CN100461469C - GaN基Ⅲ-Ⅴ族氮化物发光二极管及其制造方法 - Google Patents
GaN基Ⅲ-Ⅴ族氮化物发光二极管及其制造方法 Download PDFInfo
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- CN100461469C CN100461469C CNB2004100768629A CN200410076862A CN100461469C CN 100461469 C CN100461469 C CN 100461469C CN B2004100768629 A CNB2004100768629 A CN B2004100768629A CN 200410076862 A CN200410076862 A CN 200410076862A CN 100461469 C CN100461469 C CN 100461469C
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- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12P—FERMENTATION OR ENZYME-USING PROCESSES TO SYNTHESISE A DESIRED CHEMICAL COMPOUND OR COMPOSITION OR TO SEPARATE OPTICAL ISOMERS FROM A RACEMIC MIXTURE
- C12P19/00—Preparation of compounds containing saccharide radicals
- C12P19/26—Preparation of nitrogen-containing carbohydrates
- C12P19/28—N-glycosides
- C12P19/30—Nucleotides
- C12P19/34—Polynucleotides, e.g. nucleic acids, oligoribonucleotides
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- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12Q—MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
- C12Q1/00—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
- C12Q1/68—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving nucleic acids
- C12Q1/6806—Preparing nucleic acids for analysis, e.g. for polymerase chain reaction [PCR] assay
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Abstract
Description
Claims (22)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100768629A CN100461469C (zh) | 2000-12-18 | 2001-12-18 | GaN基Ⅲ-Ⅴ族氮化物发光二极管及其制造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP77746/2000 | 2000-12-18 | ||
JP4035/2001 | 2001-01-29 | ||
CNB2004100768629A CN100461469C (zh) | 2000-12-18 | 2001-12-18 | GaN基Ⅲ-Ⅴ族氮化物发光二极管及其制造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011433043A Division CN100452447C (zh) | 2000-12-18 | 2001-12-18 | GaN基Ⅲ-Ⅴ族氮化物发光二极管及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1630112A CN1630112A (zh) | 2005-06-22 |
CN100461469C true CN100461469C (zh) | 2009-02-11 |
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ID=40433711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2004100768629A Expired - Fee Related CN100461469C (zh) | 2000-12-18 | 2001-12-18 | GaN基Ⅲ-Ⅴ族氮化物发光二极管及其制造方法 |
Country Status (1)
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CN (1) | CN100461469C (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100012954A1 (en) * | 2008-07-21 | 2010-01-21 | Chen-Hua Yu | Vertical III-Nitride Light Emitting Diodes on Patterned Substrates with Embedded Bottom Electrodes |
US8049327B2 (en) * | 2009-01-05 | 2011-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon via with scalloped sidewalls |
CN108133984B (zh) * | 2018-01-30 | 2020-05-19 | 厦门乾照光电股份有限公司 | 一种垂直结构发光二极管及其制作方法 |
US11011614B2 (en) * | 2018-06-29 | 2021-05-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | High electron mobility transistor (HEMT) device and method of forming same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1145892A (ja) * | 1997-05-28 | 1999-02-16 | Sony Corp | 半導体装置およびその製造方法 |
US5905275A (en) * | 1996-06-17 | 1999-05-18 | Kabushiki Kaisha Toshiba | Gallium nitride compound semiconductor light-emitting device |
CN1270420A (zh) * | 1999-03-31 | 2000-10-18 | 丰田合成株式会社 | Ⅲ族类氮化物半导体器件及其制造方法 |
JP2000312049A (ja) * | 1999-04-27 | 2000-11-07 | Fuji Photo Film Co Ltd | 半導体光機能装置 |
-
2001
- 2001-12-18 CN CNB2004100768629A patent/CN100461469C/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5905275A (en) * | 1996-06-17 | 1999-05-18 | Kabushiki Kaisha Toshiba | Gallium nitride compound semiconductor light-emitting device |
JPH1145892A (ja) * | 1997-05-28 | 1999-02-16 | Sony Corp | 半導体装置およびその製造方法 |
CN1270420A (zh) * | 1999-03-31 | 2000-10-18 | 丰田合成株式会社 | Ⅲ族类氮化物半导体器件及其制造方法 |
JP2000312049A (ja) * | 1999-04-27 | 2000-11-07 | Fuji Photo Film Co Ltd | 半導体光機能装置 |
Also Published As
Publication number | Publication date |
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CN1630112A (zh) | 2005-06-22 |
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ASS | Succession or assignment of patent right |
Owner name: SAMSUNG LED CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRO-MECHANICS CO., LTD. Effective date: 20100909 |
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Effective date of registration: 20100909 Address after: Gyeonggi Do Korea Suwon Patentee after: Samsung LED Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electro-Mechanics Co., Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SAMSUNG LED CO., LTD. Effective date: 20121214 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121214 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Electronics Co., Ltd. Address before: Gyeonggi Do Korea Suwon Patentee before: Samsung LED Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090211 Termination date: 20141218 |
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EXPY | Termination of patent right or utility model |