CN100477076C

CN100477076C - Heater, wafer heating apparatus and method for manufacturing heater

Info

Publication number: CN100477076C
Application number: CNB2005101071414A
Authority: CN
Inventors: 中村恒彦
Original assignee: Kyocera Corp
Current assignee: Kyocera Corp
Priority date: 2004-10-28
Filing date: 2005-09-28
Publication date: 2009-04-08
Anticipated expiration: 2025-09-28
Also published as: CN1767149A; JP2006127883A

Abstract

A heater that is capable of heating a object to a desired temperature in a short period while minimizing the temperature difference the surface of the object is provided. The heater comprising a plate having a first surface and a second surface, the first surface being a mount surface whereon an object is placed and having a resistive heating member; wherein the resistive heating member is formed in a continuous band having arc bands located on one of two concentric circles of different radii, at least one arc band located on the other circle, and linkage arc band that connects the arc band located on the one circle and the arc band located on the other circle; while the distance between the adjacent linkage arc bands is smaller than the distance between the arc band located on the one circle and the arc band located on the other circle.

Description

The manufacture method of heater and chip heating device and this heater

Technical field

The present invention relate generally to a kind of when heated chip the manufacture method of employed heater and chip heating device and this heater.

Background technology

The burning of the film forming processing of the semiconductive thin film in the manufacturing process of semiconductor device, etch processes, diaphragm irons in processing etc., is used for heater that semiconductor wafer (below be called wafer) is heated.

As such heater, for example in patent documentation 1, patent documentation 2 and the patent documentation 3, chip heating device has as shown in figure 16 been proposed.

This heater 771, with tabular ceramic body 772, metal shell 779 is the main composition key element, therefore, in the peristomes that substrate shell 779 is arranged that metal constituted such as aluminium, with nitride ceramics or the made tabular ceramic body 772 of carbide ceramics, through resin system thermal insulation link 774, fix by bolt 780 and to constitute.In this heater 771, top with tabular ceramic body 772 as the heating surface 773 that carries wafer W, following formed by tabular ceramic body 772, the resistance heater 775 of concentric circles for example shown in Figure 20 heats wafer.

Here, in the power supply of ceramic heating element 775, scolder is installed by power supply terminal 777, and this power supply terminal 777 and interts in the 779a of the bottom of metal shell 779 set lead-in wire and draws with the lead-in wire in the hole 776 778 and be electrically connected.

But, in such heater 771,, make the heating reactiveness of diaphragm comparatively even in order in the surface of wafer W is all, to form uniform film, make ℃ distribution homogeneous this point of wafer very important.Therefore, in the past in order to dwindle the temperature difference in the wafer face, following various countermeasures have been proposed.

One of this countermeasure is, resistance heater 775 cut apart make it independent, and the control temperature.

In the patent documentation 4, announced a kind of heater with a plurality of resistance heater subregions.In this heater, as shown in figure 17, therefrom mind-set is the radial fanned partition that forms 4 five equilibriums respectively outward.In addition, also have a kind of known heater as shown in figure 18, the resistance heater of peripheral part is divided into 4 subregions, the resistance heater of central part is circular subregion.

In addition, in the patent documentation 5, as shown in figure 19, announced a kind of have be divided into identical rectangular area 711～718, can be mutually independent or with the heater of a plurality of resistance heaters of controlling of combining respectively.This heater as shown in figure 19, in these 8 zones 711～718,4 zones 715～718, be arranged on and correspond respectively to the circumference of wafer in a circumferential direction on the position of the circular arc of 4 five equilibriums, other 4 zones 711～714, inboard in 4 zones 715～718 that surround periphery is arranged in parallel.

In addition, the shape of resistance heater, also announce to have to allow the resistance heater of the most peripheral in a plurality of resistance heaters be sinusoidal heater 500 (patent documentation 6), and allow the resistance heater 750 of most peripheral be rectangle (patent documentation 7 and patent documentation 8) heater 500 (with reference to Figure 21, (Figure 22) Figure 23).In these heaters, power supply 760 adjacent settings with resistance heater.

In addition, announced a kind of heater in the patent documentation 8 with spiral resistance heater.

In addition,, write down in the patent documentation 9 wafer W anchor (not shown) has been set in putting section 773, allowed wafer W from putting the heater that section 773 floats small distance in order to allow the uniformity of temperature profile of wafer.

In the patent documentation 10, announced that a kind of periphery at tabular ceramic body 772 is provided with the leg that surrounds wafer W, prevents the heater of wafer W lateral shift.

In addition, in the patent documentation 11, announced that a kind of outer edge at tabular ceramic body 772 is provided with to be used for the jut of chimeric wafer W, in the inboard of this jut, formed a plurality of convex bodies that prop up wafer W, by the heater of realizing that like this even temperature distributes.

In addition, in the patent documentation 12, announced and a kind ofly carried out the directing pin of the location of wafer W, by allowing the heater of uniformity of temperature profile of wafer W like this in the periphery setting of tabular ceramic body.

In addition, in the patent documentation 13, announced a kind ofly by freely adjusting the height of the anchor of wafer W, and can adjust the heater of the Temperature Distribution of wafer W.In addition, also announced the heater of a kind of anchor and directing pin tabling.

In addition, in patent documentation 14, patent documentation 15 and the patent documentation 16, a kind of ceramic heater 850 of the resistance heater that is embedded with coiled type 853 has as shown in figure 24 been proposed.This heater 850, in silicon nitride or the formed tabular ceramic body 851 of aluminum nitride and other nitride ceramic body, curl is buried the resistance heater 853 of coiled type underground, and the two ends of this resistance heater 853 are connected with power supply terminal 855.Like this, method as temperature difference in the face that reduces wafer, the density of resistance heater 853 of having announced the zone in the outside 10% that will put section increases, or the fluctuation of the number of turns of the per unit length of the resistance heater 853 of coiled type is controlled at 10% with inferior, come three-dimensional that resistance heater 853 is set.

In addition, in patent documentation 17 and the patent documentation 18, attempt to connect and to bury the resistance heater that coil diameter changes underground, bulge is set, reduce the temperature difference of wafer surface at the reflex part of resistance heater.

In addition, for example in CVD film forming treatment process, the chip holding component of this structure of the ceramic heater that is made of tabular ceramic body is supported in employing by ceramic tubular holding components, as shown in figure 25, the side's interarea that is embedded with the tabular ceramic body 851 of resistance heater 853,854 is put section 851a as what carry wafer, allowing the opposing party's interarea engage the ceramic heater 850 that forms with tubular holding components 860, also is known.In this heater 850, in the portion of terminal of resistance heater 853,854, scolder is equipped with power supply terminal 856,857, can allow this power supply terminal 856,857 pass through the inboard of tubular holding components 860, is connected with the outside.

In recent years, use the semiconductor element of 90nm wiring figure or 45nm wiring figure rule to increase gradually, when making such semiconductor element, exist requirement can allow Temperature Distribution more even, wafer is carried out the tendency of the heater of uniform heating.

[patent documentation 1] spy opens the 2001-203156 communique

[patent documentation 2] spy opens the 2001-313249 communique

[patent documentation 3] spy opens the 2002-76102 communique

[patent documentation 4] spy opens flat 11-121385 communique

[patent documentation 5] spy opens flat 11-354528 communique

[patent documentation 6] spy opens the 2001-6852 communique

[patent documentation 7] spy opens the 2001-223257 communique

[patent documentation 8] spy opens the 2001-257200 communique

[patent documentation 9] spy opens flat 10-223642 communique

[patent documentation 10] spy opens flat 10-229114 communique

[patent documentation 11] spy opens the 2002-237375 communique

[patent documentation 12] spy opens the 2002-184683 communique

[patent documentation 13] spy opens the 2001-68407 communique

[patent documentation 14] spy opens flat 4-101381 communique

[patent documentation 15] spy opens flat 7-220862 communique

[patent documentation 16] spy opens flat 7-65935 communique

[patent documentation 17] spy opens the 2004-6242 communique

[patent documentation 18] spy opens the 2004-111107 communique

[patent documentation 19] spy opens flat 11-339939 communique

[patent documentation 20] spy opens the 2001-102157 communique

[patent documentation 21] spy opens the 2002-170655 communique

But, heater in the past exists the very difficult even temperature that realizes to distribute, and distributes in order to realize even temperature, needs very complicated delicate problems such as control, need a kind of can passing through and quite simply construct the heater that allows Temperature Distribution more evenly heat.

In addition; be accompanied by semiconductor element wiring granular and in the chemistry expansion type diaphragm brought into use; much less the homogeneity of chip temperature; from wafer is placed on annealing device in a flash; to from wherein breaking away from, the temperature experience that finishes the transition between the heat treatment is also extremely important, preferably can allow the temperature of the wafer in wafer about 60 seconds after placing uniform and stable; but there is big this problem of temperature stabilization response time before in heater in the past.

In addition, be embedded with the heater of coiled type resistance heater, exist in the bend of resistance heater, the outside and inboard big this problem of heater variable density, and be difficult to dwindle radius of curvature.Therefore, in the method described in patent documentation 17 and the patent documentation 18, need be at the different resistance heater of tabular ceramic body connection wire loop diameter, or form bulge at the reflex part of resistance heater, in the volume production of heater, need very complicated step, therefore exist under the higher state of the rate of finished products of the stable goods of quality bills of materials, volume production is this problem of difficulty very.

In addition, the heater of tubular holding components is installed, has holding components heat radiation, make the wafer surface temperature difference increase and inhomogeneous this problem that becomes by tubular.

Therefore, in the patent documentation 19, announced that a kind of resistance density of inboard of the holding components 860 with tubular increases, thereby, prevented the heater of the breakage of tabular ceramic body 851 even in intensification rapidly, also can reduce temperature difference in the face.

In addition, in the patent documentation 20, announced in order to reduce holding components 860 with tubular and joined that thereby temperature difference prevents breakage in the face of ceramic heater of platform, and increased the resistance density of middle body, and buried independently resistance heater 854 underground near the composition surface of holding components 860.In addition, in the patent documentation 21, announced the resistance heater that is embedded with the holding components 860 that is used for heating tubular.

In addition, in recent years, require to shorten the heating-up time as far as possible, but have the ceramic heater of coiled type resistance heater, if just intensification might be damaged rapidly.Particularly, be equipped with corresponding to the diameter of maximization silicon wafer and use in the ceramic heater of tubular holding components,,, usually cause the heater breakage just thermal stress can increase if heat up rapidly for the 300mm size.

Summary of the invention

Therefore, the objective of the invention is to, temperature difference in a kind of face that for example can reduce heating object surfaces such as wafer is provided, and can will heat thing by the short time and be heated to heater to fixed temperature and the chip heating device that uses this heater.

In addition, the present invention also aims to, a kind of interior temperature difference of face that can reduce the heating object surface is provided, the reliability that can heat up rapidly is higher, comprises the heater and the manufacture method thereof of the tabular ceramic body that is embedded with the coiled type heater.

For achieving the above object, relevant the 1st heater of the present invention comprises:

Tabular ceramic body, this tabular ceramic body has side's interarea and the opposing party's interarea, one side's interarea is for placing the section of putting of heating object, its inside or the opposing party's interarea have resistance heater, described resistance heater is continuous band-shaped body, this continuous band-shaped body, at least two circular arc bands that have an area of on week with two circles of the concentric circles that is arranged in different radius, be positioned at least 1 circular arc band on the opposing party's circumference, and be connected with circular arc band on being positioned at described the opposing party's circumference with the circular arc band of a described circumference on week respectively, and adjacent connection circular arc band, the connection spacing of described adjacent connection circular arc interband is less than circular arc band and the circular arc spacing between the circular arc band on described the opposing party's circumference on the described circumference week;

Peripheral protuberance more than 3, it is retained as and can moves in the radiation direction of described tabular ceramic body or at least 1 direction in the vertical direction at the described periphery of putting section;

Inner projection, it is positioned at the inboard and lower than this periphery protuberance height of this periphery protuberance;

Shell, it has the power supply terminal to the power supply of described resistance heater, and has cooling jet and the peristome that is used for cooling off described tabular ceramic body, and the opposing party's interarea of described power supply terminal and described tabular ceramic body is covered; And

Set bolt, it is fixed on described peripheral protuberance in the described tabular ceramic body,

Described set bolt arrives the opposing party's interarea from described side's interarea and connects described tabular ceramic body, fixing described shell,

Described heater is characterised in that,

The difference of the internal diameter of the fixing hole of described peripheral protuberance and the external diameter of described set bolt is 0.3～2mm.

By of the present invention relevant the 1st heater that is as above constituted, a kind of interior temperature difference of face that can reduce the heating object surface can be provided, and can the short time heating object be heated to the heater of desired temperature.

In addition, the 2nd heater of the present invention, it comprises:

Tabular ceramic body, described tabular ceramic body has side's interarea and the opposing party's interarea, one side's interarea is for placing the section of putting of heating object, its inside or the opposing party's interarea have resistance heater, described resistance heater is made up of the continuous band-shaped body that the circular arc band on two circumference in the concentric circles that is arranged on different radii is connected at least;

Temperature element, it is arranged in the annulus resistance heating body region, this annulus resistance heating body region, connect in being defined in circular arc band the most inboard in described circular arc band inscribed circle and external in described circular arc band the zone between the circumscribed circle of outermost circular arc band;

Power supply, the two ends that it is formed on the continuous band-shaped body of described resistance heater are arranged on outside the described annulus resistance heating body region;

Described heater is characterised in that,

By of the present invention relevant the 2nd heater that is as above constituted, a kind of interior temperature difference of face that can reduce the heating object surface can be provided, and can the short time heating object be heated to the heater of desired temperature.

As optimal way, in relevant the 2nd heater of the present invention, among one side of the adjacent circumference in the described circumference, at least be provided with two described circular arc bands, this circular arc band, by be positioned at the opposing party's circumference on the adjacent circular arc band that is connected of circular arc band be connected, the connection spacing between the described adjacent connection circular arc band is less than the circular arc spacing between the circular arc band that is connected by this connection circular arc band.

As optimal way, in relevant the 1st and the 2nd heater of the present invention, described connection spacing is set in 30%～80% the scope of described circular arc spacing.

As optimal way, relevant the 1st heater of the present invention, have a plurality of described resistance heaters, described each resistance heater, be provided with respectively in the annulus resistance heating body region, this annulus resistance heating body region connects the inscribed circle of the most inboard circular arc band of the circular arc band that is arranged in each resistance heater and external zone between the circumscribed circle of outermost circular arc band in being defined in.

As optimal way, in relevant the 1st and the 2nd heater of the present invention, a plurality of described annulus resistance heating body region are provided with one heart, are respectively equipped with described resistance heater in each annulus resistance heating body region.

In addition, as optimal way, in the above-mentioned heater, described a plurality of annulus resistance heating body region, constitute by the 1st annulus resistance heating body region set in turn, the 2nd annulus resistance heating body region and the 3rd annulus resistance heating body region from the inboard, the inboard of described the 1st annulus resistance heating body region further has the central resistance heating body region of circle or annulus, further is provided with resistance heater in this central authorities' resistance heating body region.

And then, as optimal way, in the above-mentioned heater, the external diameter of described central resistance heating body region (D1) be described the 3rd annulus resistance heating body region external diameter (D) 20～40%, the external diameter (D2) of described the 1st annulus resistance heating body region is 40～55% of a described external diameter (D), the external diameter (D3) of described the 2nd annulus resistance heating body region is 55～85% of a described external diameter (D), in addition, the internal diameter (D22) of described the 1st annulus resistance heating body region is 34～45% of a described external diameter (D), the internal diameter (D33) of described the 2nd annulus resistance heating body region is 55～65% of a described external diameter (D), and the internal diameter (D0) of described the 3rd annulus resistance heating body region is 85～93% of a described external diameter (D).

In addition, as optimal way, in the above-mentioned heater, described the 2nd annulus resistance heating body region and described the 3rd annulus resistance heating body region, wait by a plurality of border region that are arranged on the radiation direction respectively and cut apart, the described borderline region of cutting apart described the 2nd annulus resistance heating body region, with the described borderline region of cutting apart described the 3rd annulus resistance heating body region, not stagger along 1 mode of radiating direction, if described the 2nd annulus resistance heating body region cut apart number, several different with cutting apart of described the 3rd annulus resistance heating body region, then desirable more.

In the above-mentioned heater, be arranged on the resistance heater in the described central resistance heating body region, can with the resistance heater serial or parallel connection of the 1st annulus resistance heating body region.

Between described central resistance heating body region and described the 1st annulus resistance heating body region, can be provided with the through hole that connects described tabular ceramic body.

In addition, as optimal way, in relevant the 1st and the 2nd heater of the present invention, be arranged in the width of the set resistance heater band of outermost annulus resistance heating body region, less than the width of resistance heater band set in other resistance heating body region.

In addition, described tabular ceramic body can be fixed on the described shell through the stop part.

In addition, relevant the 3rd heater of the present invention, it comprises:

Tabular ceramic body, this tabular ceramic body has side's interarea and the opposing party's interarea, one side's interarea is for placing the section of putting of heating object, its inside is embedded with resistance heater, described resistance heater, constitute by continuous conductors, described continuous conductors, have with 1 face of described side's main surface parallel in, and the center of a circumference of two circles in the concentric circles of different radius is two helical coils at center, center with another circumference is at least 1 helical coil at center, and be the helical coil at center with center with center respectively be that the helical coil at center is connected with described another circumference with a described circumference, and adjacent connecting coil, connection spacing between described adjacent connecting coil is the helical coil at center and is coil-span between the helical coil at center with the center of described another circumference less than the center with a described circumference;

Described heater is characterised in that,

By the of the present invention relevant heater that is as above constituted, can provide a kind of interior temperature difference of face that can reduce the heating object surface, the reliability that can heat up rapidly heater higher, that have the tabular ceramic body that is embedded with the coiled type heater.

As optimal way, in the 3rd heater, described connection spacing is set in 30%～80% the scope of described coil-span.

In addition, as optimal way, in the 3rd heater, the helix pitch that is positioned at outermost helical coil in the described helical coil is less than the helix pitch of other helical coils.

In addition, as optimal way, in the 3rd heater, engaging in the opposing party's interarea of described tabular ceramic body has the tubular holding components, be positioned at the helix pitch of described helical coil of the inboard of this holding components, less than the helix pitch of the described helical coil in the outside that is positioned at described holding components.

Associated wafer heater of the present invention is characterised in that: have any heater in relevant the 1st～the 3rd heater of the present invention.

Relevant heater manufacture method of the present invention is characterised in that, comprising:

In the tabular formed body that ceramic powders constituted, form the operation of groove;

In described groove, insert the operation of the resistance heater of coil shape;

In the space of described groove and described resistance heater, fill ceramic powders, this ceramic powders is prepared the operation of pressurization; And

The formed body that described preparation was pressurizeed is inserted in the heat-resisting mould, the operation of pressurizeing and firing.

Associated wafer processing method of the present invention is characterised in that, wafer is placed on putting in the section of associated wafer heater of the present invention, by described heater described wafer is heated, carry out simultaneously 1 in the formation of film forming semiconductive thin film, etch processes and resist film on this wafer at least.

Description of drawings

Fig. 1 is the profile of the formation of the heater of explanation related embodiment 1 of the present invention.

Fig. 2 is the vertical view of the shape of the resistance heater of explanation execution mode 1.

Fig. 3 A is the vertical view of the example of explanation desirable annulus resistance heating body region of the present invention.

Fig. 3 B is for becoming the resistance heater Region Segmentation of the more lateral in the annulus resistance heating body region of Fig. 3 A the vertical view of a plurality of example.

Fig. 4 is the vertical view of one of the shape of explanation ideal resistance heater of the present invention example.

Fig. 5 is the vertical view of one of the formation example of the resistance heater in the heater of explanation related embodiment 2 of the present invention.

Fig. 6 is the synoptic diagram of the formation of another concrete example of the resistance heater in the heater of explanation related embodiment 2 of the present invention.

Fig. 7 A is the profile of the formation of the heater of explanation related embodiment 3 of the present invention.

Fig. 7 B is the vertical view of the heater of execution mode 3.

Fig. 8 A is the amplification profile of relevant the 1st example of the peripheral protuberance of execution mode 3.

Fig. 8 B is the amplification profile of relevant the 2nd example of the peripheral protuberance of execution mode 3.

Fig. 8 C is the amplification profile of relevant the 3rd example of the peripheral protuberance of execution mode 3.

Fig. 8 D is the amplification profile of relevant the 4th example of the peripheral protuberance of execution mode 3.

Fig. 9 is the Y-Y line profile of Fig. 7 B.

Figure 10 A is the summary vertical view of one of the shape example of the resistance heating body region in the relevant heater of explanation execution mode 3.

Figure 10 B is further cut apart the resistance heating body region of Figure 10 A the summary vertical view of one of resistance heating body region afterwards example for explanation.

Figure 11 A is the summary stereogram of the formation of the ceramic heater of explanation related embodiment 4 of the present invention.

Figure 11 B is the X-X line summary profile of Figure 11 A.

Figure 12 is the synoptic diagram of the shape of the resistance heater in the heater of explanation execution mode 4.

Figure 13 A is the summary stereogram of the formation of the ceramic heater of explanation related variation example of the present invention.

Figure 13 B is the X-X line summary profile of Figure 13 A.

Figure 14 is the synoptic diagram of the resistance heater of mode declaration pattern specification execution mode 4.

Figure 15 A is the pattern vertical view of the desirable execution mode of the resistance heater in the variation shown in the key diagram 13A.

Figure 15 B is the X-X line summary profile of Figure 15 A.

Figure 16 is the profile of one of heater before explanation example.

Figure 17 is the synoptic diagram of the shape of the resistance heater before the explanation.

Figure 18 is the synoptic diagram of the shape of another resistance heater in the past of explanation.

Figure 19 is the synoptic diagram of the shape of another resistance heater in the past of explanation.

Figure 20 is the synoptic diagram of the shape of another resistance heater in the past of explanation.

Figure 21 is the synoptic diagram of the shape of another resistance heater in the past of explanation.

Figure 22 is the synoptic diagram of the shape of another resistance heater in the past of explanation.

Figure 23 is the synoptic diagram of the shape of another resistance heater in the past of explanation.

Figure 24 is the synoptic diagram of the shape of the resistance heater before the explanation.

Figure 25 is another ceramic heater summary profile in the past of explanation.

Embodiment

Following embodiments of the present invention describe.

Execution mode 1

Fig. 1 is the profile of formation of the heater of related embodiment 1 of the present invention.The heater 1 of this execution mode 1 has tabular ceramic body 2, power supply 6, power supply terminal 11 and metal shell 19.

In this execution mode 1, tabular ceramic body 2 is for example by being that the pottery of main component constitutes with the silicon nitride, and a side interarea is put section 3 as what place wafer W, is formed with resistance heater as described below 5 in the opposing party's interarea.

Power supply 6 is electrically connected with resistance heater 5 in the opposing party's interarea that is formed on tabular ceramic body 2, this power supply 6 and then be connected with power supply terminal 11.

Metal shell 19, the power supply terminal 11 that maintenance is connected with power supply 6 through surrounding the link 17 of power supply 6, is fixed on the periphery of the opposing party's interarea of tabular ceramic body 2.

In addition, tabular ceramic body 2 has the through hole 26 of perforation on thickness direction, is provided with the wafer picker 25 that can move up and down in this through hole 26, thereby can moves up and down wafer W, allows wafer W placement/decline in putting section 3.By above formation, can be through power supply terminal 11 from 6 power supplies of outside phase power supply, by temperature element 27 measure the temperature of ceramic body 2, on one side heated chip W on one side.

In addition, wafer W is remained from putting the state that section 3 floats by wafer anchor 8, and folk prescription contact that prevents wafer W etc. causes temperature fluctuation.

Here, among the present invention, preferably resistance heater 5 can be cut apart and be arranged to a plurality of zones, and power supply is set respectively, and be connected, make it possible to supply with different power to each power supply 6 with power supply terminal 11.So, can adjust power that load to give power supply terminal 11, allow the temperature of each temperature element 27 be given set point, make the surface temperature of putting the wafer W of being placed in the section 3 even.In this case, temperature element 27 is preferably in each zone and is provided with, but also can for example be provided with 1 in the zone more than two or 3.

Power supply 6 for example is made of gold, silver, palladium, platinum etc., guarantees conducting by for example contacting with power supply terminal.Power supply terminal 11 is connected with power supply 6, if having the method that can guarantee conducting, also can use methods such as scolding tin connection, scolder installation.

In the heater of present embodiment 1, formed ribbon resistance heater 5 in the inside of tabular ceramic body 2 or the interarea, as shown in Figure 2, be connected by the circular arc band 5i～5p that omits concentric circles that forms that will almost have identical live width by the connection circular arc band 5q～5v that turns back, and the 1 continuous conductor that forms constitutes.

Specifically, an end is the circular arc band 5i of power supply 6, forms formation and with the center of tabular ceramic body 2 be the part of circumference of the most inboard circle at center, and the other end is connected with the end that is connected circular arc band 5q that turns back.Turning back connects the other end of circular arc band 5q, and (center is the center of tabular ceramic body 2 with forming inboard the 2nd circle of formation.) the end of circular arc band 5k of a part of circumference be connected, the other end of circular arc band 5k is connected with the end that is connected circular arc band 5t that turns back.Turning back connects the other end of circular arc band 5t, and (center is the center of tabular ceramic body 2 with forming inboard the 3rd circle of formation.) the end of circular arc band 5n of a part of circumference be connected, the other end of circular arc band 5n is connected with the end that is connected circular arc band 5u that turns back.Turning back connects the other end of circular arc band 5u, and (center is the center of tabular ceramic body 2 with forming inboard the 4th circle of formation.) the end of circular arc band 5p of a part of circumference be connected, the other end of circular arc band 5p is connected with the end that is connected circular arc band 5v that turns back.Turning back connects the other end of circular arc band 5v, is connected with the end of the circular arc band 5o that forms a part that constitutes the inboard circumference that plays the 3rd circle, and the other end of circular arc band 5o is connected with the end that is connected circular arc band 5s that turns back.Turning back connects the other end of circular arc band 5s, is connected with the end of the circular arc band 5m that forms a part that constitutes the inboard circumference that plays the 2nd circle, and the other end of circular arc band 5m is connected with the end that is connected circular arc band 5r that turns back.Turning back connects the other end of circular arc band 5r, is connected with the circular arc band 5j of the part of the circumference that constitutes the most inboard circle, and the other end of circular arc band 5j forms power supply 6.

Like this, resistance heater 5, be by being set to constitute concentrically ringed a plurality of circular arc band 5i～5p, will being arranged on turning back of being together in series between the adjacent circular arc band 5i～5p on the different circumference of radius and connecting 1 long ribbon shape heater that circular arc band 5q～5v is constituted, its two ends (end of

circular arc band

5i, 5j) forms power supply 6.

In the execution mode 1, resistance heater 5, circular arc band 5i and circular arc band 5j, circular arc band 5k and circular arc band 5m, circular arc band 5n and circular arc band 5o and circular arc band 5p are set to constitute respectively circle, with each former concentric circles that is set to, by like this, if resistance heater 5 heating, could allow put section 3 Temperature Distribution therefrom the mind-set circumference be concentric circles and distribute.

Here, particularly be characterised in that in the execution mode 1, allow adjacent a pair of turn back connect circular arc band 5q with turn back is connected circular arc band 5r, turn back connect circular arc band 5s with turn back be connected circular arc band 5t, the connection circular arc band 5u that turns back is connected interval L1, L2, L3 between the circular arc band 5v with turning back, and compares less at each interval L4, the L5, the L6 that radiate between circular arc band 5i～5p adjacent on the direction.

By like this, not only can allow circular arc band 5i～5p, can also allow turns back, and to connect the caloric value of the per unit volume among circular arc band 5q～5v suitable, thereby can improve the thermal uniformity (putting the temperature uniformity in the section 3) of putting section 3.Also be, adjacent in the past a pair of interval L1, L2, the L3 that connects between circular arc band 5q～5v that turn back is set to, equate with each interval L4, L5, L6 distance between circular arc band 5i～5p adjacent on the radiation direction, but in such figure, the heat generation density of the periphery of (below be called reflex part) P5 diminishes because circular arc band 5i～5p and the coupling part that is connected the reflex part between circular arc band 5q～5v turned back, therefore the temperature in the outside of reflex part P5 descends, make the interior temperature difference of face of wafer W increase the infringement thermal uniformity.

Relative therewith, interval L1, the L2, the L3 that turn back between connection circular arc band 5q～5v 1 couple on the same circumference among the present invention are set to, littler than each corresponding interval L4, L5, L6 between circular arc band 5i～5p adjacent on the radiation direction, by like this, by the heating that connects circular arc band 5q～5v from relative turning back, caloric value to reflex part P5 compensates, thereby the temperature that can suppress reflex part P5 descends.By like this, can reduce to put the interior temperature difference of face of the wafer W of being placed in the section 3, improve thermal uniformity.

Particularly, if interval L1, the L2, the L3 that turn back between connection circular arc band 5q～5v 1 couple on the same circumference are set to, radiation on the direction each corresponding interval L4 between adjacent circular arc band 5i～5p, L5, L6 30%～80%, just can allow the thermal uniformity put in the section 3 the highest.Even more ideal is to allow L1, L2, L3 be respectively 40～60% of corresponding L4, L5, L6.

In addition, resistance heater of the present invention 5 is owing to be connected circular arc band 5q～5v and constitute with turning back by circular arc band 5i～5p, therefore can provide a kind of with the former rectangle resistance heater that turns back to compare, reduced the possibility that edge part is applied excessive stress, even heater 1 dramatic temperature rises or descends, damage the also less high heater 1 of reliability of possibility of tabular ceramic body 2 or resistance heater 5.

In addition, in the execution mode 1, be preferably under the form of the resistance heater shown in Fig. 2, the most inboard circle of circular arc band 5i and circular arc band 5j will be provided with, and the inboard that is provided with circular arc band 5m and circular arc band 5k rise the 2nd between the circle interval L4, the 2nd circle and be provided with circular arc band 5n and the inboard of circular arc band 5o rise the 3rd between the circle interval L5 and the 3rd circle and be provided with interval L6 between the outermost circle of circular arc band 5p, be set to much at one.

Like this, if will radiation on the direction adjacent circular arc band almost uniformly-spaced be provided with owing to can allow the caloric value of per unit volume of each circular arc band 5i～5p almost equal, the therefore heating inequality that can suppress to put the radial direction in the section 3.

In addition, the resistance heater 5 of above-mentioned formation even also very effective under the situation in being embedded in tabular ceramic body, also has identical effect under the situation in being arranged on the opposing party's interarea of tabular ceramic body 2.Particularly, when in the opposing party's interarea, being formed with ribbon resistance heater 5, on this resistance heater 5, be formed with under the tectal situation, prevent that the effect of tabular ceramic body 2 and resistance heater 5 breakages is very desirable.

In addition, above-mentioned resistance heater can be made of a plurality of heaters that can concentric circles independently heat.In this case, preferably the interval between the resistance heater band of the most peripheral of concentric circles and its inboard band is set to littler than the interval of its inboard resistance heater.By such resistance heater 5, can easily replenish, thereby the peripheral temperature that can prevent the wafer W face descends to the more heat that peripheral part discharged from tabular ceramic body 2.

In addition, in the heater 1 of present embodiment 1, preferably be divided into the concentrically ringed a plurality of circular resistance heating body region that is centered close on the central shaft of putting wafer W set in the section 3.This is because when the surface of circular wafer W is heated, be subjected to the environmental gas of wafer W periphery and the wall of facing mutually with wafer W and the influence of air-flow, in order not allow the surface temperature of discoideus wafer W fluctuate, and with around the wafer W and top opposite face, and the relative wafer W of ambient windstream center symmetry.For wafer W is evenly heated, need with the heater 1 of the centrosymmetric above-mentioned environment facies coupling of relative wafer W, therefore preferably will put section 3 center symmetries and cut apart, form resistance heating body region 4.

Particularly, for the surface temperature to the wafer W more than the 300mm evenly heats, concentrically ringed circular resistance heating body region is preferably 3.

The ideal example that has shown a plurality of resistance heating body region 4 after cutting apart among Fig. 3 A.This ideal zone is cut apart in the example, is divided into the most inboard circular or circular resistance heating body region 4a, with and concentrically ringed 3 circular annulus resistance heating body region 4b, 4cd, 4eh in the outside.Like this, in this example,, resistance heater 5 cut apart be arranged to 4 resistance heating body region in order to improve the thermal uniformity of wafer W.

In addition, if outer diameter D 1 with the resistance heating body region 4a of the central part of above-mentioned heater 1 of the present invention, be made as and be 20～40% of the outer diameter D of the annulus resistance heating body region 4eh of peripheral part, the outer diameter D 2 of the resistance heating body region 4b in its outside, be 40～55% of the outer diameter D of the annulus resistance heating body region 4eh of peripheral part, the inside diameter D 0 of the annulus resistance heater 4eh of most peripheral be most peripheral annulus resistance heating body region 4eh outer diameter D 55～85%, just can reduce the interior temperature difference of face of wafer W, be very desirable.

Here, the external diameter of resistance heating body region is meant, with the diameter of the external circle (circumscribed circle) of the outermost circular arc band of formed resistance heater in this resistance heating body region.In addition, the internal diameter of resistance heating body region is meant, with the diameter of the circle (inscribed circle) that connects in the most inboard circular arc band of formed resistance heater in this resistance heating body region.In addition, under the situation of definition circumscribed circle and inscribed circle, the circular arc shaped portion that obtains by the protuberance of removing in the power supply constant resistance heater defines.

This be because, if 20% of outer diameter D 1 discontented D, because the external diameter of the resistance heating body region 4a of central part is too small, even therefore the caloric value of resistance heating body region 4a is bigger, the temperature of the central part of resistance heating body region 4a also might not can rise, and might cause the central part temperature to descend.In addition, if outer diameter D 1 has surpassed 40%, because the external diameter of the resistance heating body region 4a of central part is excessive, therefore when the temperature of central part rises, the temperature of the periphery of resistance heating body region 4a also can rise, thereby might cause the temperature of periphery of resistance heating body region 4a too high.In addition, preferably outer diameter D 1 is 20～30% of D, it is desirable to outer diameter D 1 more and is 23～27% of D, by like this, can further reduce the interior temperature difference of face of wafer W.

In addition, if 40% of outer diameter D 2 discontented outer diameter D, because the periphery of heater 1 cools off easily, when therefore increasing the caloric value of annulus resistance heating body region 4cd if prevent the temperature of wafer W periphery from descending, might allow the temperature of inboard of the annulus resistance heating body region 4cd the center of wafer W near raise, cause that temperature difference strengthens in the face of wafer W.In addition, if outer diameter D 2 has surpassed 55% of outer diameter D, increase the caloric value of annulus resistance heating body region 4cd even prevent the temperature of wafer W periphery from descending, because the temperature of annulus resistance heating body region 4cd rises, the influence that might allow the temperature of wafer W periphery descend arrives annulus resistance heating body region 4b, causes the temperature outside of annulus resistance heating body region 4b to descend.Preferably allow outer diameter D 2 be 41%～53% of outer diameter D, even more ideal is 43～49%, can further reduce the interior temperature difference of face of wafer W like this.

In addition, if 55% of outer diameter D 3 discontented outer diameter D, because the periphery of heater 1 cools off easily, when therefore increasing the caloric value of annulus resistance heating body region 4eh if prevent the temperature of wafer W periphery from descending, might allow the temperature of inboard of the annulus resistance heating body region 4eh the center of wafer W near raise, cause that temperature difference strengthens in the face of wafer W.In addition, if outer diameter D 3 has surpassed 85% of outer diameter D, increase the caloric value of annulus resistance heating body region 4eh even prevent the temperature of wafer W periphery from descending, because the temperature of annulus resistance heating body region 4eh rises, the influence that might allow the temperature of wafer W periphery descend arrives annulus resistance heating body region 4cd, causes the temperature outside of annulus resistance heating body region 4cd to descend.Preferably allow outer diameter D 3 be 65%～85% of outer diameter D, even more ideal is 67～70%, can further reduce the interior temperature difference of face of wafer W like this.

In addition, the heater 1 that above-mentioned a plurality of resistance heaters 5 are constituted can be calibrated the thickness fluctuation of the heater of delicate asymmetry all around that surrounding environment produced and symmetry, can reduce temperature difference in the face of wafer W simultaneously.

More than the overall dimension of resistance heating body region 4 is illustrated, but among the present invention, under the situation that is divided into a plurality of resistance heating body region, be preferably between the resistance heating body region in inboard resistance heating body region and its outside, be the white space that there is not resistance heater 5 in circular setting.By white space is set like this, anchor 8, through hole 26 and power supply 6 can be formed in the white space, thereby can easily prevent the generation of these anchors 8, through hole 26 and power supply 6 caused temperature fluctuations, reduce the possibility of the increase of the temperature difference in the wafer face.

In addition, can allow the inside diameter D 11 of resistance heating body region 4 of outer diameter D 1 of central side of center resistance heating body region 4a, be 5～10% of diameter D.By like this, can in diameter is the circle of D11, for example anchor 8 be set, thereby can prevent that the interior temperature of wafer face that anchor 8 is caused from descending.

In addition, preferably allow the inside diameter D 22 of resistance heating body region of above-mentioned outer diameter D 2 be 34～45% of above-mentioned outer diameter D, the inside diameter D 33 of the resistance heating body region of above-mentioned outer diameter D 3 is 55～65% of an above-mentioned outer diameter D, and the inside diameter D 0 of the resistance heating body region of above-mentioned outer diameter D is 85～93% of an above-mentioned outer diameter D.

Why preferably allow the inside diameter D 22 of inboard the 2nd the annulus resistance heating body region 4b of rising be 34～45% of diameter D, be because by setting like this, can be between resistance heating body region 4a and annulus resistance heating body region 4b, diameter be set be about 1～22% circular resistance white space, even in zone (resistance white space), picker 25 etc. is set, also can Min. prevent degradation under the interior temperature of wafer face.Even more ideal is that inside diameter D 22 is set at 36～41% of diameter D.By setting like this, the through hole that connects plate body can be set between resistance heating body region 4a and annulus resistance heating body region 4b.

In addition, preferably the inside diameter D 33 of annulus resistance heating body region 4cd is made as 55～65% of diameter D.Like this, can between annulus resistance heating body region 4b and annulus resistance heating body region 4cd, the resistance heater white space be made as ring-type.Owing to the power supply 6 that each resistance heater is powered can be set in this ring-type white space, therefore can prevent to cause the wafer W coding to produce cold spot etc. because of power supply 6 is set.Even more ideal is that inside diameter D 33 is 58～63% of diameter D.

In addition, preferably the inside diameter D 0 of annulus resistance heating body region 4eh is made as 85～93% of diameter D.Like this, can between annulus resistance heating body region 4eh and annulus resistance heating body region 4cd, the resistance heater white space be made as ring-type.By anchor 8 and the power supply 6 of supporting heating objects such as wafer W is set in this circular white space, can easily wafer W be heated, and can not increase temperature fluctuation in the wafer face.Even more ideal is that inside diameter D 0 is 90～92% of diameter D.

In addition, be set to as mentioned above in the heater 1 that a plurality of circular resistance heaters 5 are constituted, because the restriction on the delicate asymmetry all around that surrounding environment produced, the method for making of ribbon resistance heater, for example print large-scale resistance heater in silk screen printing, then the thickness fluctuation about might increase.Because such environment for use or the restriction on the method for making if cut apart the zone of above-mentioned ring-type, just can allow the interior temperature difference of face of wafer quite little, are very desirable.

Shown among Fig. 3 B in heater 1 of the present invention, further cut apart another example of the Region Segmentation of circular annulus resistance heating body region 4cd, 4eh.In the example of this Fig. 3 B, among 4 circular resistance

heating body region

4a, 4b, 4cd, the 4eh, inboard resistance

heating body region

4a, 4b are made of annulus, make its central angle equate (being respectively 180 °) further 2 five equilibriums of annulus resistance heating body region 4cd in its outside, form two fan-shaped resistance heating body region 4c, 4d, and then the annulus resistance heating body region 4eh in its outside, by 4 five equilibriums and make its central angle equate (being respectively 90 °), 4 the fan-shaped resistance heating body region 4e that form, 4f, 4g, 4h constitute.Like this, can allow the surface temperature of wafer W more even, be very desirable.

In addition, in the example of Fig. 3 B, each resistance heating body region 4a～4h preferably respectively as shown in Figure 4, has the resistance heater 5a～5h that can independently control heating.

In addition, in the example of Fig. 3 A and Fig. 3 B, if the external environment condition of heater 1 or frequently change of place is set, just could come

resistance heater zone

4a, 4b by 1 control circuit.This be because, if adopt such formation, owing to can between resistance

heating body region

4a, 4b, given interval be set, therefore the through hole that picker connected 26 that lifts wafer W can be set.

If resistance heating body region 4a at above-mentioned central portion, and between the annulus resistance heating body region 4b in its outside, the through hole 26 that connects above-mentioned plate body is set, can prevents that just through hole 26 caused chip temperatures from descending, reducing temperature difference in the wafer W face, is very desirable.

In addition, in the above example,, be divided into two parts that central angle equates, annulus resistance heating body region 4eh is divided into 4 parts that central angle equates, but the present invention is not limited to this circular annulus resistance heating body region 4cd.

In addition, the line of demarcation of resistance heating body region 4c, the 4d shown in Fig. 3 B is a straight line, but does not need one to be decided to be straight line, can also be wave-like line.In addition, resistance heating body region 4c, 4d, the preferably center of concentrically ringed relatively heater resistance region and center symmetry.

Equally, resistance heating body region 4e and 4f, 4f and 4g, 4g and 4h, 4h and 4e line of demarcation does not separately need one to be decided to be straight line yet, can be wave-like line.In addition, the preferably center of concentrically ringed relatively resistance heating body region and center symmetry.

In addition, the line of demarcation of the line of demarcation of resistance heating body region 4c, 4d and resistance heating body region 4e, 4f, 4g, 4h preferably is not positioned on the straight line.This be because, by not being positioned on the straight line, can prevent to produce near the low warm spot the line of demarcation.

Also be, cut apart resistance heating body region 4e, 4f, 4g, 4h and resistance heating body region 4c, 4d among the present invention, make the border region of resistance heating body region 4e among the ring-type annulus resistance heating body region 4eh of most peripheral, 4f, 4g, 4h, the resistance heating body region 4c among the annulus resistance heating body region 4cd inboard with it, the border region of 4d stagger.

Followingly be specifically described with reference to Fig. 3 B.

Here, at first define the datum line Ls that passes through from the center of tabular ceramic body 2, by becoming the straight line of minute angle Δ β with datum line Ls, the side border of definition resistance heating body region 4e.Next, define the opposing party border of resistance heating body region 4e by the straight line that becomes angle β 1 with datum line Ls.In addition, β 1=90 °-Δ β here.And then, the side border of the straight line definition resistance heating body region 4f by becoming angle β 2 with datum line Ls.In addition, β 2=90 °+Δ β here.As above operate, just defined the border region Zef between resistance heating body region 4e and the resistance heating body region 4f.Below define the resistance heating body region 4e, 4f, 4g, 4h and the border region that annulus resistance heating body region 4eh are divided into 4 parts equally.

Next, define the annulus resistance heating body region 4cd of the inboard that is positioned at annulus resistance heating body region 4eh according to datum line Ls.Define the side border of resistance heating body region 4c by the straight line that becomes angle α 1 with datum line Ls.In addition, α 1=α one Δ α here.And then, the side border of the straight line definition resistance heating body region 4d by becoming angle α 2 with datum line Ls.In addition, α 2=α+Δ α here.By like this, just defined the border region Zcd between resistance heating body region 4c and the resistance heating body region 4d.Afterwards, define the opposing party border of resistance heating body region 4d by the straight line that becomes angle (α 1+180 °) with datum line Ls.And then, the opposing party border of the straight line definition resistance heating body region 4c by becoming angle (α 2+180 °) with datum line Ls.Resistance heating body region 4c, the 4d and the border region that annulus resistance heating body region 4cd are divided into 2 parts have as above just been set.

Here, minute angle Δ β and minute angle Δ α, unique corresponding with interval L1 described later, minute angle Δ β equates with minute angle Δ α usually.

In the above explanation, to annulus resistance heating body region 4eh is divided into 4 parts, and set resistance heating body region 4e, 4f, 4g, 4h, and annulus resistance heating body region 4cd is divided into 2 parts, and the situation of setting resistance heating body region 4c, 4d is illustrated, but the present invention is not limited in the above-mentioned number of cutting apart.

Among the present invention, between the resistance heating body region of the resistance heating body region of most peripheral and inboard thereof, each cuts apart number (or based on central angle of cutting apart several zones of cutting apart) by suitable setting, and the angle [alpha], the β that are used for setting the relative datum line on border, can allow the resistance heating body region of most peripheral and the border region in the inboard resistance heating body region thereof stagger, and do not arrange point-blank, thereby can prevent to produce cold spot, reduce the temperature difference in the wafer face.

As mentioned above, resistance heating body region shown in Fig. 3 B of one of the present invention example is set in the example, boundary Zcd in the annulus resistance heating body region 4cd is positioned at from the folded zone of the central angle alpha 1～α 2 of the plate body of the datum line Ls at the center by plate body.In addition, the boundary Zeh in the annulus resistance heating body region 4eh is positioned at the folded zone of central angle β 1～β 2.Like this, the setting border region that staggers makes that above-mentioned α 1～α 2 can be not overlapping with β 1～β 2.

In addition, in the heater 1 of the present invention, the interval on the circumferencial direction of 5 of a plurality of resistance heaters in same resistance heating body region, the interval that cans be compared to most between the radiation direction band in the same resistance heater 5 is little.By constituting like this, can prevent near the generation of the cold spot that produced boundary.

Also promptly, the example by Fig. 4 describes, and along the interval Lcd of the circular cone direction of resistance heater 5c and resistance heater 5d, interval L6, the L7 of radiation direction that cans be compared to the circular arc band in the same resistance heater 5c (or 5d) most is little.In addition, each L1, L2 at interval along circumferencial direction between resistance heater 5e and the resistance heater 5f, between resistance heater 5f and the resistance heater 5h, between resistance heater 5h and the resistance heater 5g, between resistance heater 5g and the resistance heater 5e, interval L4, the L5 of radiation direction that cans be compared to the circular arc band in

same resistance heater

5e, 5f, 5g, the 5h most is little.By constituting like this, can prevent near the generation of the cold spot that produced boundary.

Relevant range of the present invention shown in Fig. 3 B is cut apart in the example, the resistance heating body region, except resistance heating body region 4a, among 3 circular annulus resistance heating body region 4b, 4cd, the 4eh, the most inboard annulus resistance heating body region 4b, do not cut apart and, 1 resistance heater 5b is set therein as 1 resistance heating body region.The annulus resistance heating body region 4cd in the outside of annulus resistance heater 4b by annulus 2 five equilibriums resulting 2 fan-shaped resistance heating body region 4c, 4d are constituted, is provided with

resistance heater

5c, 5d respectively among resistance heating body region 4c, the 4d after cutting apart.In addition, the annulus resistance heating body region 4eh in the outside of annulus resistance heater 4cd by annulus 4 five equilibriums resulting 4 fan-shaped resistance heating body region 4e, 4f, 4g, 4h are constituted, is respectively arranged with

resistance heater

5e, 5f, 5g, 5h.Like this can be by resistance heating body region and the resistance heater shown in Fig. 3 B, the surface temperature of even heated chip W.

In the heater 1 shown in Fig. 3 B, set resistance heater 5a～5h among each resistance heating body region 4a～4h preferably can independently control.

But regional 4a and regional 4b can be by controlling because of the environment for use of heater 11 control circuit in parallel or series connection.In addition, the interval between resistance heating body region 4a and the 4b can be set at the through hole that is used for connecting the picker that lifts wafer W can be set.

In addition, more than circular annulus resistance heating body region 4cd, 4eh 2 cut apart respectively, 4 cut apart, but the present invention is not limited to this.

Cut apart the resistance heating body region 4c of Fig. 3 B, the line of demarcation of 4d is represented by straight line, but not need must be straight line, also can be wave-like line.The center in the preferably concentrically ringed relatively heater of resistance heating body region 4c, 4d zone and center symmetry.

Equally, it must be straight line that each line of demarcation between resistance heating body region 4e and 4f, 4f and 4g, 4g and 4h, 4h and the 4e does not need yet, and can be wave-like line.Zone after cutting apart, preferably concentrically ringed relatively center and center symmetry.

Each resistance heater 5 is made by print process etc., and the band of resistance heater 5 is preferably formed as and is wide 1～5mm, thick 5～50 μ m.If once printed printing surface is excessive, then because before and after the printing surface or about, the pressure differential between printer and the silk screen causes the print thickness might be different.Particularly,, then might cause the thickness difference all around of resistance heater 5, make designed caloric value produce fluctuation if the size of resistance heater 5 increases.If the caloric value fluctuation is just temperature difference can increase in the face of wafer W, very undesirable.Is effectively because of the caused temperature fluctuation of the thickness fluctuation of this resistance heater and the bigger resistance heater 5 of external diameter is cut apart in order to prevent.

Therefore, cut apart by carrying out 2 except the annulus resistance heating body region 4cd of concentric ring-shaped that wafer W is put the central part of section 3, bigger circular annulus resistance heating body region 4eh is carried out 4 to be cut apart, can allow the printing size of the resistance heater 5 in the resistance heating body region 4 less, therefore, can allow the thickness of each one of resistance heater 5 average, and then delicate temperature difference all around that can calibration chip W, make the surface temperature of wafer W average.In addition, in order to finely tune the resistance value of each resistance heater 5 bands, can by formation elongated slots such as laser, adjust resistance value along resistance heater.

In addition, the figure of resistance heater 5a, the 5b shown in Fig. 4,5c, 5d, 5e, 5f, 5g, 5h is made of the figure that turns back respectively.

In addition, in the heater 1 of the present invention, the diameter D of the circumscribed circle C of resistance heater 5, be preferably above-mentioned tabular ceramic body 2 diameter DP 90～97%.

If the diameter D of the circumscribed circle C of resistance heater 5 is less than 90% of the diameter DP of tabular ceramic body 2,, cause allowing wafer heat up rapidly or the temperature response characteristics of the wafer W of rapid cooling worsens just then heat up or the time of cooling can increase.In addition,, and do not allow the temperature of periphery of wafer W descend, preferably allow the diameter D be 1.02 times of degree of the diameter of wafer W for the even surface temperature of heated chip W.Therefore, if the size of the relative wafer W of diameter DP of tabular ceramic body 2 has exceeded above-mentioned scope and increases, then the size of wafer W is compared less with the diameter DP of tabular ceramic body 2, the efficiency of heating surface variation of the wafer W of the input electrical power of heated chip W is therefore very undesirable relatively.In addition, if tabular ceramic body 2 increases, then because the area that is provided with of wafer manufacturing installation increases, therefore the running rate that area is set of semiconductor-fabricating device reduces relatively, and is also very undesirable.

If the diameter D of the circumscribed circle C of resistance heater 5 is greater than 97% of the diameter DP of tabular ceramic body 2, then the interval between the periphery of contact component 17 and resistance heater 5 diminishes, heat flows to contact component 17 from the peripheral part of resistance heater 5, makes the non-uniform temperature of outer peripheral portion.Particularly, even not with the part of the contacted circular arc band 51 of circumscribed circle C of peripheral part, heat is also through contact component 17 flow processs, and because the circular arc band 51 of peripheral part is to the central part bending of tabular ceramic body 2, therefore, might make the temperature that is short of the part P of circular arc band 51 along the circumscribed circle C that surrounds resistance heater 5 descend, cause the interior temperature difference of face of wafer W to increase.Among the present invention, it is desirable to more, the diameter of the circumscribed circle C of resistance heater 5 is made as tabular ceramic body 2 diameter DP 92～95%.

In addition, in form shown in Figure 1, the external diameter of tabular ceramic body 2 and metal shell 19 about equally, and metal shell 19 is under the situation of the tabular ceramic body 2 of following support, for temperature difference in the face that reduces wafer W, preferably allow the diameter D of circumscribed circle C of resistance heater 5 be tabular ceramic body 2 diameter DP 91～95%, even more ideal is 92～94%.

In addition, in the heater 1 of the present invention, for example in the resistance heating volume graphic shown in Fig. 4, in the part of circumscribed circle C, there is the white space P of the circular arc figure that does not have resistance heater 5.Near this white space P subtend connects the interval L1 between the circular arc band 52, preferably less than poor (hereinafter to be referred as making LL) between the diameter D of the diameter of tabular ceramic body and above-mentioned circumscribed circle C.If at interval L1 is greater than difference LL, then might make the hot-fluid of white space P to the periphery of tabular ceramic body, cause the temperature of white space P to descend.But if at interval L1 is less than LL, then the temperature of white space P is difficult to descend, and the temperature of a part that is placed on the periphery of putting the wafer W in the section 3 of tabular ceramic body 2 can not descend yet, thereby can reduce temperature difference in the face of wafer W.

In order not allow the temperature of above-mentioned white space P descend, if allow the resistance of connection circular arc band 52 in heated blank zone equate or big slightly, increase caloric value, the temperature of white space P becomes and can not descend, and makes that temperature is even in the face of wafer W, is very desirable.Under the situation of resistance heater 5 by formation such as print processes, by allowing conduct connect the live width of the connection circular arc band 52 of circular arc band, littler by 1～5% than the live width Wp of circular arc band 51, improve the resistance that connects circular arc band 52, just can increase the resistance that connects circular arc band 52, by like this, allow connect the temperature height of the temperature of circular arc band 52, thereby can allow the interior temperature of face of wafer W even than circular arc band 51.

In addition, in the side's interarea side that with thickness of slab is the tabular ceramic body 2 of 1～7mm, put section 3 as what place wafer, the wafer that is formed with resistance heater 5 below this tabular ceramic body 2 is with in the heater 1, preferably allow the thickness of resistance heater 5 be 5～50 μ m, allowing the ratio of the area of the relative circumscribed circle C of resistance heater 5 area occupied in the circumscribed circle C, is 5～30%.

Also be, if the ratio less than 5% of the area of the relative circumscribed circle C of resistance heater 5 area occupied in the circumscribed circle C, then since resistance heater 5 in interval L1, L2 ... excessive, therefore, put being positioned in the section 3 and do not have the surface temperature of part of top of the part of resistance heater 5, compare lessly with other parts, be difficult to allow the temperature of putting section 3 even.Otherwise if resistance heater 5 area occupied in the circumscribed circle C, the ratio of area that surrounds the circumscribed circle C of resistance heater 5 has relatively surpassed 30%, even then allow thermal expansion difference between tabular ceramic body 2 and the resistance heater 5, is similar to 2.0 * 10 ^-6/ ℃ below, the caused thermal stress of thermal expansion difference also can become greatly, makes 2 distortion of tabular ceramic body, is very unfavorable therefore.Even formed by the ceramic sintered bodies that allows tabular ceramic body 2 be difficult to distortion, because its thickness of slab t is this thin material of 1mm～7mm, therefore, if 5 heatings of tabular heater just it is crooked to allow tabular ceramic body 2 produce, makes and put section 3 sides depression.Consequently, might make that the temperature of central part of wafer W is littler than periphery, increase temperature fluctuation.

In addition, preferably with the ratio of the area of the relative circumscribed circle C of resistance heater 5 area occupied in the circumscribed circle C, be set at 7%～20%, even more ideal is 8%～15%.

More specifically, allow preferably at interval L1 is more than the 0.5mm, and the thickness of slab of above-mentioned tabular ceramic body 2 is below 3 times.If at interval L1 is below the 0.5mm, then when printing forms resistance heater 5, might in the antagonism zone of resistance heater 5, form the projection of palpus shape, allow this partial short circuit.In addition,, then might produce cold spot in the coding corresponding to the wafer W of interval L1, increase temperature difference in the face of wafer W if at interval L1 has surpassed 3 times of thickness of tabular ceramic body 2.

In addition, realize above-mentioned effect, preferably allow the thickness of resistance heater 5 be 5～50 μ m for efficient.

This be because, if the thickness of resistance heater 5 is below the 5 μ m, then be difficult to come uniform film thickness ground printed resistor heater 5 by silk screen print method.In addition, if the thickness of resistance heater 5 has surpassed 5 μ m, even then the ratio of the relative circumscribed circle C of resistance heater 5 area occupied is below 30%, because the thickness of resistance heater 5 is thicker, therefore the rigidity of resistance heater 5 increases, might allow tabular ceramic body 2 be out of shape because of the flexible influence of the caused resistance heater 5 of the variations in temperature of tabular ceramic body 5.In addition, this is owing to be difficult to print out homogeneous thickness in the silk screen printing, might allow the surface temperature difference of wafer W increase.In addition, the thickness of even more ideal resistance heater is 10～30 μ m.

Below the formation of each parts of relevant heater 1 of the present invention is elaborated.

In addition, the present invention is not limited in concrete example shown below.

In the heater 1 of Fig. 1, tabular ceramic body 2 plates for example are that thickness t is 1～7mm, and the Young's modulus under 100～200 ℃ is the plate body of 200～450MPa.

Young's modulus under 100～200 ℃ is the material of the tabular ceramic body 2 of 200～450MPa, can use aluminium, silicon nitride,?, aluminium nitride, wherein, particularly aluminium nitride has more than the 50W/ (mK), even the above high thermoconductivity of 100W/ (mK), simultaneously, superior to the corrosion resistance and the anti-isoiony of corrosive gass such as fluorine class and chlorine class, therefore be very suitable for material as tabular ceramic body 2.

The thickness of tabular ceramic body 2 is if be 2～5mm then desirable more.If the thickness of tabular ceramic body 2 is thinner than 2mm, the intensity of then tabular ceramic body 2 just can reduce, when heating by the heating of resistance heater 5, when being blown to the refrigerating gas of puff prot 24, thermal stress in the time of might bearing cooling causes producing the crack in tabular ceramic body 2.In addition, if the thickness of tabular ceramic body 2 has surpassed 5mm, just the thermal capacity of tabular ceramic body 2 can increase, the time before the temperature stabilization during therefore to heating and cooling might be longer.

Tabular ceramic body 2, periphery at the peristome that substrate shell 19 is arranged, be through with bolt 16, in order to allow tabular ceramic body 2 directly not contact with substrate shell 19 is arranged, and be situated between the contact component 17 of ring-type is arranged, by from substrate shell 19 sides are arranged, be situated between flexible body 18 and spiral shell tightens up a screw 20, carry out flexible fastening.By like this, under the situation of the temperature change of tabular ceramic body 2, even there is substrate shell 19 to deform, also can be absorbed by above-mentioned elastomer 18, by suppressing the bending of tabular ceramic body 2 like this, thereby can be suppressed at wafer surface, produce crooked caused temperature fluctuation because of tabular ceramic body 2.

The section of ring-type contact component 17 can be polygon or circle, under the situation of tabular ceramic body 2 and contact component 17 plane contact, if tabular ceramic body 2 is 0.1mm～13mm with the width of contact component 17 contacted contact sites, just the heat that can reduce tabular ceramic body 2 flows to amount in the substrate shell 19 through contact component 17.Like this, can reduce the interior temperature difference of face of wafer W, thereby can evenly heat wafer W.That even more ideal is 0.1～8mm.If the width of the contact site of contact component 17 is below the 1mm, when contacting fixedly with tabular ceramic body 2, contact site might be out of shape, thereby causes the contact component breakage.In addition, surpassed under the situation of 13mm at the width of the contact site of contact component 17, the heat of tabular ceramic body 2 just can flow in the contact component, allows the temperature of periphery of tabular ceramic body 2 descend, thereby is difficult to wafer W is evenly heated.Even more ideal is allows the contact component 17 and the width of the contact site of tabular ceramic body 2 be 0.1mm～8mm, if be 0.1～2mm then better.

In addition, the pyroconductivity of contact component 17 is preferably less than the pyroconductivity of tabular ceramic body 2.If the pyroconductivity of contact component 17 is less than the pyroconductivity of tabular ceramic body 2, just can the Temperature Distribution in the wafer W face of being placed in the tabular ceramic body 2 evenly be heated, simultaneously, when the temperature of tabular ceramic body 2 rises or descends, can reduce and contact component 17 between amount of thermal conduction, reduce with the heat between the substrate shell 19 is arranged and disturb, thus can easily rapid changing temperature.

The pyroconductivity of link 17, if less than 10% of the pyroconductivity of tabular ceramic body 2, the heat of tabular ceramic body 2 just is difficult to flow in the substrate shell 19, heat transfer and radiant heat transfer because of environmental gas (being air here), to substrate shell 19 mobile more heat are arranged, this is very unfavorable from tabular ceramic body 2.

Under the situation of pyroconductivity greater than the pyroconductivity of tabular ceramic body 2 of contact component 17, the heat of the periphery of tabular ceramic body 2 has flow in the substrate shell 19 through contact component 17, to there being substrate shell 19 to heat, simultaneously, the temperature of the periphery of tabular ceramic body 2 descends, temperature difference increases in the face of wafer W, and is very undesirable.In addition, owing to have substrate shell 19 to be heated, thereby come cooling plate-like ceramic body 2, but owing to there is the temperature of substrate shell 19 higher from puff prot 24 gas jet, therefore cooling time more, being warmed up to the needed time of certain temperature when heating increases possibly.

In addition, to constitute the material of above-mentioned contact component 17, in order keeping by less contact site, preferably to allow the Young's modulus of contact component be more than the 1GPa, even more ideal is more than the 10GPa.By adopting such Young's modulus, be this little contact site of 0.1mm～8mm by width, with tabular ceramic body 2 through contact component 17 when being bolted in the substrate shell 19, can reduce the distortion of contact component 17.By like this, can prevent that tabular ceramic body 2 from dislocation taking place or the depth of parallelism changes, thereby can high accuracy keep.

In addition, by using the higher contact component 17 of Young's modulus, described in patent documentation 2, can realize by being added with the precision that contact component can not get that resin constituted of fluorine-type resin or glass fibre.

As the material of above-mentioned contact component 17, carbon steel that iron and carbon constituted and the metals such as special steel that are added with nickel, manganese, chromium, because it is Young's modulus is bigger, therefore comparatively desirable.In addition, as the pyroconductivity materials with smaller, the so-called Kovar alloy of stainless steel and Fe-Ni-Co class alloy is comparatively desirable, preferably selects the material of contact component 17, makes the pyroconductivity of tabular ceramic body 2 less.

In addition, in order to keep in touch parts 17 and tabular ceramic body 2 by less contact area, even and the area of contact site is less, contact site is damaged and to produce the possibility of particle less, the tabular ceramic body 2 of maintenance that can be stable preferably allows the section that blocks tabular ceramic body 2 resulting contact components 17 by vertical plane be polygon or circle.In addition, if with profile diameter be round wire below the 1mm as contact component 17, can not change tabular ceramic body 2 and the position of substrate shell 19 is arranged, and allow the cooling that evenly and rapidly heats up of the surface temperature of wafer W.

Next, there is substrate shell 19 to have side wall portion 22 and bottom surface 21, tabular ceramic body 2 is covered on this peristome that substrate shell 19 is arranged.In addition, have to be provided with the sky 23 that is used for discharging refrigerating gas in the substrate shell 19, and be provided be used for conducting be used for to the power supply 6 of resistance heater 5 power supply of tabular ceramic body 2 power supply terminal 11, be used for the puff prot 24 and being used for of cooling plate-like ceramic body 2 and measure the thermoelectricity of temperature of tabular ceramic body 2 27.

In addition, preferably allow the degree of depth of substrate shell 19 be 10～50mm, bottom surface 21 is arranged on has tabular ceramic body 210～50mm place.That even more ideal is 20～30mm.This be because, by tabular ceramic body 2 and the mutual thermal radiation that substrate shell 19 is arranged, can easily allow and put section 3 thermally equivalents, also have the effect with external insulation simultaneously, therefore can shorten allowing the temperature of putting section 3 reach certain needed time of temperature.

Afterwards, by be arranged in the substrate shell 19 can free lifting picker 25, carry out wafer W is placed on put on the section 3, from putting the operation that section 3 is mentioned.Like this, wafer W remains from putting the state that section 3 floats by wafer anchor 8, thereby can prevent that folk prescription contact etc. from causing temperature fluctuation.

In order heating, to support to transport to the wafer W of putting on the section 3 in addition, afterwards, to allow picker 25 descend, wafer W is placed on puts on the section 3 by transferring arm (not shown) by picker 25 by 1 pair of wafer W of this heater.

Next; when heater is used for film forming; if the main component of tabular ceramic body 2 is a carborundum; since not can with the generation gases that react such as moisture in the atmosphere; therefore used as on wafer W, pasting diaphragm; bring harmful effect can for the tissue of diaphragm yet, and can high density form trickle wiring.At this moment, need allow not containing in the sintering aid to react with water produces the nitride of ammonia, amine.

In addition, form the carborundum sintered body of tabular ceramic body 2, can be by in main component carborundum, add boron (B) and carbon (C) as sintering aid, or add alundum (Al (A12O3), yittrium oxide metal oxides such as (Y2O3), and fully mix, be processed into after the tabular, burning paper as sacrificial offerings by 1900～2100 ℃ forms.Carborundum both can be based on the α type, again can be based on the β type.

In addition,, can use glass or resin, as keeping having the tabular ceramic body 2 of semiconduction and the insulating barrier of the insulation between the resistance heater 5 in that carborundum sintered body is used as under the situation of tabular ceramic body 2.Under the situation of using glass, if its thickness is discontented with 100 μ m, proof voltage just can become below the 1.SkV, thereby can't keep insulating properties, otherwise, if thickness has surpassed 400 μ m, can be excessive just form the carborundum sintered body and the thermal expansion difference between the aluminum nitride sintered product of tabular ceramic body 2, therefore can produce the crack, thereby still lose function as insulating barrier.Therefore, using under the situation of glass as insulating barrier, the thickness of insulating barrier is preferably formed in the scope of 100～400 μ m, and even more ideal is in the scope of 200 μ m～350 μ m.

In addition, the interarea of the opposition side of putting section 3 of tabular ceramic body 2, from the viewpoint of the adaptation between the made insulating barrier of raising and glass or resin, preferably grinding to form flatness is below the 20 μ m, and the center line average roughness of surface roughness (Ra) is 0.1 μ m～0.5 μ m.

In addition, tabular ceramic body 2, by being under the sintered body of the main component situation about forming with the aluminium nitride, can be in the main component aluminium nitride, add rare earth element oxides such as Y2O3 or Yb2O3 as sintering aid, can also add alkali earths element oxides such as CaO as required, and fully mix, be processed into after the tabular, in nitrogen, fire and form by 1900～2100 ℃.In order to improve the adaptation between tabular ceramic body 2 and the resistance heater 5, sometimes also form the insulating barrier that glass is made.But, in resistance heater 5, having added sufficient glass, under the situation that has obtained enough dhering strengths like this, also can omit.

Characteristic as the glass that forms this insulating barrier, can be crystalline or noncrystalline, preferably selecting heat resisting temperature for use is more than 200 ℃, and the thermal coefficient of expansion in 0 ℃～200 ℃ temperature province, and the thermal coefficient of expansion that constitutes the pottery of tabular ceramic body 2 relatively is-5～+ 5 * 10 ^-7/ ℃ scope in material.Also promptly, if use thermal coefficient of expansion to exceed the glass of above-mentioned scope because and the thermal expansion difference that forms between the pottery of tabular ceramic body 2 excessive, therefore during the cooling after the firing of glass, be easy to generate defectives such as crack or glass.

In addition, as the method that covers tabular ceramic body 2 on the insulating barrier of supporting at glass, above-mentioned glass paste can be dropped in right amount the central part of tabular ceramic body 2, make its expansion by spin-coating method, thereby evenly coating, or, glass paste is fired by the temperature more than 600 ℃ by after the even coating such as silk screen print method, infusion process.In addition, using under the situation of glass as insulating barrier, can be heated to the temperature of 850～1300 ℃ of degree in advance carborundum sintered body or the made tabular ceramic body 2 of aluminum nitride sintered product, oxidation processes is implemented on the surface that is coated with insulating barrier, by improving the adaptation between the made insulating barrier of itself and glass like this.

The graphics shape of resistance heater 5 of the present invention preferably as Fig. 3 or shown in Figure 4, is divided into a plurality of districts, and the helical form that each district is made of circular arc figure and linear figure is with the shape formation of turning back of complications.Heater 1 of the present invention, it is extremely important that wafer W is evenly heated this point, and therefore, these graphics shapes are that the density of each one of banded resistance heater 5 is preferably uniform.But, as shown in figure 20, mind-set radiation direction from tabular ceramic body 22, in the closeer part in the interval of resistance heater 772 and the mutual resistance heating volume graphic that occurs of thicker part, because thicker part produces uneven, therefore very undesirable in the surface temperature of wafer W with closeer part.

In addition, resistance heater 5 being cut apart under the situation that forms a plurality of resistance heating body region, preferably, evenly heat the wafer W of putting on the section 3 by each regional temperature is carried out independent control.

Resistance heater 5 can use and will contain the electrode slip of glass dust or metal oxide in the conductive metal particle, is printed onto on the tabular ceramic body 2 and fires and the former by print process.Metallic preferably uses at least a metal among Au, Ag, Cu, Pd, the Rh, in addition, glass dust, preferably use by the oxide that contains B, Si, Zn formed, than the thermal coefficient of expansion of tabular ceramic body 2 little 4.5 * 10 ^-6/ ℃ below low-expansion glass.In addition, metal oxide, preferably use from silica, boron oxide, aluminium oxide, titanium dioxide selected go out a kind of.

Here, forming the metallic of resistance heater 5, why use at least a metal among Au, Ag, Cu, Pd, the Rh, is because resistance is less.

Form the glass dust of resistance heater 5, formed by the oxide that contains B, Si, Zn, be because the thermal coefficient of expansion of metallic that constitutes resistance heater 5 greater than the thermal coefficient of expansion of tabular ceramic body 2, therefore, in order to allow the thermal coefficient of expansion of resistance heater 5 near the thermal coefficient of expansion of tabular ceramic body 2, and preferably use thermal coefficient of expansion than tabular ceramic body 2 little 4.5 * 10 ^-6/ ℃ below low-expansion glass.

In addition, form the metal oxide of resistance heater 5, preferably use from silica, boron oxide, aluminium oxide, titanium dioxide selected go out a kind of, be because and resistance heater 5 in metallic between adaptation better, and thermal coefficient of expansion is near the thermal coefficient of expansion of tabular ceramic body 2, and the adaptation between the tabular ceramic body 2 is better.

But, for resistance heater 5, if the content of metal oxide has surpassed 80%, though increased and resistor ceramic body 2 between closing force, the resistance value of resistance heater 5 also increases, and is therefore very undesirable.So the content of metal oxide is preferably in below 60%.

Like this, the resistance heater 5 that conductive metal particle and glass dust and metal oxide are constituted, preferably the thermal expansion difference between use and the tabular ceramic body 2 is 3.0 * 10 ^-6/ ℃ below material.

Also promptly, if the thermal expansion difference between resistance heater 5 and the tabular ceramic body 2 is 0.1 * 10 ^-6/ ℃, then be difficult to make, otherwise, if the thermal expansion difference between resistance heater 5 and the tabular ceramic body 2 has surpassed 3.0 * 10 ^-6/ ℃, then at resistance heater 5 adstante febres, might owing to and tabular ceramic body 2 between the thermal stress that acted on, allow and put the bent concavity of section 3 lateral bendings.

In addition, cover the material of the resistance heater 5 on the insulating barrier, can be with gold (Au), silver (Ag), copper (Cu), palladium metal monomers such as (Pd), directly cover by vapour deposition method or galvanoplastic, or prepare above-mentioned metal monomer and rheium oxide (Re2O3), lanthanum manganate conductive metal oxides such as (LaMnO3) and above-mentioned metal material are dispersed in slip in resin slip or the glass slip, fire after being printed as given figure by silk screen print method etc., above-mentioned electric conducting material is carried out combination by resin or the formed matrix of glass.Using under the situation of glass as matrix, both can be crystal glass, can be again non-crystal glass, but, preferably use crystal glass in order to suppress the variation of the resistance value that thermal cycle causes.

But, material at resistance heater 5 uses under the situation of silver (Ag) or copper (Cu), owing to might produce migration, and therefore in this case, preferably allow by the formed coating of the material identical with insulating barrier, the thickness by 40～400 μ m degree covers resistance heater 5 get up.

In addition,, can will be arranged on power supply terminal in the substrate shell 19, be pressed onto on the surperficial formed power supply 6 of tabular ceramic body 2, and guarantee to connect and power by spring (not shown) to the method for supplying power to of resistance heater 5.This be because, if in the thick tabular ceramic body 2 of 2～5mm, bury the formed portion of terminal of metal underground, just can cause thermal uniformity to worsen because of the thermal capacity of this portion of terminal.Therefore, as mentioned above, guarantee to be electrically connected by spring pushing power supply terminal 11, can relax tabular ceramic body 2 and this has the caused thermal stress of temperature difference between the substrate shell 19, keeps electrically conducting by high reliability.And then, becoming a contact in order to prevent contact, the rubber-like conductor can also be inserted as the intermediate layer.This intermediate layer only is that the thin slice that inserts the paper tinsel shape just can play effect.Like this, the diameter of power supply 6 sides of power supply terminal 11 is preferably 1.5～5mm.

In addition, the temperature of tabular ceramic body 2 can be measured 27 by the thermoelectricity that front end is embedded in the tabular ceramic body 2.Thermoelectric to 27, from the viewpoint of the operation of its responsiveness and maintenance, preferably use external diameter as the sheath shape thermoelectricity below the 0.8mm to 27.Form the hole in tabular ceramic body 2, this thermoelectricity is to 27 leading section, and by wherein set fixed part, pushing is fixed in the internal face in hole, and this is highly beneficial for the reliability that improves thermometric.Equally, can also bury underground wire rod thermoelectricity to or temperature detecting resistance body such as Pt, carry out thermometric.

In addition, in tabular ceramic body 2 one sides' the interarea, as shown in Figure 1, be provided with a plurality of anchors 8, can pass through a side's of tabular ceramic body 2 interarea, in certain distance, keep wafer W.

In addition, shown in the opposing party's interarea 3 of tabular ceramic body 2 only have the heater 1 of resistance heater 5 among Fig. 1, but among the present invention, can also between interarea 3 and resistance heater 5, bury the electrode that is used for Electrostatic Absorption and plasma generation certainly underground.

Execution mode 2

The heater of related embodiment 2 of the present invention, in the heater 1 of execution mode 1, temperature element 27 the position is set, determine in the relation between resistance heater 5 and power supply 6 that in addition the formation with the heater 1 of execution mode 1 is identical.In addition, in the execution mode 2, even more ideal concrete form is identical with execution mode 1.In addition, in the accompanying drawing of institute's reference, give with execution mode 1 identical parts and mark identical symbol in the explanation of execution mode 2.

Also be, the heater of related embodiment 2 of the present invention with side's interarea of tabular ceramic body 2, is put section (heating surface) 3 as the heating heating object, within it in portion or the opposing party's interarea, resistance heater 5 turn back form by a plurality of circular arc bands be connected the U word figure that the circular arc band is constituted.Temperature element 27 following settings of the temperature of tabular ceramic body 2 and mensuration heating object.Here, particularly, in the heater of present embodiment 2, be characterised in that the power supply 6 that is connected with the two ends of resistance heater 5, be provided with outside the annulus resistance heating body region, temperature element 27 is located among the annulus resistance heating body region, by like this, can reduce as daily temperature difference in the face of the wafer W of heating object, in addition, when transition, can reduce temperature difference in the wafer face.

Shown the equipping position of resistance heater 5 and power supply 6 and temperature element 27 in the heater of execution mode 2 among Fig. 5, compared with Fig. 2 of execution mode 1, the position difference of power supply 6, and clearly demonstrated the position of temperature element 27.Also promptly, in the heater of execution mode 2, as shown in Figure 5, two power supplies 6 are arranged on the inside of the inscribed circle C1 of resistance heater 5, are connected respectively with the end of resistance heater 5 by supply lines 6a.In addition, temperature element 27 is arranged in the resistance heating body region in the zone between the circumscribed circle C2 of the inscribed circle C1 that is defined as resistance heater 5 and resistance heater 5.In addition, the concrete formation of resistance heater 5, identical with the formation with reference to the illustrated resistance heater of Fig. 2 in the execution mode 1, therefore omit its explanation.

In addition, the power supply 6 that resistance heater 5 is powered need be connected reliably with power supply terminal 11, and in order not play the effect of heat generating part, preferably uses the resistance materials with smaller, and makes its width than band portion big, thereby controls resistance value less.Afterwards, for the heating surface 3 to tabular ceramic body 2 carries out center symmetry heating,, can reduce the interior temperature difference of face of wafer by with adjacent setting outside power supply 6 and the annulus resistance heating body region.In addition, by in annulus resistance heating body region, temperature element 27 being set, can keep the heating-up temperature of resistance heater 5 opposed sections 3 correct, thereby can reduce delay and the temperature measurement error of the temperature measuring time of wafer W.In addition, being connected between the end of power supply 6 and resistance heater 5, preferably the lead-in wire by the resistance value broad littler than resistance heater 5 connects.And power supply 6 best scolders are welded on the power supply terminal 11, or connect by the pushing contact.

In addition, power supply 6, preferably wide circle or polygon than the band portion of resistance heater 5, help like this and power supply terminal 11 between connection.In addition, in the heater of being put down in writing in the patent documentation 8, temperature element is arranged on independently between the rectangle resistance heater, thereby be difficult to accurately control the independently temperature of resistance heater, can't reduce the temperature difference in the wafer face, in this point, thought of the present invention is completely different.

Among Fig. 5, power supply 6 is arranged on inboard (among the inscribed circle C1) in addition, but is arranged on the outside (outside of circumscribed circle C2), also can obtain same effect certainly.

Execution mode 3

Fig. 7 A is the profile of the formation of the heater 300 of explanation related embodiment 3 of the present invention.

The heater 300 of this execution mode 3, shown in one example among Fig. 7 A, the B, be characterised in that, be provided with peripheral protuberance 304 more than 3 at the periphery of putting section 3, have in the inboard of peripheral protuberance 304 aspect ratio should the periphery protuberance 304 low inner projection (wafer anchor) 8, above-mentioned peripheral protuberance 4 is retained as and can moves in the radial direction of tabular ceramic body or at least one direction in the vertical direction.In the execution mode 3, except that above-mentioned point, all the formation with execution mode 1 grade is identical.

Also be, execution mode 3 is shown in Fig. 8 A～8B, between the bolt 10 of the fixing hole 12 of peripheral protuberance 304 and fixing peripheral protuberance 304, be provided with the space, allow the peripheral protuberance 304 can be in the radial direction and the mobile distance that is equivalent to this space of this two side of vertical direction of tabular ceramic body.

Shown in the heater described in the patent documentation 10,11, owing to prevent the circular arc protuberance of wafer W translation, thickness than the periphery of tabular ceramic body is big, therefore exist the thermal capacity of the periphery of tabular ceramic body to increase, temperature difference increases this problem in the wafer W face during transition in temperature-rise period.But, as the heater 300 of present embodiment 3, isolated peripheral protuberance 304 being set by periphery at tabular ceramic body 2, temperature difference increases in the wafer W face in the time of can preventing transition, and can correctly prevent the translation of wafer W.

When making wafer W in putting section 3, the location that peripheral protuberance 304 is used for carrying out wafer W is essential, but has also played the effect of temperature difference in the increase face.Also promptly, peripheral protuberance 304 itself just has certain thermal capacity, and when heated chip W, heat flow to the shell 19 through bolt 10 from peripheral protuberance 304, therefore might increase the interior temperature difference of face of wafer W.So, preferably have and be used for reducing the mechanism that flows to the heat the bolt 10 from peripheral protuberance 304.Therefore, in the present embodiment 3, the space is set putting between the fixing hole 12 of fixing peripheral protuberance 304 on the section 3 and the bolt 10, thereby makes from peripheral protuberance 304 to the heat transfer of bolt 10 difficulty comparatively.Therefore, in the heater of present embodiment 3, the heat that flows in shell 19 and the link 17 through bolt 10 reduces, and can prevent that the peripheral temperature of peripheral protuberance 304 from descending.As bigger space, if allow the difference between the external diameter of the diameter of through hole and bolt be 0.3～2mm, just have good effect of heat insulation.That even more ideal is 0.5～1.5mm.

In addition, in the present embodiment 3,, be preferably in and form through hole 309 in the tabular ceramic body 2 for temperature difference in the face that further reduces wafer W, allow bolt 10 from this through hole 309 by fixing, by preventing that so the peripheral protuberance 304 and the translation of tabular ceramic body 2 from being very desirable.In addition, if peripheral protuberance 304 is securely fixed on the tabular ceramic body 2 by bolt 10, tabular ceramic body 2 just can increase with the following pyroconductivity of peripheral protuberance 304, the heat of tabular ceramic body 2 flows in the shell 19 through bolt 10, might allow the temperature of peripheral protuberance 304 tabular ceramic body 2 on every side descend, cause the temperature of wafer W also to descend.Therefore, had better not will firmly couple together between peripheral protuberance 304 and the tabular ceramic body 2, but by preventing that the intensity of this degree of translation is fixed up by bolt 10.Specifically, preferably allow peripheral protuberance 304 can move 0.3～2mm degree all around.If connect like this, can also reduce the contact area between bolt 10 and the peripheral protuberance 304, thereby make the heat dissipation channel through peripheral protuberance 304 become narrow, be very desirable.In the present embodiment 3,, can keep putting the uniformity of temperature profile of section 3 by constituting like this, thus the temperature difference in the wafer W face can reduce the transition in temperature when change the time.

In the manufacturing of this execution mode 3, wafer W is moved by not shown transferring arm, be placed into from tabular ceramic body 2 put the section 3 on the outstanding picker 25 after, allow picker 25 descend, guided by peripheral protuberance 4, wafer W is placed in the inner recess 8 of putting on the section 3 simultaneously.In addition,, make the center of wafer consistent, thereby it is extremely important accurately to place the wafer W this point with the center of tabular ceramic body 2 for temperature difference in the face that reduces wafer W.Therefore, best peripheral protuberance 304 is as wafer guiding, allows the channeling conduct that contacts with peripheral protuberance 304 of wafer W on one side on every side, supports by inner projection 8.

Fig. 8 A～Fig. 8 D is the amplification profile of local enlargement display periphery protuberance 304.The peripheral protuberance 304 that has shown truncated cone among Fig. 8 A.Fig. 8 B has shown on cylinder the peripheral protuberance 4 in conjunction with the resulting shape of the frustum of a cone.Fig. 8 C has shown that periphery is by peripheral protuberance 304 that curved surface constituted.Fig. 8 D has shown the peripheral protuberance 304 of cylindrical shape.

Among the present invention, the section shape of putting section 3 that is parallel to peripheral protuberance 304 is preferably circular, by adopting this shape, can dwindle peripheral protuberance 304, reduces the peripheral temperature of heater portion 7, allows in addition install also become easier.

In addition, peripheral protuberance 304 is preferably column, and the diameter at top is less, and the diameter of bottom surface is bigger.If the diameter at top is less like this, even wafer W dislocation will take place and be placed on to put on the section 3, also can guide the position of wafer W along the inner face of peripheral protuberance 304, wafer W is placed on the correct position.

In addition, in the heater 300 of the present invention,, in shell 19, preferably has nozzle 24 and discharge opening 23 from the refrigerating gas of nozzle 24 ejections for to heater portion 7 and by the inner face circulation refrigerating gas that shell 19 is surrounded.By having such nozzle 24 and opening 23, can strengthen the cooling rate of heater 1, be very desirable.

In addition, the average surface roughness Ra of the outer peripheral face of peripheral protuberance 304 is preferably less than 3.If surface roughness Ra surpasses 3.0, then when contacting with the peripheral end face of wafer W and correcting the wafer W position, because and the friction between the wafer W, might allow the wafer W wearing and tearing, produce particle, thereby might reduce the rate of finished products of wafer W.In addition, if average surface roughness Ra is below 0.01, just be difficult to carry out the Surface Machining of peripheral protuberance 304.

In addition,, to have 3 peripheral protuberances 304 on the same circumference at least in order to prevent the transverse shift of wafer W by peripheral protuberance 304, with the diameter of the inscribed circle that connects in the peripheral protuberance 304 be preferably wafer W diameter 1.001～1.03 by size.Even more ideal is 1.001～1.02 times.By being provided with like this, wafer W can be placed on the tram of putting on the section 3, evenly receive the heat of putting section 3, thereby the surface temperature that can reduce wafer W is poor from tabular ceramic body 2.More specifically be, if diameter is the silicon wafer of 200mm, the diameter of the inscribed circle of peripheral protuberance 304 is preferably 200.2～206mm, if use the wafer W of diameter 300mm, the diameter of above-mentioned inscribed circle is preferably 300.3～309mm.That even more ideal is 200.2～204mm, 300.3～306mm.

Peripheral protuberance 304 of the present invention is made of the ceramic component of circle, and the thermal capacity of this ceramic component is preferably less than 3 times corresponding to the thermal capacity of above-mentioned peripheral protuberance 304 and the above-mentioned tabular ceramic body 2 of 2 contacted of above-mentioned tabular ceramic bodies.Peripheral protuberance 304 is placed on tabular ceramic body 2 periphery above.Therefore, for evenly heating of surface to wafer W, the Temperature Distribution of putting section 3 of tabular ceramic body 2 is extremely important, be provided with peripheral protuberance 304 if put the periphery of section 3, just can be corresponding to the thermal capacity of peripheral protuberance 304, conduct heat to peripheral protuberance 304 from tabular ceramic body 2, or conduct heat to tabular ceramic body 2 from peripheral protuberance 304.By moving of this heat, the temperature of the tabular ceramic body 2 around the peripheral protuberance 304 can raise or reduce.Like this, mainly conduct heat by contact-making surface 304a, the 303a of peripheral protuberance 304 with tabular ceramic body 2.Temperature difference is below 0.5 ℃ in the face often of wafer W in order to allow, and temperature difference in the face when reducing transition preferably allows the thermal capacity of this periphery protuberance 304 less.If less than with contact-making surface 303a 3 times,, reduce the possibility that temperature difference increases in the face of wafer W just can reduce heat transfer as the thermal capacity of the cylindrical portion 2a of top tabular ceramic body 2.

In addition, even prevent the translation of tabular ceramic body 2 by above-mentioned bolt 10, tabular ceramic body 2 also might be offset up and down, therefore, as shown in Figure 9, preferably pushes down the periphery of tabular ceramic body 2 by retainer 29.In addition, in order to prevent to conduct heat to shell 19 from retainer 29, preferably the protuberance 29a by retainer 29 carries out a pressure.In addition, retainer 29 preferably has 3～5 places.

Like this, put the interval of section and wafer W, by keeping by 8 pairs of wafer W supports of inner recess, but even as far as possible for the interval that allows the wafer W face and put between the section 3, preferably allow inner recess 8 equalizations be arranged on and put in the section 3.Inner projection 8, if from the center of putting section 3 to peripheral protuberance 304 in 0.5 times of scope of diameter of the inscribed circle that connects, at least be provided with 1, in 0.5～1 times scope of the diameter of above-mentioned inscribed circle, be provided with 3 at least, just can reduce the distortion on wafer W surface, and evenly support, owing to can also prevent the caused distortion of deadweight or the bending of wafer W, therefore can reduce the interior temperature difference of face of wafer W, very desirable.

In addition, wafer W is put section 3 through inner projection 8 to keep apart between certain, by like this, can prevent with put the situation that section 3 directly contacts under folk prescription contact the generation of temperature fluctuation in the face of caused wafer W.Like this, wafer W is heated, can allow the interior temperature of face of wafer W evenly heat up, thereby can evenly keep the interior temperature of face of wafer W by gas through putting on the section 3.

For the surface temperature that reduces wafer W poor, from preventing wafer W and putting the meshing of particle between the section 3, the variations in temperature this point that prevents to put the caused wafer W of delicate distortion of section 3 is set out, and the height that allows decision wafer W and the inner projection 8 of putting the interval between the section 3 give prominence to from put section is that 0.05～0.5mm is very appropriate.If be below the 0.05mm, can sharply be delivered in the wafer W just put the temperature of section 3, cause the interior temperature difference of face of wafer W to increase.In addition, if surpassed 0.5mm, just can be slack-off from putting section 3 to the heat transmission of wafer W, cause the interior temperature difference of face of wafer W to increase.That even more ideal is 0.07～0.02mm.

In addition, better with contacted connecting portion 17 effect of heat insulation of cylindrical portion 2a, can suppress heat transmission, therefore, discuss extremely important according to the relation between peripheral protuberance 304 and the tabular ceramic body 2.In addition, the diameter of peripheral protuberance 304 is preferably 5～15mm, and that even more ideal is 7～11mm.In addition, highly be preferably 3～14mm.In addition, it is very desirable having tapering in the outer peripheral face in the form of Fig. 8 A, Fig. 8 B, Fig. 8 C, but also can be shown in Fig. 8 D, and periphery is cylindrical.In addition, these peripheral protuberances 304 are preferably in its inboard space 4b of formation.This is because by forming such a space, can reduce the thermal capacity of peripheral protuberance 304.In addition, if the average surface roughness Ra of the bottom surface 304a of peripheral protuberance 304 is 0.1～10, and the average surface roughness Ra of tabular ceramic body 2 and contact-making surface equally also is 0.1～10, just can reduce the heat conduction from contact-making surface, is very desirable.

In addition, the pyroconductivity of the peripheral protuberance 304 of tabular ceramic body 2 preferably has the following pyroconductivity of twice of the pyroconductivity of tabular ceramic body 2.If the pyroconductivity of peripheral protuberance 304 has surpassed the twice of the pyroconductivity of tabular ceramic body 2, just the temperature of peripheral protuberance 304 be easy to rise, thereby temperature difference strengthens in the face of the wafer W the during transition might allow heated chip W the time.Even more ideal is if further dwindle the pyroconductivity of tabular ceramic body 2, to descend or rise just can reduce peripheral protuberance 304 temperature on every side.

In addition, poor for the surface temperature that reduces wafer W, preferably allow the part of peripheral protuberance 304, be positioned at the inside of the circumscribed circle of the resistance heater 5 that surrounds tabular ceramic body 2.By adopting such configuration, can be by resistance heater 5, the section 3 of putting of the scope that the surface area of contrast wafer W is big heats, and therefore can reduce the interior temperature difference of face of wafer W, is very desirable.

The configuration example that has shown the resistance heating body region 4 of the tabular ceramic body among the present invention among Figure 10 A is the example of simplifying than example shown among Fig. 3 A etc.

In the example of this Figure 10 A, central part has circular resistance heating body region 304a, the concentrically ringed annulus resistance heating of its exterior lateral area body region 304bc and annulus resistance heating body region 304dg.

Figure 10 B is in the example of Figure 10 A, annulus resistance heating body region 304bc2 five equilibrium with the outside, obtain semicircular two resistance

heating body region

304b, 304c, and then with the annulus resistance heating body region 304dg4 five equilibrium outside it, obtain fan-shaped 4 resistance

heating body region

304d, 304e, 304f, 304g, like this, can allow the surface temperature of wafer W more even, be very desirable.

In the example of Figure 10 B, each resistance heating body region 304a～304g of above-mentioned heater 1 forms corresponding and disconnected from each other resistance heater 5a～5g respectively, and each resistance heating body region 304a～304g preferably can independently control.

In addition, in the example of Figure 10 B, annulus resistance heating body region 304bc, 304dg 2 are cut apart on the radiation direction respectively, 4 cut apart, be not limited in this but cut apart number.

The line of demarcation of resistance

heating body region

304b, 304c shown in Figure 10 B is a straight line, but does not need one to be decided to be straight line, can also be wave-like line.Resistance

heating body region

304b, 304c, the preferably center of tabular relatively ceramic body 2 and center symmetry.

Equally, resistance

heating body region

304d and 304e, 304e and 304f, 304f and 304g, 304g and 304d line of demarcation does not separately need one to be decided to be straight line yet, each resistance heater 304d to 304g, the preferably center of tabular relatively ceramic body 2 and center symmetry.

Execution mode 4

Heater to related embodiment 4 of the present invention describes below.

Figure 11 A is the stereogram of the formation of the heater 400 of explanation execution mode 4, and Figure 11 B is the summary profile of X '-X line of Figure 11 A.The heater 400 of present embodiment 4, identical with execution mode etc., have by being the tabular ceramic body 2 that pottery was constituted of main component with carborundum or aluminium nitride, one side's interarea is put section 403 for what place wafer W, but that the inside of tabular ceramic body 402 is not buried resistance heater 405 this point of coiled type underground is different with execution mode 1～3.In addition, in the heater 400 of execution mode 4, measure the temperature element 427 of the temperature of putting section 403 or wafer W, be inserted in the recess set in the opposing party's interarea of tabular ceramic body 402.

In addition, tabular ceramic body 402 has through hole 415, by picker set in this through hole (not shown), can move up and down wafer W, allows wafer W placement/decline in putting section 403.

Resistance heater 405 by the wire rod that alloy of tungsten, molybdenum or tungsten and molybdenum etc. is made, revolves into coiled type and constitutes, and this coiled type bending wire is embedded in the inside of tabular ceramic body 402.The two ends of coiled type wire rod (resistance heater 405) are connected with power supply 406.This power supply 406 is connected with mistake power supply terminal 411.Between power supply terminal 411 and the power supply 406,, also can use methods such as scolding tin installation, scolder installation, bolt if having the method that to guarantee conducting.Like this, can be from the outside to power supply terminal 411 power supplies, measure the temperature of tabular ceramic body 402 by temperature element 427, wafer W is heated to desired temperature.

In the ceramic heater 400 of present embodiment 4, be embedded with side's interarea of tabular ceramic body 402 of the resistance heater 405 of coiled type, put section 403 for what place tabular heating object.

In the execution mode 4, the resistance heater 405 of coiled type, as shown in figure 12, formation is the concentric circles at center with a bit (below be called symmetrical centre) on the central shaft of tabular ceramic body 402, and, be embedded in the inside of tabular ceramic body 402 about by this center and be parallel to 1 straight line of putting section 403 (below be called symmetry axis) and the substantial line symmetry.

Below, in detail the formation to coiled type resistance heater 405 describes, but for convenience of explanation, will be corresponding to 7 circles of the position of the circular arc shaped portion that disposes resistance heater 405, be defined as the 1st～the 7th circle in turn from the inboard, use this defined circle to describe.

In addition, in the following description, in tabular ceramic body 402, the one-sided semicircle zone that is set in symmetry axis is the 1st zone, and the semicircle zone that is positioned at opposition side is the 2nd zone.

In the execution mode 4, be arranged on the power supply 406 at the two ends of coiled type resistance heater 405, be configured near the center of tabular ceramic body 402.Like this, at first justify the coiled type resistance heater 405 that is connected with side's power supply 406 is set along the 1st of the 1st zone, form the 1st arc sections 405i, turn back in the 1st zone by reflex part 405q, follow-up part is provided with along the 2nd circle in the 1st zone, forms the 2nd arc sections 405j.Below, turn back by

reflex part

405r, 405s, 405t, 405u, 405v in turn, with the 3rd arc sections 405k, the 4th arc sections 405L, the 5th arc sections 405m, the 6th arc sections 405n, the 7th arc sections 405o, be arranged in the 1st zone along the 3rd circle～the 7 circle respectively.In addition, the 7th arc sections 405o of most peripheral does not turn back, but is connected with the 7th arc sections 405o in the 2nd zone.

In the 2nd zone also with the 1st zone in the same, turn back by

reflex part

405q, 405r, 405s, 405t, 405u, 405v in turn, with the 2nd arc sections 405j, the 3rd arc sections 405k, the 4th arc sections 405L, the 5th arc sections 405m, the 6th arc sections 405n, the 7th arc sections 405o, be arranged in the 2nd zone along the 2nd circle～the 7 circle respectively.The 1st the most built-in arc sections 405i is provided with along the 2nd circle, and the power supply 406 of its front end is arranged near the center of tabular ceramic body 402.Here, arc sections is meant, the center line that is rolled into the wire rod of coil (spiral) shape forms circular arc, in other words, be meant this circular arc center line around, the part of wire coil curl.

As mentioned above, in the present embodiment 4, in the 1st zone and the 2nd zone, the concentric semicircles arch section that is connected by reflex part is set respectively, and axial symmetry disposes with the semicircular arc in the 2nd zone relative symmetry axis of part to allow the 1st zone.

Like this, be characterised in that in the present embodiment 4, allow face mutually a pair of turn back between the 405q～405v of shape portion apart from d401～d406, respectively less than the distance between the adjacent arc sections (at interval) L401～L406.By like this, will be essentially concentrically ringed a plurality of circular part, can constitute by the resistance heater 405 that connects into 1, temperature difference is below 3 ℃ in the face of the wafer W that should heat thereby can allow.

In addition, between back-shaped 405q～405v of 1 doubling of facing mutually apart from d401～d406, as shown in figure 12, be between the 405q of the shape portion of turning back in turn back 405q of shape portion and the 2nd zone in the 1st zone apart from d401, between the 405r of the shape portion of turning back in the turn back 405r of shape portion and the 2nd zone in the 1st zone apart from d402, between the 405s of the shape portion of turning back in the turn back 405s of shape portion and the 2nd zone in the 1st zone apart from d403, between the 405t of the shape portion of turning back in the turn back 405t of shape portion and the 2nd zone in the 1st zone apart from d404, between the 405u of the shape portion of turning back in the turn back 405u of shape portion and the 2nd zone in the 1st zone apart from d405, between the 405v of the shape portion of turning back in the turn back 405v of shape portion and the 2nd zone in the 1st zone apart from d406.

In addition, the distance between the adjacent arc sections (at interval) L401～L406 as shown in figure 12, is meant the distance between the center line of spiral.

In the present embodiment 4,, preferably allow distance (at interval) L401～L406 between the adjacent arc sections equate, and have the spacing roughly the same with the helicoid of coiled type in order further to dwindle as temperature difference in the face of the wafer of heating object.

In the heater 400 of present embodiment 4, the major part of resistance heater 5 has and constitutes a plurality of arc sections that concentric circles configuration forms in fact, therefore, if resistance heater 405 is switched on and is made its heating, just can allow put section 403 Temperature Distribution therefrom the mind-set circumference be concentric circles and evenly distribute.

In addition, because the distance L 401 between the center line of

resistance heater

405i and 405j, distance L 402 between the center line of resistance heater 405j and 405k, distance L 403 between the center line of resistance heater 405k and 405L, distance L 404 between the center line of resistance heater 405L and 405m, distance L 405 between the center line of

resistance heater

405m and 405n, distance L 406 between the center line of resistance heater 405n and 405o, roughly uniformly-spaced configuration, therefore can allow the caloric value of per unit volume of each resistance heater 405i～405o equate, thus the heating inequality that can suppress to put the radial direction (radiation direction) in the section 403.

In addition, in the present embodiment 4, as mentioned above, each between a pair of reflex part is apart from d401, d402, d403, d404, d405, d406, and be extremely important less than each distance L 401, L402, L403, L404, L405, L406 this point between the adjacent arc sections.

Also be, in order to improve the thermal uniformity of putting section 403, not only to allow arc sections 405i～405o, also to allow the caloric value of the unit volume among reflex part 405q～405v also equate, usually, between a pair of reflex part 405q～405v apart from d401, d402, d403, d404, d405, d406, compare with each respective distance L401～L406 between adjacent arc sections 405i～405o, have at least 1 place above less.Therefore, the caloric value of periphery P 401～P406 of reflex part 405q～405v can be compensated by the heating from corresponding reflex part 405q～405v, thereby can suppress the caloric value of periphery P 401～P406 of reflex part 405q～405v.Therefore can reduce to put the interior temperature difference of face of the wafer W of being placed in the section 403, improve thermal uniformity.In addition, along with reducing of temperature difference in the face of wafer W, the temperature difference of putting in the section 403 also reduces, therefore, the possibility that produces bigger thermal stress in the inside of bigger tabular ceramic body 402 is also less, and rapid temperature rises and the durability of this thermal cycle of cooling to carrying out repeatedly thereby increased.Particularly, periphery P 406, P405 and the P404 in the outside of close tabular ceramic body 402, periphery from tabular ceramic body 2 dispels the heat easily, cause temperature to reduce, therefore, preferably allow the interval d406 of outermost reflex part 405v at least, less than the interval L406 between the center line of resistance heater 405o and 405n.In addition, if allow the interval d405 of its inboard reflex part 405 ú,, then even more ideal less than the interval L405 between the center line of resistance heater 405n and 405m.And then, preferably allow the interval d404 of its inboard less than L404 again.

In addition, in the present embodiment 4, reduced the interior temperature difference of face of wafer W, also reduced the temperature difference of putting in the section simultaneously, the inside that therefore can be reduced in bigger tabular ceramic body 2 produces the possibility of big thermal stress, improves carrying out the durability of rapid temperature rising with the thermal cycle of cooling repeatedly.

Particularly, if allow between a pair of reflex part 405q～405v apart from d401～d406, be 30%～80% of each distance L 401～L406 between adjacent arc sections 405i～405o, just can further improve the thermal uniformity of putting in the section 403.If be below 30%, just the peripheral temperature of reflex part 405q～405v might reduce.In addition, if surpassed 80%, just the peripheral temperature of reflex part 405q～405v might increase.If be 30～80%, just can eliminate above-mentioned possibility, appropriateness increases near the caloric value reflex part 405q～405v, thereby can further improve the thermal uniformity of putting in the section 403.Even more ideal is to allow d401～d406 be respectively 40～60% of corresponding L401～L406.

In addition, the resistance heater 405 of present embodiment 4, because wire rod has the form that is rolled into spiral (coil) shape, and constitute by arc sections 405i～405o and reflex part 405q～405v, therefore turned back and form resistance heater and compare with the former print process rectangle that passes through, reduced the possibility that edge part is applied excessive stress.By like this,, damage the also less high heater 400 of reliability of possibility of tabular ceramic body 402 or resistance heater 405 even a kind of heater 400 sharply heating or cooling can be provided.

In addition, in the resistance heater 405, the spacing of the helical coil of the arc sections of most peripheral is preferably less than the spacing of the helical coil of its inboard arc sections.Like this, can improve the caloric value of the resistance heater 405 of most peripheral, prevent to cause that from heat radiations such as the radiation of the periphery of tabular ceramic body 402 or convection current temperature descends, further reduce temperature difference in the face of wafer W.Also promptly, by forming resistance heater 405 like this, can prevent that the temperature of the periphery of wafer W face from descending to compensating from the heat radiation of the outer peripheral face of tabular ceramic body 2 or the heat that convection current is flowed out.In addition, by adopting such formation, temperature difference in the face of putting section 3 in the time of particularly can reducing the transition when heating up, reduce the thermal stress that is produced in the tabular ceramic body 402, even repeat fierce thermal cycle, the possibility of tabular ceramic body 402 breakages is also less, is very desirable.

In addition, the shape of the resistance heater of being buried underground in the tabular ceramic body 402 405, it for example is the roughly concentric circles shown in Figure 15 A, establishing resistance heater 405 area occupied when being S, allow the area S be more than 90% of area of putting section 403, near the area of putting section 3, very desirable on the temperature difference this point in reducing the face of wafer as far as possible.In addition, area S is the area of circumscribed circle, external ellipse and the external polygon etc. of encirclement resistance heater 405.

In addition, announced a kind of bigger chip heating device of caloric value that surpasses 90% zone of the diameter put section in the patent documentation 14, but the coiling body of this heater heats device is a swirl shape, and the number of turns of this vortex is up to 8 circles, even in 90% zone, can access bigger caloric value, because this zone also is not in relation to the center of tabular ceramic body and the center symmetry, therefore might increase the left and right sides temperature difference of wafer.Relative therewith, in the formation of present embodiment 4, the tabular relatively ceramic body 402 center symmetries of the resistance heater 405 of periphery can consistently increase caloric value, have therefore eliminated the interior temperature difference of face of wafer W, are very desirable.

Figure 13 A is the summary stereogram of the correlation form (heater 401) of the variation of the heater 400 of explanation present embodiment 4.In addition, Figure 13 B is the summary profile of the X-X line of Figure 13 A.The central authorities of the opposing party's interarea of the heater 401 of this variation, engaging has the tubular holding components 418 that power supply terminal 411 and temperature element 427 are surrounded.By the holding components 418 that engages tubular like this, can keep heater 401 by the flange part 418b of holding components 418 belows, therefore, even ceramic heater 401 for example is placed in the halogen plasma ambient gas, be heated on 500 ℃, its thermal endurance and corrosion resistance are also very superior, so heater 401 deform, the be corroded possibility that produces particle is less, is very desirable.

In addition, in the heater 401 of this variation, the opposing party's interarea of above-mentioned tabular ceramic body 402 engages with tubular holding components 418 by flange part 418a, the coil-span of the resistance heater of the inboard of this tubular holding components 418, the coil-span of resistance heater in the outside that cans be compared to most this tubular holding components 418 is little.Its reason is, might conduct heat to the tubular holding components 418 that is engaged from tabular ceramic body 402, allow the temperature of inboard of holding components 418 of tabular ceramic body 2 descend, therefore, if it is less to be positioned at the coil-span of resistance heater of inboard of tubular holding components 418, just can increase the caloric value of the resistance heater of tubular holding components 418 inboards, play the effect that prevents that temperature from descending.Be provided with the ceramic heater of coiled type resistance heater, the external diameter of coil is big more, the interior temperature difference of face of putting section 403 just can be more little, but in the reflex part, be difficult to come meander coil, preferably form the resistance heater of curved shape by 1.5～3 times radius of curvature of coil outer diameter by the center line of the radius of curvature littler than the external diameter of coil.Bury into resistance heater 405 underground concentric circles and be used as such curved shape, but in the central part of tabular ceramic body, because the arc radius of center line is less, therefore the radius of curvature of reflex part diminishes, distance between the arc sections of resistance heater 405 is less, increases caloric value and becomes difficult more.Therefore, in order to make the center curvature of a curve of reflex part not too little, increase caloric value, preferably the spacing that will constitute the coil of resistance heater 405 is dwindled, increase the caloric value of the unit length of coil, put temperature difference in the section 3 when reducing to heat up transition, reduce temperature difference in the face of wafer W simultaneously.

In addition, the coil-span Na of the resistance heater 405a of tubular holding components 418 inboards, can be used as and will be positioned at than the profile of the flange 418a of tubular holding components 418 length near the center line of inboard resistance heater 405a, resulting value Na obtains divided by the number of turns of coil.

In addition, the center line of resistance heater 405 as shown in figure 14, is to see the line L that passes through from the center of the resistance heater 405 of coiled type from putting section 3 sides.

In addition, the spacing of the coil of the resistance heater 405b in tubular holding components 418 outsides can be used as the length with the center line of resistance heater 405b too, and resulting value Nb obtains divided by the number of turns of coil.

In addition, in the opposing party's interarea of tabular ceramic body 402, engage with tubular holding components 418, if the inboard area of the tubular holding components 418 of this tabular ceramic body 402 is S1, the resistance value of the resistance heater 405a of these tubular holding components 418 medial region is R1, the area in the outside of this tubular holding components 418 is S2, the resistance value of the resistance heater 405b in the zone in the outside of this tubular holding components 418 is R2, preferably allow the resistance density (R1/S1) of tubular holding components 8 inboards, greater than the resistance density (R2/S2) in tubular holding components 418 outsides.

In addition, area S is area S1 and the resulting value of area S2 addition.

Also be, if above-mentioned heater 401 heatings, heat is just through tubular holding components 418, the not shown reaction treatment chamber side draught that is mounted this holding components 418 is walked, produce heat absorption, the evenly heating that section 403 is put in infringement, simultaneously, especially when heating up, the central authorities that the tabular ceramic body 402 of tubular holding components 418 is arranged at joint, in boundary between the periphery of the ceramic heater 401 that does not engage tubular holding components 418, produce bigger thermal stress, might cause ceramic heater 401 to split.But, in this variation, make way for resistance density (R1/S1) than the per unit area of the resistance heater 405a among the tubular holding components 418 close area inside Q1 of resistance heater 405, bigger than the tubular holding components 418 that is arranged in than resistance heater 405 near the resistance density (R2/S2) of the per unit area of the resistance heater 405b of the regional Q2 in the outsides, thus big than periphery of the caloric value that engages tabular ceramic body 402 central authorities that tubular holding components 418 is arranged allowed.By like this, can compensate the temperature loss that is accompanied by heat absorption, allow the uniformity of temperature profile of putting section 403, simultaneously, when heating up, can allow big than periphery of the caloric value of central authorities of ceramic heater 401, therefore, can relax the thermal stress that is produced in the ceramic heater 401, preventing heats up rapidly causes the breakage of ceramic heater 401.

And then above-mentioned resistance density (R1/S1) is preferably than resistance density (R2/S2) in 1.05～1.5 times the scope and increases.

This be because, if resistance density (R1/S1) is than resistance density (R2/S2) discontented 1.05, then might can't compensate the temperature loss that heat absorption caused from tubular holding components 418, it is low that feasible temperature of putting the central authorities of section 3 compares periphery, thereby being difficult to obtain even temperature distributes, simultaneously, might in ceramic heater 401, produce bigger thermal stress during intensification, cause cracking.Otherwise, if resistance density (R2/S2) than resistance density (R1/S1) greater than 1.5, then with from the temperature loss of tubular holding components 418 compare, the caloric value of resistance heater 405a might be too high, the feasible temperature ratio periphery height of putting the central authorities of section 3 distributes thereby be difficult to obtain even temperature, simultaneously, it is very big that the thermal stress that is produced during intensification becomes, and might cause ceramic heater 400 crackings.

In addition, the ceramic body heater 401 that tubular holding components 418 is arranged by joint, obtain the method for resistance density (R1/S1) and resistance density (R2/S2), for example under the situation of ceramic body heater 401, as described below with the heating figure Q shown in Figure 15 A.

At first, excision tubular support 418, exposure, resolve the shape of the heating figure Q that is buried underground in the ceramic body 402, to be positioned at than tubular holding components 418 near the area of area inside Q1 as S1, to be positioned at than above-mentioned tubular holding components 418 near the area of the regional Q2 in the outsides as S2, calculate respectively.

In addition, the resistance value R2 of the resistance value R1 of resistance heater 405a and resistance heater 405b, by with tabular ceramic body 402, the part of the most peripheral by tabular holding

components

418,2 are divided into discoideus ceramic body and ring-shaped pottery body, if the resistance value of the resistance heater 405a that is buried underground in the discoideus ceramic body 402 is that the resistance value of the resistance heater 405b that buried underground in R1, the ring-shaped pottery body is R2, measure respectively.As above, can pass through the area S1 and the area S2 that are obtained, and the value of resistance value R1 and resistance value R2, calculate resistance density (R1/S1) and resistance density (R2/S2).

In addition,, and take pictures by X ray etc., obtain the relative resistance value,, also can obtain resistance density than (R1/S1)/(R2/S2) by like this from putting the number of turns of the resistance heater 405 that section 403 seen according to the line of resistance heater 405 footpath.

In addition, in present embodiment 4 and the variation thereof,,, 7～13 weights are set uniformly-spaced roughly preferably with the concentrically ringed arc sections of resistance heater for the surface temperature to the wafer W more than the diameter 200mm evenly heats.Particularly, use in the ceramic heater with the wafer heating at diameter 200mm, be concentric circles and the resistance heater 405 of coiled type be set, can reduce the density unevenness of the mutually opposed section 403 of resistance heater, reduce temperature difference in the face of wafer W along 11～15 bicircular rings.

In addition, wire rod is rolled into the screw diameter of the resistance heater 405 of coil (spiral) shape, is preferably 0.05～0.2 times of thickness of tabular ceramic body 402.In addition, among the present invention, have under the situation of the different ellipse spiral structure of the diameter of different directions at resistance heater 405, preferably allow its minor axis consistent, and preferably the length of this minor axis is made as 0.05～0.2 times of tabular ceramic body 402 thickness with the thickness direction of tabular ceramic body 402.

Here, in the present embodiment 4, if the wire rod that resistance heater 405 is constructed than the ellipse spiral that is 0.95～0.75 by minor axis and major axis constitutes, just can further reduce temperature difference in the face of putting in the section.

If the radius of spin of resistance heater 405 (being minor axis under the situation of ellipse spiral), below 0.05 times of thickness for tabular ceramic body 402, then, therefore exist to be difficult to the evenly tendency of heating of opposed section 403 because the radius of spin or the minor axis of resistance heater 405 are too short.In addition, if the radius of spin of resistance heater 405 (being minor axis under the situation of ellipse spiral), more than 0.2 times of thickness for tabular ceramic body 402, coil radius before then burying underground is excessive, the feasible shape of turning back is discontinuous, the spacing that is difficult to be between the resistance heater of a pair of shape of turning back is buried underground accurately, might cause putting that temperature difference increases in the face of section 403.In order further to reduce temperature difference in the face of putting section 3,, be made as 0.08～0.14 times of thickness of tabular ceramic body 402 preferably with the diameter (being minor axis under the situation of ellipse spiral) of the spiral of resistance heater 405.

In addition, resistance heater 405 is made of the coiling body of wire rod, is embedded in by high temperature to be undertaken in the ceramic body of sintering, and therefore preferably by resistant to elevated temperatures tungsten or molybdenum, or their alloy is made.In addition, tabular ceramic body 402, in order to reduce temperature in the face of putting section 3, preferably the pyroconductivity by tabular ceramic body 402 is that 50W/ (mK) above carbide or nitride ceramics are made.Even more ideal is the sintered body of carborundum or aluminium nitride.

In addition, heater 401 of the present invention can be installed in the internal tank of film formation device or Etaching device.Putting between section 403 and the power supply terminal 411 of heater 401, encircle by the O shape among the flange 418b that is installed in holding components 418, and seal with external container, film forming gas and etching gas can be provided in container from the outside, and adjust particular environment gas.By any heater 401 among aforesaid the present invention being arranged in the gas containers that can control environment, can accessing heating object is the chip heating device of the present invention of wafer.In this chip heating device, film forming is supplied in the container with gas and vector gas with etching with gas, the air pressure in the control container is placed wafer W putting in the section 403 of heater 401 of the present invention, heating resistor heater 405 simultaneously.Heater 401 of the present invention, because it is less to put the interior temperature difference of the face of the wafer W of being placed in the section 403, therefore be suitable for semiconductor-fabricating device, promptly be used in up-to-date 90nm or the process for manufacture of semiconductor device that circuitous pattern constituted of 45nm, also can not reduce the rate of finished products of semiconductor element.

Heater 401 of the present invention for example can be made by method as described below.

At first, this method comprises: make by the operation of the made tabular formed body of ceramic powders, in a side's of this formed body interarea, the operation of the ditch that the arc sections that forms the arc setting and the reflex part of the shape of turning back configuration form continuously, in this ditch insertion coiled type resistance heater operation and between the space of this ditch and resistance heater, fill ceramic powders, this ceramic powders is prepared pressurization, obtain being embedded with the operation of the formed body of resistance heater.Afterwards, this formed body is inserted in the heat-resisting mould, pressurizes and fire.In this method,,, also can allow and fire caused contraction unanimity even therefore fire owing to be filled in the density of the density of the ceramic powders between the space of ditch and resistance heater near formed body.Therefore, in the tabular ceramic body 402 by this method made, can reduce distortion and residual stress, thereby even can access a kind of thermal cycle of carrying out repeatedly, the heater of the present invention 400,401 of the superior durability that damaged possibility is also less.

In the above-mentioned manufacture method, in the operation of coiled type resistance heater 405 being buried underground in the tabular ceramic body 402, because the screw diameter of resistance heater 405 is bigger, therefore need in tabular ceramic formation body, form the ditch that can hold the coiled type wire rod, but before holding, preferably the resistance heater of coiled type is configured as in advance the shape that the shape with this ditch is complementary and heat-treats, so just can deposit by the made resistance heater of wire rod, and can not damage figure at ditch.

Afterwards, in this ditch, inserted after the resistance heater 405 that is above-mentioned desired shape, between the space of this ditch and above-mentioned resistance heater, fill ceramic powders with the ceramic same composition that constitutes formed body, this ceramic powders is prepared pressurization, obtain being embedded with the formed body of resistance heater, this point is extremely important.

Also be, if do not allow coiled type the prior matching slot of resistance heater shape and form, and in groove, insert the resistance heater of coiled type, and between the space of groove and above-mentioned resistance heater, fill ceramic powders, then since in the groove density of the ceramic powders of being filled less than the density of ceramic formation body, therefore even this ceramic formation body is pressurizeed and fire, also can in slot part, cave in unusually, in slot part, produce residual stress, if sintered body is heated and applied stress, might be easy to breakage.

Relative therewith, after the resistance heater that has been shaped by the shape with prior matching slot is inserted in the groove, between the space of groove and resistance heater, fill after the ceramic powders, this ceramic powders is pressurizeed, just can allow the density of ceramic powders be 90～100% degree of ceramics forming volume density.By like this, the generation of the residual stress that can eliminate when firing to be produced and the distortion of tabular ceramic body evenly are embedded in resistance heater in the tabular ceramic body.

In addition, in the part of preparation pressurization and depression, by filling ceramic powders once more, face prepares pressurization once more from it, can allow the ceramic powders and the density between the formed body of being filled more approaching, in addition, can allow the ceramic powders of being filled above, with 1 face of top formation of formed body, thereby can access a kind of formed body of very difficult generation residual deformation.

The formed body that is embedded with resistance heater with above form is inserted in heat-resisting mould, for example in carbon die or BN (boron nitride) mould, pressurizes and fires from above-below direction.It is less to fire the internal modification of resulting sintered body by pressurization like this, even tabular ceramic body 402 as heater 401 of the present invention, carry out rapidly heating and cooling repeatedly, residual deformation or thermal stress cause damaged possibility also less, are very desirable.

In addition, if the diameter D of the circumscribed circle C of resistance heater 405 is 1.02 times of degree of the diameter of wafer W, even the temperature of periphery descends, temperature difference also can become less in the face of wafer W, is very desirable.In addition, preferably allow the diameter DP of tabular ceramic body 2 be 1.05～1.15 times of degree of wafer W diameter.

Below more detailed formation is described.

Figure 11 B is relevant another routine profile of the ceramic heater of explanation execution mode 4.This ceramic heater is put section 403 with side's interarea as what place wafer W, has the tabular ceramic body 402 that inside is embedded with resistance heater 405, and the power supply 406 and the power supply terminal 411 that are electrically connected with this resistance heater 405.In addition, tabular ceramic body 402 is 7～20mm by thickness of slab t for example, and the Young's modulus under 100～500 ℃ is that the pottery of 200～450MPa constitutes.

Young's modulus under 100～500 ℃ is the material of the tabular ceramic body 402 of 200～450MPa, can use aluminium, silicon nitride, sialon, aluminium nitride, wherein particularly aluminium nitride has more than the 50W/ (mK), even the above high thermoconductivity of 100W/ (mK), simultaneously, corrosion resistance and anti-isoiony to corrosive gass such as fluorine class and chlorine classes are superior, therefore are very suitable for the material as tabular ceramic body 402.

In addition, at tabular ceramic body 402, by being under the sintered body of the main component situation about constituting with the aluminium nitride, for example following the making.

At first, in the main component aluminium nitride, add rare earth element oxides such as Y2O3 or Yb2O3 as sintering aid, can also add alkali earths element oxides such as CaO as required, and fully mix, add third rare class adhesive and carry out spray drying, produce prilling powder.

Afterwards, in mortar shape mould, fill this powder, pressurize, obtain flat formed body from above-below direction.

Groove can use mathematics control processing machines such as machining center by cutting with drilling machine etc., carries out the processing of unprocessed formed body.

In addition, prepare the heater identical and fire mould with the resistance heating shape buried underground in the above-mentioned undressed formed body, the coiled type resistance heater of making is separately cut into given length, by given configuration resistance heater is embedded into above-mentioned firing in the mould, make it form given spacing, heat-treat afterwards, allow resistance heater 405 be fired into given shape.Afterwards, the coiled type resistance heater of being fired is inserted in the above-mentioned undressed formed body in the formed groove.

Afterwards, on the coiled type resistance heater, fill the ceramic powders identical with formed body.If the density of the ceramic powders of being filled in the groove is less than 1.0 degree, and like this by this formed body of sintering such as hot press, then might allow the slot part depression, allow little than other parts of the density of resistance heating body portion, make formed body in the slot part breakage.

Therefore, preferably pass through the pressure below 5～20MPa, the ceramic powders of being filled in the slot part is pressurizeed, improve the density of the ceramic powders of being filled with the degree that can not be damaged to body from above.In addition, be preferably in the slot part that caves in because of pressurization, fill ceramic powders and pressurization repeatedly.Filling ceramic powders and pressurization like this in slot part, can allow the density of formed body approaching with the density of the ceramic powders of being filled, thereby can eliminate in follow-up ablating work procedure, because of density variation produces damaged possibility, is very desirable.If under 500 ℃, ungrease treatment was carried out in the formed body heating that is embedded with resistance heater in 1 hour, be inserted in the heat-resisting mould of making by carbon etc., under 1700～2100 ℃, heat, pressurize by the pressure of 5MPa～6MPa from top and bottom simultaneously and fire, just can not damage sintered body, and produce the less sintered body of residual stress of the resistance heater of being buried underground 405.The sintered body of made even resistance heater is heated, heats up or cooling it rapidly like this, and tabular ceramic body can not damage yet.At last, to the profile of the sintered body that is embedded with resistance heater and put section and carry out attrition process, obtain the tabular ceramic body of execution mode 4.

One side's tubular holding components, can be by the raw material that is mixed with above-mentioned ceramic powders and thermosetting resin etc. be heated, be filled in the mould by injection method, be configured as cylindrical body, by casting method or rubber pressing the tubular formed body of made is carried out cut, be processed into after the desired shape, after 400～600 ℃ the processing of unsticking mixture is carried out in heating down, in nitrogen environment, carry out sintering by 1800 ℃～2200 ℃, periphery is carried out attrition process, thereby can access the holding components 418 of tubular.

In addition, the part machine that is connected with the power supply terminal 411 of above-mentioned tabular ceramic body 402 is implemented perforate processing, contact with above-mentioned tubular holding components 418 through ceramic slurry, make that this hole is besieged, by temperature contact-making surface is heated than low 200～400 ℃ of firing temperature, pressurize simultaneously, thereby tabular ceramic body 402 can be joined together with tubular holding components 418.

More than the formation and the manufacture method thereof of heater 400 of the present invention is illustrated, even but heater of the present invention 400,401 are embedded with the Electrostatic Absorption electrode, be built-in with the chip holding component that engages with electrode with Electrostatic Absorption in the tabular ceramic body, or plasma produces this heater 400,401 with high-frequency electrode, short of disengaging thought range of the present invention, just belong in the scope of the present invention, this point is self-evident.

[embodiment 1]

At first, in aluminium nitride powder, add the indium oxide that weight is scaled 1.0 quality %, use isopropyl alcohol and polyurethane ball afterwards, carry out 48 hours mixing by ball mill, by making the slip of aluminium nitride like this.

Next, allow the aluminium nitride slip from 200 mesh sieve holes, pass through, remove after the chip of polyurethane ball and ball mill wall, in explosion-proof drying machine, passed through 120 ℃ of dryings 24 hours.

Next, mix the adhesive and the solvent of third rare class in resulting aluminium nitride powder, make the nitrogenize aluminium paste, scraper (doctor blade) method is made many aluminium nitride tellites.

Afterwards, with resulting aluminium nitride tellite, many laminations get up to carry out thermo-compressed, form laminate.

Then, laminate in non-oxidizable air-flow, after 500 ℃ 5 hours ungrease treatment of temperature enforcement, in non-oxidizable air-flow, is carried out 5 hours firing by 1900 ℃ temperature, produce tabular ceramic body with various pyroconductivities.

Afterwards, aluminum nitride sintered product is implemented attrition process, produce many thickness of slab 3mm, the discoid tabular ceramic body of diameter 330mm.Afterwards, form through hole at 3 places of each tabular ceramic body.Through hole is that the concentric circles equal intervals of 60mm forms at the center of the tabular ceramic body of distance, and the perforation bore is 4mm.

Next, as electric conducting material, carry out mixingly Au powder and Pd powder, produce the conductivity slip with the glass slip that is added with the adhesive that is constituted with above-mentioned same composition, this conductivity slip on tabular ceramic body, is printed out given resistance heating volume graphic by silk screen print method.

Afterwards, after printing, be heated to 150 ℃, allow the organic solvent drying, and then, fire by 700～900 ℃ temperature at 550 ℃ down after 30 minutes the ungrease treatment of enforcement.By like this, forming thick is the resistance heater of 50 μ m.

The configuration of resistance heating body region, 25% circular resistance heating body region at the central part diameter D that to form 1 diameter be tabular ceramic body, form annulus resistance heating body region in its outside, 45% the annulus that in its outside with diameter is D is divided into two resistance heating body region, and then be 70% the annulus of D with the internal diameter of the resistance heating body region of outermost, be divided into 4 resistance heating body region, amount to 8 resistance heating body region of formation.Afterwards, the diameter of circumscribed circle C of establishing 4 resistance heating body region of outermost is 310mm, produces test portion.In resistance heater 5, install and fix power supply 6 then,, produce tabular ceramic body 2 by like this by wax.In addition, in the present embodiment, the resistance heater of central part is in parallel with the circular resistance heater in its outside, adds thermal control simultaneously.

Among the embodiment 1, made the holding components that variation has taken place for the interval L1 that connects between the circular arc band and the ratio (L1/L4 * 100%) of the interval L4 between the circular arc band.

In addition, the substrate shell is arranged,, constitutes with the aluminum side wall portion of thick 1.0mm by the aluminum of thick 2.0mm bottom, in the bottom surface, with puff prot, thermoelectric to and Lead-through terminal be installed on the given position.In addition, be 20mm from the bottom surface to the distance the tabular ceramic body.

Afterwards, in the above-mentioned peristome that the substrate shell arranged, overlapping tabular ceramic body, be through with bolt at peripheral part, allow tabular ceramic body directly not contact, the contact component of ring-type is arranged, and be situated between flexible body and spiral shell is tightened up a screw from the contact component side and be situated between with the substrate shell is arranged, by carrying out flexible fastening like this, obtain chip heating device.

In addition, the section of contact component 17 is by the formation ring-type.Above the L shaped section portion, with following and circular the contacting of tabular ceramic body, and the width of the contact-making surface between the tabular ceramic body is 3mm.In addition, the material of contact component is used heat-resistant resin.The various chip heating devices of made are test portion No.1～9.

The evaluation of the chip heating device of made uses diameter that 29 places are embedded with the temperature detecting resistance body to carry out with wafer as the thermometric of 300mm.Give each chip heating device energising, by 5 minutes wafer W is warmed up to 200 ℃ from 25 ℃, the temperature of wafer W is set at after 200 ℃, just take off wafer W, the thermometric wafer W of room temperature is placed on puts on the section, the mean temperature that determines wafer W reaches the needed time in the scope that is stabilized in 200 ℃ ± 0.5 ℃, as response time.In addition, at 5 minutes from being warmed up to 200 ℃ from 30 ℃, and after keeping 5 minutes, carry out 30 minutes chilling temperature circulation, carry out like this repeatedly after 1000 circulations, mensuration is set to 200 ℃ and crossed the maximum of the chip temperature after 10 minutes and minimum value poor from room temperature, as the temperature difference of wafer W.

The result is as shown in table 1.

[table 1]

Test portion No.	The structure of resistance heating body region	The resistance heater number of regions	L1/L4×100 (％)	The temperature difference of wafer (℃)
Test portion No.	The structure of resistance heating body region	The resistance heater number of regions	L1/L4×100 (％)	The temperature difference of wafer (℃)	^*1	A plurality of circles, ring and fan-shaped	8	20	1.20
2	A plurality of circles, ring and fan-shaped	8	30	0.49	^*1	A plurality of circles, ring and fan-shaped	8	20	1.20
2	A plurality of circles, ring and fan-shaped	8	30	0.49	3	A plurality of circles, ring and fan-shaped	8	40	0.39
4	A plurality of circles, ring and fan-shaped	8	50	0.28	3	A plurality of circles, ring and fan-shaped	8	40	0.39
4	A plurality of circles, ring and fan-shaped	8	50	0.28	5	A plurality of circles, ring and fan-shaped	8	60	0.38
6	A plurality of circles, ring and fan-shaped	8	80	0.43	5	A plurality of circles, ring and fan-shaped	8	60	0.38
6	A plurality of circles, ring and fan-shaped	8	80	0.43	7	A plurality of circles, ring and fan-shaped	8	90	0.47
8	A plurality of circles, ring and fan-shaped	8	95	0.49	7	A plurality of circles, ring and fan-shaped	8	90	0.47
8	A plurality of circles, ring and fan-shaped	8	95	0.49	*9	A plurality of circles, ring and fan-shaped	8	120	2.60

^*Mark is represented the embodiment beyond the present invention.

Test portion No.1 is because the ratio of L1/L4 is 20%, and is too little, so the temperature difference of wafer is up to 1.2 ℃.

In addition, test portion No.9 is because the ratio of L1/L4 is 120%, and is too big, so the temperature difference of wafer is up to 2.6 ℃.

In addition, can learn that in a pair of distance of turning back between the circular arc band on the same circumference, than little test portion No.2～8 of the distance between circular arc band adjacent on the radial direction, the temperature difference of wafer is below 0.5 ℃, has demonstrated outstanding characteristic.

In addition, the ratio of the L1/L4 of test portion No.3～5 is 40～60%, and the temperature difference of wafer is for being low to moderate below 0.39 ℃, and is more outstanding.

[embodiment 2]

The same with embodiment 1, make tabular ceramic body.

Afterwards, the same with embodiment 1, form through hole at 3 places.

Next, the same with embodiment 1, form the resistance heater 5 of thick 50 μ m.

The configuration of resistance heating body region 4, form the resistance heating body region of 1 diameter D1mm at central part, form annulus resistance heating body region in its outside, is that the annulus of D2 (mm) is divided into two resistance heating body region in its outside with diameter, and then be the annulus of D3 with the internal diameter of the resistance heating body region of outermost, be divided into 4 resistance heating body region, amount to 8 resistance heating body region of formation.Afterwards, the diameter of circumscribed circle C of establishing 4 resistance heating body region of outermost is 310mm, produces the test portion of the ratio that has changed D1, D2, D3.In resistance heater 5, install and fix power supply 6 then,, produce tabular ceramic body 2 by like this by wax.In addition, in the present embodiment, the resistance women and children of central part rise in parallel with the circular resistance heater in its outside, add thermal control simultaneously.

In addition, in order to compare, produce the formation resistance heating body region then that adopts Figure 19, the size in rectangle heater zone is 212 * 53mm, uses the test portion No.36 in 8 rectangle heater zones.Equally, test portion No.37 adopts the resistance heating body region of structure shown in Figure 180, and D1r is 150mm, and D2r is 310mm.Test portion No.38 adopts the resistance heater region shape of structure shown in Figure 17.The resistance heating body region of test portion No.39 is circular, and produces by 1 chip heating device that resistance heater constituted.

Afterwards, use identical with embodiment 1 have substrate shell and contact component 17, the same with embodiment 1, tabular ceramic body and metal shell are fixed up, produce the wafer of embodiment 2.

Produced various chip heating devices are No.11～39.

The evaluation of the chip heating device of made, the same with embodiment 1, use 29 places to be embedded with the thermometric wafer of the diameter of temperature detecting resistance body as 300mm, carry out similarly to Example 1.

The result is as shown in table 2.

[table 2]

Test portion No.

The structure of resistance heating body region

The resistance heater number of regions

D1/D× 100(％)

D2/D× 100(％)

D3/D× 100(％)

The temperature difference of wafer W (℃)

Response time (second)

11	A plurality of circle ring sectors	8	18	48	75	0.48	43
11	A plurality of circle ring sectors	8	18	48	75	0.48	43	12	A plurality of circle ring sectors	8	20	48	75	0.39	35
13	A plurality of circle ring sectors	8	23	48	75	0.28	28	12	A plurality of circle ring sectors	8	20	48	75	0.39	35
13	A plurality of circle ring sectors	8	23	48	75	0.28	28	14	A plurality of circle ring sectors	8	27	48	75	0.27	27
15	A plurality of circle ring sectors	8	30	48	75	0.38	34	14	A plurality of circle ring sectors	8	27	48	75	0.27	27
15	A plurality of circle ring sectors	8	30	48	75	0.38	34	16	A plurality of circle ring sectors	8	35	48	75	0.42	38
17	A plurality of circle ring sectors	8	40	48	75	0.43	39	16	A plurality of circle ring sectors	8	35	48	75	0.42	38
17	A plurality of circle ring sectors	8	40	48	75	0.43	39	18	A plurality of circle ring sectors	8	25	48	75	0.49	45
19	A plurality of circle ring sectors	8	25	40	75	0.42	39	18	A plurality of circle ring sectors	8	25	48	75	0.49	45
19	A plurality of circle ring sectors	8	25	40	75	0.42	39	20	A plurality of circle ring sectors	8	25	41	75	0.38	33
21	A plurality of circle ring sectors	8	25	43	75	0.29	28	20	A plurality of circle ring sectors	8	25	41	75	0.38	33
21	A plurality of circle ring sectors	8	25	43	75	0.29	28	22	A plurality of circle ring sectors	8	25	45	75	0.28	27
23	A plurality of circle ring sectors	8	25	49	75	0.29	28	22	A plurality of circle ring sectors	8	25	45	75	0.28	27
23	A plurality of circle ring sectors	8	25	49	75	0.29	28	24	A plurality of circle ring sectors	8	25	53	75	0.39	34
25	A plurality of circle ring sectors	8	25	55	75	0.41	39	24	A plurality of circle ring sectors	8	25	53	75	0.39	34
25	A plurality of circle ring sectors	8	25	55	75	0.41	39	26	A plurality of circle ring sectors	8	25	60	75	0.46	44
27	A plurality of circle ring sectors	8	25	48	50	0.49	45	26	A plurality of circle ring sectors	8	25	60	75	0.46	44
27	A plurality of circle ring sectors	8	25	48	50	0.49	45	28	A plurality of circle ring sectors	8	25	48	55	0.42	39
29	A plurality of circle ring sectors	8	25	48	60	0.41	38	28	A plurality of circle ring sectors	8	25	48	55	0.42	39
29	A plurality of circle ring sectors	8	25	48	60	0.41	38	30	A plurality of circle ring sectors	8	25	48	65	0.37	33
31	A plurality of circle ring sectors	8	25	48	67	0.22	26	30	A plurality of circle ring sectors	8	25	48	65	0.37	33
31	A plurality of circle ring sectors	8	25	48	67	0.22	26	32	A plurality of circle ring sectors	8	25	48	70	0.23	28
33	A plurality of circle ring sectors	8	25	48	80	0.38	33	32	A plurality of circle ring sectors	8	25	48	70	0.23	28
33	A plurality of circle ring sectors	8	25	48	80	0.38	33	34	A plurality of circle ring sectors	8	25	48	85	0.38	34
35	A plurality of circle ring sectors	8	25	48	90	0.45	48	34	A plurality of circle ring sectors	8	25	48	85	0.38	34
35	A plurality of circle ring sectors	8	25	48	90	0.45	48	^*36	Rectangle	8	-	-	-	2.40	63
^*37	Single annulus in the past	5	-	-	-	1.80	55	^*36	Rectangle	8	-	-	-	2.40	63
^*37	Single annulus in the past	5	-	-	-	1.80	55	^*38	Fan-shaped	4	-	-	-	2.50	73
^*39	Single annulus	1	-	-	-	3.60	75	^*38	Fan-shaped	4	-	-	-	2.50	73

^*Mark is represented the embodiment beyond the present invention.

The heater 1 of relevant test portion No.11 of the present invention～35, discontented 0.5 ℃ of the temperature difference of wafer W, and response time is below 48 seconds, very outstanding.Test portion No.11～35 are that central part has circular resistance heating body region, and the heater 1 of the resistance heating body region in concentrically ringed 3 annulus in the outside.In addition, test portion No.12～17,19～25,28～34 shown in the table 1, the temperature difference of wafer W is low to moderate below 0.43 ℃, and response time is below 39 seconds, has demonstrated more outstanding characteristic.Test portion No.12～17,19～25,28～34 heater 1, the outer diameter D 1 of the resistance heating body region of central part be its outermost the resistance heating body region outer diameter D 20～40%, outer diameter D 2 is 40～55% of an outer diameter D, and outer diameter D 3 is 55～85% of an outer diameter D.

In addition, the outer diameter D 1 of the resistance heating body region of central part is the chip heating device of 20～30% test portion No.12～15 of the circumscribed circle D of resistance heater, and the temperature difference of wafer is below 0.39 ℃, and response time is below 35 seconds, is very desirable.In addition, outer diameter D 1 is 23～27% the test portion No.13 of D, 14 chip heating device, and the temperature difference of wafer is below 0.28 ℃, and response time is below 28 seconds, and is desirable more.

In addition, outer diameter D 2 is the chip heating device of 41～53% test portion No.20～24 of D, and the temperature difference of wafer is below 0.39 ℃, and response time is below 34 seconds, is very desirable.In addition, outer diameter D 2 is the chip heating device of 43～49% test portion No.21～23 of D, and the temperature difference of wafer is below 0.29 ℃, and response time is below 28 seconds, and is desirable more.

In addition, outer diameter D 3 is the chip heating device of 55～85% test portion No.28～34 of D, and the temperature difference of wafer is below 0.42 ℃, and response time is below 39 seconds, is very desirable.In addition, outer diameter D 3 is the chip heating device of 65～85% test portion No.30～34 of D, and the temperature difference of wafer is below 0.38 ℃, and response time is below 34 seconds, and is desirable more.In addition, outer diameter D 3 is 67～70% the test portion No.31 of D, 32 chip heating device, and the temperature difference of wafer is below 0.23 ℃, and response time is below 28 seconds, and is desirable more.

Relative therewith, test portion No.36～39 beyond the present invention, the temperature difference of wafer is up to more than 1.8 ℃, and response time is also up to 55 seconds, and is very undesirable.

[embodiment 3]

Next, to the heater 1 of the resistance value made of the test portion No.5 by embodiment 1, the allocation position of changes in resistance heater 5 is verified the relation between the temperature difference in the configuration of resistance heater 5 and the wafer W face.

Specifically, for to the annulus resistance heating body region 4b that is respectively equipped with resistance heater 5a～5h, the inside diameter D 22 of 4cd, 4eh, the magnitude relationship of D33, D0, with related checking the between the temperature difference in the wafer W face, and be benchmark with the outer diameter D of the outermost annulus resistance heating body region 4eh that is formed on plate body 2, change the inside diameter D 22 of each resistance heating body region 4, the length ratio between D33, the D0, by the assay method identical, measure temperature difference and recovery time in the face of wafer W with embodiment 1.The result is as shown in table 3.

[table 3]

Test portion No.	D1/D ×100 (％)	D22/D ×100 (％)	D2/D ×100 (％)	D33/D ×100 (％)	D3/D ×100 (％)	D0/D ×100 (％)	Maximum temperature difference in wafer W face during transition (℃)	Recovery time (second)	The temperature difference of wafer (℃)	Maximum temperature difference in wafer W face during transition (℃)	Heating-up time (second)
Test portion No.	D1/D ×100 (％)	D22/D ×100 (％)	D2/D ×100 (％)	D33/D ×100 (％)	D3/D ×100 (％)	D0/D ×100 (％)		Recovery time (second)	The temperature difference of wafer (℃)		Heating-up time (second)	41	23	25	50	61	73	91	4.2	39	0.39	4.2	38
42	23	34	50	61	73	91	3.8	36	0.37	3.3	33	41	23	25	50	61	73	91	4.2	39	0.39	4.2	38
42	23	34	50	61	73	91	3.8	36	0.37	3.3	33	43	25	36	50	61	73	91	2.9	32	0.31	3.1	30
44	27	38	50	61	73	91	2.3	30	0.30	2.8	25	43	25	36	50	61	73	91	2.9	32	0.31	3.1	30
44	27	38	50	61	73	91	2.3	30	0.30	2.8	25	45	30	41	53	61	73	91	2.8	32	0.32	3	31
46	33	45	55	61	73	91	3.8	37	0.40	3.3	32	45	30	41	53	61	73	91	2.8	32	0.32	3	31
46	33	45	55	61	73	91	3.8	37	0.40	3.3	32	47	40	50	50	61	73	91	4.7	41	0.48	4.1	37
48	27	38	50	45	73	91	4.2	39	0.43	4.2	38	47	40	50	50	61	73	91	4.7	41	0.48	4.1	37
48	27	38	50	45	73	91	4.2	39	0.43	4.2	38	49	27	38	50	55	73	91	3.9	36	0.40	3.2	32
50	27	38	50	58	73	91	2.8	32	0.34	2.9	29	49	27	38	50	55	73	91	3.9	36	0.40	3.2	32
50	27	38	50	58	73	91	2.8	32	0.34	2.9	29	51	27	38	50	61	73	91	2.2	30	0.29	2.7	23
52	27	38	50	63	73	91	2.7	33	0.33	2.9	28	51	27	38	50	61	73	91	2.2	30	0.29	2.7	23
52	27	38	50	63	73	91	2.7	33	0.33	2.9	28	53	27	38	50	65	78	91	3.8	37	0.39	3.3	32
54	27	38	50	70	73	91	4.3	45	0.47	4.7	39	53	27	38	50	65	78	91	3.8	37	0.39	3.3	32
54	27	38	50	70	73	91	4.3	45	0.47	4.7	39	55	27	38	50	61	73	80	4.3	39	0.43	4.2	38
56	27	38	50	61	73	85	3.8	38	0.40	3.3	32	55	27	38	50	61	73	80	4.3	39	0.43	4.2	38
56	27	38	50	61	73	85	3.8	38	0.40	3.3	32	57	27	38	50	61	73	88	2.9	33	0.34	2.8	28
58	27	38	50	61	73	91	2.3	30	0.30	2.5	24	57	27	38	50	61	73	88	2.9	33	0.34	2.8	28
58	27	38	50	61	73	91	2.3	30	0.30	2.5	24	59	27	38	50	61	73	93	2.8	34	0.33	2.8	27

60	27	38	50	61	73	95	3.8	38	0.40	3.2	33
60	27	38	50	61	73	95	3.8	38	0.40	3.2	33	61	27	38	50	61	73	96	4.3	39	0.43	4.3	38

As shown in table 3, test portion No.42～46,49～53,56～60, the maximum temperature difference during transition is below 3.9 ℃, and is low to moderate recovery time below 39 seconds, and the temperature difference of wafer W also is low to moderate below 0.4 ℃, is very desirable.

Its reason is, test portion No.42～46,49～53,56～60, the inside diameter D 22 of its annulus resistance heating body region 4b be plate body 2 the formed annulus resistance heating of outermost body region 4eh outer diameter D length 34～45%, the inside diameter D 33 of annulus resistance heating body region 4cd is 55～56% of an outer diameter D, and the inside diameter D 0 of annulus resistance heating body region 4eh is 85～93% of an outer diameter D.

In addition, test portion No.42～46,49～53,56～60, maximum temperature difference is below 3.3 ℃ in the wafer W face during the intensification transition, and the heating-up time be low to moderate below 33 seconds, demonstrated outstanding characteristic.

In addition, inside diameter D 22 is that 36～41% test portion No.43～45, inside diameter D 33 of outer diameter D are the inside diameter D 0 of 58～63% test portion No.50～52 of outer diameter D and annulus resistance heating body region 4eh, 88～93% test portion No.57～59 for outer diameter D, maximum temperature difference during transition is below 2.9 ℃, be low to moderate recovery time below 34 seconds, the temperature difference of wafer W also is low to moderate below 0.34 ℃, and maximum temperature difference is below 3.1 ℃ in the wafer W face during the intensification transition, heating-up time was low to moderate below 31 seconds, was very desirable.

In addition, inside diameter D 22 is that 37～40% the test portion No.44, inside diameter D 33 of outer diameter D is the inside diameter D 0 of 59～62% test portion No.51 of outer diameter D and annulus resistance heating body region 4eh, 89～92% test portion No.58 for outer diameter D, maximum temperature difference during transition is below 2.3 ℃, be low to moderate recovery time below 30 seconds, the temperature difference of wafer W also is low to moderate below 0.30 ℃, and maximum temperature difference is below 2.8 ℃ in the wafer W face during the intensification transition, heating-up time was low to moderate below 28 seconds, was ideal.

[embodiment 4]

Make many tabular ceramic bodies that diameter is different similarly to Example 2.

Afterwards, the same with embodiment 2, form through hole at 3 places.

Next, the same with embodiment 2, form the resistance heater 5 of thick 50 μ m.The figure setting of resistance heater 5, identical with embodiment 2, the diameter of the circumscribed circle C of 4 resistance heating body region of outermost is 310mm.In resistance heater 5, install and fix power supply 6 afterwards,, produce the different tabular ceramic body 2 of diameter by like this by wax.

In addition, the formation that substrate shell and contact component are arranged, identical with

embodiment

1 and 2, overlapping tabular ceramic body is arranged in the peristome of substrate shell at this, at the peripheral part in-and-out bolt, allow tabular ceramic body directly not contact, the contact component of ring-type is arranged, and be situated between flexible body and spiral shell is tightened up a screw from the contact component side and be situated between with the substrate shell is arranged, by carrying out flexible fastening like this, obtain the chip heating device of embodiment 4.

The chip heating device of made and embodiment 1 the same the evaluation.

The result is as shown in table 4.

[table 4]

Test portion No.	The circumscribed circle of relative resistance heater 5, the ratio of the diameter of tabular ceramic body 2 (%)	The temperature difference of wafer (℃)	Response time (second)
Test portion No.		The temperature difference of wafer (℃)	Response time (second)	145	85	0.48	35
○146	90	0.28	29	145	85	0.48	35
○146	90	0.28	29	○147	92	0.16	25
○148	93	0.16	24	○147	92	0.16	25
○148	93	0.16	24	○149	95	0.16	25
○150	96	0.24	27	○149	95	0.16	25
○150	96	0.24	27	○151	97	0.26	28
152	99	0.42	32	○151	97	0.26	28

Zero mark is represented outstanding especially

The test portion No.145 of table 4, the ratio with the diameter of tabular ceramic body between the circumscribed circle of resistance heater is low to moderate 85%, and temperature difference is up to 0.48 ℃ in the face of wafer, and particularly response time is 35 seconds, and some is big slightly.

Test portion No.152, between the circumscribed circle of resistance heater with the ratio of the diameter of tabular ceramic body up to 99%, temperature difference is up to 0.42 ℃ in the face of wafer, response time is 32 seconds, some is big slightly.

Relative therewith, test portion No.146～151, temperature difference is low to moderate below 0.28 ℃ in the face of wafer, and response time also was low to moderate below 29 seconds, very outstanding, therefore can learn that the ratio with the diameter of tabular ceramic body between the circumscribed circle of resistance heater is 90～97%, is outstanding chip heating device.

[embodiment 5]

Make tabular ceramic body similarly to Example 1.

But the print thickness of slip is 20 μ m, in addition, prepares the test portion that some have changed resistance heater ratio of area occupied in the circumscribed circle that surrounds resistance heater.

Afterwards, with embodiment 1 the same the evaluation.The result is as shown in table 5.

[table 5]

Test portion No.	The ratio (%) of area occupied among the circumscribed circle C of the above-mentioned ribbon resistance heater 5 of ribbon resistance heater 5 relative encirclements	The temperature difference of wafer (℃)
Test portion No.		The temperature difference of wafer (℃)	160	3	0.35
○161	5	0.24	160	3	0.35
○161	5	0.24	◎162	10	0.19
☆163	15	0.13	◎162	10	0.19
☆163	15	0.13	☆164	20	0.12
◎165	25	0.18	☆164	20	0.12
◎165	25	0.18	○166	30	0.23
167	40	0.34	○166	30	0.23

The result is, shown in test portion No.160, the ratio of resistance heater area occupied in the circumscribed circle that surrounds resistance heater is the test portion 5% below, and the interior temperature difference of the face of wafer is 0.35 ℃, and is more or less big.In addition, shown in test portion No.167, if the ratio of resistance heater area occupied in the circumscribed circle that surrounds resistance heater has surpassed 30%, just occurred a ℃ higher focus in the part of wafer, temperature difference is 0.34 ℃ in the face of wafer, and is more or less big.

Relative therewith, shown in test portion No.161～166, the ratio of resistance heater area occupied in the circumscribed circle of resistance heater is 5～30% test portion, and temperature difference can be low to moderate below 0.24 ℃ in the face of wafer, and is very outstanding.

In addition, shown in test portion No.162～165, by allowing the ratio of resistance heater area occupied in the circumscribed circle of resistance heater be 10～25%, can allow temperature difference is in 0.19 ℃ in the face of wafer, in addition, shown in test portion No.163,164, by allowing the ratio of resistance heater area occupied in the circumscribed circle of resistance heater be 15～20%, can allow the interior temperature difference of face of wafer be reduced in 0.13 ℃, especially outstanding.

[embodiment 6]

Among the embodiment 6, except being arranged on power supply and temperature element on the position shown in Fig. 4, with the embodiment 1 the same test portion of making, and with embodiment 1 the same the evaluation.

Here, produce 8 kinds of wafer holding componentss that changed interval L1 and the ratio that is connected the interval L4 between the circular arc band (L1/L4 * 100%) between the circular arc band, respectively as test portion 201～208.

In addition, as a comparative example, produce the test portion that is provided with resistance heater power supply and temperature element as shown in figure 23, (test portion No.209) estimates as a comparative example.

The result is as shown in table 6.

[table 6]

Test portion No.	The structure of resistance heating body region	The position of the form of resistance heater and power supply and temperature element	L1/L4× 100(％)	The temperature difference of wafer (℃)
Test portion No.	The structure of resistance heating body region		L1/L4× 100(％)	The temperature difference of wafer (℃)	^*201	A plurality of circles, ring and fan-shaped	Fig. 4	20	0.49
202	A plurality of circles, ring and fan-shaped	Fig. 4	30	0.41	^*201	A plurality of circles, ring and fan-shaped	Fig. 4	20	0.49
202	A plurality of circles, ring and fan-shaped	Fig. 4	30	0.41	203	A plurality of circles, ring and fan-shaped	Fig. 4	40	0.37
204	A plurality of circles, ring and fan-shaped	Fig. 4	50	0.35	203	A plurality of circles, ring and fan-shaped	Fig. 4	40	0.37
204	A plurality of circles, ring and fan-shaped	Fig. 4	50	0.35	205	A plurality of circles, ring and fan-shaped	Fig. 4	60	0.36
206	A plurality of circles, ring and fan-shaped	Fig. 4	80	0.41	205	A plurality of circles, ring and fan-shaped	Fig. 4	60	0.36
206	A plurality of circles, ring and fan-shaped	Fig. 4	80	0.41	207	A plurality of circles, ring and fan-shaped	Fig. 4	90	0.47
208	A plurality of circles, ring and fan-shaped	Fig. 4	95	0.49	207	A plurality of circles, ring and fan-shaped	Fig. 4	90	0.47
208	A plurality of circles, ring and fan-shaped	Fig. 4	95	0.49	^*209	A plurality of whirlpool shape rings and fan-shaped	Figure 12	120	1.73

^*Mark is represented the embodiment beyond the present invention.

In addition, the ratio of the L1/L4 of test portion No.209 surpass 120%, too big, so the temperature difference of wafer is up to 1.73 ℃.

In addition, in a pair of distance of turning back between the circular arc band on the same circumference, than little test portion No.201～208 of the distance between circular arc figure adjacent on the radial direction, the temperature difference of wafer is below 0.5 ℃, has demonstrated outstanding characteristic.

In addition, the ratio of the L1/L4 of test portion No.202～206 is 30～80%, and the temperature difference of wafer is for being low to moderate below 0.41 ℃, and is more outstanding.

[embodiment 7]

Among the embodiment 7, identical with embodiment 2 except the ratio with the D1/D among the embodiment 2 * 100%, D2/D * 100% and D3/D * 100% has carried out partly change, produce relevant test portion 211～235 of the present invention.

In addition, among the embodiment 7, between circular resistance

heating body region

4a, 4b, be provided with wide 5% annular white space for diameter D, form power supply 6 and picker through hole, between circular regional 4b, 4cd, wide 5% annular white space for diameter D is set, form power supply therein.In addition, between circular regional 4cd, 4eh, wide 10% annular white space for diameter D is set, forms wafer anchor and power supply therein.

To test portion No.211～235 and embodiment 2 the same evaluations that as above making.

The result is as shown in table 7.

In addition, test portion No.236～239 in the table 7 are in order to compare with the test portion of embodiment 7, are the data of the comparative example of embodiment 2.

[table 7]

Test portion No.	The structure of resistance heating body region	The resistance heater number of regions	D1/D× 100(％)	D2/D× 100(％)	?D3/D× ?100(％)	The temperature difference of wafer (℃)	Response time (second)
Test portion No.	The structure of resistance heating body region	The resistance heater number of regions	D1/D× 100(％)	D2/D× 100(％)	?D3/D× ?100(％)	The temperature difference of wafer (℃)	Response time (second)	211	A plurality of circular and fan-shaped	8	18	50	75	0.49	45
212	A plurality of circular and fan-shaped	8	23	50	75	0.39	37	211	A plurality of circular and fan-shaped	8	18	50	75	0.49	45
212	A plurality of circular and fan-shaped	8	23	50	75	0.39	37	213	A plurality of circular and fan-shaped	8	25	50	75	0.32	34
214	A plurality of circular and fan-shaped	8	27	50	75	0.31	33	213	A plurality of circular and fan-shaped	8	25	50	75	0.32	34
214	A plurality of circular and fan-shaped	8	27	50	75	0.31	33	215	A plurality of circular and fan-shaped	8	30	50	75	0.33	34
216	A plurality of circular and fan-shaped	8	33	50	75	0.42	38	215	A plurality of circular and fan-shaped	8	30	50	75	0.33	34
216	A plurality of circular and fan-shaped	8	33	50	75	0.42	38	217	A plurality of circular and fan-shaped	8	40	50	75	0.48	39
218	A plurality of circular and fan-shaped	8	27	40	75	0.49	45	217	A plurality of circular and fan-shaped	8	40	50	75	0.48	39
218	A plurality of circular and fan-shaped	8	27	40	75	0.49	45	219	A plurality of circular and fan-shaped	8	27	45	75	0.43	39
220	A plurality of circular and fan-shaped	8	27	47	75	0.38	34	219	A plurality of circular and fan-shaped	8	27	45	75	0.43	39
220	A plurality of circular and fan-shaped	8	27	47	75	0.38	34	221	A plurality of circular and fan-shaped	8	27	48	75	0.32	31
222	A plurality of circular and fan-shaped	8	27	50	75	0.31	30	221	A plurality of circular and fan-shaped	8	27	48	75	0.32	31
222	A plurality of circular and fan-shaped	8	27	50	75	0.31	30	223	A plurality of circular and fan-shaped	8	27	51	75	0.32	31
224	A plurality of circular and fan-shaped	8	27	53	75	0.39	34	223	A plurality of circular and fan-shaped	8	27	51	75	0.32	31
224	A plurality of circular and fan-shaped	8	27	53	75	0.39	34	225	A plurality of circular and fan-shaped	8	27	55	75	0.42	39
226	A plurality of circular and fan-shaped	8	27	60	75	0.48	44	225	A plurality of circular and fan-shaped	8	27	55	75	0.42	39
226	A plurality of circular and fan-shaped	8	27	60	75	0.48	44	227	A plurality of circular and fan-shaped	8	27	50	50	0.49	45

228	A plurality of circular and fan-shaped	8	27	50	63	0.43	39
228	A plurality of circular and fan-shaped	8	27	50	63	0.43	39	229	A plurality of circular and fan-shaped	8	27	50	68	0.38	34
230	A plurality of circular and fan-shaped	8	27	50	71	0.32	31	229	A plurality of circular and fan-shaped	8	27	50	68	0.38	34
230	A plurality of circular and fan-shaped	8	27	50	71	0.32	31	231	A plurality of circular and fan-shaped	8	27	50	73	0.31	27
232	A plurality of circular and fan-shaped	8	27	50	75	0.32	31	231	A plurality of circular and fan-shaped	8	27	50	73	0.31	27
232	A plurality of circular and fan-shaped	8	27	50	75	0.32	31	233	A plurality of circular and fan-shaped	8	27	50	78	0.37	34
234	A plurality of circular and fan-shaped	8	27	50	83	0.42	34	233	A plurality of circular and fan-shaped	8	27	50	78	0.37	34
234	A plurality of circular and fan-shaped	8	27	50	83	0.42	34	235	A plurality of circular and fan-shaped	8	27	50	90	0.49	48
^*236	Rectangle	8	-	-	-	2.40	63	235	A plurality of circular and fan-shaped	8	27	50	90	0.49	48
^*236	Rectangle	8	-	-	-	2.40	63	^*237	Single annulus in the past	5	-	-	-	1.80	55
^*238	Fan-shaped	4	-	-	-	2.50	73	^*237	Single annulus in the past	5	-	-	-	1.80	55
^*238	Fan-shaped	4	-	-	-	2.50	73	^*239	Single annulus	1	-	-	-	3.60	75

^*Mark is represented the embodiment beyond the present invention.

In the heater 1 of the present invention, central part has border circular areas, and its outside has the heater 1 of test portion No.211～235 of concentrically ringed 3 annulus inner regions, discontented 0.5 ℃ of the temperature difference of wafer W, and response time is below 48 seconds, very outstanding.In addition, the outer diameter D 1 in central part zone be its outermost zone outer diameter D 23～33%, outer diameter D 2 is 40～55% of an outer diameter D, outer diameter D 3 is 63～83% a heater 1 of outer diameter D, is test portion No.212～216,219～225,228～234 in the table 7.The temperature difference of wafer W is low to moderate below 0.43 ℃, and response time is below 39 seconds, has demonstrated outstanding characteristic.

In addition, the outer diameter D 1 in central part zone is the heater of 25～30% test portion No.213～215 of the circumscribed circle D of resistance heater, and the temperature difference of wafer is low to moderate below 0.33 ℃, and response time is low to moderate below 34 seconds, and is very desirable.In addition, outer diameter D 1 is the heater of 26～29% the test portion No.214 of D, and the temperature difference of wafer is low to moderate below 0.31 ℃, and response time is low to moderate below 33 seconds, and is even more ideal.

In addition, outer diameter D 2 is the chip heating device of 47～53% test portion No.220～224 of D, and the temperature difference of wafer is below 0.39 ℃, and response time is below 34 seconds. be very desirable.In addition, outer diameter D 2 is the chip heating device of 48～51% test portion No.221～223 of D, and the temperature difference of wafer is below 0.32 ℃, and response time is below 31 seconds, and is desirable more.

In addition, outer diameter D 3 is the heater of 68～78% test portion No.229～233 of D, and the temperature difference of wafer is below 0.38 ℃, and response time is below 39 seconds, is very desirable.In addition, outer diameter D 3 is the chip heating device of 71～75% test portion No.230～232 of D, and the temperature difference of wafer is below 0.32 ℃, and response time is below 34 seconds, and is desirable more.In addition, outer diameter D 3 is 67～70% the test portion No.231 of D, 232 chip heating device, and the temperature difference of wafer is below 0.23 ℃, and response time is below 28 seconds, and is desirable more.

Relative therewith, test portion No.236～239 beyond the present invention, the temperature difference in the wafer face is up to more than 1.8 ℃, and response time is also up to 55 seconds, and is very undesirable.

[embodiment 8]

Here, the same with embodiment 7, make many by the thickness of slab 3mm that aluminum nitride sintered product constituted, the discoid tabular ceramic body 2 of diameter 315mm～345mm.In the tabular ceramic body 2, form 3 place's through holes in the round equal intervals of distance center 60mm, the perforation bore is 4mm.

Afterwards, the same with embodiment 7, form resistance heater 5, the heater of made and embodiment 7 the same evaluations, by like this, the ratio of diameter of confirming the external diameter of a circle of resistance heater 5 and tabular ceramic body 2 is to the influence of characteristic.

The result is as shown in table 8.

[table 8]

Test portion No.	The external diameter of a circle of resistance heater 5 is with respect to the ratio (%) of the diameter of tabular ceramic body 2	The temperature difference of wafer (℃)	Response time (second)
Test portion No.		The temperature difference of wafer (℃)	Response time (second)	245	85	0.47	34
○246	90	0.31	31	245	85	0.47	34
○246	90	0.31	31	○247	92	0.24	26
○248	93	0.23	25	○247	92	0.24	26
○248	93	0.23	25	○249	95	0.25	26
○250	96	0.29	31	○249	95	0.25	26
○250	96	0.29	31	○251	97	0.31	31
252	99	0.44	35	○251	97	0.31	31

Zero mark is represented outstanding especially

The test portion No.245 of table 8, the ratio with the diameter of tabular ceramic body between the circumscribed circle of resistance heater is low to moderate 85%, and temperature difference is up to 0.47 ℃ in the face of wafer, and particularly response time is 34 seconds, and some is big slightly.

Test portion No.252, between the circumscribed circle of resistance heater with the ratio of the diameter of tabular ceramic body up to 99%, temperature difference is up to 0.44 ℃ in the face of wafer, response time is 35 seconds, some is big slightly.

Relative therewith, test portion No.246～251, temperature difference is low to moderate below 0.31 ℃ in the face of wafer, and response time also was low to moderate below 31 seconds, very outstanding, therefore can learn that the ratio with the diameter of tabular ceramic body between the circumscribed circle of resistance heater is 90～97%, is outstanding chip heating device.

In addition, between the circumscribed circle of resistance heater be 92～95% test portion No.247～249 with the ratio of the diameter of tabular ceramic body, temperature difference is low to moderate below 0.25 ℃ in the face of wafer, and response time also is low to moderate below 26 seconds, and is even more ideal.

[embodiment 9]

Among the embodiment 9, the print thickness of slip is 20 μ m, and the same test portions that changed resistance heater ratio of area occupied in the circumscribed circle that surrounds resistance heater made from embodiment 6.

Afterwards, with embodiment 6 the same evaluations.The result is as shown in table 9.

[table 9]

Test portion No.	The ratio (%) of area occupied among the circumscribed circle C of the above-mentioned ribbon resistance heater 5 of ribbon resistance heater 5 relative encirclements	The temperature difference of wafer (℃)
Test portion No.		The temperature difference of wafer (℃)	260	3	0.45
261	5	0.32	260	3	0.45
261	5	0.32	262	10	0.24
263	15	0.16	262	10	0.24
263	15	0.16	264	20	0.17
265	25	0.24	264	20	0.17
265	25	0.24	266	30	0.32
267	40	0.46	266	30	0.32

The result is shown in test portion No.260, and the ratio of resistance heater area occupied in the circumscribed circle that surrounds resistance heater is the test portion below 5%, and temperature difference is 0.45 ℃ in the face of wafer, and is more or less big.In addition, shown in test portion No.267, if the ratio of resistance heater area occupied in the circumscribed circle that surrounds resistance heater has surpassed 30%, just occurred a ℃ higher focus in the part of wafer, temperature difference is 0.46 ℃ in the face of wafer, and is more or less big.

Relative therewith, shown in test portion No.261～266, the ratio of resistance heater area occupied in the circumscribed circle of resistance heater is 5～30% test portion, and temperature difference can be low to moderate below 0.32 ℃ in the face of wafer, and is very outstanding.

In addition, shown in test portion No.262～265, by allowing the ratio of resistance heater area occupied in surrounding the circumscribed circle of resistance heater be 10～25%, can allow temperature difference is in 0.24 ℃ in the face of wafer, in addition, shown in test portion No.263,264, by allowing the ratio of resistance heater area occupied in the circumscribed circle of resistance heater be 15～20%, can allow the interior temperature difference of face of wafer be reduced in 0.17 ℃, especially outstanding.

[embodiment 10]

Among the embodiment 10, at first the same with embodiment 1, be produced as follows described tabular ceramic body.

Here, aluminum nitride sintered product is carried out attrition process, produce thickness of slab 3mm, the discoid tabular ceramic body 2 of diameter 330mm, and thickness of slab 4mm, and periphery has circular protuberance, and the thickness of slab of the central part of diameter 301mm is the tabular ceramic body of 3mm shape.

Afterwards, form 3 place's through holes in the concentric circles equal intervals of distance center 60mm, the perforation bore is 4mm.

Next, by the method identical, form the resistance heater 5 of thick 50 μ m with embodiment 1.

Among the embodiment 10, the configuration of resistance heating body region 4, shown in Figure 10 B, form 1 circular resistance heating body region at central part, the annulus in its outside is divided into two fan-shaped resistance heating body region, further again the annulus outside it is divided into 4 fan-shaped resistance heating body region, amounts to 7 resistance heating body region of formation.

In addition, use identical with the embodiment 1 substrate shell that has, have in the peristome of substrate shell at this, overlapping tabular ceramic body, at its peripheral part in-and-out bolt, allow tabular ceramic body directly not contact, have the contact component of ring-type to be fixed up and be situated between, by obtaining heater like this with the substrate shell is arranged.

In addition, the section of contact component 17 is by the formation ring-type.The width of L shaped section portion is 5mm, and with the contact width of tabular ceramic body be 4mm.In addition, the material of contact component is used polybenzimidazole resin.

Afterwards, at the center of putting section, 3 inner projection being installed at distance center 85mm place, is that 5 inner projection are installed at the 130mm place at distance center then, as test portion No.301～304.

Among the test portion No.301, the internal diameter of the fixing hole of the periphery of tabular ceramic body 2 is 3.5mm, and the diameter of bolt is 3mm, and the conical peripheral protuberance in 5 places equidistantly is installed.

Among the test portion No.302, the internal diameter of the fixing hole of the periphery of tabular ceramic body 2 is 4.5mm, and the diameter of bolt is 3mm, and the cylindric peripheral protuberance in 5 places equidistantly is installed loosely.

Among the test portion No.303, the internal diameter of the fixing hole of the periphery of tabular ceramic body 2 is 3mm, and the diameter of bolt is 3mm, equidistantly is provided with the cylindric peripheral protuberance in 5 places securely, is former heater.

In addition, test portion No.304 is the periphery at tabular ceramic body, is formed with than putting the former heater that section protrudes the ring-type of 1mm.

Test portion No.305 is the periphery at tabular ceramic body, and the cylindric peripheral protuberance in 5 places equidistantly is installed loosely, and does not have the former heater of inner projection.

The evaluation of the chip heating device of made uses diameter that 29 places are embedded with the temperature detecting resistance body to carry out with wafer as the thermometric of 300mm.Give each chip heating device energising, wafer W is warmed up to 200 ℃ from 25 ℃, the temperature of wafer W is set at after 200 ℃, keep the regular hour, make the mean temperature of wafer W be stabilized in 200 ℃ ± 0.5 ℃ the scope by 5 minutes.Afterwards, the rising picker takes out wafer W, after the room temperature with the wafer W cooling, is placed on once more in the heater, and the mean temperature that determines wafer W reaches the needed time in the scope that is stabilized in 200 ℃ ± 0.5 ℃, as response time.After 30 minutes in the mean temperature of wafer W keep moment of 200 ℃, measure temperature difference in the face of wafer W

The result is as shown in table 10.

[table 10]

Test portion No.	Having or not of isolated peripheral protuberance	Having or not of circular peripheral protuberance	The inner projection volume has or not	The gap of fixing hole and bolt (internal diameter of fixing hole and the diameter of bolt poor)	Temperature difference in the face of wafer W (℃)	Response time (second)
Test portion No.	Having or not of isolated peripheral protuberance	Having or not of circular peripheral protuberance	The inner projection volume has or not		Temperature difference in the face of wafer W (℃)	Response time (second)	301	Have	Do not have	Have	0.5	0.31	32
302	Have	Do not have	Have	1.5	0.35	35	301	Have	Do not have	Have	0.5	0.31	32
302	Have	Do not have	Have	1.5	0.35	35	303	Have	Do not have	Have	0	0.42	52
304	Do not have	Have	Have	Do not have	0.41	63	303	Have	Do not have	Have	0	0.42	52
304	Do not have	Have	Have	Do not have	0.41	63	305	Have	Do not have	Do not have	0.5	0.63	47

Test portion No.301,302 for be provided with isolated peripheral protuberance 304 at the periphery of putting section, has inner projection 8, and the internal diameter of the fixing hole of above-mentioned peripheral protuberance 304 is bigger than the diameter of bolt, gapped heater of the present invention between bolt and the fixing hole.Test portion No.301,302, temperature difference is low to moderate 0.31 ℃, 0.35 ℃ in the face of wafer W, and response time was low to moderate 32 seconds, 35 seconds, has demonstrated outstanding characteristic.

In addition, if the putting in the section of peripheral protuberance, the section that demonstrates parallel profile then demonstrates the excellent characteristic shown in test portion No.301,302 for circular.

Relative therewith, put the strong test portion No.303 that cylindric protuberance is installed in the periphery of section, more to the heat that peripheral protuberance flows out, temperature difference is 0.42 ℃ in the face of wafer W, some is little slightly, but response time is up to 52 seconds, thereby can't produce uniform etchant resist.

In addition, the periphery of putting section has the test portion No.304 of circular protuberance, and temperature difference is 0.41 ℃ in the face of wafer W, but response time is up to 63 seconds, thereby can't produce uniform etchant resist.

In addition, do not have the test portion No.305 of inner projection, temperature difference is up to 0.63 ℃ in the face of wafer W, and response time is 47 seconds also, and some is big slightly.

In addition, peripheral protuberance is conical test portion No.301, is that test portion No.302 cylindraceous compares with peripheral protuberance, and temperature difference and response time are less in the face of wafer, have demonstrated more outstanding characteristic.

[embodiment 11]

The same with embodiment 10, make many thickness of slab 3mm, the discoid tabular ceramic body 2 of diameter 330mm.In addition, the same with embodiment 10, form 3 place's through holes in the round equal intervals of distance center 60mm, the perforation bore is 4mm.

Afterwards, the same with embodiment 10, form the resistance heater as mentioned above 5 of thick 50 μ m.Among the embodiment 11, the configuration of the figure of resistance heater 5, radial from central division circle and the annulus of being divided into, form 1 figure at central part, in the circular part in its outside, form two figures, further form 4 figures, amount to 7 figures of formation at most peripheral.

Afterwards, allow the diameter of circumscribed circle C of 4 figures of most peripheral be 310mm, the diameter of the tabular ceramic body of conversion is made.Scolder installs and fixes power supply in resistance heater then, by producing heater portion like this.

Next, use identical with the embodiment 10 substrate shell that has, have in the peristome of substrate shell at this, overlapping tabular ceramic body, at its peripheral part in-and-out bolt, allow tabular ceramic body directly not contact with the substrate shell is arranged, and be situated between L shaped contact component is arranged, and be situated between flexible body spiral shell screwing and be fixed up from the contact component side, by obtaining heater like this.

In addition, be the peripheral protuberance 304 of 10mm at the above-mentioned screw fixed diameter of periphery dual-purpose.The size of the inscribed circle of periphery protuberance 4 is diameter 300.0～315mm.

In addition, the aluminium nitride of the aluminium oxide of the purity 96% by being added with 0.1～5 quality %, mullite, yittrium oxide is made peripheral protuberance.In addition, the periphery of each peripheral protuberance is processed by omnipotent abrasive disk, uses free whetstone grain that periphery is ground as required, produces Ra and is adjusted to 0.005～10 peripheral protuberance 304.

Like this, the various heaters that the pyroconductivity of peripheral protuberance 304 is different are as test portion No.321～329.

The evaluation of the heater of made uses diameter that 29 places are embedded with the temperature detecting resistance body to carry out with wafer as the thermometric of 300mm.Give each chip heating device energising, wafer W is warmed up to 200 ℃ from 25 ℃, measure from the temperature of wafer W and be set at after 200 ℃, be stabilized in 200 ℃ ± 0.5 ℃ interior time of scope to the mean temperature of wafer W, as response time by 5 minutes.Afterwards, allow the wafer picker from put section above outstanding, wafer W is taken out from putting section, by not shown motion arm wafer is taken out.By motion arm wafer W is placed on the wafer picker once more afterwards, allows the wafer picker descend,, wafer W is placed on the upper end of inner projection by peripheral protuberance channeling conduct.Afterwards, the picker that rises once more after 3 minutes takes out wafer W.Repeat the placement of 1000 these wafer W and take out, afterwards,, estimate accompanying particle in the width of 20mm of periphery of bottom surface of wafer W and the side by the particle counter that TENKOR company is produced.

The result is as shown in table 11.

As shown in table 11, the set bolt of fixing above-mentioned peripheral protuberance connects from above-mentioned tabular ceramic body, and test portion No.321～329 that are connected and fixed with shell, and temperature difference all is low to moderate below 0.5 ℃ in the face of wafer, response time also was low to moderate below 35 seconds, had demonstrated outstanding characteristic.

In addition, shown in test portion No.322～329, if the surface roughness Ra of the outer peripheral face of peripheral protuberance less than 3.0, just the generation number of particle can be reduced to below 2000, very desirable.

In addition, the test portion No.329 of table 11, because the thermal capacity of peripheral protuberance is up to 1.7 (J/K), so temperature difference is 0.40 ℃ in the face of wafer W, and some is big slightly, and response time is 35 seconds also, and some is big slightly.

Relative therewith, the thermal capacity of the peripheral protuberance of test portion No.322～328 is less than corresponding to 3 times of the thermal capacity of the tabular ceramic body of peripheral protuberance, and temperature difference is low to moderate below 0.34 ℃ in the face of wafer W, and response time also was low to moderate below 34 seconds, and is very desirable.

In addition, as test portion No.323～326, if the thermal capacity of peripheral protuberance less than corresponding to 1.5 times of the thermal capacity of the tabular ceramic body of peripheral protuberance, temperature difference is low to moderate below 0.23 ℃ in the face of wafer W just can allow, response time also was low to moderate below 25 seconds, and is even more ideal.

In addition, above-mentioned inner projection is 0.05～0.5mm from putting the outstanding height of section, above-mentioned inner projection, above-mentioned inner projection, with above-mentioned peripheral protuberance in have 1 at least in 0.5 times of scope of internal diameter of the inscribed circle that connects, in 0.5～1 times scope of the diameter of above-mentioned inscribed circle, have at least more than 3, be arranged to concentric circles respectively, by like this, can allow the interior temperature difference of face of wafer reduce to below 0.4 ℃, be very desirable.

[embodiment 12]

Among the embodiment 12, the at first following test portion that produces.

In aluminium nitride powder, add the yittrium oxide of mass conversion 2.0 quality %, further use isopropyl alcohol and polyurethane ball, carry out 48 hours mixing by ball mill, by making the slip of aluminium nitride like this.Afterwards, allow the aluminium nitride slip that is mixed with third rare class adhesive in this slip, from 200 mesh sieve holes, pass through, remove after the chip of polyurethane ball and ball mill wall, carry out drying, produce the prilling powder of aluminium nitride at explosion-proof drying machine.

Above-mentioned prilling powder is filled in the mould of diameter 240mm, produces the formed body of thick 30mm.In this formed body, bury underground in the position of coiled type resistance heater and form groove.

The form that is shaped as similar Figure 12 of resistance heater, the outside at the resistance heater 405O at the center that is arranged on tabular ceramic body also is provided with resistance heater.Like this, roughly corresponding to Figure 12, preparing corresponding to L401～L407 is 12mm, and conversion the position of resistance heater of d401～d407, be formed with the formed body of various grooves.Afterwards, will connect power supply in addition, the molybdenum coil that is shaped as groove shape and anneals is inserted in the above-mentioned groove, fills the aluminium nitride prilling powder on the top of coil.By the anchor clamps of the groove shape of making in advance, pressurizeed in the top of the prilling powder of being filled.Filling and pelletizing powder and pressurizeing again once more in the geosynclinal concave portion of being pressurizeed allows the top of prilling powder of being filled in the surface of formed body and the groove roughly form same.

Afterwards,, heated 1 hour down, carry out the unsticking mixture and handle at 500 ℃ to being embedded with the formed body of above-mentioned resistance heater.The formed body of having implemented the processing of unsticking mixture is inserted in the carbon die, is heated to 1800 ℃, pressurize from above-below direction, obtain being embedded with the ceramic sintered bodies of resistance heater by 34MPa.

Attrition process is carried out in periphery and top and bottom to resulting sintered body, makes tabular ceramic body.In addition, in the power supply middle punch, scolder is installed power supply terminal, produces heater.

Afterwards this ceramic heater is arranged in the vacuum tank, in putting section, place semiconductor wafer, speed by 20 ℃/minute is warmed up to design temperature, after will keeping 10 minutes as 500 ℃ of design temperature, measure temperature difference in the face of wafer surface by thermoviewer through seeing through window from outside.The result is as shown in table 12.

[table 12]

^*Label table is shown outside the scope of the present invention.

A pair of formation on the same circumference of the present invention spacing between the resistance heater of shape of turning back, than little test portion No.401～406 of distance between the center line of formation circular arc adjacent on the radial direction, temperature difference is low to moderate below 2.5 ℃ in the face on wafer W surface, is very desirable.

In addition, in turn back spacing between the resistance heater of shape of a pair of formation on the same circumference, 30%～80% test portion No.402～405 for the distance between the center line of formation circular arc adjacent on the radial direction, temperature difference is low to moderate below 1.9 ℃ in the face of wafer surface, and is even more ideal.

But, in turn back spacing between the resistance heater of shape of a pair of formation on the same circumference, 1.3 times or 1.5 times of big test portion No.407,408 for the distance between the center line of formation circular arc adjacent on the radial direction, produce cold spot between the adjacent circular arc, in the face of wafer surface temperature difference up to 5 ℃, 15 ℃, can't be used as up-to-date use in semiconductor manufacturing apparatus ceramic heater.

[embodiment 13]

Among the embodiment 13, the same with embodiment 12, make the groove of the resistance heater identical, and adjusted the ceramic heater of spacing of the most peripheral of the coil of being buried underground with the data No.405 of embodiment 12.

Afterwards, be arranged in the vacuum tank, be warmed up to 600 ℃ from 20 ℃ with 20 ℃/minute speed.Temperature difference in the face of putting section when measuring in the temperature-rise period of this moment 500 ℃ transition by thermoviewer.The result is as shown in table 13.

[table 13]

Test portion No.	The spacing of the resistance heater except that most peripheral (mm)	The spacing of most peripheral resistance heater (mm)	Temperature difference in the face of putting section during 500 ℃ transition (℃)
Test portion No.		The spacing of most peripheral resistance heater (mm)		411	4.8	3.4	13
412	4.8	3.7	14	411	4.8	3.4	13
412	4.8	3.7	14	413	4.8	4.1	16
414	4.8	4.4	18	413	4.8	4.1	16
414	4.8	4.4	18	415	4.8	4.7	21
416	4.8	4.8	34	415	4.8	4.7	21

The spacing that is the coiled type resistance heater of the most peripheral that concentric circles is provided with than closely spaced test portion No.411～415 of its inboard resistance heater, puts that temperature difference is below 21 ℃ in the face of section, has demonstrated outstanding characteristic.

[embodiment 14]

Among the embodiment 14,, make the tabular ceramic body of the coil-span that has changed resistance heater by the method identical with embodiment 12.As shown in figure 13, produce the ceramic heater that the tubular holding components is arranged in the opposition side diffusion-bonded of putting section.Afterwards, be arranged in the vacuum tank, in putting section, make wafer, the same with embodiment 13, measured the temperature difference when putting the crossing of section.The result is as shown in table 14.

[table 14]

Test portion No.	Be positioned at the spacing (mm) of helical coil of the inboard of holding components	Be positioned at the spacing (mm) of helical coil in the outside of holding components	The spacing of most peripheral resistance heater (mm)	Temperature difference in the face of putting section during 500 ℃ transition (℃)
Test portion No.			The spacing of most peripheral resistance heater (mm)		431	1.9	4.8	3.8	15
432	2.2	4.8	3.8	14	431	1.9	4.8	3.8	15
432	2.2	4.8	3.8	14	433	2.9	4.8	3.8	15
434	3.3	4.8	3.8	16	433	2.9	4.8	3.8	15
434	3.3	4.8	3.8	16	435	4.1	4.8	3.8	17
436	4.8	4.8	3.8	23	435	4.1	4.8	3.8	17

Engage the holding components that tubular is arranged in the opposing party's interarea of tabular ceramic body 402, the coil-span of the resistance heater of these tubular holding components 418 inboards, little test portion No.431～435 of coil-span than the resistance heater in these tubular holding components 8 outsides, temperature difference is below 17 ℃ in the face of putting section when 500 ℃ transition, and is very outstanding.

In addition, the coil-span of the resistance heater of tubular holding components 418 inboards, with the identical test portion No.436 of coil-span of the resistance heater in these tubular holding components 418 outsides, temperature difference is 23 ℃ in the face of putting section when 500 ℃ transition, and some is big slightly.Can learn from this result, engage the ceramic heater that the tubular holding components is arranged in the tabular ceramic body, some is big slightly to put in the face of section temperature difference.

[embodiment 15]

Among the embodiment 15, the same with embodiment 13, produce the shape of burying underground that has changed resistance heater 405, and engage the ceramic heater 401 that tubular holding components 8 is arranged.

In addition, determine respectively among the shape Q of the resistance heater of being buried underground in the tabular ceramic body 402 405, be arranged in resistance value density (R1/S1) than the per unit area of the resistance heater 405a of tubular holding components 418 regional Q1 in the inner part, and be arranged in resistance value density (R2/S2) than the per unit area of the resistance heater 405b of above-mentioned tubular holding components 418 regional Q2 in the outer part, be respectively 0.019 Ω/cm ²With 0.015 Ω/cm ², resistance value density (R1/S1) is 1.27 times of resistance value density (R2/S2).

Next, side's interarea to resulting tabular ceramic body 402 carries out mask, make that center line average roughness (Ra) is 0.1 μ m, section 3 is put in formation, simultaneously, in the opposing party's interarea of above-mentioned tabular ceramic body 402, wear after two recesses that are communicated with resistance heater 405, in this recess, install and fix, obtain heater 401 by the silver-copper brazing alloy power supply terminal scolder that the Fe-Co-Ni alloy is made.

Afterwards, below this ceramic heater 401, it is 70mm that diffusion bond has external diameter, wide be 8mm flange 8a, by the aluminium nitride ceramics made tubular holding components 418 identical with above-mentioned tabular ceramic body 402.With this heater 401 as test portion No.441.

In addition, as a comparative example,, produce resistance value density R1/S1 and R2/S2 and be 0.015 Ω/cm with above-mentioned the same ²Tabular ceramic body in engage the ceramic heater (test portion No.442) that tubular holding components 418 is arranged.

Afterwards, the alternating voltage of loading 200V for the heater of made allows with 20 ℃/minute speed and to put section 3 and kept 10 minutes after being warmed up to 700 ℃ of design temperatures, afterwards by radiation thermometer (trade name: the mensuration temperature of putting section 3 thermoviewer).The result is as shown in Table 15.

[table 15]

Test portion No.	The resistance density (R1/S1) of tubular holding components inboard	The resistance density (R2/S2) in the tubular holding components outside	(R1/S1)/ (R2/S2)	Temperature difference in the face of 700 ℃ wafer surface (℃)
Test portion No.			(R1/S1)/ (R2/S2)		441	0.019	0.015	1.27	3
442	0.015	0.015	1.00	6	441	0.019	0.015	1.27	3

If the area of the inboard of the tubular holding components 418 that engages with tabular ceramic body is S1, the resistance value of the area inside of this tubular holding components 8 is R1, the area in these tubular holding components 408 outsides is S2, the resistance value in the zone in these tubular holding components 418 outsides is R2, the mean temperature of putting the wafer of being placed in the section 3 of the test portion No.441 that the resistance density (R1/S1) of above-mentioned tubular holding components inboard is bigger than the resistance density (R2/S2) in this tubular holding components outside is 700 ℃, maximum temperature is 702 ℃, lowest part is 699 ℃, can allow temperature difference is in 3 ℃ in the face of wafer, thereby temperature fluctuation can be controlled to be 700 ℃ of relative determination temperature is in 0.5%, obtains outstanding thermal uniformity.

In addition, the test portion No.442 of usefulness relatively, the shape of heating figure is identical with Figure 15 A, except the resistance heater that will not carry out the resistance adjustment is embedded in the ceramic body, and equal ceramic heaters by the work that method is manufactured experimently identical with embodiment, load the alternating voltage of 200V, allows and put section heating, but the maximum temperature of putting section 3 is 703 ℃ that lowest part is low to moderate 697 ℃, relatively the temperature fluctuation of 700 ℃ of design temperatures is 1%, and some is big slightly for Temperature Distribution.

[embodiment 16]

Among the embodiment 16, produce in the ceramic heater 400 in embodiment 15, be arranged in resistance value density (R1/S1), each ceramic heater that has nothing in common with each other with the resistance value density (R2/S2) that is arranged in than the per unit area of the resistance heater 405b of tubular holding components 418 regional Q2 in the outer part than the per unit area of the resistance heater 405a of tubular holding components 8 regional Q1 in the inner part.Afterwards, the same with embodiment 14, temperature difference in the face of the wafer surface when measuring 500 ℃ of transition when being heated to 600 ℃.

Afterwards, be heated to 700 ℃ with 20 ℃/minute speed from room temperature, keep cooling off afterwards in 10 minutes, repeatedly this temperature cycles, whether produce gas leakage in the tabular ceramic body 402 of affirmation heater 400 at this moment and the composition surface between the tubular holding components 8, estimate the durability of heater 400.

In addition, having or not of gas leakage confirmed once every 10 temperature cycles.In addition, having or not of the gas leakage on composition surface at room temperature uses the helium leak tester to carry out.The result is shown in table 16.

[table 16]

Test portion No.	The resistance density (R1/S1) of tubular holding components inboard	The resistance density (R2/S2) in the tubular holding components outside	(R1/S1) /(R2/S2)	In the junction surface, produce the times of thermal cycle that leaks gas	The temperature difference of wafer surface during 500 ℃ transition (℃)
Test portion No.			(R1/S1) /(R2/S2)			451	0.015	0.015	1.00	1160 times	31
452	0.0157	0.015	1.05	2010 times	19	451	0.015	0.015	1.00	1160 times	31
452	0.0157	0.015	1.05	2010 times	19	453	0.017	0.015	1.13	More than 2500 times	12
454	0.019	0.015	1.27	More than 2500 times	11	453	0.017	0.015	1.13	More than 2500 times	12
454	0.019	0.015	1.27	More than 2500 times	11	455	0.021	0.015	1.40	More than 2500 times	12
456	0.0225	0.015	1.50	2160 times	17	455	0.021	0.015	1.40	More than 2500 times	12

The result is, can think by allowing the resistance value density (R1/S1) be 1.05～1.5 times than resistance value density (R2/S2), can reduce to produce the possibility to the gas leakage of temperature cycles, improves durability.Particularly, if allow the resistance value density (R1/S1) be more than 1.13 times, below 1.4 times,, demonstrate outstanding characteristic just can will bring up to more than 2500 times to the durability of temperature cycles than resistance value density (R2/S2).

In addition, temperature difference is test portion No.452～456 below 20 ℃ in the face of putting section during 500 ℃ transition, and up to more than 2000 times, and temperature difference is less in the face of putting section during the intensification transition to the durability of temperature cycles, can learn that its thermal stress is less, outstanding to the durability of thermal cycle.

Claims

1. heater, it comprises:

Described heater is characterised in that,

2. heater, it comprises:

Tabular ceramic body, described tabular ceramic body has side's interarea and the opposing party's interarea, one side master and be the section of putting of placing heating object, its inside or the opposing party's interarea have resistance heater, described resistance heater is made up of the continuous band-shaped body that the circular arc band on two circumference in the concentric circles that is arranged on different radii is connected at least;

Described heater is characterised in that,

3. heater as claimed in claim 2 is characterized in that:

Described resistance heater comprises at least two circular arc bands on the adjacent circumference week that is arranged in described circumference, be positioned at least one circular arc band on the opposing party's circumference, will be positioned at that circular arc band on the described circumference week is connected respectively with circular arc band on being positioned at described the opposing party's circumference and adjacent setting be connected the circular arc band, connection spacing between the connection circular arc band of described adjacent setting is less than the circular arc spacing between the circular arc band that is connected by this connection circular arc band.

4. as claim 1 or 3 described heaters, it is characterized in that:

Described connection spacing is set in 30%～80% the scope of described circular arc spacing.

5. heater as claimed in claim 1 is characterized in that:

Have a plurality of described resistance heaters, described each resistance heater is separately positioned in the annulus resistance heating body region, this annulus resistance heating body region, connect the inscribed circle of the most inboard circular arc band of the circular arc band that is arranged in each resistance heater in being defined in, and external zone between the circumscribed circle of outermost circular arc band.

6. as claim 2 or 5 described heaters, it is characterized in that:

A plurality of described annulus resistance heating body region are provided with one heart, are respectively equipped with described resistance heater in each annulus resistance heating body region.

7. heater as claimed in claim 6 is characterized in that:

Described a plurality of annulus resistance heating body region, constitute by the 1st annulus resistance heating body region set in turn, the 2nd annulus resistance heating body region and the 3rd annulus resistance heating body region from the inboard, the inboard of described the 1st annulus resistance heating body region further has the central resistance heating body region of circle or annulus, further is provided with resistance heater in this central authorities' resistance heating body region.

8. heater as claimed in claim 7 is characterized in that:

The external diameter of described central resistance heating body region (D1) be described the 3rd annulus resistance heating body region external diameter (D) 20～40%, the external diameter (D2) of described the 1st annulus resistance heating body region be described the 3rd annulus resistance heating body region external diameter (D) 40～55%, the external diameter (D3) of described the 2nd annulus resistance heating body region be described the 3rd annulus resistance heating body region external diameter (D) 55～85%.

9. heater as claimed in claim 8 is characterized in that:

The internal diameter (D22) of described the 1st annulus resistance heating body region be described the 3rd annulus resistance heating body region external diameter (D) 34～45%, the internal diameter (D33) of described the 2nd annulus resistance heating body region be described the 3rd annulus resistance heating body region external diameter (D) 55～65%, the internal diameter (D0) of described the 3rd annulus resistance heating body region be described the 3rd annulus resistance heating body region external diameter (D) 85～93%.

10. heater as claimed in claim 7 is characterized in that:

Described the 2nd annulus resistance heating body region and described the 3rd annulus resistance heating body region, wait by a plurality of border region that are arranged on the radiation direction respectively and cut apart, the described borderline region and the described borderline region of cutting apart described the 3rd annulus resistance heating body region of cutting apart described the 2nd annulus resistance heating body region be not to stagger along 1 overlapping mode of radiation direction.

11. heater as claimed in claim 10 is characterized in that:

Described the 2nd annulus resistance heating body region cut apart number, with described the 3rd annulus resistance heating body region to cut apart number different.

12. heater as claimed in claim 7 is characterized in that:

Be arranged on the resistance heater in the described central resistance heating body region, with the resistance heater serial or parallel connection of the 1st annulus resistance heating body region.

13. heater as claimed in claim 7 is characterized in that:

Between described central resistance heating body region and described the 1st annulus resistance heating body region, be provided with the through hole that connects described tabular ceramic body.

14. heater as claimed in claim 6 is characterized in that:

At the width that is arranged in the set resistance heater band of outermost annulus resistance heating body region, less than the width of other set resistance heater bands in the resistance heating body region.

15. heater as claimed in claim 1 or 2 is characterized in that:

Described tabular ceramic body is fixed on the described shell via the stop part.

16. a heater, it comprises:

Described heater is characterised in that,

17. heater as claimed in claim 16 is characterized in that:

Described connection spacing is set in 30%～80% the scope of described coil-span.

18., it is characterized in that as claim 16 or 17 described heaters:

The helix pitch that is positioned at outermost helical coil in the described helical coil is less than the helix pitch of other helical coils.

19., it is characterized in that as claim 16 or 17 described heaters:

Engaging in the opposing party's interarea of described tabular ceramic body has the tubular holding components, is positioned at the helix pitch of described helical coil of the inboard of this holding components, less than the helix pitch of the described helical coil in the outside that is positioned at described holding components.

20. a chip heating device is characterized in that:

The heater that has in the claim 1,2,16 any.

21. the manufacture method of a heater, it is used for making as any described heater of claim 16～19, it is characterized in that, comprising:

22. a wafer processing is characterized in that:

Wafer is placed on the putting on the section of chip heating device of claim 20, when described wafer being heated, carries out 1 during film forming semiconductive thin film, etch processes and resist film form on this wafer at least by described heater.