CN100468421C - 基于集成电路制程性能变化建立模型的方法 - Google Patents
基于集成电路制程性能变化建立模型的方法 Download PDFInfo
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- CN100468421C CN100468421C CNB2006101168575A CN200610116857A CN100468421C CN 100468421 C CN100468421 C CN 100468421C CN B2006101168575 A CNB2006101168575 A CN B2006101168575A CN 200610116857 A CN200610116857 A CN 200610116857A CN 100468421 C CN100468421 C CN 100468421C
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CNB2006101168575A CN100468421C (zh) | 2006-09-30 | 2006-09-30 | 基于集成电路制程性能变化建立模型的方法 |
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CN101154242A CN101154242A (zh) | 2008-04-02 |
CN100468421C true CN100468421C (zh) | 2009-03-11 |
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Families Citing this family (8)
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US8121822B2 (en) * | 2009-04-09 | 2012-02-21 | International Business Machines Corporation | Integrated circuit modeling based on empirical test data |
CN101655882B (zh) * | 2009-07-24 | 2012-10-17 | 上海宏力半导体制造有限公司 | 基于统计模型最差情况的建模方法 |
CN103400045B (zh) * | 2013-08-14 | 2016-08-10 | 上海华力微电子有限公司 | 计算干氧扩散反应参数的方法 |
CN106291401B (zh) * | 2016-10-14 | 2019-07-09 | 北京东方计量测试研究所 | 一种太阳方阵模拟器伏安特性测试方法及测试系统 |
CN109933826B (zh) * | 2017-12-18 | 2023-01-24 | 中国科学院微电子研究所 | 一种工艺波动影响的分析方法及系统 |
CN108717471B (zh) * | 2018-03-22 | 2022-01-04 | 杭州电子科技大学 | 一种电压域振荡量子器件伏安特性的建模方法 |
CN111177993B (zh) * | 2019-12-31 | 2023-12-01 | 无锡市同步电子科技有限公司 | 一种适用于nrz和pam4高速信号分析的ac电容建模方法 |
CN117422005B (zh) * | 2023-12-19 | 2024-03-29 | 杭州四维映射软件有限公司 | 一种模拟电路仿真误差自动控制的方法及应用 |
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Effective date of registration: 20111109 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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