CN100464399C - Lug process and wafer structure of protective detection welding pad - Google Patents
Lug process and wafer structure of protective detection welding pad Download PDFInfo
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- CN100464399C CN100464399C CNB200610073723XA CN200610073723A CN100464399C CN 100464399 C CN100464399 C CN 100464399C CN B200610073723X A CNB200610073723X A CN B200610073723XA CN 200610073723 A CN200610073723 A CN 200610073723A CN 100464399 C CN100464399 C CN 100464399C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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Abstract
The procedure for preparing bulge includes steps: forming a under bulge metal (UBM) or a photoresistive layer on testing weld pad on wafer; then, forming some bulges on the weld pad. Thus, the testing weld pad is protected in etching step of the procedure for preparing bulge so as to prevent the testing weld pad from etched out.
Description
[technical field]
The present invention is about a kind of lug manufacturing process, and is especially about a kind of lug manufacturing process that can protect detection welding pad, etched in lug manufacturing process to prevent this detection welding pad.
[background technology]
Shown in figure 1a to Fig. 1 c, it has shown the structural representation of wafer in the prior art.With reference to figure 1a, this wafer 10 has an active surface 11, has a protective layer 12, several convex pads (bump pad) 13 and several detection welding pads (test pad) 14 on this active surface 11.This protective layer 12 exposes those convex pads 13 and those detection welding pads 14.Those convex pads 13 be used in the successive process to form a projection lower metal layer (Under Bump Metallurgy, UBM) 15 and several projections (bump) 16 thereon.Those detection welding pads 14 are used to be made for behind the lug manufacturing process usefulness of test.
Yet, in existing lug manufacturing process, because the top of those detection welding pads 14 is not covered by the protective layer, projection lower metal layer and projection; therefore; in etching step (etching process), those detection welding pads 14 can be directly exposed in the etching solution and be etched away together, shown in Fig. 1 b.After those detection welding pads 14 were etched, the protective layer 12 that originally was positioned at those both sides, detection welding pad 14 top can become two unsettled overhang A, B.Afterwards, at this wafer 10 of the cleaning that continues or cut in the step of this wafer 10, the active surface 11 of this wafer 10 can bear a pressure.In this process, because the below of overhang A, B there is no any support, therefore can crumble and come off, shown in Fig. 1 c from original position.Overhang A, the B that those come off can be floating along with wafer 10, and then be attached on the projection 16 or the active surface 11 of wafer 10, thereby cause the pollution to wafer 10.
Therefore, be necessary to provide the lug manufacturing process of a kind of innovation and tool progressive, have problems to solve in the above-mentioned prior art.
[summary of the invention]
Main purpose of the present invention is to provide a kind of lug manufacturing process, and it is by forming a projection lower metal layer or a photoresist layer, with the not etched purpose of protection detection welding pad in the etching step that is implemented in lug manufacturing process on the detection welding pad on the wafer.
The objective of the invention is to be achieved by the following scheme:
(a) provide a wafer, this wafer has an active surface, has a protective layer, several convex pads and several detection welding pads on this active surface, and this protective layer exposes those convex pads and those detection welding pads;
(b) form a projection lower metal layer on the active surface of wafer, it covers this protective layer and those convex pads and those detection welding pads;
(c) form several first photoresist layers on the projection lower metal layer, the position of those first photoresist layers is corresponding to those detection welding pads;
(d) on first photoresist layer and projection lower metal layer, form one second photoresist layer;
(e) form several openings on second photoresist layer, the position of those openings is corresponding to those convex pads;
(f) insert several welding blocks to those openings;
(g) remove this second photoresist layer;
(h) partly remove the projection lower metal layer, expose protective layer;
(i) remove first photoresist layer; And
(j) carry out a back welding process, it is spherical that those welding blocks are formed.
[description of drawings]
Fig. 1 a to Fig. 1 c shows the structural representation of existing wafer;
Fig. 2 a to Fig. 2 i shows the schematic diagram of lug manufacturing process in the first embodiment of the invention;
Fig. 3 a to Fig. 3 j shows the schematic diagram of lug manufacturing process in the second embodiment of the invention; And
Fig. 4 a to Fig. 4 i shows the schematic diagram of lug manufacturing process in the third embodiment of the invention.
[embodiment]
With reference to figure 2a to Fig. 2 i, its demonstration be crystal circle structure schematic diagram according to different phase in the lug manufacturing process of first embodiment of the invention.This lug manufacturing process may further comprise the steps.At first, with reference to figure 2a, provide a wafer 20, this wafer 20 has an active surface 21, has a protective layer 22, several convex pads 23 and several detection welding pads 24 on this active surface 21.This protective layer 22 exposes those convex pads 23 and those detection welding pads 24.Those convex pads 23 are in order to form several projections thereon in successive process.Those detection welding pads 24 are used to be made for behind the lug manufacturing process usefulness of test.
Then, with reference to figure 2b, on the active surface 21 of wafer 20 with sputter, evaporation or alternate manner form a projection lower metal layer (Under Bump Metallurgy, UBM) 25, cover this protective layer 22 and those convex pads 23 and those detection welding pads 24.In the present embodiment, this projection lower metal layer 25 comprises an adhesion layer (adhesion layer) 251, one barrier layer (barrier layer) 252 and one binder course (wettablelayer) 253.If wherein the material of this detection welding pad 24 is an aluminium, then the material of this adhesion layer 251 is an aluminium, and the material of this barrier layer 252 is a nickel-vanadium alloy, and the material of this binder course 253 is a copper.If the material of this detection welding pad 24 is a copper, then the material of this adhesion layer 251 is a titanium, and the material of this barrier layer 252 is a nickel-vanadium alloy, and the material of this binder course 253 is a copper.
Then; with reference to figure 2c; utilize existing photoresistance (photoresist applying), patterning (patterning) and the modes such as (developing) of development of going up on this projection lower metal layer 25, to form several first photoresist layers 26; wherein the position of those first photoresist layers 26 corresponds respectively to those detection welding pad 24 positions, and it is in order to protect the projection lower metal layer 25 on those detection welding pads 24.In other words, those first photoresist layers 26 only be positioned at those detection welding pads 24 directly over, and convex pads 23 tops there is no any first photoresist layer 26.
Then, with reference to figure 2d, on this first photoresist layer 26 and this projection lower metal layer 25, form one second photoresist layer 27.This second photoresist layer 27 is in order to form projection, and is different with the protective effect of above-mentioned first photoresist layer 26, so the thickness of this second photoresist layer 27 is greater than first photoresist layer 26.Afterwards, form several openings 271 on this second photoresist layer 27, the position of those openings 271 is corresponding to those convex pads 23 positions.In other words, those openings 271 be positioned at those convex pads 23 directly over.
Then,, carry out a metal procedure, insert several welding blocks 28 to those openings 271 with reference to figure 2e.
Then, with reference to figure 2f, remove this second photoresist layer 27.
Then,, partly remove this projection lower metal layer 25, expose this protective layer 22 with reference to figure 2g.In the present embodiment, be that the projection lower metal layer 25 that utilizes etched mode will be not covered by first photoresist layer 26 and welding block 28 removes.The projection lower metal layer that is positioned on those convex pads 23 is defined as the first projection lower metal layer 25a, and the projection lower metal layer that is positioned on those detection welding pads 24 is defined as the second projection lower metal layer 25b.This first projection lower metal layer 25a comprises an adhesion layer 251a, a barrier layer 252a and a binder course 253a.This second projection lower metal layer 25b comprises an adhesion layer 251b, a barrier layer 252b and a binder course 253b.
Then,, remove this first photoresist layer 26, to expose this second projection lower metal layer 25b with reference to figure 2h.
At last,, carry out a back welding process, make those welding blocks 28 form spherical projection 29, and finish lug manufacturing process with reference to figure 2i.
In the present embodiment, owing to those detection welding pads 24 are protected by first photoresist layer 26 and the second projection lower metal layer 25b in whole lug manufacturing process, therefore can be not etched.
With reference to figure 2i, it is a crystal circle structure schematic diagram of the present invention.This crystal circle structure 30 comprises: a wafer 20, one first projection lower metal layer 25a, one second projection lower metal layer 25b and several projections 29.This wafer 20 has an active surface 21, has a protective layer 22, several convex pads 23 and several detection welding pads 24 on this active surface 21, and this protective layer 22 does not cover those convex pads 23 and those detection welding pads 24.This first projection lower metal layer 25a is positioned on those convex pads 23.This second projection lower metal layer 25b is positioned on those detection welding pads 24.Those projections 29 are positioned on those first projection lower metal layers 25a.
In the present embodiment, this first projection lower metal layer 25a comprises an adhesion layer 251a, a barrier layer 252a and a binder course 253a.This second projection lower metal layer 25b comprises an adhesion layer 251b, a barrier layer 252b and a binder course 253b.
With reference to figure 3a to Fig. 3 j, its demonstration be crystal circle structure schematic diagram according to different phase in the lug manufacturing process of second embodiment of the invention.This lug manufacturing process may further comprise the steps.At first, with reference to figure 3a, provide a wafer 40, this wafer 40 has an active surface 41, has a protective layer 42, several convex pads 43 and several detection welding pads 44 on this active surface 41.This protective layer 42 exposes those convex pads 43 and those detection welding pads 44.Those convex pads 43 are used to form several projections thereon in the successive process.Those detection welding pads 44 are used to be made for behind the lug manufacturing process usefulness of test.
Then,, on the active surface 41 of this wafer 40, form a projection lower metal layer 45, cover this protective layer 42 and those convex pads 43 and those detection welding pads 44 with sputter, evaporation or alternate manner with reference to figure 3b.In the present embodiment, this projection lower metal layer 45 comprises an adhesion layer 451, a barrier layer 452 and a binder course 453.If wherein the material of this detection welding pad 44 is an aluminium, then the material of this adhesion layer 451 is an aluminium, and the material of this barrier layer 452 is a nickel-vanadium alloy, and the material of this binder course 453 is a copper.If the material of this detection welding pad 44 is a copper, then the material of this adhesion layer 451 is a titanium, and the material of this barrier layer 452 is a nickel-vanadium alloy, and the material of this binder course 453 is a copper.
Then, with reference to figure 3c, utilize the existing modes such as photoresistance, patterning and development that go up on this projection lower metal layer 45, to form several first photoresist layers 46, wherein the position of those first photoresist layers 46 is corresponding to those convex pads 43 and those detection welding pads 44, in other words, those convex pads 43 and those detection welding pads 44 directly over all have those first photoresist layers 46.
Then, with reference to figure 3d, partly remove this barrier layer 452 and this binder course 453 of this projection lower metal layer 45, to expose this adhesion layer 451.In the present embodiment, be to utilize this barrier layer 452 and this binder course 453 of the projection lower metal layer 45 that etched mode will be not do not covered by those first photoresist layers 46 to remove.The projection lower metal layer 45 that is positioned on those convex pads 43 is defined as a barrier layer 452a and a binder course 453a.The projection lower metal layer 45 that is positioned on those detection welding pads 44 is defined as a barrier layer 452b and a binder course 453b.
Then, with reference to figure 3e, remove those first photoresist layers 46.
Then, with reference to figure 3f, on this binder course 453a, 453b and this adhesion layer 451, form one second photoresist layer 47.Afterwards, form several openings 471 on this second photoresist layer 47, the position of those openings 471 is corresponding to those convex pads 43, that is those openings 471 be positioned at those convex pads 43 directly over.
Then,, carry out a metal procedure, insert several welding blocks 48 to those openings 471 with reference to figure 3g.
Then, with reference to figure 3h, remove this second photoresist layer 47.
Then,, partly remove this adhesion layer 451 of this projection lower metal layer 45, expose this protective layer 42 with reference to figure 3i.In the present embodiment, be that this adhesion layer 451 that utilizes etched mode will be not covered by those binder courses 453a and those binder courses 453b removes.The projection lower metal layer that is positioned on those convex pads 43 is defined as the first projection lower metal layer 45a, and the projection lower metal layer that is positioned on those detection welding pads 44 is defined as the second projection lower metal layer 45b.This first projection lower metal layer 45a comprises an adhesion layer 451a, this barrier layer 452a and this binder course 453a.This second projection lower metal layer 45b comprises an adhesion layer 451b, this barrier layer 452b and this binder course 453b.
At last,, carry out a back welding process, make those welding blocks 48 form spherical projection 49, and finish lug manufacturing process with reference to figure 3j.The formed crystal circle structure of the formed crystal circle structure 50 of present embodiment and first embodiment 30 is identical.
With reference to figure 4a to Fig. 4 i, its demonstration be crystal circle structure schematic diagram according to different phase in the lug manufacturing process of third embodiment of the invention.This lug manufacturing process may further comprise the steps.At first, with reference to figure 4a, provide a wafer 60, this wafer 60 has an active surface 61, has a protective layer 62, several convex pads 63 and several detection welding pads 64 on this active surface 61.This protective layer 62 exposes those convex pads 63 and those detection welding pads 64.Those convex pads 63 are used to form several projections thereon in the successive process.Those detection welding pads 64 are used to be made for behind the lug manufacturing process usefulness of test.
Then,, on the active surface 61 of this wafer 60, form a projection lower metal layer 65, cover this protective layer 62 and those convex pads 63 and those detection welding pads 64 with sputter, evaporation or alternate manner with reference to figure 4b.In the present embodiment, this projection lower metal layer 65 comprises an adhesion layer 651, a barrier layer 652 and a binder course 653.If wherein the material of this detection welding pad 64 is an aluminium, then the material of this adhesion layer 651 is an aluminium, and the material of this barrier layer 652 is a nickel-vanadium alloy, and the material of this binder course 653 is a copper.If the material of this detection welding pad 64 is a copper, then the material of this adhesion layer 651 is a titanium, and the material of this barrier layer 652 is a nickel-vanadium alloy, and the material of this binder course 653 is a copper.
Then, with reference to figure 4c, utilize the existing modes such as photoresistance, patterning and development that go up on this projection lower metal layer 65, to form several first photoresist layers 66, wherein the position of those first photoresist layers 66 is corresponding to those convex pads 63 and those detection welding pads 64, in other words, those convex pads 63 and those detection welding pads 64 directly over all have those first photoresist layers 66.
Then, with reference to figure 4d, partly remove this projection lower metal layer 65, to expose this protective layer 62.In the present embodiment, be that the projection lower metal layer 65 that utilizes etched mode not covered by those first photoresist layers 66 removes.The projection lower metal layer that is positioned on those convex pads 63 is defined as the first projection lower metal layer 65a, and the projection lower metal layer that is positioned on those detection welding pads 64 is defined as the second projection lower metal layer 65b.This first projection lower metal layer 65a comprises an adhesion layer 651a, a barrier layer 652a and a binder course 653a.This second projection lower metal layer 65b comprises an adhesion layer 651b, a barrier layer 652b and a binder course 653b.
Then, with reference to figure 4e, remove those first photoresist layers 66.
Then, with reference to figure 4f, form a clathrum 67 on this projection lower metal layer 65 and this protective layer 62, have several openings 671 on this clathrum 67, the position of those openings 671 is corresponding to those convex pads 63.Be noted that this clathrum 67 can be the metal foil (stencil) of one second photoresist layer or a printing usefulness.
Then,, carry out a metal procedure, insert metal 68 to those openings 671 with reference to figure 4g.In the present embodiment, this metal 68 utilizes mode of printing to insert in those openings 671.
Then,, carry out a back welding process, make this metal 68 form spherical projection 69 with reference to figure 4h.
At last, with reference to figure 4i, remove this clathrum 67, and finish lug manufacturing process.The formed crystal circle structure of the formed crystal circle structure 70 of present embodiment and first embodiment 30 is identical.
Though the present invention discloses as above with aforesaid embodiment, it only is explanation principle of the present invention and effect, but not in order to restriction the present invention.Without departing from the spirit and scope of the present invention, those of ordinary skill in the art can carry out various changes to the present invention.If modification of the present invention is belonged within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes interior.
Claims (10)
1. lug manufacturing process of protecting detection welding pad, comprise that step (a) provides a wafer, this wafer has an active surface, has a protective layer, several convex pads and several detection welding pads on this active surface, and this protective layer exposes those convex pads and those detection welding pads; It is characterized in that: this processing procedure also comprises the steps:
(b) (Under Bump Metallurgy UBM), covers this protective layer and those convex pads and those detection welding pads to form a projection lower metal layer on the active surface of this wafer;
(c) form several first photoresist layers on this projection lower metal layer, the position of those first photoresist layers is corresponding to those detection welding pads;
(d) on this first photoresist layer and this projection lower metal layer, form one second photoresist layer;
(e) form several openings on this second photoresist layer, the position of those openings is corresponding to those convex pads;
(f) insert several welding blocks to those openings;
(g) remove this second photoresist layer;
(h) this projection lower metal layer that will do not covered by this first photoresist layer and those welding blocks removes, and exposes this protective layer;
(i) remove those first photoresist layers; And
(j) carry out a back welding process, it is spherical that those welding blocks are formed.
2. the method for claim 1 is characterized in that: be positioned at this projection lower metal layer on those detection welding pads and comprise the adhesion layer (adhesion layer) that covers this protective layer and those detection welding pads, cover a barrier layer (barrier layer) of this adhesion layer and cover the binder course (wettablelayer) of this barrier layer.
3. lug manufacturing process of protecting detection welding pad, comprise that step (a) provides a wafer, this wafer has an active surface, has a protective layer, several convex pads and several detection welding pads on this active surface, and this protective layer exposes those convex pads and those detection welding pads; It is characterized in that: this processing procedure also comprises the steps:
(b) form a projection lower metal layer on the active surface of this wafer, cover this protective layer and those convex pads and those detection welding pads, this projection lower metal layer comprises the adhesion layer that covers this protective layer and those convex pads and those detection welding pads, cover a barrier layer of this adhesion layer and cover a binder course of this barrier layer;
(c) form several first photoresist layers on this projection lower metal layer, the position of those first photoresist layers is with respect to those convex pads and those detection welding pads;
The barrier layer and the binder course of this projection lower metal layer that (d) will be not be covered by those first photoresist layers remove, to expose this adhesion layer;
(e) remove those first photoresist layers;
(f) on this binder course and this adhesion layer, form one second photoresist layer;
(g) form several openings on this second photoresist layer, the position of those openings is corresponding to those convex pads;
(h) insert several welding blocks to those openings;
(i) remove this second photoresist layer;
(j) will do not removed, expose this protective layer by this adhesion layer that this binder course covered; And
(k) carry out a back welding process, it is spherical that those welding blocks are formed.
4. lug manufacturing process of protecting detection welding pad, comprise that step (a) provides a wafer, this wafer has an active surface, has a protective layer, several convex pads and several detection welding pads on this active surface, and this protective layer exposes those convex pads and those detection welding pads; It is characterized in that: this processing procedure also comprises the steps:
(b) on the active surface of this wafer, form a projection lower metal layer, cover this protective layer and those convex pads and those detection welding pads;
(c) form several first photoresist layers on this projection lower metal layer, the position of those first photoresist layers is corresponding to those convex pads and those detection welding pads;
(d) this projection lower metal layer that will do not covered by those first photoresist layers removes, and exposes this protective layer;
(e) remove those first photoresist layers;
(f) form a clathrum on this projection lower metal layer and this protective layer, have several openings on this clathrum, the position of those openings is corresponding to those convex pads;
(h) form metal to those openings;
(i) carry out a back welding process, it is spherical that those metals are formed; And
(j) remove this clathrum.
5. method as claimed in claim 4 is characterized in that: this clathrum is a metal foil.
6. method as claimed in claim 8 is characterized in that: described step (h) comprises that type metal is to those openings.
7. a crystal circle structure comprises a wafer, and this wafer has an active surface, has a protective layer, several convex pads and several detection welding pads on this active surface, and this protective layer does not cover those convex pads and those detection welding pads; It is characterized in that: this crystal circle structure also comprises several first projection lower metal layers that are positioned on those convex pads; Be positioned at several the second projection lower metal layers on those detection welding pads, this second projection lower metal layer comprises the adhesion layer that covers this protective layer and those detection welding pads, cover a barrier layer of this adhesion layer and cover a binder course of this barrier layer; And be positioned at several projections on those first projection lower metal layers.
8. crystal circle structure as claimed in claim 7 is characterized in that: this first projection lower metal layer comprises the adhesion layer that covers this protective layer and those convex pads, cover a barrier layer of this adhesion layer and cover a binder course of this barrier layer.
9. lug manufacturing process of protecting detection welding pad, comprise that step (a) provides a wafer, this wafer has an active surface, has a protective layer, several convex pads and several detection welding pads on this active surface, and this protective layer exposes those convex pads and those detection welding pads; It is characterized in that: described lug manufacturing process also comprises the steps:
(b) on those convex pads, form several first projection lower metal layers;
(c) form several second projection lower metal layers on those detection welding pads, this second projection lower metal layer comprises the adhesion layer that covers this protective layer and those detection welding pads, cover a barrier layer of this adhesion layer and cover a binder course of this barrier layer; And
(d) on those first projection lower metal layers, form several projections.
10. crystal circle structure as claimed in claim 9 is characterized in that: this first projection lower metal layer comprises the adhesion layer that covers this protective layer and those convex pads, cover a barrier layer of this adhesion layer and cover a binder course of this barrier layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610073723XA CN100464399C (en) | 2006-04-05 | 2006-04-05 | Lug process and wafer structure of protective detection welding pad |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610073723XA CN100464399C (en) | 2006-04-05 | 2006-04-05 | Lug process and wafer structure of protective detection welding pad |
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| CN101051617A CN101051617A (en) | 2007-10-10 |
| CN100464399C true CN100464399C (en) | 2009-02-25 |
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| CNB200610073723XA Active CN100464399C (en) | 2006-04-05 | 2006-04-05 | Lug process and wafer structure of protective detection welding pad |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104934391B (en) * | 2014-03-18 | 2018-05-18 | 日月光半导体制造股份有限公司 | Semiconductor device and semiconductor technology |
| US11309222B2 (en) * | 2019-08-29 | 2022-04-19 | Advanced Micro Devices, Inc. | Semiconductor chip with solder cap probe test pads |
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|---|---|---|---|---|
| US20020185749A1 (en) * | 1996-03-07 | 2002-12-12 | Farnworth Warren M. | Mask repattern process |
| US6649507B1 (en) * | 2001-06-18 | 2003-11-18 | Taiwan Semiconductor Manufacturing Company | Dual layer photoresist method for fabricating a mushroom bumping plating structure |
| CN1753159A (en) * | 2004-09-22 | 2006-03-29 | 日月光半导体制造股份有限公司 | Integrated wiring and inverse packaged chip structure and process |
| CN1753176A (en) * | 2004-09-22 | 2006-03-29 | 日月光半导体制造股份有限公司 | Inversion packaging structure, semiconductor chip having convex block and its manufacturing method |
-
2006
- 2006-04-05 CN CNB200610073723XA patent/CN100464399C/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020185749A1 (en) * | 1996-03-07 | 2002-12-12 | Farnworth Warren M. | Mask repattern process |
| US6649507B1 (en) * | 2001-06-18 | 2003-11-18 | Taiwan Semiconductor Manufacturing Company | Dual layer photoresist method for fabricating a mushroom bumping plating structure |
| CN1753159A (en) * | 2004-09-22 | 2006-03-29 | 日月光半导体制造股份有限公司 | Integrated wiring and inverse packaged chip structure and process |
| CN1753176A (en) * | 2004-09-22 | 2006-03-29 | 日月光半导体制造股份有限公司 | Inversion packaging structure, semiconductor chip having convex block and its manufacturing method |
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