjust optical length, and when reducing optical length, adjust optical length with the conducting film that individual layer forms in a plurality of conducting films by a plurality of conducting films of stacked formation.In addition, when forming conducting film, consider desired optical length, select the monofilm of thick film or film, thereby can adjust optical length with individual layer.Have again, when considering that desired optical length forms each thickness of a plurality of conducting films, by making film thickening or attenuation, thereby can adjust optical length.
It should be noted that, in the present embodiment, each thickness of pixel electrode 23R, 23G, 23B is made as 110nm, 70nm, 40nm, but can be 90nm, 60nm, 30nm.
The following describes the character of crystallization ITO film 211 and noncrystal ITO film 212.
As described in as characteristics of the present invention, crystallization ITO film 211 and noncrystal ITO film 212 are conducting films that etching selectivity differs from one another.In wet etch step, noncrystal ITO film 212 has by the etched character of the soup of oxalic acid class, but for same soup, crystallization ITO film 211 has etched hardly character.Therefore, simultaneously when etching crystallization ITO film 211 and noncrystal ITO film 212, etching method for amorphous body ITO film 212 selectively by the oxalic acid soup, and etching crystallization ITO film 211 hardly.
Therefore, noncrystal ITO film 212 is than the etching selectivity height of crystallization ITO film 211.
In addition, when using chloroazotic acid as soup, crystallization ITO film 211 and noncrystal ITO film 212 all have etched character.
It should be noted that, in the present embodiment,, adopt noncrystal ITO film 212, but replace noncrystal ITO film 212, can adopt IZO (IndiumZinc Oxide) as the conducting film of pixel electrode 23R, 23G.At this moment, by the soup of oxalic acid class, etching IZO selectively.
As shown in Figure 9, the organic EL layer (light emitting functional layer) 60 that forms on hole injection layer (light emitting functional layer) 70 that forms on the stacked pixel electrode 23 and the hole injection layer constitutes light emitting functional layer 110.
Macromolecular material as hole injection layer 70, be fit to use dispersion liquid poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid (PEDOT/PSS), promptly in polystyrolsulfon acid, disperse 3 as dispersant, the poly-Ethylenedioxy Thiophene of 4-, again it is distributed to dispersion liquid in the water.
It should be noted that, formation material as hole injection layer 70, be not limited to described material, can use various materials, for example can use material that polystyrene, polypyrrole, polyaniline, polyacetylene or derivatives thereof is distributed in for example described polystyrolsulfon acid of suitable dispersant etc.As the formation material of hole injection layer 70, use when hanging down molecular material, adopt common hole-injecting materials such as Copper Phthalocyanine, m-MTDATA, TPD, α-NPD.In addition, use vapour deposition method to form so low molecular material.
As the material that is used to form organic EL layer 60, use can be sent the known luminescent material of fluorescence or phosphorescence.In addition, in red pixel XR, green pixel XG, blue pixel XB, be respectively arranged with machine EL layer 60R, 60G, 60B, show thereby organic El device can carry out colour.
As the macromolecular material of organic EL layer 60 (60R, 60G, 60B), be fit to use (gathering) fluorene derivative (PF), (gathering) to the polysilane system of phenylene vinylidene derivative (PPV), polyphenylene derivative (PP), poly radical derivative (PPP), polyvinylcarbazole (PVK), polythiofuran derivative, polymethyl-benzene base silane (PMPS) etc. etc.In addition, can be in these macromolecular materials low molecular material such as macromolecular material such as doping perylene kinds pigment, Coumarins pigment, rhodamine class pigment or rubrene, perylene, 9,10-diphenylanthrancene, tetraphenylbutadiene, Nile red, coumarin 6, quinoline a word used for translation ketone use.As the low molecular material of organic EL layer 60 (60R, 60G, 60B), can use Alq3, DPVBi are main material, the material of the Nile red that mixes therein, DCM, rubrene, perylene, rhodamine etc., or use independent main material.It should be noted that, use when hanging down molecular material, can form organic EL layer 60 (60R, 60G, 60B) by vapour deposition method.
In addition, formation material as the organic EL layer 60R of redness, sometimes use MEHPPV (poly-(3-methoxyl group 6-(3-ethylhexyl) is to phenylene vinylidene), formation material as the organic EL layer 60G of green, use the mixed solution of dioctyl fluorene and F8BT (alternate copolymer of dioctyl fluorene and diazosulfide), as the formation material of the organic EL layer 60B of blueness, use poly-dioctyl fluorene.
About such organic EL layer 60R, 60G, 60B, particularly, without limits, be adjusted into the thickness of hope by each color about its thickness.In addition, according to the characteristics of luminescence and luminescent lifetime, suitably adjust thickness.
In addition, the optical length of the luminous light of organic EL layer 60R, 60G, 60B is by distance L R, LG, LB (with reference to Fig. 8) regulation of the lower surface from negative electrode 50 to pixel electrode 23R, 23G, 23B.In the present embodiment, not to adjust optical length LR, LG, LB, but adjust, by above-mentioned such regulation according to the thickness of pixel electrode 23R, 23G, 23B according to the thickness of organic EL layer 60R, 60G, 60B.Therefore, during the thickness of regulation organic EL layer 60R, 60G, 60B, do not exist with ... optical length, and can pay the utmost attention to the characteristics of luminescence and luminescent lifetime is stipulated.
In addition, in Fig. 8, on organic EL layer 60, form negative electrode 50 respectively, but be not limited thereto, can form: have the area wideer, and cover organic EL layer than the gross area of organic EL layer 60.
In addition, in the present embodiment, become the structure that negative electrode 50 is set on the surface of organic EL layer 60R, 60G, 60B, but be not limited thereto, also can adopt the structure that electron injecting layer is set between organic EL layer 60R, 60G, 60B and negative electrode 50.At this moment, as the material of electron injecting layer, adopt LiF and SrF
2It should be noted that,, use the work functions such as film cathode of BCP:Cs/ITO, Mg:Ag/ITO negative electrode or LiF/Al/ITO to compare high cathode when organic EL layer 60R, 60G, 60B are when hanging down molecular material.
In addition, can sealant be set on the surface of negative electrode 50.As sealant, adopt covered cathode 50 and the passivating films such as silicon oxynitride (silicon oxynitride) film of formation.In view of the above, can suppress the intrusion of moisture and oxygen to light emitting functional layer 110.
In addition, in having the pixel group Px of said structure, also can be in the cofferdam of formation each other (next door) of red pixel XR, green pixel XG, blue pixel XB.
At this moment, can form the light emitting functional layer that constitutes by macromolecular material by drop ejection method.In addition, wish cofferdam that the cofferdam is made of inorganic material and constitute by the cofferdam that organic material constitutes.In addition, lyophily is paid on the surface in inorganic cofferdam, lyophobicity is paid on the surface in organic cofferdam.In view of the above, when forming light emitting functional layer 110 by drop ejection method, drop does not rest between the cofferdam.
In addition, light emitting functional layer can be made of low molecular material.At this moment, use the mask evaporation method to form light emitting functional layer, so need not form the cofferdam.In addition, as low light emitting functional layer of dividing subclass, wish to comprise hole input layer or electronics injection resilient coating.
(manufacture method of organic El device)
The manufacture method of organic El device of the present invention is described below with reference to Figure 10 A～10G.
Here, describe in detail to form pixel electrode 23R, 23G, 23 step (first electrode forms step).
At first, shown in Figure 10 A, prepared substrate 120.Here on the surface of substrate 120, though not shown, formed TFT112,223, interlayer dielectric.
Then, shown in Figure 10 B, on substrate 120, form the sputtered film 211A of crystallization ITO by sputtering method.The thickness of the sputtered film 211A of crystallization ITO is 40nm.
Then, shown in Figure 10 C, on the sputtered film 211A of crystallization ITO, form the first Etching mask M1.The first Etching mask M1 is by behind the spin-coating method coating anticorrosive additive material, forms by prebake (prebake), exposure-processed, development treatment.In view of the above, the sputtered film 211A of crystallization ITO exposes from the H of mask open portion.In addition, form the part of pixel electrode 23R, 23B after the first Etching mask M1 covers, and be formed on the sputtered film 211A of crystallization ITO.
Then carry out wet etching process, remove the exposed portions serve of the sputtered film 211A of the ITO that decrystallizes.Here, use chloroazotic acid as soup.Handle by ashing (ashing) then and remove the first Etching mask M1.
Through the step (first patterning step) of above Figure 10 B～Figure 10 C, on substrate 120, form crystallization ITO film 211 (Figure 10 D).
And crystallization ITO film 211 is the conducting film of lower floor's one side of pixel electrode 23R, and is the monofilm of pixel electrode 23B as shown in Figure 8.
Then shown in Figure 10 E, on substrate 120, form the sputtered film 212A of noncrystal ITO by sputtering method.In addition, for the crystallization ITO film 211 that is formed on the substrate 120, the sputtered film 212A of stacked noncrystal ITO.Here, the thickness of the sputtered film 212A of noncrystal ITO is 70nm.
Then, shown in Figure 10 F, on the sputtered film 212A of noncrystal ITO, form the second Etching mask M2.The formation method of the second Etching mask M2 and the first Etching mask M1 are same.In view of the above, the sputtered film 212A of noncrystal ITO exposes from the H of mask open portion.In addition, form the part of pixel electrode 23R, 23G after the second Etching mask M2 covers, and be formed on the sputtered film 212A of noncrystal ITO.
Then, carry out wet etching process, remove the exposed portions serve of the sputtered film 212A of noncrystal ITO.As soup, use the soup of oxalic acid class.
Because the sputtered film 212A of noncrystal ITO has the etching selectivity also higher than crystallization ITO film 11, so the sputtered film 212A of noncrystal ITO is etched.And crystallization ITO film 11 is not etched, so remain on the substrate 120.Then, remove the second Etching mask M2 by ashing treatment.
Through the step (second pattern step) of above Figure 10 E～Figure 10 F, on substrate 120, form noncrystal ITO film 212, and on crystallization ITO film 211, form noncrystal ITO film 212 (Figure 10 G).
By above step, form the pixel electrode 23R of the stacked total 110nm thickness that constitutes of pixel electrode 23G, crystallization ITO film 211 and the noncrystal ITO film 212 of the 70nm thickness that the individual layer of the pixel electrode 23B of the 40nm thickness that the individual layer by crystallization ITO film 211 constitutes, noncrystal ITO film 212 constitutes.
As mentioned above, in the organic El device 1 of present embodiment, a plurality of pixel electrode 23R of pixel group Px, 23G, 23B are formed by the different crystallization ITO film 211 of the different crystallization ITO film 211 of etching selectivity and the individual layer in the noncrystal ITO film 212 or etching selectivity and the stepped construction of noncrystal ITO film 212 respectively.And pixel electrode 23R has the stepped construction of crystallization ITO film 211 and noncrystal ITO film 212.Pixel electrode 23G has the single layer structure of noncrystal ITO film 212.Pixel electrode 23B has the stepped construction of crystallization ITO film 211.Owing to utilize the etching selectivity of conducting film to form pixel electrode 23R, 23G, 23B, so the step that forms Etching mask is than reduced in the past, in other words, can realize that the step of exposure number is cut down and the mask number is cut down, therefore can realize having reduced the organic El device of manufacturing cost.
In addition, as mentioned above, by making the thickness difference of pixel electrode 23R, 23G, 23B, thereby optical length can be adjusted, the organic El device that display performance is high can be realized.Particularly, the raising of NTSC ratio, the optimization of white balance, the netrual colourization that white shows can be realized, the degree of freedom of colour planning can be improved.
[the 4th execution mode]
The following describes the 4th execution mode of organic El device of the present invention.
Different on the material of the conducting film of present embodiment pixel electrode 23R, 23G at pie graph 8,23B, other structures are identical.
Particularly, in the present embodiment, replace crystallization ITO film 211, adopt SnO as first conducting film
2(tin oxide) replaces the noncrystal ITO film 212 as second conducting film, adopts ZnO (zinc oxide).
Such SnO
2With ZnO be the mutually different conducting film of etching selectivity.In wet etch step, ZnO has by the etched character of the soup of oxalic acid, but for same soup, SnO
2Has etched hardly character.Therefore, by oxalic acid class soup etching simultaneously SnO
2During with ZnO, etching ZnO, etching SnO hardly selectively
2Therefore, ZnO compares SnO
2The etching selectivity height.In addition, when using chloroazotic acid as soup, SnO
2All has etched character with ZnO.
If form pixel electrode 23 by such material, pixel electrode 23R just has from substrate 120 and stacks gradually SnO
2, ZnO stepped construction.Pixel electrode 23G has on substrate 120 and forms SnO
2Single layer structure.
In addition, as thickness, SnO
2Same with crystallization ITO film 211, the thickness of ZnO can be same with noncrystal ITO film 212.
In addition, pixel electrode 23R, the 23G that is made of such conducting film, the difference that forms method of 23B are: replace the sputtered film 211A of crystallization ITO, adopt SnO
2Film; The sputtered film 212A that replaces noncrystal ITO adopts ZnO film.In addition, by carrying out with the same step of described Figure 10 A～Figure 10 G.
Particularly, by forming SnO
2The step of film, form the first Etching mask M1 step, carry out step based on the wet etching process of chloroazotic acid, as the conducting film of pixel electrode 23R, 23B, form SnO
2
Then, step, the step that forms the second Etching mask M2 by forming ZnO, carry out step,, form ZnO as the conducting film of pixel electrode 23R, 23G based on the wet etching process of oxalic acid.
Therefore, as mentioned above,, also can obtain and just now the same effect of the 3rd execution mode even the material that makes conducting film is not simultaneously.
[the 5th execution mode]
The following describes the 5th execution mode of organic El device of the present invention.
In the present embodiment, pay identical symbol, and omit explanation for the structure identical with before execution mode.
Figure 11 is the cutaway view of pixel group Px of schematically representing the organic El device 1A of present embodiment.
The organic El device 1A of present embodiment aspect the top emission structure that goes out luminous light from counter substrate 130 1 side-draws with before execution mode different.
Such organic El device 1A comprises in order to realize top emission structure: the counter substrate 130 that is formed at reflectance coating 24 between pixel electrode 23 and the substrate 120, has the negative electrode 50 of the transparency, is made of transparent substrate.
Reflectance coating 24 is separately positioned on each of each color pixel XR, XG, XB on substrate 120.As material, employing Al etc. has the metal of light reflective and conductivity, with each pixel electrode 23R, 23G, 23 conductings respectively.In addition, reflectance coating 24 connects the drain electrode of above-mentioned driving with TFT223.
In addition, by the step before Figure 10 just now, pattern forms reflectance coating 24.Cover then the reflectance coating 24 be patterned, substrate 12 comprehensively, form the sputtered film 211A of crystallization ITO, by the step of Figure 10 C and Figure 10 D, form the crystallization ITO film 211 that is patterned.
For example can adopt ITO and IZO.Also can be tungsten indium oxide, indium calcium oxide.
In addition, between substrate 120 and counter substrate 130, form sealing area 140.In top emission structure, in sealing area 40, fill the sealing resin that constitutes by acrylic acid series or epoxy resin etc.In addition, between sealing resin and negative electrode 50, be provided for improving the gas barrier layer of gas barrier (gas barrier).The resilient coating that breaks that suppresses gas barrier layer or negative electrode 50 perhaps is set.
In addition, in the present embodiment, the stepped construction to pixel electrode 23G, 23R adopt crystallization ITO film 211 and noncrystal ITO film 212 adopts the single layer structure that is made of crystallization ITO film 211 to pixel electrode 23B.Therefore, in the present embodiment, pixel electrode 23G, 23R are identical thickness, and the thickness of Film Thickness Ratio pixel electrode 23G, the 23R of pixel electrode 23B is thin.When forming such pixel electrode 23R, 23G, 23B, as long as on each of pixel electrode 23R, 23G, 23B, can form crystallization ITO film 211 respectively.At this moment, in Figure 10 C, use the Etching mask of the crystallization ITO sputtered film 211A that covers the part that forms pixel electrode 23R, 23G, 23B.Therefore, different by the opening shape that makes Etching mask in the present embodiment with the first Etching mask M1 of the 3rd execution mode, thus can form pixel electrode 23R, 23G, the 23B of present embodiment.In view of the above, adjust the optical length of pixel XR, XG, XB.
As mentioned above, in the organic El device 1A of present embodiment, can make luminous light to negative electrode 50 1 side outgoing by the luminous light of reflectance coating 24 reflection light emitting functional layer 110.In addition, the luminous light of light emitting functional layer 110 comprises film 24 reflection and from the light (non-reverberation) of negative electrode 50 1 side outgoing, by the light (reverberation) of reflectance coating 24 reflection backs from negative electrode 50 1 side outgoing of not being reflected.During by reflectance coating 24 reverberation, compare with non-reverberation, optical length grows the part by the conducting film of pixel electrode 23R, 23G, 23B.As illustrating in the execution mode before, by single layer structure or stepped construction based on crystallization ITO film 211 and noncrystal ITO film 212, adjust optical length LR, LG, LB, so, also can easily adjust it even reverberation and non-reverberation mix when existing.
[the 6th execution mode]
The following describes the 6th execution mode of organic El device of the present invention.
In the present embodiment, pay identical symbol, omit explanation for the structure identical with before execution mode.Figure 12 is the cutaway view of pixel group of schematically representing the organic El device 1B of present embodiment.
The organic El device 1B of present embodiment is a top emission structure, but is with the difference of before execution mode, and counter substrate 130 works as base plate of color light filter; Light emitting functional layer 110 has white organic EL layer.
The counter substrate 130 of present embodiment as matrix, possesses dyed layer 25R, 25G, 25B, light shield layer BM to base plate of color light filter 31 in a side relative with substrate 120.
Each of each of dyed layer 25R, 25G, 25B and the pixel XR, the XG that constitute pixel group, XB is corresponding, and with light emitting functional layer 110 relative configurations.In addition, at the light shield layer of the formation each other BM of dyed layer 25R, 25G, 25B.The material of light shield layer BM is light-proofness metals such as Cr and resin black (resin black) etc.In view of the above, counter substrate 130 is taking out by dyed layer 25R, 25G, 25B from the luminous of light emitting functional layer 110.And dyed layer 25R, 25G, 25B make luminous seeing through with different light transmission characteristics.
In addition, light emitting functional layer 110 has with white luminous white organic EL layer 60W.White light is the light of the color wavelength of synthetic a plurality of peak wavelengths.
In the organic El device that constitutes like this, dyed layer 25R, 25G, 25B are arranged on the luminous light path from white organic EL layer 60W, so white light is painted by dyed layer 25R, 25G, 25B.Promptly by dyed layer 25R, from pixel XR outgoing emitting red light, by dyed layer 25G, from pixel XG outgoing green emitting, by dyed layer 25B, from pixel XB outgoing blue-light-emitting.Then, by the light after synthetic painted, thus the display light of generation pixel group Px.
As mentioned above, in the present embodiment, by making the white light that produces in the light emitting functional layer 110 see through dyed layer 25R, 25G, 25B, thereby dyed layer 25R, 25G, 25B are for white light, it is colored as RGB (wavelength of all kinds according to RGB sees through it), so can make according to pixel XR, XG, XB and different color outgoing.
In addition, as the organic EL layer that constitutes light emitting functional layer 110, as long as adopt the monochromatic luminescent material that constitutes by white organic EL layer 60W, so on each of pixel XR, XG, XB, need not coat the organic EL layer of different colours respectively.Therefore, compare during with a plurality of luminescent material of film forming, only just passable a material (white material) film forming, so the step that forms organic EL layer 60W is simplified, can realize the organic El device of the cheapness that manufacturing cost reduces.
Also have, in the present embodiment, adopt the structure that dyed layer 25R, 25G, 25B are set on counter substrate 130, but also can form these dyed layers at the back side of substrate 120 side (the non-formation face of pixel electrode).
[variation of the 6th execution mode]
The variation of the 6th execution mode before the following describes.
In this variation, replace white organic EL layer 60W, adopt organic EL layer 60R of all kinds, 60G, the 60B shown in the 5th execution mode.In addition, organic EL layer 60R, 60G, 60B, dyed layer 25R, 25G, 25B are in same color configuration relatively to each other.In such variation, the dyed layer of the RGB light transmission same color of all kinds of organic EL layer 60R of all kinds, 60G, 60B, thus can improve from the colour purity of the light of dyed layer 25R, 25G, 25B outgoing.
In addition, in above-mentioned first execution mode～6, utilize organic EL layer 60R, 60G, 60B, the white organic EL layer 60W of polychrome, the dyed layer 25 of polychrome, take out the display light of all kinds of RGB from pixel XR, XG, XB respectively.
The present invention is not limited thereto, also can adopt pixel group Px to have the structure of 4 color pixels.For example, can also have the pixel XC of complementary C (blue-green) except pixel XR, XG, the XB of primary colors.At this moment, can make thickness and other pixel electrode 23R of the pixel electrode 23C of pixel XC, 23G, 23B different, also can be identically formed with other pixel electrode 23R, 23G, 23B one.
The thickness of pixel electrode 23C and pixel electrode 23R, 23G, 23B thickness separately when promptly forming separately thickness different pixel electrode 23R, 23G, 23B, 23C, are necessary 3 kinds of conducting films that adopt etching characteristic to differ from one another not simultaneously again.And, utilize 3 kinds of conducting films by any one structure in monofilm, 2 layers of stacked film, the 3 layers of stacked film, can form pixel electrode 23R, 23G, 23B, 23C.In view of the above, each thickness difference of pixel electrode 23R, 23G, 23B, 23C can be made, the optical length of pixel XR, XG, XB, XC can be adjusted.
In addition, when the thickness of the pixel electrode 23C of pixel XC and other pixel electrode 23R, 23G, 23B one is identically formed, wish that the structure of pixel electrode 23C is identical with pixel electrode 23G or pixel electrode 23B.Because glaucous color wavelength is in the middle of B and the G, so even pixel electrode 23C is identical structure with any one party among pixel electrode 23G or the pixel electrode 23B, to optical length also almost not influence.
Like this, if the thickness of the pixel electrode 23C of pixel XC is identical with any one party among pixel electrode 23G or the pixel electrode 23B,, just can realize having adjusted 4 pixel XR, XG, XB, the XC of optical length then by 2 kinds of conducting films.In addition, when forming pixel electrode 23R, 23G, 23B, 23C, only by making the Etching mask difference of Figure 10 C, the step of the execution mode before just using is so can prevent the increase of number of steps.
In addition, beyond pixel XC, can adopt the structure of the pixel of using M (carmetta) or Y (yellow), or adopt pixel group Px to have the structure of 5 color pixels.
Having, also can be the situation of 2 color pixels again.
[to the lift-launch example of electronic instrument]
The following describes electronic instrument of the present invention.
Having used light-emitting device of the present invention (EL device) can use as display unit in various electronic instruments such as mobile phone, personal computer or PDA.In addition, having used the exposure that light-emitting device of the present invention can be used as image processing systems such as digital copier or printer uses with head.
Electronic instrument has above-mentioned organic El device 1 as display part, particularly, enumerate instrument shown in Figure 13.
Figure 13 (a) is the stereogram of an example of expression mobile phone.In Figure 13 (a), mobile phone 1000 possesses the display part 1001 that has used above-mentioned organic El device 1.
Figure 13 (b) is the stereogram of an example of expression Wristwatch-type electronic instrument.In Figure 13 (b), wrist-watch 1100 possesses the display part 1101 that has used above-mentioned organic El device 1.
Figure 13 (c) is the stereogram of an example of portable information processing devices such as expression word processor, personal computer.In Figure 13 (c), information processor 1200 has input part 1201, the display part 1202 that has used above-mentioned organic El device 1, information processor main bodys (framework 1203) such as keyboard.
Each electronic instrument shown in Figure 13 (a)～(c) comprises the display part 1001,1101,1202 with above-mentioned organic El device 1, therefore can realize cost degradation, the high display performance of the organic El device of formation display part.
Claims (19)
1. the manufacture method of an electroluminescence device, it comprises at least:
On substrate, form the step of the second plate of first anode light transmission, first thickness and second thickness;
On each of described anode, be laminated to the step of the functional layer that comprises luminescent layer less; With
The step of stacked negative electrode on described functional layer,
The step that forms described anode comprises:
Form the first step of first nesa coating of the thickness that from described first thickness, deducts described second thickness in the formation zone of the described first anode;
In the formation zone of the described first anode and regional second step that forms second nesa coating of described second thickness of formation of described second plate.
2. the manufacture method of an electroluminescence device, it comprises at least:
The step of the third anode of the second plate of formation first anode light transmission, first thickness, second thickness and the 3rd thickness on substrate;
On each of described anode, be laminated to the step of the functional layer that comprises luminescent layer less; With
The step of stacked negative electrode on described functional layer,
The step that forms described anode comprises:
Form the first step of first nesa coating of the thickness that from described first thickness, deducts described second thickness in the formation zone of the described first anode;
In the formation zone of the described first anode and regional second step that forms second nesa coating of the thickness that from described second thickness, deducts the 3rd thickness of formation of described second plate;
Form the third step of the 3rd nesa coating of described the 3rd thickness in the formation zone of the formation zone of the formation zone of the described first anode, described second plate, described third anode.
3. the manufacture method of electroluminescence device according to claim 2, wherein,
Form a plurality of pixels and form the zone on described substrate, wherein this pixel forms the pixel that pixel that pixel that the zone comprises first look at least forms zone, second look with described first look different forms zone, three look with described first look and described second look different and forms the zone;
Form in described a plurality of pixels on each of zone and stacked described first, second and third anode, described light emitting functional layer and described negative electrode are set and the light-emitting component that constitutes respectively;
Described light-emitting component is the electroluminescent cell that forms the optical resonator with reflector between described anode and described substrate;
Described first look is red;
Described second look is green;
Described the 3rd look is blue;
Utilize lithography step to carry out described first step～third step respectively.
4. electroluminescence device, it comprises at least:
On substrate, form first anode light transmission, first thickness, the second plate of second thickness and the third anode of the 3rd thickness;
Be layered on each of described anode and comprise the functional layer of luminescent layer at least; With
Be layered in the negative electrode on the described functional layer,
In the formation zone of the described first anode, by stackedly from described first thickness, deducting first nesa coating of the thickness of described second thickness, from described second thickness, deduct second nesa coating of the thickness of described the 3rd thickness, the 3rd nesa coating of described the 3rd thickness, thereby form the described first anode;
In the formation zone of described second plate,, thereby form described second plate by stacked described second nesa coating and described the 3rd nesa coating;
In the formation zone of described third anode, form described third anode by described the 3rd nesa coating.
5. electroluminescence device according to claim 4, wherein,
The light that is produced by described luminescent layer penetrates along the direction from described substrate towards described luminescent layer.
6. electroluminescence device according to claim 4, wherein,
The light-emitting component that is made of described first, second and third anode, described light emitting functional layer and described negative electrode has the optical resonator that the reflector is set between described anode and described substrate, be formed with the insulating protective layer of the light transmission that covers described reflector between described anode and described reflector.
7. electroluminescence device according to claim 6, wherein,
The refractive index of the described anode of refractive index ratio of described insulating protective layer is also little.
8. electroluminescence device according to claim 6, wherein,
The corresponding thickness of any wavelength in the optical distance that the described first anode, described second plate and described third anode are set to described optical resonator and red light, green light, the blue light.
9. electroluminescence device,
Each that is formed at a plurality of pixels on the substrate has the light emitting functional layer by first electrode and the second electrode clamping respectively;
Described a plurality of pixel comprises first pixel, second pixel, the 3rd pixel at least;
First electrode of described first pixel is by the stepped construction of the second low conducting film of high first conducting film of etching selectivity and etching selectivity and constitute;
First electrode of described second pixel is made of described first conducting film;
First electrode of described the 3rd pixel is made of described second conducting film.
10. electroluminescence device according to claim 9, wherein,
Described first conducting film and described second conducting film are nesa coatings.
11. electroluminescence device according to claim 9, wherein,
The thickness of described first conducting film is different with the thickness of described second conducting film.
12. electroluminescence device according to claim 9, wherein,
First electrode of described first pixel is made of described first conducting film, second conducting film that is layered on described first conducting film.
13. electroluminescence device according to claim 9, wherein,
Between described substrate and described first electrode, be formed with reflectance coating.
14. electroluminescence device according to claim 9, wherein,
The color that the color that the color that described first pixel penetrates, described second pixel penetrate, described the 3rd pixel penetrate has nothing in common with each other.
15. electroluminescence device according to claim 9, wherein,
The light wavelength that the light emitting functional layer of the light wavelength that the light emitting functional layer of the light wavelength that the light emitting functional layer of described first pixel is sent, described second pixel is sent, described the 3rd pixel is sent has nothing in common with each other.
16. electroluminescence device according to claim 9, wherein,
Described a plurality of pixel comprises the dyed layer that is relative to the configuration with described light emitting functional layer respectively,
The color of the dyed layer of the color of the dyed layer of the color of the dyed layer of described first pixel, described second pixel, described the 3rd pixel has nothing in common with each other.
17. an electronic instrument comprises claim 4 or 9 described electroluminescence devices.
18. the manufacture method of an electroluminescence device,
Each that is formed at a plurality of pixels on the substrate has the light emitting functional layer by first electrode and the second electrode clamping respectively;
Described a plurality of pixel comprises first pixel, second pixel, the 3rd pixel at least;
The step that forms described first electrode is by the step that forms etching selectivity second conducting film also lower than described first conducting film in the step that forms first conducting film on described first pixel and second pixel, on the described first and the 3rd pixel.
19. the manufacture method of electroluminescence device according to claim 18, wherein,
The step that forms described first electrode comprises:
After forming first conducting film on the described substrate, carry out first patterning step of patterning;
On by first conducting film of the described first patterning step patterning and described substrate, form described second conducting film, and described second conducting film is carried out second patterning step of patterning.
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| JP2005206552A JP4449846B2 (en) | 2005-07-15 | 2005-07-15 | Method for manufacturing electroluminescence device |
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| JP2005206708 | 2005-07-15 |
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| CN103733727A (en) * | 2011-09-26 | 2014-04-16 | 夏普株式会社 | Method for manufacturing display device |
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| JP2008189183A (en) | 2007-02-06 | 2008-08-21 | Ichikoh Ind Ltd | Mirror device for vehicle |
| JP5256909B2 (en) * | 2007-10-31 | 2013-08-07 | セイコーエプソン株式会社 | Light emitting device |
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-
2005
- 2005-07-15 JP JP2005206552A patent/JP4449846B2/en not_active Expired - Fee Related
-
2006
- 2006-07-13 CN CNB200610105833XA patent/CN100499075C/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103733727A (en) * | 2011-09-26 | 2014-04-16 | 夏普株式会社 | Method for manufacturing display device |
| CN103733727B (en) * | 2011-09-26 | 2016-08-31 | 夏普株式会社 | The manufacture method of display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4449846B2 (en) | 2010-04-14 |
| JP2007026849A (en) | 2007-02-01 |
| CN1897252A (en) | 2007-01-17 |
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