CN102376865A - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
CN102376865A
CN102376865A CN 201010262887 CN201010262887A CN102376865A CN 102376865 A CN102376865 A CN 102376865A CN 201010262887 CN201010262887 CN 201010262887 CN 201010262887 A CN201010262887 A CN 201010262887A CN 102376865 A CN102376865 A CN 102376865A
Authority
CN
China
Prior art keywords
substrate
chip
emitting diode
light
circuit layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN 201010262887
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Chinese (zh)
Inventor
赖志铭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Foxsemicon Integrated Technology Shanghai Inc
Foxsemicon Integrated Technology Inc
Original Assignee
Foxsemicon Integrated Technology Shanghai Inc
Foxsemicon Integrated Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foxsemicon Integrated Technology Shanghai Inc, Foxsemicon Integrated Technology Inc filed Critical Foxsemicon Integrated Technology Shanghai Inc
Priority to CN 201010262887 priority Critical patent/CN102376865A/en
Publication of CN102376865A publication Critical patent/CN102376865A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a light emitting diode which comprises a substrate, a chip and a packaging element, wherein the chip is arranged on the substrate; the packaging element is used for sealing the chip; the substrate is made of a non-conducting ceramic material; a circuit layer is directly formed on the substrate; and the chip is directly adhered to the substrate and is electrically connected to the circuit layer. An interface layer between the chip and the substrate is efficiently reduced; the heat generated by the chip can be released after being directly conducted to the substrate; and light-emitting efficiency and service life of the light emitting diode can be promoted.

Description

Light-emitting diode
Technical field
The present invention relates to a kind of light-emitting diode.
Background technology
Light-emitting diode (Light-emitting Diode; LED) life-span is 50～100 times that general bulb is wanted; And its power consumption is merely 1/3～1/5 of general bulb; Be expected to replace existing tungsten lamp, mercury vapor lamp, cold-cathode fluorescence lamp etc., become the new lighting source of not only energy-conservation but also environmental protection in 21st century.
Existing LED structure, be be adhered to after the led chip encapsulation printed circuit board (PCB) (PrintedCircuit Board, PCB) on, then PCB is combined with a metal substrate to distribute the heat of led chip generation.Yet in this kind LED structure, the caloric requirement that led chip produces just can be passed to substrate through PCB; The boundary layer of heat transferred is more; And the material of PCB is generally FR-4 (covered form by epoxy resin and glass fiber impregnation), and its heat-conductive characteristic is not good, so the heat that produces of led chip is difficult to conduct to substrate apace and distributes; Cause the rising of led chip temperature; Have a strong impact on luminous efficiency and the useful life thereof of LED, the heat that therefore how fast and effeciently to distribute LED and produced has become the key factor that influences LED quality and life-span.
Summary of the invention
In view of this, be necessary to provide a kind of light-emitting diode with better heat radiating effect.
A kind of light-emitting diode comprises substrate, is located at chip on the substrate, and the packaging body of the said chip of sealing that said substrate is non-conductive ceramic material, direct formation circuit layer on the substrate, and said chip directly is bonded on the substrate and with circuit layer and electrically connects.
Compared with prior art; Light-emitting diode of the present invention directly forms circuit on substrate; Chip directly is incorporated on the substrate; Effectively reduce the boundary layer between chip and the substrate, distribute, promote the luminous efficiency and the useful life of light-emitting diode thereby the heat that chip produces can be directly conducted to substrate.
Description of drawings
Combine embodiment that the present invention is described further with reference to the accompanying drawings.
Fig. 1 is the perspective view of the present invention's one preferred embodiment light-emitting diode.
Fig. 2 is the cutaway view of light-emitting diode shown in Figure 1.
Fig. 3 is the cutaway view of light-emitting diode second embodiment.
Fig. 4 is the cutaway view of light-emitting diode the 3rd embodiment.
Fig. 5 is the cutaway view of light-emitting diode the 4th embodiment.
Fig. 6 is the cutaway view of light-emitting diode the 5th embodiment.
The main element symbol description
Light-emitting diode 100,300,400,500,600
Substrate 10,310,410,510,610
End face 12,312
Storage tank 14,314
Circuit layer 16
Chip 20
Substrate 22
PN junction 24
Electrode 26
Packaging body 30,330,430,530,630
Outer surface 32,336,538
Bottom 332,432,532
Outer 334,434,536
Electrode 40
Elargol 350
Heat-conducting cream 460,560,660
Intermediate layer 534
Interface 535
Embodiment
As shown in Figure 1, first embodiment of the invention light-emitting diode 100 comprises substrate 10, is arranged on the chip 20 on the substrate 10, the packaging body 30 of sealing chip 20 and the electrode 40 that is used to connect extraneous power supply (scheming not show).
Said substrate 10 is the ceramic material of non-conductive, high heat conductance, low thermal coefficient of expansion, like silicon nitride (Si 3N 4), carborundum (SiC), zirconia (ZrO 2), boron carbide (B 4C), titanium diboride (TiB 2), the mixture of aluminium oxide (AlxOy), aluminium nitride (AlN), beryllium oxide (BeO), Sai Long (Sialon) or previous materials.
Please consult Fig. 2 simultaneously, in the present embodiment, the substrate 10 lamellar structure that is square.The middle position of the end face 12 of substrate 10 is recessed to form storage tank 14 downwards, and substrate 10 directly is formed with circuit layer 16 on the position of the bottom of corresponding storage tank 14.
Said circuit layer 16 can be nickel (Ni), gold (Au), tin (Sn), beryllium (Be), aluminium (Al), indium (In), titanium (Ti), tantalum (Ta), silver (Ag), copper metal or its alloys such as (Cu); Or transparent conductive oxide (Transparent Conductive Oxides; TCO); As indium tin metal oxide (Indium Tin Oxides, ITO), Ga-doped zinc oxide (GZO), aluminium-doped zinc oxide (AZO) etc.
The method that forms said circuit layer 16 comprises physical deposition method such as sputter (Sputter), electron-beam evaporation (E-beam Evaporation Deposition); Chemical deposition such as chemical vapour deposition (CVD) (Chemical Vapor Deposition, CVD), electroplate electrochemical deposition etc.Also can adopt fabrography with materials, printed on substrate 10, form said circuit layer 16 through super-dry, sintering, step such as radium-shine again.
In the present embodiment, said chip 20 is in the storage tank 14 that array-like is arranged at substrate 10.For reducing influencing each other between the light that chip 20 produced, the distance between the chip 20 is advisable to be not less than 500um, preferably is not less than 900um, the preferred 1000um that is not less than.The size of chip 20 with the length of side be not more than 350um, thickness is not more than 200um and is advisable, the preferred length of side is not more than 300um, thickness is not more than 150um, the preferred length of side is not more than 250um, thickness is not more than 100um.
Said chip 20 can be phosphide (Al xIn yGa (1-x-y)P, 0≤x≤1,0≤y≤1 wherein, x+y≤1) or arsenide (Al xIn yGa (1-x-y)As; 0≤x≤1,0≤y≤1 wherein, x+y≤1); Also can adopt and have the semi-conducting material that to launch the long wavelength light that is enough to excitation fluorescent material; Like various oxides such as zinc oxide (ZnO), or nitride such as gallium nitride (GaN) etc., the nitride-based semiconductor (In that can launch the short-wavelength light that is enough to excitation fluorescent material perhaps adopted xAl yGa (1-x-y)N, 0≤x≤1,0≤y≤1 wherein, x+y≤1).In the present embodiment, chip 20 is a nitride-based semiconductor, and the ultraviolet light (UV) that can launch the short-wavelength light of excitation fluorescent material is to ruddiness.
Each chip 20 comprises substrate 22, PN junction 24 and P type and N type electrode 26.In the present embodiment; Chip 20 and circuit layer 16 interleaved settings; The substrate 22 of chip 20 does not have the part of circuit layer 16 to form directly with substrate 10 to contact, and the P type of chip 20 and N type electrode 26 all are formed on the exiting surface (end face) of chip 20, and links to each other with circuit layer 16 through the mode of routing (Wire Bonding); Thereby the heat transferred and the path of current of chip 20 are separated from each other, and do not disturb mutually.
For remedying the gap between chip 20 and the substrate 10, reduce both contact heat resistances, the transmission of the heat of speed-up chip 20 is provided with one deck elargol (Agepoxy) 50 between the substrate 22 of substrate 10 and chip 20.In other embodiments, also can in the position reusable heat reflow that chip 20 is connected with substrate 10 both bondd paste solder printing, or tin ball adhesion processing procedure be bonded in chip 20 on the substrate 10.In addition, the mode of eutectic bond also capable of using (Eutectic Bonding) is bonded in the contact heat resistance that reduces on the substrate 10 between the two with chip 20, promptly first metal plated layer on chip 20 and substrate 10 respectively; Then this two metal level is toasted under specified temp through eutectic bond (Eutectic Bonding) and link to each other, the material of employed metal level can be gold (Au), tin (Sn); Indium (In), aluminium (Al), silver (Ag); Bismuth (Bi), the alloy of beryllium (Be) or aforementioned metal etc.
The substrate 22 of chip 20 is the semiconductor (Unintentionally Doped Semiconductor) of the intrinsic semiconductor (Intrinsic Semiconductor) or other impurity that painstakingly do not mix; Like spinelle, carborundum (SiC), silicon (Si), zinc oxide (ZnO), gallium nitride (GaN), GaAs (GaAs), gallium phosphide (GaP), aluminium nitride (AlN) etc.; The perhaps material of the good and poor electric conductivity of heat conductivility is like diamond etc.The thermal coefficient of expansion of substrate 22 and substrate 10 are approaching, thus substrate 10 with can heat shock resistance after chip 20 combines, allow operating temperature in a big way.The carrier concentration of substrate 22 (CarrierConcentration) is to be not more than 5 * 10 6Cm -3Be advisable, its carrier concentration is low more, and conductance is just low more, just can completely cut off the electric current of the substrate 22 of flowing through more.Preferably, the carrier concentration of substrate 22 is not more than 2 * 10 6Cm -3
Packaging body 30 coating chips 20 and circuit layer 16 are in order to isolated chip 20 and extraneous aqueous vapor.The material of packaging body 30 comprises: silicones (Silicone), epoxy resin (Epoxy Resin), low-melting glass (Low Temperature Melt Glass), polymethyl methacrylate (PolymethylMethacrylate; PMMA), (Polycarbonate PC) waits thermosetting shape light transmissive material for polymer (Polymer), Merlon.Packaging body 30 can be processed different shape such as hemisphere, dome or square etc. through the mode of ejection formation.In the present embodiment, packaging body 30 is filled in the storage tank 14 of substrate 10, and its outer surface 32 is the plane that flushes with the end face 12 of substrate 10.
In addition, for changing this chip 20 outgoing light wavelengths, can in packaging body 30, fill fluorescent material, like sulfide (Sulfide), aluminate (Aluminates), oxide (Oxides), silicate (Silicates), nitride (Nitrides) etc.
Electrode 40 is formed on the substrate 10 and is exposed to outside the packaging body 30, and an end of electrode 40 and circuit layer 16 electrically connect, and for chip 20 electric current are provided thereby the other end is used to connect extraneous power supply.The material of electrode 40 comprises: nickel (Ni); Gold (Au), tin (Sn), beryllium (Be), aluminium (Al), indium (In), titanium (Ti), tantalum (Ta), silver (Ag), copper metal or its alloys such as (Cu); Or transparent conductive oxide, like indium tin metal oxide, Ga-doped zinc oxide, aluminium-doped zinc oxide etc.
During light-emitting diode 100 work, electrode 40 links to each other to chip 20 power supplies with the positive and negative electrode of extraneous power supply (figure does not show) respectively, and the operating current that injects chip 20 is not more than 50mA, operating current density is not more than 50A/cm 2, preferred operating current is not more than 30mA, operating current density is not more than 40A/cm 2, preferred operating current is not more than 20mA, operating current density is not more than 30A/cm 2
When light-emitting diode 100 is luminous; Heat also produces thereupon; Because the chip 20 of light-emitting diode 100 of the present invention is directly to be incorporated on the substrate 10; Reduced the boundary layer between chip 20 and the substrate 10 effectively, the heat that chip 20 is produced can directly conduct to substrate 10 fast and also finally distribute via the substrate 10 of high-heat conductive efficency, has improved the radiating efficiency of light-emitting diode 100; Make chip 20 maintain the operating state of low temperature, promote the performance and the useful life of light-emitting diode 100.
As shown in Figure 3, be second embodiment of the invention light-emitting diode 300, in the present embodiment, be formed with the storage tank 314 of a plurality of separation on the substrate 310, each storage tank 314 ccontaining chip 20.Preferably, each storage tank 314 is outside flaring shape, thereby the light that chip 20 is produced reflexes to the external world.In the present embodiment; The area of storage tank 314 bottoms is greater than the area of chip 20; The substrate 22 of chip 20 is bonded in the substrate 310 through sticky material 350, forms the gap between the side of chip 20 and the substrate 310, and the end face 312 of the exiting surface of chip 20 and substrate 310 is substantially flush.The said chip 20 of packaging body 330 sealing, packaging body 330 comprise the bottom 332 in the gap that is filled in chip 20 and substrate 310 and are positioned at the skin 334 on the end face 312 of substrate 310.In the present embodiment, be distributed with fluorescent material in the skin 334, its outer surface 336 is plane.
As shown in Figure 4; Be light-emitting diode 400 the 3rd embodiment; The difference of itself and last embodiment is: in the present embodiment, be filled with the heat-conducting cream 460 of electric insulation in the substrate 22 of chip 20 and the gap between the substrate 410, increase heat conduction efficiency between chip 20 and the substrate 410.Packaging body 430 comprises PN junction 24 and the bottom 432 in the gap between the substrate 410 that is filled in chip 20 and is positioned at the skin 434 on the substrate 410.
As shown in Figure 5; Be light-emitting diode 500 the 4th embodiment, in the present embodiment, packaging body 530 comprises bottom 532 in the gap of the PN junction that is filled in chip 20 and substrate 410, is bonded in the intermediate layer 534 on the substrate 510 and is positioned at the skin 536 on the intermediate layer 534; Be filled with fluorescent material in its ectomesoderm 536; Be filled with dispersant in the intermediate layer 534, outer 536 outer surface 538 is the curved surface of evagination, and skin 536 is a plane with the interface 535 in intermediate layer 534.The heat-conducting cream 560 that is filled with electric insulation between the substrate 22 of chip 20 and the substrate 510 equally to be increasing heat conduction efficiency between the two, the distributing of the heat of speed-up chip 20.
In the previous embodiment, chip 20 is contained in the substrate 10 (310,410,510) fully, and packaging body 30 (330,430,530) is integrative-structure and coats all chips 20.Shown in Figure 6 is fifth embodiment of the invention, and different with previous embodiment is: the PN junction 24 of chip 20 protrudes in outside the substrate 610, is formed with the gap between the substrate 22 of chip 20 and the substrate 610, is filled with heat-conducting cream 660 in the gap.Packaging body 630 comprises the encapsulation monomer of a plurality of separation; Each encapsulation monomer sealing is a chip 20 wherein; Thereby the light that chip 20 produces can phase mutual interference or absorption, so the distribution of chip 20 also no longer receives the restriction of distance, effectively promotes the light emission rate of light-emitting diode 600.
Among the above embodiment, the P type of chip 20 and N type electrode 26 are formed on chip 20 same sides, and chip 20 does not have the part of circuit layer 16 directly to contact with substrate 10 (310,410,510,610).In other embodiments; The P type of chip and N type electrode also can be formed at the relative two sides of chip respectively, on end face and bottom surface, under this kind situation; The substrate of chip can adopt height to mix the semiconductor (Heavily Doped Semiconductor) of concentration; (Carrier Concentration) is high more for its carrier concentration, and conductance is good more, generally to be not less than 5 * 10 8Cm -3Be advisable, preferably be not less than 1 * 10 9Cm -3, so can let electric current flow through substrate, chip directly places on the circuit layer of substrate, is positioned at electrode on the bottom surface of chip and forms with circuit layer and is electrically connected, is positioned at the mode that electrode on the chip end face then can pass through routing and is connected with circuit layer.
Be with being appreciated that, for the person of ordinary skill of the art, can make change and the distortion that other various pictures are answered by technical conceive according to the present invention, and all these change the protection range that all should belong to claim of the present invention with distortion.

Claims (10)

1. light-emitting diode; Comprise substrate, be located at chip on the substrate, and the packaging body of the said chip of sealing; It is characterized in that: said substrate is non-conductive ceramic material, directly forms circuit layer on the substrate, and said chip directly is bonded on the substrate and with circuit layer and electrically connects.
2. light-emitting diode as claimed in claim 1 is characterized in that: the material of said substrate is silicon nitride, carborundum, zirconia, boron carbide, titanium diboride, aluminium oxide, aluminium nitride, and beryllium oxide or match are grand.
3. light-emitting diode as claimed in claim 1 is characterized in that: said chip and circuit layer are the setting of staggering, and the electrode of chip all is formed on the exiting surface of chip, and are connected with circuit layer through routing.
4. light-emitting diode as claimed in claim 1; It is characterized in that: the electrode of said chip is formed at respectively on the relative two sides of chip; Chip directly places on the circuit layer of substrate; Chip directly links to each other with circuit layer with a electrode on the side that substrate links to each other, and another electrode of chip is connected with circuit layer through routing.
5. light-emitting diode as claimed in claim 1 is characterized in that: said substrate is provided with accepting groove, and said chip is contained in the accepting groove, and said packaging body is filled in the accepting groove, the outer surface coplane of the outer surface of packaging body and substrate.
6. light-emitting diode as claimed in claim 1; It is characterized in that: said substrate is provided with some accepting grooves, and each accepting groove is accommodated a chip, and the size of said accepting groove is greater than the size of chip; Said chip comprises substrate and is formed at the PN junction on the substrate; Said substrate is positioned at accepting groove, forms the gap between substrate and the substrate, is filled with the heat-conducting cream of electric insulation in the said gap.
7. light-emitting diode as claimed in claim 6 is characterized in that: said PN junction protrudes in outside the substrate.
8. light-emitting diode as claimed in claim 6; It is characterized in that: said PN junction is positioned at storage tank and forms the gap with substrate; Said packaging body comprises and is filled in the bottom between PN junction and the substrate and is formed at the outer skin of substrate, is distributed with fluorescent material in the said skin.
9. light-emitting diode as claimed in claim 7 is characterized in that: said packaging body also comprises the intermediate layer that is formed between bottom and the skin, is distributed with dispersant in the said intermediate layer.
10. light-emitting diode as claimed in claim 1 is characterized in that: comprise also being formed on the substrate and being exposed to two electrodes outside the packaging body that one end of electrode is connected with circuit layer, the other end is used to connect extraneous power supply.
CN 201010262887 2010-08-25 2010-08-25 Light emitting diode Pending CN102376865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201010262887 CN102376865A (en) 2010-08-25 2010-08-25 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201010262887 CN102376865A (en) 2010-08-25 2010-08-25 Light emitting diode

Publications (1)

Publication Number Publication Date
CN102376865A true CN102376865A (en) 2012-03-14

Family

ID=45795145

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201010262887 Pending CN102376865A (en) 2010-08-25 2010-08-25 Light emitting diode

Country Status (1)

Country Link
CN (1) CN102376865A (en)

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Application publication date: 20120314