CN100479138C - Embedded metal cooling seat of semiconductor component and method of producing the same - Google Patents
Embedded metal cooling seat of semiconductor component and method of producing the same Download PDFInfo
- Publication number
- CN100479138C CN100479138C CN 200610140721 CN200610140721A CN100479138C CN 100479138 C CN100479138 C CN 100479138C CN 200610140721 CN200610140721 CN 200610140721 CN 200610140721 A CN200610140721 A CN 200610140721A CN 100479138 C CN100479138 C CN 100479138C
- Authority
- CN
- China
- Prior art keywords
- semiconductor element
- cooling seat
- metal cooling
- metal layer
- thin metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses an embedded metal heat radiation base of semiconductor element and a method for manufacturing the same. The embedded metal heat radiation base of the semiconductor element at least comprises a metal thin-layer, a metal heat radiating base and two electrode pads, wherein, the metal thin-layer is provided with a first surface and a second surface which are opposite to each other, wherein, at least one semiconductor element is embedded on the first surface of the metal thin-layer, the semiconductor element is provided with two electrodes which have the opposite electric property; the metal heat radiating base is arranged to be connected with the second surface of the metal thin-layer; two electrode pads are arranged on the first surface of the metal thin-layer around the semiconductor element and respectively correspond to the electrodes, wherein, the electrodes are respectively in electric connection with the corresponding electrode pads through at least two leads, and these electrode pads are in electric connection with an external circuit.
Description
Technical field
The present invention relates to a kind of metal cooling seat (Heat Sink) and manufacture method thereof, relate in particular to embedded (Embedded) metal cooling seat and the manufacture method thereof of a kind of photoelectric cell (Opto-Electrical Device).
Background technology
Semiconductor element comprises the low profile photovoltaic element, for example light-emitting diode (Light-emitting Diode; LED) or laser diode (Laser Diode; LD), when being applied in large-scale or small-sized backlight module (BacklightModule) or lighting module, all need use a large amount of photoelectric cells that enough brightness and illumination just can be provided.Yet when operating under high input power condition, the temperature of the module of being made up of various photoelectric cells can fast rise, not only can influence the operational quality of module, more may cause photoelectric cell Yin Gaowen wherein and burns.
The problem that the temperature that is faced when operating for the solution photoelectric element module raises, modes such as many at present plug-in fans of use or increase heating panel area reduce the temperature of module.Yet in the mode of plug-in fan, the vibrations that the running of fan produced will cause the light source stability difference and cause light source scintillation, and the electric fan running needs to consume extra power.On the other hand, increase in the mode of heating panel area, though radiating seat can adopt the metal of high thermal conductivity coefficient, yet photoelectric cell is the colloid that is mixed with metal with the media that engages between the radiating seat, but the conductive coefficient of colloid is far below simple metal, therefore the heat that will be produced in the time of will causing the device running is accumulated on the joint interface more, cause radiating seat can't bring into play its heat sinking function really, and cause the heat dissipation of radiating seat not good, cause photoelectric cell under long period of operation, to damage easily or can't under big input power condition, operate.
In addition, for semiconductor element and external circuit are electrically connected, usually all need heating panel is bonded on the circuit board with colloid, thus, the heat that is produced during the device running not only can be accumulated on the colloid, and the coefficient of heat conduction by the circuit board that plastics constituted is not high yet, so thermal conduction rate is low, can cause the heat dissipation of heating panel seriously to descend yet.
Therefore, along with the raising day by day of the application demand of photoelectric cells such as light-emitting diode or laser diode on various modules, press for a kind of technology of producing photoelectric cell with high heat dissipation efficiency.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of embedded metal cooling seat of semiconductor element, has at least one electronic pads, can be used as the switching electrode that electrically connects between the both positive and negative polarity of semiconductor element and the external circuit, so the semiconductor element that is embedded on metal cooling seat is connected smoothly with external circuit.
Another object of the present invention is the manufacture method at the embedded metal cooling seat that a kind of semiconductor element is provided, by assisting of adhesive tape, can directly metal cooling seat be deposited on the bottom surface of semiconductor element, and need not stickup or utilization coating technique by colloid, electronic pads is set on the metal cooling seat around the semiconductor element in addition again is used as the electrode of semiconductor element and the switching of external circuit electric connection.Therefore, not only can be rapidly and reduce the temperature of running element effectively, to guarantee the operational quality of element, prolong the life-span of element, the both positive and negative polarity of semiconductor element is connected smoothly with external circuit, and saves the use of circuit board.
According to above-mentioned purpose of the present invention, a kind of embedded metal cooling seat of semiconductor element is proposed, at least comprise: a thin metal layer, have opposite first and second surface, wherein at least one semiconductor element is embedded in the first surface of thin metal layer, and semiconductor element has electrically two opposite electrodes; One metal cooling seat is engaged in the second surface of thin metal layer; And two electronic pads, be located on the first surface of semiconductor element thin metal layer on every side, and correspond respectively to two electrodes of semiconductor element, wherein each this electrode electrically connects with corresponding electronic pads by at least one lead respectively, and these electronic padses and external circuit electric connection.
According to purpose of the present invention, a kind of manufacture method of embedded metal cooling seat of semiconductor element is proposed, at least comprise: an adhesive tape is provided, and wherein this adhesive tape has opposite first and second surface, and the first surface of this adhesive tape is pasted on the surface of a temporary substrate; At least one semiconductor element is provided, wherein this semiconductor element has the first relative side and second side, and first side pressure of this semiconductor element is located in the part of second surface of adhesive tape, and second side of semiconductor element is exposed, and semiconductor element has electrically two different electrodes; Form a thin metal layer on the expose portion of the second surface of second side of semiconductor element and adhesive tape, wherein second side engagement of the part on a surface of thin metal layer and semiconductor element; Form a metal cooling seat on thin metal layer; Remove adhesive tape and temporary substrate, to expose the surface of semiconductor element and thin metal layer; And a plurality of electronic padses are set on the expose portion on the surface of the thin metal layer around this semiconductor element, wherein these electronic padses correspond respectively to two electrodes of semiconductor element, and each this electrode can be respectively electrically connects with corresponding electronic pads by at least one lead.
According to a preferred embodiment of the present invention, the material of above-mentioned metal cooling seat is iron/nickel alloy, copper, nickel, aluminium, tungsten or its alloy, and each electronic pads comprises insulating barrier and is positioned at conductive layer on this insulating barrier that wherein insulating barrier is positioned on the first surface of thin metal layer.
By directly being produced on metal cooling seat on the semiconductor element, semiconductor element directly is embedded in metal cooling seat, on the metal cooling seat around the semiconductor element electronic pads is set again, for the group through-connection station of electrically getting in touch between the electrode of semiconductor element and the external circuit.Therefore, metal cooling seat can need not to be arranged on the circuit board in addition, and then can significantly improve the radiating efficiency of semiconductor element, guarantees the stable operation degree of element, effectively prolongs the useful life of element.
Description of drawings
The top view of Figure 1A for being sticked according to adhesive tape in a preferred embodiment of the present invention on temporary substrate;
The profile of Figure 1B for being sticked according to adhesive tape in a preferred embodiment of the present invention on temporary substrate;
Fig. 2 A is for according in a preferred embodiment of the present invention photoelectric cell being pressed the top view be located at behind the adhesive tape;
Fig. 2 B is for according in a preferred embodiment of the present invention photoelectric cell being pressed the profile be located at behind the adhesive tape;
Fig. 2 C is for being located at the profile of photoelectric cell the same side according to two electrodes of a preferred embodiment of the present invention;
Fig. 2 D is for being located at the profile of the relative both sides of photoelectric cell according to two electrodes of a preferred embodiment of the present invention;
Fig. 3 A is for being formed on the top view on photoelectric cell and the adhesive tape according to thin metal layer in a preferred embodiment of the present invention;
Fig. 3 B is for being formed on the profile on photoelectric cell and the adhesive tape according to thin metal layer in a preferred embodiment of the present invention;
Fig. 4 A is for being formed on the top view on the thin metal layer according to reflection layer in a preferred embodiment of the present invention;
Fig. 4 B is for being formed on the profile on the thin metal layer according to reflection layer in a preferred embodiment of the present invention;
Fig. 5 A is for being formed on the top view on the reflection layer according to metal cooling seat in a preferred embodiment of the present invention;
Fig. 5 B is for being formed on the profile on the reflection layer according to metal cooling seat in a preferred embodiment of the present invention;
Fig. 6 is for according to the profile that removes in a preferred embodiment of the present invention behind adhesive tape and the temporary substrate;
Fig. 7 is according to the profile after electronic pads forms in a preferred embodiment of the present invention;
Fig. 8 is according to the profile after lead forms in a preferred embodiment of the present invention.
Wherein, Reference numeral:
100: temporary substrate 102: adhesive tape
104: surface 106: surface
108a: photoelectric cell 108b: photoelectric cell
110: electrode 112: electrode
114: thin metal layer 116: silverskin
118: golden film 120: reflection layer
122: metal cooling seat 124: insulating barrier
126: conductive layer 128: electronic pads
130: insulating barrier 132: conductive layer
134: electronic pads 136: lead
138: lead 140: the adhesion colloid
Embodiment
The present invention discloses a kind of embedded metal cooling seat and manufacture method thereof of semiconductor element, the electrode of semiconductor element and external circuit is got in touch smoothly, and can improve the heat dissipation of metal cooling seat, significantly improves the heat dissipation problem of semiconductor element.In order to make narration of the present invention more detailed and complete, can be with reference to the diagram of following description and cooperation Figure 1A to Fig. 8.
With reference to Figure 1A to Fig. 8, it is according to the process section of the embedded metal cooling seat of a kind of semiconductor element of a preferred embodiment of the present invention and corresponding top view.When making the embedded metal cooling seat of semiconductor element of the present invention, temporary substrate 100 and adhesive tape 102 are provided earlier, again adhesive tape 102 is sticked on temporary substrate 100, and make the surface 104 of adhesive tape 102 and a surface engagement of temporary substrate 100, shown in the top view of the profile of Figure 1B and corresponding Figure 1A.Adhesive tape 102 has another surface 106 with respect to surface 104.The material of adhesive tape 102 is preferably the material of tool acid and alkali-resistance characteristic, and the thickness of adhesive tape 102 is preferably greater than about 10 μ m.In a preferred embodiment of the present invention, the thickness of adhesive tape 102 is better to be about 100 μ m, and adhesive tape 102 is a two-sided adhesive tape, and promptly the surface 104 and 106 of adhesive tape 102 all has viscosity.Yet, more noticeablely be in the present invention,, can only have surperficial 104 to have viscosity, and facing surfaces 106 can not have viscosity if adhesive tape 102 is when being made up of soft plastic material.
Next, provide one or more semiconductor element, wherein semiconductor element can for example be transistor, single stone integrated circuit (Monolithic IC) or photoelectric cell, for example light-emitting diode or laser diode.Semiconductor element has electrically two opposite electrodes, and wherein this two electrode can be positioned at the same side of semiconductor element or homonymy not, photoelectric cell 108a and 108b shown in Fig. 2 C and Fig. 2 D.In example embodiment, two electrodes 110 and 112 of photoelectric cell 108a all are located on the same side of photoelectric cell 108a; Two electrodes 110 of photoelectric cell 108b and 112 then are located at respectively on relative two sides of photoelectric cell 108b.When electrode 110 electrically be the N type time, electrode 112 is the P type; And when electrode 110 electrically be the P type time, 112 at electrode is the N type.In this example embodiment, semiconductor element adopts photoelectric cell 108a.The side of photoelectric cell 108a is pushed downwards towards the surface 106 of adhesive tape 102, and photoelectric cell 108a is pasted or be embedded in the surface 106 of being fixed in adhesive tape 102, and the opposite side with respect to the photoelectric cell 108a of this side that is sticked is come out, wherein the side that is pressed in the adhesive tape 102 of photoelectric cell 108a is provided with two electrodes 110 and 112, shown in the top view of the profile of Fig. 2 B and corresponding Fig. 2 A.In the present invention, the side that is sticked that photoelectric cell 108a is pressed in the adhesive tape 102 need be provided with at least one electrode, to prevent two electrode conductions.When carrying out the technology of many photoelectric cell 108a simultaneously, these photoelectric cells 108a can arrange arbitrarily according to process requirements.
After being fixed in photoelectric cell 108a in the adhesive tape 102, directly utilize for example vapor deposition mode, sputter-deposited mode or electroless-plating mode, form on the exposed region on surface 106 that thin metal layer 114 covers the exposed surface of photoelectric cell 108a and adhesive tape 102, shown in Fig. 3 A and Fig. 3 B.In the present invention, the preferable metal material of selecting the tool tack for use of the material of thin metal layer 114, the alloy of nickel, chromium, titanium or these metals for example is in order to the deposition of metal material.In addition, the thin metal layer material of the also optional apparatus high light reflectivity of the material of thin metal layer 114 rate, for example preferable metal of silver, platinum, aluminium, gold, nickel, titanium isoreflectance or the alloy of these metals.Among the present invention, thin metal layer 114 can be the single-layer metal structure, also can be the multiple layer metal stack architecture.The thickness of thin metal layer 114 is preferably less than about 10 μ m, and in an example embodiment, the thickness of thin metal layer 114 is about 10nm.
After treating that thin metal layer 114 forms, can directly make radiating seat of semiconductor element, perhaps can be according to product demand optionally to belonging to the light reflection structure that is provided with of photoelectric cell in the semiconductor element, to improve the light utilization efficiency of photoelectric cell.In the present embodiment, can utilize vapor deposition method, sputter-deposited method, wireless plating technology or galvanoplastic formation reflection layer 120 to cover on the thin metal layer 114 of photoelectric cell 108a top, wherein the material of reflection layer 120 can adopt the preferable metal of reflectivity, be the alloy of silver, platinum, aluminium, gold, nickel, titanium or above-mentioned metal for example, and can be single metal level or multilayer composite metal layer.Shown in Fig. 4 A and Fig. 4 B, in this preferred embodiment, reflection layer 120 is made of with golden film 118 silverskin 116 on thin metal layer 114 of storehouse in regular turn, and wherein the thickness of silverskin 116 is about 300nm, and the thickness of golden film 118 is about 150nm.In the present invention, the thickness of reflection layer 120 is preferably less than about 10 μ m.Yet when thin metal layer 114 adopted the thin metal layer material of tool high light reflectivity rate, thin metal layer 114 can provide the light reflection function, and need not additionally to be provided with reflection layer again.
Then, utilize for example plating mode or electroless-plating mode, form metal cooling seat 122 and cover on the reflection layer 120, wherein this metal cooling seat is made of the thicker metal of one deck, so that bigger amount of thermal conduction to be provided, shown in the top view of the profile of Fig. 5 B and Fig. 5 A.Because the present invention adopts plating mode or electroless-plating mode to make metal cooling seat 122, so metal cooling seat 122 is only grown up on reflection layer 120.The preferable system of the material of metal cooling seat 122 adopts the good metal of thermal diffusivity, for example alloy of iron/nickel alloy, copper, nickel, aluminium, tungsten or these metals.Metal cooling seat 122 has bigger thickness usually, and for example thickness is preferable can be greater than about 10 μ m, so that bigger amount of thermal conduction to be provided.In one embodiment of this invention, the thickness of metal cooling seat 122 is about 3mm.
A feature of the present invention is utilized depositional modes such as evaporation, sputter or electroless-plating exactly, make the less thin metal layer of thickness earlier, be used as the plating of follow-up metal cooling seat or the basis of electroless-plating, demand according to semiconductor element optionally is provided with reflection layer again, takes out efficient with the light that improves photoelectric cell.Because only by means of single adhesive tape, metal cooling seat can be produced on the bottom surface of semiconductor element, therefore use method of the present invention, not only technology is quite simple, and can use existing equipment and can not cause burden to the technology cost.In addition, semiconductor element is embedded in the surface of metal cooling seat, there is no the existence of colloid between semiconductor element and the metal cooling seat, therefore can significantly improve the heat transfer area and the thermal conduction rate of semiconductor element.
After treating the completing of metal cooling seat 122, be removable adhesive tape 102 and temporary substrate 100, and a side that exposes photoelectric cell 108a and the electrode 110 of being located at this side and 112 and the surface of thin metal layer 114 1 sides at photoelectric cell 108a place, as shown in Figure 6.Because thin metal layer 114 and photoelectric cell 108a are sticked on temporary substrate 100 by adhesive tape 102, therefore heat radiating metal seat 122, thin metal layer 114, reflection layer 120 and photoelectric cell 108a can be separated with temporary substrate 100 quite easily.
Next, can utilize bonding method, several electronic padses 128 and 134 are pasted and fixed on the exposed surface of photoelectric cell 108a thin metal layer 114 on every side, as shown in Figure 7 with adhesion colloid 140.Electronic pads 128 mainly comprises insulating barrier 124 and conductive layer 126, and wherein insulating barrier 124 is bonded on the surface of thin metal layer 114 by adhesion colloid 140, and conductive layer 126 then is located on the insulating barrier 124.Similarly, electronic pads 134 mainly also includes insulating barrier 130 and conductive layer 132, and wherein insulating barrier 130 is bonded on the surface of thin metal layer 114 by adhesion colloid 140, and conductive layer 132 then is located on the insulating barrier 130.In the present invention, because a semiconductor element has electrically two different electrodes at least, so each semiconductor element is preferably and two electronic padses are arranged in pairs or groups, and promptly each electrode corresponds respectively to an electronic pads.
Then, can utilize the routing mode to form at least two leads 136 and 138, the electrode 110 and the conductive layer 126 of electronic pads 128 and the conductive layer 132 of electrode 112 and electronic pads 134 that connect photoelectric cell respectively, to electrically connect electrode 110 and electronic pads 128 and electrode 112 and electronic pads 134 respectively, as shown in Figure 8.In the present invention, not necessarily only utilize a lead to be connected with between electrical electrode and the electronic pads, for example, positive electrode can utilize four leads to be connected with the positive electricity polar cushion, negative electrode then can utilize three leads to be connected with the negative electricity polar cushion, therefore each electrical electrode and with a lead need be set between the electrical electronic pads at least, but can be increased and decreased with the chip design demand with the quantity that is connected lead between the electronic pads with electrical electrode.Because the lead of external circuit (not shown) is comparatively thick, and the size of the electrode 110 of semiconductor elements such as photoelectric cell 108a and 112 is less, and be unfavorable for external circuit directly therewith two electrodes 110 engage with 112, therefore size is much larger than the electronic pads 128 of electrode 110 and 112 and 134 setting, make external circuit can be easily with engage.The electronic pads 128 and 134 of switching usefulness is set on the surface by the thin metal layer 114 around photoelectric cell 108a, the technology that engages by routing again, electrode 110 on the photoelectric cell 108a and 112 can be respectively by lead 136 and electronic pads 128 and lead 138 and electronic pads 134, electrically connect with the external circuit that is bonded on electronic pads 128 and 134 smoothly, and need not to pass through again circuit board.
Another feature of the present invention is exactly because metal cooling seat is provided with the electronic pads of switching usefulness, not only help the electric connection of the electrode and the external circuit of semiconductor element, and need not to pass through again circuit board, more need not to be arranged on the circuit board, but therefore metal cooling seat is brought into play its heat sinking function fully because of metal cooling seat.
By the invention described above preferred embodiment as can be known, an advantage of the present invention is exactly because the embedded metal cooling seat of semiconductor element of the present invention has at least one electronic pads, can be used as the switching electrode that electrically connects between the both positive and negative polarity of semiconductor element and the external circuit, therefore the semiconductor element that is embedded on metal cooling seat is connected smoothly with external circuit, and the use that can save circuit board.
By the invention described above preferred embodiment as can be known, another advantage of the present invention is exactly because the embedded metal cooling seat of semiconductor element of the present invention can need not to be sticked to circuit board again, semiconductor element and external circuit on it are electrically connected, therefore can bring into play the heat dissipation of metal cooling seat really.
By the invention described above preferred embodiment as can be known, another advantage of the present invention is exactly because the manufacture method of the embedded metal cooling seat of semiconductor element of the present invention, by assisting of adhesive tape, can directly metal cooling seat be deposited on the bottom surface of semiconductor element, and need not stickup or utilization coating technique by colloid, therefore not only the simple and reliable degree of technology is high, more can be rapidly and reduce the element temperature in when running effectively, reach the operational quality of guaranteeing element and the purpose that prolongs the life-span of element.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; being familiar with those of ordinary skill in the art ought can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (15)
1. the embedded metal cooling seat of a semiconductor element is characterized in that, comprises at least:
One thin metal layer has a relative first surface and a second surface, and wherein at least one semiconductor element is embedded in this first surface of this thin metal layer, and this semiconductor element has electrically two opposite electrodes;
One metal cooling seat is engaged in this second surface of this thin metal layer; And
Two electronic padses, be located on this first surface of this semiconductor element this thin metal layer on every side, and correspond respectively to this electrode, wherein each this electrode electrically connects with corresponding this electronic pads by at least one lead respectively, and this electronic pads and external circuit electric connection.
2. the embedded metal cooling seat of semiconductor element according to claim 1, it is characterized in that, this semiconductor element mainly is made up of a compound semiconductor materials, and this compound semiconductor materials is gallium nitride series material, AlGaInP series material, vulcanized lead series material or silicon-carbide series material.
3. the embedded metal cooling seat of semiconductor element according to claim 1, it is characterized in that, the material of this thin metal layer is a tool adhesive force metal or a tool high light reflectivity rate metal, and the material of this tool adhesive force metal is the alloy of nickel, chromium, titanium or above-mentioned metal, and the material of this tool high light reflectivity rate metal is the alloy of silver, platinum, aluminium, gold, nickel, titanium or above-mentioned metal.
4. the embedded metal cooling seat of semiconductor element according to claim 1 is characterized in that, the thickness of this thin metal layer is less than 10 μ m.
5. the embedded metal cooling seat of semiconductor element according to claim 1 is characterized in that, the material of this metal cooling seat is iron/nickel alloy, copper, nickel, aluminium, tungsten or its alloy.
6. the embedded metal cooling seat of semiconductor element according to claim 1 is characterized in that, the thickness of this metal cooling seat is greater than 10 μ m.
7. the embedded metal cooling seat of semiconductor element according to claim 1 is characterized in that, each this electronic pads comprises:
One insulating barrier is positioned on this first surface of this thin metal layer; And
One conductive layer is positioned on this insulating barrier.
8. the embedded metal cooling seat of semiconductor element according to claim 1 is characterized in that, comprises at least that also a reflection layer is located between this metal cooling seat and this thin metal layer.
9. the manufacture method of the embedded metal cooling seat of a semiconductor element is characterized in that, comprises at least:
One adhesive tape is provided, and this adhesive tape has a relative first surface and a second surface, and this first surface of this adhesive tape is pasted on the surface of a temporary substrate;
At least one semiconductor element is provided, this semiconductor element has one first relative side and one second side, and this of this semiconductor element first side pressure is located in the part of this second surface of this adhesive tape, and this second side of this semiconductor element is exposed, and this semiconductor element has electrically two different electrodes;
Form a thin metal layer on an expose portion of this second surface of this second side of this semiconductor element and this adhesive tape, this second side engagement of the part on a surface of this thin metal layer and this semiconductor element;
Form a metal cooling seat on this thin metal layer;
Remove this adhesive tape and this temporary substrate, to expose this surface of this semiconductor element and this thin metal layer; And
A plurality of electronic padses are set on this surperficial expose portion of this thin metal layer around this semiconductor element, this electronic pads corresponds respectively to this electrode of this semiconductor element, and each this electrode can be respectively electrically connects with corresponding this electronic pads by at least one lead.
10. the manufacture method of the embedded metal cooling seat of semiconductor element according to claim 9 is characterized in that, this first surface of this adhesive tape and the equal toughness of this second surface.
11. the manufacture method of the embedded metal cooling seat of semiconductor element according to claim 9 is characterized in that, the material of this adhesive tape is the material of tool acid and alkali-resistance characteristic.
12. the manufacture method of the embedded metal cooling seat of semiconductor element according to claim 9 is characterized in that, the step system that forms this thin metal layer utilizes vapor deposition method, sputter-deposited method or wireless plating technology.
13. the manufacture method of the embedded metal cooling seat of semiconductor element according to claim 9 is characterized in that, the step that forms this metal cooling seat is to utilize plating mode or electroless-plating mode.
14. the manufacture method of the embedded metal cooling seat of semiconductor element according to claim 9 is characterized in that, each this electronic pads comprises:
One insulating barrier is positioned on this first surface of this thin metal layer; And
One conductive layer is positioned on this insulating barrier.
15. the manufacture method of the embedded metal cooling seat of semiconductor element according to claim 9, it is characterized in that, form the step of this thin metal layer and form between the step of this metal cooling seat, also comprise at least forming the step of a reflection layer on this thin metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610140721 CN100479138C (en) | 2006-09-30 | 2006-09-30 | Embedded metal cooling seat of semiconductor component and method of producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610140721 CN100479138C (en) | 2006-09-30 | 2006-09-30 | Embedded metal cooling seat of semiconductor component and method of producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101154637A CN101154637A (en) | 2008-04-02 |
| CN100479138C true CN100479138C (en) | 2009-04-15 |
Family
ID=39256188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610140721 Expired - Fee Related CN100479138C (en) | 2006-09-30 | 2006-09-30 | Embedded metal cooling seat of semiconductor component and method of producing the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100479138C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113805290B (en) * | 2021-09-16 | 2023-01-24 | 青岛海信宽带多媒体技术有限公司 | Optical module |
-
2006
- 2006-09-30 CN CN 200610140721 patent/CN100479138C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101154637A (en) | 2008-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102907183B (en) | For the plating systems of LED | |
| US7723829B2 (en) | Embedded metal heat sink for semiconductor | |
| EP2193696B1 (en) | High thermal performance packaging for optoelectronics devices | |
| US8872330B2 (en) | Thin-film semiconductor component and component assembly | |
| CN102388473A (en) | Light-emitting diode package | |
| US20120049204A1 (en) | Led module | |
| CN102054905A (en) | Light emitting diode chip with heat conducting layers | |
| US7387915B2 (en) | Method for manufacturing heat sink of semiconductor device | |
| US20070121327A1 (en) | Light-emitting device and process for manufacturing the same | |
| CN100479138C (en) | Embedded metal cooling seat of semiconductor component and method of producing the same | |
| US8232119B2 (en) | Method for manufacturing heat dissipation bulk of semiconductor device | |
| US8247247B2 (en) | Method of manufacturing LED module | |
| WO2008141500A1 (en) | A circuit board for heat dispersion | |
| CN100505344C (en) | No-base light emitting diode producing method | |
| CN201887076U (en) | Combining improvement of base plate and heat dissipation structure | |
| CN201853745U (en) | High-power light emitting diode (LED) ceramic heat sink | |
| CN100495667C (en) | Method for producing cooling seat of semiconductor elements | |
| CN202930431U (en) | Vertical structure LED high voltage chip without metal electrodes | |
| CN102097562A (en) | Alternating current surface mounted type vertical structure semiconductor light-emitting diode | |
| CN202111096U (en) | AC semiconductor LED of vertical structure of surface paster type | |
| CN100533696C (en) | Method for manufacturing semiconductor element | |
| CN109524374A (en) | A kind of LED light module | |
| CN101997064B (en) | Light-emitting diode (LED) | |
| JP2013138095A (en) | Led light-emitting device | |
| CN102376865A (en) | Light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: CHI MEI LIGHTING TECHNOLOGY CORP. Free format text: FORMER OWNER: SU YANKUN Effective date: 20110420 Free format text: FORMER OWNER: CHEN GUANQUN LIN JUNLIANG HUANG JINQUAN HU SHUKAI |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: NO. 14, ALLEY 22, LANE 147, XIAODONG ROAD, EAST DISTRICT, TAINAN CITY, TAIWAN, CHINA TO: NO. 3, DITANGGANG ROAD, HSIN-SHIH DISTRICT, TAINAN CITY, 74148, TAIWAN, CHINA |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20110420 Address after: 74148, Taiwan, Tainan, China new city embankment road No. 3 Tong Patentee after: Chi Mei Lighting Technology Corp. Address before: Lane 22, Lane 147, little East Road, East District, Tainan, Taiwan, China 14 Co-patentee before: Chen Guanqun Patentee before: Su Yankun Co-patentee before: Lin Junliang Co-patentee before: Huang Jinquan Co-patentee before: Hu Shukai |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090415 Termination date: 20140930 |
|
| EXPY | Termination of patent right or utility model |