CN100477302C - Multi-wavelength light-emitting bipolar body and light-emitting wafter structure - Google Patents

Multi-wavelength light-emitting bipolar body and light-emitting wafter structure Download PDF

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Publication number
CN100477302C
CN100477302C CNB200510008580XA CN200510008580A CN100477302C CN 100477302 C CN100477302 C CN 100477302C CN B200510008580X A CNB200510008580X A CN B200510008580XA CN 200510008580 A CN200510008580 A CN 200510008580A CN 100477302 C CN100477302 C CN 100477302C
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CN
China
Prior art keywords
luminescent wafer
wavelength
fluorescence coating
reflection material
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB200510008580XA
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Chinese (zh)
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CN1825635A (en
Inventor
李明顺
孙平如
何昌纬
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LIZHOU SCIENCE-TECHNOLOGY Co Ltd
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LIZHOU SCIENCE-TECHNOLOGY Co Ltd
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Priority to CNB200510008580XA priority Critical patent/CN100477302C/en
Publication of CN1825635A publication Critical patent/CN1825635A/en
Application granted granted Critical
Publication of CN100477302C publication Critical patent/CN100477302C/en
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Abstract

The invention at least arranges a fixed-wavelength fluorescent layer at the bottom of a luminous wafer, can fix the luminous wafer on a carrier, uses metal wires to form circuit connection of the luminous wafer and composes a multi-wavelength luminous diode able to combine light source of the luminous wafer with wavelength of the fluorescent layer to produce desired light colors.

Description

Multi-wavelength LED and luminescent wafer structure thereof
Technical field
The present invention relates to the photochromic performance technology of light-emittingdiode, aim to provide a kind of produce correctly photochromic, and the light-emittingdiode that effectively promotes the brightness expression effect with and the luminescent wafer structure.
Background technology
Press, the essential structure of general light-emittingdiode, be luminescent wafer to be cladded by relevant encapsulation material, and utilize gold thread to constitute the binding of luminescent wafer electrode and interlock circuit, with under luminescent wafer energising effect, modern luminescent wafer produces light source, its light source and via the encapsulation material that is cladded to external radiation exposure, and the light source fluorescence material wavelength central with encapsulating material that further allows luminescent wafer use combines, so as to forming the photochromic of expection.
As shown in Figure 1, it is a kind of LED structure that directly utilizes substrate 10 as 20 sections bodies of luminescent wafer for generally being commonly used at present, the light-emittingdiode of this type is that the both allocations at substrate 10 are provided with the dimple 11 that gos deep into substrate 10 surfaces, dimple 11 is as the space of luminescent wafer 20 fixations and filling encapsulation material 30 thus, be between luminescent wafer 20 and substrate 10 (or similar carrier), to be coated with solid brilliant material 40 when implementing, to reach purpose with luminescent wafer 20 fixations.
Yet so way will make the part section of luminescent wafer 20 bottoms imbed in the middle of the solid brilliant material 40, and then reduce the brightness expression effect of whole light-emittingdiode; Moreover, though can in the middle of solid brilliant material 40, sneak into the fluorescence material, the light source of luminescent wafer 20 can be combined with the wavelength of fluorescence material to become the photochromic of expection, but because the component ratio of solid brilliant material 40, coating scope, coating deal are not easy control, and the color quality that can't accurately control whole light-emittingdiode and presented.
Summary of the invention
In view of this, the present invention promptly is provided with the fluorescence coating of a set wavelength of tool at least in the bottom of luminescent wafer, can be on carrier with this luminescent wafer fixation, the circuit that is made of luminescent wafer gold thread connects, and under the cladding of encapsulation material, constitute a kind of light source of luminescent wafer that allows and combine with the wavelength of fluorescence coating so as to producing the photochromic multi-wavelength LED of expection.
Wherein, because fluorescence coating is the bottom of predetermined fixed at luminescent wafer, the deal of its coating scope and coating that therefore is effectively controlled, and can accurately control the color quality that produces through fluorescence coating; Even, can the reflection material be set, with the brightness expression effect of effective lifting light-emittingdiode at undermost fluorescence coating.
Description of drawings
Fig. 1 is a structure cutaway view of commonly using light-emittingdiode for a kind of;
Fig. 2 is the luminescent wafer stereoscopic figure for first embodiment of the invention;
Fig. 3 is the LED structure cutaway view for first embodiment of the invention;
Fig. 4 is the LED structure cutaway view for second embodiment of the invention;
Fig. 5 is the LED structure cutaway view for third embodiment of the invention;
Fig. 6 is the LED structure cutaway view for fourth embodiment of the invention;
Fig. 7 is the LED structure cutaway view for fifth embodiment of the invention;
Fig. 8 is the LED structure cutaway view for sixth embodiment of the invention.
[figure number explanation]
10 substrates
11 dimples
20 luminescent wafers
30 encapsulation materials
40 solid brilliant materials
50 fluorescence coatings
60 gold threads
70 reflection materials
Embodiment
For making your auditor know composition of the present invention, and execution mode, cooperate graphic being described as follows now:
Multi-wavelength LED of the present invention and luminescent wafer thereof structure aim to provide a kind of produce correctly photochromic, and the light-emittingdiode that effectively promotes the brightness expression effect with and the luminescent wafer structure, as shown in Figure 2, it mainly is the fluorescence coating 50 that is provided with a set wavelength of tool in the bottom of luminescent wafer 20 at least, again as shown in Figure 3, with these luminescent wafer 20 fixations in substrate 10 default spaces (or in carrier of similar functions), the circuit that is made of luminescent wafer 20 gold thread 60 connects, and under the cladding of encapsulation material 30, constitute a kind of light source of luminescent wafer 20 that allows and combine, so as to producing the photochromic multi-wavelength LED of expection with the wavelength of fluorescence coating 50.
Because fluorescence coating 50 is predetermined fixed bottoms at luminescent wafer 20, the deal of its coating scope and coating that therefore is effectively controlled, and can accurately control the color quality that is produced through fluorescence coating 50.
In the specific implementation, multi-wavelength LED of the present invention is can be shown in Figure 4 as, some fluorescence coatings 50 with set wavelength are set by the bottom at each luminescent wafer 20, and to constitute the more combination of multi-wavelength, generation meets the photochromic of expection; Certainly, can also be as shown in Figure 5, several luminescent wafers 20 are set in the middle of a light-emittingdiode, and be provided with the fluorescence coating 50 of a set wavelength of tool at least in the bottom of each luminescent wafer 20, or in the middle of encapsulation material 30, sneak into both fluorescence materials of the set wavelength of at least a tool of certainty ratio, to constitute the more combination of multi-wavelength, generation meets the photochromic of expection.
Even, can be as shown in Figure 6, at luminescent wafer 20 undermost fluorescence coatings 50 reflection material 70 is set, to promote the brightness expression effect of light-emittingdiode, this reflection material 70 is can be for being located at the natural crystalline solid of tabular of fluorescence coating 50 bottoms, or, has the natural crystalline solid of set reflection lines for the surface for as shown in Figure 7; Certainly, also can be as shown in Figure 8, directly sneak into the reflective particle in the middle of the fluorescence coating 50, allow the light source of light-emittingdiode towards the effect of set direction irradiation, to promote its brightness expression effect with formation.
As mentioned above, the invention provides a kind of produce correctly photochromic, and the light-emittingdiode that effectively promotes the brightness expression effect with and the luminescent wafer structure, so offer the application of patent of invention in accordance with the law; Yet, shown in the above implementation and stationary, be preferred embodiment person of the present invention, be not to limit to the present invention with this, be with, approximate with structure of the present utility model, device, feature etc. such as, identical, all should belong to creation purpose of the present utility model and claim in.

Claims (15)

1, a kind of luminescent wafer is characterized in that: be the fluorescence coating that is provided with a set wavelength of tool in the bottom of luminescent wafer at least, this fluorescence coating is the bottom of predetermined fixed in luminescent wafer.
2, luminescent wafer as claimed in claim 1, wherein, the undermost fluorescence coating of this luminescent wafer is provided with the reflection material.
3, luminescent wafer as claimed in claim 2, wherein, this reflection material is provided in a side of the fluorescence coating bottom.
4, luminescent wafer as claimed in claim 3, wherein, this reflection material is to be the natural crystalline solid of tabular.
5, luminescent wafer as claimed in claim 3, wherein, this reflection material is the natural crystalline solid that has set reflection lines for the surface.
6, luminescent wafer as claimed in claim 2, wherein, this reflection material is to sneak in the middle of the fluorescence coating.
7, luminescent wafer as claimed in claim 6, wherein, this reflection material is to be reflective particle.
8, a kind of multi-wavelength LED, it is characterized in that: be on carrier, to be provided with at least one luminescent wafer, the circuit that other has gold thread to constitute luminescent wafer connects, and by encapsulating material with each luminescent wafer coating, the bottom of each luminescent wafer is provided with the fluorescence coating of a set wavelength of tool at least, and this fluorescence coating is the bottom of predetermined fixed in luminescent wafer.
9, multi-wavelength LED as claimed in claim 8, wherein, this encapsulation material is to sneak into both fluorescence materials of the set wavelength of at least a tool of certainty ratio.
10, multi-wavelength LED as claimed in claim 8, wherein, the undermost fluorescence coating of this luminescent wafer is provided with the reflection material.
11, multi-wavelength LED as claimed in claim 10, wherein, this reflection material is provided in a side of the fluorescence coating bottom.
12, multi-wavelength LED as claimed in claim 10, wherein, this reflection material is to be the natural crystalline solid of tabular.
13, multi-wavelength LED as claimed in claim 10, wherein, this reflection material is the natural crystalline solid that has set reflection lines for the surface.
14, multi-wavelength LED as claimed in claim 10, wherein, this reflection material is to sneak in the middle of the fluorescence coating.
15, multi-wavelength LED as claimed in claim 14, wherein, this reflection material is to be reflective particle.
CNB200510008580XA 2005-02-23 2005-02-23 Multi-wavelength light-emitting bipolar body and light-emitting wafter structure Expired - Fee Related CN100477302C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB200510008580XA CN100477302C (en) 2005-02-23 2005-02-23 Multi-wavelength light-emitting bipolar body and light-emitting wafter structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB200510008580XA CN100477302C (en) 2005-02-23 2005-02-23 Multi-wavelength light-emitting bipolar body and light-emitting wafter structure

Publications (2)

Publication Number Publication Date
CN1825635A CN1825635A (en) 2006-08-30
CN100477302C true CN100477302C (en) 2009-04-08

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GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Assignee: DONGGUAN OASIS ELECTRONIC TECHNOLOGY Co.,Ltd.

Assignor: TAIWAN OASIS TECHNOLOGY CO.,LTD.

Contract fulfillment period: 2009.6.1 to 2016.5.30

Contract record no.: 2009990001298

Denomination of invention: Multi-wavelength light-emitting bipolar body and light-emitting wafter structure

Granted publication date: 20090408

License type: Exclusive license

Record date: 20091130

LIC Patent licence contract for exploitation submitted for record

Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.6.1 TO 2016.5.30; CHANGE OF CONTRACT

Name of requester: DONGGUAN LIZHOU ELECTRONIC SCIENCE AND TECHNOLOGY

Effective date: 20091130

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090408

CF01 Termination of patent right due to non-payment of annual fee