CN100462846C - Thin film pattern layer producing method - Google Patents
Thin film pattern layer producing method Download PDFInfo
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- CN100462846C CN100462846C CNB2006100075499A CN200610007549A CN100462846C CN 100462846 C CN100462846 C CN 100462846C CN B2006100075499 A CNB2006100075499 A CN B2006100075499A CN 200610007549 A CN200610007549 A CN 200610007549A CN 100462846 C CN100462846 C CN 100462846C
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Abstract
The invention relates a film pattern layer manufacturing method, comprising the steps of: providing a substrate with several hathpaces; coating ink on the selected hathpace surfaces; and drying the ink to form the pattern layer.
Description
[technical field]
The present invention relates to a kind of manufacturing method of film pattern layer.
[background technology]
The method of making patterned layer on substrate at present mainly comprises: light lithography method and ink-jet method.
The light lithography method: this method is by forming in preparation on the substrate of required patterned layer on substrate, the coating photoresistance material, the light shield that utilization has a predetermined pattern exposes to photoresist and develops, or adds etch process, and forms the patterned layer on substrate with predetermined pattern.This light lithography method needs main equipment or complicated processing procedures such as vacuum plant, and the service efficiency of the method material is lower, thereby causes the manufacturing cost height.
Ink-jet method: adopt ink discharge device will form the certain position of the ink jet of patterned layer on substrate, form predetermined patterned layer on substrate after the ink dried at substrate.
When the tradition ink ejecting method is made patterned layer on substrate, generally be on substrate, to form barricade earlier,, be fixed on after the ink dried and form patterned layer on substrate between the barricade then with the zone of ink jet between barricade.But the height of this barricade is higher than the height of liquid ink, and difference of them is bigger after the ink dried, therefore, need the part that barricade exceeds ink be polished in modes such as grinding or etchings, to reach needed flatness requirement.In addition, because the capillary action between barricade and the ink, ink can be climbed on the barricade wall, can cause the Thinfilm pattern layer thickness at close barricade place bigger after the ink dried, and middle patterned layer on substrate thinner thickness, thereby make the patterned layer on substrate surface irregularity.
[summary of the invention]
In view of this, be necessary to provide a kind of manufacturing method of film pattern layer that improves the patterned layer on substrate flatness.
A kind of manufacturing method of film pattern layer comprises the following steps:
Substrate with several hathpaces is provided, and described high platform has the upper surface away from described substrate;
At selected high platform upper surface coating ink;
Dry ink forms patterned layer.
Compared with prior art, this manufacturing method of film pattern layer need not be made barricade, but ink is injected directly on high platform surface, by the effect of high platform surface tension and cohesion, be fixed on the high platform after making ink dried, need not grind the flatness that can realize required patterned layer on substrate.
[description of drawings]
Fig. 1 is the process flow diagram of embodiment of the invention manufacturing method of film pattern layer.
Fig. 2 provides the synoptic diagram of substrate.
Fig. 3 is the synoptic diagram that forms high platform material layer.
Fig. 4 is the synoptic diagram that forms high platform.
Fig. 5 is the synoptic diagram that forms patterned layer.
[embodiment]
As shown in Figure 1, it is the process flow diagram of embodiment of the invention manufacturing method of film pattern layer, and this method mainly comprises the following steps:
One substrate is provided;
On this substrate, form several hathpaces;
At selected high platform surface coated ink;
Dry ink forms patterned layer.
Below in conjunction with Fig. 2 to Fig. 5 this manufacturing method of film pattern layer is elaborated.
As shown in Figure 2, for a substrate 10 is provided, this substrate 10 can be selected for use but be not limited to glass substrate, silicon wafer substrate, sheet metal or plastic substrate etc.The area of substrate 10 is according to specific product and different.
As shown in Figure 3, form a high platform material layer 11, following different formation method arranged according to the employing material is different at the upper surface of substrate 10.
First kind is to adopt the photosensitive resin material, as acryl resin is that photoresistance or epoxy acrylate are that photoresistance, polyester acrylate are that upgrading acryl resins such as photoresistance, polycarbamate acrylic ester photoresistance are that photoresistance, Polyimide are that photoresistance, siloxane-based photoresistance or fluorine are photoresistance, can be coated with (SlitCoat), rotary coating (Spin Coat), crack rotary coating (Slit and Spin Coat) or dry film rubbing method (Dry Film Lamination) by the crack surface that resin material is coated on substrate 10 is formed high platform material layer 11.
Second kind is to adopt the non-photosensitive material, as indium tin oxide, indium-zinc oxide, zinc paste, cadmium tin-oxide, metallic aluminium etc., can form high platform material layer 11 by vacuum splashing and plating or evaporation coating technique.
As shown in Figure 4, be on substrate 10, to form high platform 12.Because the high platform material layer 11 that the photoresist material is made itself has photonasty, can directly by light shield it be exposed and develop, remove the high platform 12 that unnecessary high platform material layer 11 forms plurality of patternsization.By this step, the pattern on the light shield can be transferred to fully on this high platform 12.
Because indium tin oxide, indium-zinc oxide, zinc paste, cadmium tin-oxide, metallic aluminiums etc. are not had photonasty, therefore, need on high platform material layer 11, form one deck photoresist layer, remove the unnecessary part of photoresist layer then by light shield, the high platform material layer 11 that utilizes etching mode will not cover photoresist layer is again removed, and is last, utilize remover that photoresist layer is removed fully, to form several hathpaces 12.
Be appreciated that this high platform 12 also can be one-body molded with substrate 10, the rule of surface ground of substrate 10 is uneven, protrudes partly to be high platform 12, therefore, can omit the step of the high platform 12 of above-mentioned formation.This kind method adopts plastic substrate usually, finishes the one-body molded of substrate 10 and high platform 12 with injection molding method.
As shown in Figure 5, utilize ink discharge device, for example Thermal Bubble Ink-jet Printer device or piezoelectric ink jet device are with the surface of needed ink jet at selected high platform 12.Because the effect of high platform 12 surface tension and cohesion, ink can be attached on the high platform 12, utilize then solidification equipment with this ink cured to form patterned layer 13, such as adopting vacuum plant, heating arrangement or light-emitting device (common be ultraviolet rays emitting apparatus) or wherein both or the double employing of three, and make ink cured on high platform 12.
Then, make between ink discharge device and the substrate 10 relative motion takes place, so that all form patterned layer 13 on all chosen high platforms 12.
If will realize the multilayer pattern layer, can repeat step shown in Figure 5, the coating ink, solidified ink then is until the coating of finishing the multilayer pattern layer.
Simultaneously, if need also can increase by a processing procedure, directly utilize ink discharge device to spray into another kind of material as the separation between the high platform 12 in the zone between the high platform 12, this material is common to be the black carbon black ink.
After forming patterned layer 13,, can on patterned layer 13, form a protective seam for the moisture resistance of strengthening patterned layer on substrate 13, anti fouling performance, inoxidizability etc.This protective seam generally adopts the transparent material of high reliability to make, as Polyimide resin system, epoxy resin, acryl resin system, polyvinyl alcohol resin system etc.
This manufacturing method of film pattern layer is applicable is making the product that colored filter, Organic Light Emitting Diode etc. adopt the ink-jet application processing procedure.In the process of making colored filter, available the method is finished the manufacturing of red, green, blue three primary colours layer respectively.And in Organic Light Emitting Diode was made, the method was made conductive layer, luminescent layer and electronics electricity hole transport layer etc.But, can be different at the ink that the patterned layer on substrate of making various products is required.
In addition, those skilled in the art can also do other variation in spirit of the present invention, and certainly, the variation that these are done according to spirit of the present invention all should be included within the present invention's scope required for protection.
Claims (19)
1. a manufacturing method of film pattern layer comprises the following steps:
Substrate with several hathpaces is provided, and described high platform has the upper surface away from described substrate;
At selected high platform upper surface cloth ink;
Dry ink forms patterned layer.
2. manufacturing method of film pattern layer as claimed in claim 1, wherein this high platform and substrate are one-body molded.
3. manufacturing method of film pattern layer as claimed in claim 2, it is one-body molded that wherein this high platform and substrate adopt ejection formation.
4. manufacturing method of film pattern layer as claimed in claim 1, wherein the formation step of this high platform comprises: form a high platform material layer on a substrate; Utilize the light shield exposure imaging to remove unnecessary high platform material layer to form several hathpaces.
5. manufacturing method of film pattern layer as claimed in claim 4, wherein the material of this high platform material layer is a photoresist.
6. manufacturing method of film pattern layer as claimed in claim 5, wherein this high platform material layer is that acryl resin is that photoresistance, upgrading acryl resin are that photoresistance, Polyimide are that photoresistance, siloxane-based photoresistance or fluorine are photoresistance.
7. manufacturing method of film pattern layer as claimed in claim 5 wherein forms high platform material layer by rotary coating, crack coating, crack rotary coating or dry film rubbing method.
8. manufacturing method of film pattern layer as claimed in claim 1, wherein the forming process of this high platform comprises: form a high platform material layer on substrate; On this high platform material layer, form photoresist layer; Utilize the light shield exposure to remove unnecessary photoresist layer; Remove the high platform material layer that does not cover photoresist layer; Remove remaining photoresist layer and form several hathpaces.
9. manufacturing method of film pattern layer as claimed in claim 8, wherein the material of this high platform material layer is indium tin oxide, indium-zinc oxide, zinc paste, indium cadmium oxide or aluminium.
10. manufacturing method of film pattern layer as claimed in claim 1, it is to adopt ink discharge device coating ink.
11. manufacturing method of film pattern layer as claimed in claim 10 further comprises making ink discharge device and substrate relative motion, finishes the coating on all selected high platforms.
12. manufacturing method of film pattern layer as claimed in claim 10, wherein this ink discharge device is thermal bubble type or piezoelectric ink jet device.
13. manufacturing method of film pattern layer as claimed in claim 1, it is to adopt vacuum plant, heating arrangement or light-emitting device solidified ink.
14. manufacturing method of film pattern layer as claimed in claim 1 further comprises the step of the protective seam that forms the cover film patterned layer.
15. manufacturing method of film pattern layer as claimed in claim 14, wherein the material of this protective seam is a transparency material.
16. manufacturing method of film pattern layer as claimed in claim 15, wherein the material of this protective seam is Polyimide resin system, epoxy resin, acryl resin system or polyvinyl alcohol resin system.
17. manufacturing method of film pattern layer as claimed in claim 1, wherein this substrate is glass substrate, silicon wafer substrate, metal substrate or plastic substrate.
18. manufacturing method of film pattern layer as claimed in claim 1, it further is included in packing material between the high platform.
19. manufacturing method of film pattern layer as claimed in claim 18, it is to utilize ink discharge device packing material between Gao Tai.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100075499A CN100462846C (en) | 2006-02-15 | 2006-02-15 | Thin film pattern layer producing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100075499A CN100462846C (en) | 2006-02-15 | 2006-02-15 | Thin film pattern layer producing method |
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| Publication Number | Publication Date |
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| CN101021687A CN101021687A (en) | 2007-08-22 |
| CN100462846C true CN100462846C (en) | 2009-02-18 |
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| CNB2006100075499A Expired - Fee Related CN100462846C (en) | 2006-02-15 | 2006-02-15 | Thin film pattern layer producing method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1321254A (en) * | 1999-07-28 | 2001-11-07 | 松下电器产业株式会社 | Method for mfg. color filter, color filter, and liquid crystal device |
| CN1138458C (en) * | 1996-11-25 | 2004-02-11 | 精工爱普生株式会社 | Organic EL elements and its producing method and organic EL display device |
| US20040115339A1 (en) * | 2002-09-19 | 2004-06-17 | Nobuyuki Ito | Method and apparatus for manufacturing organic EL display and color filter by ink jet method |
| US20050046068A1 (en) * | 2003-08-28 | 2005-03-03 | Industrial Technology Research Institute | Color filter manufacturing method for a plastic substrate |
-
2006
- 2006-02-15 CN CNB2006100075499A patent/CN100462846C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1138458C (en) * | 1996-11-25 | 2004-02-11 | 精工爱普生株式会社 | Organic EL elements and its producing method and organic EL display device |
| CN1321254A (en) * | 1999-07-28 | 2001-11-07 | 松下电器产业株式会社 | Method for mfg. color filter, color filter, and liquid crystal device |
| US20040115339A1 (en) * | 2002-09-19 | 2004-06-17 | Nobuyuki Ito | Method and apparatus for manufacturing organic EL display and color filter by ink jet method |
| US20050046068A1 (en) * | 2003-08-28 | 2005-03-03 | Industrial Technology Research Institute | Color filter manufacturing method for a plastic substrate |
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| CN101021687A (en) | 2007-08-22 |
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