CN100497730C - 一种多孔SiO2薄膜的制备方法 - Google Patents
一种多孔SiO2薄膜的制备方法 Download PDFInfo
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- CN100497730C CN100497730C CN 200610163825 CN200610163825A CN100497730C CN 100497730 C CN100497730 C CN 100497730C CN 200610163825 CN200610163825 CN 200610163825 CN 200610163825 A CN200610163825 A CN 200610163825A CN 100497730 C CN100497730 C CN 100497730C
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- porous sio
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CN 200610163825 CN100497730C (zh) | 2006-12-20 | 2006-12-20 | 一种多孔SiO2薄膜的制备方法 |
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CN 200610163825 CN100497730C (zh) | 2006-12-20 | 2006-12-20 | 一种多孔SiO2薄膜的制备方法 |
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CN1974839A CN1974839A (zh) | 2007-06-06 |
CN100497730C true CN100497730C (zh) | 2009-06-10 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9508544B2 (en) | 2012-05-28 | 2016-11-29 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102800569B (zh) * | 2012-09-11 | 2015-11-04 | 上海华力微电子有限公司 | 基于硅烷的二氧化硅膜形成方法以及半导体器件制造方法 |
US9012912B2 (en) * | 2013-03-13 | 2015-04-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafers, panels, semiconductor devices, and glass treatment methods |
CN108424600A (zh) * | 2018-04-17 | 2018-08-21 | 河南工程学院 | 一种具有疏松结构的聚乙烯醇薄膜及其制备方法 |
CN111430569A (zh) * | 2020-03-31 | 2020-07-17 | 武汉华星光电半导体显示技术有限公司 | 封装层及其制备方法 |
CN111235547B (zh) * | 2020-04-27 | 2020-08-07 | 上海陛通半导体能源科技股份有限公司 | 化学气相沉积方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6054735A (en) * | 1995-11-16 | 2000-04-25 | Advanced Micro Devices, Inc. | Very thin PECVD SiO2 in 0.5 micron and 0.35 micron technologies |
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Patent Citations (1)
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US6054735A (en) * | 1995-11-16 | 2000-04-25 | Advanced Micro Devices, Inc. | Very thin PECVD SiO2 in 0.5 micron and 0.35 micron technologies |
Non-Patent Citations (8)
Title |
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High quality low temperature DPECVD silicon dioxide. I.Pereyra , M.I.Alayo.Journal of Non-Crystalline Solids,No.212. 1997 |
High quality low temperature DPECVD silicon dioxide. I.Pereyra , M.I.Alayo.Journal of Non-Crystalline Solids,No.212. 1997 * |
PECVD SiO2薄膜应力特性的研究. 杨绪华,孙青.固体电子学研究与进展,第9卷第2期. 1989 |
PECVD SiO2薄膜应力特性的研究. 杨绪华,孙青.固体电子学研究与进展,第9卷第2期. 1989 * |
Structural properties of SiO2 films preparedby plasma-enhanced chemical vapor deposition. Fabio Iacona, Giulio Ceriola, Francesco La Via.Materials Science in Semiconductor Processing,No.4. 2001 |
Structural properties of SiO2 films preparedby plasma-enhanced chemical vapor deposition. Fabio Iacona, Giulio Ceriola, Francesco La Via.Materials Science in Semiconductor Processing,No.4. 2001 * |
Thick SiOxNy and SiO2 films obtained by PECVD techniqueat low temperatures. M.I. Alayo, I.Pereyra, M.N.P.Carreno.Thin Solid Films,No.332. 1998 |
Thick SiOxNy and SiO2 films obtained by PECVD techniqueat low temperatures. M.I. Alayo, I.Pereyra, M.N.P.Carreno.Thin Solid Films,No.332. 1998 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9508544B2 (en) | 2012-05-28 | 2016-11-29 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
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CN1974839A (zh) | 2007-06-06 |
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Assignee: Yunnan Beifang Photoelectric Instrument Co., Ltd. Assignor: Kunming Inst. of Physics Contract record no.: 2010530000048 Denomination of invention: Method for preparing porous SiO2 film Granted publication date: 20090610 License type: Exclusive License Open date: 20070606 Record date: 20100928 |
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Granted publication date: 20090610 Termination date: 20151220 |
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