CN111740722A - Filter and radio frequency communication device - Google Patents

Filter and radio frequency communication device Download PDF

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Publication number
CN111740722A
CN111740722A CN202010780053.5A CN202010780053A CN111740722A CN 111740722 A CN111740722 A CN 111740722A CN 202010780053 A CN202010780053 A CN 202010780053A CN 111740722 A CN111740722 A CN 111740722A
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CN
China
Prior art keywords
filter
substrate
integrated
chip
acoustic wave
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CN202010780053.5A
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Chinese (zh)
Inventor
左成杰
何成功
王晓东
何军
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Anhui Annuqi Technology Co Ltd
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Anhui Annuqi Technology Co Ltd
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Priority to CN202010780053.5A priority Critical patent/CN111740722A/en
Publication of CN111740722A publication Critical patent/CN111740722A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

The application provides a filter and radio frequency communication equipment, relates to the technical field of wireless communication. In the present application, a filter includes: an inductive structure comprising at least one inductive element; a capacitive structure comprising at least one integrated capacitive chip; an acoustic wave resonant structure comprising at least one integrated acoustic wave resonant chip; the substrate structure, the inductance structure, the capacitance structure and the sound wave resonance structure are packaged into a whole, and at least part of the structure included by the inductance structure is positioned in the substrate structure. And the at least one inductance element, the at least one integrated capacitor chip and the at least one integrated acoustic wave resonance chip are electrically connected to form a filter circuit. Through the arrangement, the problem that the size of a filter structure is large due to low integration level in the existing device integration technology can be solved.

Description

Filter and radio frequency communication device
Technical Field
The application relates to the technical field of wireless communication, in particular to a filter and radio frequency communication equipment.
Background
In the field of wireless communication technology, the performance of radio frequency communication equipment directly affects the quality of wireless communication. In the radio frequency communication device, in order to effectively process a received signal and a signal to be transmitted, a corresponding filtering structure needs to be set.
The inventor researches and finds that in the existing filter structure, the problem that the size of the filter structure is large due to low integration level of the filter structure exists, and the application range of the filter structure is limited.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a filter and a radio frequency communication device, so as to solve the problem of a large size of a filter structure due to a low integration level in the conventional device integration technology, thereby widening the application range of the filter structure.
In order to achieve the above purpose, the embodiment of the present application adopts the following technical solutions:
a filter, comprising:
an inductive structure comprising at least one inductive element;
a capacitive structure comprising at least one integrated capacitive chip;
an acoustic wave resonant structure comprising at least one integrated acoustic wave resonant chip;
the substrate structure, the inductance structure, the capacitance structure and the acoustic wave resonance structure are packaged into a whole, and at least part of the structure included by the inductance structure is positioned in the substrate structure;
the at least one inductance element, the at least one integrated capacitor chip and the at least one integrated sound wave resonance chip are electrically connected to form a filter circuit.
In a preferred option of the embodiment of the present application, in the filter, each of the integrated capacitor chips includes:
a first substrate;
the capacitive element comprises a first conductive layer, a first dielectric layer and a second conductive layer, wherein the first conductive layer is positioned on one surface of the first substrate, the first dielectric layer is positioned on one surface of the first conductive layer far away from the first substrate, and the second conductive layer is positioned on one surface of the first dielectric layer far away from the first conductive layer.
In a preferred option of the embodiment of the present application, in the above-mentioned filter, at least a part of the chip structure included in at least one of the integrated capacitor chips is located inside the substrate structure.
In a preferred option of the embodiment of the present application, in the above-mentioned filter, the capacitor structure further includes at least one plate capacitor, and each plate capacitor includes:
two conductive layers arranged at intervals;
the second dielectric layer is positioned between the two conductive layers;
and at least part of the layered structure included by the conducting layer and the second dielectric layer is positioned in the substrate structure.
In a preferred option of the embodiment of the present application, in the above filter, each of the integrated acoustic wave resonator chips includes:
a second substrate;
at least one acoustic wave resonator integrated with the second substrate.
In a preferred option of the embodiment of the present application, in the above-mentioned filter, at least one of the integrated acoustic wave resonator chips includes at least a part of a chip structure located inside the substrate structure.
In a preferred option of the embodiment of the present application, in the filter, each of the integrated capacitor chips includes a first substrate and at least one capacitor element integrated on the first substrate;
the first substrate of at least one integrated capacitor chip and the second substrate of at least one integrated acoustic wave resonance chip belong to different areas of the same substrate, so that the at least one integrated capacitor chip and the at least one integrated acoustic wave resonance chip belong to the same integrated chip.
In a preferred option of the embodiment of the present application, in the above filter, the inductance structure includes at least one spiral inductance;
wherein each spiral inductor is at least partially located inside the substrate structure.
In a preferred option of the embodiment of the present application, in the above filter, the inductance structure includes at least one planar inductance;
wherein each of the planar inductors is at least partially located inside the substrate structure.
On the basis, an embodiment of the present application further provides a radio frequency communication device, including:
a first filter device for processing the received radio frequency signal;
the second filter device is used for processing the radio frequency signal to be transmitted;
at least one of the first filter device and the second filter device is the filter.
The application provides a filter and radio frequency communication equipment, through on encapsulating substrate structure and inductance structure, electric capacity structure and acoustic wave resonance structure in integrative basis, set up the at least partial structure that this inductance structure includes in the inside of this substrate structure, thereby improve the integrated level of the filter that forms, make the size of this filter can reduce effectively, so, can improve and have the great problem of size of filter structure because the integrated level is lower among the current device integration technology, and then widen the range of application of filter structure, for example, the volume is the smaller can be convenient for set up in various application environment, make its practical value high, can be by extensive application.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1 is a block diagram of a radio frequency communication device according to an embodiment of the present disclosure.
Fig. 2 is a schematic circuit diagram of a radio frequency communication device according to an embodiment of the present application.
Fig. 3 is a schematic structural diagram of a filter according to an embodiment of the present application.
Fig. 4 is a schematic diagram illustrating a positional relationship between a spiral inductor and a substrate structure according to an embodiment of the present disclosure.
Fig. 5 is a schematic structural diagram of an integrated capacitor chip according to an embodiment of the present application.
Fig. 6 is a schematic structural diagram of a plate capacitor according to an embodiment of the present application.
Fig. 7 is a schematic structural diagram of an integrated acoustic wave resonator chip according to an embodiment of the present application.
Fig. 8 is a schematic structural diagram of a first filter according to an embodiment of the present application.
Fig. 9 is a schematic structural diagram of a second filter according to an embodiment of the present application.
Fig. 10 is a schematic structural diagram of a third filter according to an embodiment of the present application.
Fig. 11 is a schematic structural diagram of a fourth filter provided in the embodiment of the present application.
Fig. 12 is a schematic diagram of a position relationship of an element disposed inside a substrate structure according to an embodiment of the present application.
Icon: 10-a radio frequency communication device; 12-a first filter device; 14-a second filter device; 100-a filter; 110-an inductor structure; 120-a capacitive structure; 130-an acoustic wave resonant structure; 140-substrate structure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
As shown in fig. 1, the present embodiment provides a radio frequency communication device 10. The radio frequency communication device 10 may include a first filter device 12 and a second filter device 14, among other things.
In detail, the first filter device 12 may be configured to process a radio frequency signal received by the radio frequency communication device 10, and the second filter device 14 may be configured to process a radio frequency signal to be sent by the radio frequency communication device 10.
Optionally, the specific arrangement of the first filter device 12 and the second filter device 14 is not limited, and may be selected according to the actual application requirements.
For example, in an alternative example, in conjunction with fig. 2, in order to realize efficient processing of radio frequency signals, the first filter device 12 and the second filter device 14 may be respectively multiple to form multiple filter banks (one filter bank may also be referred to as one duplexer). Wherein each filter bank may include a first filter device 12 and a second filter device 14 to form a filter path (including transmit and receive) for one of the radio frequency signals.
It should be noted that, in order to achieve effective receiving and transmitting of radio frequency signals, the radio frequency communication device 10 may further include an antenna, a radio frequency switch, a power amplifier, and the like. In this way, the radio frequency switch may be connected to the antenna, the first filter device 12 and the second filter device 14, respectively, and the first filter device 12 and the second filter device 14 may also be connected to the power amplifier (a specific connection relationship, which is not limited in this embodiment).
As such, for a received radio frequency signal, the radio frequency signal may pass through the antenna, the radio frequency switch, the first filter device 12, and the power amplifier in sequence. For the radio frequency signal to be transmitted, the radio frequency signal may pass through a power amplifier, a second filter device 14, a radio frequency switch and an antenna in sequence.
With reference to fig. 3, the present embodiment further provides a filter 100, which can be applied to the radio frequency communication device 10. That is, at least one of the first filter device 12 and the second filter device 14 included in the radio frequency communication apparatus 10 may be the filter 100.
For example, in an alternative example, the first filter device 12 described above may be the filter 100. For another example, in another alternative example, the second filter device 14 described above may be the filter 100. As another example, in another alternative example, both the first filter device 12 and the second filter device 14 described above may be the filter 100.
The filter 100 may include an inductance structure 110, a capacitance structure 120, an acoustic wave resonance structure 130, and a substrate structure 140, among others. Also, the inductive structure 110 may include at least one inductive element. The capacitive structure 120 may include at least one capacitive element. The acoustic wave resonant structure 130 can include at least one acoustic wave resonator. The substrate structure 140 may be integrally packaged with the inductive structure 110, the capacitive structure 120, and the acoustic wave resonator structure 130.
In detail, at least a portion of the inductive structure 110 may be located inside the substrate structure 140. The at least one inductive element, the at least one capacitive element, and the at least one acoustic wave resonator may be electrically connected to form a filter circuit.
Based on this, on the basis that the substrate structure 140, the inductance structure 110, the capacitance structure 120 and the acoustic wave resonance structure 130 are packaged into a whole, at least a part of the structure included in the inductance structure 110 is disposed inside the substrate structure 140, so as to improve the integration level of the formed filter 100, so that the size of the filter 100 can be effectively reduced, and the problem that the size of the filter structure is larger due to the lower integration level in the existing device integration technology is solved.
In the first aspect, it should be noted that, for the inductance structure 110, a specific number of inductance elements included in the inductance structure 110 is not limited, and may be selected according to a practical application requirement.
For example, in an alternative example, the inductive structure 110 may include an inductive element. For another example, in another alternative example, the inductance structure 110 may include a plurality of inductance elements (the connection relationship between the plurality of inductance elements is not particularly limited, and may be selected according to the actual application requirement, such as a series connection, a parallel connection, or may not be directly connected, such as connected with other elements, etc.).
The specific type of the inductance element included in the inductance structure 110 is also not limited, and may be selected according to the actual application requirement.
For example, in an alternative example, the inductive element included in the inductive structure 110 may be a spiral inductor. That is, the inductance element may be formed by a conductive wire (e.g., a wire) in a spiral shape.
For another example, in another alternative example, the inductance element included in the inductance structure 110 may be a planar inductance. That is, the inductance element may be formed by a conductive layer (e.g., a metal conductive layer) having a planar shape.
For another example, in another alternative example, among a plurality of inductance elements included in the inductance structure 110, a part of the inductance elements may be spiral inductances, and another part of the inductance elements may be planar inductances, where the specific number may be selected according to actual application requirements.
Moreover, the relative position relationship between the inductive element included in the inductive structure 110 and the substrate structure 140 is not limited, and may also be selected according to the actual application requirements.
For example, in an alternative example, when the inductance structure 110 includes at least one spiral inductor, at least a portion (i.e., all or part) of each spiral inductor may be located inside the substrate structure 140 (as shown in fig. 4, so that the occupied space of the inductance structure 110 may be sufficiently reduced to make the integrated size of the filter 100 smaller), or at least a portion of at least one spiral inductor may be located inside the substrate structure 140.
For another example, in another alternative example, when the inductance structure 110 includes at least one planar inductance, each of the planar inductances may be at least partially located inside the substrate structure 140 (so that the occupied space of the inductance structure 110 may be sufficiently reduced, and the integrated size of the filter 100 may be smaller), or at least one of the planar inductances may be at least partially located inside the substrate structure 140.
In a specific application example, when the inductance structure 110 includes at least one planar inductance, all of the planar inductances may be located inside the substrate structure 140 in order to substantially reduce the integrated size of the filter 100.
In the second aspect, it should be noted that, for the capacitor structure 120, the specific number of the capacitor elements included in the capacitor structure 120 is not limited, and may be selected according to the actual application requirement.
For example, in an alternative example, the capacitive structure 120 may include a capacitive element. For another example, in another alternative example, the capacitance structure 120 may include a plurality of capacitance elements (the connection relationship between the plurality of capacitance elements is not particularly limited, and may be selected according to the actual application requirement, such as a series connection, a parallel connection, or may not be directly connected, such as connected with other elements, etc.).
The specific type of the capacitive element included in the capacitive structure 120 is also not limited, and may be selected according to the actual application requirement.
For example, in an alternative example, the capacitor element included in the capacitor structure 120 may be an integrated capacitor (as such, the integration of the formed filter 100 may be further improved, and the size of the device may be reduced). That is, in conjunction with fig. 5, the capacitor structure 120 may include an integrated capacitor chip (i.e., the at least one inductor element, the at least one integrated capacitor chip, and the at least one acoustic wave resonator may be electrically connected to form a filter circuit), and the integrated capacitor chip may include a first substrate and at least one capacitor element integrated on the first substrate.
The material of the first substrate is not limited, and for example, may include, but is not limited to, silicon, glass, quartz, sapphire, niobium lithiate, lithium tantalate, or the like.
For example, each of the capacitive elements may include a first conductive layer, a first dielectric layer, and a second conductive layer, the first conductive layer may be located on a side of the first substrate, the first dielectric layer may be located on a side of the first conductive layer away from the first substrate, and the second conductive layer may be located on a side of the first dielectric layer away from the first conductive layer.
For another example, in another alternative example, in conjunction with fig. 6, the capacitor element included in the capacitor structure 120 may be a plate capacitor. That is, the capacitive element may include a conductive layer and a second dielectric layer to form a plate capacitor.
In detail, the conductive layer may be two layers, and the two conductive layers may be disposed at an interval. The second dielectric layer may be located between the two conductive layers. Thus, the plate capacitor can be formed by the two conductive layers and the second dielectric layer.
Optionally, in the two examples, the specific configurations of the conductive layer and the dielectric layer are not limited, and may be selected according to the actual application requirement, as long as the conductive layer is capable of conducting electricity and the dielectric layer has a relatively suitable dielectric constant.
For example, in an alternative example, the conductive layer may be a metal conductive layer and the dielectric layer may be an inorganic material layer.
Moreover, the relative position relationship between the capacitive element included in the capacitive structure 120 and the substrate structure 140 is not limited, and may be selected according to the actual application requirement.
For example, in an alternative example, when the capacitor structure 120 includes at least one integrated capacitor chip, at least a part of the chip structure included in each integrated capacitor chip may be located inside the substrate structure 140 (so that the integrated size of the filter 100 may be smaller), or each integrated capacitor chip may be located outside the substrate structure 140.
For another example, in another alternative example, when the capacitor structure 120 includes at least one plate capacitor, at least a part of the layered structure included in each plate capacitor may be located inside the substrate structure 140 (in this way, the integrated size of the filter 100 may be made smaller).
In a specific application example, in order to substantially reduce the integrated size of the filter 100, the capacitor structure 120 may include capacitor elements that are all integrated capacitor chips, and all chip structures of the integrated capacitor chips are located inside the substrate structure 140.
In the third aspect, it should be noted that, for the acoustic wave resonant structure 130, a specific number of the acoustic wave resonators included in the acoustic wave resonant structure 130 is not limited, and may be selected according to a practical application requirement.
For example, in an alternative example, the acoustic wave resonant structure 130 can include an acoustic wave resonator. For another example, in another alternative example, the acoustic wave resonant structure 130 may include a plurality of acoustic wave resonators (the connection relationship between the plurality of acoustic wave resonators is not particularly limited, and may be selected according to the requirements of practical applications, such as series connection, parallel connection, or may not be directly connected, such as connection with other elements, etc.).
The specific type of the acoustic wave resonator included in the acoustic wave resonant structure 130 is also not limited, and may also be selected according to the actual application requirement.
For example, in an alternative example, the Acoustic Wave resonator may be a Surface Acoustic Wave (SAW) resonator. For another example, in another alternative example, the acoustic Resonator may be a solid-State Mounted Resonator (SMR). For another example, in another alternative example, the Acoustic wave Resonator may also be a Film Bulk Acoustic Resonator (FBAR).
In order to further increase the integration degree of the formed filter 100, at least one acoustic wave resonator included in the acoustic wave resonant structure 130 may be in the form of an integrated chip. That is, the acoustic wave resonant structure 130 may include at least one integrated acoustic wave resonant chip.
In detail, in conjunction with fig. 7, each of the integrated acoustic wave resonator chips may include a second substrate and at least one acoustic wave resonator. Each of the acoustic wave resonators may be integrated with (disposed on) the second substrate to form the integrated acoustic wave resonator chip.
Moreover, the relative position relationship between the acoustic wave resonator included in the acoustic wave resonant structure 130 and the substrate structure 140 is not limited, and may also be selected according to the actual application requirements.
For example, in an alternative example, when the acoustic wave resonant structure 130 includes at least one integrated acoustic wave resonant chip, at least a portion of the chip structure included in each integrated acoustic wave resonant chip may be located inside the substrate structure 140.
For another example, in another alternative example, when the acoustic wave resonant structure 130 includes at least one integrated acoustic wave resonant chip, each of the integrated acoustic wave resonant chips may be located at an outer region of the substrate structure 140.
For another example, in another alternative example, when the acoustic wave resonant structure 130 includes a plurality of integrated acoustic wave resonant chips, at least a part of the integrated acoustic wave resonant chips may include a chip structure located inside the substrate structure 140, and another part of the integrated acoustic wave resonant chips may be located in an outer region of the substrate structure 140.
In a specific application example, when the acoustic wave resonant structure 130 includes at least one integrated acoustic wave resonant chip and the capacitor structure 120 includes at least one integrated capacitor chip, the second substrate included in the at least one integrated acoustic wave resonant chip and the first substrate included in the at least one integrated capacitor chip respectively belong to different areas of the same substrate, so that the acoustic wave resonator included in the integrated acoustic wave resonant chip and the capacitor element included in the integrated capacitor chip are integrated on the same substrate, and the at least one integrated capacitor chip and the at least one integrated acoustic wave resonant chip belong to the same integrated chip. In this manner, the integration of the formed filter 100 can be further improved, resulting in a smaller device size.
Furthermore, for an integrated chip including a capacitive element and a sound wave resonator, the integrated chip may be partially or entirely located inside the substrate structure 140, or may be located outside the substrate structure 140, and may be selected according to a specific integration process and an integration size requirement, for example, when a smaller size is required, the integrated chip may be entirely disposed inside the substrate structure 140.
In the fourth aspect, it is noted that, for the substrate structure 140, specific materials of the substrate structure 140 are not limited, and may be selected according to practical application requirements.
For example, in an alternative example, the material of the substrate structure 140 may include, but is not limited to, an organic material, a ceramic material, and the like.
It should be further noted that, in order to realize electrical connection between different elements (e.g., electrical connection between a capacitive element and an acoustic wave resonator, electrical connection between a capacitive element and an inductive element, electrical connection between an inductive element and an acoustic wave element, and electrical connection between an inductive element and an inductive element), at least one conductive connection layer (e.g., a metal layer) may be further disposed inside or on the surface of the substrate structure 140, for being connected to the elements to be electrically connected, respectively.
When it is necessary to electrically connect the elements disposed inside the substrate structure 140 and the elements disposed in the region outside the substrate structure 140, a conductive structure such as a solder ball or a copper pillar may be disposed between the substrate structure 140 and the elements disposed in the region outside the substrate structure 140 to electrically connect the substrate structure 140 and the elements, or the conductive structure may be electrically connected by a metal bonding method.
Also, considering that some components may be completely wrapped inside the substrate structure 140 among the components disposed inside the substrate structure 140, in order to achieve the electrical connection between these components or the electrical connection between these components and the components disposed outside the substrate structure 140, the substrate structure 140 may be further provided with a via hole, and a conductive connection structure (such as a metal wire or a metal pillar) is disposed at the via hole to electrically connect different components.
Furthermore, in order to realize the electrical connection between the filter 100 and other devices (such as a power amplifier and a radio frequency switch included in the applied radio frequency communication device 10), a conductive interface is further disposed on the substrate structure 140, and the conductive interface can be electrically connected with each element included in the filter 100, so that after the conductive interface is electrically connected with other devices, the purpose of connecting each element included in the filter 100 with other devices can be realized, thereby realizing the input and output of radio frequency signals.
Further, for better illustration of the filter 100 provided in the embodiment of the present application, the embodiment of the present application also provides various specific application examples of the filter 100, which are specifically shown as follows.
In a first application example, referring to fig. 8, the filter 100 may include a substrate, a spiral inductor, an integrated capacitor chip, and an integrated acoustic wave resonator chip. Wherein the spiral inductor may be disposed inside the substrate, and the integrated capacitor chip and the integrated acoustic wave resonator chip may be disposed in an outer region of the substrate (on the first side of the substrate). The integrated capacitor chip and the integrated acoustic wave resonator chip may be respectively connected to the spiral inductor through solder balls and/or other conductive materials (e.g., copper pillars), and the other conductive materials may penetrate through the substrate to extend to a second side (the other side opposite to the first side) of the substrate, so as to form an external electrical connection interface of the filter 100.
In a second application example, referring to fig. 9, the filter 100 may include a substrate, a spiral inductor, and an integrated chip having a capacitive element and a sound wave resonator integrated therein. The spiral inductor may be disposed inside the substrate, and the integrated chip may be disposed in an outer region of the substrate (on the first side of the substrate). The ic chip may be connected to the spiral inductor via solder balls and/or other conductive materials (e.g., copper pillars), and the other conductive materials may penetrate through the substrate to extend to a second side (opposite to the first side) of the substrate, thereby forming an external electrical connection interface of the filter 100.
In a third application example, referring to fig. 10, the filter 100 may include a substrate, a spiral inductor, a plate capacitor, and an integrated acoustic wave resonator chip. The spiral inductor and the plate capacitor may be disposed inside the substrate, and the integrated acoustic wave resonator chip may be disposed in an outer region of the substrate (on the first side of the substrate). The integrated acoustic wave resonator chip may be connected to the spiral inductor and the plate capacitor through solder balls and/or other conductive materials (e.g., copper pillars), respectively, and the other conductive materials may extend through the substrate to a second side (opposite to the first side) of the substrate, so as to form an external electrical connection interface of the filter 100.
Referring to fig. 11, in a fourth application example, the filter 100 may include a substrate, a spiral inductor, an integrated capacitor chip, and an integrated acoustic wave resonator chip. The spiral inductor, the integrated capacitor chip and the integrated acoustic wave resonance chip can be arranged inside the substrate. The integrated capacitor chip and the integrated acoustic wave resonator chip may be connected to the spiral inductor through solder balls and/or other conductive materials (e.g., copper pillars), respectively, and the other conductive materials may extend to an outer region of the substrate, thereby forming an external electrical connection interface of the filter 100.
It will be understood that in the foregoing description, "a plurality" may mean, two and more. For example, "a plurality of inductive elements" refers to two or more numbers of inductive elements.
Also, in the foregoing description, the "all of the devices (such as integrated capacitor chips or integrated acoustic wave resonator chips) or the inductive elements" are located inside the substrate structure 140 "should not be understood as meaning that the inside of the substrate structure 140 must have a closed accommodating space, and the devices or elements are disposed in the accommodating space, but should be understood as meaning that the devices or elements can be disposed in the closed accommodating space inside the substrate structure 140, or can be partially or completely located between two opposite outer surfaces of the substrate structure 140, but can be in contact with the outer space of the substrate structure 140 (as shown in fig. 12, the inductive structure 110 is completely located between two opposite outer surfaces of the substrate structure 140, but is in contact with the outer space of the substrate structure 140, or part of the surface is exposed in the outer space of the substrate structure 140).
In summary, according to the filter 100 and the radio frequency communication device 10 provided by the present application, the substrate structure 140, the inductance structure 110, the capacitance structure 120, and the acoustic wave resonant structure 130 are packaged into a whole, and at least a part of the structure included in the inductance structure 110 is disposed inside the substrate structure 140, so as to improve the integration level of the formed filter 100, and the size of the filter 100 can be effectively reduced, so that the problem that the size of the filter structure is large due to low integration level in the existing device integration technology can be improved, and the application range of the filter structure is further widened.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims (10)

1. A filter, comprising:
an inductive structure comprising at least one inductive element;
a capacitive structure comprising at least one integrated capacitive chip;
an acoustic wave resonant structure comprising at least one integrated acoustic wave resonant chip;
the substrate structure, the inductance structure, the capacitance structure and the acoustic wave resonance structure are packaged into a whole, and at least part of the structure included by the inductance structure is positioned in the substrate structure;
the at least one inductance element, the at least one integrated capacitor chip and the at least one integrated sound wave resonance chip are electrically connected to form a filter circuit.
2. The filter of claim 1, wherein each of the integrated capacitive chips comprises:
a first substrate;
the capacitive element comprises a first conductive layer, a first dielectric layer and a second conductive layer, wherein the first conductive layer is positioned on one surface of the first substrate, the first dielectric layer is positioned on one surface of the first conductive layer far away from the first substrate, and the second conductive layer is positioned on one surface of the first dielectric layer far away from the first conductive layer.
3. The filter of claim 2, wherein at least one of the integrated capacitor chips comprises at least a portion of a chip structure located within the substrate structure.
4. The filter of claim 1, wherein the capacitor structure further comprises at least one plate capacitor, and each plate capacitor comprises:
two conductive layers arranged at intervals;
the second dielectric layer is positioned between the two conductive layers;
and at least part of the layered structure included by the conducting layer and the second dielectric layer is positioned in the substrate structure.
5. The filter of any one of claims 1-4, wherein each of the integrated acoustic resonator chips comprises:
a second substrate;
at least one acoustic wave resonator integrated with the second substrate.
6. The filter of claim 5, wherein at least one of the integrated acoustic wave resonator chips comprises at least a portion of a chip structure located within the substrate structure.
7. The filter of claim 6, wherein each of the integrated capacitive chips comprises a first substrate and at least one capacitive element integrated with the first substrate;
the first substrate of at least one integrated capacitor chip and the second substrate of at least one integrated acoustic wave resonance chip belong to different areas of the same substrate, so that the at least one integrated capacitor chip and the at least one integrated acoustic wave resonance chip belong to the same integrated chip.
8. The filter of any of claims 1-4, wherein the inductive structure comprises at least one spiral inductor;
wherein each spiral inductor is at least partially located inside the substrate structure.
9. The filter of any of claims 1-4, wherein the inductive structure comprises at least one planar inductor;
wherein each of the planar inductors is at least partially located inside the substrate structure.
10. A radio frequency communication device, comprising:
a first filter device for processing the received radio frequency signal;
the second filter device is used for processing the radio frequency signal to be transmitted;
wherein at least one of the first filter device and the second filter device is the filter of any one of claims 1 to 9.
CN202010780053.5A 2020-08-05 2020-08-05 Filter and radio frequency communication device Pending CN111740722A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112953455A (en) * 2021-02-22 2021-06-11 安徽安努奇科技有限公司 Filter structure
WO2023070332A1 (en) * 2021-10-26 2023-05-04 安徽安努奇科技有限公司 Filter manufacturing method and filter
CN116248071A (en) * 2023-03-13 2023-06-09 北京芯溪半导体科技有限公司 Filter, filter design method and communication equipment
WO2024103873A1 (en) * 2022-11-15 2024-05-23 安徽安努奇科技有限公司 Filter packaging structure and manufacturing method therefor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112953455A (en) * 2021-02-22 2021-06-11 安徽安努奇科技有限公司 Filter structure
CN112953455B (en) * 2021-02-22 2023-11-07 安徽安努奇科技有限公司 filter structure
WO2023070332A1 (en) * 2021-10-26 2023-05-04 安徽安努奇科技有限公司 Filter manufacturing method and filter
WO2024103873A1 (en) * 2022-11-15 2024-05-23 安徽安努奇科技有限公司 Filter packaging structure and manufacturing method therefor
CN116248071A (en) * 2023-03-13 2023-06-09 北京芯溪半导体科技有限公司 Filter, filter design method and communication equipment
CN116248071B (en) * 2023-03-13 2023-09-29 北京芯溪半导体科技有限公司 Filter, filter design method and communication equipment

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