CN100477512C - Method for manufacturing and mounting crystal resonator in voltage controlled crystal oscillator - Google Patents
Method for manufacturing and mounting crystal resonator in voltage controlled crystal oscillator Download PDFInfo
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- CN100477512C CN100477512C CNB2004100658775A CN200410065877A CN100477512C CN 100477512 C CN100477512 C CN 100477512C CN B2004100658775 A CNB2004100658775 A CN B2004100658775A CN 200410065877 A CN200410065877 A CN 200410065877A CN 100477512 C CN100477512 C CN 100477512C
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Abstract
A manufacturing and assembling method for crystal resonators in voltage-controlled crystal oscillators includes the following steps: a, cutting and grinding a basic frequency quartz crystal to plates, b, coating double faces of the plate with silver, in the thickness proportion of 1:1.05-5, c, welding the coated crystal plates with electrodes of different sectional areas, the small electrode is connected with thin layer coating and the large with the thick, the ratio of the sectional areas of two electrodes is 1:1.05~3, and the crystal plates connected with the electrodes are installed on the frame crystal resonator, d, soldering the leading pins of the resonator to the CB of a voltage-controlled oscillator.
Description
Technical field
The present invention relates to a kind of manufacturing installation method of electronic devices and components, manufacturing, the installation method of the crystal resonator of one of critical component in specifically a kind of VCXO.
Background technology
Voltage controlled crystal oscillator (hereinafter to be referred as VCXO) is a kind of crystal oscillator that occurs in recent years, is characterized in: therefore its frequency can be called VCXO (VCXO) according to added voltage or signal change.Do simple introduction with regard to the basic circuit of VCXO below.
Fig. 1 is a kind of basic circuit of VCXO.Because C1, C2 are bigger, so the load capacitance of crystal oscillator just equals the junction capacitance of variable capacitance diode basically, when modulation voltage Em adds fashionablely, the frequency of oscillation of VCXO just changes according to Em.
Because the junction capacitance of variable capacitance diode and the pass of bias voltage are:
C＝K/(E+Φ)
n
Can not be too little to the bias voltage E that is added on the variable capacitance diode because contact potential Φ is about 0.7 volt in the formula, temperature influence will be very big, E too hour, variable capacitance diode junction capacitance temperature influence is especially big; On the other hand, bigger high-frequency oscillation voltage is arranged on the variable capacitance diode, E too hour, the variable capacitance diode junction capacitance will not exclusively change and change according to modulation voltage Em, this will influence the linear relationship between frequency of oscillation f and modulation voltage Em.
According to theory and practice, the frequency deviation of this VCXO is: Δ f≤0.15fs/2r, in the formula, fs is the series resonance frequency of quartz resonator, r=C
0/ C
1(capacity ratio of quartz resonator).Cut quartz resonator for AT, r is about 250n
2, n is the overtone number of times.Therefore the most suitable VCXO that is of fundamental frequency quartz resonator does not as can be seen generally adopt the overtone quartz resonator.
VCXO is mainly used on the DVB, and the design of DVB is produced by Korea S, Taiwan to domestic transfer.But because DVB is bigger with VCXO (VCXO) technical difficulty, what particularly crystal resonator wherein generally adopted at present is manufacturing, the installation method that once encapsulates and wait electrode, it directly is placed on wafer on the spring coil of wiring board, add that a series of reasons such as plated film is unreasonable cause it to exist voltage controlled frequency overproof serious, consistency and poor stability, percent defective height, can't produce in enormous quantities, be difficult to satisfy growing demand.
Summary of the invention
The objective of the invention is the problem that exists at prior art, provided a kind of both being suitable for to produce in batches, can guarantee that the every performance index of crystal resonator satisfy manufacturing, the installation method of crystal resonator in the VCXO of instructions for use simultaneously again.
Technical scheme of the present invention is:
The manufacturing of crystal resonator, installation method in a kind of VCXO is characterized in that may further comprise the steps:
A, the fundamental frequency quartz crystal handled through cutting, grinding, burn into obtain required quartz crystal slice;
B, relative two of the above-mentioned quartz crystal slice of handling well are carried out silver-plated processing respectively, and make two electrodeposited coating thickness be 1: 1.05～5 proportionate relationship, what electrodeposited coating was thin is small electrode, and what electroplate bed thickness is large electrode.Small electrode is 1: 1.05～3 with the ratio of large electrode sectional area;
C, the above-mentioned quartz crystal slice that is coated with large and small electrode is loaded onto support be encapsulated in the metal shell and promptly get crystal resonator;
D, the support pin of above-mentioned crystal resonator directly is welded on the VCXO wiring board.
For DVB, the frequency of crystal resonator is 27MHz in the VCXO commonly used, and its manufacturing, installation method are:
A, the cutting of fundamental frequency quartz crystal, grinding, burn into handled obtain required quartz crystal slice;
B, relative two of the above-mentioned quartz crystal slice of handling well are carried out silver-plated (promptly producing electrode) respectively and handle, and make two electrodeposited coating thickness be 1: 1.2～2 proportionate relationship, the electrodeposited coating of small electrode is thin, the plating bed thickness of large electrode.Small electrode is 1: 1.1～1.5 with the ratio of large electrode sectional area;
C, the above-mentioned quartz crystal slice that is coated with large and small electrode is loaded onto support be encapsulated in the metal shell and promptly get crystal resonator;
E, the support pin of above-mentioned crystal resonator directly is welded on the VCXO wiring board.
Also can take following technical measures in the manufacturing of crystal resonator, the installation method in the 27MHz VCXO: the thickness of plating layer ratio that described quartz crystal slice is relative two is 1: 1.5.Described small electrode is 1: 1.25 with the ratio of large electrode sectional area.
When quartz crystal slice is encapsulated, the quartz crystal slice that is coated with large and small electrode at first can be placed on the support, seal up metal shell then, obtain the crystal resonator of secondary encapsulation.
Beneficial effect of the present invention:
1, the wafer on the voltage-controlled crystal (oscillator) made from the inventive method vibrates is exposed outside, has significantly reduced environmental change and aging influence to crystal oscillator.
2, the pin with crystal resonator directly is welded on the wiring board, has increased reliability, has reduced because of vibrating the come off possibility of no-output of acute fragmentation that causes wafer or pin.
3, in process of production, wafer is contained on the support, produces more controlledly, can improve the consistency of crystal oscillator voltage controlled frequency scope greatly.
4, crystal resonator is convenient to carry out burn-in test, can 100% picks out the oscillator of high-quality, also can improve the consistency of crystal oscillator voltage-frequency scope.
5, simple for process, need not to increase complicated process equipment can realize.
Description of drawings
Fig. 1 is the electrical schematic diagram of the related VCXO of the present invention.
Fig. 2 is the crystal resonator frequency waveform schematic diagram of the embodiment of the invention one.
Embodiment
The present invention is further illustrated below in conjunction with drawings and Examples.
Embodiment one.
As shown in Figure 1, 2.
With the crystal oscillator in the commonly used 27MHz VCXO (VCXO) of DVB is that the present invention is further illustrated for example.
27MHz VCXO (VCXO) is that present DVB goes up one of widely used control assembly, and its electrical schematic diagram as shown in Figure 1.Its major technique technical indicator is:
Nominal frequency: 27MHz
Frequency stability: ± 25ppm
Operating temperature range :-10 ℃-+60 ℃
Input voltage :+3.3V
DC± 5%
Control reference voltage: 1.65 ± 1.35V
DC
Frequency difference scope: ± 70-90ppm
Linear: ± 20%
Output level: HCMOS/TTL
0 level: 0.3V
DCMax
1 level: 3.0V
DCMin
Duty ratio: 40/60%@1.65V
DC
Rising, fall time: 8.0nS max
Output capacitance: 15pF
Its main difficult point is the realization of voltage controlled frequency scope, the manufacturing of crystal resonator and installation just, and it requires to be ± 70-90ppm (1.65 ± 1.35VDC), and domestic present VCXO product all is only to consider lower limit and do not consider more easily to reach the upper limit.And require voltage-controlled scope at ± 70-90ppm, particularly crystal and varactor have the consistency of height just to require element.
For well realize and control voltage controlled frequency scope (± 70-90ppm) present embodiment is that crystal resonator has adopted following manufacturing and installation method to wherein key element:
A, the cutting of fundamental frequency quartz crystal, grinding, burn into handled obtain quartz crystal slice;
B, relative two of the above-mentioned quartz crystal slice of handling well are carried out silver-plated (promptly producing electrode) respectively and handle, and make two electrodeposited coating thickness be 1: 1.5 proportionate relationship, the electrodeposited coating of small electrode is thin, the plating bed thickness of large electrode.Small electrode is 1: 1.25 proportionate relationship with the ratio of large electrode sectional area;
C, the above-mentioned quartz crystal slice that is coated with large and small electrode is loaded onto support (crystal with) be encapsulated in the metal shell and promptly get crystal resonator;
E, the support pin of above-mentioned crystal resonator directly is welded on the VCXO wiring board, can makes 27MHz VCXO (VCXO), the manufacture method of other parts is same as the prior art.
Embodiment two.
The manufacturing installation method of crystal oscillator in the 27MHz VCXO.Two electrodeposited coating thickness are 1: 1.2 proportionate relationship in the present embodiment, and small electrode is 1: 1.1 proportionate relationship with the ratio of large electrode sectional area, and other is identical with embodiment one.
Embodiment three.
The manufacturing installation method of crystal oscillator in the 27MHz VCXO.Two electrodeposited coating thickness is 1: 2 proportionate relationship in the present embodiment, and small electrode is 1: 1.5 proportionate relationship with the ratio of large electrode sectional area, and other is identical with embodiment one.
During concrete enforcement, two electrodeposited coating thickness can be selected between 1: 1.2～2, and the ratio of small electrode and large electrode sectional area can be selected between 1: 1.1～1.5.
Among the embodiment one, two, three, adopt the secondary packaged type to realize the consistency of voltage controlled frequency scope and the high stability of crystal oscillator, below this be further described:
One, because the crystal oscillator mode taking once to encapsulate is directly wafer to be placed on the spring coil of wiring board, so wafer can't obtain fine control in process of production, can't carrying out 100%, to select be the immediate cause that causes crystal oscillator voltage controlled frequency scope consistency difference.
Two, the variation of environment and aging be another major reason that causes crystal oscillator voltage controlled frequency consistency difference.Directly wafer is contained on the wiring board of VCXO,, at high temperature evaporate into and cause wafer property to change on the wafer because of the rosin that stays of welding on the wiring board etc.
Three, the defective of chip design itself causes the non-optimum Match of wafer and circuit, is the another reason of crystal oscillator voltage controlled frequency scope consistency difference.
The main cause of crystal oscillator no-output is:
One, adopt the once mode of encapsulation, wafer can't be tested before loading onto wiring board fully, and the Q value is lower like this, the harsh wafer of starting condition for oscillation can not just pick out again before, loading onto on the wiring board back because of the variation of external environment and aging, causing can't starting of oscillation, and non-output signal.
Two, once encapsulation very easily causes coming off between chip electrode and spring coil, causes no-output.
Three, once the crystal oscillator of encapsulation because of vibrating play, causes damage to wafers or fragmentation in transportation, also can make the crystal oscillator no-output.
The serious overproof reason of crystal oscillator frequency has:
As shown in Figure 2, the top among the figure is at the main peak that shakes, and other crest is in a pair ripple, and crystal oscillator works in the main peak that shakes, and when pair ripple and the main peak that shakes are almost strong, then is easy to shake to pair ripple, and just frequency is seriously overproof.And cause that the main peak that the shakes reason similar strong with paying ripple has:
1, the wafer depth of parallelism is bad.
2, the plated film silver layer is blocked up.
3, the frequency modulation amount is too much, asymmetric.
Based on above analysis, present embodiment has adopted the mode of secondary encapsulation, just earlier on the wafer on the support (can adopt the general support of crystal oscillator manufacturing), seal up metal shell and make crystal resonator.
Subordinate list is a test data of utilizing 50 VCXOs (VCXO) of method production of the present invention.
Subordinate list
27MHz VCXO test data
| Sequence number | 0.3V | 1.65V | 3V | 0.3V(ppm) | 1.65V(ppm) | 3V(ppm) |
| 1 | 26.99758 | 26.99995 | 27.00229 | -87.8 | -1.9 | 86.7 |
| 2 | 26.99754 | 26.99987 | 27.00216 | -86.3 | -4.8 | 84.8 |
| 3 | 26.99760 | 26.99991 | 27.00222 | -85.6 | -3.3 | 85.6 |
| 4 | 26.99774 | 27.00004 | 27.00235 | -85.2 | 1.5 | 85.6 |
| 5 | 26.99758 | 26.99987 | 27.00219 | -84.8 | -4.8 | 85.9 |
| 6 | 26.99783 | 27.00002 | 27.00217 | -81.1 | 0.7 | 79.6 |
| 7 | 26.99754 | 26.99986 | 27.00213 | -85.9 | -5.2 | 84.1 |
| 8 | 26.99758 | 26.99990 | 27.00222 | -85.9 | -3.7 | 85.9 |
| 9 | 26.99776 | 27.00007 | 27.00235 | -85.6 | 2.6 | 84.4 |
| 10 | 26.99773 | 26.99990 | 27.00217 | -80.4 | -3.7 | 84.1 |
| 11 | 26.99780 | 27.00009 | 27.00227 | -84.8 | 3.3 | 80.7 |
| 12 | 26.99774 | 27.00006 | 27.00229 | -85.9 | 2.2 | 82.6 |
| 13 | 26.99769 | 26.99990 | 27.00204 | -81.9 | -3.7 | 79.3 |
| 14 | 26.99755 | 26.99989 | 27.00211 | -86.7 | -4.1 | 82.2 |
| 15 | 26.99765 | 26.99993 | 27.00230 | -84.4 | -2.6 | 87.8 |
| 16 | 26.99782 | 27.00002 | 27.00218 | -81.5 | 0.7 | 80.0 |
| 17 | 26.99758 | 26.99992 | 27.00215 | -86.7 | -3.0 | 82.6 |
| 18 | 26.99776 | 27.00009 | 27.00224 | -86.3 | 3.3 | 79.6 |
| 19 | 26.99772 | 26.99993 | 27.00213 | -81.9 | -2.6 | 81.5 |
| 20 | 26.99776 | 27.00005 | 27.00238 | -84.8 | 1.9 | 86.3 |
| 21 | 26.99771 | 27.00005 | 27.00228 | -86.7 | 1.9 | 82.6 |
| 22 | 26.99766 | 26.99995 | 27.00218 | -84.8 | -1.9 | 82.6 |
| 23 | 26.99784 | 27.00004 | 27.00216 | -81.5 | 1.5 | 78.5 |
| 24 | 26.99773 | 27.00008 | 27.00223 | -87.0 | 3.0 | 79.6 |
| 25 | 26.99760 | 26.99989 | 27.00211 | -84.8 | -4.1 | 82.2 |
| 26 | 26.99774 | 27.00006 | 27.00236 | -85.9 | 2.2 | 85.2 |
| 27 | 26.99774 | 26.99995 | 27.00219 | -81.9 | -1.9 | 83.0 |
| 28 | 26.99798 | 27.00010 | 27.00223 | -78.5 | 3.7 | 78.9 |
| 29 | 26.99774 | 27.00006 | 27.00223 | -85.9 | 2.2 | 80.4 |
| 30 | 26.99751 | 26.99988 | 27.00218 | -87.8 | -4.4 | 85.2 |
| 31 | 26.99778 | 26.99994 | 27.00212 | -80.0 | -2.2 | 80.7 |
| 32 | 26.99790 | 27.00010 | 27.00235 | -81.5 | 3.7 | 83.3 |
| 33 | 26.99760 | 26.99989 | 27.00204 | -84.8 | -4.1 | 79.6 |
| 34 | 26.99770 | 26.99995 | 27.00227 | -83.3 | -1.9 | 85.9 |
| 35 | 26.99773 | 27.00008 | 27.00225 | -87.0 | 3.0 | 80.4 |
| 36 | 26.99755 | 26.99993 | 27.00223 | -88.1 | -2.6 | 85.2 |
| 37 | 26.99776 | 27.00007 | 27.00233 | -85.6 | 2.6 | 83.7 |
| 38 | 26.99751 | 26.99987 | 27.00216 | -87.4 | -4.8 | 84.8 |
| 39 | 26.99779 | 27.00010 | 27.00244 | -85.6 | 3.7 | 86.7 |
| 40 | 26.99760 | 26.99994 | 27.00226 | -86.7 | -2.2 | 85.9 |
| 41 | 26.99777 | 27.00002 | 27.00229 | -83.3 | 0.7 | 84.1 |
| 42 | 26.99759 | 26.99991 | 27.00218 | -85.9 | -3.3 | 84.1 |
| 43 | 26.99781 | 27.00003 | 27.00226 | -82.2 | 1.1 | 82.6 |
| 44 | 26.99769 | 26.99991 | 27.00225 | -82.2 | -3.3 | 86.7 |
| 45 | 26.99773 | 27.00004 | 27.00227 | -85.6 | 1.5 | 82.6 |
| 46 | 26.99758 | 26.99992 | 27.00211 | -86.7 | -3.0 | 81.1 |
| 47 | 26.99783 | 27.00007 | 27.00222 | -83.0 | 2.6 | 79.6 |
| 48 | 26.99764 | 26.99991 | 27.00203 | -84.1 | -3.3 | 78.5 |
| 49 | 26.99755 | 26.99990 | 27.00214 | -87.0 | -3.7 | 83.0 |
| 50 | 26.99784 | 27.00013 | 27.00229 | -84.8 | 4.8 | 80.0 |
Embodiment four.
The manufacturing installation method of crystal oscillator is in the 23MHz VCXO:
A, the fundamental frequency quartz crystal handled through cutting, grinding, burn into obtain required quartz crystal slice;
B, relative two of the above-mentioned quartz crystal slice of handling well are carried out silver-plated processing respectively, and make two electrodeposited coating thickness be 1: 1.05～1.1 proportionate relationship, what electrodeposited coating was thin is small electrode, and what electroplate bed thickness is large electrode.Small electrode is 1: 1.05～1.08 with the ratio of large electrode sectional area;
C, the above-mentioned quartz crystal slice that is coated with large and small electrode is loaded onto support be encapsulated in the metal shell and promptly get crystal resonator;
D, the support pin of above-mentioned crystal resonator directly is welded on the VCXO wiring board.
Embodiment five.
The manufacturing installation method of crystal oscillator is in the 25MHz VCXO:
A, the fundamental frequency quartz crystal handled through cutting, grinding, burn into obtain required quartz crystal slice;
B, relative two of the above-mentioned quartz crystal slice of handling well are carried out silver-plated processing respectively, and make two electrodeposited coating thickness be 1: 1.11～1.19 proportionate relationship, what electrodeposited coating was thin is small electrode, and what electroplate bed thickness is large electrode.Small electrode is 1: 1.08～1.09 with the ratio of large electrode sectional area;
C, the above-mentioned quartz crystal slice that is coated with large and small electrode is loaded onto support be encapsulated in the metal shell and promptly get crystal resonator;
D, the support pin of above-mentioned crystal resonator directly is welded on the VCXO wiring board.
Embodiment six.
The manufacturing installation method of crystal oscillator is in the 30MHz VCXO:
A, the fundamental frequency quartz crystal handled through cutting, grinding, burn into obtain required quartz crystal slice;
B, relative two of the above-mentioned quartz crystal slice of handling well are carried out silver-plated processing respectively, and make two electrodeposited coating thickness be 1: 2.1～3.5 proportionate relationship, what electrodeposited coating was thin is small electrode, and what electroplate bed thickness is large electrode.Small electrode is 1: 1.51～2 with the ratio of large electrode sectional area;
C, the above-mentioned quartz crystal slice that is coated with large and small electrode is loaded onto support be encapsulated in the metal shell and promptly get crystal resonator;
D, the support pin of above-mentioned crystal resonator directly is welded on the VCXO wiring board.
Embodiment seven.
The manufacturing installation method of crystal oscillator is in the above VCXO of 30MHz:
A, the fundamental frequency quartz crystal handled through cutting, grinding, burn into obtain required quartz crystal slice;
B, relative two of the above-mentioned quartz crystal slice of handling well are carried out silver-plated processing respectively, and make two electrodeposited coating thickness be 1: 3.6～5 proportionate relationship, what electrodeposited coating was thin is small electrode, and what electroplate bed thickness is large electrode.Small electrode is 1: 2.1～3 with the ratio of large electrode sectional area;
C, the above-mentioned quartz crystal slice that is coated with large and small electrode is loaded onto support be encapsulated in the metal shell and promptly get crystal resonator;
D, the support pin of above-mentioned crystal resonator directly is welded on the VCXO wiring board.
Claims (4)
1, manufacturing, the installation method of crystal resonator in a kind of VCXO is characterized in that may further comprise the steps:
A, the fundamental frequency quartz crystal handled through cutting, grinding, burn into obtain required quartz crystal slice;
B, relative two of the above-mentioned quartz crystal slice of handling well are carried out silver-plated processing respectively, and make two electrodeposited coating thickness be 1: 1.05～5 proportionate relationship, what electrodeposited coating was thin is small electrode, and what electroplate bed thickness is large electrode; Small electrode is 1: 1.05～3 with the ratio of large electrode sectional area;
C, the above-mentioned quartz crystal slice that is coated with large and small electrode is loaded onto support be encapsulated in the metal shell and promptly get crystal resonator;
D, the support pin of above-mentioned crystal resonator directly is welded on the VCXO wiring board.
2, manufacturing, the installation method of crystal resonator in the VCXO according to claim 1 is characterized in that the manufacturing of crystal resonator in the 27MHz VCXO, installation method are:
A, the fundamental frequency quartz crystal handled through cutting, grinding, burn into obtain required quartz crystal slice;
B, relative two of the above-mentioned quartz crystal slice of handling well are carried out silver-plated processing respectively, and make two electrodeposited coating thickness be 1: 1.2～2 proportionate relationship, what electrodeposited coating was thin is small electrode, and what electroplate bed thickness is large electrode; Small electrode is 1: 1.1～1.5 with the ratio of large electrode sectional area;
C, the above-mentioned quartz crystal slice that is coated with large and small electrode is loaded onto support be encapsulated in the metal shell and promptly get crystal resonator;
D, the support pin of above-mentioned crystal resonator directly is welded on the VCXO wiring board.
3, manufacturing, the installation method of crystal resonator in the VCXO according to claim 2 is characterized in that relative two the thickness of plating layer ratio of described quartz crystal slice is 1: 1.5.
4, manufacturing, the installation method of crystal resonator in the VCXO according to claim 2 is characterized in that the described small electrode and the ratio of large electrode sectional area are 1: 1.25.
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| CN102064782B (en) * | 2010-11-16 | 2014-03-05 | 深圳市晶峰晶体科技有限公司 | Preparation method of very-low-frequency high-temperature resistant special quartz crystal resonator |
| JP5782724B2 (en) * | 2011-01-28 | 2015-09-24 | 日本電波工業株式会社 | Oscillator |
| CN102366853B (en) * | 2011-09-22 | 2013-06-05 | 武汉昊昱微电子股份有限公司 | Welding method |
| CN105322905A (en) * | 2014-05-30 | 2016-02-10 | 珠海东精大电子科技有限公司 | Method for preparing high-frequency 49S quartz crystal resonator |
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Non-Patent Citations (3)
| Title |
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| . . |
| 石英晶体谐振器生产工艺流程综述. 林勇，陈桦.电讯技术，第37卷第3期. 1997 |
| 石英晶体谐振器生产工艺流程综述. 林勇，陈桦.电讯技术，第37卷第3期. 1997 * |
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