CN100464434C - Deformed silicon thin-film solar battery - Google Patents
Deformed silicon thin-film solar battery Download PDFInfo
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- CN100464434C CN100464434C CNB2006100612592A CN200610061259A CN100464434C CN 100464434 C CN100464434 C CN 100464434C CN B2006100612592 A CNB2006100612592 A CN B2006100612592A CN 200610061259 A CN200610061259 A CN 200610061259A CN 100464434 C CN100464434 C CN 100464434C
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
A special-shaped silicon film solar cell is prepared as using laser to etch off silicon film layer in front electrode layer on transparent conductive film base plate, scaling out leading-out pattern of electrode layer, setting electrode leading out point on back lacquer layer, enabling to drill round hole or square hole at any position in cell operation surface or enabling to make various-shaped transparent window there.
Description
Affiliated field
The invention discloses a kind of silicon film solar batteries of abnormity, be widely used in coming in every shape among all kinds electronic product.Especially non-crystal silicon solar cell and assembly thereof are as power supply or transducer.
Background technology
As everyone knows, thin-film solar cells or title hull cell are on the substrate with preparation technology in low temperature at electro-conductive glass or flexible conducting material, the large scale integration production that material and device can form simultaneously.For solar cell, hull cell is a second generation solar cell, because the raw material source is abundant, pollution-free, energy consumption is low, and production cost is low, is Green Product.At present, hull cell mainly adopts amorphous silicon material, and the amorphous silicon atomic arrangement is disorderly and unsystematic, irregular, between the atom apart from not waiting in the gap, the lattice defect that causes material, make the electron hole translational speed slow, photo-generated carrier is pounced on to be obtained, and conductance is low, conversion efficiency of solar cell is low, and stability remains to be improved.(SOLAR CELLS Chenming andRicheard M.White) discloses AM1 under sunshine, the relation of theoretical maximum conversion efficiency and solar cell material energy gap, energy gap/eV curve at document; Various optical semiconductors absorb energy and photon energy relation and and relevant light absorption hv/eV curve.The present thin-film solar cells of exploitation and can large-scale production is that laminated cell that transfer ratio and stability also has each PN joint comprises homojunction or heterojunction in order to improve.Is that to also have flexible material be the hull cell of substrate in substrate according to market demand divided by glass.And be the amorphous silicon/microcrystalline silicon tandem battery of representative with film microcrystal silicon material, stability is strong, the spectral absorption wide ranges, and transformation efficiency improves.
On the one hand, thin-film solar cells is produced and also had weak point, makes as preceding electrode pattern: adopt chemical etching process, the residue after the chemical etching can pollute substrate, and the accuracy of electrode transparent conducting film figure reduces before making.The etching amorphous silicon film still adopts conventional laser delineation technology, can only delineate straight line and simple character, and the thin-film solar cells profile is single, has limited the scope of application of thin-film solar cells.
Thin film solar cell continuous advancement in technology on the other hand, cost performance of product is reasonable, and the crystal silicon solar energy battery raw material appreciate especially at present, raw material are in short supply " bottleneck " to have occurred, hull cell, cheap material non-crystal silicon solar cell especially, the market demand is ardent.Purposes is more and more, Chinese patent CN2591590 " Integral Only Expose Intensity Indicating Device " is disclosed to be with integrated electro transducer on the same substrate and two independent thin-film solar cells of power supply, wherein a hull cell is made power supply, and another piece is made photoelectric sensor.Detect the sunlight irradiation radiation intensity, exposure time adds up.Major technique breaks through, and conversion efficiency and stability improve, and disclose a kind of low-cost large-scale production amorphous silicon binode lamination solar cell as CN03134829.7.U.S. Pat 5865904 " Flexible photoelectric conversionmodule and method for its manufacture " discloses the flexible optoelectronic assembly, comprises the thin film amorphous silicon solar cell.Amorphous silicon low light level performance is better than monocrystalline silicon, in patent of invention CN1665035A " amorphous silicon solar cell doubling glass assembly ", this physical quantity of specific power energy output proposes, be to say the specific power energy output of the energy output of the energy output of thin film amorphous silicon solar cell year specific power or day specific power greater than monocrystaline silicon solar cell, bigger for applying in the building materials market potentiality.
The innovation and creation content
Say that as above also there is deficiency in existing silicon film solar batteries (following can be called for short hull cell or battery) at the processing and manufacturing technical elements, the product appearance form is too simple, and technology is advanced inadequately.First purpose of the present invention is to employ new technology, the film processed solar cell, can make in the profile of battery and the battery the effectively figure of working face, it is complex-shaped various, can be that circle, annulus, bar shaped, fan-shaped, n-shaped and other are irregularly shaped.
Another purpose is to adopt advanced technology, processing profiled silicon film solar batteries, circular hole or square hole can be beaten in any position in the battery face, also can make the transparent window of different shape, for satisfying the needs of each electronic product, as wrist-watch, speed counter, electronic toy etc., this components and parts of amorphous silicon thin-film solar cell or the silicon film solar batteries device that need non-regular profile and have unique internal structure.
For the task of realizing proposing, technology solution party proposed by the invention is:
Deformed silicon thin-film solar battery is by the profile of battery, effective working face in the battery and the transparent window 6 in the battery constitute, the profile of said battery, it can be circular that transparent in effective working face in the battery and the battery looks 6, arc, n-shaped and other are irregularly shaped, battery is a substrate with transparent conductive film substrate 1 (transparent conducting glass), stacked in regular turn, by preceding electrode layer 7, hull cell layer 8, dorsum electrode layer 9, constitute with back of the body enamelled coating 5, on back of the body enamelled coating 5, electrode leading point 2 is arranged, have a transparent window 6 on the effective working face in said battery at least.Electrode layer 7 is to be made of a plurality of irregular conductive regions before said, and hull cell layer 8 is made of a plurality of arcs or special-shaped conductive region corresponding to preceding electrode layer 7, and dorsum electrode layer 9 is to be made of a plurality of special-shaped conductive region corresponding to hull cell layer 8.The profile of said silicon film solar batteries is meant the external shape and the size of battery, the silicon film solar batteries of the abnormity that is processed by high-precision program control special-shaped glass cutting machine or ultrasonic wave glass cutting machine.Effective working face in the said battery, can be circle, arc, n-shaped and other irregularly shaped formation, adopting high-precision high-speed drilling machine or high-precision ultrasonic glass cutting machine in battery operated, to punch, be made into different transparent window 6.Said silicon thin-film battery can be a non-crystal silicon solar cell.
In order to make a kind of deformed silicon thin-film solar battery, the technology of employing is:
Preceding electrode layer 7 figures: with electro-conductive glass ITO or SnO
2Be substrate, adopt laser index carving conducting film to be etched into the independent fritter of definite shape and size;
Laser grooving and scribing silicon membrane layer 8: carve the silicon membrane layer 8 that removes relevant position in preceding electrode layer 7 graphics fields with laser, electrode layer 7 was drawn figure before marking went out;
Transparent window 6: with laser index carving silicon membrane layer 8 and coating, make non-penetrative transparent window zone at inside battery;
Cutting gradation: adopt the high-precision program control glass cutting machine, hull cell is cut into the rectangle small pieces along line of cut 4;
Sharp processing: adopt high-precision program control special-shaped glass cutting machine or ultrasonic wave glass cutting machine, become special-shaped battery by cell shapes and size cutting outside;
Punching: in battery operated, can punch, be made into different penetrability transparent window, the circular hole that employing high-precision high-speed drilling machine making diameter is little (Φ＜3mm); Adopt the high-precision ultrasonic glass cutting machine to make the hole of the bigger circular hole of diameter and other shapes.
The good effect that the invention produces adopts advanced Laser mark technology, the high-precision deformed silicon thin-film solar battery that depicts complex figure and internal structure.Circular hole or square hole can be beaten in any position in battery operated, also can make the transparent window of different shape.Improved the accuracy of preceding electrode transparent conducting film figure, reduced the pollution of production process environment.Simultaneously, preceding electrode material is widened and is ITO, SnO
2, improved the combination property of special-shaped amorphous silicon thin-film solar cell
Description of drawings
Fig. 1, be back appearance figure schematic diagram of the present invention.
Fig. 2, the battery structure schematic diagram of seeing by Figure 1A-A section of the present invention.
Fig. 3, be electrode 7 floor map before the present invention.
Fig. 4, be silicon membrane layer 8 floor map of the present invention.
Fig. 5, be back electrode 9 floor map of the present invention.
Fig. 6, be the floor map that the present invention carries on the back enamelled coating 5.
Fig. 7: the floor map that is extraction electrode point 2 of the present invention
Show silicon film solar batteries structure of the present invention from Fig. 1-7,1 transparent conductive film substrate or title substrate, substrate, 2 extraction electrodes point is the positive and negative electrode leading point, 3 characters, 4 lines of cut, 5 back of the body enamelled coatings, 6 transparent windows, electrode layer before 7,8 hull cell layers (amorphous silicon), 9 dorsum electrode layers.
Concrete implementation content
Example 1: the production profile is the annular solar cell (as Fig. 1, Fig. 2) that has circular transparent window in the middle of the octagon
Step is as follows:
1, preceding electrode layer 7 graphic makings: with ITO or SnO
2Transparent conducting film glass is a substrate, adopts Laser mark technology, and the continuous conduction film on the substrate is etched into the independent fritter that requires shape and size, the dash area shown among Fig. 37, promptly preceding electrode pattern.Equipment adopts large format infrared light laser index carving system, and optical maser wavelength is 1064nm, and laser power is 30～100 watts, and the laser acousto-optic frequency is 3～25KHz, and insulation shielding wire width is 0.1～0.4mm between preceding electrode adjacent pattern, and insulation resistance is greater than 2M Ω;
2, deposited amorphous silicon layer 8: the substrate of electrode pattern is after the ultrasonic cleaning oven dry before will carving, pack into and plate the special fixture of amorphous silicon film, push the preheating oven preheating, the baking oven preheat temperature is 200-240 ℃, reach technological temperature constant temperature after 1～2 hour, anchor clamps are taken out in preheating oven, push amorphous silicon deposition system response vacuum chamber, adopt the method for PCVD (PECVD), on substrate, deposit P type amorphous silicon doped layer successively, I intrinsic amorphous silicon layer and N type amorphous silicon doped layer are produced the core-amorphous silicon photoelectric conversion layer of battery;
3, the laser grooving and scribing amorphous silicon layer 8: adopt Laser mark technology, depositing on the substrate glass substrate of amorphous silicon, relevant position in preceding electrode 7 graphics fields, carve except that amorphous silicon layer 8 by the designing requirement figure, electrode 7 is drawn figure before exposing, shielding wire between the adjacent shade segment shown among Fig. 48, carving figure and the preceding electrode pattern shielding wire edge spacing of removing amorphous silicon is 0.1～0.3mm.Equipment adopts large format green laser index carving system, and optical maser wavelength is 532nm, and laser power is 15～30 watts, and the laser acousto-optic frequency is 1～15KHz;
4, back electrode is made: adopt screen printing technique, on the silk-screen of amorphous silicon layer surface, starch electrocondution slurry back electrode figure by the carbon of designing requirement, and the dash area shown among Fig. 59, and push oven for drying.150～250 purpose polyester silk screens are adopted in silk screen printing, and the carbon slurry adopts the gloomy 581SS model of Ai Qi carbon slurry, and curing temperature is 140～160 ℃, and constant temperature time is 0.5-1 hour;
5, back of the body lacquer protective layer is made: adopt screen printing technique, and the resin printing ink protective layer of insulation on silk-screen on the substrate of making back electrode, moisture-proof, acid and alkali-resistance, the dash area shown among Fig. 65, and push oven for drying.150～300 purpose polyester silk screens are adopted in silk screen printing, and back of the body lacquer adopts Nazidl14 back of the body lacquer, and curing temperature is 100～140 ℃, and constant temperature time is 10-40 minute;
6, character is made: adopt screen printing technique, carry on the back the relevant position of extraction electrode on the substrate of enamelled coating well at silk-screen, and house mark, battery size and positive and negative electrode sign on the silk-screen, the character shown among Fig. 13, and light solidifies admittedly.200～300 purpose polyester silk screens are adopted in silk screen printing, and legend ink adopts the solid printing ink of ultraviolet, adopt the solid machine of ultraviolet to solidify, and the solid machine uviol lamp power of light is 3KW, and the solid temperature of light is 60～80 ℃, and the solid machine transfer rate of light is 3-10m/ minute;
But 7 welding electrodes are made: adopt screen printing technique, carry on the back the relevant position of extraction electrode on the substrate of enamelled coating 5 well at silk-screen, can weld electrocondution slurry on the silk-screen--the copper slurry, and the dash area shown among Fig. 12, and push oven for drying.100～200 purpose polyester silk screens are adopted in silk screen printing, and the copper slurry adopts Mitsui S-5000 model copper slurry, and curing temperature is 130～160 ℃, and constant temperature time is 0.5-1 hour;
8, transparent window is made: adopt Laser mark technology, the brown amorphous silicon layer that need make the transparent window zone to inside battery by design removes quarter, produces transparent window, the white portion shown among Fig. 16.Equipment adopts large format infrared light laser index carving system, and optical maser wavelength is 1064nm, and laser power is 30～100 watts, and the laser acousto-optic frequency is 3～25KHz;
9, cutting gradation: adopt the high-precision program control glass cutting machine,, the finished product battery on the substrate is cut into the rectangle small pieces, as the rectangle housing among Fig. 1 by design composing array pitch;
10, sharp processing: adopt high-precision program control special-shaped glass cutting machine, cut out the battery profile by the battery request shape and size, octagon as shown in fig. 1.
So far, profile is that the annular amorphous silicon thin-film solar cell that has circular transparent window in the middle of the octagon completes.Electrical property, outward appearance detect warehousing after passing.
Claims (8)
1. deformed silicon thin-film solar battery, it is characterized in that said silicon film solar batteries is a non-crystal silicon solar cell, with transparent conductive film substrate (1) is substrate, stacked in regular turn, by preceding electrode layer (7), amorphous silicon membrane battery layers (8), dorsum electrode layer (9) and back of the body enamelled coating (5) constitute, on back of the body enamelled coating (5), electrode leading point (2) is arranged, said silicon film solar batteries comprises the profile of battery, effective working face in the battery and the transparent window (6) that in the effective working face of battery, forms, the shape of this silicon film solar batteries comprises circle, n-shaped and irregularly shaped.
2. according to the described a kind of deformed silicon thin-film solar battery of claim 1, it is characterized in that having a transparent window (6) at least in the effective working face in the said silicon film solar batteries.
3. according to the described a kind of deformed silicon thin-film solar battery of claim 1, it is characterized in that said before electrode layer (7) be by laser transparent conductive film substrate (1) go up abnormity that continuous etching marks independently the fritter figure constituted, nesa coating can be ITO or SnO
2
4. the manufacture craft of a deformed silicon thin-film solar battery, said silicon film solar batteries is a non-crystal silicon solar cell, with transparent conductive film substrate (1) is substrate, stacked in regular turn, by preceding electrode layer (7), amorphous silicon membrane battery layers (8), dorsum electrode layer (9), constitute with back of the body enamelled coating (5), on back of the body enamelled coating (5), electrode leading point (2) is arranged, it is characterized in that said silicon film solar batteries comprises the profile of battery, effective working face in the battery and the transparent window (6) that in the effective working face of battery, forms, the shape of this silicon film solar batteries comprises circle, n-shaped and irregularly shaped, it makes the production technology that adopts:
Preceding electrode layer (7) figure: on transparent conductive film substrate (1), adopt laser index carving conducting film to be etched into the independent fritter of definite shape and size;
Laser grooving and scribing amorphous silicon membrane battery layers (8): carve the amorphous silicon membrane battery layers (8) of removing relevant position in preceding electrode layer (7) graphics field with laser, marking goes out the figure of drawing of preceding electrode layer (7);
Transparent window (6): with laser index carving amorphous silicon membrane battery layers (8) and dorsum electrode layer (9) and back of the body enamelled coating (5), make non-penetrative transparent window zone at inside battery.
5. the manufacture craft of a kind of deformed silicon thin-film solar battery according to claim 4, the profile that it is characterized in that said battery is cut gradation by external process: adopt the high-precision program control glass cutting machine, prolong line of cut (4) hull cell is cut into the rectangle small pieces;
After carry out sharp processing: adopt high-precision program control special-shaped glass cutting machine or ultrasonic wave glass cutting machine, cut into deformed silicon thin-film solar battery by cell shapes and size;
Punching: punching in battery operated, be made into different penetrability transparent window, adopt the high-precision high-speed drilling machine to make the circular hole of diameter less than 3mm.
6. the manufacture craft of a kind of deformed silicon thin-film solar battery according to claim 4 is characterized in that said preceding electrode layer (7) graphic making: be on the substrate of substrate (1) with the transparent conducting film glass, adopting continuous etching ITO of laser or SnO
2Conducting film is made the preceding electrode pattern of the independent fritter of definite shape and size, and the power of the large format infrared light laser marking machine of employing is 30～100 watts, and the laser acousto-optic frequency is 3～25KHz.
7. the manufacture craft of a kind of deformed silicon thin-film solar battery according to claim 4, it is characterized in that said transparent window (6) making: adopt laser index carving that the brown amorphous silicon layer of inside battery is carved and remove, produce the transparent window zone, equipment adopts large format infrared light laser index carving system, power is 30～100 watts, and the laser acousto-optic frequency is 3～25KHz.
8. the manufacture craft of a kind of deformed silicon thin-film solar battery according to claim 4 is characterized in that the sharp processing of said battery comprises:
Cutting gradation: adopt the high-precision program control glass cutting machine,, the finished product battery on the substrate is prolonged line of cut (4) cut into the rectangle small pieces by design composing array pitch;
Sharp processing: adopt high-precision program control special-shaped glass cutting machine, cut out the battery profile by the battery request shape and size.
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| CNB2006100612592A CN100464434C (en) | 2006-06-23 | 2006-06-23 | Deformed silicon thin-film solar battery |
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| CNB2006100612592A CN100464434C (en) | 2006-06-23 | 2006-06-23 | Deformed silicon thin-film solar battery |
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| CN100464434C true CN100464434C (en) | 2009-02-25 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100590894C (en) * | 2006-12-31 | 2010-02-17 | 李毅 | Method and apparatus for big width laser marking solar cell |
| CN100536149C (en) * | 2007-12-18 | 2009-09-02 | 李毅 | Silicon thin-film solar cell and manufacturing method therefor |
| CN102903791B (en) * | 2012-09-21 | 2015-03-04 | 深圳先进技术研究院 | Manufacturing method and system of thin-film solar cells |
| CN104752555B (en) * | 2013-12-30 | 2017-04-12 | 龙焱能源科技（杭州）有限公司 | Making method for abnormal film photovoltaic module |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1034617C (en) * | 1995-05-19 | 1997-04-16 | 李毅 | Internal-connection amorphous silicon solar cell and manufacture method |
| JP2001094127A (en) * | 1999-09-20 | 2001-04-06 | Shin Etsu Chem Co Ltd | Substrate for solar cell, the solar cell, solar cell module and method for production thereof |
| CN2574223Y (en) * | 2002-08-30 | 2003-09-17 | 张云峰 | Single-post overhead solar battery installation structure |
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2006
- 2006-06-23 CN CNB2006100612592A patent/CN100464434C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1034617C (en) * | 1995-05-19 | 1997-04-16 | 李毅 | Internal-connection amorphous silicon solar cell and manufacture method |
| JP2001094127A (en) * | 1999-09-20 | 2001-04-06 | Shin Etsu Chem Co Ltd | Substrate for solar cell, the solar cell, solar cell module and method for production thereof |
| CN2574223Y (en) * | 2002-08-30 | 2003-09-17 | 张云峰 | Single-post overhead solar battery installation structure |
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Assignee: Chuangyi Science and Technology Development Co., Ltd., Shenzhen City Assignor: Li Yi Contract fulfillment period: 2008.10.4 to 2009.10.4 contract change Contract record no.: 2008440000460 Denomination of invention: Deformed silicon thin-film solar battery Granted publication date: 20090225 License type: exclusive license Record date: 2008.12.8 |
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Application publication date: 20061129 Assignee: Chuangyi Science and Technology Development Co., Ltd., Shenzhen City Assignor: Li Yi Contract record no.: 2010440020002 Denomination of invention: Deformed silicon thin-film solar battery Granted publication date: 20090225 License type: Exclusive License Record date: 20100317 |