CN100456090C - Liquid crystal display device and thin film transistor base plate thereof - Google Patents
Liquid crystal display device and thin film transistor base plate thereof Download PDFInfo
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- CN100456090C CN100456090C CNB2006101363421A CN200610136342A CN100456090C CN 100456090 C CN100456090 C CN 100456090C CN B2006101363421 A CNB2006101363421 A CN B2006101363421A CN 200610136342 A CN200610136342 A CN 200610136342A CN 100456090 C CN100456090 C CN 100456090C
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- 239000010409 thin film Substances 0.000 title claims abstract description 68
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 5
- 239000003990 capacitor Substances 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
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- 238000010168 coupling process Methods 0.000 description 4
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- 239000013039 cover film Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
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- 239000012467 final product Substances 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
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Abstract
A kind of liquid crystal display device mainly includes many picture element electrodes,sweep circuit,data circuit and auxiliary capacitance wire on the thin film transistor base plate, and the light shelter array on the color light filter base plate. Between the adjacent two-phase sweep circuit every data circuit bends to the first part, the second part and the two interconnecting pieces between the first part and the second part. The first part and the second part are separately covered by the two adjacent picture element electrodes. Every auxiliary capacitance has a main body which is parallel with the stated sweep circuit and the main body's extension part. Among them, the auxiliary capacitance wire's extension part lies between the data circuit's interconnecting piece.
Description
Technical field
The present invention relates to a kind of LCD, particularly a kind of LCD with storage capacitors assembly (storagecapacitor).
Background technology
Because size is little and low power consumption and the flat panel display device released has LCD, electric slurry display panel (PDP:Plasma Display Panel), electroluminescent display (ELD:Electroluminescent Display) and vacuum active display (VFD:Vacuum FluorescentDisplay).In these flat panel display device, although have different shortcomings separately, because image quality is good and power consumption is low, the development activities of LCD is still active.
Be different from existing monolithic crystal pipe (monolithic transistor) and be formed at the semiconductor base material, thin film transistor (TFT) is made on a base material with accumulation number layer film and is formed.Therefore thin film transistor (TFT) has the structure that simply reaches easy manufacturing than the monolithic crystal pipe.Therefore, thin film transistor (TFT) has been widely used on the switch module as large scale electronics device (as LCD) for example.For the image that makes Thin Film Transistor-LCD has consistance, the signal voltage that is imposed by data circuit in the write operation must be maintained fixed in the special time before another signal receives.Therefore, for promoting the quality of image of display, generally can be provided with a storage capacitors assembly (storage capacitor) at each pixel region.
Figure 1 shows that a pixel arrangement figure (pixellayout) of an existing Thin Film Transistor-LCD.As shown in the figure, multi-strip scanning circuit 2 is arranged with data circuit 5 and is formed on the substrate 1.Pixel region is meant the zone that two adjacent trace wirings and two adjacent data circuits are enclosed.Each pixel region is provided with a pixel electrode 4, and it is connected with semi-conductor layer 3 by a drain electrode 7.This semiconductor layer 3 is formed on the trace wiring 2 and by one source pole 6 and is connected with data circuit 5.In addition, each pixel region is provided with a capacitance electrode 10.
Simultaneously save energy resource consumption again because LCD needs preferable display brightness, so aperture opening ratio is high more good more.A kind of in order to obtain high aperture opening ratio (aperture ratio) ratio of transmission region (can), to have developed at present with overlap LCD on data circuit of pixel electrode.Yet this kind structure can cause the increase of coupling capacitance between pixel electrode and the data circuit (Csd:couplingcapacitance).If though when the coupling capacitance Csd1/Csd2 that pixel electrode both sides and adjacent data circuit are produced is consistent, can effectively reduce coupling capacitance to adverse effect that the quality of image caused.Yet,, so very difficultly between pixel electrode and the data circuit aim at fully because pixel electrode and data circuit are to utilize different photoetching processes to form.Therefore, when bit errors produces, the coupling capacitance Csd1/Csd2 that is produced at pixel electrode both sides and adjacent data circuit can't be consistent, and cause inhomogeneous demonstration.
Therefore, No. 6633360 patent of the U.S. discloses a kind of LCD (referring to Fig. 2) with S type data circuit 8, in order to solve the above-mentioned problem that produces the Csd amount of variability because of process shifts.But the upright degree of accuracy of consideration group to be to avoid light leak, is located at light shield layer (BM:BlackMatrix) 9 on the colored filter substrate and generally can be designed to wide the S type data circuit 8 that is enough to cover fully; Yet this will cause the LCD aperture opening ratio to decline to a great extent.In addition, capacitance electrode 10 generally is with for example aluminium, chromium, tantalum or the molybdenum formation of lighttight conducting metal, thereby can further cause aperture opening ratio (aperture ratio) (getting final product the ratio of transmission region) to descend.
In sum, how can provide a kind of LCD and thin film transistor base plate thereof that can solve the problem of generation of Csd amount of variability and aperture opening ratio decline simultaneously, become present problem demanding prompt solution then.
Summary of the invention
Therefore, fundamental purpose of the present invention is to provide a kind of can solve LCD and the thin film transistor base plate thereof that the Csd amount of variability produced and improved aperture opening ratio simultaneously, to overcome and to improve above-mentioned prior art problems.
Another object of the present invention is to provide a kind of LCD and thin film transistor base plate thereof that can improve the storage capacitors capacity.
The invention provides a kind of LCD, comprise at least:
One first substrate;
One second substrate;
One liquid crystal layer is located between described first substrate and second substrate;
The multi-strip scanning circuit is located on described first substrate, and described trace wiring is parallel to each other;
Many data circuits, be located on described first substrate, described data circuit is parallel to each other and vertical with described trace wiring, described trace wiring and data circuit form the pixel region of a plurality of arranged, each pixel region is defined by two adjacent trace wirings and two adjacent data circuits, and wherein each data circuit is bent into a first, a second portion and is connected in two connecting portions between this first and the second portion between two adjacent trace wirings;
A plurality of pixel electrodes are located at described pixel region respectively, and the relative side part that the first of each data circuit and second portion are respectively two adjacent pixel electrodes covers;
A plurality of thin film transistor (TFT)s are connected to described pixel electrode and are located at the multi-strip scanning circuit and the data circuit infall; And
A plurality of auxiliary capacitor circuits, it respectively has the extension that a main body and that is parallel to described trace wiring is extended outward by described main body,
Wherein, in each pixel region, the extending part of described auxiliary capacitor circuit is between described two connecting portions of corresponding data circuit.
Also comprise a light and cover array, be located on described second substrate, and the extension of described auxiliary capacitor circuit is covered array by described light and covers.
The extension of described auxiliary capacitor circuit is adjacent to the second portion of described data circuit.
One of two connecting portions of described data circuit are positioned at corresponding trace wiring top and as the one source pole of described thin film transistor (TFT).
Another connecting portion of described data circuit is in the centre of two adjacent trace wirings and be parallel to this trace wiring, and across two adjacent pixel regions.
Each pixel region also is provided with:
One auxiliary capacitance electrode;
One connection line is connected to described auxiliary capacitance electrode in order to the drain electrode with described thin film transistor (TFT);
And
One contact hole in order to electrically connect described auxiliary capacitance electrode and described pixel electrode, makes described auxiliary capacitance electrode and described pixel electrode jointly as the opposite electrode of described auxiliary capacitor circuit,
Wherein, described connection line is all between two connecting portions of described data circuit.
Described second substrate also is provided with a light and covers array, and the source electrode of described thin film transistor (TFT) and drain electrode and described connection line are covered array by described light fully and cover.
The bearing of trend of the main body of described auxiliary capacitor circuit and the second portion of described data circuit intersect, and the bearing of trend of the extension of described auxiliary capacitor circuit is parallel to the second portion of described data circuit.
The first of described data circuit also comprises a projection, is located at described trace wiring top and as the one source pole of described thin film transistor (TFT).
Described second substrate also is provided with a light and covers array, and each described pixel region also is provided with:
One auxiliary capacitance electrode;
One connection line is connected to described auxiliary capacitance electrode in order to the drain electrode with described thin film transistor (TFT); And
One contact hole in order to electrically connect described auxiliary capacitance electrode and described pixel electrode, makes described auxiliary capacitance electrode and described pixel electrode jointly as the opposite electrode of described auxiliary capacitor circuit,
Wherein, in described pixel region, described light covers array and has at least a portion that an enlarged portion covers source electrode and the drain electrode and the described connection line of described thin film transistor (TFT).
Described second substrate also is provided with a light and covers array, and each described pixel region also is provided with:
One auxiliary capacitance electrode;
One connection line is connected to described auxiliary capacitance electrode in order to the drain electrode with described thin film transistor (TFT); And
One contact hole in order to electrically connect described auxiliary capacitance electrode and described pixel electrode, makes described auxiliary capacitance electrode and described pixel electrode jointly as the opposite electrode of described auxiliary capacitor circuit,
Wherein, described light covers the connection line that array covers the source electrode of described thin film transistor (TFT) and drain electrode fully and covers at least a portion.
Described connection line has at least between connecting portion and the trace wiring adjacent with this connecting portion of a part in two connecting portions of described data circuit.
The present invention also provides a kind of thin film transistor base plate, has a plurality of pixel regions of arranged, and described thin film transistor base plate comprises at least:
The multi-strip scanning circuit, described trace wiring is parallel to each other;
Many data circuits, described data circuit is parallel to each other and vertical with described trace wiring, described trace wiring and data circuit form the pixel region of a plurality of arranged, each pixel region is defined by two adjacent trace wirings and two adjacent data circuits, and wherein each data circuit is bent into a first, a second portion and is connected in two connecting portions between described first and the second portion between two adjacent trace wirings;
A plurality of pixel electrodes are located at described pixel region respectively, and the relative side part that the described first of each data circuit and second portion are respectively two adjacent pixel electrodes covers;
A plurality of thin film transistor (TFT)s are connected to described pixel electrode and are located at many brake cable roads and data circuit infall; And
A plurality of auxiliary capacitor circuits, it respectively has the extension that a main body and that is parallel to described trace wiring is extended outward by described main body,
Wherein, in each pixel region, the extending part of described auxiliary capacitor circuit is between described two connecting portions of corresponding data circuit.
The extension of described auxiliary capacitor circuit is adjacent to the second portion of described data circuit.
One of two connecting portions of described data circuit are positioned at corresponding trace wiring top and as the one source pole of described thin film transistor (TFT).
Another connecting portion of described data circuit is in the centre of two adjacent trace wirings and be parallel to described trace wiring, and across two adjacent pixel regions.
Each pixel region also is provided with:
One auxiliary capacitance electrode;
One connection line is connected to described auxiliary capacitance electrode in order to the drain electrode with described thin film transistor (TFT);
And
One contact hole in order to electrically connect described auxiliary capacitance electrode and described pixel electrode, makes described auxiliary capacitance electrode and described pixel electrode jointly as the opposite electrode of described auxiliary capacitor circuit,
Wherein, described connection line is all between two connecting portions of described data circuit.
The bearing of trend of the main body of described auxiliary capacitor circuit and the second portion of described data circuit intersect, and the bearing of trend of the extension of described auxiliary capacitor circuit is parallel to the second portion of described data circuit.
The first of described data circuit also comprises a projection, is located at described trace wiring top and as the one source pole of described thin film transistor (TFT).
Described pixel region also is provided with:
One auxiliary capacitance electrode;
One connection line is connected to described auxiliary capacitance electrode in order to the drain electrode with described thin film transistor (TFT); And
One contact hole in order to electrically connect described auxiliary capacitance electrode and described pixel electrode, makes described auxiliary capacitance electrode and described pixel electrode jointly as the opposite electrode of described auxiliary capacitor circuit,
Wherein said connection line has at least between connecting portion and the trace wiring adjacent with this connecting portion of a part in two connecting portions of described data circuit.
From the above, be used for LCD of the present invention and mainly comprise a plurality of pixel electrodes, trace wiring, data circuit and the auxiliary capacitance line of being located on the thin film transistor base plate, and the light of being located on the colored filter substrate covers array.
For reaching above-mentioned and other purpose, each data circuit is bent into a first, a second portion and is connected in two connecting portions between this first and the second portion between two adjacent trace wirings.The relative side part that described first and second portion are respectively two adjacent pixel electrodes covers, and causes the harmful effect of Csd amount of variability generation in order to bit errors between effective minimizing pixel electrode and the data circuit.Each auxiliary capacitor circuit respectively has the extension that a main body and that is parallel to described trace wiring is extended outward by this main body.
Extending part that it should be noted that each auxiliary capacitor circuit is between two connecting portions of corresponding data circuit.Preferably, part or all of the extension of each auxiliary capacitor circuit covered array by this light and covered.Therefore, though the auxiliary capacitor circuit generally forms with lighttight conducting metal,,, and don't can reduce the area in light-permeable zone so this extension can provide extra storage capacitors because this extension is positioned at light fully and covers the zone that array covers.
In according to another embodiment of the present invention, be connected in the drain electrode that is formed on this thin film transistor base plate and have a part at least between the connecting portion and an adjacent scanning lines road of corresponding data circuit, so that bigger light-permeable zone to be provided with connection line between the auxiliary capacitance electrode.
In according to further embodiment of this invention, the first of each data circuit also has a projection (being positioned at this trace wiring top) as source electrode.
In sum, by above-mentioned storage capacitors design, the present invention can increase the area in light-permeable zone by reducing light tight region area (promptly reducing the area of the light tight main body of auxiliary capacitor circuit) under the structure of the data circuit that can solve the generation of Csd amount of variability; Simultaneously, utilize the additional storage electric capacity that extension provided of auxiliary capacitor circuit that enough storage capacitors are provided.Therefore, utilize the LCD of storage capacitors of the present invention design to have high aperture and the advantage of enough storage capacitors still can be provided.
Description of drawings
Fig. 1 is the pixel arrangement figure (pixel layout) of existing Thin Film Transistor-LCD;
Fig. 2 is the pixel arrangement figure of another existing Thin Film Transistor-LCD;
Fig. 3 is the pixel arrangement figure of LCD according to an embodiment of the invention;
Fig. 4 is the pixel arrangement figure of LCD according to another embodiment of the present invention;
Fig. 5 is the pixel arrangement figure of LCD according to another embodiment of the present invention.
The primary clustering symbol description:
1 substrate, 2 sweep traces
3 semiconductor layers, 4 pixel electrodes
5 data circuits, 6 source electrodes
7 drain electrodes, 8 data circuits
9 light shield layers
112 trace wirings, 115 data circuits
The 115b of 115a first second portion
117 drain electrodes, 122 pixel electrodes
124 auxiliary capacitor circuit 124a main bodys
124b extension 125 auxiliary capacitance electrodes
126 thin film transistor (TFT)s, 130 contact holes
140 light shield layer 140a enlarged portion
142 connection lines
Embodiment
The present invention is described in detail below in conjunction with accompanying drawing.
Figure 3 shows that the pixel arrangement figure of LCD 100 (pixell ayout) according to an embodiment of the invention.Mainly comprising a liquid crystal layer (not being shown among the figure) according to LCD of the present invention is sealed between one first substrate and one second substrate.
With reference to Fig. 3, multi-strip scanning circuit 112 is arranged in parallel and is located on first substrate, and many data circuits parallel to each other 115 extend with the direction vertical with trace wiring 112 and are located on first substrate.First substrate also is provided with the auxiliary capacitor circuit 124 of individual wired, and it is parallel with trace wiring 112.Multi-strip scanning circuit 112 disposes the pixel region that forms a plurality of arranged with data circuit 115, and these trace wirings 112 and data circuit 115 are insulated from each other by a gate insulation layer (not being shown among the figure).Pixel region is meant the zone that two adjacent trace wirings 112 and two adjacent data circuits 115 are enclosed.Each pixel region is provided with a for example thin film transistor (TFT) 126 of a pixel electrode 122 and a switch module, and thin film transistor (TFT) 126 is located at the contiguous infall that scans circuit 112 and data circuit 115.Second substrate is provided with a light and covers array, for example light shield layer (BM) 140, colored filter be used for display color (not being shown among the figure) and a transparency electrode for example indium tin oxide (ITO) electrode (not being shown among the figure) as community electrode (commonelectrode).Generally speaking, first substrate is called thin film transistor base plate, and second substrate is called colored optical filtering substrates, because it is provided with colored filter.In another kind of embodiment, light shield layer or colored filter also can be located on first substrate.
As shown in Figure 3, each data circuit 115 be bent into a 115a of first, a second portion 115b between the two adjacent trace wirings 112 and be connected in the 115a of first and second portion 115b between connecting portion 115c, 115a of first and second portion 115b are parallel to each other, and connecting portion 115c is positioned at the intermediate point of two adjacent trace wirings 112 and be parallel to trace wiring 112, and across two adjacent pixel regions.By the 115a of first of data circuit 115 and second portion 115b are overlapped with the relative side of two adjacent pixel electrodes 122 respectively, can effectively reduce the harmful effect that bit errors between pixel electrode 122 and the data circuit 115 causes the Csd amount of variability.And data circuit 115 bends above across trace wiring 112 once more, forms the connecting portion 115d that another is parallel to trace wiring 112, connects the next 115a of first to continue.Thin film transistor (TFT) 126 comprises gate electrode, semi-conductor layer (not being shown among the figure), the formed source electrode 116 of connecting portion 115d and that is extended in the bending of trace wiring 112 tops by data circuit 115 that is formed by trace wiring 112 and drains 117.
In LCD according to present embodiment, storage capacitors (storage capacitor, Cs) be located in the pixel region, the gate electrode that it forms above-mentioned auxiliary capacitor circuit 124, trace wiring 112 and be used for thin film transistor (TFT) 126 with a grid metal level, and the source electrode 116 and drain electrode 117 that form an auxiliary capacitance electrode 125, above-mentioned data circuit 115 and be used for thin film transistor (TFT) 126 with a data metal layer.A be separated by specific range and of auxiliary capacitor circuit 124 and trace wiring 112 by drive.Auxiliary capacitance electrode 125 roughly is horizontal T font and is located at each pixel region and overlaps with corresponding auxiliary capacitor circuit 124.Storage capacitors Cs comprises a contact hole 130, in order to electrically connect auxiliary capacitance electrode 125 and pixel electrode 122, makes auxiliary capacitance electrode 125 and pixel electrode 122 jointly as the opposite electrodes (counter electrode) of auxiliary capacitor circuit 124.Contact hole 130 comprises a through hole, and this through hole can utilize the conductive layer (for example indium tin oxide (ITO)) that forms pixel electrode 122 to be connected.Auxiliary capacitor circuit 124 and opposite electrode form a storage capacitors unit.The purpose of this storage capacitors unit is that one preestablished in the time after thin film transistor (TFT) (TFT:Thin Film Transistor) cuts out, and the voltage of pixel electrode 122 is maintained in the particular range.Because the drain electrode 117 of thin film transistor (TFT) 126 is to be connected to auxiliary capacitance electrode 125 by a connection line 142, therefore when sweep signal input scan circuit 112, thin film transistor (TFT) 126 will be opened and signal of video signal (data signal) 117 will be sent into pixel electrode 122 by connection line 142, auxiliary capacitance electrode 125 and contact hole 130 by draining.
Auxiliary capacitor circuit 124 according to the present invention has the extension 124b that a main body 124a and who is parallel to trace wiring 112 is extended outward by this main body 124a.The bearing of trend of this main body 124a and the bearing of trend of extension 124b are not parallel, and the second portion 115b of the bearing of trend of main body 124a and data circuit 115 intersects, and the bearing of trend of extension 124b then is parallel to the second portion 115b of data circuit 115.It should be noted that as shown in Figure 3 the extension 124b of auxiliary capacitor circuit 124 is between the connecting portion 115c and connecting portion 115d of data circuit 115, and adjacent to the second portion 115b of data circuit 115.Therefore, though auxiliary capacitor circuit 124 generally is that for example aluminium, chromium, tantalum or molybdenum form with lighttight conducting metal, but because extension 124b is positioned at light to cover the zone that array 140 is covered, so extension 124b can provide extra storage capacitors, and don't can reduce the area in light-permeable zone.As shown in the figure, in present embodiment, the major part of extension 124b is positioned at light and covers the zone that array 140 is covered.Better person, extension 124b all is positioned at this light and covers the zone that array 140 is covered.
Figure 4 shows that the pixel arrangement figure of LCD 200 according to another embodiment of the present invention, wherein same components symbolic representation same components.In this embodiment, data circuit 115 is bent between two adjacent trace wirings 112 and comprises the 115a of first, second portion 115b and two connecting portion 115c and 115d, wherein the 115a of first is positioned at same pixel region with the thin film transistor (TFT) 126 that is driven, and the 115a of first also has a projection 115e (being positioned at trace wiring 112 tops) as source electrode 116.In addition, the auxiliary capacitor circuit 124 of present embodiment has the extension 124b that a main body 124a and who is parallel to trace wiring 112 is extended outward by this main body 124a, the extension 124b of auxiliary capacitor circuit 124 is between the connecting portion 115c and connecting portion 115d of data circuit 115, and connecting portion 115c and connecting portion 115d are parallel to each other.
As shown in Figure 4, light covers the part that array 140 has source electrode 116 and the drain electrode 117 and the connection line 142 of an enlarged portion 140a cover film transistor 126, in order to cover extraneous light, avoids light leak.
Figure 5 shows that the pixel arrangement figure of LCD 300 according to another embodiment of the present invention, wherein same components symbolic representation same components.In this embodiment, data circuit 115 is bent between two adjacent trace wirings 112 and comprises the 115a of first, second portion 115b and two connecting portion 115c and 115d, wherein second portion 115b is positioned at same pixel region with the thin film transistor (TFT) 126 that is driven, and the 115a of first also has the source electrode 116 of a projection 115e (being positioned at trace wiring 112 tops) as thin film transistor (TFT) 126.
In addition, the auxiliary capacitor circuit 124 of present embodiment has the extension 124b that a main body 124a and who is parallel to trace wiring 112 is extended outward by this main body 124a, the extension 124b of auxiliary capacitor circuit 124 is between the connecting portion 115c and connecting portion 115d of the data circuit 115 of adjacent pixel regions, the second portion 115b of the bearing of trend of main body 124a and data circuit 115 intersects, and the bearing of trend of extension 124b then is parallel to the second portion 115b of data circuit 115.Connection line 142 has a part at least between the connecting portion 115d and an adjacent scanning lines road 112 of corresponding data circuit 115.Compared to embodiment shown in Figure 4, in this embodiment, connection line 142 has a part at least between the connecting portion 115d and adjacent scanning lines road 112 of data circuit 115, therefore light cover array 140 do not need additionally to be provided with bulge 140a can be with the part of source electrode 116 and the drain electrode 117 and the connection line 142 of cover film transistor 126, so LCD 300 can provide bigger light-permeable zone (compared to LCD 200).
It should be noted that, in LCD shown in Figure 3 100, the connection line 142 that connects drain electrode 117 and auxiliary capacitance electrode 125 is between the connecting portion 115c and connecting portion 115d of data circuit 115, making light cover array 140 does not need whole and extension 124b at least a portion that above-mentioned enlarged portion 140a gets final product source electrode 116 with drain electrode 117, the connection line 142 of cover film transistor 126 additionally is set, so LCD 100 can provide bigger light-permeable zone (compared to LCD 200 and 300).
In sum, by aforesaid storage capacitors design, the present invention can increase the area in light-permeable zone by reducing light tight region area (promptly reducing the area of auxiliary capacitor circuit 124 light tight main body 124a) under the structure of the data circuit that can solve the generation of Csd amount of variability; Simultaneously, the additional storage electric capacity that utilizes the extension 124b of auxiliary capacitor circuit 124 to be provided provides enough storage capacitors.Therefore, utilize the LCD of storage capacitors design of the present invention to have high aperture and still can provide enough storage capacitors.
Above embodiment only is used to illustrate the present invention, but not is used to limit the present invention.
Claims (20)
1. a LCD is characterized in that, comprises at least:
One first substrate;
One second substrate;
One liquid crystal layer is located between described first substrate and second substrate;
The multi-strip scanning circuit is located on described first substrate, and described trace wiring is parallel to each other;
Many data circuits, be located on described first substrate, described data circuit is parallel to each other and vertical with described trace wiring, described trace wiring and data circuit form the pixel region of a plurality of arranged, each pixel region is defined by two adjacent trace wirings and two adjacent data circuits, and wherein each data circuit is bent into a first, a second portion and is connected in two connecting portions between this first and the second portion between two adjacent trace wirings;
A plurality of pixel electrodes are located at described pixel region respectively, and the relative side part that the first of each data circuit and second portion are respectively two adjacent pixel electrodes covers;
A plurality of thin film transistor (TFT)s are connected to described pixel electrode and are located at the multi-strip scanning circuit and the data circuit infall; And
A plurality of auxiliary capacitor circuits, it respectively has the extension that a main body and that is parallel to described trace wiring is extended outward by described main body,
Wherein, in each pixel region, the extending part of described auxiliary capacitor circuit is between described two connecting portions of corresponding data circuit.
2. LCD according to claim 1 is characterized in that, also comprises a light and covers array, be located on described second substrate, and the extension of described auxiliary capacitor circuit is covered array by described light and covers.
3. LCD according to claim 1 and 2 is characterized in that the extension of described auxiliary capacitor circuit is adjacent to the second portion of described data circuit.
4. LCD according to claim 1 and 2 is characterized in that, one of two connecting portions of described data circuit are positioned at corresponding trace wiring top and as the one source pole of described thin film transistor (TFT).
5. LCD according to claim 4 is characterized in that, another connecting portion of described data circuit is in the centre of two adjacent trace wirings and be parallel to this trace wiring, and across two adjacent pixel regions.
6. LCD according to claim 4 is characterized in that, each pixel region also is provided with:
One auxiliary capacitance electrode;
One connection line is connected to described auxiliary capacitance electrode in order to the drain electrode with described thin film transistor (TFT); And
One contact hole in order to electrically connect described auxiliary capacitance electrode and described pixel electrode, makes described auxiliary capacitance electrode and described pixel electrode jointly as the opposite electrode of described auxiliary capacitor circuit,
Wherein, described connection line is all between two connecting portions of described data circuit.
7. LCD according to claim 5 is characterized in that, described second substrate also is provided with a light and covers array, and the source electrode of described thin film transistor (TFT) and drain electrode and described connection line are covered array by described light fully and cover.
8. LCD according to claim 2, it is characterized in that, the bearing of trend of the main body of described auxiliary capacitor circuit and the second portion of described data circuit intersect, and the bearing of trend of the extension of described auxiliary capacitor circuit is parallel to the second portion of described data circuit.
9. LCD according to claim 1 is characterized in that the first of described data circuit also comprises a projection, is located at described trace wiring top and as the one source pole of described thin film transistor (TFT).
10. LCD according to claim 9 is characterized in that, described second substrate also is provided with a light and covers array, and each described pixel region also is provided with:
One auxiliary capacitance electrode;
One connection line is connected to described auxiliary capacitance electrode in order to the drain electrode with described thin film transistor (TFT); And
One contact hole in order to electrically connect described auxiliary capacitance electrode and described pixel electrode, makes described auxiliary capacitance electrode and described pixel electrode jointly as the opposite electrode of described auxiliary capacitor circuit,
Wherein, in described pixel region, described light covers array and has at least a portion that an enlarged portion covers source electrode and the drain electrode and the described connection line of described thin film transistor (TFT).
11. LCD according to claim 9 is characterized in that, described second substrate also is provided with a light and covers array, and each described pixel region also is provided with:
One auxiliary capacitance electrode;
One connection line is connected to described auxiliary capacitance electrode in order to the drain electrode with described thin film transistor (TFT); And
One contact hole, in order to electrically connect described auxiliary capacitance electrode and described pixel electrode, make described auxiliary capacitance electrode and described pixel electrode its with as opposite electrode of described auxiliary capacitor circuit,
Wherein, described light covers the connection line that array covers the source electrode of described thin film transistor (TFT) and drain electrode fully and covers at least a portion.
12., it is characterized in that described connection line has at least between connecting portion and the trace wiring adjacent with this connecting portion of a part in two connecting portions of described data circuit according to claim 10 or 11 described LCD.
13. a thin film transistor base plate is characterized in that, has a plurality of pixel regions of arranged, described thin film transistor base plate comprises at least:
The multi-strip scanning circuit, described trace wiring is parallel to each other;
Many data circuits, described data circuit is parallel to each other and vertical with described trace wiring, described trace wiring and data circuit form the pixel region of a plurality of arranged, each pixel region is defined by two adjacent trace wirings and two adjacent data circuits, and wherein each data circuit is bent into a first, a second portion and is connected in two connecting portions between described first and the second portion between two adjacent trace wirings;
A plurality of pixel electrodes are located at described pixel region respectively, and the relative side part that the described first of each data circuit and second portion are respectively two adjacent pixel electrodes covers;
A plurality of thin film transistor (TFT)s are connected to described pixel electrode and are located at the multi-strip scanning line and the data circuit infall; And
A plurality of auxiliary capacitor circuits, it respectively has the extension that a main body and that is parallel to described trace wiring is extended outward by described main body,
Wherein, in each pixel region, the extending part of described auxiliary capacitor circuit is between described two connecting portions of corresponding data circuit.
14. thin film transistor base plate according to claim 13 is characterized in that, the extension of described auxiliary capacitor circuit is adjacent to the second portion of described data circuit.
15., it is characterized in that one of two connecting portions of described data circuit are positioned at corresponding trace wiring top and as the one source pole of described thin film transistor (TFT) according to claim 13 or 14 described thin film transistor base plates.
16. thin film transistor base plate according to claim 15 is characterized in that, another connecting portion of described data circuit is in the centre of two adjacent trace wirings and be parallel to described trace wiring, and across two adjacent pixel regions.
17. thin film transistor base plate according to claim 15 is characterized in that, each pixel region also is provided with:
One auxiliary capacitance electrode;
One connection line is connected to described auxiliary capacitance electrode in order to the drain electrode with described thin film transistor (TFT); And
One contact hole in order to electrically connect described auxiliary capacitance electrode and described pixel electrode, makes described auxiliary capacitance electrode and described pixel electrode jointly as the opposite electrode of described auxiliary capacitor circuit,
Wherein, described connection line is all between two connecting portions of described data circuit.
18. thin film transistor base plate according to claim 13, it is characterized in that, the bearing of trend of the main body of described auxiliary capacitor circuit and the second portion of described data circuit intersect, and the bearing of trend of the extension of described auxiliary capacitor circuit is parallel to the second portion of described data circuit.
19. according to claim 13 or 14 described thin film transistor base plates, it is characterized in that the first of described data circuit also comprises a projection, be located at described trace wiring top and as the one source pole of described thin film transistor (TFT).
20. thin film transistor base plate according to claim 19 is characterized in that, described pixel region also is provided with:
One auxiliary capacitance electrode;
One connection line is connected to described auxiliary capacitance electrode in order to the drain electrode with described thin film transistor (TFT); And
One contact hole in order to electrically connect described auxiliary capacitance electrode and described pixel electrode, makes described auxiliary capacitance electrode and described pixel electrode jointly as the opposite electrode of described auxiliary capacitor circuit,
Wherein, described connection line has at least between connecting portion and the trace wiring adjacent with this connecting portion of a part in two connecting portions of described data circuit.
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| CNB2006101363421A CN100456090C (en) | 2006-10-16 | 2006-10-16 | Liquid crystal display device and thin film transistor base plate thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006101363421A CN100456090C (en) | 2006-10-16 | 2006-10-16 | Liquid crystal display device and thin film transistor base plate thereof |
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| CN100456090C true CN100456090C (en) | 2009-01-28 |
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| CN102004361B (en) * | 2010-10-18 | 2013-03-06 | 深超光电（深圳）有限公司 | Pixel array |
| CN107272292B (en) | 2017-08-18 | 2020-02-18 | 京东方科技集团股份有限公司 | Display substrate, display panel and display device |
| CN109521586A (en) * | 2018-12-10 | 2019-03-26 | 厦门天马微电子有限公司 | Display panel and display device |
| CN112782896A (en) | 2021-01-29 | 2021-05-11 | 合肥京东方光电科技有限公司 | Array substrate and reflective display panel |
| CN114823726A (en) * | 2022-04-14 | 2022-07-29 | 武汉华星光电技术有限公司 | Display panel and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000241830A (en) * | 1999-02-17 | 2000-09-08 | Sanyo Electric Co Ltd | Liquid crystal display device |
| JP2001281696A (en) * | 2000-03-30 | 2001-10-10 | Sharp Corp | Active matrix type liquid crystal display device |
| CN1542531A (en) * | 2003-03-24 | 2004-11-03 | ���ǵ�����ʽ���� | Liquid crystal display and thin film transistor array panel therefor |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000241830A (en) * | 1999-02-17 | 2000-09-08 | Sanyo Electric Co Ltd | Liquid crystal display device |
| JP2001281696A (en) * | 2000-03-30 | 2001-10-10 | Sharp Corp | Active matrix type liquid crystal display device |
| CN1542531A (en) * | 2003-03-24 | 2004-11-03 | ���ǵ�����ʽ���� | Liquid crystal display and thin film transistor array panel therefor |
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