CN100524779C - Thin film transistor module base board and its making method - Google Patents
Thin film transistor module base board and its making method Download PDFInfo
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- CN100524779C CN100524779C CNB2006100841337A CN200610084133A CN100524779C CN 100524779 C CN100524779 C CN 100524779C CN B2006100841337 A CNB2006100841337 A CN B2006100841337A CN 200610084133 A CN200610084133 A CN 200610084133A CN 100524779 C CN100524779 C CN 100524779C
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Abstract
The invention discloses a several groups of base of film transistor and making method, which comprises the following parts: transparent base, multiple pixel units and masking structure with multiple masking layers, wherein the transparent base consists of display area and non-display area; the pixel unit is set in the display area; each pixel unit consists of film transistor and pixel electrode; the masking layer is set in the non-display area with multiple openings; the opening of two adjacent masking layers crosses.
Description
Technical field
The present invention is relevant for a kind of liquid crystal display assembly, particularly relevant for a kind of plurality of groups of substrates of thin-film transistor and manufacture method thereof.
Background technology
Plurality of groups of substrates of thin-film transistor processing procedure, colored filter substrate processing procedure can be roughly divided in the manufacturing of general LCD, liquid crystal injects and the liquid crystal display device module assembling.The light that sends for fear of backlight of LCD scatters to the viewing area from the non-display area of display panels, therefore the non-display area of being everlasting forms a light-shielding structure, this light-shielding structure is around the periphery setting of viewing area, in order to prevent causing the demonstration image quality of viewing area to reduce because of the light leak of backlight.
Light-shielding structure can be arranged at plurality of groups of substrates of thin-film transistor, also can be arranged at colored filter substrate, in a prior art, this light-shielding structure is to be formed at colored filter substrate simultaneously with black matrix" (Black Matrix), the material of this black matrix" uses the chromium metal usually, yet the chromium metal causes environmental pollution easily.Therefore, in another prior art, be to replace the chromium metal with black resin, though the method can be improved environmental pollution problems, therefore the light-proofness of black resin may produce the problem that display quality reduces but not as the chromium metal.
In another prior art, be that the non-display area at plurality of groups of substrates of thin-film transistor forms a light-shielding structure.With reference to Fig. 1, Fig. 1 illustrates the schematic top plan view of an existing plurality of groups of substrates of thin-film transistor, light-shielding structure 114 is a sheet of metal levels, be positioned at the non-display area 112 of plurality of groups of substrates of thin-film transistor 110, though this light-shielding structure 114 has good shaded effect, but cause exfoliate defective easily.The light-shielding structure of another existing plurality of groups of substrates of thin-film transistor is to form a plurality of holes on a sheet metal level, and these holes produce exfoliate situation in order to avoid light-shielding structure, yet these holes but cause the phenomenon of light leak easily.
How improving the design of light-shielding structure, to take into account environmental protection, structure tack and shaded effect, is the problem that present urgent need overcomes.
Summary of the invention
Purpose of the present invention is providing a kind of plurality of groups of substrates of thin-film transistor exactly, and this plurality of groups of substrates of thin-film transistor has a light-shielding structure at non-display area, and this light-shielding structure can improve prior art and produce environmental pollution problems.
Another object of the present invention is providing a kind of plurality of groups of substrates of thin-film transistor exactly, and this plurality of groups of substrates of thin-film transistor has a light-shielding structure at non-display area, and this light-shielding structure has preferable shaded effect and structure tack.
Another purpose of the present invention is providing a kind of plurality of groups of substrates of thin-film transistor exactly, and this plurality of groups of substrates of thin-film transistor has a light-shielding structure at non-display area, and this light-shielding structure can improve the stability of common electric voltage.
According to above-described purpose, a kind of plurality of groups of substrates of thin-film transistor is proposed, have a viewing area and a non-display area and include the light-shielding structure that a transparency carrier, a plurality of pixel cell and have a plurality of light shield layers.These pixel cells are arranged at this viewing area, and each pixel cell includes a thin-film transistor and a pixel electrode.Described light-shielding structure is arranged at this non-display area, and wherein, these light shield layers have a plurality of holes, and the hole of two adjacent light shield layers is crisscross arranged.
According to the described plurality of groups of substrates of thin-film transistor of a preferred embodiment of the present invention, wherein, described light-shielding structure includes one first light shield layer and one second light shield layer, and the hole of this first light shield layer and this second light shield layer is crisscross arranged.
According to the described plurality of groups of substrates of thin-film transistor of a preferred embodiment of the present invention, wherein, described thin-film transistor has a gate layer, and this gate layer and this first light shield layer are positioned at same rete.
According to the described plurality of groups of substrates of thin-film transistor of a preferred embodiment of the present invention, wherein, described thin-film transistor has one source pole and drain layer, and this source electrode and drain layer and this second light shield layer are positioned at same rete.
According to the described plurality of groups of substrates of thin-film transistor of a preferred embodiment of the present invention, wherein, described non-display area has an articulamentum, and this articulamentum and this pixel electrode are positioned at same rete.
According to the described plurality of groups of substrates of thin-film transistor of a preferred embodiment of the present invention, wherein, described articulamentum electrically connects this first light shield layer and this second light shield layer.
According to above-described purpose, a kind of manufacture method of plurality of groups of substrates of thin-film transistor is also proposed, its step includes: at first, form a gate layer on a viewing area of a transparency carrier, and formation has one first light shield layer of a plurality of holes in a non-display area of transparency carrier simultaneously.Then, form an insulating barrier and cover described gate layer and described first light shield layer.Then, form a channel layer on described gate layer and described insulating barrier.Then, form one source pole and drain layer on described channel layer, and one second light shield layer that formation simultaneously has a plurality of holes is in described non-display area, wherein, the hole of the hole of described first light shield layer and described second light shield layer is crisscross arranged.Then, form a dielectric layer in described viewing area and non-display area.Then, form a plurality of viewing areas and be opened on described dielectric layer, to expose described source electrode and drain layer.Then, form a pixel electrode layer on described dielectric layer.
According to the manufacture method of the described plurality of groups of substrates of thin-film transistor of a preferred embodiment of the present invention, wherein, described insulating barrier is identical with the material of dielectric layer.
Manufacture method according to the described plurality of groups of substrates of thin-film transistor of a preferred embodiment of the present invention, wherein, the step that forms the viewing area opening also comprises a plurality of non-display area openings of formation, and these non-display area openings expose described first light shield layer and described second light shield layer.
Manufacture method according to the described plurality of groups of substrates of thin-film transistor of a preferred embodiment of the present invention, wherein, the step that forms pixel electrode layer also comprises formation one articulamentum, and this articulamentum electrically connects described first light shield layer and described second light shield layer by the non-display area opening.
The non-display area of plurality of groups of substrates of thin-film transistor of the present invention has one first light shield layer and one second light shield layer, and this first light shield layer and second light shield layer have a plurality of holes respectively, therefore can avoid light shield layer to produce exfoliate situation.
Plurality of groups of substrates of thin-film transistor of the present invention because the hole of second light shield layer and the hole of first light shield layer are crisscross arranged, therefore is difficult for producing light leakage phenomena.
Plurality of groups of substrates of thin-film transistor of the present invention, because described articulamentum electrically connects first light shield layer and second light shield layer, the current potential that makes first light shield layer and second light shield layer all is a common electric voltage, therefore can increase the stability of common electric voltage, and then the quality of promoting display panels.
Description of drawings
For above and other objects of the present invention, feature, advantage and embodiment can be become apparent, being described in detail as follows of accompanying drawing:
Fig. 1 illustrates the schematic top plan view of an existing plurality of groups of substrates of thin-film transistor.
Fig. 2 illustrates the schematic top plan view according to the plurality of groups of substrates of thin-film transistor of a preferred embodiment of the present invention.
Fig. 2 A illustrates the regional area enlarged drawing of Fig. 2.
Fig. 2 B illustrates the A-A ' profile of Fig. 2.
Fig. 2 C illustrates the B-B ' profile of Fig. 2.
Fig. 3 illustrates the schematic top plan view according to the display panels of a preferred embodiment of the present invention.
Fig. 3 A illustrates the C-C ' profile of Fig. 3.
Description of reference numerals:
110: plurality of groups of substrates of thin-film transistor 224a: articulamentum
112: non-display area 224b: pixel electrode layer
114: light-shielding structure 226a: the non-display area opening
200: plurality of groups of substrates of thin-film transistor 226b: the viewing area opening
201: regional area 230: viewing area
203: hole 232: non-display area
210: transparency carrier 234: light-shielding structure
212a: first light shield layer 236: pixel cell
212b: gate layer 238: thin-film transistor
213: hole 242: scan line
214: insulating barrier 244: data wire
215: light 300: display panels
216: channel layer 310: colored filter substrate
218: 312: the three light shield layers of ohmic contact layer
220a: second light shield layer 320: liquid crystal layer
220b: source electrode and drain layer 330: viewing area
221: hole 332: non-display area
222: dielectric layer 334: shading region
224: pixel electrode
Embodiment
Fig. 2 illustrates the schematic top plan view according to the plurality of groups of substrates of thin-film transistor of a preferred embodiment of the present invention.Please refer to Fig. 2, this plurality of groups of substrates of thin-film transistor 200 has a viewing area 230 and a non-display area 232, and include a transparency carrier 210, a plurality of pixel cell 236 and a light-shielding structure 234, wherein pixel cell 236 is arranged at viewing area 230, and includes a thin-film transistor 238 and a pixel electrode 224.Light-shielding structure 234 is positioned at the non-display area 232 of plurality of groups of substrates of thin-film transistor 200.
More specifically, transparency carrier 210 for example is a glass substrate, and viewing area 230 for example is a rectangular area that is positioned at glass substrate central authorities, and non-display area 232 for example is a blocked areas around viewing area 230.Be provided with many data wires that are parallel to each other 244 and scan line 242 in the viewing area 230, data wire 244 is vertical with scan line 242, and these data wires and scan line define a plurality of pixel cells 236.In each pixel cell 236, can pass through control TFT 238, make data wire 244 transmission one signal voltage to pixel electrode 224.
Fig. 2 A illustrates regional area 201 enlarged drawings of Fig. 2.Please be simultaneously with reference to Fig. 2 and Fig. 2 A, light-shielding structure 234 has a plurality of holes, and for example regional area 201 comprises a plurality of holes 203, and these holes 203 produce exfoliate situation in order to avoid light-shielding structure.
Fig. 2 B illustrates the A-A ' profile of Fig. 2.Please be simultaneously with reference to Fig. 2 and Fig. 2 B, light-shielding structure 234 has the one first light shield layer 212a and the second light shield layer 220a, the first light shield layer 212a and the second light shield layer 220a have a plurality of holes 213,221 respectively, and these holes 213,221 produce exfoliate situation in order to avoid light shield layer 212a, 220a.It should be noted that, the hole that is positioned at the first light shield layer 212a and the second light shield layer 220a is crisscross arranged, so, the light 215 that can avoid backlight to send passes through the first light shield layer 212a and the second light shield layer 220a, and then improves the screening rotary light performance of light-shielding structure 234.
The making of light-shielding structure 234 can be integrated in same processing procedure with pixel cell 236, below will cooperate icon to describe.Fig. 2 C illustrates the B-B ' profile of Fig. 2.Simultaneously with reference to Fig. 2, Fig. 2 B and Fig. 2 C, the manufacture method of plurality of groups of substrates of thin-film transistor 200 for example is: at first, form a gate layer 212b on the viewing area 230 of transparency carrier 210, and formation has one first light shield layer 212a of a plurality of holes 213 in the non-display area 232 of transparency carrier 210 simultaneously.For example can adopt processing procedures such as deposition, little shadow, etching to form a patterned conductive layer on transparency carrier 210, this patterned conductive layer 230 comprises gate layer 212b in the viewing area, and comprise the first light shield layer 212a in non-display area 232, and the material of this patterned conductive layer for example is aluminium neodymium alloy (AlNd).Then, form an insulating barrier 214 and cover the gate layer 212b and the first light shield layer 212a, the material of this insulating barrier 214 for example is silicon nitride (SiNx).Then, form a channel layer 216 on gate layer 212b and insulating barrier 214, the material of this channel layer 216 for example is an amorphous silicon.
Form after the channel layer 216, then form one source pole and drain layer 220b on channel layer 216, and formation has one second light shield layer 220a of a plurality of holes 221 in non-display area 232 simultaneously.For example can adopt processing procedures such as deposition, little shadow, etching to form another patterned conductive layer, this patterned conductive layer in the viewing area 230 with non-display area 232 comprise source electrode and the drain layer 220b and the second light shield layer 220a respectively, and the material of this patterned conductive layer for example is aluminium, titanium, tungsten, molybdenum.In addition, for example also comprise an ohmic contact layer 218 between source electrode and drain layer 220b and the channel layer 216.It should be noted that the hole 221 of the second light shield layer 220a and the hole 213 of the first light shield layer 212a are crisscross arranged, therefore, will be blocked by the second light shield layer 220a by the light 215 of hole 213.In this preferred embodiment, the material of the first light shield layer 212a and the second light shield layer 220a for example all is the metal with high reflectance, therefore has preferable screening rotary light performance.
Continuation then, forms a dielectric layer 222 and covers insulating barrier 214, source electrode and the drain layer 220b and the second light shield layer 220a with reference to Fig. 2 B, and the material of dielectric layer 222 is for example identical with insulating barrier 214, is silicon nitride (SiNx).Then, form a plurality of viewing area opening 226b and a plurality of non-display area opening 226a in dielectric layer 222, wherein opening 226b in viewing area exposes source electrode and drain layer 220b, and non-display area opening 226a exposes the first light shield layer 212a and the second light shield layer 220a.
Then, form a pixel electrode layer 224b on dielectric layer 222, and form an articulamentum 224a simultaneously in non-display area 232.Pixel electrode layer 224b is by viewing area opening 226b and source electrode and drain layer 220b electric connection, and articulamentum 224a electrically connects the first light shield layer 212a and the second light shield layer 220a by non-display area opening 226a.In other words, pixel electrode layer 224b and articulamentum 224a are positioned at same rete, and this rete is a transparency conducting layer, and its material for example is indium tin oxide (ITO) or indium-zinc oxide (IZO).It should be noted that, because articulamentum 224a electrically connects the first light shield layer 212a and the second light shield layer 220a, the current potential that makes win the light shield layer 212a and the second light shield layer 220a all is a common electric voltage (Vcom), so, can reduce the signal resistance of common electric voltage, and then increase the stability of common electric voltage.
Fig. 3 illustrates the schematic top plan view according to the display panels of a preferred embodiment of the present invention, and Fig. 3 A illustrates the C-C ' profile of Fig. 3.Please be simultaneously with reference to Fig. 3 and Fig. 3 A, display panels 300 has a viewing area 330 and a non-display area 332.This display panels 300 includes a colored filter substrate 310, a plurality of groups of substrates of thin-film transistor 200 and a liquid crystal layer 320, and wherein liquid crystal layer 320 is arranged between colored filter substrate 310 and the plurality of groups of substrates of thin-film transistor 200.One shading region 334 is arranged in the non-display area 332, plurality of groups of substrates of thin-film transistor 200 has one first light shield layer 212a and one second light shield layer 220a in shading region 334, the first light shield layer 212a and the second light shield layer 220a have a plurality of holes 213,221 respectively, and the hole of the hole of the second light shield layer 220a and the first light shield layer 212a is crisscross arranged.Colored filter substrate has one the 3rd light shield layer 312 at shading region 334, and the material of this 3rd light shield layer 312 can be avoided adopting and contain the chromium material, for example adopts black resin, therefore can improve environmental pollution problems.Owing to have the first light shield layer 212a, the second light shield layer 220a and the 3rd light shield layer 312, compared to prior art, display panels of the present invention has preferable shaded effect.
Though the present invention with preferred embodiment openly as above; right its is not in order to limiting the present invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention; all can do various changes and modification, so protection scope of the present invention should be with being as the criterion that claims were defined.
Claims (10)
1. a plurality of groups of substrates of thin-film transistor has a viewing area and a non-display area, it is characterized in that described plurality of groups of substrates of thin-film transistor comprises:
One transparency carrier;
A plurality of pixel cells are arranged at described viewing area, and each pixel cell comprises a thin-film transistor and a pixel electrode; And
One light-shielding structure has a plurality of light shield layers that pile up mutually, is arranged at described non-display area, and each described light shield layer has a sheet structure and a plurality of hole, and these holes are arranged on this laminated structure, and the hole of the two adjacent light shield layers that pile up is crisscross arranged.
2. plurality of groups of substrates of thin-film transistor as claimed in claim 1 is characterized in that, described light-shielding structure comprises one first light shield layer and one second light shield layer, and the hole of this first light shield layer and second light shield layer is crisscross arranged.
3. plurality of groups of substrates of thin-film transistor as claimed in claim 2 is characterized in that described thin-film transistor has a gate layer, and this gate layer and described first light shield layer are positioned at same rete.
4. plurality of groups of substrates of thin-film transistor as claimed in claim 2 is characterized in that, described thin-film transistor has one source pole and drain layer, and this source electrode and drain layer and described second light shield layer are positioned at same rete.
5. plurality of groups of substrates of thin-film transistor as claimed in claim 2 is characterized in that described non-display area has an articulamentum, and this articulamentum and described pixel electrode are positioned at same rete.
6. plurality of groups of substrates of thin-film transistor as claimed in claim 5 is characterized in that, described articulamentum electrically connects described first light shield layer and described second light shield layer.
7. the manufacture method of a plurality of groups of substrates of thin-film transistor comprises:
Form the viewing area of a gate layer, and formation has one first light shield layer of a sheet structure and a plurality of holes in a non-display area of described transparency carrier simultaneously in a transparency carrier;
Form an insulating barrier and cover described gate layer and described first light shield layer;
Form a channel layer on described gate layer and described insulating barrier;
Form one source pole and drain layer on described channel layer, and formation has one second light shield layer of a sheet structure and a plurality of holes in described non-display area simultaneously;
Wherein, a plurality of holes on described first, second light shield layer all are arranged on the laminated structure of corresponding light shield layer, and described first, second light shield layer is adjacent and pile up mutually, and the hole of the hole of described second light shield layer and described first light shield layer is crisscross arranged;
Form a dielectric layer in described viewing area and described non-display area;
Form a plurality of viewing areas and be opened on described dielectric layer, these viewing area openings expose described source electrode and drain layer; And
Form a pixel electrode layer on described dielectric layer.
8. the manufacture method of plurality of groups of substrates of thin-film transistor as claimed in claim 7 is characterized in that, described insulating barrier is identical with the material of described dielectric layer.
9. the manufacture method of plurality of groups of substrates of thin-film transistor as claimed in claim 7, it is characterized in that, the step that forms described these viewing area openings also comprises a plurality of non-display area openings of formation, and these non-display area openings expose described first light shield layer and described second light shield layer.
10. the manufacture method of plurality of groups of substrates of thin-film transistor as claimed in claim 9, it is characterized in that, the step that forms described pixel electrode layer also comprises formation one articulamentum, and this articulamentum electrically connects described first light shield layer and described second light shield layer by these non-display area openings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100841337A CN100524779C (en) | 2006-05-25 | 2006-05-25 | Thin film transistor module base board and its making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100841337A CN100524779C (en) | 2006-05-25 | 2006-05-25 | Thin film transistor module base board and its making method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101079428A CN101079428A (en) | 2007-11-28 |
| CN100524779C true CN100524779C (en) | 2009-08-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2006100841337A Expired - Fee Related CN100524779C (en) | 2006-05-25 | 2006-05-25 | Thin film transistor module base board and its making method |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130136B (en) * | 2010-11-25 | 2013-04-10 | 华映视讯（吴江）有限公司 | Pixel structure and bigrid pixel structure |
| US20150301640A1 (en) * | 2012-12-26 | 2015-10-22 | Kyocera Corporation | Input device, display device, and electronic apparatus |
| CN107579005B (en) * | 2017-09-11 | 2020-03-17 | 京东方科技集团股份有限公司 | Thin film transistor, preparation method, array substrate and display device |
| CN108535925B (en) * | 2018-03-20 | 2021-04-02 | 厦门天马微电子有限公司 | Display panel and display device |
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2006
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