CN1974839A - 一种多孔SiO2薄膜的制备方法 - Google Patents
一种多孔SiO2薄膜的制备方法 Download PDFInfo
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- CN1974839A CN1974839A CN 200610163825 CN200610163825A CN1974839A CN 1974839 A CN1974839 A CN 1974839A CN 200610163825 CN200610163825 CN 200610163825 CN 200610163825 A CN200610163825 A CN 200610163825A CN 1974839 A CN1974839 A CN 1974839A
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CN 200610163825 CN100497730C (zh) | 2006-12-20 | 2006-12-20 | 一种多孔SiO2薄膜的制备方法 |
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CN 200610163825 CN100497730C (zh) | 2006-12-20 | 2006-12-20 | 一种多孔SiO2薄膜的制备方法 |
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CN1974839A true CN1974839A (zh) | 2007-06-06 |
CN100497730C CN100497730C (zh) | 2009-06-10 |
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CN 200610163825 Expired - Fee Related CN100497730C (zh) | 2006-12-20 | 2006-12-20 | 一种多孔SiO2薄膜的制备方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102800569A (zh) * | 2012-09-11 | 2012-11-28 | 上海华力微电子有限公司 | 基于硅烷的二氧化硅膜形成方法以及半导体器件制造方法 |
CN104045243A (zh) * | 2013-03-13 | 2014-09-17 | 台湾积体电路制造股份有限公司 | 晶圆、面板、半导体器件以及玻璃处理方法 |
CN108424600A (zh) * | 2018-04-17 | 2018-08-21 | 河南工程学院 | 一种具有疏松结构的聚乙烯醇薄膜及其制备方法 |
CN111235547A (zh) * | 2020-04-27 | 2020-06-05 | 上海陛通半导体能源科技股份有限公司 | 化学气相沉积方法 |
CN111430569A (zh) * | 2020-03-31 | 2020-07-17 | 武汉华星光电半导体显示技术有限公司 | 封装层及其制备方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150171220A1 (en) | 2012-05-28 | 2015-06-18 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US5736423A (en) * | 1995-11-16 | 1998-04-07 | Advanced Micro Devices, Inc. | Method for depositing very thin PECVD SiO2 in 0.5 micron and 0.35 micron technologies |
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2006
- 2006-12-20 CN CN 200610163825 patent/CN100497730C/zh not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102800569A (zh) * | 2012-09-11 | 2012-11-28 | 上海华力微电子有限公司 | 基于硅烷的二氧化硅膜形成方法以及半导体器件制造方法 |
CN102800569B (zh) * | 2012-09-11 | 2015-11-04 | 上海华力微电子有限公司 | 基于硅烷的二氧化硅膜形成方法以及半导体器件制造方法 |
CN104045243A (zh) * | 2013-03-13 | 2014-09-17 | 台湾积体电路制造股份有限公司 | 晶圆、面板、半导体器件以及玻璃处理方法 |
CN108424600A (zh) * | 2018-04-17 | 2018-08-21 | 河南工程学院 | 一种具有疏松结构的聚乙烯醇薄膜及其制备方法 |
CN111430569A (zh) * | 2020-03-31 | 2020-07-17 | 武汉华星光电半导体显示技术有限公司 | 封装层及其制备方法 |
WO2021196271A1 (zh) * | 2020-03-31 | 2021-10-07 | 武汉华星光电半导体显示技术有限公司 | 封装层及其制备方法 |
CN111235547A (zh) * | 2020-04-27 | 2020-06-05 | 上海陛通半导体能源科技股份有限公司 | 化学气相沉积方法 |
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Publication number | Publication date |
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CN100497730C (zh) | 2009-06-10 |
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Yunnan Beifang Photoelectric Instrument Co., Ltd. Assignor: Kunming Inst. of Physics Contract record no.: 2010530000048 Denomination of invention: Method for preparing porous SiO2 film Granted publication date: 20090610 License type: Exclusive License Open date: 20070606 Record date: 20100928 |
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Granted publication date: 20090610 Termination date: 20151220 |
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